CN114823489A - Method for forming metal wire or metal piece - Google Patents

Method for forming metal wire or metal piece Download PDF

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Publication number
CN114823489A
CN114823489A CN202110113750.XA CN202110113750A CN114823489A CN 114823489 A CN114823489 A CN 114823489A CN 202110113750 A CN202110113750 A CN 202110113750A CN 114823489 A CN114823489 A CN 114823489A
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China
Prior art keywords
metal
thickness
insulating layer
wire
initial thickness
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CN202110113750.XA
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Chinese (zh)
Inventor
金泰源
张月
杨涛
卢一泓
田光辉
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Institute of Microelectronics of CAS
Zhenxin Beijing Semiconductor Co Ltd
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Institute of Microelectronics of CAS
Zhenxin Beijing Semiconductor Co Ltd
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Application filed by Institute of Microelectronics of CAS, Zhenxin Beijing Semiconductor Co Ltd filed Critical Institute of Microelectronics of CAS
Priority to CN202110113750.XA priority Critical patent/CN114823489A/en
Publication of CN114823489A publication Critical patent/CN114823489A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76819—Smoothing of the dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76865—Selective removal of parts of the layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H01L23/5283—Cross-sectional geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials

Abstract

The invention relates to a method for forming a metal wire or a metal piece, belongs to the field of semiconductor manufacturing, and is used for removing defects in the metal wire or the metal piece prepared in the prior art. The method comprises the following steps: providing a substrate, and depositing an insulating layer with an initial thickness on the substrate; forming a metal through hole in the insulating layer of the initial thickness; forming a metal wire or a metal piece in the metal through hole, wherein the height of the metal wire or the metal piece is larger than the insulating layer with the initial thickness; removing the metal wire or the metal piece and the insulating layer with the initial thickness for the first time to the top surface or below the top surface of the insulating layer with the initial thickness to obtain the insulating layer with the first thickness; etching the insulating layer with the first thickness to obtain an insulating layer with a second thickness, wherein the second thickness is smaller than the first thickness; and carrying out secondary removal treatment on the metal wire or the metal piece and the insulating layer with the second thickness. The invention can effectively improve the forming quality of the metal wire or the metal piece.

Description

Method for forming metal wire or metal piece
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a metal wire or a metal piece.
Background
Metallization is to deposit a metal film on the surface of the device, the metal layer conducts signals in the integrated circuit, and the dielectric layer ensures that the signals are not affected by adjacent metal lines. The metal layers include interconnects, contacts, vias, and the like. Interconnection refers to a metal connection line made of materials such as aluminum, polysilicon or copper and used for mutually transmitting electric signals among different devices; the contact is a connection between a device in the chip and the first layer of metal; the through hole is an opening which penetrates through the dielectric layer and plays a role in conducting between the two layers of metal.
CMP (Chemical-Mechanical Planarization) is a surface global Planarization technique that planarizes a surface of a silicon wafer by relative movement between the silicon wafer and a grinding head with a grinding fluid while applying pressure. Chemical mechanical planarization achieves a uniform silicon wafer surface by removing high features at a faster rate than low features. It has become one of the most widely used techniques because of its ability to precisely and uniformly planarize silicon wafers to a desired thickness and flatness.
Conventional chemical mechanical planarization processes include: step 1, removing materials; and 2, cleaning and drying. In some cases, when the metal lines are tightly connected together, the material thickness is reduced to a higher degree at the center of the pattern than at the edge during chemical mechanical planarization, and dishing occurs. In addition, after the metal layer is formed, in the subsequent heat treatment process, the metal is subject to the action of gravity, so that gaps or cavities are easy to appear on the upper portion of the metal wire or the metal part, as shown in fig. 1, and these defects become traps for capturing chemical substances used in the subsequent process, so that the metal is lost, as shown in fig. 2, so that the resistance of the metal wire or the metal part is abnormal, and the device performance is affected. Therefore, the invention provides a method for removing a metal wire or a metal piece, which can better remove the defects in the metal wire or the metal layer, reduce particles on the surface of the metal and improve the forming quality of the metal wire or the metal piece.
