CN114843169A - Plasma processing apparatus and processing method - Google Patents

Plasma processing apparatus and processing method Download PDF

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Publication number
CN114843169A
CN114843169A CN202210425870.8A CN202210425870A CN114843169A CN 114843169 A CN114843169 A CN 114843169A CN 202210425870 A CN202210425870 A CN 202210425870A CN 114843169 A CN114843169 A CN 114843169A
Authority
CN
China
Prior art keywords
stabilizing barrel
plasma processing
electrode plate
processing apparatus
barrel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202210425870.8A
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Chinese (zh)
Inventor
王磊
徐忠元
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Beijing Ziniu Yidong Technology Co ltd
Original Assignee
Beijing Ziniu Yidong Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Ziniu Yidong Technology Co ltd filed Critical Beijing Ziniu Yidong Technology Co ltd
Priority to CN202210425870.8A priority Critical patent/CN114843169A/en
Publication of CN114843169A publication Critical patent/CN114843169A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating

Abstract

The invention relates to the technical field of plasma, and particularly discloses plasma processing equipment and a plasma processing method, wherein the plasma processing equipment comprises the following steps: the inner pressure stabilizing barrel is provided with openings at two ends and is provided with a first air hole; the outer pressure stabilizing barrel is provided with second air holes, can rotate relative to the inner pressure stabilizing barrel and is used for adjusting the staggering or overlapping of the second air holes and the first air holes; the first electrode plate is arranged at an opening at the bottom end of the outer pressure stabilizing barrel; the inner voltage-stabilizing barrel, the first electrode plate and the second electrode plate surround to form a plasma reaction cavity. This application is through setting up outer steady voltage bucket in the steady voltage bucket outside, just outer steady voltage bucket for interior steady voltage bucket is rotatable, in order to adjust the second gas pocket with staggering or the coincidence of first gas pocket to realized that the atmospheric pressure in the plasma reaction chamber carries out the purpose that changes along with the relative position of second gas pocket and first gas pocket.

