CN114807853B - Preparation method of conductive film layer, conductive film layer and light-emitting diode - Google Patents
Preparation method of conductive film layer, conductive film layer and light-emitting diode Download PDFInfo
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- CN114807853B CN114807853B CN202210284654.6A CN202210284654A CN114807853B CN 114807853 B CN114807853 B CN 114807853B CN 202210284654 A CN202210284654 A CN 202210284654A CN 114807853 B CN114807853 B CN 114807853B
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5873—Removal of material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5886—Mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
Abstract
The invention discloses a preparation method of a conductive film layer, the conductive film layer and a light-emitting diode, which are applied to the light-emitting diode and relate to the technical field of photoelectricity, wherein the preparation method of the conductive film layer comprises the following steps: providing an LED epitaxial structure; an ITO film layer is plated on the LED epitaxial structure through a vacuum sputtering coating process; coating a mask layer on the surface of the ITO film layer; printing an ITO film layer through a soft template with patterns, and performing exposure treatment to solidify an effective pattern area on the surface of the ITO film layer; removing the non-effective pattern area of the uncured ITO film layer to form an ITO film layer with an effective pattern; and placing the ITO film layer with the effective pattern in the liquid medicine to remove the redundant mask layer so as to form the conductive film layer. The invention can solve the technical problems of low precision, poor uniformity and high cost in the prior art.
Description
Technical Field
The invention relates to the technical field of photoelectricity, in particular to a preparation method of a conductive film layer and a light-emitting diode.
Background
Along with the continuous development of science and technology, a Light Emitting Diode (LED) has been applied to various fields of life, the LED has advantages of high energy efficiency, energy saving, environmental protection, color rendering and fast response speed, and the like, and gradually replaces an incandescent lamp, and a conductive film layer of the LED is mainly made of an ITO conductive film, wherein ITO is an english abbreviation of indium tin oxide, and the ITO conductive film has excellent conductivity and good light transmittance, and is widely applied to an electrode of the LED.
The current common conductive film layer of the light emitting diode is an ITO conductive film layer plated by PVD sputtering, wherein, physical vapor deposition (Physical Vapor Deposition, PVD) refers to a technology of vaporizing a material source (solid or liquid) surface into gaseous atoms or molecules or partially ionizing into ions by a physical method under vacuum condition, and depositing a film with a certain special function on the substrate surface by a low-pressure gas (or plasma) process. The conductive film layer adopts a PVD vacuum sputtering mode to plate the ITO conductive film layer, after the patterns are solidified by an exposure machine, the required patterns are manufactured by adopting a wet etching mode, the exposure machine can only be used for forming the patterns with the width of about 2 microns, the nano-level patterns can not be formed, the photoelectric performance and the resolution of the light-emitting diode are seriously limited, the uniformity of the patterns manufactured by the exposure machine is poor, the manufacturing cost is high, and the further development of the ITO conductive film layer is directly influenced.
Therefore, the existing conductive film layer has the technical problems of low precision, poor uniformity and high cost.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a preparation method of a conductive film layer and a light-emitting diode, and aims to solve the technical problems of low precision, poor uniformity and high cost in the prior art.
The first aspect of the present invention provides a method for preparing a conductive film layer, which is applied to a light emitting diode, wherein the method for preparing the conductive film layer includes:
providing an LED epitaxial structure;
an ITO film layer is plated on the LED epitaxial structure through a vacuum sputtering coating process;
coating a mask layer on the surface of the ITO film layer;
printing an ITO film layer through a soft template with patterns, and performing exposure treatment to solidify an effective pattern area on the surface of the ITO film layer;
removing the non-effective pattern area of the uncured ITO film layer to form an ITO film layer with an effective pattern;
and placing the ITO film layer with the effective pattern in liquid medicine to remove the redundant mask layer so as to form a conductive film layer.
