CN114826242A - Microwave power switch circuit, device and control method - Google Patents
Microwave power switch circuit, device and control method Download PDFInfo
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- CN114826242A CN114826242A CN202210278146.7A CN202210278146A CN114826242A CN 114826242 A CN114826242 A CN 114826242A CN 202210278146 A CN202210278146 A CN 202210278146A CN 114826242 A CN114826242 A CN 114826242A
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- H03—ELECTRONIC CIRCUITRY
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- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
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- H—ELECTRICITY
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Abstract
The invention provides a microwave power switch circuit, a microwave power switch device and a microwave power switch control method. The circuit comprises a radio frequency input port, a first matching element, a second matching element, at least one radio frequency output port and at least one switch module; the switch modules correspond to the radio frequency output ports one to one; the switch module comprises a first switch branch; the first switch branch comprises a first switch tube, a second switch tube and an absorption load; in the same first switch branch, a first switch tube is connected with an absorption load in series, and a second switch tube is connected with the absorption load in parallel; when the microwave power switch circuit works, the switching state of the first switching tube and the switching state of the second switching tube in the same switching module are opposite, so that the radio frequency output port and the radio frequency input port corresponding to the switching module are in a conducting state or an isolating state. The invention can reduce the insertion loss of the microwave power switch circuit and improve the isolation degree of the microwave power switch circuit.
Description
Technical Field
The invention relates to the technical field of microwaves, in particular to a microwave power switch circuit, a microwave power switch device and a microwave power switch control method.
Background
The microwave power switch is used as a key part of a transmitting-receiving front end, and the insertion loss and the isolation of the microwave power switch not only influence the efficiency of a transmitting channel, but also influence the noise coefficient of a receiving channel. The impedance of the isolation side of the reflective switch is completely mismatched and the input signal is almost totally reflected, which in some applications can cause malfunction or even damage to its back-end devices. The absorption switch is used for enabling the input signal to be absorbed by the load by loading the isolation end and enabling the port impedance to be matched. For the absorption switch, the conducting terminal and the isolating terminal need to satisfy the matching requirement at the same time, which undoubtedly increases the loss of the circuit and deteriorates the isolation compared to the reflection switch.
At present, an absorption type switch circuit which can reduce insertion loss and improve isolation is lacked.
Disclosure of Invention
The embodiment of the invention provides a microwave power switch circuit, a microwave power switch device and a microwave power switch control method, and aims to solve the problem that an absorption type switch circuit which can reduce insertion loss and improve isolation is absent at present.
In a first aspect, an embodiment of the present invention provides a microwave power switch circuit, including a radio frequency input port, a first matching element, a second matching element, at least one radio frequency output port, and at least one switch module; the switch modules correspond to the radio frequency output ports one to one;
the switch module comprises a first switch branch; the first end of the first switch branch is connected with the corresponding radio frequency output port through a first matching element, the first end of the first switch branch is also connected with the radio frequency input port through a second matching element, and the second end of the first switch branch is grounded;
the first switch branch comprises a first switch tube, a second switch tube and an absorption load;
in the same first switch branch, a first switch tube is connected with an absorption load in series, a second switch tube is connected with the absorption load in parallel, a first end of the first switch branch is connected with the first end of the absorption load after the first switch tube is connected with the absorption load in series, and a second end of the first switch branch is connected with a second end of the first switch branch after the first switch tube is connected with the absorption load in series;
when the microwave power switch circuit works, the switching state of the first switching tube and the switching state of the second switching tube in the same switching module are opposite, so that the radio frequency output port and the radio frequency input port corresponding to the switching module are in a conducting state or an isolating state.
In a possible implementation manner, if the number of the radio frequency output ports is greater than or equal to 2, when the microwave power switch circuit operates, the radio frequency output port and the radio frequency input port corresponding to one of the switch modules are in a conducting state, and the radio frequency output ports and the radio frequency input ports corresponding to the other switch modules are in an isolating state.
