CN114812121A - Silicon wafer drying device and drying method, and texturized silicon wafer post-treatment system and method - Google Patents
Silicon wafer drying device and drying method, and texturized silicon wafer post-treatment system and method Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 238
- 239000010703 silicon Substances 0.000 title claims abstract description 238
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 237
- 238000001035 drying Methods 0.000 title claims abstract description 135
- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000005192 partition Methods 0.000 claims abstract description 80
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 37
- 238000007664 blowing Methods 0.000 claims abstract description 22
- 235000012431 wafers Nutrition 0.000 claims description 220
- 238000002161 passivation Methods 0.000 claims description 68
- 239000007789 gas Substances 0.000 claims description 65
- 230000001681 protective effect Effects 0.000 claims description 40
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 39
- 239000007788 liquid Substances 0.000 claims description 22
- 230000018044 dehydration Effects 0.000 claims description 18
- 238000006297 dehydration reaction Methods 0.000 claims description 18
- 239000003814 drug Substances 0.000 claims description 17
- 239000012535 impurity Substances 0.000 claims description 15
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 9
- 239000000243 solution Substances 0.000 claims description 9
- 239000007864 aqueous solution Substances 0.000 claims description 8
- 238000012805 post-processing Methods 0.000 claims description 8
- 238000001914 filtration Methods 0.000 claims description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 208000005156 Dehydration Diseases 0.000 description 16
- 210000004027 cell Anatomy 0.000 description 15
- 230000000694 effects Effects 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000009826 distribution Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 239000013049 sediment Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000003749 cleanliness Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 210000005056 cell body Anatomy 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000007888 film coating Substances 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 230000009194 climbing Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000010981 drying operation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B9/00—Machines or apparatus for drying solid materials or objects at rest or with only local agitation; Domestic airing cupboards
- F26B9/10—Machines or apparatus for drying solid materials or objects at rest or with only local agitation; Domestic airing cupboards in the open air; in pans or tables in rooms; Drying stacks of loose material on floors which may be covered, e.g. by a roof
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B21/00—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
- F26B21/003—Supply-air or gas filters
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B21/00—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
- F26B21/004—Nozzle assemblies; Air knives; Air distributors; Blow boxes
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B25/00—Details of general application not covered by group F26B21/00 or F26B23/00
- F26B25/008—Seals, locks, e.g. gas barriers or air curtains, for drying enclosures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides a silicon wafer drying device and a drying method, and a texturing silicon wafer post-treatment system and a texturing silicon wafer post-treatment method, wherein the silicon wafer drying device comprises: drying the trough body; the drying trough comprises a drying trough body, a plurality of hollow partition plates and a plurality of air blowing holes, wherein the drying trough body is internally provided with a plurality of drying channels; and the hot air supply device is communicated with the inner cavity of the hollow partition plate so as to introduce hot air into the inner cavity of the hollow partition plate. The silicon wafer drying device and drying method, and the texturing silicon wafer post-treatment system and method can reduce the poor water stain print of the battery piece, improve the yield, production efficiency and battery efficiency of the battery piece, and reduce the production cost of the battery piece.
Description
Technical Field
The invention relates to the technical field of solar cell production, in particular to a silicon wafer drying device and drying method and a texturing silicon wafer post-treatment system and method.
Background
The heterojunction cell is called a crystalline silicon heterojunction solar cell, also called HIT, HJT and SHJ, is a special PN junction and is formed by amorphous silicon and crystalline silicon materials. Heterojunction cells, which are amorphous silicon thin films deposited on crystalline silicon and which combine the advantages of crystalline silicon cells and thin film cells, are considered as one of the important development directions of high conversion efficiency silicon-based solar cells.
From the future technical development trend, the HJT technology can be combined with perovskite to form a silicon-based laminated cell, and the characteristics of high conversion efficiency, simple process flow, high yield, large sheet space, low-temperature process, compatibility with the existing high-efficiency component technology and the like are superposed, so that the HJT heterojunction technology for realizing low-cost mass production must become the best choice for expanding the new capacity of the cell. The key point of the photovoltaic power generation entering the flat-price internet-surfing era is that the heterojunction battery has high efficiency, high power, high reliability and high power generation capacity. Meanwhile, based on the characteristics of HJT, HJT has incomparable advantages with other possible next-generation battery technologies on large-size silicon wafers and double-sided rate, so that HJT becomes an ultimate platform technology of the currently known photovoltaic battery technology.