Disclosure of Invention
In view of the foregoing analysis, embodiments of the present invention are directed to a method for forming a metal wire or a metal part, so as to remove defects in the metal wire or the metal part prepared by the prior art.
The invention provides a method for forming a metal wire or a metal piece, which comprises the following steps: providing a substrate, and depositing an insulating layer with an initial thickness on the substrate; forming a metal through hole in the insulating layer of the initial thickness; forming a metal wire or metal piece in the metal through hole, wherein the height of the metal wire or metal piece is larger than the insulating layer with the initial thickness; carrying out first removal treatment on the metal wire or the metal piece to the top surface of the insulating layer with the initial thickness, or carrying out first removal treatment on the metal wire or the metal piece and the insulating layer with the initial thickness to the position below the top surface of the insulating layer with the initial thickness to obtain the insulating layer with the first thickness, wherein the height of the metal wire or the metal piece after the first removal treatment is the same as that of the insulating layer with the first thickness; etching the insulating layer with the first thickness to obtain an insulating layer with a second thickness, wherein the second thickness is smaller than the first thickness; and carrying out secondary removal treatment on the metal wire or the metal piece and the insulating layer with the second thickness.
Further, forming a metal via in the insulating layer of the initial thickness, comprising:
forming a photoresist layer on the insulating layer of the initial thickness; and photoetching and etching the photoresist layer and the insulating layer with the initial thickness to the surface of the substrate, removing the photoresist layer, and forming a metal through hole in the insulating layer with the initial thickness.
Further, forming a metal line or metal piece in the metal via, the metal line or metal piece having a height greater than the insulating layer of the initial thickness, comprising: forming a barrier layer on the inner wall of the metal through hole; and forming a metal wire or metal piece on the barrier layer, wherein the height of the metal wire or metal piece is larger than the insulating layer with the initial thickness.
Further, the insulating layer material is one of an oxide, a nitride, a low-k material, and a polymer.
Further, the material of the metal wire or the metal member is one of tungsten, copper, titanium nitride and aluminum.
Further, the first removing treatment of the metal wire or metal piece and the insulating layer with the initial thickness is first dry etching or first chemical mechanical planarization.
Further, the etching treatment of the insulating layer with the first thickness is second dry etching or first wet etching.
Further, the second removing treatment of the metal wire or the metal piece and the insulating layer with the second thickness adopts third dry etching.
Further, the second removing treatment of the metal wire or metal piece and the insulating layer with the second thickness adopts second chemical mechanical planarization.
Further, in the first chemical mechanical planarization, the selection ratio of the metal wire or metal member to the insulating layer of the initial thickness is 10:1 or more.
Further, forming a metal wire or metal member in the metal through hole, wherein the height of the metal wire or metal member is larger than the insulating layer with the initial thickness, and a defect is generated in the metal wire or metal member in the opening area of the metal through hole.
And further, etching the insulating layer with the first thickness to obtain an insulating layer with a second thickness, wherein the lower removing limit of the etching is not higher than the lowest defect position.
Further, the first thickness is 100 angstroms or more.
Further, the difference between the second thickness and the first thickness is at least 10 angstroms.
Further, the size of the defect is 10 angstroms or more.
