CN114808144A - Wet etching crystalline silicon inverted pyramid structure and positive pyramid structure texturing method - Google Patents
Wet etching crystalline silicon inverted pyramid structure and positive pyramid structure texturing method Download PDFInfo
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- CN114808144A CN114808144A CN202210369051.6A CN202210369051A CN114808144A CN 114808144 A CN114808144 A CN 114808144A CN 202210369051 A CN202210369051 A CN 202210369051A CN 114808144 A CN114808144 A CN 114808144A
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- 238000000034 method Methods 0.000 title claims abstract description 24
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 18
- 238000001039 wet etching Methods 0.000 title claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 69
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 69
- 239000010703 silicon Substances 0.000 claims abstract description 69
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 238000002791 soaking Methods 0.000 claims abstract description 26
- 239000007788 liquid Substances 0.000 claims abstract description 6
- 239000013078 crystal Substances 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 70
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 claims description 31
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 claims description 30
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 30
- 239000011259 mixed solution Substances 0.000 claims description 27
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 16
- 229910017604 nitric acid Inorganic materials 0.000 claims description 16
- 239000000243 solution Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 6
- 241001424392 Lucia limbaria Species 0.000 abstract description 2
- 230000007547 defect Effects 0.000 abstract description 2
- 230000008021 deposition Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract description 2
- 238000004140 cleaning Methods 0.000 description 23
- 239000008367 deionised water Substances 0.000 description 23
- 229910021641 deionized water Inorganic materials 0.000 description 23
- 239000002923 metal particle Substances 0.000 description 23
- -1 polytetrafluoroethylene Polymers 0.000 description 23
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 23
- 239000004810 polytetrafluoroethylene Substances 0.000 description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 23
- 239000010949 copper Substances 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- 239000003929 acidic solution Substances 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 229910021418 black silicon Inorganic materials 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000003889 chemical engineering Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000543 intermediate Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
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Abstract
The invention discloses a wet etching method for a crystalline silicon inverted pyramid structure and a positive pyramid structure, which belongs to the technical field of new materials and solar energy and comprises the following steps: (1) putting the crystal silicon wafer with a clean surface into a container containing a treatment liquid; (2) reacting for 10 minutes at 20 ℃ to corrode the large-area micro-nano inverted pyramid structure suede on the surface of the silicon wafer; (3) reacting for 20 minutes at 20 ℃, and corroding a large-area micro-nano regular pyramid structure suede on the surface of the silicon wafer; (4) and soaking the corroded silicon wafer in aqua regia solution to remove the residual metal on the surface. The silicon wafer surface corroded by the method has extremely small copper deposition amount, and the corroded micro-nano inverted pyramid structure has the advantages of macroscopically uniform structure, smooth microscopic surface and few defects, so the method has wide application prospect in the fields of solar cells and the like.
Description
Technical Field
The invention belongs to the technical field of new materials and solar energy, and particularly relates to a wet etching method for texturing a crystalline silicon inverted pyramid structure and a positive pyramid structure.