The biggest problem with heterojunction cells today is the higher production costs compared to the current mainstream PERC (passivated emitter and back cell) technology. Therefore, how to reduce the production cost of the heterojunction battery and improve the yield of the product and the battery efficiency is an important premise of large-scale mass production; the water stain imprint isolation rate of the battery piece caused by the texturing machine (mainly in the post-texturing treatment stage) is high, and the climbing of the yield, the efficiency and the capacity of the battery piece is seriously influenced.
In the preparation process of the heterojunction battery piece, the silicon piece needs to be subjected to rough polishing → ozone cleaning → precleaning → texturing → post cleaning → smoothing treatment → hydrofluoric acid passivation (predehydration) → slow lifting (dehydration) → drying. Because the heterojunction cell has a unique structure and requires a texturing interface to be well matched with an amorphous silicon interface, the requirements on the cleanliness and the dryness of the surface of a silicon wafer and the uniformity and the stability of the textured structure are obviously higher than those of the conventional monocrystalline silicon solar cell.
When the silicon wafer after texturing is cleaned (ozone is usually contained in cleaning agents), an oxide layer (silicon oxide) is generated on the surface of the battery. The reaction formula of the oxide layer formed on the surface of the textured silicon wafer during cleaning is as follows:
Si+2O 3 ＝SiO 2 +2O 2
silica is hardly soluble in water, but the spatial structure of silica gel composed of silica has numerous pores, so that the spatial structure of silica gel has water absorbability and is easy to adsorb impurities, and silica does not have conductivity, which affects battery efficiency.
If the chemical liquid formula of hydrofluoric acid passivation (pre-dehydration) can not well remove the oxide layer on the surface of the textured silicon wafer, water and impurities adsorbed in the oxide layer are extremely difficult to completely remove in the slow lifting (dehydration) and drying steps. Moreover, if the drying groove is unreasonable, the water stain on the surface of the texturing silicon wafer is difficult to continuously remove, poor deposition and passivation can be generated in a film coating process, the water stain and impurities directly block passivation deposition to form a water stain print, and the yield and the battery efficiency of a product are seriously influenced. And frequent liquid changing, shutdown maintenance and increased drying time can cause waste of liquid medicine, energy and time, so that the production cost is increased.
Disclosure of Invention
Therefore, it is necessary to provide a silicon wafer drying device and a drying method, and a silicon wafer post-treatment system and a silicon wafer post-treatment method, which can reduce water stains and impurities on the surface of a silicon wafer after texturing and improve the yield of battery pieces.
According to an aspect of the present invention, there is provided a silicon wafer drying apparatus, including:
drying the trough body;
the hollow partition plate is arranged in the drying groove body, the hollow partition plate divides the inner cavity of the drying groove body into a plurality of silicon wafer placing areas, and the side wall of the hollow partition plate facing the silicon wafer placing areas is provided with a blowing hole communicated with the inner cavity of the hollow partition plate; and
and the hot air supply device is communicated with the inner cavity of the hollow partition plate and is used for introducing hot air into the inner cavity of the hollow partition plate.
In some embodiments, the number of the hollow partition plates is multiple, and the multiple hollow partition plates are sequentially arranged in the drying groove body at intervals so as to separate the inner cavity of the drying groove body into multiple silicon wafer placing areas which are sequentially arranged at intervals.
In some embodiments, the hot wind supplying apparatus includes:
an air filter for filtering ozone and impurities in the air entering the hot air supply device;
the air inlet of the fan is communicated with the air outlet of the air filter;
the air inlet of the air heater is communicated with the air outlet of the fan; and
the air inlet of the air conveying pipeline is communicated with the air outlet of the air heater, and the air outlet of the air conveying pipeline is communicated with the inner cavity of the hollow partition plate.
In some embodiments, the silicon wafer drying apparatus further comprises:
and the protective gas introducing device is communicated with the inner cavity of the drying groove body so as to introduce protective gas into the inner cavity of the drying groove body.
In some embodiments, the protective gas introducing device includes a protective gas pipeline, the protective gas pipeline is disposed in the drying tank, an extending direction of the protective gas pipeline is the same as an interval arrangement direction of the plurality of silicon wafer placing regions, and a plurality of gas outlets facing the silicon wafer placing regions are formed in the protective gas pipeline.
According to another aspect of the present invention, there is provided a silicon wafer drying method, comprising the steps of:
placing a silicon wafer to be dried into the silicon wafer placing area of the silicon wafer drying device; and
and introducing hot air into the inner cavity of the hollow partition plate through the hot air supply device, and blowing the hot air out of the air blowing holes and blowing the hot air to the silicon wafer.
In some embodiments, the silicon wafer in the silicon wafer placing region and the side wall of the hollow partition are arranged perpendicular to each other.
According to another aspect of the present invention, there is provided a texturizing silicon wafer post-treatment system comprising:
the passivation device is used for carrying out surface passivation treatment on the textured silicon wafer so as to remove an oxide layer on the surface of the silicon wafer; and
and the silicon wafer drying device is used for drying the silicon wafer subjected to the surface passivation treatment, and is the silicon wafer drying device provided by the invention.
In some embodiments, the texturizing silicon wafer post-treatment system further comprises:
and the slow pulling dehydration device is used for performing slow pulling dehydration on the silicon wafer after the surface passivation treatment and before the drying treatment are performed on the silicon wafer after the texturing.
According to another aspect of the invention, a texturing silicon wafer post-treatment method is provided, the texturing silicon wafer post-treatment system is adopted to perform post-treatment on a textured silicon wafer, and the method comprises the following steps:
placing the silicon wafer after texturing in the passivation device, and carrying out surface passivation treatment on the silicon wafer through passivation liquid medicine in the passivation device to remove an oxide layer on the surface of the silicon wafer; and
and placing the silicon wafer subjected to surface passivation treatment in the silicon wafer drying device, and drying the silicon wafer.
In some embodiments, the passivation solution is a hydrofluoric acid aqueous solution, and the mass ratio of hydrogen fluoride to water in the hydrofluoric acid aqueous solution is 1: (10-12).
In some embodiments, 150mL to 200mL of hydrofluoric acid is supplemented into the hydrofluoric acid aqueous solution after every 320 to 400 silicon wafers are passivated, and deposits at the bottom of the passivating device groove are discharged.
In some embodiments, during the surface passivation treatment of the silicon wafer, a passivation solution in the passivation device is circulated, and the circulation flow rate of the passivation solution is 40L/min to 60L/min.
In some embodiments, drying the silicon wafer comprises the following steps:
and introducing hot air into the inner cavity of the hollow partition plate through the hot air supply device, wherein the hot air is blown out through the air blowing holes on the side surface of the hollow partition plate and is blown to the silicon wafer so as to dry the silicon wafer.
In some embodiments, in the process of drying the silicon wafer, the method further comprises a step of introducing a protective gas into the silicon wafer drying device, wherein the introduction flow rate of the protective gas is 2m 3 /h～4m 3 /h。
Compared with the prior art, the invention has the following beneficial effects:
in the silicon wafer drying device, the hollow partition plate is arranged in the drying groove body to separate the inner cavity of the drying groove body into a plurality of silicon wafer placing areas, the side wall of the hollow partition plate is provided with the air blowing holes, and the hot air supply device is communicated with the inner cavity of the hollow partition plate. When the silicon wafer is dried, the flower basket containing the silicon wafer is placed in the silicon wafer placing area, hot air is blown to the silicon wafer through the air blowing holes of the hollow partition plate, and the surface of the silicon wafer is dried. Because of the blowholes on the hollow partition plate, the air pressure is increased after the air is gathered in the hollow partition plate, the speed of the air outlet is accelerated, and the capacity of taking away water vapor and water stain on the surface of the silicon wafer is enhanced, so that the drying effect and the drying efficiency are improved, and the water stain print of the battery piece can be reduced.
Furthermore, an air filter is additionally arranged in the hot air supply device to filter air introduced into the drying tank body, so that ozone and impurities in hot air can be reduced, and the surface of the silicon wafer is prevented from being oxidized in the drying process; through at the internal protective gas pipeline that adds of stoving cell, let in protective gas and protect the silicon chip when drying the silicon chip, can further avoid the silicon chip to be oxidized at stoving in-process surface to the water stain trace of further reduction battery piece is bad.
Furthermore, hydrofluoric acid is added in the surface passivation treatment process, bottom sediment of the groove is discharged, and the circulation flow of the passivation liquid medicine is controlled, so that the surface passivation effect of the silicon wafer is improved, the surface oxide layer of the silicon wafer is reduced, the surface hydrophobicity of the silicon wafer is enhanced, water and impurities are not easily adsorbed on the surface of the silicon wafer, and the water and the impurities on the surface of the silicon wafer are easily removed in the subsequent process, and the water stain print defects of the battery piece are further reduced.
Drawings
FIG. 1 is a schematic view showing the structure of a silicon wafer drying apparatus (not including a hot air supply apparatus) according to an embodiment of the present invention;
FIG. 2 is a schematic view of the silicon wafer drying apparatus of FIG. 1 after the silicon wafer is placed therein;
FIG. 3 is a schematic view of a connection between a hollow partition plate and a hot air supply device in the silicon wafer drying apparatus according to an embodiment of the present invention;
FIG. 4 is a schematic view of a hot air supply apparatus in a silicon wafer drying apparatus according to an embodiment of the present invention;
FIG. 5 is a block diagram of a texturing silicon wafer post-processing system according to an embodiment of the present invention.
Description of reference numerals:
10. a silicon wafer drying device; 11. drying the trough body; 12. a hollow partition plate; 13. a hot air supply device; 15. a silicon wafer placement area; 20. a silicon wafer texturing post-treatment system; 30. a silicon wafer; 40. a flower basket; 21. a passivation device; 22. slowly pulling up a dehydration device; 121. an air blowing hole; 131. an air filter; 132. a fan; 133. an air heater; 134. a gas transmission pipeline; 141. a shielding gas line; 142. an air outlet; 1341. a gas transmission main pipeline; 1342. a gas distribution pipeline.
Detailed Description
The present invention will be described in detail with reference to the following embodiments in order to make the aforementioned objects, features and advantages of the invention more comprehensible. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
Referring to fig. 1 and 2, in one embodiment of the present invention, a silicon wafer drying apparatus 10 is provided, and the silicon wafer drying apparatus 10 includes a drying tank 11, a hollow partition 12, and a hot air supply device 13 (see fig. 4).
The drying device comprises a drying groove body 11, a hollow partition plate 12, a plurality of silicon wafer placing areas 15 and a plurality of silicon wafers 30, wherein the hollow partition plate 12 is arranged in the drying groove body 11, the hollow partition plate 12 partitions the inner cavity of the drying groove body 11 into a plurality of silicon wafer placing areas 15, and the silicon wafers 30 to be dried are placed in the silicon wafer placing areas 15; one or more air blowing holes 121 communicated with the inner cavity of the hollow partition plate 12 are formed in the side wall of the hollow partition plate 12 facing the silicon wafer placing area 15; the air outlet end of the hot air supply device 13 is communicated with the inner cavity of the hollow partition plate 12, and is used for introducing hot air into the inner cavity of the hollow partition plate 12 so as to dry the water on the surface of the silicon wafer 30 in the silicon wafer placing area 15.
In the silicon wafer drying device 10, the hollow partition plate 12 is arranged in the drying tank body 11 to divide the inner cavity of the drying tank body 11 into a plurality of silicon wafer placing areas 15; the side surface of the hollow partition board 12 is provided with a blowhole 121 communicated with the inner cavity of the hollow partition board 12; and the air outlet end of the hot air supply device 13 is communicated with the inner cavity of the hollow partition plate 12. When the silicon wafer 30 is dried, the basket 40 containing the silicon wafer 30 is placed in the silicon wafer placing area 15, hot air is blown out to the silicon wafer 30 through the air blowing holes 121 on the side surface of the hollow partition plate 12, and water on the surface of the silicon wafer 30 is dried. Because the hollow partition plate 12 is of a hollow structure, heated clean gas is filled into the hollow partition plate 12, and the small, dense and thin air blowing holes 121 are formed in the side face of the hollow partition plate 12, so that the air pressure of the gas after gathering in the hollow partition plate 12 is increased, the speed of the air outlet flow is accelerated, and the capacity of taking away water vapor and water stains on the surface of the silicon wafer 30 is enhanced, so that the drying effect and the drying efficiency are improved, and the reduction of the bad water stain marks of the battery piece is facilitated.
In one specific example, the number of the hollow partition plates 12 is multiple, and the multiple hollow partition plates 12 are sequentially arranged in the drying groove body 11 at intervals, so that the inner cavity of the drying groove body 11 is partitioned to form multiple silicon wafer placing areas 15 which are sequentially arranged at intervals.
It can be understood that the specific number of the hollow partition plates 12 in the drying trough body 11, the size of the hollow partition plates 12, etc. may be specifically set according to the inner cavity volume and shape of the drying trough body 11. The number and the aperture of the blowing holes 121 on the side of the hollow partition 12 can also be specifically set according to the actually required wind pressure and the air outlet flow rate.
In one specific example, 3 hollow partition plates 12 with air blowing holes 121 are arranged in parallel in the drying trough body 11 at intervals, and the length of each hollow partition plate 12 is 30 cm-45 cm, the width of each hollow partition plate 12 is 23 cm-30 cm, and the thickness of each hollow partition plate 12 is 3 cm-5 cm. The distance between the adjacent hollow partition plates 12 and the distance between the hollow partition plate 12 at the end and the end plate of the drying tank 11 (i.e. the width of the silicon wafer placing region 15) are subject to the condition that at least the silicon wafer 30 can be placed.
