CN114792080B - Design method of broadband power amplifier chip - Google Patents
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- CN114792080B CN114792080B CN202210720428.8A CN202210720428A CN114792080B CN 114792080 B CN114792080 B CN 114792080B CN 202210720428 A CN202210720428 A CN 202210720428A CN 114792080 B CN114792080 B CN 114792080B
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- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/36—Circuit design at the analogue level
- G06F30/367—Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
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- H—ELECTRICITY
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- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H—ELECTRICITY
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- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/36—Indexing scheme relating to amplifiers the amplifier comprising means for increasing the bandwidth
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
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Abstract
The invention discloses a design method of a broadband power amplifier chip, belonging to the technical field of chip design and comprising the following steps: s1: extracting a component model of the over-resonance point; s2: performing equivalent replacement on the over-resonance point component model to obtain an equivalent circuit; s3: carrying out frequency point matching on the equivalent circuit and determining a matching network; s4: and finishing the design of the broadband power amplifier chip. The matching network designed by the invention utilizes the capacitive reactance and inductive reactance conversion of the elements before and after the resonant frequency point when the resonant point is exceeded, more accurately fits the matching network with larger impedance change in a broadband range, and greatly reduces the loss of indexes such as power efficiency and the like caused by ensuring the bandwidth of the traditional broadband power amplifier chip. The broadband matching network is designed in sections, the matching network of a plurality of frequency bands is realized at the same time by the resonant element, and the impedance of the matching network at the plurality of frequency bands is closer to the target impedance, so that the overall performance of the broadband power amplifier is improved.
Description
Technical Field
The invention belongs to the technical field of chip design, and particularly relates to a design method of a broadband power amplifier chip.
Background
The rapid development of wireless communication, communication systems with more carriers and more flexible carrier configurations are used more, which increasingly demands miniaturized rf power amplifiers with high power and bandwidth, and becomes a key technology of the system. The broadband amplifier has the problem of poor matching network, so that the main index of a link is easy to decrease after cascade connection, and meanwhile, the output power of partial frequency points is often low, so that the broadband radio frequency power amplifier can consume more radio frequency driving power and direct current power, the performance of the system is reduced, and the cost is increased.
Disclosure of Invention
In order to solve the above problems, the present invention provides a design method for a wideband power amplifier chip.
The technical scheme of the invention is as follows: a design method of a broadband power amplifier chip comprises the following steps:
s1: extracting a component model of the over-resonance point;
s2: performing equivalent replacement on the over-resonance point component model to obtain an equivalent circuit;
s3: performing frequency point matching on the equivalent circuit, and determining a matching network of the broadband power amplifier chip;
s4: and finishing the design of the broadband power amplifier chip according to the over-resonance point component model and the matching network.
Further, in step S1, a broadband model of the resonant point device is extracted.
Further, in step S2, the specific method for performing equivalent replacement is: and equivalently replacing the maximum value, the minimum value and the middle value of the over-resonance point component model at the working frequency point of the over-resonance point component by using an ideal capacitor, an ideal inductor and an ideal resistance network circuit.
Further, in step S3, the specific method for performing frequency point matching on the working frequency point median value is as follows: and combining an equivalent circuit corresponding to the working frequency point intermediate value of the over-resonance point component model with a set peripheral matching circuit.
Further, in step S3, the specific method for performing frequency point matching on the maximum value and the minimum value of the working frequency point is as follows: combining a peripheral matching circuit combined with the middle value of the working frequency point of the over-resonance point component with equivalent circuits corresponding to the lowest value of the working frequency point and the highest value of the working frequency point respectively;
if the matching network impedance obtained by combination reaches the set target impedance, the matching network is utilized to carry out broadband power amplifier simulation, otherwise, the peripheral matching circuit is changed, and the equivalent circuit combination of the lowest value and the highest value of the working frequency point is repeated until the matching network impedance obtained by combination reaches the set target impedance.
Further, in step S4, the broadband model of the over-resonance point device is imported into simulation software, and parameter scanning is performed on the matching network to perform broadband power amplifier simulation, thereby completing broadband power amplifier chip design.
The invention has the beneficial effects that: the matching network designed by the invention utilizes the capacitive reactance and inductive reactance conversion of the elements before and after the resonant frequency point when the resonant point is exceeded, more accurately fits the matching network with larger impedance change in a broadband range, and greatly reduces the loss of indexes such as power efficiency and the like caused by ensuring the bandwidth of the traditional broadband power amplifier chip. The broadband matching network is designed in sections, the matching network of a plurality of frequency bands is realized at the same time by the resonant element, and the impedance of the matching network at the plurality of frequency bands is closer to the target impedance, so that the overall performance of the broadband power amplifier is improved.
