CN114792615A - 基片载置台和基片处理方法 - Google Patents

基片载置台和基片处理方法 Download PDF

Info

Publication number
CN114792615A
CN114792615A CN202210046574.7A CN202210046574A CN114792615A CN 114792615 A CN114792615 A CN 114792615A CN 202210046574 A CN202210046574 A CN 202210046574A CN 114792615 A CN114792615 A CN 114792615A
Authority
CN
China
Prior art keywords
substrate
main body
mounting surface
mounting table
mounting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202210046574.7A
Other languages
English (en)
Chinese (zh)
Inventor
边见笃
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN114792615A publication Critical patent/CN114792615A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
CN202210046574.7A 2021-01-25 2022-01-14 基片载置台和基片处理方法 Pending CN114792615A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-009775 2021-01-25
JP2021009775A JP2022113491A (ja) 2021-01-25 2021-01-25 基板載置台及び基板処理方法。

Publications (1)

Publication Number Publication Date
CN114792615A true CN114792615A (zh) 2022-07-26

Family

ID=82460248

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210046574.7A Pending CN114792615A (zh) 2021-01-25 2022-01-14 基片载置台和基片处理方法

Country Status (4)

Country Link
JP (1) JP2022113491A (ko)
KR (1) KR20220107941A (ko)
CN (1) CN114792615A (ko)
TW (1) TW202236492A (ko)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4597894B2 (ja) 2006-03-31 2010-12-15 東京エレクトロン株式会社 基板載置台および基板処理装置

Also Published As

Publication number Publication date
JP2022113491A (ja) 2022-08-04
KR20220107941A (ko) 2022-08-02
TW202236492A (zh) 2022-09-16

Similar Documents

Publication Publication Date Title
KR102030471B1 (ko) 리프트 핀 유닛 및 이를 구비하는 기판 지지 유닛
US8409995B2 (en) Substrate processing apparatus, positioning method and focus ring installation method
KR100636487B1 (ko) 기판 지지 장치 및 기판 디처킹 방법
JP2021192456A (ja) プラズマ処理装置
US20160035601A1 (en) Bake unit, substrate treating apparatus including the unit, and substrate treating method
JP6199638B2 (ja) プラズマ処理装置
US20070215049A1 (en) Transfer of wafers with edge grip
JP2008270721A (ja) 基板載置台及び基板処理装置
US8197638B2 (en) Semiconductor manufacturing device and method for manufacturing semiconductor devices
KR102640515B1 (ko) 플라즈마 처리 장치
US20040045813A1 (en) Wafer processing apparatus, wafer stage, and wafer processing method
KR20210004847A (ko) 기판 처리 장치 및 기판의 전달 방법
KR101117188B1 (ko) 기판 처리 장치
US7070661B2 (en) Uniform gas cushion wafer support
TW202109591A (zh) 製程套組的護套和溫度控制
JP6890085B2 (ja) 基板処理装置
TW202123333A (zh) 基板處理系統及邊緣環之更換方法
CN114792615A (zh) 基片载置台和基片处理方法
CN111033695A (zh) 内壁和基板处理装置
KR102622055B1 (ko) 에지 링의 패드 부착 방법 및 장치
KR20200121737A (ko) 기판 처리 장치
US20230307266A1 (en) Support unit and substrate treating apparatus
US20230073660A1 (en) Substrate processing apparatus
US20230070804A1 (en) Substrate processing apparatus
KR102278083B1 (ko) 기판 지지 유닛 및 이를 가지는 기판 처리 장치

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination