CN114784624A - High-speed surface emitting laser and preparation method thereof - Google Patents

High-speed surface emitting laser and preparation method thereof Download PDF

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Publication number
CN114784624A
CN114784624A CN202210381462.7A CN202210381462A CN114784624A CN 114784624 A CN114784624 A CN 114784624A CN 202210381462 A CN202210381462 A CN 202210381462A CN 114784624 A CN114784624 A CN 114784624A
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layer
photonic crystal
type
mediocre
topological
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田思聪
潘绍驰
韩赛一
徐汉阳
王子烨
陆寰宇
汪丽杰
佟存柱
王立军
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Changchun Institute of Optics Fine Mechanics and Physics of CAS
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Changchun Institute of Optics Fine Mechanics and Physics of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The invention provides a high-speed surface-emitting laser and a preparation method thereof, wherein the high-speed surface-emitting laser comprises an N-type substrate, an N-type contact layer, an N-type limiting layer, a lower oxidizable layer, an active layer, an upper oxidizable layer, a P-type limiting layer and a P-type contact layer which are prepared from bottom to top in sequence, and a topological non-trivial state photonic crystal and a topological trivial state photonic crystal are formed in the P-type contact layer and a part of the P-type limiting layer or etched in the P-type limiting layer, the topological non-trivial state photonic crystal is surrounded by the topological trivial state photonic crystal, and the topological non-trivial state photonic crystal forms two resonant cavities and a coupling channel for coupling the two resonant cavities. According to the invention, through the photon-photon resonance effect of the two resonant cavities, the limit of relaxation oscillation frequency caused by carrier-photon resonance generated by the resonant cavities of the surface emitting laser can be broken through, so that the bandwidth is expanded, and the modulation bandwidth of the surface emitting laser is improved.