Compared with the prior art, the invention can realize at least one of the following beneficial effects:
1. the thickness of the initial insulating layer is increased (the thickness of the initial insulating layer is larger than that of a target product), so that the position of the defect in the metal wire or the metal piece is increased, the target thickness of the metal wire or the metal piece can be ensured in the process of treating the metal wire or the metal piece, the quality of the metal wire or the metal piece can be improved, and the problem of abnormal resistance caused by the metal defect is particularly solved;
2. in the process of removing the defects in the metal wire or the metal piece, the method comprises the steps of removing the insulating layer area with the first thickness around the metal wire or the metal piece to be below the defects, and removing the metal wire or the metal piece area with the defects, wherein the defect removal accuracy can be improved through step-by-step removal;
3. the first insulating layer area around the metal wire or the metal piece is removed by adopting the second dry etching or the first wet etching until the number of the particles is below the defect, so that the number of the particles can be effectively reduced;
4. and the defective metal wire or metal part area is removed by adopting third dry etching or second chemical mechanical planarization, so that the probability of generating particles can be effectively reduced.
In the invention, the technical schemes can be combined with each other to realize more preferable combination schemes. Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and drawings.
Drawings
The drawings are only for purposes of illustrating particular embodiments and are not to be construed as limiting the invention, wherein like reference numerals are used to designate like parts throughout.
FIG. 1 is a view of a metal void as found in the prior art;
FIG. 2 is a cross-sectional view of a metal deletion as found in the prior art;
FIG. 3 is a cross-sectional view of a wire or metal piece;
FIG. 4 is a cross-sectional view of a metal wire or metal piece and an initial thickness of an insulation layer after a first removal process;
FIG. 5 is a cross-sectional view of an insulating layer of a first thickness after an etching process;
FIG. 6 is a cross-sectional view of a second removal process performed on the metal wire or metal piece and a second thickness of the insulating layer;
FIG. 7 is a flow chart of the process of the present invention.
Reference numerals:
1-an insulating layer of initial thickness; 2-a metal wire or piece; 3-defect; 4-an insulating layer of a first thickness; 5-an insulating layer of a second thickness.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is illustrative only and is not intended to limit the scope of the present disclosure. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
Various structural schematics according to embodiments of the present disclosure are shown in the figures. The figures are not drawn to scale, wherein certain details are exaggerated and possibly omitted for clarity of presentation. The shapes of various regions, layers, and relative sizes and positional relationships therebetween shown in the drawings are merely exemplary, and deviations may occur in practice due to manufacturing tolerances or technical limitations, and a person skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions, as actually required.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present. In addition, if a layer/element is "on" another layer/element in one orientation, then that layer/element may be "under" the other layer/element when the orientation is reversed.
The invention provides a method for forming a metal wire or a metal piece, which is described with reference to the accompanying drawings and comprises the following steps:
providing a substrate, depositing an insulating layer 1 with an initial thickness on the substrate, and forming a metal through hole;
illustratively, a chemical vapor deposition process may be adopted to deposit an insulating layer on a substrate, perform chemical mechanical planarization on the insulating layer to obtain an insulating layer 1 with an initial thickness, which may be 4000-6000 angstroms, and sequentially perform cleaning and drying on a silicon wafer to remove particles introduced in the planarization process.
Then, the metal via is prepared. Forming a photoresist layer on the insulating layer 1 with the initial thickness, photoetching and etching the photoresist layer and the insulating layer 1 with the initial thickness, etching to the surface of the substrate, removing the photoresist layer, and forming a metal through hole in the insulating layer 1 with the initial thickness, wherein the metal through hole with the diameter of 0.08-0.15 um and the depth of 4000-6000 angstroms can be etched by way of example.
Forming a metal wire or metal piece 2 in the metal through hole, wherein the height of the metal wire or metal piece 2 is larger than the insulating layer 1 with the initial thickness;
illustratively, a barrier layer of tantalum or titanium may be deposited on the inner wall of the metal via by physical vapor deposition, and then a metal is deposited on the barrier layer and the insulating layer 1 of initial thickness by chemical vapor deposition, and the metal via is filled with the metal to form a metal wire or metal piece 2, as shown in fig. 3.
