CN114855124A - Self-formed double-layer amorphous diffusion barrier layer and preparation method thereof - Google Patents
Self-formed double-layer amorphous diffusion barrier layer and preparation method thereof Download PDFInfo
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- CN114855124A CN114855124A CN202210512480.4A CN202210512480A CN114855124A CN 114855124 A CN114855124 A CN 114855124A CN 202210512480 A CN202210512480 A CN 202210512480A CN 114855124 A CN114855124 A CN 114855124A
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 35
- 230000004888 barrier function Effects 0.000 title claims abstract description 32
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 36
- 239000000956 alloy Substances 0.000 claims description 36
- 239000010408 film Substances 0.000 claims description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- 238000000151 deposition Methods 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 229910000927 Ge alloy Inorganic materials 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 235000012239 silicon dioxide Nutrition 0.000 claims description 14
- 239000000377 silicon dioxide Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 13
- 238000004544 sputter deposition Methods 0.000 claims description 12
- 238000000137 annealing Methods 0.000 claims description 9
- 229910052681 coesite Inorganic materials 0.000 claims description 9
- 229910052906 cristobalite Inorganic materials 0.000 claims description 9
- 229910052682 stishovite Inorganic materials 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 9
- 229910052905 tridymite Inorganic materials 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000005477 sputtering target Methods 0.000 claims description 6
- 238000001556 precipitation Methods 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims description 2
- 230000003115 biocidal effect Effects 0.000 abstract 1
- 239000010949 copper Substances 0.000 description 92
- 238000000034 method Methods 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- 230000000844 anti-bacterial effect Effects 0.000 description 3
- 229910017821 Cu—Ge Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000008520 organization Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/04—Alloys based on a platinum group metal
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
- C23C14/025—Metallic sublayers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a self-forming double-layer amorphous diffusion impervious layer suitable for the surface of a medical apparatus and a preparation method thereof. The self-formed double-layer barrier layer is continuous, uniform and compact, the thickness can be controlled within a few nanometers, and the self-formed double-layer barrier layer has low resistance and high thermal stability and meets the performance requirements of medical instrument surface antibiosis on the Cu interconnection diffusion barrier layer.
Description
Technical Field
The invention relates to a diffusion barrier layer material of an antibacterial Cu interconnection system on the surface of a medical instrument, in particular to a Ru-RuO/Ru-Ge-Cu self-forming double-layer amorphous diffusion barrier layer suitable for the surface of the medical instrument and a preparation method thereof.
Background
With the development of the antibacterial requirement of medical instruments, the Cu with high antibacterial rate replaces Al to become an interconnection material, however, the Cu interconnection line has the problems of easy diffusion pollution, easy oxidation at low temperature and in air, poor adhesion with SiO2 and most dielectric materials and the like. A proper diffusion barrier layer (diffusion barrier layer) is required to be added between Cu, Si, SiO2 and the dielectric layer to prevent the oxidation of a Cu film and prevent Cu atoms from diffusing, and the bonding strength of Cu and the dielectric layer is increased, so that the interface characteristic of Cu interconnection is improved, the electromigration is reduced, and the reliability is improved.
As Cu interconnect feature sizes are reduced to tens of nanometers, the thickness of the barrier layer is correspondingly only a few tens of nanometers or even a few nanometers. This places more stringent requirements on barrier layer fabrication process and performance. The performance requirements are as follows: the barrier layer has high temperature stability; good conductivity, reduced additional voltage drop; as thin as possible to ensure as large an effective cross-sectional dimension of the Cu interconnect as possible; good step coverage, low stress, compactness and uniformity. Such ultra-thin, uniform, high performance diffusion barriers are difficult to prepare using conventional methods.
In view of the above drawbacks, it is desirable to provide a diffusion barrier layer and a method for preparing the same to solve the above technical problems.
Disclosure of Invention
The invention aims to solve the technical problem of providing a self-forming double-layer amorphous diffusion barrier layer suitable for the surface of a medical instrument and a preparation method thereof, and aims to solve the problems that a Cu interconnection line is easy to oxidize at low temperature and in air, the adhesion between the Cu interconnection line and SiO2 and most dielectric materials is poor, and the like.
