CN114813826A - Method and module for testing heat conduction characteristic of semiconductor chip packaging shell - Google Patents
Method and module for testing heat conduction characteristic of semiconductor chip packaging shell Download PDFInfo
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- CN114813826A CN114813826A CN202210413955.4A CN202210413955A CN114813826A CN 114813826 A CN114813826 A CN 114813826A CN 202210413955 A CN202210413955 A CN 202210413955A CN 114813826 A CN114813826 A CN 114813826A
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- G01N25/00—Investigating or analyzing materials by the use of thermal means
- G01N25/20—Investigating or analyzing materials by the use of thermal means by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
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Abstract
The invention discloses a method and a module for testing the heat conduction characteristic of a semiconductor chip packaging shell, belonging to the technical field of semiconductor chip packaging shell testing, wherein the testing method comprises the steps of manufacturing a metal film resistor on the upper surface of a heat conduction substrate; fixedly assembling the heat-conducting substrate with the metal film resistor in a packaging shell to be tested and electrically connecting the heat-conducting substrate with the packaging shell to be tested to form a packaging shell testing module; installing a package shell test module into an infrared test system, and electrifying a metal film resistor to simulate the working state of a semiconductor chip; and testing the metal film resistor and the surface temperature of the packaging shell, and calculating the heat conduction characteristic parameters of the packaging shell. The method for testing the heat conduction characteristic of the semiconductor chip packaging shell can test the heat characteristic of the packaging shell through a simple method and process, thereby not only improving the accuracy of the test, but also reducing the test cost.
Description
Technical Field
The invention relates to the technical field of semiconductor chip package shell testing, in particular to a method and a module for testing the heat conduction characteristic of a semiconductor chip package shell.
Background
The thermal characteristics of the miniaturized semiconductor package become important factors for limiting the power of the semiconductor device at present, and how to evaluate the heat conduction performance of the semiconductor power chip package shell is one of the difficulties of evaluating the package shell. A common evaluation method is a method of performing a simulation test on the package case or performing a test on the thermal conductivity by using a semiconductor chip such as a GaN or GaAs HEMT chip and a module made of the package case.
If the simulation method is adopted, the thermal performance of the packaging shell cannot be truly reflected.
If a method for testing the heat conduction characteristic of a module for manufacturing a GaN or GaAs HEMT chip and a packaging shell is adopted, the heat conduction parameter of the tube shell cannot be evaluated, and only the heat conduction performance of the module formed by the chip and the packaging shell can be evaluated; in addition, the heating area of the chip is micron-sized, so that the heating is very uneven, and the chip is unstable due to the existence of the sintering cavity and the through hole, so that the heat conduction characteristic test of the packaging shell is inaccurate. And the semiconductor chip is an active device, and the grid electrode has input signals, so that the grid electrode is very easy to be interfered by external environment, the phenomena of self-excitation, sudden burning and the like are very easy to occur in the testing process, the testing efficiency is low, and the accuracy of testing data is low. And the method needs to use expensive chips and is high in cost.
Disclosure of Invention
Therefore, the invention provides a method and a module for testing the heat conduction characteristic of a semiconductor chip packaging shell, which adopt the metal film resistor matched with the size of the packaging shell to be assembled in the inner cavity of the packaging shell so as to simulate the working state of a semiconductor chip, the heating is uniform, the heat conduction characteristic of the packaging shell is obtained by an online testing method, and the invention has the advantages of simple structure, accurate test result and lower cost.
In order to achieve the above object, an aspect of the present invention provides a method for testing a thermal conductivity of a package housing of a semiconductor chip, including:
manufacturing a metal film resistor on the upper surface of the heat-conducting substrate;
fixedly assembling the heat-conducting substrate with the metal film resistor in a packaging shell to be tested and electrically connecting the heat-conducting substrate with the packaging shell to be tested to form a packaging shell testing module;
installing a package shell test module into an infrared test system, and electrifying a metal film resistor to simulate the working state of a semiconductor chip;
and testing the metal film resistor and the surface temperature of the packaging shell, and calculating the heat conduction characteristic parameters of the packaging shell.