Background
The crystalline silicon wet chemical corrosion can technically realize the preparation of various silicon micro-nano structures and has an important position in many industrial systems. The pyramid array etched on the crystalline silicon has a great influence on the photoelectric conversion efficiency of the solar cell. However, the current scientific research for solar cells in the last half century indicates that the conventional pyramid array preparation method is limited to the preparation with inorganic or organic alkali solution [ see: chinese patent CN201310562781.9] or tetramethylammonium hydroxide etching solution [ see: chinese patent ZL200410017032.9], and the use of acidic hydrofluoric acid solution can not etch the regular pyramid array on the silicon surface. Lu et al propose a method of combining metal catalyzed etching with wet etching with acidic hydrofluoric acid solution to prepare an inverted pyramid structure on the silicon surface. Toor and Cao et al also used copper-containing acidic solutions to prepare inverted pyramid structures. The subsequent method for preparing the inverted pyramid structure by the copper ion acidic solution is gradually improved. However, the method deposits a large amount of copper, which belongs to deep-level impurities, and causes large carrier recombination, thereby affecting photoelectric conversion efficiency, and the waste liquid is not environment-friendly. [ see: lu.and A.R.Barron, Anti-reflection layers fabricated by a one-step coater-associated chemical etching with inverted vertical structures inter-mediate between treating and nanopore-type black silicon, J.Mater.chem.A., 2014,2, 12043-12052; toor, J.Oh and H.M.Branz, effective nanostructured 'black' Silicon solar cell by coater-catalyzed metal-Assisted engineering, prog.Photostaics: Res.Appl.,2015,23, 1375-1380 and Y.Cao, Y.R.ZHou, F.Z.Liu, Y.Q.ZHou, Y.Zhang, Y.Liu and Y.K.Guo, progess and Mechanism of Cu Assisted Chemical engineering of Silicon in a Low Cu2+ concentation Region, ECS J.Solid State science 2015, Tec. 336, 4,331, 336 ]. However, the method is easy to deposit a large amount of copper nanoparticles on the silicon surface in the etching process, and the etched inverted pyramid has large size and rough surface and does not play a good role in reducing the reflectivity.
Disclosure of Invention
The invention aims to provide a method for texturing a crystalline silicon inverted pyramid structure and a positive pyramid structure by wet etching, aiming at the existing problems.
The invention is realized by the following technical scheme:
a wet etching method for texturing an inverted pyramid structure and a positive pyramid structure of crystalline silicon comprises the following steps:
(1) putting the crystal silicon wafer with a clean surface into a container containing a treatment liquid;
(2) reacting for 10 minutes at 20 ℃ to corrode the large-area micro-nano inverted pyramid structure suede on the surface of the silicon wafer;
(3) reacting for 20 minutes at 20 ℃, and corroding a large-area micro-nano regular pyramid structure suede on the surface of the silicon wafer;
(4) and soaking the corroded silicon wafer in aqua regia solution to remove the residual metal on the surface.
Further, the crystalline silicon wafer in the step (1) is one of a monocrystalline silicon wafer and a quasi-monocrystalline silicon wafer.
Further, the treatment liquid in the step (1) is a mixed solution of copper nitrate, nitric acid and hydrofluoric acid.
Furthermore, the concentration of the copper nitrate is 0.005-0.5mol/L, the concentration of the nitric acid is 0.1-1mol/L, and the concentration of the hydrofluoric acid is 0.5-10 mol/L.
Further, the treatment liquid in the step (1) is a mixed solution of copper nitrate, ferric nitrate and hydrofluoric acid.
Furthermore, the concentration of the copper nitrate is 0.005-0.5mol/L, the concentration of the ferric nitrate is 0.05-3mol/L, and the concentration of the hydrofluoric acid is 0.5-10 mol/L.
Further, the large-area micro-nano inverted pyramid textured surface obtained by corrosion in the step (2) and the regular pyramid structured textured surface obtained by corrosion in the step (3) can be used for industrial preparation of the silicon solar cell.
Compared with the prior art, the invention has the following advantages:
by understanding metal catalytic etching, the method researches a novel method for preparing the texture of the inverted pyramid structure and the regular pyramid structure on the surface of the monocrystalline silicon (N type and P type) with application prospect in the hydrofluoric acid solution texture preparation method. The silicon wafer surface corroded by the method has extremely small copper deposition amount, and the corroded micro-nano inverted pyramid structure has macroscopically uniform structure, smooth microscopic surface and few defects, so the method has wide application prospect in the fields of solar cells and the like.
Drawings
FIG. 1 is a scanning electron microscope topography of an inverted pyramid array fabricated on the (100) crystal plane of single crystal silicon in accordance with the present application;
FIG. 2 is a scanning electron microscope topography of an array of positive pyramids prepared on the (100) crystal plane of single crystal silicon according to the present application.