Compared with the prior art, the invention has the beneficial effects that: according to the preparation method of the conductive film layer, the high-resolution graph with the nanometer line width is prepared through a stamping mode, specifically, the ITO film layer is coated with the mask layer, the ITO film layer with the effective pattern is stamped and exposed through the soft template with the pattern to form the ITO film layer with the effective pattern, then the non-effective pattern area of the ITO layer is removed, the redundant mask layer is removed, the conductive film layer is formed, compared with the conductive film layer with the micrometer line width prepared by the exposure machine, the conductive film with the nanometer line width with high precision and good uniformity can be formed through simple stamping, the reliability is high, the photoelectric performance and the resolution of the conductive film layer are improved, the stamping technology cost is low, and the technical problems of low precision, poor uniformity and high cost are solved.
According to one aspect of the above technical solution, the step of plating the ITO thin film layer on the LED epitaxial structure by a vacuum sputtering coating process specifically includes:
setting the vapor deposition rate to beThe evaporation temperature is set to be 150-300 ℃ and the vacuum degree is adjusted to be 1 multiplied by 10 -3 -1×10 -5 pa, evaporating an ITO film layer with the thickness of 300-2000 mu m on the LED epitaxial structure;
and (3) carrying out rapid annealing treatment on the ITO film layer, wherein the annealing temperature is 400-600 ℃.
According to one aspect of the above technical solution, the step of coating a mask layer on the surface of the ITO thin film layer specifically includes:
and coating photoresist with the thickness of 0.05-2.8 mu m on the surface of the ITO film layer to serve as a mask layer.
According to one aspect of the above technical solution, the step of printing the ITO thin film layer by a patterned soft template and performing exposure treatment to cure the effective pattern area on the surface of the ITO thin film layer specifically includes:
setting the temperature of an imprinting machine to 40-80 ℃, moving the ITO film layer towards the direction of the soft template with the pattern for 30-40mm, and finishing first imprinting, wherein the first imprinting pressure is set to 0.5-3Kpa;
the ITO film layer is moved towards the direction of the soft template with the pattern for 10-20mm, and the second printing is completed, wherein the second printing pressure is set to be 10-20Kpa, and the sum of the two times of printing time is 30-120s;
and exposing the ITO film layer after the printing is finished for 20-60s to solidify the effective pattern area on the surface of the ITO film layer.
According to one aspect of the above technical solution, the step of removing the non-effective pattern area of the uncured ITO thin film layer to form the effective patterned ITO thin film layer specifically includes:
removing the mask layer of the non-effective pattern area of the ITO film layer by using a developing solution;
etching the area not covered by the mask layer to form an ITO film layer with an effective pattern.
According to an aspect of the above technical solution, the etching method is a wet etching process or a dry etching process.
According to one aspect of the above technical solution, the step of disposing the ITO thin film layer with the effective pattern in the liquid medicine to remove the redundant mask layer, so as to form the conductive film layer, specifically includes:
and (3) placing the ITO film layer with the effective pattern into the liquid medicine to remove the redundant mask layer so as to form the conductive film layer with the line width of 0-50 nm.
According to an aspect of the above technical solution, the liquid medicine is EKC solution or SPM solution.
The second aspect of the invention provides a conductive film layer, which is prepared by the preparation method of the conductive film layer in the technical scheme.
A third aspect of the present invention provides a light emitting diode, where the light emitting diode includes the conductive film layer according to the above technical solution, and further includes a metal layer disposed on the conductive film layer.
Drawings
The foregoing and/or additional aspects and advantages of the invention will become apparent and may be better understood from the following description of embodiments taken in conjunction with the accompanying drawings in which:
fig. 1 is a flowchart of a method for producing a conductive film in a first embodiment of the present invention;
fig. 2 is a schematic structural view of a conductive film according to a second embodiment of the present invention at a first viewing angle;
fig. 3 is a schematic structural view of a conductive film according to a second embodiment of the present invention at a second viewing angle;
fig. 4 is a schematic structural diagram of a light emitting diode according to a third embodiment of the present invention;
description of the drawings element symbols:
a conductive film layer 10, a cylinder 11, a sapphire substrate 20, an N-type GaN layer 30, a P-type GaN layer 40, an insulating film layer 50, and a metal layer 60.
