CN114824040B - Semiconductor package device - Google Patents
Semiconductor package device Download PDFInfo
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- CN114824040B CN114824040B CN202210764365.6A CN202210764365A CN114824040B CN 114824040 B CN114824040 B CN 114824040B CN 202210764365 A CN202210764365 A CN 202210764365A CN 114824040 B CN114824040 B CN 114824040B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Abstract
The invention discloses a semiconductor packaging device, which relates to the field of device packaging, and comprises: the structure comprises a substrate, wherein a structure groove is formed in one side of the substrate, and two through holes are formed in the substrate; the light-emitting device comprises a device body and two electrodes arranged on the device body, the two electrodes are matched with the two through holes one by one, and the device body is arranged on the substrate through the electrodes; the packaging layer is arranged on one side, provided with the structure groove, of the substrate, the packaging layer covers the light-emitting device and the structure groove, and the packaging layer is made of fluororesin materials or spin-on glass materials. The structure groove can well enhance the binding force between the packaging layer and the substrate, and the fluororesin material or the spin-on glass material has the characteristics of high light transmission and high internal bonding energy, so that the semiconductor packaging device has wide varieties of applicable light-emitting devices and good light transmission.
Description
Technical Field
The invention relates to the field of device packaging, in particular to a semiconductor packaging device.
Background
With the gradual popularization of the development of the times, people have increasingly greater demands on the electronic devices, wherein the packaging of the electronic devices is beneficial to the storage and protection of the electronic devices and also receives great attention.
The conventional light emitting device is packaged by directly using a silica gel material, and the silica gel material is bonded on the substrate after the silica gel is cured, so that the light emitting device is effectively protected, but the ultraviolet device, especially the deep ultraviolet device, cannot be packaged by using the conventional silica gel material due to high photon energy, so that sapphire and quartz glass are frequently used as an optical transmission material for device packaging when the ultraviolet device is packaged. However, quartz sapphire materials are high-temperature preparation materials, so that the quartz sapphire materials can only be prepared and then used in a packaging process, but cannot be cured in the process preparation process like an organic silica gel material, an air dielectric layer exists between an optical light-transmitting material and a light-emitting device, the light extraction efficiency is very low in the packaging mode due to the difference of refractive indexes between the light-emitting device and air and between the light-transmitting material and the light-emitting device, and a large amount of light cannot be emitted to the outside of the packaging device.
Disclosure of Invention
The invention mainly aims to provide a semiconductor packaging device, aiming at better packaging the device and improving the light extraction efficiency and reliability of the packaging device.
To achieve the above object, the present invention provides a semiconductor package device, including:
the structure comprises a substrate, wherein a structure groove is formed in one side of the substrate, and two through holes are formed in the substrate;
the light-emitting device comprises a device body and two electrodes arranged on the device body, the two electrodes are matched with the two through holes one by one, and the device body is arranged on the substrate through the electrodes;
the packaging layer is arranged on one side, provided with the structural groove, of the substrate, covers the light-emitting device and the structural groove, and is made of a fluororesin material or a spin-on glass material;
the high-reflection layer is arranged on one side, provided with the structure groove, of the substrate, the high-reflection layer is provided with two openings, one of the openings is matched with the structure groove, the other opening is matched with the two electrodes, the packaging layer is connected with the substrate through the openings, and part of the packaging layer is located in the structure groove.
Optionally, the structural groove includes a first groove disposed along a circumferential direction of the device body, and the first groove is recessed in a direction away from the encapsulation layer.
Optionally, the first groove includes a first region and a second region penetrating through the substrate surface, the second region is communicated with the first region, and the second region is used for preventing the encapsulation layer from being pulled out from the first region.
Optionally, the first region and the second region form an inverted T shape, a square shape, an arrow shape, or an inverted F shape on a longitudinal section in the thickness direction of the substrate.
Optionally, the first region is disposed at an included angle with the substrate surface, and the included angle ranges from greater than 30 ° to less than 60 °.
