CN114825886A - High-precision low-power-consumption over-temperature protection circuit - Google Patents

High-precision low-power-consumption over-temperature protection circuit Download PDF

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Publication number
CN114825886A
CN114825886A CN202210394319.1A CN202210394319A CN114825886A CN 114825886 A CN114825886 A CN 114825886A CN 202210394319 A CN202210394319 A CN 202210394319A CN 114825886 A CN114825886 A CN 114825886A
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China
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tube
pmos tube
electrode
nmos
pmos
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CN202210394319.1A
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Chinese (zh)
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沈剑均
许美程
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Yisiyuan Semiconductor Nanjing Co ltd
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Yisiyuan Semiconductor Nanjing Co ltd
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Priority to CN202210394319.1A priority Critical patent/CN114825886A/en
Publication of CN114825886A publication Critical patent/CN114825886A/en
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Protection Of Static Devices (AREA)

Abstract

The high-precision low-power-consumption over-temperature protection circuit comprises a starting circuit, a PTAT (proportional To Absolute temperature) current source module, a CTAT (complementary To Absolute temperature) current source module and an over-temperature protection core circuit, wherein the starting circuit comprises a first PMOS (P-channel metal oxide semiconductor) tube PM (pulse-width modulation) tube PM) tube 1 And a second PMOS tube PM 2 A first NMOS transistor NM 1 A second NMOS transistor NM 2 Wherein the PATA current source module comprises a third PMOS tube PM 3 And the fourth PMOS tube PM 4 And a third NMOS transistor NM 3 And a fourth NMOS tube NM 4 A first resistor R 1 Wherein the CTAT current source module comprises a fifth PMOS tube PM 5 And the sixth PMOS tube PM 6 And a fifth NMOS transistor NM 5 And a sixth NMOS transistor NM 6 A second resistor R 2 Wherein the over-temperature protection core circuit comprises a seventh PMOS tube PM 7 And the eighth PMOS tube PM 8 And the ninth PMOS tube PM 9 And a seventh NMOS transistor NM 7 And an eighth NMOS transistor NM 8 A third resistor R 3 A fourth resistor R 4 Fifth, theResistance R 5 A sixth resistor R 6 Comparator COMP, first inverter U 1 A second inverter U 2 The invention generates a temperature-independent voltage V by obtaining a PTAT current and a CTAT current which both act together on a resistor REF Then V is compared by a comparator REF And a voltage related to the temperature is compared to realize the function of over-temperature protection.

Description

High-precision low-power-consumption over-temperature protection circuit
Technical Field
The invention relates to a high-precision low-power-consumption over-temperature protection circuit, which particularly provides a high-precision low-power-consumption over-temperature protection circuit, along with the development of an integrated circuit, the integration level of a chip is higher and the energy consumption density is higher, the temperature of the chip is higher due to energy consumption, the thermal breakdown of a PN junction is easy to cause, and the chip is damaged irreversibly, the over-temperature protection circuit can monitor the internal temperature of the chip in real time, and the chip can be automatically turned off when the temperature exceeds a certain threshold value, so that the large-area damage of the chip caused by over-temperature is prevented.
Background
The traditional over-temperature protection circuit is designed by using the temperature characteristic of a bipolar transistor to detect the working temperature of a chip, the circuit generates a current positively correlated with the temperature to act on a resistor to obtain a temperature detection voltage, then the temperature detection voltage is compared with a band gap reference voltage without a temperature coefficient set by a system through a voltage comparator, and when the temperature detection voltage is higher than the band gap reference voltage, the chip is turned off.
Disclosure of Invention
On the basis of the traditional over-temperature protection circuit, the voltage generated on the resistor by using the PTAT current source and the CTAT current source replaces a band-gap reference voltage to be used as a temperature-coefficient-free voltage to be compared with a temperature detection voltage, and an NM is added 7 、NM 8 The data selector forms an alternative, the input of the data selector is determined by resistors R4, R5 and R6, and the output end of the data selector acts on the negative input end of the comparator, so that the temperature change is more accurate.
The over-temperature protection circuit with high precision and low power consumption is used for protecting a chip from irreversible damage caused by over-high temperature, and comprises a starting circuit module, wherein the starting circuit module comprises a first PMOS (P-channel metal oxide semiconductor) tube PM (particulate matter) 1 A second PMOS tube PM 2 A first NMOS transistor NM 1 And a second NMOS tube NM 2 The source electrode of the first PMOS tube is connected with VDD, the drain electrode is connected with the grid electrode and is connected To the source electrode of the second PMOS tube, the drain electrode and the grid electrode of the second PMOS tube are connected and are respectively connected with the drain electrode of the first NMOS tube and the grid electrode of the second NMOS tube, the source electrode of the first NMOS tube is grounded, the grid electrode of the first NMOS tube is connected with the drain electrode of the seventh PMOS tube in the over-temperature protection core circuit, the source electrode of the second NMOS tube is grounded, and the drain electrode is used as the output of the starting circuit and is connected with the grid electrode of the third PMOS tube in the PTAT (proportional To Absolute temperature) current source module.
In particular, the followingThe PTAT (proportional To Absolute temperature) current source module comprises a third PMOS tube PM 3 And the fourth PMOS tube PM 4 And a third NMOS transistor NM 3 And a fourth NMOS tube NM 4 A first resistor R 1 Wherein the source electrodes of the third PMOS tube and the fourth PMOS tube are connected with VDD, the grid electrode of the third PMOS tube and the grid electrode of the fourth PMOS tube are connected and connected with the output of the starting circuit, and are respectively connected with the grid electrode of the fifth PMOS tube in the CTAT (complementary To Absolute temperature) current source module and the grid electrode of the eighth PMOS tube and the ninth PMOS tube in the over-temperature protection core circuit, and the drain electrode of the third PMOS tube passes through R 1 The drain electrode of the fourth PMOS tube is connected with the grid electrode of the fourth PMOS tube and is connected to the drain electrode of the fourth NMOS tube, the grid electrode of the fourth NMOS tube is connected to the drain electrode of the third NMOS tube, and the source electrode of the fourth NMOS tube is grounded.
Specifically, the ctat (complementary To Absolute temperature) current source module includes a fifth PMOS transistor PM 5 And the sixth PMOS tube PM 6 And a fifth NMOS transistor NM 5 And a sixth NMOS transistor NM 6 A second resistor R 2 The grid electrode of the fifth PMOS tube is provided with bias voltage by a PTAT, the source electrode of the fifth PMOS tube is connected with VDD, the drain electrode of the fifth PMOS tube is respectively connected with the grid electrode of the sixth NMOS tube and the drain electrode of the fifth NMOS tube, the grid electrode of the fifth NMOS tube is connected with the source electrode of the sixth NMOS tube, the source electrode of the fifth NMOS tube is grounded, and the source electrode of the sixth NMOS tube is connected with the source electrode of the sixth NMOS tube through a resistor R 2 And the drain electrode of the sixth NMOS tube is connected with the drain electrode of the sixth PMOS tube, the drain electrode of the sixth PMOS tube is connected with the grid electrode of the sixth PMOS tube and is connected with the grid electrode of a seventh PMOS tube in the over-temperature protection core circuit, and the source electrode of the sixth PMOS tube is connected with VDD.
Specifically, the over-temperature protection core circuit comprises a seventh PMOS tube PM 7 And the eighth PMOS tube PM 8 And the ninth PMOS tube PM 9 And a seventh NMOS transistor NM 7 And an eighth NMOS transistor NM 8 A third resistor R 3 A fourth resistor R 4 A fifth resistor R 5 A sixth resistor R 6 Comparator COMP, first inverter U 1 A second inverter U 2 Which isThe source electrodes of the seventh PMOS tube, the eighth PMOS tube and the ninth PMOS tube are connected with VDD, the grid electrode of the seventh PMOS tube is provided with bias voltage by CTAT, and the drain electrode of the seventh PMOS tube passes through a resistor R 3 Grounding, simultaneously connecting the drain of the eighth PMOS tube and the positive input end of the comparator COMP, providing voltage bias for the gates of the eighth PMOS tube and the ninth PMOS tube by PTAT, and passing the drain of the ninth PMOS tube through a resistor R 4 A source electrode of a seventh NMOS tube, a grid electrode of the seventh NMOS tube is connected with an output end of the second phase inverter, a drain electrode of the seventh NMOS tube is respectively connected with a negative input end of a comparator COMP and a source electrode of an eighth NMOS tube, and the drain electrode of the eighth NMOS tube passes through a resistor R 5 Connected with the source electrode of the seventh NMOS transistor and passes through a resistor R 6 The grid electrode of the eighth NMOS tube is connected with the output end of the first inverter and serves as the output end OTP _ OUT of the over-temperature protection circuit, the output end of the comparator COMP is connected with the input end of the first inverter, and the output end of the first inverter is connected with the input end of the second inverter.
The invention has the beneficial effects that: an additional band gap reference circuit is not needed, the whole circuit structure is simplified, meanwhile, a data selector is added to the negative input end of the comparator, the precision of temperature detection is improved, and the power consumption is reduced.
Drawings
Fig. 1 is a circuit diagram of an over-temperature protection circuit with high accuracy and low power consumption according to the present invention.
Detailed Description
The invention provides a high-precision low-power-consumption over-temperature protection circuit which comprises a starting circuit, a PTAT (proportional To Absolute temperature) current source module, a CTAT (complementary To Absolute temperature) current source module and an over-temperature protection core circuit, wherein the starting circuit is used for providing bias voltage for the PTAT and comprises a first PMOS (P-channel metal oxide semiconductor) tube PM (PM) 1 And a second PMOS tube PM 2 A first NMOS transistor NM 1 And a second NMOS tube NM 2 The source electrode of the first PMOS tube is connected with VDD, the drain electrode is connected with the grid electrode and is connected to the source electrode of the second PMOS tube, the drain electrode and the grid electrode of the second PMOS tube are connected and are respectively connected with the drain electrode of the first NMOS tube and the grid electrode of the second NMOS tube, the source electrode of the first NMOS tube is grounded, and the grid electrode of the first NMOS tube is connected with the seventh P in the over-temperature protection core circuitThe drain electrode of the MOS tube is connected, the source electrode of the second NMOS tube is grounded, and the drain electrode is used as the output of the starting circuit and is connected with the grid electrode of a third PMOS tube in the PTAT (proportional To Absolute temperature) current source module.
The invention generates a current positively correlated with temperature by a PTAT (proportional To Absolute temperature) current source module, which comprises a third PMOS tube PM 3 And the fourth PMOS tube PM 4 And a third NMOS transistor NM 3 And a fourth NMOS tube NM 4 A first resistor R 1 Wherein the source electrodes of the third PMOS tube and the fourth PMOS tube are connected with VDD, the grid electrode of the third PMOS tube and the grid electrode of the fourth PMOS tube are connected and connected with the output of the starting circuit, and are respectively connected with the grid electrode of the fifth PMOS tube in the CTAT (complementary To Absolute temperature) current source module and the grid electrode of the eighth PMOS tube and the ninth PMOS tube in the over-temperature protection core circuit, and the drain electrode of the third PMOS tube passes through R 1 The drain electrode of the fourth PMOS tube is connected with the grid electrode of the fourth PMOS tube and is connected to the drain electrode of the fourth NMOS tube, the grid electrode of the fourth NMOS tube is connected to the drain electrode of the third NMOS tube, and the source electrode of the fourth NMOS tube is grounded.
The invention generates the current inversely related To the temperature by a CTAT (complementary To Absolute temperature) current source module, which comprises a fifth PMOS tube PM 5 And the sixth PMOS tube PM 6 And a fifth NMOS transistor NM 5 And a sixth NMOS transistor NM 6 A second resistor R 2 The grid electrode of the fifth PMOS tube is provided with bias voltage by a PTAT, the source electrode of the fifth PMOS tube is connected with VDD, the drain electrode of the fifth PMOS tube is respectively connected with the grid electrode of the sixth NMOS tube and the drain electrode of the fifth NMOS tube, the grid electrode of the fifth NMOS tube is connected with the source electrode of the sixth NMOS tube, the source electrode of the fifth NMOS tube is grounded, and the source electrode of the sixth NMOS tube is connected with the source electrode of the sixth NMOS tube through a resistor R 2 And the drain electrode of the sixth NMOS tube is connected with the drain electrode of the sixth PMOS tube, the drain electrode of the sixth PMOS tube is connected with the grid electrode of the sixth PMOS tube and is connected with the grid electrode of a seventh PMOS tube in the over-temperature protection core circuit, and the source electrode of the sixth PMOS tube is connected with VDD.
The invention realizes real-time monitoring of temperature by over-temperature protection of the core circuit, and ensures the coreThe chip is not damaged due to overhigh temperature and comprises a seventh PMOS tube PM 7 And the eighth PMOS tube PM 8 And the ninth PMOS tube PM 9 And a seventh NMOS transistor NM 7 And an eighth NMOS transistor NM 8 A third resistor R 3 A fourth resistor R 4 A fifth resistor R 5 A sixth resistor R 6 Comparator COMP, first inverter U 1 A second inverter U 2 The source electrodes of the seventh PMOS tube, the eighth PMOS tube and the ninth PMOS tube are connected with VDD, the grid electrode of the seventh PMOS tube is provided with bias voltage by CTAT, and the drain electrode of the seventh PMOS tube passes through a resistor R 3 Grounding, simultaneously connecting the drain of the eighth PMOS tube and the positive input end of the comparator COMP, providing voltage bias for the gates of the eighth PMOS tube and the ninth PMOS tube by PTAT, and passing the drain of the ninth PMOS tube through a resistor R 4 A source electrode of a seventh NMOS tube, a grid electrode of the seventh NMOS tube is connected with an output end of the second phase inverter, a drain electrode of the seventh NMOS tube is respectively connected with a negative input end of a comparator COMP and a source electrode of an eighth NMOS tube, and the drain electrode of the eighth NMOS tube passes through a resistor R 5 Connected with the source electrode of the seventh NMOS transistor and passes through a resistor R 6 The grid electrode of the eighth NMOS tube is connected with the output end of the first phase inverter and serves as the output end OTP _ OUT of the over-temperature protection circuit, the output end of the comparator is connected with the input end of the first phase inverter, and the output end of the first phase inverter is connected with the input end of the second phase inverter.
The circuit utilizes the difference delta V of the grid source voltage of the MOS tube working in the subthreshold region GS Generating a PTAT current source, and a gate-source voltage V of the MOS transistor GS Generating a CTAT current source acting together to generate a temperature-independent voltage V across a resistor REF The PTAT current source is used as a reference voltage, and a voltage which is in positive correlation with the temperature is generated by applying the PTAT current source to another circuit, so that the over-temperature detection is realized.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative examples and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the specification describes embodiments, not every embodiment includes only a single embodiment, and such description is for clarity purposes only, and it will be appreciated by those skilled in the art that the specification as a whole and the embodiments may be suitably combined to form other embodiments as will be apparent to those skilled in the art.