Detailed Description
In order to make the objects, features and advantages of the present invention more comprehensible, embodiments accompanied with figures are described in detail below. Several embodiments of the invention are presented in the figures. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "mounted" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," "upper," "lower," and the like are used herein for descriptive purposes only and not to indicate or imply that the apparatus or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be construed as limiting the invention.
In the present invention, unless explicitly stated and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
Example 1
Referring to fig. 1, a method for preparing a conductive film layer according to a first embodiment of the present invention is applied to a light emitting diode, and the method includes steps S10-S14:
step S10, providing an LED epitaxial structure;
step S11, an ITO film layer is plated on the LED epitaxial structure through a vacuum sputtering coating process;
specifically, the vapor deposition rate of the vapor deposition machine is set to beThe evaporation temperature is set to be 150-300 ℃ and the vacuum degree is adjusted to be 1 multiplied by 10 -3 -1×10 -5 pa, evaporating an ITO film layer with the thickness of 300-2000 mu m on the LED epitaxial structure; the thickness and uniformity of the ITO film layer are controllable by a vacuum sputtering coating method, so that the ITO film layer with good compactness is formed.
And (3) carrying out rapid annealing treatment on the ITO film layer, wherein the annealing temperature is 400-600 ℃. Through high-temperature annealing treatment, the structure in the ITO film layer can be rearranged to form a stable ITO film layer with high quality, so that the performance of the ITO film layer is improved, and the performance of the conductive film layer is further improved. The annealing environment can be selected in a nitrogen atmosphere, and nitrogen is used as inert gas, so that the performance of the ITO film layer is not affected.
Step S12, coating a mask layer on the surface of the ITO film layer;
the mask layer is used for preventing etching corrosion, and the mask layer is made of photoresist, wherein the photoresist is a corrosion inhibitor etching film material with the solubility changed through irradiation or radiation of specific light. Photoresists are classified into two major classes, positive and negative, according to the images they form. In the semiconductor process, after the mask layer is exposed and developed, the exposed part is dissolved, the unexposed part is left, and the mask layer is made of positive photoresist. If the exposed portion is left and the unexposed portion is dissolved, the mask layer is made of negative photoresist. In this embodiment, the mask layer is a negative photoresist, and the exposed mask layer is left.
Specifically, photoresist with the thickness of 0.05-2.8 mu m is coated on the surface of the ITO film to be used as a mask layer. So that the subsequent development etching forms the required pattern.
Step S13, the ITO film layer is stamped through a soft template with patterns, and exposure treatment is carried out to solidify an effective pattern area on the surface of the ITO film layer;
the pattern can be various regular or irregular patterns according to the requirement of the semiconductor process, and in the embodiment, the soft template with the pattern is rectangular, and a plurality of holes are uniformly arranged at intervals on the soft template. The diameter of the holes can be set according to the requirements of the semiconductor process, and in the embodiment, the holes are set to be 0-50nm so as to achieve a conductive film layer with the line width of 0-50 nm. The manufacturing method of the soft template comprises the following steps: dissolving 50-100g of soft template material, stirring for 20-60min at 100-150 ℃ to eliminate bubbles for 10-50 times, pouring the solution into a soft template mold, cooling to room temperature, and standing for 4-8h to form the soft template.
In addition, the ITO film layer is printed by the soft template with patterns, the ITO film layer can penetrate through the holes to form cylinders which are uniformly arranged at intervals, the mask layer adopts negative photoresist, after exposure, the mask layer on the cylinders is exposed and fixed on the ITO film layer to form cured effective pattern areas.