Performing first removal processing on a metal wire or metal piece 2 and an insulating layer 1 with an initial thickness to the top surface or below the top surface of the insulating layer 1 with the initial thickness, namely performing first removal processing on the metal wire or metal piece 2 to the top surface of the insulating layer 1 with the initial thickness, or performing first removal processing on the metal wire or metal piece 2 and the insulating layer 1 with the initial thickness to the position below the top surface of the insulating layer 1 with the initial thickness, so as to obtain an insulating layer 4 with a first thickness, wherein the height of the metal wire or metal piece 2 after the first removal processing is the same as that of the insulating layer 4 with the first thickness, and a defect 3 is generated in the metal wire or metal piece 2 in the opening area of a metal through hole;
illustratively, the metal wire or metal piece 2 and the insulating layer 1 of the initial thickness may be subjected to a removal process using a first chemical mechanical planarization process or a first dry etching process. If a first chemical mechanical planarization process is used,the selection ratio of the metal wire or metal piece 2 to the insulating layer 1 with the initial thickness is 50:1, the pressure of a grinding head for chemical mechanical planarization is 35-40 KPa, the rotating speed of a turntable is 60-80 rpm, and the abrasive particles are Al 2 O 3 Or Mn 2 O 3 The pH value of the grinding liquid can be 2-6, and the polishing time can be 5-10 min. If dry etching is adopted, the etching rate can be 1000-1500 nm/min, and the etching gas can be NF 3 Or SF 6 The etching time can be 15-30 s, and the insulating layer 4 with the first thickness is obtained, wherein a defect 3 is generated in the metal wire or the metal piece 2 in the opening region of the metal through hole, as shown in fig. 4.
Etching the insulating layer 4 with the first thickness to obtain an insulating layer 5 with a second thickness, wherein the second thickness is smaller than the first thickness;
illustratively, the etching method is dry etching or wet etching, if dry etching is adopted, the etching rate can be 500-750 nm/min, and the etching gas can be CF 4 Or NF 3 The etching time can be 30-60 s. If wet etching is adopted, the etching solution can be HF, the etching time can be 5-10 s, and the selection ratio range in the etching can be 120: 1-150: 1. As shown in fig. 5, after etching, the height of the resulting metal line or metal piece 2 is greater than the height of the insulating layer 5 of the second thickness.
And carrying out secondary removal treatment on the metal wire or metal piece 2 and the insulating layer 5 with the second thickness.
Illustratively, the metal line or metal piece 2 and the insulating layer 5 of the second thickness are removed using dry etching or chemical mechanical planarization. If dry etching is adopted, firstly, the structure of the metal wire or the metal piece 2 and the insulating layer 5 with the second thickness is etched in the photoetching area by utilizing the deep ultraviolet photoetching technology, then, the metal wire or the metal piece 2 and the insulating layer 5 with the second thickness are etched, the etching rate can be 1000-1500 nm/min in the etching process, and the etching gas can be NF 3 Or SF 6 The etching time can be 15-45 s. If chemical mechanical planarization is adopted, the grinding head pressure for chemical mechanical planarization can be 35-40 KPa, the rotating speed of the rotating disc can be 60-80 rpm, and the abrasive particles can be Al 2 O 3 Or Mn 2 O 3 Polishing the slurry at a pH of 2 to 6The time can be 5-10 min, after the etching is completed, the defect 3 in the area of the metal wire or metal piece 2 is removed, and the height of the obtained metal wire or metal piece 2 is the same as the thickness of the insulating layer 5 with the second thickness, as shown in fig. 6.
It should be noted that, in the invention, the position of the defect 3 in the metal wire or the metal piece 2 is raised by increasing the thickness of the insulating layer 1 with the initial thickness, so that in the process of processing the metal wire or the metal piece 2, the target thickness of the metal wire or the metal piece 2 can be ensured, the quality of the metal wire or the metal piece 2 can be improved, and particularly, the problem of abnormal resistance caused by the metal defect 3 is solved; in the process of removing the defect 3 in the metal wire or metal piece 2, the area of the insulating layer 4 with the first thickness around the metal wire or metal piece 2 is removed to be below the defect 3, and the area of the metal wire or metal piece 2 with the defect 3 is removed, so that the accuracy of removing the defect 3 can be improved by removing the defect 3 step by step; removing the insulating layer 4 area with the first thickness around the metal wire or the metal piece 2 by adopting the second dry etching or the first wet etching until the defect 3 is below, so that the quantity of the particles can be effectively reduced; and the metal wire or metal part 2 area with the defect 3 is removed by adopting the third dry etching or the second chemical mechanical planarization treatment, so that the probability of generating particles can be effectively reduced.