Claims (4)

1. The over-temperature protection circuit with high precision and low power consumption comprises a starting circuit module, and is characterized in that the starting circuit module comprises a first PMOS (P-channel metal oxide semiconductor) tube PM (particulate matter) 1 And a second PMOS tube PM 2 A first NMOS transistor NM 1 And a second NMOS tube NM 2 The source electrode of the first PMOS tube is connected with VDD, the drain electrode is connected with the grid electrode and is connected To the source electrode of the second PMOS tube, the drain electrode and the grid electrode of the second PMOS tube are connected and are respectively connected with the drain electrode of the first NMOS tube and the grid electrode of the second NMOS tube, the source electrode of the first NMOS tube is grounded, the grid electrode of the first NMOS tube is connected with the drain electrode of the seventh PMOS tube in the over-temperature protection core circuit, the source electrode of the second NMOS tube is grounded, and the drain electrode is used as the output of the starting circuit and is connected with the grid electrode of the third PMOS tube in the PTAT (proportional To Absolute temperature) current source module.
2. The over-temperature protection circuit with high precision and low power consumption according To claim 1, wherein the PTAT (proportional To Absolute temperature) current source module comprises a third PMOS pipe PM 3 And the fourth PMOS tube PM 4 And a third NMOS transistor NM 3 And a fourth NMOS tube NM 4 A first resistor R 1 The source electrodes of the third PMOS tube and the fourth PMOS tube are connected with VDD, the grid electrode of the third PMOS tube and the grid electrode of the fourth PMOS tube are connected and connected with the output of the starting circuit, and simultaneously connected To CTAT (Complementary To Absolute temperature controller) respectivelyure) the grid of the fifth PMOS tube in the current source module and the grid of the eighth PMOS tube and the ninth PMOS tube in the over-temperature protection core circuit, the drain electrode of the third PMOS tube passes through R 1 The drain electrode of the third NMOS tube is connected with the drain electrode of the third NMOS tube, the source electrode of the third NMOS tube is grounded, the grid electrode of the third PMOS tube is connected with the drain electrode of the third PMOS tube, the drain electrode of the fourth PMOS tube is connected with the grid electrode of the fourth PMOS tube and the drain electrode of the fourth NMOS tube, the grid electrode of the fourth NMOS tube is connected with the drain electrode of the third NMOS tube, and the source electrode of the fourth NMOS tube is grounded.
3. The over-temperature protection circuit of claim 2, wherein the CTAT (complementary To Absolute temperature) current source module comprises a fifth PMOS transistor PM 5 And the sixth PMOS tube PM 6 And a fifth NMOS transistor NM 5 And a sixth NMOS transistor NM 6 A second resistor R 2 The grid electrode of the fifth PMOS tube is provided with bias voltage by a PTAT, the source electrode of the fifth PMOS tube is connected with VDD, the drain electrode of the fifth PMOS tube is respectively connected with the grid electrode of the sixth NMOS tube and the drain electrode of the fifth NMOS tube, the grid electrode of the fifth NMOS tube is connected with the source electrode of the sixth NMOS tube, the source electrode of the fifth NMOS tube is grounded, and the source electrode of the sixth NMOS tube is connected with the source electrode of the sixth NMOS tube through a resistor R 2 And the drain electrode of the sixth NMOS tube is connected with the drain electrode of the sixth PMOS tube, the drain electrode of the sixth PMOS tube is connected with the grid electrode of the sixth PMOS tube and is connected with the grid electrode of a seventh PMOS tube in the over-temperature protection core circuit, and the source electrode of the sixth PMOS tube is connected with VDD.
4. The high-precision low-power-consumption over-temperature protection circuit as claimed in any one of claims 1 to 3, wherein the over-temperature protection core circuit comprises a seventh PMOS transistor PM 7 And the eighth PMOS tube PM 8 And the ninth PMOS tube PM 9 And a seventh NMOS transistor NM 7 And an eighth NMOS transistor NM 8 A third resistor R 3 A fourth resistor R 4 A fifth resistor R 5 A sixth resistor R 6 Comparator COMP, first inverter U 1 A second inverter U 2 The source electrodes of the seventh PMOS tube, the eighth PMOS tube and the ninth PMOS tube are connected with VDD, the grid electrode of the seventh PMOS tube is provided with bias voltage by CTAT, and the drain electrode of the seventh PMOS tube passes throughResistance R 3 Grounding, simultaneously connecting the drain of the eighth PMOS tube and the positive input end of the comparator COMP, providing voltage bias for the gates of the eighth PMOS tube and the ninth PMOS tube by PTAT, and passing the drain of the ninth PMOS tube through a resistor R 4 A source electrode of a seventh NMOS tube, a grid electrode of the seventh NMOS tube is connected with an output end of the second phase inverter, a drain electrode of the seventh NMOS tube is respectively connected with a negative input end of a comparator COMP and a source electrode of an eighth NMOS tube, and the drain electrode of the eighth NMOS tube passes through a resistor R 5 Connected with the source electrode of the seventh NMOS transistor and passes through a resistor R 6 The grid electrode of the eighth NMOS tube is connected with the output end of the first inverter and serves as the output end OTP _ OUT of the over-temperature protection circuit, the output end of the comparator COMP is connected with the input end of the first inverter, and the output end of the first inverter is connected with the input end of the second inverter.
CN202210394319.1A 2022-04-15 2022-04-15 High-precision low-power-consumption over-temperature protection circuit Pending CN114825886A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210394319.1A CN114825886A (en) 2022-04-15 2022-04-15 High-precision low-power-consumption over-temperature protection circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210394319.1A CN114825886A (en) 2022-04-15 2022-04-15 High-precision low-power-consumption over-temperature protection circuit

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CN114825886A true CN114825886A (en) 2022-07-29

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