Description

Plasma processing apparatus and processing method
Technical Field
The invention relates to the technical field of plasma, and particularly discloses plasma processing equipment and a plasma processing method.
Background
At present, the plasma technology is widely applied to etching of surface substances and deposition of thin films. In the aspect of etching surface substances, plasma etching has the advantages of good etching rate and anisotropy, etching selectivity, process repeatability and the like; in the field of thin film Deposition, Plasma Enhanced Chemical Vapor Deposition (PECVD) is widely used in industry due to its advantages of low Deposition temperature, small influence on the substrate, high Deposition speed, and good film thickness and component uniformity. It is worth mentioning that one of the forming elements of the plasma is vacuum, and a stable and adjustable low pressure environment is usually required to adjust the shape of the plasma in a continuous process, but as shown in fig. 1, the pressure in the reaction chamber of the current plasma processing apparatus is constant and cannot be adjusted according to the process.
Disclosure of Invention
The present invention is directed to a plasma processing apparatus and a processing method, which are designed to solve at least one of the above problems.
To achieve the above object, one aspect of the present invention proposes a plasma processing apparatus comprising:
the inner pressure stabilizing barrel is provided with openings at two ends and is provided with a first air hole;
the outer pressure stabilizing barrel is provided with openings at two ends and sleeved outside the inner pressure stabilizing barrel, a second air hole is formed in the outer pressure stabilizing barrel, and the outer pressure stabilizing barrel can rotate relative to the inner pressure stabilizing barrel so as to adjust the opening degree of the second air hole and the first air hole;
the first electrode plate is arranged at the opening at the top end of the inner pressure stabilizing barrel, and an air inlet is formed in the first electrode plate;
the second electrode plate is arranged at the opening at the bottom end of the outer pressure stabilizing barrel;
the inner voltage-stabilizing barrel, the first electrode plate and the second electrode plate surround to form a plasma reaction cavity.
In addition, the above-described plasma processing apparatus of the present invention may also have the following additional technical features.
According to an embodiment of the present invention, further comprising:
and the gas nozzle is arranged on the gas inlet hole.
According to an embodiment of the present invention, 9 first air holes are opened along an axial direction of the inner surge tank, and 9 second air holes are opened along an axial direction of the outer surge tank.
According to an embodiment of the invention, the first air holes are circular holes.
According to one embodiment of the present invention, the second air hole is a sector hole having a circular arc side and a sharp corner side, and the sharp corner of the sharp corner side is oriented in the rotation direction of the outer surge tank.
According to one embodiment of the invention, the radius of the circle in which the fan-shaped holes are located is the same as the radius of the circular hole.
According to one embodiment of the invention, the first electrode plate is detachably connected with the inner voltage-stabilizing barrel.
According to one embodiment of the invention, the second electrode plate is detachably connected with the outer voltage-stabilizing barrel.
Another aspect of the present invention provides a processing method of a plasma processing apparatus, characterized by comprising the steps of:
loading a substrate into a plasma reaction chamber;
introducing a processing gas into the plasma reaction chamber from the gas inlet;
the outer pressure stabilizing barrel is controlled to rotate so as to adjust the relative position of the second air hole and the first air hole.
According to an embodiment of the present invention, the second air hole and the first air hole are in a staggered state, a half-overlapped state and a full-overlapped state in sequence.
Compared with the prior art, the invention has the following beneficial effects:
this application is through setting up outer steady voltage bucket in the steady voltage bucket outside, just outer steady voltage bucket for interior steady voltage bucket is rotatable, in order to adjust the second gas pocket with staggering or the coincidence of first gas pocket to realized that the atmospheric pressure in the plasma reaction chamber carries out the purpose that changes along with the relative position of second gas pocket and first gas pocket.
Drawings
In order to more clearly illustrate the embodiments or technical solutions of the present invention, the drawings used in the embodiments or technical solutions of the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is an exploded view of a plasma processing apparatus according to an embodiment of the present invention;
FIG. 2 is a front view of FIG. 1;
FIG. 3 is a view showing the second air hole completely staggered with respect to the first air hole;
FIG. 4 is a view showing a state where the second air hole is half-overlapped with the first air hole;
fig. 5 is a diagram showing a state where the second air hole and the first air hole are completely overlapped.
Reference numerals:
the plasma processing device comprises a plasma processing device 100, an inner pressure stabilizing barrel 10, a first air hole 101, an outer pressure stabilizing barrel 11, a second air hole 110, an arc side 110a, a sharp corner side 110b, a first electrode plate 12, a second electrode plate 13 and a gas nozzle 14.
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that all the directional indicators (such as up, down, left, right, front, and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the movement situation, etc. in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indicator is changed accordingly.
In addition, the descriptions related to "first", "second", etc. in the present invention are only for descriptive purposes and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "connected," "secured," and the like are to be construed broadly, and for example, "secured" may be a fixed connection, a removable connection, or an integral part; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In addition, the technical solutions in the embodiments of the present invention may be combined with each other, but it must be based on the realization of the technical solutions by those skilled in the art, and when the technical solutions are contradictory to each other or cannot be realized, such a combination of the technical solutions should not be considered to exist, and is not within the protection scope of the present invention.
A plasma processing apparatus 100 in some embodiments of the invention is described below with reference to fig. 1-5.
As shown in fig. 1 to 5, an embodiment of the present invention provides a plasma processing apparatus 100 including:
the device comprises an inner pressure stabilizing barrel 10, an outer pressure stabilizing barrel 11, a first electrode plate 12, a second electrode plate 13 and a gas nozzle 14, wherein openings are formed at two ends of the inner pressure stabilizing barrel 10, and three layers of nine first gas holes 101 are formed in the inner pressure stabilizing barrel 10; the outer pressure stabilizing barrel 11 is provided with openings at two ends and sleeved outside the inner pressure stabilizing barrel 10, the outer pressure stabilizing barrel 11 is provided with the second air holes 110 which are distributed in the same quantity, and the outer pressure stabilizing barrel 11 can rotate relative to the inner pressure stabilizing barrel 10 so as to adjust the staggering or overlapping degree of the second air holes 110 and the first air holes 101; the first electrode plate 12 is arranged at the opening at the top end of the inner pressure stabilizing barrel 10, the first electrode plate 12 is provided with an air inlet, the gas nozzle 14 is arranged on the air inlet, and the second electrode plate 13 is arranged at the opening at the bottom end of the outer pressure stabilizing barrel 11; the inner voltage-stabilizing barrel 10, the first electrode plate 12 and the second electrode plate 13 form a plasma reaction chamber in an enclosing manner.
With continued reference to fig. 1, 9 first air holes 101 are opened along the axial direction of the inner surge tank 10, and 9 second air holes 110 are opened along the axial direction of the outer surge tank 11. Specifically, 9 first air holes 101 and 9 second air holes 110 are arranged at intervals. It should be noted that the first air hole 101 may be disposed along the circumferential direction of the inner surge tank 10, and the second air hole 110 may be disposed along the circumferential direction of the outer surge tank 11.
Further, with continued reference to fig. 2-5, the first air hole 101 may be a circular hole, and the second air hole 110 may be a fan-shaped hole, the fan-shaped hole having a circular side 110a and a sharp side 110b, the sharp angle of the sharp side 110b facing in the rotation direction of the outer tub 11, and the radius of the circle where the fan-shaped hole is located is the same as the radius of the circular hole. Specifically, when the outer pressure-stabilizing barrel 11 rotates to completely stagger the second air hole 110 and the first air hole 101, the outer pressure-stabilizing barrel is in a closed state, the gas flux at this time is minimum, in this state, the pressure in the plasma reaction chamber is maximum, when the outer pressure-stabilizing barrel 11 rotates to partially stagger the second air hole 110 and the first air hole 101, the outer pressure-stabilizing barrel is in a half-open state, the gas flux at this time is medium, in this state, the pressure in the plasma reaction chamber is centered, when the outer pressure-stabilizing barrel 11 rotates to completely stagger the second air hole 110 and the first air hole 101, the outer pressure-stabilizing barrel is in an open state, the gas flux at this time is maximum, and in this state, the pressure in the plasma reaction chamber is minimum.
It should be noted that the outer surge tank 11 may be suspended outside the inner surge tank 10, and the second electrode plate 13 is detachably connected to the outer surge tank 11. Specifically, the second electrode plate 13 is detachably connected to the external voltage stabilization barrel 11, so that the external voltage stabilization barrel 11 can be conveniently detached and maintained.
In addition, the first electrode plate 12 is detachably connected to the inner stabilizing barrel 10. Specifically, the first electrode plate 12 is detachably connected to the inner barrel 10, so that the outer barrel 11 can be conveniently detached and maintained.
Compared with the prior art, this application sets up outer steady voltage bucket through including steady voltage bucket outside, just outer steady voltage bucket for interior steady voltage bucket is rotatable, in order to adjust the second gas pocket with staggering or coincidence of first gas pocket has thereby realized that the atmospheric pressure in the plasma reaction chamber carries out the purpose that changes along with the relative position of second gas pocket and first gas pocket.
Another embodiment of the present invention is also directed to a processing method using the above plasma processing apparatus, comprising the steps of:
loading a substrate into a plasma reaction chamber;
introducing a processing gas into the plasma reaction chamber from the gas inlet;
the rotation of the outer pressure stabilizing barrel is controlled to adjust the relative position of the second air hole and the first air hole.
Specifically, when the outer pressure stabilizing barrel is controlled to rotate, the second air hole and the first air hole are in a staggered state, a half-overlapped state and a full-overlapped state in sequence, so that air pressure adjustment in the plasma reaction cavity is realized.
Specifically, when the sharp-angled side of the second air hole gradually enters the opening area, the pressure in the plasma reaction cavity slowly and continuously decreases. When the arc side of the second air hole gradually leaves the opening area, the pressure in the plasma reaction cavity slowly rises.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.