Drawings
FIG. 1 is a flow chart of a method of designing a wideband power amplifier chip;
FIG. 2 is a graph illustrating the frequency characteristic of the impedance of a capacitor according to an embodiment of the present invention;
FIG. 3 is a graph illustrating frequency characteristics of impedance of another capacitor according to an embodiment of the present invention;
FIG. 4 is a circuit diagram of a high frequency capacitor, resistor, and over-resonant point capacitor parallel matching network in an embodiment of the present invention;
fig. 5 is a circuit diagram of a high-frequency capacitor and over-resonant point capacitor parallel matching network in an embodiment of the invention.
Detailed Description
The embodiments of the present invention will be further described with reference to the accompanying drawings.
Before describing specific embodiments of the present invention, in order to make the solution of the present invention more clear and complete, the definitions of the abbreviations and key terms appearing in the present invention will be explained first:
a over-resonance point component: components beyond the resonance point.
Broadband model: scattering parameters of the components within a certain frequency range.
Ideal capacitance: the capacitor element has zero dielectric loss, no leakage, zero distributed inductance and consistent frequency characteristics.
Ideal inductance: the ideal inductor has only inductive reactance and no resistance, the real part of the impedance is zero, and the current can not generate heat when flowing.
Ideal resistance: the resistance value of the resistor does not change with a change in voltage or current, nor does it change due to a sudden change in current.
As shown in fig. 1, the present invention provides a design method of a wideband power amplifier chip, which includes the following steps:
s1: extracting a component model of the over-resonance point;
s2: performing equivalent replacement on the over-resonance point component model to obtain an equivalent circuit;
s3: performing frequency point matching on the equivalent circuit, and determining a matching network of the broadband power amplifier chip;
s4: and finishing the design of the broadband power amplifier chip according to the over-resonance point component model and the matching network.
In the embodiment of the present invention, in step S1, a broadband model of the resonant point device is extracted.
In step S1, a broadband model of the component (such as a resistor, a capacitor, an inductor, a balun, etc.) is extracted, where the definition of broadband means that the upper frequency limit of the model concerned is far beyond the resonant frequency of the component itself. For devices with a certain temperature coefficient, model extraction can be carried out at high and low temperatures and normal temperature, so that a circuit with a certain temperature compensation effect can be designed conveniently. In a specific extraction mode, measurement can be performed in a TRL mode, the accuracy is high, and other modes can be used.
In the embodiment of the present invention, in step S2, a specific method for performing equivalent replacement is as follows: and equivalently replacing the maximum value, the minimum value and the middle value of the over-resonance point component model at the working frequency point of the over-resonance point component by using an ideal capacitor, an ideal inductor and an ideal resistance network circuit.
In step S2, the over-resonance point component model is equivalently replaced with an ideal capacitor, inductor, and resistor network circuit at each frequency point of the current working bandwidth. In order to reduce workload, equivalent replacement can be performed by using three frequency points of high, medium and low, wherein the high frequency point refers to an upper limit of a working frequency band, the low frequency point refers to a lower limit of the working frequency band, and the central frequency point is a middle value of the working frequency band, so that equivalent replacement circuits of the three frequency points are obtained respectively. The impedance characteristics of the same component with completely different properties at different frequency points can be observed in the step, and the broadband matching network is convenient to use.
In the embodiment of the present invention, in step S3, a specific method for performing frequency point matching on the maximum value and the minimum value of the working frequency point is as follows: combining a peripheral matching circuit combined with the middle value of the working frequency point of the over-resonance point component with equivalent circuits corresponding to the lowest value of the working frequency point and the highest value of the working frequency point respectively;
if the matching network impedance obtained by combination reaches the set target impedance, the matching network is utilized to carry out broadband power amplifier simulation, otherwise, the peripheral matching circuit is changed, and the equivalent circuit combination of the lowest value and the highest value of the working frequency point is repeated until the matching network impedance obtained by combination reaches the set target impedance.
