CN114823280A - Method for reducing thickness of semiconductor wafer - Google Patents
Method for reducing thickness of semiconductor wafer Download PDFInfo
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- CN114823280A CN114823280A CN202110108824.0A CN202110108824A CN114823280A CN 114823280 A CN114823280 A CN 114823280A CN 202110108824 A CN202110108824 A CN 202110108824A CN 114823280 A CN114823280 A CN 114823280A
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- semiconductor wafer
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- transmitting substrate
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 92
- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims description 58
- 238000000227 grinding Methods 0.000 claims description 54
- 239000003292 glue Substances 0.000 claims description 23
- 230000001678 irradiating effect Effects 0.000 claims description 16
- 239000011521 glass Substances 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000003825 pressing Methods 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 81
- 239000000919 ceramic Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention relates to the technical field of semiconductor processing, and discloses a method for reducing the thickness of a semiconductor wafer.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to a method for reducing the thickness of a semiconductor wafer.
Background
At present, a semiconductor wafer thinning method is generally realized by mechanical processing, and the process flow of the method needs to adhere the front surface of the wafer to a ceramic substrate, then fix the ceramic substrate on a grinding table, and polish the bottom surface of the wafer by using a grinding wheel. In the bonding process, the glue used by the method has strong bonding force, is difficult to separate after thinning, and can damage the front surface of the wafer to a certain degree.
Disclosure of Invention
An object of the embodiments of the present invention is to provide a method for thinning a semiconductor wafer, which can avoid the problem of wafer damage caused by difficulty in separating the wafer from the substrate in the semiconductor wafer thinning process in the prior art.
In order to solve the above technical problem, an embodiment of the present invention provides a method for reducing a thickness of a semiconductor wafer, including:
coating UV glue on one surface of the light-transmitting substrate;
irradiating the light-transmitting substrate by ultraviolet light, wherein the irradiation time is a first preset time;
pressing the front surface of the semiconductor wafer on one surface of the light-transmitting substrate coated with the UV glue;
irradiating the light-transmitting substrate by ultraviolet light, wherein the irradiation time is a second preset time;
carrying out mechanical grinding on the semiconductor wafer;
irradiating the light-transmitting substrate by ultraviolet light for a third preset time;
separating the semiconductor wafer from the light-transmitting substrate.
Preferably, the first preset time period is 4-6 seconds, the second preset time period is 90-110 seconds, and the third preset time period is 4-6 minutes.
As a preferred scheme, the first preset time period is 5 seconds, the second preset time period is 100 seconds, and the third preset time period is 5 minutes.
Preferably, the UV paste coated on one side of the light-transmitting substrate has a thickness of 80 to 90 μm.
Preferably, the illumination intensity of the ultraviolet light is as follows: 3000-4000mj/CM 2 。
Preferably, the light-transmitting substrate is a glass substrate.
As a preferred scheme, the mechanical polishing of the semiconductor wafer specifically includes:
roughly grinding the semiconductor wafer;
after the rough grinding of the semiconductor wafer, the fine grinding of the semiconductor wafer is performed.
As a preferred embodiment, the rough grinding of the semiconductor wafer specifically includes:
the semiconductor wafer was coarsely ground by a grinding wheel at a feed rate of 5.0 μm/s, a rotational speed of the grinding wheel of 5000rpm, and a grinding depth of the semiconductor wafer of 1 mm.
As a preferred scheme, after the rough grinding is performed on the semiconductor wafer, the finish grinding is performed on the semiconductor wafer, which specifically includes:
the semiconductor wafer was finely ground by means of a grinding wheel at a feed rate of 8.0 μm/s, a rotational speed of the grinding wheel of 6000rpm and a grinding depth of 200 μm.
Compared with the prior art, the embodiment of the invention has the beneficial effects that: the embodiment of the invention provides a method for reducing the thickness of a semiconductor wafer, which comprises the steps of coating UV glue on one surface of a light-transmitting substrate, irradiating the light-transmitting substrate by ultraviolet light, pressing the front surface of the semiconductor wafer on the surface of the light-transmitting substrate coated with the UV glue, irradiating the light-transmitting substrate by the ultraviolet light, mechanically grinding the semiconductor wafer, irradiating the light-transmitting substrate by the ultraviolet light, and finally easily separating the semiconductor wafer from the light-transmitting substrate without damaging the front surface of the semiconductor wafer, thereby avoiding the problems that the wafer is difficult to separate from the substrate and the wafer is damaged in the semiconductor wafer reduction process in the prior art.
Drawings
FIG. 1 is a flow chart of a method for thinning a semiconductor wafer in accordance with an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, a flow chart of a method for reducing a thickness of a semiconductor wafer according to an embodiment of the invention is shown.