Optionally, the number of the first grooves is one or more, and when the number of the first grooves is more than one, the plurality of first grooves are arranged along the circumferential direction of the light emitting device; when the number of the first grooves is single, the single first groove is formed along the circumferential direction of the light-emitting device.
Optionally, the structure groove further includes a second groove, the second groove is located between the two through holes, and the second groove is filled with the encapsulation layer.
Optionally, a rough structure is arranged on the substrate, the rough structure is located inside the first groove, the rough structure includes a plurality of grooves, and the grooves are used for increasing the contact area between the packaging layer and the first groove.
Optionally, an empty region is arranged on the high-reflection layer, the empty region is arranged in a ring shape, the empty region is arranged along the circumferential direction of the structural groove, and the packaging layer is fixed to the surface of the substrate through the empty region.
In the technical scheme of the invention, firstly, a structural groove and two through holes are arranged on one side of a substrate, then two electrodes of a light-emitting device are matched with the through holes one by one, and finally, a packaging layer covers the light-emitting device and enters the structural groove.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a semiconductor package device according to an embodiment of the present invention;
FIG. 2 is an enlarged view of a portion of one embodiment of a semiconductor package device of FIG. 1;
FIG. 3 is an enlarged view of a portion A of FIG. 1 of another embodiment of the semiconductor package of the present invention;
fig. 4 is a schematic structural view of another embodiment of a semiconductor package device of the present invention;
fig. 5 is a top view of a semiconductor package device of the present invention;
FIG. 6 is a schematic diagram of a semiconductor package device according to the present invention;
FIG. 7 is a schematic diagram of an inverted T-shaped structure of a semiconductor package device according to the present invention;
FIG. 8 is a schematic view of a semiconductor package device according to the present invention;
fig. 9 is a schematic view of an arrow-shaped structure of a semiconductor package device according to the present invention;
FIG. 10 is a schematic view of a semiconductor package device of the present invention in a soil-bending configuration;
FIG. 11 is a schematic view of a slanting earth type structure of the semiconductor package device of the present invention;
FIG. 12 is an enlarged view of a portion B of FIG. 11 in accordance with the present invention;
fig. 13 is a schematic view of an inverted F structure of the semiconductor package device of the present invention.
The reference numbers illustrate:
| reference numerals | Name(s) | Reference numerals | Name (R) |
| 1000 | |
2000 | |
| 3000 | |
4000 | |
| 1100 | |
1200 | Through |
| 2100 | Electrode for |
2200 | |
| 1110 | The |
1120 | |
| 1111 | |
1112 | |
| 1113 | |
4100 | Vacant area |
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that, if directional indications (such as up, down, left, right, front, back, 8230; etc.) are involved in the embodiment of the present invention, the directional indications are only used for explaining the relative positional relationship between the components, the motion situation, etc. in a specific posture (as shown in the figure), and if the specific posture is changed, the directional indications are correspondingly changed.
In addition, if there is a description of "first", "second", etc. in an embodiment of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between the embodiments may be combined with each other, but must be based on the realization of the technical solutions by a person skilled in the art, and when the technical solutions are contradictory to each other or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
The conventional package of the light emitting device 2000 directly uses a silicone material, and the silicone material is bonded to the substrate 1000 after curing, thereby effectively protecting the light emitting device 2000.
However, because the ultraviolet device, especially the deep ultraviolet device, can not be packaged by using a conventional silica gel material due to its high photon energy, sapphire and quartz glass are often used as the optically transparent material for packaging the ultraviolet device. However, quartz sapphire materials are high-temperature preparation materials, so that the quartz sapphire materials can only be prepared and then used in a packaging process, but can not be cured in the process preparation process like an organic silica gel material, so that the optical transmission material is completely attached to the surface of a device.
The light cannot be completely attached to the surface of the device, an air layer is arranged between the optical transmission material and the device, the ultraviolet light in the device enters the air layer, the light is reflected back to the inside of the device due to the difference of refractive indexes, and the light extraction efficiency is low.