Example 1
A method of forming a metal wire or metal piece, comprising:
providing a substrate, depositing a low-k medium with an initial thickness on the substrate, and forming a metal through hole;
specifically, a chemical vapor deposition process is adopted to deposit a low-k medium, and chemical mechanical planarization treatment is carried out on the low-k medium to obtain the low-k medium with the initial thickness of 4000 angstroms. And cleaning and drying the silicon wafer in sequence.
Then, the metal via is prepared. And forming a photoresist layer on the low-k medium with the initial thickness, photoetching and etching the photoresist layer and the low-k medium with the initial thickness to the surface of the substrate, removing the photoresist layer, and forming a metal through hole in the low-k medium with the initial thickness, wherein the diameter of the etching small hole is 0.08um, and the depth of the etching small hole is 4000 angstroms.
Forming a metal copper wire in the metal through hole, wherein the height of the metal copper wire is larger than that of the low-k medium with the initial thickness;
specifically, a tantalum barrier layer is deposited on the inner wall of the metal through hole by adopting physical vapor deposition. And then, depositing metal copper on the barrier layer and the low-k medium with the initial thickness by adopting chemical vapor deposition, and filling the through hole with the copper to form a metal copper wire.
Carrying out first removal treatment on the metal copper wire and the low-k medium with the initial thickness to the top surface or below the top surface of the low-k medium with the initial thickness, wherein a gap is generated in the metal copper wire of the opening region of the metal through hole;
specifically, the metal wire and the low-k medium with the initial thickness are subjected to removal treatment by adopting first chemical mechanical planarization, and the selection ratio of the metal copper wire to the low-k medium with the initial thickness is 50: 1. The grinding head pressure of the chemical mechanical planarization is 35KPa, the rotating speed of the turntable is 60rpm, and the abrasive particles are Al 2 O 3 The PH value of the grinding liquid is 2, the polishing time is 5min, the obtained low-k medium with the first thickness is the same as the metal copper wire in height, and gaps are generated in the metal copper wire in the opening area of the metal through hole.
Etching the low-k medium with the first thickness to obtain a low-k medium with a second thickness, wherein the second thickness is smaller than the first thickness;
specifically, the etching method is wet etching, the etching solution is HF, the etching time is 5s, and the selection ratio in the etching is 120: 1. After etching, the height of the metal copper wire is larger than the thickness of the low-k medium with the second thickness.
And carrying out secondary removal treatment on the metal copper wire and the low-k medium with the second thickness.
Specifically, in the photoetching area, a metal copper wire and a low-k medium with a second thickness are etched by utilizing a deep ultraviolet photoetching technology, the metal copper wire and the low-k medium with the second thickness are removed by adopting dry etching, the etching rate is 1000nm/min, and the etching gas is NF 3 And etching for 42s, removing the gap in the metal copper wire, wherein the height of the removed metal copper wire is the same as the thickness of the low-k medium with the second thickness.
Example 2
A method of forming a metal wire or metal piece, comprising:
providing a substrate, depositing a low-k medium with an initial thickness on the substrate, and forming a metal through hole;
specifically, a chemical vapor deposition process is adopted to deposit a low-k medium, the low-k medium is subjected to chemical mechanical planarization treatment to obtain the low-k medium with the initial thickness of 4500 angstroms, and the silicon wafer is sequentially subjected to cleaning and drying treatment.