Detailed Description
According to the invention, anisotropic corrosion of silicon is realized in hydrofluoric acid solution, and large-area micro-nano inverted pyramid structures and regular pyramid structures can be prepared on the surface of crystalline silicon (100). The invention is further illustrated by the following examples:
example 1
Putting the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing a mixed solution of 0.5mol/L copper nitrate, 1mol/L nitric acid and 10mol/L hydrofluoric acid for reacting for 10 minutes at 20 ℃, then putting the corroded silicon piece into aqua regia for soaking for 10 minutes to remove residual metal particles on the surface of the silicon, and cleaning with deionized water.
Example 2
Putting the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing a mixed solution of 0.5mol/L copper nitrate, 0.5mol/L nitric acid and 1mol/L hydrofluoric acid for reacting for 10 minutes at 20 ℃, then putting the corroded silicon piece into aqua regia for soaking for 10 minutes to remove residual metal particles on the surface of the silicon, and cleaning with deionized water.
Example 3
Putting the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing a mixed solution of 0.5mol/L copper nitrate, 0.3mol/L nitric acid and 10mol/L hydrofluoric acid for reacting for 10 minutes at 20 ℃, then putting the corroded silicon piece into aqua regia for soaking for 10 minutes to remove residual metal particles on the surface of the silicon, and cleaning with deionized water.
Example 4
Putting the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing a mixed solution of 0.5mol/L copper nitrate, 0.1mol/L nitric acid and 10mol/L hydrofluoric acid for reacting for 10 minutes at 20 ℃, then putting the corroded silicon piece into aqua regia for soaking for 10 minutes to remove residual metal particles on the surface of the silicon, and cleaning with deionized water.
Example 5
Putting the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing a mixed solution of 0.05mol/L copper nitrate, 1mol/L nitric acid and 10mol/L hydrofluoric acid for reacting for 10 minutes at 20 ℃, then putting the corroded silicon piece into aqua regia for soaking for 10 minutes to remove residual metal particles on the surface of the silicon, and cleaning with deionized water.
Example 6
Putting the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing a mixed solution of 0.05mol/L copper nitrate, 0.5mol/L nitric acid and 10mol/L hydrofluoric acid for reacting for 10 minutes at 20 ℃, then putting the corroded silicon piece into aqua regia for soaking for 10 minutes to remove residual metal particles on the surface of the silicon, and cleaning with deionized water.
Example 7
Putting the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing a mixed solution of 0.05mol/L copper nitrate, 0.1mol/L nitric acid and 10mol/L hydrofluoric acid for reacting for 20 minutes at 20 ℃, then putting the corroded silicon piece into aqua regia for soaking for 10 minutes to remove residual metal particles on the surface of the silicon, and cleaning with deionized water.
Example 8
Putting the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing a mixed solution of 0.25mol/L copper nitrate, 1mol/L nitric acid and 10mol/L hydrofluoric acid for reacting for 10 minutes at 20 ℃, then putting the corroded silicon piece into aqua regia for soaking for 10 minutes to remove residual metal particles on the surface of the silicon, and cleaning with deionized water.
Example 9
Putting the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing a mixed solution of 0.25mol/L copper nitrate, 0.5mol/L nitric acid and 10mol/L hydrofluoric acid for reacting for 10 minutes at 20 ℃, then putting the corroded silicon piece into aqua regia for soaking for 10 minutes to remove residual metal particles on the surface of the silicon, and cleaning with deionized water.
Example 10
Putting the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing a mixed solution of 0.25mol/L copper nitrate, 0.1mol/L nitric acid and 10mol/L hydrofluoric acid for reacting for 20 minutes at 20 ℃, then putting the corroded silicon piece into aqua regia for soaking for 10 minutes to remove residual metal particles on the surface of the silicon, and cleaning with deionized water.
Example 11
Putting the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing a mixed solution of 0.5mol/L copper nitrate, 1mol/L nitric acid and 5mol/L hydrofluoric acid for reacting for 10 minutes at 20 ℃, then putting the corroded silicon piece into aqua regia for soaking for 10 minutes to remove residual metal particles on the surface of the silicon, and cleaning with deionized water.