A semiconductor package device invented for the above reasons, with reference to fig. 1 and 4, includes: the structure comprises a substrate 1000, wherein a structure groove 1100 is formed in one side of the substrate 1000, and two through holes 1200 are formed in the substrate 1000; a light emitting device 2000 including a device body 2200 and two electrodes 2100 disposed on the device body 2200, the two electrodes 2100 being fitted to the two through holes 1200 one by one, and the device body 2200 being disposed on the substrate 1000 through the electrodes 2100; the packaging layer 3000 is arranged on one side of the substrate 1000, which is provided with the structural groove 1100, the packaging layer 3000 covers the light-emitting device 2000 and the structural groove 1100, and the packaging layer 3000 is made of a fluororesin material or a spin-on glass material; the high-reflection layer 4000 is arranged on one side of the substrate 1000, where the structure groove 1100 is arranged, the high-reflection layer 4000 is provided with two openings, one of the openings is matched with the structure groove 1100, the other opening is matched with the two electrodes 2100, the packaging layer 3000 is connected with the substrate 1000 through the openings, and part of the packaging layer 3000 is located in the structure groove 1100.
It should be noted that the two through holes 1200 on the substrate 1000 are generally through holes 1200 vertically penetrating through the substrate 1000, and are generally large away from the light emitting device 2000 side and relatively small near the light emitting device 2000 side, such an arrangement can ensure more accurate positioning of the two electrodes 2100 disposed on the light emitting device 2000, and can also facilitate threading of a wire with the help of the relatively large through holes 1200. The light emitting device 2000 may be deep ultraviolet light emitting high energy, or may be a general light emitting device 2000, and although the general light emitting device 2000 may be normally used in a normal package, such an arrangement can increase a bonding force thereof. The selection of the encapsulation layer 3000 needs to have the characteristics of being not easy to damage the structure under high energy and good light transmission, and through tests and selection, the internal bond energy of two materials, namely, fluorine resin material or spin-on glass material, is very high, and the two materials have high light transmission, so that the two materials can be basically well applied to the device. The high-reflection layer 4000 can be made of high-reflection materials such as aluminum, gold, titanium dioxide, polytetrafluoroethylene and the like, the thickness of the reflection material layer is generally 20 to 100um, and the existence of the reflection layer can further improve the light extraction efficiency of the whole device.
Based on the above description, in the present embodiment, referring to fig. 1, the encapsulation layer 3000 wraps the light emitting device 2000, and since the substrate 1000 is provided with the structural groove 1100, the encapsulation layer 3000 does not only stay on the surface of the substrate 1000, but also enters the structural groove 1100, and due to the structural groove 1100, the area of the substrate 1000 and the encapsulation layer 3000 can be increased, so that the effect of increasing the bonding force between the encapsulation layer 3000 and the substrate 1000 can be achieved to a certain extent. And the light emitting device 2000 emits energy when the device is normally used, and the material of the encapsulation layer 3000 in the structural groove 1100 tends to expand due to the increase of temperature, so that the bonding force of the encapsulation layer 3000 to the groove wall of the structural groove 1100 can be increased, and the bonding force of the encapsulation layer 3000 to the substrate 1000 can be further increased.
The material used by the device is a fluororesin material or a silicon-glass bonding structure material, and the two materials have the characteristics of high internal bond energy and good light transmission, so that the situation that the material is degraded and denatured due to the influence of high-energy ultraviolet photons and the chemical bond of the material is broken in the application of a deep ultraviolet device, the reliability and the ultraviolet transmission are reduced is avoided, and other light sources with low energy cannot influence the packaging layer 3000, so that the device can be applied to a wide range, can be basically applied to various types of light-emitting devices 2000, and further has the characteristic of good light transmission, so that the device can emit a great amount of light outwards.