Specifically, the temperature of an imprinting machine is set to be 40-80 ℃, an ITO film layer is moved for 30-40mm towards a direction of a soft template with patterns, and first imprinting is completed, wherein the first imprinting pressure is set to be 0.5-3Kpa;
the ITO film layer is moved towards the direction of the soft template with the pattern for 10-20mm, and the second printing is completed, wherein the second printing pressure is set to be 10-20Kpa, and the sum of the two times of printing time is 30-120s; the arrangement of the two times of stamping forms cylinders with line widths of 0-50nm and arranged at uniform intervals, the resolution of the conductive film layer can be improved through the arrangement of the nanometer line widths, and meanwhile, the shape and the height of the cylinders are more uniform through the two times of stamping, so that the uniformity of the patterns of the ITO film layer is improved, and the uniformity of the conductive film layer is improved. Meanwhile, the stamping technology is simple to operate, the manufacturing cost is low, and the cost is saved.
And exposing the ITO film layer after the printing is finished for 20-60s to solidify the effective pattern area on the surface of the ITO film layer. After exposure, the photoresist on the cylinder is exposed and fixed on the ITO film layer to form a cured effective pattern area.
Step S14, removing the non-effective pattern area of the uncured ITO film layer to form an ITO film layer with an effective pattern;
specifically, a mask layer of a non-effective pattern area of the ITO film layer is removed by using a developing solution; the developing solution is an organic solvent, and dissolves the mask layer which is not exposed to remove the mask layer in the area with the non-effective pattern, so that the subsequent etching is facilitated to form the ITO film layer with the effective pattern.
Etching the area not covered by the mask layer to form an ITO film layer with an effective pattern. The etching method is a wet etching process or a dry etching process, the wet etching process is to soak the ITO film layer in a solution mixed by hydrochloric acid and nitric acid so as to etch the ITO film layer area which is not covered by the mask layer, and the etching depth is controlled according to the regulation of the soaking time required by the semiconductor process. And the dry etching process is to etch the ITO film layer area not covered by the mask layer by introducing mixed gas such as chlorine, boron trichloride and the like, and the etching concentration is controlled according to the time and the dosage of the introduced gas required by the semiconductor process. And etching to remove the ITO film layer in the non-effective pattern area so as to enable the ITO film layer to form a conductive film with a specific pattern, thereby improving the performance and photoelectric effect of the conductive film.
And S15, placing the ITO film layer with the effective pattern in the liquid medicine to remove the redundant mask layer so as to form a conductive film layer.
Specifically, the ITO film layer with the effective pattern is placed in the liquid medicine to remove the redundant mask layer, so as to form the conductive film layer with the line width of 0-50 nm. The conductive film layer with the nanometer line width is formed in a stamping mode, compared with the conductive film layer with the micron line width prepared by a traditional exposure machine, the precision and resolution of the conductive film layer are greatly improved, meanwhile, the preparation of the conductive film layer is simple and stable, the manufacturing cost is low, the high conductivity of the conductive film layer is maintained, and the great-amplitude photoelectric performance of the conductive film layer is improved. The medicine liquid is EKC solution or SPM solution, wherein the EKC solution comprises mixed solution of hydroxylamine, 2- (2-aminoethoxy) ethanol, catechol and water, and the SPM solution comprises mixed solution of sulfuric acid and hydrogen peroxide. The exposed photoresist on the ITO film layer cylinder is removed by liquid medicine.
Compared with the prior art, the preparation method of the conductive film layer provided by the embodiment has the beneficial effects that: according to the preparation method of the conductive film layer, the high-resolution graph with the nanometer line width is prepared through a stamping mode, specifically, the ITO film layer is coated with the mask layer, the ITO film layer with the effective pattern is stamped and exposed through the soft template with the pattern to form the ITO film layer with the effective pattern, then the non-effective pattern area of the ITO layer is removed, the redundant mask layer is removed, the conductive film layer is formed, compared with the conductive film layer with the micrometer line width prepared by the exposure machine, the conductive film with the nanometer line width with high precision and good uniformity can be formed through simple stamping, the reliability is high, the photoelectric performance and the resolution of the conductive film layer are improved, the stamping technology cost is low, and the technical problems of low precision, poor uniformity and high cost are solved.