In a possible implementation manner, the switch module further includes N stages of second switch branches and N third matching elements, the second switch branches and the third matching elements are in one-to-one correspondence, and N is greater than or equal to 1;
the first end of the first-stage second switch branch circuit is connected with the first end of the first switch branch circuit through a corresponding third matching element, and the second end of the first-stage second switch branch circuit is grounded; the first end of the Nth-stage second switch branch is connected with the radio frequency input port through a second matching element;
the first end of the M-level second switch branch circuit is connected with the first end of the M-1-level second switch branch circuit through a corresponding third matching element, and the second end of the M-level second switch branch circuit is grounded; m is more than or equal to 2 and less than or equal to N;
each second switch branch comprises a third switch tube;
the first end of the third switching tube is connected with the first end of the second switching branch, and the second end of the third switching tube is connected with the second end of the second switching branch;
when the microwave power switch circuit works, the switch state of the third switch tube in the same switch module is the same as that of the first switch tube.
In one possible implementation, the third matching element is an impedance matching circuit.
In one possible implementation, the first matching element and the second matching element are both impedance matching circuits.
In one possible implementation, the microwave power switching circuit further includes a control module;
the first switch tube and the second switch tube are both controlled by the control module.
In a second aspect, an embodiment of the present invention provides a microwave power switching device, including the microwave power switching circuit according to the first aspect or any one of the possible implementation manners of the first aspect.
In a third aspect, an embodiment of the present invention provides a control method, which is applied to the microwave power switching circuit according to the first aspect or any possible implementation manner of the first aspect, or to the microwave power switching device according to the second aspect;
the control method comprises the following steps:
when the microwave power switch circuit works, the radio frequency output port and the radio frequency input port corresponding to one switch module are controlled to be in a conducting state, and the radio frequency output ports and the radio frequency input ports corresponding to other switch modules are controlled to be in an isolating state.
In a possible implementation manner, controlling the radio frequency output port and the radio frequency input port corresponding to one of the switch modules to be in a conducting state, and controlling the radio frequency output ports and the radio frequency input ports corresponding to the other switch modules to be in an isolating state includes:
controlling a first switch tube in one of the switch modules to be in a disconnected state, and controlling a second switch tube in one of the switch modules to be in a connected state, so that a radio frequency output port and a radio frequency input port corresponding to one of the switch modules are in a connected state;
and controlling the first switch tubes in other switch modules to be in a conducting state and controlling the second switch tubes in other switch modules to be in a disconnecting state so as to enable the radio frequency output ports and the radio frequency input ports corresponding to other switch modules to be in an isolating state.
In a possible implementation manner, controlling that the radio frequency output port and the radio frequency input port corresponding to one of the switch modules are in a conducting state, and controlling that the radio frequency output ports and the radio frequency input ports corresponding to other switch modules are in an isolating state, further includes:
and controlling the third switching tubes in one of the switching modules to be in an off state, and controlling the third switching tubes in the other switching modules to be in an on state.
The embodiment of the invention provides a microwave power switch circuit, a device and a control method, wherein the circuit comprises a radio frequency input port, a first matching element, a second matching element, at least one radio frequency output port and at least one switch module; the switch modules correspond to the radio frequency output ports one to one; the switch module comprises a first switch branch; the first switch branch comprises a first switch tube, a second switch tube and an absorption load; in the same first switch branch, the first switch tube is connected with the absorption load in series, and the second switch tube is connected with the absorption load in parallel. According to the embodiment of the invention, the absorption load is connected with the second switch tube in parallel, and the second switch tube is switched into the on state and the off state, so that the absorption load is respectively connected with the on-resistance and the off-state capacitance of the second switch tube in parallel, the insertion loss and the isolation of the first switch branch circuit are optimized, the insertion loss of the microwave power switch circuit can be reduced, and the isolation of the microwave power switch circuit can be improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
Fig. 1 is a schematic structural diagram of a microwave power switching circuit according to an embodiment of the present invention;
fig. 2 is a simplified equivalent circuit diagram of a microwave power switch circuit according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a conventional microwave power switching circuit;
FIG. 4 is a simplified equivalent circuit schematic of a conventional microwave power switching circuit;
fig. 5 is a schematic structural diagram of another microwave power switch circuit according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a conventional two-stage single pole, double throw absorption switch;
FIG. 7 is a schematic diagram of a two-stage single pole, double throw absorption switch provided by an embodiment of the present invention;
FIG. 8 is a graph showing simulation results of a conventional two-stage single pole, double throw absorption switch;
fig. 9 is a diagram illustrating simulation results of a two-stage single-pole double-throw absorption switch according to an embodiment of the present invention.