Compared with the prior art, the scheme shown in the embodiment of the application replaces the thermal characteristic of the chip test package shell to be tested by adopting the metal film resistor, on one hand, the metal film resistor is simple to manufacture, the cost of the chip is relatively low, on the other hand, the metal film resistor is stable in heating, the resistance ends are powered on, the self-excitation problem does not exist, the metal film resistor is not easily burnt, and the test reliability is high.
With reference to the first aspect, in one possible implementation manner, a method for manufacturing a metal thin film resistor on an upper surface of a heat conducting substrate includes: cleaning the heat-conducting substrate;
preparing a metal film resistor with a preset resistance value on the upper surface of the heat-conducting substrate by adopting a photoetching process, and preparing a metal layer with a preset thickness on the lower surface of the heat-conducting substrate;
and the heat-conducting substrate is divided into a plurality of heat-conducting substrates matched with the size of the inner cavity of the packaging shell to be detected by adopting a slicing process.
In some embodiments, the thermally conductive substrate is a diamond substrate, an AlN substrate, a SiC substrate, or Al 2 O 3 A substrate.
Illustratively, the metal thin film resistor is sputtered or plated from nickel, chromium, gold, or from TaN and gold; the metal layer is gold.
In some embodiments, the fixing and assembling the heat conducting substrate fabricated with the metal thin film resistor in the package casing to be tested and electrically connected with the package casing includes: fixing the lower surface of the heat-conducting substrate on the inner cavity wall of the packaging shell to be tested by adopting a nitrogen protection eutectic sintering technology;
the input end and the grounding end of the metal film resistor are electrically connected with the input terminal and the shell base of the packaging shell respectively through bonding gold wires.
With reference to the first aspect, in one possible implementation manner, installing a package housing test module into an infrared test system includes:
assembling an infrared test system: the infrared test system comprises a heat conduction characteristic test fixture, a direct current bias module and an infrared tester, wherein the direct current bias module is electrically connected with a corresponding interface of the heat conduction characteristic test fixture; the infrared tester comprises a heating platform, an infrared lens for collecting temperature and infrared test analysis software for processing collected images; the heat conduction characteristic test fixture is arranged on the heating platform, and the infrared lens for collecting temperature is arranged above the heat conduction characteristic test fixture;
and assembling the packaging shell testing module to a heat conduction characteristic testing clamp, and applying a voltage U to the metal film resistor through the direct current bias module and the heat conduction testing clamp.
Illustratively, the method for measuring the metal film resistance and the surface temperature of the package shell and calculating the heat conduction characteristic parameters of the package shell test module comprises the following steps:
measuring the surface temperature of the metal film resistor and the temperature of the packaging shell by an infrared tester;
calculating thermal resistance R of package housing test module jc ，R jc ＝(T j -T c )/P diss ；
Wherein T is j Surface temperature of the metal film resistance expressed in K, T c Temperature of the package is expressed in K, P diss Power of metal film resistance, P diss U represents a voltage applied to the metal thin film resistor and has a unit of V, and I represents a current passing through the metal thin film resistor and has a unit of a.
For example, the input terminal and the ground terminal of the metal film resistor are manufactured by a bonding process.
In a second aspect, an embodiment of the present invention further provides a module for testing a thermal conductivity of a package casing of a semiconductor chip, including: the packaging shell comprises a shell base, an input terminal and an output terminal, and the packaging shell is enclosed into an inner cavity for packaging the semiconductor chip; the diamond substrate metal film resistor comprises an input end and a grounding end; the diamond substrate metal film resistor is fixedly assembled on the inner cavity wall of the packaging shell, the input end of the diamond substrate metal film resistor is connected with the input terminal and the grounding end of the packaging shell, and the shell base of the packaging shell is connected with the input terminal and the grounding end of the packaging shell to form a packaging shell testing module.
Illustratively, the metal film resistor is sputtered or plated from nickel, chromium, and gold, or sputtered or plated from TaN and gold.