Example two
Referring to fig. 2-3, a conductive film layer according to a second embodiment of the present invention is shown, and the conductive film layer is prepared by the method for preparing a conductive film layer according to the above embodiment.
The thickness of the ITO of the cylindrical body of the conductive film layer 10 is the original thickness of the evaporated ITO film layer, the thickness is 300-2000 μm, the etched thickness is 1/2-3/4 of the original thickness, which will form a cylindrical body 11 with inconsistent height, the height of the cylindrical body 11 is 1/4-1/2 of the original thickness, and in the preset height range, the performance of the conductive film layer 10 is not affected.
The conductive film layer 10 is formed with 0-50nm diameter cylinders 11 uniformly distributed at intervals to form high-resolution microscopic patterns of uniformly distributed nanometer line width, which has high precision, good uniformity and low manufacturing cost, and maintains the high conductivity of ITO, thereby greatly improving the photoelectric performance of the conductive film layer 10.
Compared with the prior art, the conductive film layer that this embodiment provided, beneficial effect lies in: the conductive film layer provided by the invention forms high-resolution microscopic patterns with uniformly distributed nanometer line widths, has high precision and good uniformity, and maintains the high conductivity of ITO, thereby greatly improving the photoelectric performance of the conductive film layer, and solving the technical problems of low precision, poor uniformity and high cost.
Example III
Referring to fig. 4, a light emitting diode according to a third embodiment of the present invention is shown, and the light emitting diode includes the conductive film layer in the above embodiment, and further includes a metal layer disposed on the conductive film layer.
In this embodiment, the light emitting diode sequentially includes an LED epitaxial structure, a conductive film layer 10 and a metal layer 60, wherein the LED epitaxial structure includes a sapphire substrate 20, a P-type GaN layer 30, an N-type GaN layer 40 and an insulating film layer 50. The insulating film layer 50 is made of SiO 2 、SiN X 、TiO X 、Al 2 O 3 One of or any combination thereof, and the material of the metal layer 60 is one of or any combination of Cr, au, pt, ni, ti, al, ag, mg.
The conductive film layer 10 forms patterns with high resolution and nanoscale linewidth by using a printing technology, and improves the light output and voltage drop of the light-emitting diode, thereby improving the light extraction rate of the light-emitting diode.
Compared with the prior art, the light-emitting diode provided by the embodiment has the beneficial effects that: the light-emitting diode provided by the invention adopts the conductive film layer with high resolution and nanoscale line width patterns, has high precision and good uniformity, improves the light output and voltage reduction of the light-emitting diode, and improves the light extraction rate of the light-emitting diode. Thus solving the technical problems of low precision, poor uniformity and high cost which are commonly existed.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing examples illustrate only a few embodiments of the invention, and are described in detail, but are not to be construed as limiting the scope of the invention. It should be noted that it is possible for those skilled in the art to make several variations and modifications without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (8)
1. The preparation method of the conductive film layer is applied to the light-emitting diode and is characterized by comprising the following steps of:
providing an LED epitaxial structure;
an ITO film layer is plated on the LED epitaxial structure through a vacuum sputtering coating process;
coating a mask layer on the surface of the ITO film layer;
the ITO thin film layer is stamped through a soft template with patterns, and exposure treatment is carried out to solidify an effective pattern area on the surface of the ITO thin film layer, wherein the soft template is rectangular, a plurality of holes which are uniformly arranged at intervals are formed in the soft template, the ITO thin film layer can penetrate through the holes to form cylinders which are uniformly arranged at intervals, after exposure, a mask layer on the cylinders is exposed and fixed on the ITO thin film layer, and the solidified effective pattern area is formed, and the method comprises the following steps:
setting the temperature of the imprinting machine to 40-80 ℃, moving the ITO film layer towards the direction of the soft template with patterns for 30-40mm to finish the first imprinting, wherein the first imprinting pressure is set to 0.5-3Kpa,
the ITO film layer is moved towards the direction of the soft template with the pattern for 10-20mm, the second stamping is completed, wherein the second stamping pressure is set to be 10-20Kpa, the total time of the two stamping is 30-120s,
exposing the ITO film layer after printing for 20-60s to solidify the effective pattern area on the surface of the ITO film layer;
removing the non-effective pattern area of the uncured ITO film layer to form an effective pattern ITO film layer, comprising:
removing the mask layer of the non-effective pattern area of the ITO film layer by using a developing solution,
etching the area not covered by the mask layer to form an ITO film layer with an effective pattern;
and placing the ITO film layer with the effective pattern in liquid medicine to remove the redundant mask layer so as to form a conductive film layer.