Example 12
Putting the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing a mixed solution of 0.5mol/L copper nitrate, 1mol/L nitric acid and 1mol/L hydrofluoric acid for reacting for 10 minutes at 20 ℃, then putting the corroded silicon piece into aqua regia for soaking for 10 minutes to remove residual metal particles on the surface of the silicon, and cleaning with deionized water.
Example 13
Putting the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing a mixed solution of 0.5mol/L copper nitrate, 3mol/L ferric nitrate and 10mol/L hydrofluoric acid for reacting for 10 minutes at 20 ℃, then putting the corroded silicon piece into aqua regia for soaking for 10 minutes to remove residual metal particles on the surface of the silicon, and cleaning with deionized water.
Example 14
Putting the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing a mixed solution of 0.5mol/L copper nitrate, 1mol/L ferric nitrate and 10mol/L hydrofluoric acid for reacting for 10 minutes at 20 ℃, then putting the corroded silicon piece into aqua regia for soaking for 10 minutes to remove residual metal particles on the surface of the silicon, and cleaning with deionized water.
Example 15
Putting the cleaned monocrystalline silicon wafer into a polytetrafluoroethylene container containing 0.5mol/L copper nitrate, 3mol/L ferric nitrate and 10mol/L hydrofluoric acid mixed solution for reacting for 20 minutes at 20 ℃, then putting the corroded silicon wafer into aqua regia for soaking for 10 minutes to remove metal particles remained on the surface of the silicon, and cleaning with deionized water.
Example 16
Putting the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing a mixed solution of 0.5mol/L copper nitrate, 0.5mol/L ferric nitrate and 10mol/L hydrofluoric acid for reacting for 10 minutes at 20 ℃, then putting the corroded silicon piece into aqua regia for soaking for 10 minutes to remove residual metal particles on the surface of the silicon, and cleaning with deionized water.
Example 17
Putting the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing a mixed solution of 0.5mol/L copper nitrate, 3mol/L ferric nitrate and 10mol/L hydrofluoric acid for reacting for 10 minutes at 20 ℃, then putting the corroded silicon piece into aqua regia for soaking for 10 minutes to remove residual metal particles on the surface of the silicon, and cleaning with deionized water.
Example 18
Putting the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing a mixed solution of 0.5mol/L copper nitrate, 3mol/L ferric nitrate and 5mol/L hydrofluoric acid for reacting for 10 minutes at 20 ℃, then putting the corroded silicon piece into aqua regia for soaking for 10 minutes to remove residual metal particles on the surface of the silicon, and cleaning with deionized water.
Example 19
Putting the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing a mixed solution of 0.05mol/L copper nitrate, 3mol/L ferric nitrate and 10mol/L hydrofluoric acid for reacting for 10 minutes at 20 ℃, then putting the corroded silicon piece into aqua regia for soaking for 10 minutes to remove residual metal particles on the surface of the silicon, and cleaning with deionized water.
Example 20
Putting the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing a mixed solution of 0.05mol/L copper nitrate, 3mol/L ferric nitrate and 10mol/L hydrofluoric acid for reacting for 20 minutes at 20 ℃, then putting the corroded silicon piece into aqua regia for soaking for 10 minutes to remove residual metal particles on the surface of the silicon, and cleaning with deionized water.
Example 21
Putting the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing a mixed solution of 0.05mol/L copper nitrate, 3mol/L ferric nitrate and 10mol/L hydrofluoric acid for reacting for 10 minutes at 20 ℃, then putting the corroded silicon piece into aqua regia for soaking for 10 minutes to remove residual metal particles on the surface of the silicon, and cleaning with deionized water.
Example 22
Putting the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing a mixed solution of 0.5mol/L copper nitrate, 1mol/L ferric nitrate and 5mol/L hydrofluoric acid for reacting for 10 minutes at 20 ℃, then putting the corroded silicon piece into aqua regia for soaking for 10 minutes to remove residual metal particles on the surface of the silicon, and cleaning with deionized water.