Based on the above embodiment, further, referring to fig. 1 to 3, the structural trench 1100 includes a first groove 1110 disposed along the circumferential direction of the device body 2200, and the first groove 1110 is recessed in a direction away from the encapsulation layer 3000. The most important role of the encapsulation layer 3000 is to protect the light emitting device 2000 and to be combined with the substrate 1000. In practice, the performance of the whole device is often greatly reduced due to the fact that the encapsulation layer 3000 falls off in a part of the direction of the light-emitting device 2000, and the first groove 1110 is arranged along the circumference of the device body 2200, so that the light-emitting device 2000 has similar bonding force in all external directions, and thus the situation that the encapsulation layer 3000 falls off in a part of the direction of the light-emitting device 2000 is not caused. In order to complete the solution, the present invention sets a design distance that is preferable in practice, the distance from the first groove 1110 to the center of the light emitting device 2000 should be greater than half of the outermost circle of the encapsulation layer 3000, and further, the distance from the first groove 1110 to the center of the light emitting device 2000 is selected to be 5/7 of the radius of the encapsulation layer 3000, so that the first groove 1110 is located near the edge of the encapsulation layer 3000, and in practice, the bonding force between the encapsulation layer 3000 and the substrate 1000 is preferable. It should be noted that other values not set forth in this patent are also within the scope of this patent.
Based on the above embodiment, further, referring to fig. 1 to 13, the first groove 1110 includes a first region 1111 and a second region 1112 penetrating through the surface of the substrate 1000, the second region 1112 is communicated with the first region 1111, and the second region 1112 is used for preventing the encapsulation layer 3000 from coming out of the first region 1111. The method for preventing the encapsulation layer 3000 from coming out of the first region 1111 by the second region 1112 includes, but is not limited to, making the cross-sectional area of the second region 1112 in the thickness direction of the substrate 1000 larger than that of the first region 1111 in the thickness direction of the substrate 1000, or arranging the second region 1112 and the first region 1111 in an offset manner in the thickness direction of the substrate 1000.
Based on the above description, when the liquid material of the encapsulation layer 3000 enters the first region 1111, the second region 1112 is also smoothly filled because the second region 1112 is communicated with the first region 1111, and when the second region 1112 is filled with the material of the encapsulation layer 3000, the material of the encapsulation layer 3000 is not easily separated from the substrate 1000, thereby enhancing the bonding force between the encapsulation layer 3000 and the substrate 1000.
Based on the above embodiments, further, referring to fig. 7 to 13, the first region 1111 and the second region 1112 form an inverted T shape, a letter shape, an arrow shape, or an inverted F shape in a longitudinal section in a thickness direction of the substrate 1000. Although the above-described structure shape enables the second region 1112 to prevent the encapsulation layer 3000 from coming off the first region 1111, the effect and cost are different in each case, for example, the inverted T shape provides a bonding force not higher than the earth shape compared to the earth shape, but the inverted T shape has a lower cost than the earth shape, and the arrow shape, the inverted F shape, or other shapes provide a balance point between the effect and the cost, and the first region 1111 and the second region 1112 are more complicated to be shaped if the bonding force is increased a little, and are simpler to be arranged if the bonding force is not excessively increased in the device.
Further, some basic calculations and designs in the first groove 1110 of the inverted T-shape are provided, the first groove 1110 surrounds the light emitting device 2000, the width d1 of the first region 1111 is greater than 20um and less than 200um, the hole channel smaller than 20um is too thin, so that the filling of the packaging layer 3000 is difficult, and the first region 1111 is too wide and easily causes more light rays to enter the groove to be emitted out under the condition of being greater than 200um, so that the light extraction efficiency is reduced. The depth d2 inside the first groove 1110 is greater than 1/10 of the thickness of the substrate 1000, less than 1/2 of the thickness of the substrate 1000, too shallow a thickness less than 1/10 of the thickness does not provide a good bonding effect, and too deep a thickness greater than 1/2 affects the reliability of the substrate 1000. The width d3, d3 is greater than or equal to 1.5d1 and less than or equal to 3d1 at the bottom of the second region 1112, which is too small to provide a good bonding effect, and too large to complete a good internal filling of the encapsulation layer 3000, which also affects the bonding effect.