Therefore, the invention adopts the following technical scheme:
a self-forming bilayer amorphous diffusion barrier includes a substrate, a Cu (Ru) alloy thin film deposited on the substrate as a seed layer and a precipitation layer, an amorphous Ru-Ge alloy thin film implanted between the substrate and the Cu (Ru) alloy thin film as a pre-barrier and depletion layer, and a pure Cu layer deposited on the Cu (Ru) alloy thin film as an interconnect layer.
The substrate is a silicon wafer or a silicon wafer with a silicon dioxide oxide layer;
the thickness of the diffusion barrier layer is 5-15 nm;
the content of Ge in the Ru-Ge alloy film is 30% -60%;
the preparation method of the self-formed double-layer amorphous diffusion impervious layer comprises the following steps: in Ar gas atmosphere, performing magnetron co-sputtering by taking a Ru sheet, a Ge sheet and a Cu sheet as sputtering targets, respectively and sequentially depositing a Ru-Ge alloy film and a Cu (Ru) alloy film on the surface of a silicon wafer or the silicon wafer with a silicon dioxide oxide layer, then depositing a pure Cu film on the surface of the Cu (Ru) alloy film to form a Cu/Cu (Ru)/Ru-Ge/Si stack system or a Cu/Cu (Ru)/Ru-Ge/SiO2/Si stack system, and finally annealing the stack system.
Deposition conditions are as follows: the total sputtering pressure is 0.15Pa, and the power ratio of the Ru target to the Ge target is 1-1/3 when the Ru-Ge alloy is codeposited; when the Cu (Ru) alloy film is co-deposited, the power of the Cu target and the power of the Ru target are respectively 150W and 30W, and the power of pure Cu is 150W.
Conditions of annealing treatment: and (3) preserving the heat for 2.5-3 hours at 200-250 ℃ under the protection of vacuum or mixed atmosphere of N2/H2. Compared with the prior art, the self-formed double-layer amorphous diffusion impervious layer and the preparation method thereof have the advantages that: 1) implanting an amorphous RuGe layer as an intermediate layer, and forming a Cu-Ge compound with low resistivity by combining with diffused Cu atoms so as to form a Ru-Ge-Cu ternary amorphous layer with good conductivity; 2) providing Ru element for the seed layer and the precipitated metal source by adopting Cu (Ru) alloy; 3) the amorphous RuGe layer can combine with diffused Cu atoms to further promote the precipitation of Ru atoms in the Cu (Ru) alloy, so that the Ru-RuO-rich layer can be formed more easily; 4) annealing at lower temperatures can be achieved to self-form a bilayer amorphous barrier layer only a few nanometers thick.
Detailed Description
The self-formed double-layer amorphous diffusion barrier layer and the preparation method thereof of the present invention are described in detail below:
the self-formed double-layer amorphous diffusion impervious layer comprises a substrate, a Cu (Ru) alloy thin film which is deposited on the substrate and used as a seed layer and a precipitation layer, an amorphous Ru-Ge alloy thin film which is implanted between the substrate and the Cu (Ru) alloy thin film and used as a pre-blocking layer and a depletion layer, and a pure Cu layer which is plated on the Cu (Ru) alloy thin film and used as an interconnection layer. The substrate is a silicon wafer or a silicon wafer with a silicon dioxide oxide layer. The thickness of the diffusion impervious layer formed after annealing is 6-12 nm, the thickness of the Ru-Ge alloy film is 8-12 nm, the thickness of the Cu (Ru) alloy film is 15-25 nm, and the thickness of the pure copper film is 150-250 nm.
Example 1
In Ar gas atmosphere, performing magnetron co-sputtering by taking a Ru sheet, a Ge sheet and a Cu sheet with the diameter multiplied by the thickness of phi 50 multiplied by 3mm as sputtering targets, depositing a Ru-Ge alloy film with the thickness of 15nm and a Cu (Ru) alloy film with the thickness of 30nm on the surface of a silicon wafer Si in sequence, and finally depositing a pure Cu film with the thickness of 300nm on the surface of the Cu (Ru) alloy film to form a Cu/Cu (Ru)/Ru-Ge/Si stack system. The total flow of the sputtering gas is 30sccm, the sputtering pressure is 0.2Pa, when the RuGex alloy is co-deposited, the power of the Ru target and the Ge target are respectively 50W and 100W, and the deposition time is 150 s; the Cu and Ru targets for co-deposition of Cu (Ru) alloys were 150W and 30W, respectively, and the power for depositing pure Cu was 150W. Then, the Cu/Cu (Ru)/RuGex/Si stack system is annealed for 1.5-2 h at 200-250 ℃ in a vacuum furnace.