Further, referring to fig. 2, the hollow partition 12 in the drying tank 11 is disposed upward along the vertical direction, and when the silicon wafer 30 is placed in the silicon wafer placing region 15, the silicon wafer 30 is disposed vertically with respect to the hollow partition 12. Due to the arrangement, hot air can be fully blown to the whole silicon wafer 30, and each silicon wafer 30 in the flower basket 40 can be simultaneously blown to the hot air, so that all the silicon wafers 30 in the flower basket 40 have basically the same drying effect.
Referring to fig. 3 and 4, in some embodiments, the hot air supply device 13 includes an air filter 131, a blower 132, an air heater 133, and an air pipe 134. Wherein, the air filter 131 is used for filtering ozone, solid and liquid impurities in the air entering the hot air supply device 13; an air inlet of the fan 132 is communicated with an air outlet of the air filter 131 through a pipeline; the air inlet of the air heater 133 is communicated with the air outlet of the fan 132 through a pipeline; the air inlet of the air pipeline 134 is communicated with the air outlet of the air heater 133; the inner cavity of the hollow partition 12 communicates with the air line 134.
Thus, the fan 132 is turned on, air is sucked from the air filter 131, ozone and solid impurities in the air are filtered by the air filter 131, the air is heated by the air heater 133, clean hot air is formed and introduced into the air delivery pipeline 134, the hot air enters the hollow partition plate 12 through the air delivery pipeline 134 and is blown to the silicon wafer 30 through the blowing holes 121. Ozone and impurity in the hot-blast can be filtered effectively through setting up air cleaner 131, obtain clean hot-blast, can reduce the oxidation on silicon chip 30 surface in the drying process, improve stoving effect and drying efficiency, reduce the water stain trace of battery piece bad. By using the hot air supply device 13, the drying time of the silicon wafers 30 is shortened from the original drying time of a batch of silicon wafers 30 of about 1050s to about 950 s.
Specifically, the air filter 131 may be a commercially available high efficiency chemical filter, the air heater 133 may be a commercially available high efficiency air heater, the fan 132 may be a frequency converter controlled fan 132, and the piping connecting between the air filter 131 and the fan 132 and between the fan 132 and the air heater 133 may be a flexible bellows.
Referring to fig. 3, in one specific example, the air delivery pipeline 134 includes an air delivery main pipeline 1341 and a gas distribution pipeline 1342. An air inlet of the air transmission main pipeline 1341 is communicated with an air outlet of the air heater 133, the air transmission main pipeline 1341 is communicated with an air distribution pipeline 1342, and the air distribution pipeline 1342 is communicated with an inner cavity of the hollow partition 12. Thus, the clean hot air heated by the air heater 133 enters the air delivery main pipeline 1341, then enters the air distribution pipeline 1342 through the air delivery main pipeline 1341, and then enters each hollow partition 12 through the air distribution pipeline 1342. The inner diameter of main gas delivery line 1341 is greater than the inner diameter of gas distribution line 1342.
In some embodiments, the silicon wafer drying apparatus 10 further comprises a protective gas introducing device. The protective gas introducing device is communicated with the inner cavity of the drying groove body 11 and is used for introducing protective gas into the inner cavity of the drying groove body 11. Through setting up foretell protective gas lets in the device, drying the in-process to silicon chip 30, can let in protective gas in to stoving cell body 11, further prevent that silicon chip 30's surface from by oxidation, maintain the chemical stability of whole gas in the stoving cell body 11, reduce the condition of silicon chip 30 oxidation back absorption water stain and impurity.
Specifically, the protective gas is a gas that does not react with the silicon wafer at the drying temperature. Such as nitrogen, inert gases, and the like.
Referring to fig. 1 and fig. 2, in one specific example, the shielding gas introducing device includes a plurality of shielding gas pipelines 141, the plurality of shielding gas pipelines 141 are disposed in the drying tank 11, and a plurality of gas outlets 142 are disposed on the shielding gas pipelines 141. The protective gas passes through the protective gas pipeline 141, and the protective gas is blown out through the gas outlet 142 and enters the drying tank body 11.
In some embodiments, the extending direction of the shielding gas pipeline 141 is the same as the spacing arrangement direction of the silicon wafer placing regions 15, and the shielding gas pipeline 141 is provided with a plurality of gas outlets 142 facing the silicon wafer placing regions 15. Thus, the protective gas can be introduced into the silicon wafer placing areas 15.