Based on the above embodiment, as shown in fig. 11 and 12, further, the first region 1111 is disposed at an angle with respect to the surface of the substrate 1000, and the angle θ is in a range of greater than 30 ° and less than 60 °. If the angle is less than 30 degrees, the angle is too small, which is not favorable for the inward filling of the fluororesin and affects the effect of enhancing the bonding force, and if the angle is more than 60 degrees, the effect of enhancing the light extraction efficiency cannot be achieved. The purpose of the inclined angle is that when the device is vertically disposed, part of the ultraviolet light entering the first groove 1110 cannot exit, which results in a decrease in the light extraction efficiency of the whole device. The probability of light incidence is reduced by inclining the light source inwards, and the light extraction efficiency of the device is improved.
Based on the above embodiment, as shown in fig. 13, further, the second region 1112 is only disposed on the side of the first region 1111 close to the light emitting device 2000, and after the light emitted by the light emitting device 2000 enters the second region 1112 along the first region 1111, the light is difficult to reflect. It is known that the second region 1112 is provided only on the side of the first region 1111 close to the light emitting device 2000, and the influence of the grooves on light absorption can be further reduced, thereby improving the device light extraction efficiency.
Based on the above embodiment, further, the number of the first grooves 1110 is single or plural, and when the number of the first grooves 1110 is plural, the plural first grooves 1110 are arranged along the circumferential direction of the light emitting device 2000; when the number of the first grooves 1110 is single, the single first groove 1110 is formed along the circumferential direction of the light emitting device 2000. Based on the above description, the greater the number of the first grooves 1110, the stronger the bonding force between the encapsulation layer 3000 and the substrate 1000, and certainly the higher the corresponding cost and consumables, the most suitable scheme may be selected according to the state of the substrate 1000 and the energy of the light emitting device 2000.
Based on the above embodiment, as shown in fig. 6, further, the structural trench 1100 further includes a second recess 1120, the second recess 1120 is located between two of the through holes 1200, and the second recess 1120 is filled with the encapsulation layer 3000. The width of the second recess 1120 is 1/3d5 ≤ d4 < d5, which is too small to provide good bonding force and good underfill effect, and is too large to cause poor electrical connection of the filled device. The underfill encapsulant 3000 may also provide better contact between the encapsulant 3000 and the light emitting device 2000 to improve light extraction efficiency. The provision of the second recess 1120 between the two electrodes 2100 may cause a portion of the encapsulation layer 3000 to be wrapped between the light emitting device 2000 and the substrate 1000, and in the case where the light emitting device 2000 is connected to the outside, since the light emitting device 2000 is applied with a force in the direction of the substrate 1000 and a portion of the encapsulation layer 3000 is wrapped between the light emitting device 2000 and the substrate 1000, the encapsulation layer 3000 is very difficult to be peeled off. The arrangement of the first groove 1110 and the second groove 1120 not only greatly enhances the bonding force between the package layer 3000 and the substrate 1000, but also enhances the adhesion between the chip and the bottom, so that part of light can be transmitted out when entering the lower part of the chip.
Based on the above embodiment, as shown in fig. 2 and fig. 3, further, a rough structure 1113 is disposed on the substrate 1000, the rough structure 1113 is located inside the first groove 1110, and the rough structure 1113 includes a plurality of grooves, and the plurality of grooves are used to increase a contact area between the encapsulation layer 3000 and the first groove 1110. The groove bodies can be regularly arranged or irregularly arranged, and can be arranged at one place or a plurality of places. The increased contact area between the encapsulation layer 3000 and the first groove 1110 also means that the bonding force between the encapsulation layer 3000 and the substrate 1000 is increased, further enhancing the bonding force.