Then, the metal via is prepared. And forming a photoresist layer on the low-k medium with the initial thickness, photoetching and etching the photoresist layer and the low-k medium with the initial thickness to the surface of the substrate, removing the photoresist layer, and forming a metal through hole in the low-k medium with the initial thickness, wherein the diameter of the etching small hole is 0.08um, and the depth of the etching small hole is 4500 angstroms.
Forming a metal copper wire in the metal through hole, wherein the height of the metal copper wire is larger than that of the low-k medium with the initial thickness;
specifically, a tantalum barrier layer is deposited on the inner wall of the metal through hole by adopting physical vapor deposition, then, metal copper is deposited on the tantalum barrier layer and the low-k medium with the initial thickness by adopting chemical vapor deposition, and the through hole is filled with the copper to form the metal copper wire.
Carrying out first removal treatment on the metal copper wire and the low-k medium with the initial thickness to the top surface or below the top surface of the low-k medium with the initial thickness, wherein a gap is generated in the metal copper wire of the opening region of the metal through hole;
specifically, photoetching and imprinting a metal copper wire and a low-k medium with an initial thickness, and carrying out first dry etching treatment on the metal copper wire and the low-k medium with the initial thickness, wherein the etching rate is 1200nm/min, and the etching gas is SF 6 And etching for 25s to obtain a low-k dielectric with the first thickness, wherein the height of the metal copper wire is the same as the thickness of the low-k dielectric with the first thickness, and a gap is generated in the metal copper wire in the opening area of the metal through hole.
Etching the low-k medium with the first thickness to obtain a low-k medium with a second thickness, wherein the second thickness is smaller than the first thickness;
specifically, a wet etching process is adopted to remove the low-k medium with the first thickness, the etching solution is HF, and the etching time is 10 s. And after etching, obtaining a low-k medium with a second thickness, wherein the height of the metal copper wire is greater than the thickness of the low-k medium with the second thickness.
And carrying out secondary removal treatment on the metal copper wire and the low-k medium with the second thickness.
Removing the metal copper wire and the low-k medium with the second thickness by adopting chemical mechanical planarization, wherein the grinding head pressure of the chemical mechanical planarization is 40KPa, the rotating speed of a rotary table is 80rpm, and the abrasive particles are Mn 2 O 3 And the PH value of the grinding liquid is 4, the polishing time is 8min, the gap in the metal copper wire area is removed, and the height of the removed metal copper wire is the same as the thickness of the low-k medium.
Example 3
A method of forming a metal wire or metal piece, comprising:
providing a substrate, depositing a low-k medium with an initial thickness on the substrate, and forming a metal through hole;
and depositing a low-k medium by adopting a chemical vapor deposition process, and carrying out chemical mechanical planarization treatment on the low-k medium to obtain the low-k medium with the initial thickness of 5000 angstroms. And cleaning and drying the silicon wafer in sequence.
Then, the metal via is prepared. And forming a photoresist layer on the low-k medium with the initial thickness, photoetching and etching the photoresist layer and the low-k medium with the initial thickness to the surface of the substrate, removing the photoresist layer, and forming a metal through hole in the low-k medium with the initial thickness, wherein the diameter of the etching small hole is 0.1um, and the depth of the etching small hole is 5000 angstroms.
Forming a metal tungsten wire in the metal through hole, wherein the height of the metal tungsten wire is larger than that of the low-k medium with the initial thickness;
specifically, a titanium barrier layer is deposited on the inner wall of the metal through hole by adopting physical vapor deposition, then, metal tungsten is deposited on the titanium barrier layer and the low-k medium with the initial thickness by adopting chemical vapor deposition, the through hole is filled with the tungsten, and a metal tungsten wire is formed, wherein the height of the metal tungsten wire is larger than that of the low-k medium with the initial thickness.