Example 23
Putting the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing a mixed solution of 0.5mol/L copper nitrate, 1mol/L ferric nitrate and 5mol/L hydrofluoric acid for reacting for 20 minutes at 20 ℃, then putting the corroded silicon piece into aqua regia for soaking for 10 minutes to remove residual metal particles on the surface of the silicon, and cleaning with deionized water.
Claims (7)
1. A wet etching crystalline silicon inverted pyramid structure and positive pyramid structure texturing method is characterized by comprising the following steps:
(1) putting the crystal silicon wafer with a clean surface into a container containing a treatment liquid;
(2) reacting for 10 minutes at 20 ℃ to corrode the large-area micro-nano inverted pyramid structure suede on the surface of the silicon wafer;
(3) reacting for 20 minutes at 20 ℃, and corroding a large-area micro-nano regular pyramid structure suede on the surface of the silicon wafer;
(4) and soaking the corroded silicon wafer in aqua regia solution to remove the residual metal on the surface.
2. The method for texturing the crystalline silicon inverted pyramid structure and the positive pyramid structure by wet etching according to claim 1, wherein the crystalline silicon wafer in the step (1) is one of a monocrystalline silicon wafer and a quasi-monocrystalline silicon wafer.
3. The method for texturing the inverted pyramid structure and the regular pyramid structure of the crystalline silicon by wet etching according to claim 1, wherein the treatment solution in the step (1) is a mixed solution of copper nitrate, nitric acid and hydrofluoric acid.
4. The method for texturing the inverted pyramid structure and the regular pyramid structure of the crystalline silicon by wet etching according to claim 3, wherein the concentration of the copper nitrate is 0.005-0.5mol/L, the concentration of the nitric acid is 0.1-1mol/L, and the concentration of the hydrofluoric acid is 0.5-10 mol/L.
5. The method for texturing the inverted pyramid structure and the regular pyramid structure of the crystalline silicon by wet etching according to claim 1, wherein the treatment solution in the step (1) is a mixed solution of copper nitrate, ferric nitrate and hydrofluoric acid.
6. The method for texturing the inverted pyramid structure and the regular pyramid structure of the crystalline silicon by wet etching according to claim 5, wherein the concentration of the copper nitrate is 0.005-0.5mol/L, the concentration of the ferric nitrate is 0.05-3mol/L, and the concentration of the hydrofluoric acid is 0.5-10 mol/L.
7. The method for texturing the crystalline silicon inverted pyramid structure and the regular pyramid structure by wet etching according to claim 1, wherein the large-area micro-nano inverted pyramid textured surface obtained by etching in the step (2) and the regular pyramid structure textured surface obtained by etching in the step (3) can be used for industrial preparation of silicon solar cells.
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| CN101864599A (en) * | 2010-05-31 | 2010-10-20 | 江西赛维Ldk太阳能高科技有限公司 | Preparation method of suede of silicon wafer |
| CN102270695A (en) * | 2010-12-25 | 2011-12-07 | 河南科技大学 | Method for making V-shaped groove texture surface on surface of monocrystalline silicon solar cell |
| CN104195645A (en) * | 2014-08-06 | 2014-12-10 | 中国科学院物理研究所 | Acidic texturing solution for etching solar cell silicon wafer, texturing method, solar cell silicon wafer and manufacturing method of solar cell silicon wafer |
| CN105405755A (en) * | 2015-10-30 | 2016-03-16 | 中国科学院物理研究所 | Acidic texturing liquid for silicon wafer pyramid texturing, texturing method and silicon wafer formed in texturing manner through adoption of texturing method |
| WO2017201702A1 (en) * | 2016-05-26 | 2017-11-30 | 南京中云新材料有限公司 | Monocrystalline silicon wafer surface texturing method |
| CN108538720A (en) * | 2017-03-06 | 2018-09-14 | 北京师范大学 | A kind of crystalline silicon anisotropic wet caustic solution |
| CN108221056A (en) * | 2017-11-24 | 2018-06-29 | 北京师范大学 | A kind of silicon micro-nano matte preparation method |
| CN109599458A (en) * | 2018-11-01 | 2019-04-09 | 北京师范大学 | Crystal silicon chip surface pyramid flannelette preparation method |
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