The Ru-RuO/Ru-Ge-Cu double-layer amorphous diffusion impervious layer prepared by the embodiment has the advantages that the thickness can be controlled within 15nm, the Ru-RuO/Ru-Ge-Cu double-layer amorphous diffusion impervious layer is uniform, continuous and compact, the organization structure is amorphous, the thermal stability is high, the Ru-RuO/Ge-Cu double-layer amorphous diffusion impervious layer can be kept at a high temperature of 650 ℃ without failure, and the highest temperature of a subsequent process of a chip manufacturing process is generally lower than 500 ℃.
Example 2
In Ar gas atmosphere, Ru sheets, Ge sheets and Cu sheets with the diameter multiplied by the thickness of phi 50 multiplied by 3mm are used as sputtering targets to carry out magnetron sputtering, Ru-Ge alloy films with the thickness of 10nm and Cu (Ru) alloy films with the thickness of 20nm are deposited on the surface of silicon wafer Si in sequence, and finally pure Cu films with the thickness of 200nm are deposited on the surface of the Cu (Ru) alloy films to form a Cu/Cu (Ru)/RuGex/Si stack system. The total flow of the sputtering gas is 30sccm, and the sputtering gas pressure is 0.2 Pa; when the RuGex alloy is co-deposited, the power of the Ru target and the Ge target are respectively 50W and 100W, and the deposition time is 100 s; the Cu and Ru targets for co-deposition of Cu (Ru) alloys were 150W and 30W, respectively, and the power for depositing pure Cu was 150W. Then, the Cu/Cu (Ru)/RuGex/Si stack system is annealed for 1.5-2 h at 200-250 ℃ in a vacuum furnace.
The Ru-RuO/Ru-Ge-Cu double-layer amorphous diffusion impervious layer prepared by the embodiment has the advantages that the thickness can be controlled within 10nm, the Ru-RuO/Ru-Ge-Cu double-layer amorphous diffusion impervious layer is uniform, continuous and compact, the organization structure is amorphous, the thermal stability is high, the Ru-RuO/Ge-Cu double-layer amorphous diffusion impervious layer can be kept at the high temperature of 600 ℃ without failure, and the highest temperature of the subsequent process of a chip manufacturing procedure is generally lower than 500 ℃.
Example 3
In Ar gas atmosphere, Ru sheets, Ge sheets and Cu sheets with the diameter multiplied by the thickness of phi 50 multiplied by 3mm are used as sputtering targets to carry out magnetron sputtering, a SiO2 dielectric layer is firstly deposited on the surface of silicon wafer Si, then a Ru-Ge alloy film with the thickness of 10nm and a Cu (Ru) alloy film with the thickness of 20nm are sequentially deposited, and finally a pure Cu film with the thickness of 200nm is deposited on the surface of the Cu (Ru) alloy film to form a Cu/Cu (Ru)/RuGex/SiO2/Si stack system. The total flow of the sputtering gas is 30sccm, and the sputtering gas pressure is 0.2 Pa; when the RuGex alloy is co-deposited, the power of the Ru target and the Ge target are respectively 50W and 100W, and the deposition time is 100 s; the Cu and Ru targets for co-deposition of Cu (Ru) alloys were 150W and 30W, respectively, and the power for depositing pure Cu was 150W. And annealing for 1.5-2 h at 200-250 ℃ in a high vacuum environment to form a double Ru-RuO/Ru-Ge-Cu amorphous diffusion barrier layer. The barrier layer prepared by the method has the thickness controllable within 10nm, is uniform, continuous and compact, has an amorphous structure, has high thermal stability, can be kept at a high temperature of 600 ℃ without failure, and the highest temperature of the subsequent process of the chip manufacturing process is generally lower than 500 ℃.