Carrying out first removal treatment on the metal tungsten wire and the low-k medium with the initial thickness to the top surface or the lower surface of the low-k medium with the initial thickness to obtain the low-k medium with the first thickness, wherein the height of the metal tungsten wire is the same as that of the low-k medium with the first thickness, and a hollow hole is generated in the metal tungsten wire in the opening region of the metal through hole;
specifically, a first chemical mechanical planarization treatment is adopted to carry out a first removal treatment on a metal tungsten wire and a low-k medium with an initial thickness, the selection ratio of the metal tungsten wire to the low-k medium with the initial thickness is 50:1, the grinding head pressure of the chemical mechanical planarization is 40KPa, the rotating speed of a rotating disc is 70rpm, and abrasive particles are Al 2 O 3 The pH value of the grinding fluid is 4, and the polishing time is 5 min. After the removing treatment, the height of the metal tungsten line is the same as the thickness of the low-k medium with the first thickness, wherein a cavity is generated in the metal tungsten line of the opening area of the metal through hole.
Etching the low-k medium with the first thickness to obtain a low-k medium with a second thickness, wherein the second thickness is smaller than the first thickness;
specifically, a dry etching process is adopted to etch the low-k medium with the first thickness, the etching rate is 600nm/min, and the etching gas is NF 3 The etching time was 40 s. And after etching, obtaining the low-k medium with the second thickness, wherein the height of the metal tungsten line is greater than the thickness of the low-k medium with the second thickness.
And carrying out secondary removal treatment on the metal tungsten wire and the low-k medium with the second thickness.
Specifically, in the photoetching area, a metal tungsten wire and a low-k medium structure with a second thickness are etched by utilizing a deep ultraviolet photoetching technology. Removing the metal tungsten wire and the low-k medium with the second thickness by adopting dry etching, wherein the etching rate is 1300nm/min, and the etching gas is NF 3 And the etching time is 15s, the hollow in the metal tungsten line region is removed, and the height of the removed metal tungsten line is the same as the thickness of the low-k medium with the second thickness.
Example 4
A method of forming a metal wire or metal piece, comprising:
providing a substrate, depositing a low-k medium with an initial thickness on the substrate, and forming a metal through hole;
specifically, a chemical vapor deposition process is adopted to deposit a low-k medium, and chemical mechanical planarization treatment is carried out on the low-k medium to obtain the low-k medium with the initial thickness of 5000 angstroms. And cleaning and drying the silicon wafer in sequence.
Then, the metal via is prepared. And forming a photoresist layer on the low-k medium with the initial thickness, photoetching and etching the photoresist layer and the low-k medium with the initial thickness to the surface of the substrate, removing the photoresist layer, and forming a metal through hole in the low-k medium with the initial thickness, wherein the diameter of the etching small hole is 0.12um, and the depth of the etching small hole is 5000 angstroms.
Forming a metal tungsten wire in the metal through hole, wherein the height of the metal tungsten wire is larger than that of the low-k medium with the initial thickness;
and depositing a tantalum barrier layer on the inner wall of the metal through hole by adopting physical vapor deposition. And then, depositing metal tungsten on the tantalum barrier layer and the low-k medium with the initial thickness by adopting chemical vapor deposition, and filling the through hole with the tungsten to obtain a metal tungsten wire, wherein the height of the metal tungsten wire is greater than that of the low-k medium with the initial thickness.
Removing the metal tungsten wire and the low-k medium with the initial thickness for the first time to the top surface or below the top surface of the low-k medium with the initial thickness to obtain the low-k medium with the first thickness, wherein the height of the metal tungsten wire is the same as that of the low-k medium with the first thickness, and a gap is generated in the metal tungsten wire in the opening region of the metal through hole;
specifically, a first dry etching treatment is adopted to remove the metal tungsten wire and the low-k medium with the initial thickness, the etching rate is 1000nm/min, and the etching gas is NF 3 And etching for 21s to obtain the metal tungsten wire and the low-k medium with the first thickness, wherein the height of the metal tungsten wire is the same as the thickness of the low-k medium with the first thickness.