Compared with the prior art, the scheme shown in the embodiment of the application is characterized in that the metal film resistor is fixedly assembled in the inner cavity of the packaging shell, and the input end and the grounding end of the metal film resistor are respectively connected with the input terminal and the base of the packaging shell to form the packaging shell testing module. The test reliability of the packaging shell is improved, and the test cost is greatly reduced.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
Fig. 1 is a schematic structural diagram of a metal thin film resistor in a method for testing a thermal conductivity of a semiconductor chip package according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a package casing testing module in a method for testing a thermal conductivity of a package casing of a semiconductor chip according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a package housing test module connected to an infrared test system in a method for testing a thermal conductivity of a package housing of a semiconductor chip according to an embodiment of the present invention;
in the figure: the device comprises a 10-metal film resistor, a 11-heat conducting substrate, a 12-film resistor layer, a 13-back metal layer, a 14-input end, a 15-grounding end, a 20-packaging shell, a 21-shell base, a 22-input terminal, a 23-output terminal, a 30-packaging shell testing module, a 40-infrared tester, a 50-heat conducting characteristic testing fixture and a 60-direct current bias module.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
The heat conduction characteristic of the existing test packaging shell is usually tested by adopting a simulation test or a mounting chip, but the thermal characteristic of the packaging shell to be tested can not be accurately reflected, so that the packaging shell to be tested can not be accurately evaluated. However, the thermal conductivity of the package directly affects the performance of the chip, and therefore, it is an important prerequisite to accurately evaluate the thermal conductivity of the package. Based on this, this application is through the operating condition of simulation chip, the heat conduction characteristic of actual survey encapsulation shell, and the testing result is accurate like this, can be used for assessing the actual heat conduction characteristic of encapsulation shell.
In order to explain the technical means of the present invention, the following description will be given by way of specific examples.
Referring to fig. 1 to fig. 3, a method for testing a thermal conductivity of a semiconductor chip package according to the present invention will be described.
Firstly, a metal film resistor 10 is manufactured on the upper surface of a heat conducting substrate 11, the heat conducting substrate 11 with the metal film resistor 10 is fixedly assembled in a packaging shell 20 to be tested and is electrically connected with the packaging shell 20 to be tested to form a packaging shell testing module 30, and then the packaging shell testing module 30 can be subjected to heat conducting characteristic testing. An infrared test system is used to test the package housing test module 30 in this application. The package housing test module 30 is installed in an infrared test system, and the metal thin film resistor 10 is energized, thereby simulating the operating state of the semiconductor chip. And testing the surface temperatures of the metal film resistor 10 and the packaging shell 20 by adopting an infrared testing system, and calculating the heat conduction characteristic parameters of the packaging shell 20.
In this embodiment, the metal thin film resistor 10 is prepared on the heat conducting substrate 11, and after the heat conducting property of the metal thin film resistor 10 is tested, the metal thin film resistor 10 is fixed in the package casing 20 to be tested, so as to form the package casing testing module 30. The metal film resistor 10 is adopted to replace a chip to test the thermal characteristic of the packaging shell 20 to be tested, on one hand, the metal film resistor 10 is simple to manufacture and relatively low in chip cost, on the other hand, because the metal film resistor 10 is stable in heating and powered on at two ends of the resistor, the self-excitation problem does not exist, the metal film resistor 10 is not easy to burn, and the test reliability is high.
In one embodiment, the method for manufacturing the metal thin film resistor 10 includes:
firstly, the selected heat conducting substrate 11 needs to be cleaned, wherein the heat conducting substrate 11 can adopt a material with higher heat conductivity as a substrate, such as diamond, AlN, SiC or Al 2 O 3 A substrate.
Then, a NiCr layer or a TaN layer is prepared on the upper surface of the heat-conducting substrate 11 by adopting an electroplating or magnetron sputtering method, and a thin film resistor layer 12 with a specific resistance value is prepared on the upper surface of the heat-conducting substrate 11 by adopting a photoetching process with the precision of 1 mu m according to the set size of the thin film resistor, so that the resistance value of the square resistor is constant. A back metal layer 13 with a specific thickness is prepared on the lower surface of the heat conducting substrate 11 by adopting an electroplating or magnetron sputtering method, so that the electric conductivity of the metal film resistor 10 is improved, and the electric conductivity is improved. After the metal thin film resistor 10 is manufactured, the heat conducting substrate 11 is divided according to the set size of the metal thin film resistor 10 by adopting a slicing process, and the size of the heat conducting substrate is matched with the size of the inner cavity of the packaging shell to be tested. That is, the size of the metal thin-film resistor 10 may be equal to the size of the chip actually mounted inside the package to be tested.