Based on the above embodiment, as shown in fig. 7, further, an empty region 4100 is disposed on the high reflection layer 4000, the empty region 4100 is disposed in a circular ring shape, the empty region 4100 is disposed outside the structural groove 1100 along the circumferential direction of the structural groove 1100, and the encapsulation layer 3000 is fixed to the surface of the substrate 1000 via the empty region 4100. The empty region 4100 may be one or more. The vacant regions 4100 are used for enhancing the edge bonding force, and the width of d7 is larger than 100um and smaller than 200um, so that the vacant regions are too small to form the effect of enhancing the bonding force, and the vacant regions are too large to reduce the light extraction efficiency. The outer edge of the vacant region 4100 is disposed at the edge of the encapsulation layer 3000 to limit the encapsulation layer 3000 to be molded on the surface of the substrate 1000, so that the encapsulation layer 3000 can have a smooth edge in the design region to form a regular molding, and the regular molding is controlled to further improve the light extraction efficiency of the whole device.
The above description is only an alternative embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (6)
1. A semiconductor package device, comprising:
the structure comprises a substrate, wherein a structure groove is formed in one side of the substrate, and two through holes are formed in the substrate;
the light-emitting device comprises a device body and two electrodes arranged on the device body, the two electrodes are matched with the two through holes one by one, and the device body is arranged on the substrate through the electrodes;
the packaging layer is arranged on one side, provided with the structural groove, of the substrate, covers the light-emitting device and the structural groove, and is made of a fluororesin material or a spin-on glass material;
the high-reflection layer is arranged on one side, provided with the structure groove, of the substrate, the high-reflection layer is provided with two openings, one opening is matched with the structure groove, the other opening is matched with the two electrodes, the packaging layer is connected with the substrate through the openings, and part of the packaging layer is located in the structure groove;
the structural groove comprises a first groove arranged along the circumferential direction of the device body, and the first groove is sunken towards the direction away from the packaging layer;
the first groove comprises a first area and a second area which penetrate through the surface of the substrate, the second area is communicated with the first area, and the second area is used for preventing the packaging layer from being pulled out of the first area;
the first region and the substrate surface form an included angle, and the included angle is larger than 30 degrees and smaller than 60 degrees.
2. The semiconductor package device according to claim 1, wherein the first region and the second region constitute an inverted T shape, a letter shape, an arrow shape, or an inverted F shape in a longitudinal section in a thickness direction of the substrate.
3. The semiconductor package device according to claim 1, wherein the number of the first grooves is one or more, and when the number of the first grooves is more than one, the plurality of first grooves are arranged along a circumferential direction of the light emitting device; when the number of the first grooves is single, the single first groove is formed along the circumferential direction of the light-emitting device.
4. The semiconductor package device of claim 1, wherein the substrate is provided with a roughness structure, the roughness structure is located inside the first groove, the roughness structure comprises a plurality of grooves, and the plurality of grooves are used for increasing the contact area between the packaging layer and the first groove.
5. The semiconductor package device of claim 1, wherein the structural trench further comprises a second recess, and the second recess is located between two of the vias, the second recess being filled with the encapsulation layer.
6. The semiconductor package device of claim 1, wherein a dummy area is disposed on the high reflection layer, the dummy area is a ring-shaped area, the dummy area is disposed along a circumferential direction of the structural groove, and the package layer is fixed to the surface of the substrate via the dummy area.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210764365.6A CN114824040B (en) | 2022-07-01 | 2022-07-01 | Semiconductor package device |
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| CN202210764365.6A CN114824040B (en) | 2022-07-01 | 2022-07-01 | Semiconductor package device |
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| CN114824040A CN114824040A (en) | 2022-07-29 |
| CN114824040B true CN114824040B (en) | 2022-11-08 |
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| JP3784976B2 (en) * | 1998-12-22 | 2006-06-14 | ローム株式会社 | Semiconductor device |
| JP2005210057A (en) * | 2003-12-24 | 2005-08-04 | Kyocera Corp | Luminous element accommodating package, light emitting device and lighting system |
| JP2005347401A (en) * | 2004-06-01 | 2005-12-15 | Meiko:Kk | Optical element chip component |
| JP4822980B2 (en) * | 2006-08-11 | 2011-11-24 | 京セラ株式会社 | Electronic component mounting substrate, electronic device, and method of manufacturing electronic device |
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| CN106449937B (en) * | 2009-10-29 | 2020-11-03 | 日亚化学工业株式会社 | Light emitting device and method for manufacturing the same |
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