Further, the plurality of shielding gas pipelines 141 are divided into two groups, and the two groups of shielding gas pipelines 141 are respectively located at two sides of the inner cavity of the drying groove body 11 and located at two ends of the hollow partition plate 12. With such an arrangement, the protective gas can be introduced from both ends of the silicon wafer placing region 15, so as to protect the silicon wafer 30 better.
In some specific examples, the shielding gas line 141 is vertically disposed with respect to the hollow partition 12. With such an arrangement, the protective gas blown out from the gas outlet 142 can be directly blown into the silicon wafer placing areas 15, and the protective gas can be simultaneously blown into each silicon wafer placing area 15, thereby further improving the protective effect on the silicon wafers 30.
Referring to fig. 5, an embodiment of the present invention further provides a textured silicon wafer post-processing system 20, where the textured silicon wafer post-processing system 20 includes a passivation device 21 and a silicon wafer drying device 10.
The passivation device 21 is used for performing surface passivation treatment on the textured silicon wafer 30 so as to remove an oxide layer on the surface of the silicon wafer 30; the silicon wafer drying device 10 is used for drying the silicon wafer 30 after surface passivation. The silicon wafer drying apparatus 10 is the silicon wafer drying apparatus 10 of the present invention.
According to the texturing silicon wafer post-treatment system 20, the passivation device 21 and the silicon wafer drying device 10 are arranged, so that the silicon wafer 30 can be well passivated to remove an oxide layer on the surface of the textured silicon wafer 30, the silicon wafer 30 can be well dried, and therefore poor water stains of the battery piece can be effectively removed.
In some embodiments, the textured silicon wafer post-treatment system 20 further comprises a slow pull dehydration device 22, wherein the slow pull dehydration device 22 is used for performing slow pull dehydration on the textured silicon wafer 30 after the surface passivation treatment and before the drying treatment of the textured silicon wafer 30. By providing the slow pulling dehydration device 22, the passivation chemical on the surface of the silicon wafer 30 treated by the passivation device 21 can be removed better, and the water on the surface of the silicon wafer 30 can be reduced as much as possible.
An embodiment of the present invention further provides a textured silicon wafer post-processing method, wherein the textured silicon wafer post-processing system 20 of the present invention is adopted to perform post-processing on a textured silicon wafer 30, and the textured silicon wafer post-processing method includes the following steps S100 to S300.
Step S100: the silicon wafer 30 after texturing is placed in a passivation device 21, and passivation treatment is performed on the surface of the silicon wafer 30 through passivation liquid medicine in the passivation device 21 so as to remove an oxide layer on the surface of the silicon wafer 30.
In some embodiments, the passivation solution is an aqueous hydrofluoric acid solution, and the mass ratio of hydrogen fluoride to water in the aqueous hydrofluoric acid solution is 1: (10-12). The passivation liquid medicine prepared according to the composition ratio can effectively remove an oxide layer on the surface of the silicon wafer 30 after texturing, and has a good surface passivation effect.
Furthermore, after every 320-400 silicon wafers 30 are passivated, 150-200 mL of hydrofluoric acid is added into the hydrofluoric acid aqueous solution, and the sediment at the bottom of the passivation device 21 is discharged. After 320-400 silicon wafers 30 are processed, the hydrofluoric acid with the volume is added into the hydrofluoric acid aqueous solution, and the sediment at the bottom of the groove is discharged in time, so that the reaction activity of the passivation liquid medicine can be effectively improved, and the surface passivation effect on the silicon wafers 30 is further improved.
In the process of carrying out surface passivation treatment on the silicon wafer 30, the passivation liquid medicine in the passivation device 21 circularly flows; and the circulation flow of the passivation liquid medicine is controlled to be 40L/min-60L/min. The passivation liquid medicine circularly flows under the circulation flow, so that the circulation speed of the passivation liquid medicine can be effectively improved, the liquid medicine residue in the passivation device 21 is reduced, and the surface passivation treatment effect is improved.
By adjusting the composition ratio of the passivation liquid medicine and controlling the circulation and the circulation flow of the liquid medicine, the activity and the reaction efficiency of the passivation liquid medicine can be effectively improved, the residue of an oxide layer on the surface of the silicon wafer 30 is greatly reduced, the hydrophobicity of the surface of the silicon wafer 30 is enhanced, and the preparation work is fully carried out for the subsequent slow pulling dehydration and drying.