Specifically, the thin-film resistive layer 12 is sputtered or plated from nickel, chromium, gold, or from TaN and gold. The metal thin-film resistor 10 may be applied to various package housings. When the microwave package shell needs to be tested, a metal material with wide resistivity, low resistance temperature coefficient and self-passivation property needs to be selected, and the metal film resistor 10 prepared from the TaN film can be used in the package shell of the microwave chip to test the thermal property of the package shell of the microwave power chip.
In some embodiments, in order to ensure that heat is not concentrated at the bottom when the metal thin-film resistor 10 is fixed to the bottom of the package to be tested, a layer of pure gold is plated or magnetron sputtered on the lower surface of the substrate of the metal thin-film resistor 10, so that heat dissipation at the bottom of the substrate is improved, heat is not concentrated at the lower surface of the substrate, and heat distribution is not uniform.
In some embodiments, in order to ensure the accuracy of the metal thin film resistor 10, the metal thin film resistor 10 is manufactured by using a photolithography process with an accuracy of 1 μm, so as to ensure the accuracy of the metal thin film resistor 10 and ensure that the resistance of the manufactured square resistor is constant. When the metal thin film resistor 10 is used for testing the thermal characteristics of the package shell to be tested, the testing precision can be ensured. The film resistor can be prepared by adopting magnetron sputtering and electroplating processes.
In this embodiment, in order to fix the metal film resistor 10 in the package housing to be tested without affecting the heat conduction characteristic of the package housing to be tested, the lower surface of the heat conducting substrate 11 is fixed on the inner cavity wall of the package housing to be tested by using a nitrogen protection eutectic sintering technique. Under the condition that the requirement on the fixing mode of the chip to be mounted is not higher, other technologies can also be adopted to fix the metal thin-film resistor 10 in the inner cavity of the package shell to be tested.
Specifically, the metal film resistor 10 includes an input terminal 14 and a ground terminal 15, and the input terminal 14 and the ground terminal 15 are manufactured by using a pressure welding process. The package casing to be tested is also correspondingly provided with an input terminal 22 and a casing base 21, which are respectively welded with the input end 14 and the grounding end 15 of the metal film resistor 10, so that the metal film resistor 10 and the package casing to be tested are electrically connected. In order to realize effective electrical connection between the metal thin-film resistor 10 and the package housing to be tested, a gold bonding wire method is adopted, so that effective connection between the metal thin-film resistor 10 and the package housing to be tested is realized.
In one embodiment, the infrared test system includes a thermal conductivity test fixture 50, a DC bias module 60 electrically coupled to a corresponding interface of the thermal conductivity test fixture 50, and an infrared tester 40. It should be noted that the infrared tester 40, the dc bias module 60 and the thermal conductivity test fixture 50 in the embodiment of the present application are all conventional devices or modules.
The heat conduction characteristic test fixture 50 is used for assembling a package housing test module, and the direct current bias module 60 is used for electrifying the metal thin film resistor 10 installed on the heat conduction characteristic test fixture 50, so that the metal thin film resistor 10 can generate certain heat power consumption, and the thermal characteristics of the package housing when the chip normally works can be simulated.
The infrared tester 40 includes a heated platform, an infrared lens for acquiring temperature, and infrared test analysis software for processing the acquired images. The heat conduction characteristic test fixture 50 is arranged on the heating platform, and the infrared lens for collecting the temperature is arranged above the heat conduction characteristic test fixture. The package housing test module 30 is assembled to the thermal conductivity test jig 50, and a voltage U is applied to the metal thin film resistor 10 through the dc bias module 60 and the thermal conductivity test jig 50. Wherein, heating platform can be used for rectifying infrared tester's accuracy on the one hand, and on the other hand, heating platform can also simulate real service environment simultaneously, need heat the encapsulation shell test module that awaits measuring when the test. The temperature of the heated platen is typically 70 degrees and up to 110 degrees.