Claims (10)

1. A plasma processing apparatus, comprising:
the inner pressure stabilizing barrel is provided with openings at two ends and is provided with a first air hole;
the outer pressure stabilizing barrel is provided with a second air hole, can rotate relative to the inner pressure stabilizing barrel and is used for adjusting the staggering or coincidence of the second air hole and the first air hole;
the first electrode plate is arranged at the opening at the top end of the inner pressure stabilizing barrel, and an air inlet is formed in the first electrode plate;
the second electrode plate is arranged at the opening at the bottom end of the outer pressure stabilizing barrel;
the inner voltage-stabilizing barrel, the first electrode plate and the second electrode plate surround to form a plasma reaction cavity.
2. The plasma processing apparatus of claim 1, further comprising:
and the gas nozzle is arranged on the gas inlet hole.
3. The plasma processing apparatus according to claim 1, wherein a plurality of first air holes are formed along the axial direction of the inner pressure-stabilizing barrel, the specific number of the first air holes being adjustable according to the height of the pressure-stabilizing barrel and the size of the air holes, and a plurality of second air holes are formed along the axial direction of the outer pressure-stabilizing barrel, the number of the second air holes being consistent with the number of the first air holes.
4. The plasma processing apparatus of claim 3, wherein the first gas hole is a circular hole.
5. The plasma processing apparatus of claim 4, wherein the second gas vent is a fan-shaped hole having a circular arc side and a sharp corner side, the sharp corner of the sharp corner side facing in a direction of rotation of the outer surge bucket.
6. The plasma processing apparatus of claim 5, wherein the radius of the circle in which the scallops are located is the same as the radius of the circular hole.
7. The plasma processing apparatus of claim 1, wherein the first electrode plate is removably connected to the inner plenum barrel.
8. The plasma processing apparatus of claim 1, wherein the second electrode plate is removably connected to the outer surge tank.
9. A processing method using the plasma processing apparatus according to any one of claims 1 to 8, characterized by comprising the steps of:
loading a substrate into a plasma reaction chamber;
introducing a processing gas into the plasma reaction chamber from the gas inlet;
the outer pressure stabilizing barrel is controlled to rotate so as to adjust the relative position of the second air hole and the first air hole.
10. The process of claim 9, wherein the second gas holes are in a staggered state, a half-overlapped state, and a full-overlapped state in sequence with the first gas holes.
CN202210425870.8A 2022-04-22 2022-04-22 Plasma processing apparatus and processing method Pending CN114843169A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210425870.8A CN114843169A (en) 2022-04-22 2022-04-22 Plasma processing apparatus and processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210425870.8A CN114843169A (en) 2022-04-22 2022-04-22 Plasma processing apparatus and processing method

Publications (1)

Publication Number Publication Date
CN114843169A true CN114843169A (en) 2022-08-02

Family

ID=82565684

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210425870.8A Pending CN114843169A (en) 2022-04-22 2022-04-22 Plasma processing apparatus and processing method

Country Status (1)

Country Link
CN (1) CN114843169A (en)

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