Detailed Description
In order to make the technical solution better understood by those skilled in the art, the technical solution in the embodiment of the present invention will be clearly described below with reference to the drawings in the embodiment of the present invention, and it is obvious that the described embodiment is a part of the embodiment of the present invention, and not a whole embodiment. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present disclosure without any creative effort shall fall within the protection scope of the present disclosure.
The terms "include" and any other variations in the description and claims of this document and the above-described figures, mean "include but not limited to", and are intended to cover non-exclusive inclusions and not limited to the examples listed herein. Furthermore, the terms "first" and "second," etc. are used to distinguish between different objects and are not used to describe a particular order.
At present, for an absorption switch, the implementation scheme for reducing the insertion loss and improving the isolation is as follows:
(1) for the FET switching circuit, the resonant frequency of the switching tube is adjusted by connecting the switching tube in parallel with an inductor or a capacitor, so that the insertion loss of the absorption switch is reduced, and the isolation degree of the absorption switch is improved, and the circuit topology is unchanged. However, the application bandwidth of the scheme is narrow, and particularly in a low-frequency band, the volume of the parallel branches is too large to realize.
(2) For a PIN switch circuit, the isolation of a bias part is optimized or the parasitic parameters of a PIN switch tube are changed, so that the insertion loss of an absorption switch is reduced and the isolation of the absorption switch is improved. However, the scheme does not improve the circuit topology and does not optimize the performance from the circuit structure level.
(3) A differential amplifier is used for providing a transmission channel and an isolation channel, so that a scheme of high circuit isolation is achieved. However, this solution cannot be applied to high power circuits because the power endurance of the differential amplifier tube is low.
(4) The isolation is increased by increasing the number of switching stages. Increasing the number of switching stages is the most direct scheme for optimizing the isolation, but each additional stage of switching not only increases the circuit area, but also introduces a certain insertion loss.
In view of the above problems, an embodiment of the present invention provides a microwave power switching circuit, and the following detailed description is made with reference to the accompanying drawings:
fig. 1 is a schematic structural diagram of a microwave power switch circuit according to an embodiment of the present invention. Referring to fig. 1, the microwave power switching circuit includes a radio frequency input port COM, a first matching element, a second matching element, at least one radio frequency output port, and at least one switching module; the switch modules correspond to the radio frequency output ports one to one;
the switch module comprises a first switch branch; the first end of the first switch branch is connected with the corresponding radio frequency output port through a first matching element, the first end of the first switch branch is also connected with the radio frequency input port through a second matching element, and the second end of the first switch branch is grounded;
the first switch branch comprises a first switch tube, a second switch tube and an absorption load;
in the same first switch branch, a first switch tube is connected with an absorption load in series, a second switch tube is connected with the absorption load in parallel, a first end of the first switch branch is connected with the first end of the absorption load after the first switch tube is connected with the absorption load in series, and a second end of the first switch branch is connected with a second end of the first switch branch after the first switch tube is connected with the absorption load in series;
when the microwave power switch circuit works, the switching state of the first switching tube and the switching state of the second switching tube in the same switching module are opposite, so that the radio frequency output port and the radio frequency output input corresponding to the switching module are in a conducting state or an isolating state.