The specific test method comprises the following steps: the voltage U and the current I are applied to the metal thin film resistor 10 through the DC bias module 60, and the power P generated by the metal thin film resistor 10 is calculated diss UI. The unit of the voltage U is V, and the unit of I is A. Measuring the surface temperature T of the metal thin film resistor 10 using an infrared tester 40 j And package housing temperature T c The temperature is in units of K. Obtaining the thermal resistance of the packaging shell by a thermal resistance calculation formula:
R jc ＝(T j -T c )/P diss thereby obtaining the heat conduction characteristic parameter R of the packaging shell to be tested jc 。
The application realizes the test of the thermal characteristics of the package shell to be tested by adopting the metal film resistor 10 to be fixed in the package shell to be tested. Simple structure, convenient operation and low cost. The metal thin film resistor 10 is temperature stable compared to the heat generated by conventionally used GaN and GaAs HEMT chips. Because the two ends of the metal film resistor 10 are electrified, the self-excitation problem does not exist, and the metal film resistor is not easy to burn. But the conventional test needs to be powered on three ends of the GaAs HEMT and the GaN HEMT, and the chip is easy to burn out.
Table 1 shows the difference between the original test method and the method of the invention in the heat conduction performance test of the tube casing QF0714-2, taking the tube casing QF0714-2 produced by Hebei semiconductor research institute as an example.
TABLE 1
As another embodiment of the present invention, a thermal conductivity test module for a semiconductor chip package housing is provided, which includes a package housing 20 and a diamond substrate metal thin film resistor 10.
Wherein the package housing 20 includes a housing base 21, an input terminal 22 and an output terminal 23, the package housing 20 enclosing an inner cavity for packaging the semiconductor chip. The diamond substrate metal thin film resistor 10 comprises an input end 14 and a grounding end 15.
The diamond substrate metal film resistor 10 is fixedly assembled on the inner cavity wall of the package housing 20, and the input end 14 of the diamond substrate metal film resistor 10 is connected with the input terminal 22 of the package housing 20, and the grounding end 15 is connected with the housing base 21 of the package housing, so as to assemble the package housing testing module 30.
In one embodiment, the metal thin film resistor 10 is sputtered or plated from nickel, chromium, and gold, or from TaN and gold.
The invention adopts the diamond substrate metal film resistor 10 and the packaging shell 20 to form the packaging shell testing module 30, thereby reducing the manufacturing cost of the chip, greatly improving the heat conduction characteristic testing efficiency of the packaging shell and reducing the testing cost.
It should be understood that, the sequence numbers of the steps in the foregoing embodiments do not imply an execution sequence, and the execution sequence of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present invention; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.
Claims (10)
1. A method for testing the heat conduction characteristic of a semiconductor chip package shell is characterized by comprising the following steps:
manufacturing a metal film resistor on the upper surface of the heat-conducting substrate;
fixedly assembling the heat-conducting substrate with the metal film resistor in a packaging shell to be tested and electrically connecting the heat-conducting substrate with the packaging shell to be tested to form a packaging shell testing module;
installing the packaging shell test module into an infrared test system, and electrifying the metal film resistor to simulate the working state of the semiconductor chip;
and testing the metal film resistor and the surface temperature of the packaging shell, and calculating the heat conduction characteristic parameters of the packaging shell.
2. The method for testing the thermal conductivity of a semiconductor chip package according to claim 1, wherein the step of forming the metal thin film resistor on the upper surface of the thermal conductive substrate comprises:
cleaning the heat-conducting substrate;
preparing a metal film resistor with a preset resistance value on the upper surface of the heat-conducting substrate by adopting a photoetching process, and preparing a metal layer with a preset thickness on the lower surface of the heat-conducting substrate;
and the heat-conducting substrate is divided into a plurality of heat-conducting substrates matched with the size of the inner cavity of the packaging shell to be detected by adopting a slicing process.