The method for reducing the thickness of the semiconductor wafer comprises the following steps:
s101, coating UV glue on one surface of a light-transmitting substrate;
s102, irradiating the light-transmitting substrate by ultraviolet light, wherein the irradiation time is a first preset time;
s103, pressing the front surface of the semiconductor wafer on the surface of the light-transmitting substrate coated with the UV glue;
s104, irradiating the light-transmitting substrate by ultraviolet light, wherein the irradiation time is a second preset time;
s105, mechanically grinding the semiconductor wafer;
s106, irradiating the light-transmitting substrate by ultraviolet light, wherein the irradiation time is a third preset time;
s107, separating the semiconductor wafer from the light-transmitting substrate.
In the embodiment of the invention, the UV glue is coated on one surface of the transparent substrate, the transparent substrate is irradiated by the ultraviolet light, the front surface of the semiconductor wafer is pressed on the surface of the transparent substrate coated with the UV glue, the transparent substrate is irradiated by the ultraviolet light, the semiconductor wafer is mechanically ground, and the transparent substrate is irradiated by the ultraviolet light, so that the semiconductor wafer and the transparent substrate can be easily separated without damaging the front surface of the semiconductor wafer, and the problem that the wafer is difficult to separate from the substrate and the wafer is damaged in the semiconductor wafer thinning process in the prior art is solved.
Specifically, the transparent substrate is a glass substrate, and the thickness of the UV glue coated on one side of the transparent substrate is 80-90 μm. The illumination intensity of the ultraviolet light is as follows: 3000-4000mj/CM 2 . The first preset time is 4-6 seconds, and can be 4 seconds, 5 seconds, 6 seconds and the like; the second preset time is 90-110 seconds, and can be 90 seconds, 95 seconds, 100 seconds, 105 seconds, 110 seconds and the like; the third predetermined period of time, 4-6 minutes, may be 4 minutes, 5 minutes, 6 minutes, etc. Preferably, the first preset time period is 5 seconds, the second preset time period is 100 seconds, and the third preset time period is 5 minutes.
In the embodiment of the invention, the UV glue is used for replacing the traditional glue, and the UV glue has the function of gradually reducing the viscosity, so that the separation can be automatically generated under the irradiation of ultraviolet light, the front side of the semiconductor wafer can not be damaged, and the operation difficulty is greatly reduced. In addition, a material having good light transmittance such as glass is selected instead of ceramic as the substrate.
In the specific implementation, firstly, the UV glue is coated on the surface of the glass substrate, the thickness of the glue layer is 80-90um, and the viscosity of the UV glue is 28-30N/in. Then, the glass surface was irradiated with ultraviolet light for 5 seconds to chemically change the UV glue and reduce its viscosity to 20-2N/in. And then, the front surface of the semiconductor wafer is attached to a glass substrate to be compacted, bubbles are extruded out, ultraviolet light is used for irradiating for 100 seconds through the transparent surface of the glass, and the glass substrate and the surface of the wafer are firmly adhered together in the UV glue curing process.
In an optional implementation manner, the step S105 "mechanically polishing the semiconductor wafer" specifically includes:
roughly grinding the semiconductor wafer;
after the rough grinding of the semiconductor wafer, the semiconductor wafer is subjected to a finish grinding.
In the embodiment of the invention, the semiconductor wafer is roughly ground, and after the semiconductor wafer is roughly ground, the semiconductor wafer is finely ground to obtain the required thickness of the semiconductor wafer, and meanwhile, the surface of the processed semiconductor wafer is ensured to be approximately flat, so that the subsequent further processing of the semiconductor wafer is facilitated.
In an optional embodiment, the rough grinding of the semiconductor wafer specifically includes:
the semiconductor wafer was coarsely ground by a grinding wheel at a feed rate of 5.0 μm/s, a rotational speed of the grinding wheel of 5000rpm, and a grinding depth of the semiconductor wafer of 1 mm.
In an alternative embodiment, after the rough grinding is performed on the semiconductor wafer, the fine grinding is performed on the semiconductor wafer, which specifically includes:
the semiconductor wafer was finely ground by means of a grinding wheel at a feed rate of 8.0 μm/s, a rotational speed of the grinding wheel of 6000rpm and a grinding depth of 200 μm.
Specifically, in the rough grinding stage: and the grinding wheel enters a grinding stage, the downward feeding speed of the grinding wheel is 5.0 mu m/s, the rotating speed of the grinding wheel is 5000rpm, and the grinding target depth of the wafer is 1 mm. In the fine grinding stage: the grinding wheel rotating speed is 6000rpm, the grinding wheel feeding speed is 8.0 mu m/s, and the grinding depth of the wafer target is 200 mu m.
In the embodiment of the invention, after the thinning purpose is achieved, the glass substrate is irradiated by ultraviolet light for 5 minutes, so that the viscosity of the glass substrate reaches 0.02-0.03N/in, and the semiconductor wafer and the UV adhesive are convenient to separate.