Etching the low-k medium with the first thickness to obtain a low-k medium with a second thickness, wherein the second thickness is smaller than the first thickness;
specifically, the low-k medium with the first thickness is removed by wet etching, the etching solution is HF, and the etching time is 5 s. And after etching, obtaining the low-k medium with the second thickness, wherein the height of the metal tungsten wire is greater than the thickness of the low-k medium with the second thickness.
And carrying out secondary removal treatment on the metal tungsten wire and the low-k medium with the second thickness.
Removing the metal tungsten wire and the low-k medium with the second thickness by adopting chemical mechanical planarization, wherein the grinding head pressure of the chemical mechanical planarization is 35KPa, the rotating speed of a turntable is 65rpm, and the abrasive particles are Al 2 O 3 And the PH value of the grinding liquid is 3, the polishing time is 5min, the gap in the metal tungsten wire is removed, and the height of the removed metal tungsten wire is the same as the thickness of the low-k medium with the second thickness.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention.

Claims (10)

1. A method of forming a metal wire or piece, comprising:
providing a substrate, and depositing an insulating layer with an initial thickness on the substrate;
forming a metal through hole in the insulating layer of the initial thickness;
forming a metal wire or metal piece in the metal through hole, wherein the height of the metal wire or metal piece is larger than the insulating layer with the initial thickness;
carrying out first removal treatment on the metal wire or the metal piece and the insulating layer with the initial thickness to the top surface or below the top surface of the insulating layer with the initial thickness to obtain the insulating layer with the first thickness, wherein the height of the metal wire or the metal piece after the first removal treatment is the same as that of the insulating layer with the first thickness;
etching the insulating layer with the first thickness to obtain an insulating layer with a second thickness, wherein the second thickness is smaller than the first thickness;
and carrying out secondary removal treatment on the metal wire or the metal piece and the insulating layer with the second thickness.
2. The method of claim 1, wherein forming the metal via in the initial thickness of the insulating layer comprises:
forming a photoresist layer on the insulating layer of the initial thickness;
and photoetching and etching the photoresist layer and the insulating layer with the initial thickness to the surface of the substrate, removing the photoresist layer, and forming a metal through hole in the insulating layer with the initial thickness.
3. The method of claim 1, wherein forming the metal line or metal piece in the metal via has a height greater than an initial thickness of the insulating layer, and comprises:
forming a barrier layer on the inner wall of the metal through hole;
and forming a metal wire or a metal piece on the insulating layer and the barrier layer with the initial thickness, wherein the height of the metal wire or the metal piece is greater than that of the insulating layer with the initial thickness.
4. The method of claim 1, wherein the insulating layer is formed of a material selected from the group consisting of an oxide, a nitride, a low-k material, and a polymer.
5. The method of claim 1, wherein the wire or metal piece is made of one of tungsten, copper, titanium nitride, and aluminum.
6. The method of claim 1, wherein the first removing process is a first dry etching or a first chemical mechanical planarization.
7. The method of claim 1, wherein the etching process comprises a second dry etching or a first wet etching.
8. The method of claim 1, wherein the second removing process comprises a third dry etching.
9. The method of claim 1, wherein the second removing step comprises a second chemical mechanical planarization.
10. The method of claims 6-9 wherein the metal wire or metal article is selected to have an initial thickness of the insulating layer of greater than 10:1 in the first chemical mechanical planarization.
CN202110113750.XA 2021-01-27 2021-01-27 Method for forming metal wire or metal piece Pending CN114823489A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115101473A (en) * 2022-08-29 2022-09-23 成都探芯科技有限公司 Method for removing layers of aluminum through hole chip

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115101473A (en) * 2022-08-29 2022-09-23 成都探芯科技有限公司 Method for removing layers of aluminum through hole chip
CN115101473B (en) * 2022-08-29 2024-01-26 成都探芯科技有限公司 Delayering method for aluminum through hole chip

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