2. The method for preparing a conductive film layer according to claim 1, wherein the step of plating the ITO thin film layer on the LED epitaxial structure by a vacuum sputtering coating process comprises:
setting the vapor deposition rate to beThe evaporation temperature is set to be 150-300 ℃ and the vacuum degree is adjusted to be 1 multiplied by 10 -3 -1×10 - 5 pa, evaporating an ITO film layer with the thickness of 300-2000 mu m on the LED epitaxial structure;
and (3) carrying out rapid annealing treatment on the ITO film layer, wherein the annealing temperature is 400-600 ℃.
3. The method for preparing a conductive film layer according to claim 1, wherein the step of coating a mask layer on the surface of the ITO thin film layer comprises:
and coating photoresist with the thickness of 0.05-2.8 mu m on the surface of the ITO film layer to serve as a mask layer.
4. The method of claim 1, wherein the etching method is a wet etching process or a dry etching process.
5. The method of manufacturing a conductive film layer according to claim 1, wherein the step of removing the unnecessary mask layer by placing the ITO thin film layer of the effective pattern in a liquid medicine to form the conductive film layer, specifically comprises:
and (3) placing the ITO film layer with the effective pattern into the liquid medicine to remove the redundant mask layer so as to form the conductive film layer with the line width of 0-50 nm.
6. The method of claim 5, wherein the chemical solution is EKC solution or SPM solution.
7. A conductive film layer, characterized in that the conductive film layer is prepared by the method for preparing a conductive film layer according to any one of claims 1 to 6.
8. A light emitting diode comprising the conductive film layer of claim 7, further comprising a metal layer disposed on the conductive film layer.
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| CN102214742A (en) * | 2011-06-02 | 2011-10-12 | 华中科技大学 | Method for preparing two-dimensional photonic crystal structure GaN (gallium nitride) based LED (light emitting diode) |
| CN111384286A (en) * | 2018-12-29 | 2020-07-07 | Tcl集团股份有限公司 | Quantum dot light-emitting diode and preparation method thereof |
| CN111987201A (en) * | 2019-05-22 | 2020-11-24 | 山东浪潮华光光电子股份有限公司 | Preparation method of GaAs-based light emitting diode chip |
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| US9081460B2 (en) * | 2011-05-20 | 2015-07-14 | Gwangju Institute Of Science And Technology | Electronic device, method for manufacturing the same and touch panel including the same |
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| CN102214742A (en) * | 2011-06-02 | 2011-10-12 | 华中科技大学 | Method for preparing two-dimensional photonic crystal structure GaN (gallium nitride) based LED (light emitting diode) |
| CN111384286A (en) * | 2018-12-29 | 2020-07-07 | Tcl集团股份有限公司 | Quantum dot light-emitting diode and preparation method thereof |
| CN111987201A (en) * | 2019-05-22 | 2020-11-24 | 山东浪潮华光光电子股份有限公司 | Preparation method of GaAs-based light emitting diode chip |
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