Step S200: and (3) placing the silicon wafer 30 subjected to surface passivation treatment in a slow pulling dehydration device 22, and performing slow pulling dehydration on the silicon wafer 30 to remove water on the surface of the silicon wafer 30 as much as possible.
After the surface passivation treatment is carried out on the silicon wafer 30 after the texturing, the silicon wafer 30 is placed in the slow pulling dehydration device 22 to carry out the slow pulling dehydration treatment. Through slow pulling and dewatering treatment, on one hand, residual passivating liquid medicine on the surface of the silicon wafer 30 can be removed, on the other hand, water on the surface of the silicon wafer 30 can be reduced as much as possible, so that the subsequent drying operation is facilitated, and poor water stain marks on the surface of a battery piece are reduced.
Step S300: the silicon wafer 30 after the surface passivation treatment is placed in the silicon wafer drying device 10 of the present invention, and the silicon wafer 30 is dried.
Specifically, the basket 40 containing the silicon wafer 30 after slow pulling and dehydration is placed in the silicon wafer placing area 15 in the drying tank 11, hot air is introduced into the inner cavity of the hollow partition plate 12 through the hot air supply device 13, and the hot air is blown out through the air blowing holes 121 on the side surface of the hollow partition plate 12 and blown to the silicon wafer 30, so that water on the surface of the silicon wafer 30 is dried. The hot air is filtered through the air filter 131, and the hot air does not contain ozone, solid and liquid impurities, so that the oxidation and the introduction of impurities on the surface of the silicon wafer 30 in the drying process are avoided.
In some embodiments, during the drying process of the silicon wafer 30, nitrogen is also introduced into the drying tank 11 as a protective gas through a protective gas introducing device. Specifically, the flow rate of the protective gas is 2m 3 /h～4m 3 H is used as the reference value. For example, it may be 2m 3 /h、2.5m 3 /h、3m 3 /h、3.5m 3 H and 4m 3 Specific values of/h, etc. And protective gas is introduced in the drying process, so that the surface of the silicon wafer 30 can be further prevented from being oxidized.
Generally speaking, the silicon wafer drying device is improved, a plurality of hollow partition plates 12 are additionally arranged in a drying groove body 11 to divide the inner cavity of the drying groove body 11 into a plurality of silicon wafer placing areas 15, a plurality of air blowing holes 121 are formed in the side surfaces of the hollow partition plates 12, and the inner cavity of the hollow partition plate 12 is communicated with a hot air supply device 13; the hot air supply device 13 is improved, and an air filter 131 is additionally arranged to filter the air introduced into the drying groove body 11; a protective gas pipeline 141 is additionally arranged in the drying tank body 11, and protective gas is introduced to protect the silicon wafer 30; and adjusting the surface passivation process, replenishing hydrofluoric acid, discharging the bottom sediment of the tank, and controlling the passivation liquid medicine to circularly flow at a certain flow rate. By combining the multiple technical means, the water stain print isolation proportion of the heterojunction battery piece is obviously reduced, and the yield of the battery piece is improved; and the yield and the battery efficiency of the battery piece are improved (the oxidation and water stain on the surface of the silicon chip 30 are greatly reduced, the passivation effect is better, and the Voc of the battery piece is improved).
The production line application result shows that compared with the traditional post-treatment system and post-treatment method, the texture etching silicon wafer post-treatment system and post-treatment method provided by the invention have the advantages that the cleanliness of the battery piece is greatly improved, and the water stain print of the battery piece is greatly reduced and basically disappears. The poor water stain imprinting proportion of the battery piece is reduced to about 0.0 percent from about 3.88 percent of the traditional post-treatment system and method, and the reduction amplitude is about 100 percent; the interface cleanliness of the silicon wafer 30 is higher, the film coating passivation effect is better, the average cell efficiency is improved from about 24.25% to about 24.31%, and is improved by about 0.06%; after the water stain imprinting problem is solved, the liquid changing time, the drying time and the shutdown maintenance frequency are all reduced, the production cost is reduced, the productivity is improved, and the output per shift is improved by about 1350 pieces.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the patent of the present invention should be subject to the appended claims, and the description and the drawings can be used for explaining the contents of the claims.
Claims (15)
1. The utility model provides a silicon chip drying device which characterized in that includes:
drying the trough body;
the hollow partition plate is arranged in the drying groove body, the hollow partition plate divides the inner cavity of the drying groove body into a plurality of silicon wafer placing areas, and the side wall of the hollow partition plate facing the silicon wafer placing areas is provided with a blowing hole communicated with the inner cavity of the hollow partition plate; and
and the hot air supply device is communicated with the inner cavity of the hollow partition plate and is used for introducing hot air into the inner cavity of the hollow partition plate.