It should be noted that fig. 1 shows a microwave power switch circuit including two rf output ports and two switch modules. The RF1 and the RF2 are radio frequency output ports, the C and the D are first switch branches, the SW1 and the SW2 are first switch tubes, the SW3 and the SW4 are second switch tubes, the R1 and the R2 are absorption loads, the P1 and the P2 are first matching elements, and the P3 and the P4 are second matching elements. When the microwave power switch circuit shown in fig. 1 is operated, the switch states of SW1 and SW3 are opposite; the switch states of SW2 and SW4 are opposite; the switch states of the SW1 and the SW4 are the same, and both are controlled by a control signal vg1 and are switched on and off; the switch states of SW2 and SW3 are the same, and both are controlled by control signal vg2, which is also switched on and off. The first matching element and the second matching element may be designed into corresponding impedance matching circuits according to practical situations, and are not limited in particular.
The first switch tube is connected in series with the absorption load, the second switch tube is connected in parallel with the absorption load, the first switch tube can be connected in series with the absorption load through a source electrode or a drain electrode of the first switch tube, and the second switch tube is connected in parallel with the absorption load through the source electrode and the drain electrode of the second switch tube. The absorptive load may be an absorptive load resistance.
The microwave power switch circuit provided by the embodiment of the invention is an absorption switch circuit.
For any first switch branch, if the first switch tube of the first switch branch is in an off state (i.e., an off state) and the second switch tube of the first switch branch is in an on state (i.e., an on state), the radio frequency output port and the radio frequency input port corresponding to the switch module where the first switch branch is located are in an on state; if the first switch tube of the first switch branch is in a conducting state and the second switch tube of the first switch branch is in a disconnecting state, the radio frequency output port and the radio frequency input port corresponding to the switch module where the first switch branch is located are in an isolating state.
In this embodiment, the number of the switch modules and the number of the rf output ports may be set according to actual requirements. When the number of the microwave power switch circuit and the microwave power switch circuit is 1, the microwave power switch circuit is a single-pole single-throw switch circuit; when the number of the microwave power switch circuit and the microwave power switch circuit is 2, the microwave power switch circuit is a single-pole double-throw switch circuit; when the number of the microwave power switch circuit and the microwave power switch circuit is more than 2, the microwave power switch circuit is a single-pole multi-throw switch circuit.
It should be noted that the idea of reducing insertion loss and improving isolation by connecting the second switching tube in parallel with the absorption load according to the present invention can be applied not only to the single-pole single-throw switch, the single-pole double-throw switch, and the single-pole multiple-throw switch, but also to any other applicable switches, for example, the double-pole multiple-throw switch, and the like.
Fig. 2 is a schematic diagram of a simplified equivalent circuit of a microwave power switch circuit according to an embodiment of the present invention, and fig. 1 and fig. 2 are schematic diagrams of a single-pole double-throw switch circuit. Referring to fig. 1 and fig. 2, both RF1 and RF2 are RF output ports, COM is an RF input port, and for example, RF1-COM path conduction and RF2-COM path isolation are taken as examples, at this time, the first switching branch C is in a high impedance state, the first switching tube SW1 is disconnected, the second switching tube SW3 is connected, and the absorption load R1 is short-circuited; meanwhile, the first switch branch D is in a low impedance state, the first switch tube SW2 is turned on, the second switch tube SW4 is turned off, and the absorption load R2 is turned on. A specific analysis of this circuit is as follows:
the parallel structure Insertion Loss (IL) formula is:
wherein, Y 0 ＝1/Z 0 ，Z 0 Is characteristic impedance, G H And B H Respectively, the admittance Y under the high resistance state of the parallel switch branch (i.e. the first switch branch) H The real part and the imaginary part of (G), IL and G H And B H Is in positive correlation.
Similarly, the formula of the Isolation (ISO) of the parallel structure is as follows:
wherein, Y 0 ＝1/Z 0 ，Z 0 Is characteristic impedance, G L And B L Respectively an admittance Y under the low impedance state of a parallel switch branch L Real and imaginary parts of, knowing ISO and G L And B L Is in positive correlation.
Fig. 3 is a schematic structural diagram of a conventional microwave power switch circuit, which can also be regarded as a schematic structural diagram of a conventional absorption switch circuit. Fig. 4 is a simplified equivalent circuit schematic of the conventional microwave power switch circuit shown in fig. 3. Conventional microwave power switching circuits do not have parallel switches at the absorption load.
Referring to FIGS. 3 and 4, when the RF1-COM path is conducted and the RF2-COM path is isolated, the admittance of the A branch in the high impedance state is calculated
Correspond to
And
respectively expressed as:
referring to fig. 1 and 2, when the first switching branch C is in the high impedance state, R 1 And R on3 Parallel connection, can obtain the admittance of C branch high resistance state
Correspond to
And
respectively expressed as:
r in the first switching branch C in fig. 1 and 2, compared to the branch a in fig. 3 and 4 1 And R on3 Parallel connection (R) 1 About 50 omega, R on3 About 2 Ω) corresponding to
And
r in (1) 1 And decreases. To be provided with
And
as a function, R 1 In that
Intervals, all increase monotonically. Due to C off1 Generally, the frequency is in the order of 100fF, so in the range of less than 30GHz, it can be known from the formula (1-1) that, in the high impedance state, the insertion loss of the first switch branch C is always smaller than that of the branch a, that is, the insertion loss of the microwave power switch circuit provided by the present application is reduced.
According to FIG. 3 and FIG. 4, the admittance in the low-impedance state of the branch B is calculated
According to fig. 1 and 2, the admittance at the low-resistance state of the first switching leg D is calculated
Correspond to
And
respectively expressed as:
comparing the low-resistance state branch B with the low-resistance state branch D, the branch B is equivalent to the branch C off4 0. If C off4 ≠0，
And is
According to the formula (1-2), the isolation of the branch D is always greater than that of the branch B in the low-resistance state, that is, the isolation of the microwave power switch circuit provided by the present application is increased.
By combining the theoretical analysis of the circuits, the microwave power switch circuit provided by the embodiment of the invention optimizes the insertion loss and the isolation of the whole circuit by optimizing the insertion loss and the isolation of the parallel branch of the switch in the frequency range of less than 30GHz, and has great advantages compared with the traditional absorption switch circuit.
The microwave power switch circuit provided by the embodiment of the invention comprises a radio frequency input port, a first matching element, a second matching element, at least one radio frequency output port and at least one switch module; the switch modules correspond to the radio frequency output ports one to one; the switch module comprises a first switch branch; the first switch branch comprises a first switch tube, a second switch tube and an absorption load; in the same first switch branch, the first switch tube is connected with the absorption load in series, and the second switch tube is connected with the absorption load in parallel. In the embodiment of the invention, the absorption load is connected with the second switch tube in parallel, and the second switch tube is switched into the on state and the off state, so that the absorption load is respectively connected with the on-resistance and the off-state capacitor of the second switch tube in parallel, the insertion loss and the isolation of the first switch branch circuit are optimized, the insertion loss of the microwave power switch circuit can be reduced, and the isolation of the microwave power switch circuit can be improved.
In some embodiments, if the number of the radio frequency output ports is greater than or equal to 2, when the microwave power switch circuit operates, the radio frequency output port and the radio frequency input port corresponding to one of the switch modules are in a conducting state, and the radio frequency output ports and the radio frequency input ports corresponding to the other switch modules are in an isolating state.
In this embodiment, when the number of the radio frequency output ports is greater than or equal to 2, that is, the number of the switch modules is greater than or equal to 2, if the microwave power switch circuit operates, the radio frequency output port and the radio frequency input port corresponding to one of the switch modules in the circuit are in a conducting state, and the radio frequency output ports and the radio frequency input ports corresponding to the other switch modules are in an isolating state; . The other switch modules are switch modules except for the switch module in a conducting state between the corresponding radio frequency output port and the corresponding radio frequency input port.
In a possible implementation manner, if the number of the radio frequency output ports is 1, when the microwave power switch circuit operates, the radio frequency input port and the radio frequency output port of the circuit are in a conducting state or an isolating state.
In a possible implementation manner, if the number of the radio frequency output ports is greater than or equal to 2, when the microwave power switch circuit operates, the radio frequency output port and the radio frequency input port corresponding to at least one of the switch modules are in a conducting state, and the radio frequency output ports and the radio frequency input ports corresponding to other switch modules are in an isolating state.