In the embodiment of the present invention, in step S3, in the first step, single frequency point matching is performed first, and a middle value of a working frequency point is selected for single frequency point matching, and the specific method thereof is as follows: the equivalent replacement circuit of the central frequency point of the over-resonance point component model in the equivalent circuit is used as a part of the matching network, and then the peripheral matching circuit is designed, so that the design of the input or output matching network of a single frequency point is completed. Due to the fact that the matching of the single frequency point is adopted, the matching network can be designed to be miniaturized. And in the second step, high and low frequency points are respectively matched, at the moment, the parameters of the equivalent circuit part are respectively set as the parameters corresponding to the high and medium frequency points obtained in the step S2, and the parameters of the peripheral matching circuit obtained in the first step are kept unchanged. If the impedance of the matching network is closer to the target impedance, the step is finished; if the difference is large, the parameters of peripheral matching are readjusted, the adjusted parameters are returned to the network of the central frequency point for verification, and finally the matching networks of the three frequency points can reach the target impedance value through repeated iteration, the three matching networks share the same peripheral matching part, and the difference is only an equivalent replacement circuit.
And (4) replacing the equivalent circuit value in the network synthesized by the three frequency points of high, middle and low in the step (S3) by selecting a closest over-resonant component model in the step (S2). Therefore, three high, middle and low matching networks are realized by using one matching circuit, and the precise matching of broadband is realized.
In the embodiment of the invention, in step S4, the broadband model of the over-resonance point component is imported into simulation software, and parameter scanning is performed on the matching network to perform broadband power amplifier simulation, thereby completing broadband power amplifier chip design.
In step S4, the component model extracted in step S1 is imported into simulation software, and circuit parameters except the resonant component model in the matching network are optimized in a small range through parameter scanning and optimization functions. Thus, the design work of the broadband matching network is completed.
In the embodiment of the invention, the input matching network of the broadband is the key for realizing excellent input matching of the broadband power amplifier, and directly influences the standing wave, the gain and the gain flatness of the broadband power amplifier. The design method of the matching network of the broadband power amplifier chip realizes more accurate network matching and more miniaturized circuit volume in a broadband. The power amplifier input and output matching network is realized by designing different radio frequency circuits on a printed circuit board, and generally comprises devices such as a capacitor, an inductor, a resistor, a microstrip line and the like.
The working frequency range of the broadband power amplifier is very wide, the optimal impedance required by the input/output port is greatly changed in the whole working frequency range, and a matching network designed by using common high-frequency inductors and high-frequency capacitors is often difficult to achieve ideal matching, so that compromise is made between the working bandwidth and the power amplifier performance, namely, the performance of a part of power, gain, input standing wave and the like of the power amplifier is lost, and the requirement is met in the whole working bandwidth. One important reason is that the impedance characteristics of the ideal capacitance and inductance are monotonic (e.g., XL =2 pi fL, XC = 1/(2 pi fC)), i.e., the ideal capacitance and inductance exhibit pure capacitance and inductance characteristics in the operating frequency band. Fig. 2 and 3 are frequency characteristic curves of impedances of two capacitors, respectively, showing capacitive characteristic impedance curves of ideal capacitors in a frequency range from a starting frequency at a lower end to a marked point at a left side. This is the common frequency range for conventional radio frequency circuit designs. The lowest point of the impedance mode values in fig. 2 and 3 is the resonance point of the capacitor, and the resonance point shows the inductance characteristic towards the right side marking point. The capacitive nature of this band of frequencies becomes poor and is often not used.
The required impedance of the broadband power amplifier usually includes both capacitance and inductance characteristics within the working frequency band, and the impedance value has a large variation. It is often difficult to synthesize such input and output matching networks using conventional devices such as ideal capacitors and inductors; the difference between the realized impedance and the required target impedance is larger, so that the main indexes of the power amplifier are reduced more; the circuit volume is also large.
The invention designs the matching network by utilizing the resonance characteristics of the capacitor, the inductor and the resistor, and integrates the broadband and miniaturized matching network by utilizing the frequency resonance characteristics of electronic components such as resistance-capacitance inductor and the like. Any capacitance-resistance inductance has a self resonant frequency, and when the resonant frequency is exceeded, the impedance characteristic of the capacitance can present the characteristic of the inductance, and the impedance characteristic of the inductance can present the characteristic of the capacitance. In other words, in a certain frequency range, the same device such as a capacitance-resistance inductor can respectively realize the characteristics of capacitance and inductance at different frequencies, and the frequency distribution characteristic of the impedance provides a new dimension to synthesize a broadband and miniaturized matching network.
The following describes the technical solution of the present invention with reference to two matching networks.
An input matching network (in practical application, the input matching network can also be used for outputting) is formed by a high-frequency capacitor, a resistor and a capacitor passing a resonance point, as shown in fig. 4, wherein 1, 2 and 6 are microstrip lines with different impedances, 3 is the high-frequency capacitor, and the resonance frequency is very high and is higher than the highest working frequency of the power amplifier; 4 is a resistor; and 5, the capacitor passes through a resonance point, the resonance frequency is lower than the highest working frequency of the power amplifier, and the capacitive-inductive conversion is realized in the working frequency band. After the circuit is used, the gain flatness is improved by 1.5 dB; the power amplifier S11 reaches-7 dB, while the current similar products S11 is about-3 dB, and the improvement is obvious.