Example 4
In Ar gas atmosphere, Ru sheets, Ge sheets and Cu sheets with the diameter multiplied by the thickness of phi 50 multiplied by 3mm are used as sputtering targets to carry out magnetron sputtering, a SiO2 dielectric layer is firstly deposited on the surface of silicon wafer Si, then a Ru-Ge alloy film with the thickness of 5nm and a Cu (Ru) alloy film with the thickness of 10nm are sequentially deposited, and finally a pure Cu film with the thickness of 200nm is deposited on the surface of the Cu (Ru) alloy film to form a Cu/Cu (Ru)/Ru-Ge/SiO2/Si stack system. The total flow of the sputtering gas is 30sccm, and the sputtering gas pressure is 0.2 Pa; when the RuGex alloy is co-deposited, the power of the Ru target and the Ge target are respectively 50W and 100W, and the deposition time is 60 s; the Cu and Ru targets for co-deposition of Cu (Ru) alloys were 150W and 30W, respectively, and the power for depositing pure Cu was 150W. And annealing for 1.5-2H at 200-250 ℃ under the protection of N2/H2 mixed atmosphere to form a double-layer Ru-RuO/Ru-Ge-Cu amorphous diffusion barrier layer. The self-forming barrier layer prepared by the method has the advantages of controllable thickness within 5nm, uniformity, continuity and compactness, amorphous tissue structure, high thermal stability, capability of keeping the temperature to 600 ℃ without failure, and the highest temperature of the subsequent process of the chip manufacturing process is generally lower than 500 ℃.
According to the invention, an amorphous RuGe layer is implanted between a substrate and a seed layer as an intermediate layer, and can be combined with diffused Cu atoms to form a Cu-Ge compound with low resistivity, so that a Ru-Ge-Cu ternary amorphous layer with good conductivity is formed; the Cu (Ru) alloy is used as a seed layer and provides Ru elements for a precipitated metal source, and the amorphous RuGe layer can be combined with diffused Cu atoms to further promote the precipitation of the Ru atoms in the Cu (Ru) alloy, so that the Ru-RuO-rich layer can be formed more easily by self, and the double-layer amorphous barrier layer with the thickness of only a few nanometers can be formed by self annealing at lower temperature.
The above description is only one embodiment of the present invention, and not all or only one embodiment, and any equivalent alterations to the technical solutions of the present invention, which are made by those skilled in the art through reading the present specification, are covered by the claims of the present invention.
Claims (7)
1. A self-forming double-layer amorphous diffusion barrier suitable for use on the surface of a medical device, comprising: comprises a substrate, a Cu (Ru) alloy film deposited on the substrate and used as a seed layer and a precipitation layer, an amorphous Ru-Ge alloy film implanted between the substrate and the Cu (Ru) alloy film and used as a pre-blocking and depletion layer, and a pure Cu layer deposited on the Cu (Ru) alloy film and used as an interconnection layer.
2. The self-forming bilayer amorphous diffusion barrier of claim 1, wherein: the substrate is a silicon wafer or a silicon wafer with a silicon dioxide oxide layer.
3. The self-forming bilayer amorphous diffusion barrier of claim 1, wherein: the thickness of the diffusion impervious layer is 5-15 nm.
4. The self-forming bilayer amorphous diffusion barrier of claim 1, wherein: the content of Ge in the Ru-Ge alloy film is 40% -70%.
5. A method of fabricating a self-forming bilayer amorphous diffusion barrier as claimed in any one of claims 1 to 3, wherein: in an Ar gas atmosphere, performing co-magnetron sputtering by taking a Ru sheet, a Ge sheet and a Cu sheet as sputtering targets, respectively and sequentially depositing a Ru-Ge alloy film and a Cu (Ru) alloy film on the surface of a silicon wafer or the silicon wafer with a silicon dioxide oxide layer, then depositing a pure Cu film on the surface of the Cu (Ru) alloy film to form a Cu/Cu (Ru)/Ru-Ge/Si stack system or a Cu/Cu (Ru)/Ru-Ge/SiO2/Si stack system, and finally performing annealing treatment on the stack system.
6. The self-forming bilayer amorphous diffusion barrier of claim 5 wherein:
the total sputtering pressure is 0.2 Pa; when the Ru-Ge alloy is codeposited, the power ratio of the Ru target to the Ge target is 1-1/2; co-deposition of Cu (Ru)
In the case of an alloy thin film, the power of the Cu target and the Ru target is 150W and 30W respectively; the power for depositing pure Cu is 150W.
7. The self-forming bilayer amorphous diffusion barrier of claim 5, wherein: the annealing treatment condition is that the temperature is kept for 1.5-2H at 200-250 ℃ under the protection of vacuum or mixed atmosphere of N2/H2.
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Application publication date: 20220805 |