3. The method for testing the thermal conductivity of a semiconductor chip package according to claim 1 or 2,the heat-conducting substrate is a diamond substrate, an AlN substrate, a SiC substrate or Al 2 O 3 A substrate.
4. The method for testing the thermal conductivity of a semiconductor chip package according to claim 2, wherein the metal thin film resistor is sputtered or plated from nickel, chromium, gold, or from TaN and gold;
the metal layer is gold.
5. The method for testing the thermal conductivity of a semiconductor chip package according to claim 1, wherein said fixing and assembling the thermal conductive substrate with the metal thin film resistor inside the package to be tested and electrically connected to the package comprises:
fixing the lower surface of the heat-conducting substrate on the inner cavity wall of the packaging shell to be tested by adopting a nitrogen protection eutectic sintering technology;
and electrically connecting the input end and the grounding end of the metal film resistor with the input terminal and the shell base of the packaging shell respectively through a gold bonding wire.
6. The method for testing the thermal conductivity of a semiconductor chip package according to claim 1, wherein said mounting said package housing test module into an infrared test system comprises:
assembling an infrared test system: the infrared test system comprises a heat conduction characteristic test fixture, a direct current bias module and an infrared tester, wherein the direct current bias module is electrically connected with a corresponding interface of the heat conduction characteristic test fixture; the infrared tester comprises a heating platform, an infrared lens for collecting temperature and infrared test analysis software for processing collected images; the heat conduction characteristic test fixture is arranged on the heating platform, and the infrared lens for collecting the temperature is arranged above the heat conduction characteristic test fixture;
and assembling the packaging shell testing module to the heat conduction characteristic testing clamp, and applying a voltage U to the metal film resistor through the direct current bias module and the heat conduction characteristic testing clamp.
7. The method for testing the thermal conductivity of the package housing of semiconductor chip according to claim 6, wherein the testing the metal thin film resistor and the surface temperature of the package housing, and the calculating the thermal conductivity parameters of the package housing testing module comprises:
measuring the surface temperature of the metal film resistor and the temperature of the packaging shell by the infrared tester;
calculating the thermal resistance R of the package housing test module jc ，R jc ＝(T j -T c )/P diss ；
Wherein T is j The surface temperature of the metal film resistor is expressed by K, T c Temperature of the package is expressed in K, P diss Representing the power, P, of the resistance of the metal film diss U denotes a voltage applied to the metal thin film resistor and has a unit of V, and I denotes a current passing through the metal thin film resistor and has a unit of a.
8. The method of claim 1, wherein the input terminal and the ground terminal of the metal film resistor are fabricated by a bonding process.
9. A semiconductor chip package shell thermal conductivity test module, comprising:
the packaging shell comprises a shell base, an input terminal and an output terminal, and the packaging shell is enclosed into an inner cavity for packaging the semiconductor chip;
the diamond substrate metal film resistor comprises an input end and a grounding end;
the diamond substrate metal film resistor is fixedly assembled on the inner cavity wall of the packaging shell, the input end of the diamond substrate metal film resistor is connected with the input terminal and the grounding end of the packaging shell, and the input terminal and the grounding end of the diamond substrate metal film resistor are connected with the shell base of the packaging shell, and the diamond substrate metal film resistor is assembled into a packaging shell testing module for testing the heat conduction characteristic of the packaging shell.
10. The semiconductor chip package housing thermal conductivity property test module of claim 9, wherein the metal thin film resistor is sputtered or plated from nickel, chromium and gold, or sputtered or plated from TaN and gold.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110418654.6A CN113340936A (en) | 2021-04-19 | 2021-04-19 | Method and module for testing heat conduction characteristic of semiconductor chip packaging shell |
| CN2021104186546 | 2021-04-19 |
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| CN114813826A true CN114813826A (en) | 2022-07-29 |
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| CN202110418654.6A Withdrawn CN113340936A (en) | 2021-04-19 | 2021-04-19 | Method and module for testing heat conduction characteristic of semiconductor chip packaging shell |
| CN202210413955.4A Pending CN114813826A (en) | 2021-04-19 | 2022-04-14 | Method and module for testing heat conduction characteristic of semiconductor chip packaging shell |
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