As shown in fig. 5, it is a circuit diagram of a high-frequency capacitor and low-frequency capacitor parallel matching network, where 7 and 8 are microstrip lines with different impedances, 9 is a high-frequency capacitor, and the resonant frequency is very high and higher than the highest operating frequency of the power amplifier; 10 is an over-resonance point capacitor, the resonance frequency is lower than the highest working frequency of the power amplifier, and the capacitive-inductive conversion is presented in the working frequency band. After the circuit is used, the output power of the lowest frequency point of the power amplifier is improved by 0.5dB, other frequency points basically have no loss, and the output power characteristic of the broadband power amplifier is well improved.
It will be appreciated by those of ordinary skill in the art that the embodiments described herein are intended to assist the reader in understanding the principles of the invention and are to be construed as being without limitation to such specifically recited embodiments and examples. Those skilled in the art, having the benefit of this disclosure, may effect numerous modifications thereto and changes may be made without departing from the scope of the invention in its aspects.
Claims (4)
1. A design method of a broadband power amplifier chip is characterized by comprising the following steps:
s1: extracting a component model of the over-resonance point;
s2: performing equivalent replacement on the over-resonance point component model to obtain an equivalent circuit;
s3: performing frequency point matching on the equivalent circuit, and determining a matching network of the broadband power amplifier chip;
s4: completing the design of a broadband power amplifier chip according to the over-resonance point component model and the matching network;
in the step S1, a broadband model of the resonant point device is extracted; the broadband model is a scattering parameter of a component in a certain frequency range;
in step S2, the specific method for performing equivalent replacement is: equivalently replacing the maximum value, the minimum value and the middle value of the over-resonance point component model at the working frequency point of the over-resonance point component with an ideal capacitor, an ideal inductor and an ideal resistance network circuit;
in step S3, in the first step, single frequency point matching is performed, and a middle value of a working frequency point is selected for single frequency point matching, and the specific method is as follows: an equivalent replacement circuit of a central frequency point of a component model passing through a resonance point in an equivalent circuit is used as a part of a matching network, a peripheral matching circuit is designed, and the design of the input or output matching network of a single frequency point is completed; secondly, respectively matching high and low frequency points, respectively setting parameters of the equivalent circuit part as corresponding parameters of the high and medium frequency points obtained in the step S2, keeping the parameters of the peripheral matching circuit obtained in the first step unchanged, and finishing the step if the difference value between the impedance of the matching network and the target impedance is smaller than a set impedance threshold value; if the difference value between the impedance of the matching network and the target impedance is larger than the set impedance threshold value, readjusting parameters of peripheral matching, returning the adjusted parameters to the network of the central frequency point for verification, and repeatedly iterating until the matching networks of the three frequency points all reach the target impedance value, wherein the three matching networks share the same peripheral matching part, and the difference is an equivalent replacement circuit;
and (4) replacing equivalent circuit values in the network synthesized by the three frequency points of high, medium and low in the step (S3) by selecting a closest over-resonant component model in the step (S2), so that the three matching networks of high, medium and low can be realized by one matching circuit.
2. The method for designing a wideband power amplifier chip according to claim 1, wherein in step S3, the specific method for performing frequency point matching on the working frequency point intermediate value is as follows: and combining an equivalent circuit corresponding to the working frequency point intermediate value of the over-resonance point component model with a set peripheral matching circuit.
3. The method for designing a wideband power amplifier chip according to claim 1, wherein in step S3, the specific method for performing frequency point matching on the maximum value and the minimum value of the working frequency point is as follows: combining a peripheral matching circuit combined with the middle value of the working frequency point of the over-resonance point component with equivalent circuits corresponding to the lowest value of the working frequency point and the highest value of the working frequency point respectively;
if the matching network impedance obtained by combination reaches the set target impedance, the matching network is utilized to carry out broadband power amplifier simulation, otherwise, the peripheral matching circuit is changed, and the equivalent circuit combination of the lowest value and the highest value of the working frequency point is repeated until the matching network impedance obtained by combination reaches the set target impedance.
4. The method of claim 1, wherein in step S4, the wideband model of the over-resonance point device is introduced into simulation software, and parameter scanning is performed on the matching network to perform wideband power amplifier simulation, thereby completing wideband power amplifier chip design.
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