In some embodiments, referring to fig. 5, the switch module further includes N stages of second switch branches and N third matching elements, where the second switch branches and the third matching elements are in one-to-one correspondence, and N ≧ 1;
the first end of the first-stage second switch branch circuit is connected with the first end of the first switch branch circuit through a corresponding third matching element, and the second end of the first-stage second switch branch circuit is grounded; the first end of the Nth-stage second switch branch is connected with the radio frequency input port through a second matching element;
the first end of the M-level second switch branch circuit is connected with the first end of the M-1-level second switch branch circuit through a corresponding third matching element, and the second end of the M-level second switch branch circuit is grounded; m is more than or equal to 2 and less than or equal to N;
each second switch branch comprises a third switch tube;
the first end of the third switching tube is connected with the first end of the second switching branch, and the second end of the third switching tube is connected with the second end of the second switching branch;
when the microwave power switch circuit works, the switch state of the third switch tube in the same switch module is the same as that of the first switch tube.
The first end and the second end of the third switching tube may be a source and a drain of the third switching tube, respectively.
Referring to fig. 5, each of SW11, SW12, SW21 and SW22 is a third switching tube, and each branch where the third switching tube is located is a second switching branch. P5, P6, P7 and P8 are all third mating elements. P5 is the third matching element corresponding to the second switching branch in which SW11 is located, P6 is the third matching element corresponding to the second switching branch in which SW21 is located, P7 is the third matching element corresponding to the second switching branch in which SW12 is located, and P8 is the third matching element corresponding to the second switching branch in which SW22 is located.
In this embodiment, the value of N may be set according to actual requirements, and is not limited herein. The third matching element may be designed as an impedance matching circuit according to practical requirements, and is not particularly limited herein.
In the same switch module, the switch state of each third switch tube is consistent with the switch state of the first switch tube.
In some embodiments, the third matching element is an impedance matching circuit.
In some embodiments, the first matching element and the second matching element are both impedance matching circuits.
In this embodiment, the impedance matching circuits corresponding to the first matching element, the second matching element and each third matching element may be designed according to actual requirements. The impedance matching circuits corresponding to the first matching element, the second matching element and the third matching element may be different, and the impedance matching circuits corresponding to different third matching elements may also be different. The impedance matching circuit may include at least one of an inductor, a capacitor, and a microstrip line.
In some embodiments, the microwave power switching circuit further comprises a control module;
the first switch tube and the second switch tube are both controlled by the control module.
The control module is connected with the grid electrode of the first switch tube and the grid electrode of the second switch tube and is used for controlling the on-off states of the first switch tube and the second switch tube.
In one possible implementation, the third switching tubes are controlled by the control module. The control module is connected with the grid electrode of the third switching tube and used for controlling the switching state of the third switching tube.
The type of the switching tube in this embodiment is not particularly limited, and any applicable switching tube may be used.
In a specific application scenario, taking a GaN single-pole double-throw absorption type 100W power switch with two stages of 8-10 GHz as an example, a schematic diagram of a conventional two-stage single-pole double-throw absorption type switch is shown in fig. 6, and a schematic diagram of a two-stage single-pole double-throw absorption type switch provided by the present invention is shown in fig. 7. The switch tubes SW1, SW2, SW11 and SW21 of the two circuits are of the same size, SW3 and SW4 are of the proper size, SW3 is connected with the absorption load R1 in parallel, SW4 is connected with the absorption load R2 in parallel, the control logics of SW1, SW11 and SW4 are consistent, and the control logics of SW2, SW21 and SW3 are consistent.