In the specific implementation, when the semiconductor wafer is separated from the light-transmitting substrate and enters a subsequent semiconductor wafer processing technology, the semiconductor wafer is etched by using the etching liquid. Because most of the semiconductor wafers are removed by grinding before etching, the semiconductor wafers can be etched by using very little etching liquid, so that the cost is reduced, the operation time is shortened, and the production operation is finished on the premise of ensuring the surface smoothness of the wafers.
Compared with the prior art, the embodiment of the invention has the beneficial effects that: the embodiment of the invention provides a method for thinning a semiconductor wafer, which comprises the steps of coating UV glue on one surface of a light-transmitting substrate, irradiating the light-transmitting substrate by ultraviolet light, pressing the front surface of a semiconductor wafer on the surface of the light-transmitting substrate coated with the UV glue, irradiating the light-transmitting substrate by the ultraviolet light, mechanically grinding the semiconductor wafer, irradiating the light-transmitting substrate by the ultraviolet light, and finally easily separating the semiconductor wafer from the light-transmitting substrate without damaging the front surface of the semiconductor wafer, thereby avoiding the problems that the wafer is difficult to separate from the substrate and the wafer is damaged in the semiconductor wafer thinning process in the prior art.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and substitutions can be made without departing from the technical principle of the present invention, and these modifications and substitutions should also be regarded as the protection scope of the present invention.
Claims (10)
1. A method for reducing the thickness of a semiconductor wafer is characterized by comprising the following steps:
coating UV glue on one surface of the light-transmitting substrate;
irradiating the light-transmitting substrate by ultraviolet light, wherein the irradiation time is a first preset time;
pressing the front surface of the semiconductor wafer on one surface of the light-transmitting substrate coated with the UV glue;
irradiating the light-transmitting substrate by ultraviolet light, wherein the irradiation time is a second preset time;
carrying out mechanical grinding on the semiconductor wafer;
irradiating the light-transmitting substrate by ultraviolet light for a third preset time;
separating the semiconductor wafer from the light-transmitting substrate.
2. A method of reducing thickness in a semiconductor wafer of claim 1, wherein the first predetermined period of time is 4-6 seconds, the second predetermined period of time is 90-110 seconds, and the third predetermined period of time is 4-6 minutes.
3. A method for reducing thickness of a semiconductor wafer as recited in claim 2, wherein the first predetermined period of time is 5 seconds, the second predetermined period of time is 100 seconds, and the third predetermined period of time is 5 minutes.
4. A method for reducing thickness of a semiconductor wafer as recited in claim 1, wherein the second predetermined period of time is 100 seconds.
5. A method of reducing thickness of a semiconductor wafer as claimed in claim 1, wherein the UV glue applied to one side of the transparent substrate has a thickness of 80-90 μm.
6. A method of reducing thickness in a semiconductor wafer as claimed in claim 1, wherein the intensity of the uv light is: 3000-4000mj/CM 2 。
7. A method of reducing thickness of a semiconductor wafer as recited in claim 1, wherein the light-transmissive substrate is a glass substrate.
8. A method for reducing thickness of a semiconductor wafer according to any one of claims 1 to 7, wherein the mechanical grinding of the semiconductor wafer comprises:
roughly grinding the semiconductor wafer;
after the rough grinding of the semiconductor wafer, the fine grinding of the semiconductor wafer is performed.
9. A method for reducing thickness of a semiconductor wafer as claimed in claim 8, wherein the rough grinding of the semiconductor wafer comprises:
the semiconductor wafer was coarsely ground by a grinding wheel at a feed rate of 5.0 μm/s, a rotational speed of the grinding wheel of 5000rpm, and a grinding depth of the semiconductor wafer of 1 mm.
10. A method for reducing thickness of a semiconductor wafer as recited in claim 8, wherein the step of lapping the semiconductor wafer after rough grinding comprises:
the semiconductor wafer was finely ground by means of a grinding wheel at a feed rate of 8.0 μm/s, a rotational speed of the grinding wheel of 6000rpm and a grinding depth of 200 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110108824.0A CN114823280A (en) | 2021-01-27 | 2021-01-27 | Method for reducing thickness of semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110108824.0A CN114823280A (en) | 2021-01-27 | 2021-01-27 | Method for reducing thickness of semiconductor wafer |
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| Publication Number | Publication Date |
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| CN114823280A true CN114823280A (en) | 2022-07-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202110108824.0A Pending CN114823280A (en) | 2021-01-27 | 2021-01-27 | Method for reducing thickness of semiconductor wafer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115938927A (en) * | 2022-12-28 | 2023-04-07 | 芯钛科半导体设备(上海)有限公司 | Ultrathin wafer thinning process |
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2021
- 2021-01-27 CN CN202110108824.0A patent/CN114823280A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115938927A (en) * | 2022-12-28 | 2023-04-07 | 芯钛科半导体设备(上海)有限公司 | Ultrathin wafer thinning process |
| CN115938927B (en) * | 2022-12-28 | 2024-02-09 | 芯钛科半导体设备(上海)有限公司 | Ultrathin wafer thinning process |
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