2. The silicon wafer drying device according to claim 1, wherein the number of the hollow partition plates is multiple, and the multiple hollow partition plates are sequentially arranged in the drying groove body at intervals so as to partition the inner cavity of the drying groove body into multiple silicon wafer placing areas which are sequentially arranged at intervals.
3. The silicon wafer drying apparatus of claim 1, wherein the hot air supply means comprises:
an air filter for filtering ozone and impurities in the air entering the hot air supply device;
the air inlet of the fan is communicated with the air outlet of the air filter;
the air inlet of the air heater is communicated with the air outlet of the fan; and
the air inlet of the air conveying pipeline is communicated with the air outlet of the air heater, and the air outlet of the air conveying pipeline is communicated with the inner cavity of the hollow partition plate.
4. The wafer drying apparatus of claim 1, further comprising:
and the protective gas introducing device is communicated with the inner cavity of the drying groove body so as to introduce protective gas into the inner cavity of the drying groove body.
5. The silicon wafer drying device according to claim 4, wherein the protective gas introducing means comprises a protective gas pipeline, the protective gas pipeline is disposed in the drying bath, the extending direction of the protective gas pipeline is the same as the direction of the spaced arrangement of the silicon wafer placing regions, and a plurality of gas outlets facing the silicon wafer placing regions are formed in the protective gas pipeline.
6. A silicon wafer drying method is characterized by comprising the following steps:
placing a silicon wafer to be dried in the silicon wafer placing area of the silicon wafer drying apparatus according to any one of claims 1 to 5; and
and introducing hot air into the inner cavity of the hollow partition plate through the hot air supply device, and blowing the hot air out of the air blowing holes and blowing the hot air to the silicon wafer.
7. The silicon wafer drying method as claimed in claim 6, wherein the silicon wafer in the silicon wafer placing region is arranged perpendicular to the side wall of the hollow partition.
8. A texturized silicon wafer post-treatment system, comprising:
the passivation device is used for carrying out surface passivation treatment on the textured silicon wafer so as to remove an oxide layer on the surface of the silicon wafer; and
a silicon wafer drying device, configured to perform drying processing on the silicon wafer after the surface passivation processing, where the silicon wafer drying device is the silicon wafer drying device according to any one of claims 1 to 5.
9. The texturizing silicon wafer post-processing system according to claim 8, further comprising:
and the slow pulling dehydration device is used for performing slow pulling dehydration on the silicon wafer after the surface passivation treatment and before the drying treatment are performed on the silicon wafer after the texturing.
10. A method for post-treating a textured silicon wafer, wherein the post-treatment of the textured silicon wafer is performed by using the textured silicon wafer post-treatment system of claim 8 or 9, and comprises the following steps:
placing the silicon wafer after texturing in the passivation device, and carrying out surface passivation treatment on the silicon wafer through passivation liquid medicine in the passivation device to remove an oxide layer on the surface of the silicon wafer; and
and placing the silicon wafer subjected to surface passivation treatment in the silicon wafer drying device, and drying the silicon wafer.
11. The method for post-treating textured silicon wafers according to claim 10, wherein the passivating solution is a hydrofluoric acid aqueous solution, and the mass ratio of hydrogen fluoride to water in the hydrofluoric acid aqueous solution is 1: (10-12).
12. The method for post-treating texture silicon wafers according to claim 11, wherein 150mL to 200mL of hydrofluoric acid is added to the hydrofluoric acid aqueous solution after every 320 to 400 wafers are passivated, and the deposits at the bottom of the passivation device groove are discharged.
13. The method for post-treating a texturized silicon wafer according to claim 11, wherein a passivating solution in the passivating device is circulated during the surface passivation of the silicon wafer, and the circulation flow rate of the passivating solution is 40L/min to 60L/min.
14. The method for post-treating texturized silicon wafers according to any one of claims 10 to 13, wherein drying said silicon wafers comprises the steps of:
and introducing hot air into the inner cavity of the hollow partition plate through the hot air supply device, wherein the hot air is blown out through the air blowing holes in the hollow partition plate and blown to the silicon wafer so as to dry the silicon wafer.
15. The method for post-treating texturized silicon wafers according to claim 14, further comprising the step of introducing a protective gas into the silicon wafer drying device during the drying of the silicon wafers, wherein the flow rate of the protective gas introduced is 2m 3 /h～4m 3 /h。
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