When the RF1-COM circuit is on and the RF2-COM circuit is isolated, the conventional two-stage single-pole double-throw absorption switch (as shown in fig. 6) turns off SW1 and SW11, and simultaneously turns on SW2 and SW22, and the simulation result obtained under the optimal matching is shown in fig. 8 (the insertion loss is 0.70dB-0.75dB, and the isolation is 27dB-29 dB); in the two-stage single-pole double-throw absorption switch (as shown in fig. 7), the SW1, the SW11 and the SW4 are closed, meanwhile, the SW2, the SW21 and the SW3 are opened, and a simulation result is obtained under the optimal matching condition and is shown in fig. 9 (the insertion loss is 0.55dB-0.60dB, and the isolation is 28dB-30 dB). Comparing fig. 8 and fig. 9, it can be seen that, compared with the conventional absorption switch, the absorption switch provided by the present invention has a small difference between the standing waves of the conduction path, the standing wave of the isolation path is optimized to a certain extent, the insertion loss is reduced by 0.15dB, and the isolation is increased by 1 dB.
As can be seen from the above comparison, the absorption switch provided in the embodiment of the present invention optimizes the insertion loss and isolation of the whole circuit by using the structure in which the absorption load is connected in parallel with the switch. The absorption switch has lower insertion loss and higher isolation degree, and has important significance in practical engineering application.
It should be noted that, the circuits in the drawings of the present application are schematic diagrams drawn by taking a single-pole double-throw switch as an example, and in practical application, the number of the radio frequency output ports and the number of the switch modules may be set according to actual requirements, which is not specifically limited herein.
Corresponding to the microwave power switch circuit, an embodiment of the present invention further provides a microwave power switch apparatus, including the microwave power switch circuit according to any of the embodiments, having the same beneficial effects as the microwave power switch circuit.
Corresponding to the microwave power switch circuit or the microwave power switch device, an embodiment of the present invention provides a control method, which is applied to the microwave power switch circuit or the microwave power switch device according to any of the above embodiments;
the control method comprises the following steps:
when the microwave power switch circuit works, the radio frequency output port and the radio frequency input port corresponding to one switch module are controlled to be in a conducting state, and the radio frequency output ports and the radio frequency input ports corresponding to other switch modules are controlled to be in an isolating state.
In some embodiments, controlling the radio frequency output port and the radio frequency input port corresponding to one of the switch modules to be in a conducting state, and controlling the radio frequency output ports and the radio frequency input ports corresponding to the other switch modules to be in an isolating state includes:
controlling a first switch tube in one of the switch modules to be in a disconnected state, and controlling a second switch tube in the one of the switch modules to be in a connected state, so that a radio frequency output port and a radio frequency input port corresponding to the one of the switch modules are in a connected state;
and controlling the first switch tubes in other switch modules to be in a conducting state and controlling the second switch tubes in the other switch modules to be in a disconnecting state so as to enable the radio frequency output ports and the radio frequency input ports corresponding to the other switch modules to be in an isolating state.
In some embodiments, controlling the radio frequency output port and the radio frequency input port corresponding to one of the switch modules to be in a conducting state, and controlling the radio frequency output ports and the radio frequency input ports corresponding to the other switch modules to be in an isolating state, further includes:
and controlling the third switching tubes in the one switching module to be in an off state, and controlling the third switching tubes in the other switching modules to be in an on state.
For a detailed description of the control method, reference may be made to the detailed description of the microwave power switching circuit, which is not described herein again.
The above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (10)
1. A microwave power switch circuit is characterized by comprising a radio frequency input port, a first matching element, a second matching element, at least one radio frequency output port and at least one switch module; the switch modules correspond to the radio frequency output ports one to one;
the switch module comprises a first switch branch; the first end of the first switch branch is connected with the corresponding radio frequency output port through the first matching element, the first end of the first switch branch is also connected with the radio frequency input port through the second matching element, and the second end of the first switch branch is grounded;
the first switch branch comprises a first switch tube, a second switch tube and an absorption load;
in the same first switch branch, a first switch tube is connected with an absorption load in series, a second switch tube is connected with the absorption load in parallel, a first end of the first switch branch is connected with the first end of the absorption load after the first switch tube is connected with the absorption load in series, and a second end of the first switch branch is connected with a second end of the first switch branch after the first switch tube is connected with the absorption load in series;
when the microwave power switch circuit works, the switching state of the first switching tube and the switching state of the second switching tube in the same switching module are opposite, so that the radio frequency output port corresponding to the switching module and the radio frequency input port are in a conducting state or an isolating state.
2. The microwave power switching circuit according to claim 1, wherein if the number of the rf output ports is greater than or equal to 2, when the microwave power switching circuit operates, the rf output port corresponding to one of the switch modules and the rf input port are in a conducting state, and the rf output ports corresponding to the other switch modules and the rf input port are in an isolating state.
3. The microwave power switching circuit according to claim 1, wherein the switching module further comprises N stages of second switching branches and N third matching elements, the second switching branches and the third matching elements are in one-to-one correspondence, N ≧ 1;
the first end of the first-stage second switch branch circuit is connected with the first end of the first switch branch circuit through a corresponding third matching element, and the second end of the first-stage second switch branch circuit is grounded; the first end of the Nth-stage second switch branch circuit is connected with the radio frequency input port through the second matching element;
the first end of the M-level second switch branch circuit is connected with the first end of the M-1-level second switch branch circuit through a corresponding third matching element, and the second end of the M-level second switch branch circuit is grounded; m is more than or equal to 2 and less than or equal to N;
each second switch branch comprises a third switch tube;
the first end of the third switching tube is connected with the first end of the second switching branch, and the second end of the third switching tube is connected with the second end of the second switching branch;
when the microwave power switch circuit works, the switch state of the third switch tube in the same switch module is the same as that of the first switch tube.
4. A microwave power switching circuit in accordance with claim 3 wherein the third matching element is an impedance matching circuit.
5. A microwave power switching circuit in accordance with claim 1 wherein the first matching element and the second matching element are impedance matching circuits.
6. A microwave power switching circuit according to any one of claims 1 to 5 further comprising a control module;
the first switch tube and the second switch tube are controlled by the control module.
7. Microwave power switching device, characterized in that it comprises a microwave power switching circuit according to any of claims 1 to 6.
8. A control method, applied to a microwave power switching circuit according to any one of claims 1 to 6 or a microwave power switching device according to claim 7;
the control method comprises the following steps:
when the microwave power switch circuit works, the radio frequency output port corresponding to one switch module and the radio frequency input port are controlled to be in a conducting state, and the radio frequency output ports corresponding to other switch modules and the radio frequency input port are controlled to be in an isolating state.
9. The method according to claim 8, wherein the controlling of the rf output port and the rf input port corresponding to one of the switch modules to be in a conducting state and the controlling of the rf output ports and the rf input ports corresponding to the other switch modules to be in an isolating state comprises:
controlling a first switch tube in one of the switch modules to be in an off state, and controlling a second switch tube in one of the switch modules to be in a conducting state, so that a radio frequency output port and a radio frequency input port corresponding to one of the switch modules are in a conducting state;
and controlling the first switch tubes in the other switch modules to be in a conducting state, and controlling the second switch tubes in the other switch modules to be in a disconnecting state, so that the radio frequency output ports corresponding to the other switch modules and the radio frequency input ports are in an isolating state.
10. The method according to claim 9, wherein the controlling of the rf output port and the rf input port corresponding to one of the switch modules to be in a conducting state and the controlling of the rf output ports and the rf input ports corresponding to the other switch modules to be in an isolating state further comprises:
and controlling the third switching tubes in one of the switching modules to be in an off state, and controlling the third switching tubes in the other switching modules to be in an on state.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210278146.7A CN114826242A (en) | 2022-03-21 | 2022-03-21 | Microwave power switch circuit, device and control method |
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| CN202210278146.7A CN114826242A (en) | 2022-03-21 | 2022-03-21 | Microwave power switch circuit, device and control method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116260438A (en) * | 2023-02-07 | 2023-06-13 | 北京无线电测量研究所 | High-power switch |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116260438A (en) * | 2023-02-07 | 2023-06-13 | 北京无线电测量研究所 | High-power switch |
| CN116260438B (en) * | 2023-02-07 | 2023-09-15 | 北京无线电测量研究所 | High-power switch |
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