Description

High-speed surface emitting laser and preparation method thereof
Technical Field
The invention relates to the technical field of semiconductor lasers, in particular to a high-speed surface emitting laser and a preparation method thereof.
Background
High-speed surface-emitting lasers (SEL) are important light sources in the field of optical interconnects. Optical interconnect technologies based on high-speed Vertical Cavity Surface Emitting Lasers (VCSELs) and multimode fibers (MMFs) have the advantages of low cost and low power consumption, and are moving to higher speeds and longer distances. Increasing the VCSEL modulation bandwidth can increase the VCSEL-MMF data transmission rate. The single-mode VCSEL can reduce the mode dispersion and improve the VCSEL-MMF transmission distance, so that the VCSEL-based optical interconnection technology can be used for data transmission in short-distance data centers and can also be used for data transmission among longer-distance data centers.
Increasing the modulation bandwidth of a VCSEL can be achieved by increasing the optical confinement factor and reducing the active area volume. The active region of a VCSEL is related to the cavity length and aperture of the VCSEL. The cavity length of current data communication VCSELs is typically half the wavelength and cannot be further reduced. Although the aperture of the VCSEL can be reduced to improve the modulation bandwidth while realizing a single mode, the reduction of the aperture of the VCSEL causes problems of an increase in resistance, and a decrease in output power.
The photonic crystal surface emitting semiconductor laser (PCSEL) realizes laser oscillation by a photonic crystal band edge mode and realizes laser single-mode emission output by bragg diffraction. Compared with VCSELs, PCSEL has lower absorption loss and series resistance and higher optical confinement factor, and is beneficial to improving the modulation bandwidth of the laser. However, the realization of PCSEL laser oscillation requires a larger resonator size, so that the active region has a larger volume, which adversely affects the increase of the modulation bandwidth of PCSEL.
The Mareni professor of Beijing university extends the topological edge states to the topological bulk states, constructs a laser cavity by two photonic crystals with topologically mediocre and topologically non-mediocre states, and realizes laser oscillation at its interface by a novel band-inversion optical field confinement effect. The PCSEL based on the topological state not only has the advantages of high limiting factor and low resistance of the traditional PCSEL, but also can realize single-mode output of laser based on the topological energy band inversion light field limiting effect. However, PCSEL development based on topology encounters a bottleneck, and the bandwidth cannot be further increased.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a high-speed surface emitting laser and a preparation method thereof, which can increase the relaxation oscillation frequency of the surface emitting laser, ensure single-mode characteristics and further improve the modulation bandwidth of the surface emitting laser.
In order to realize the purpose, the invention adopts the following specific technical scheme:
the invention provides a high-speed surface emitting laser, which comprises an N-type substrate, an N-type contact layer, an N-type limiting layer, an active layer, a P-type limiting layer and a P-type contact layer which are sequentially prepared from bottom to top, wherein a topological indifferent state photonic crystal and a topological indifferent state photonic crystal are formed in the P-type contact layer and a part of the P-type limiting layer or in the P-type limiting layer in an etching mode, the topological indifferent state photonic crystal is surrounded by the topological indifferent state photonic crystal, and the topological indifferent state photonic crystal forms two resonant cavities and a coupling channel for coupling the two resonant cavities.
Preferably, an oxidizable layer is provided between the active layer and the N-type confinement layer and/or between the active layer and the P-type confinement layer, the oxidizable layer comprising oxidized portions at the edges and unoxidized portions at the center, the oxidized portions forming, after oxidation, an insulating material, making the unoxidized portions form apertures for the passage of current.
Preferably, the topologically non-mediocre photonic crystal and the topologically mediocre photonic crystal respectively include unit cells periodically arranged in a honeycomb lattice with the same lattice constant, and the unit cells are internally formed with rotationally symmetrically distributed nano-pores; for topologically non-mediocre photonic crystals, the distance between the center of the nanopore and the center of the unit cell is greater than one third of the photonic crystal lattice constant; for topologically mediocre photonic crystals, the distance between the center of the nanopore and the center of the unit cell is less than one third of the photonic crystal lattice constant.
Preferably, the nanopore is circular, triangular or square, when the nanopore is circular or triangular, the number of nanopores in each unit cell is six, and the corresponding unit cell is a regular hexagon; when the nano-holes are square, the number of nano-holes in each unit cell is four, and the corresponding unit cell is square.
Preferably, the nanopores are filled with a dielectric material having a refractive index less than that of the surrounding medium.
Preferably, the N-type contact layer and the P-type contact layer are doped layers, and the doping concentration of the doped layers exceeds 5 x 1018cm-3。
The invention provides a preparation method of a high-speed surface emitting laser, which is used for preparing the high-speed surface emitting laser and comprises the following steps:
s1, growing an N-type contact layer, an N-type limiting layer, an active layer, a P-type limiting layer and a P-type contact layer on the N-type substrate in sequence;
s2, etching from the P type contact layer to the P type limiting layer to form a topological non-mediocre photonic crystal and a topological mediocre photonic crystal; wherein the topological non-mediocre photonic crystal is surrounded by the topological mediocre photonic crystal to form two resonant cavities and a coupling channel for coupling the two resonant cavities;
s3, etching from the P type contact layer to the N type contact layer to form a mesa at the position avoiding the topological non-mediocre state photonic crystal and the topological mediocre state photonic crystal;
s4, depositing a layer of electrode material on the P-type contact layer on the table top to form a P-surface electrode, and depositing a layer of electrode material on the N-type contact layer outside the table top to form an N-surface electrode;
s5, depositing a planarization material layer with the same height as the P-surface electrode at the position outside the table top and avoiding the N-surface electrode;
and S6, extracting the P-surface electrode and the N-surface electrode to the same height by using the planarization material layer to form a coplanar electrode.
Preferably, in step S1, an oxidizable layer is prepared between the active layer and the N-type confinement layer and/or between the active layer and the P-type confinement layer, the oxidizable layer forming an insulating material by oxidizing edge portions, and portions not oxidized in the center forming apertures for flowing current.
The invention provides another preparation method of a high-speed surface emitting laser, which is used for preparing the high-speed surface emitting laser and comprises the following steps:
s1, growing an N-type contact layer, an N-type limiting layer, an active layer and a P-type limiting layer on the N-type substrate in sequence;
s2, etching down to a position close to the active layer in the P type limiting layer to form topological non-mediterranean state photonic crystals and topological mediterranean state photonic crystals; wherein the topological non-mediocre photonic crystal is surrounded by the topological mediocre photonic crystal to form two resonant cavities and a coupling channel for coupling the two resonant cavities;
s3, growing a P type contact layer on the P type limiting layer;
s4, etching from the P-type contact layer to the N-type limiting layer to form a mesa at the position avoiding the topological non-mediocre photonic crystal and the topological mediocre photonic crystal;
s5, depositing a layer of electrode material on the P-type contact layer on the table top to form a P-face electrode, and depositing a layer of electrode material on the N-type limiting layer outside the table top to form an N-face electrode;
s6, depositing a planarization material layer with the same height as the P-surface electrode at the position outside the table surface and avoiding the N-surface electrode;
and S7, extracting the P-surface electrode and the N-surface electrode to the same height by using the planarization material layer to form a coplanar electrode.
Preferably, in step S1, an oxidizable layer is prepared between the active layer and the N-type confinement layer and/or between the active layer and the P-type confinement layer, the oxidizable layer forms an insulating material by oxidizing edge portions, and portions not oxidized in the center form apertures for flowing current.
The invention can obtain the following technical effects:
1. through the photon-photon resonance effect of the two resonant cavities, the limit of relaxation oscillation frequency caused by carrier-photon resonance generated by the resonant cavities of the surface emitting laser can be broken through, so that the bandwidth is expanded, and the modulation bandwidth of the surface emitting laser is improved.
2. The insulating material formed after the oxidizable layer is oxidized can limit the current, so that the current is ensured to flow through the active layer more intensively, and the active layer is easier to lase.
Drawings
Fig. 1 is a schematic structural view of a high-speed surface-emitting laser provided according to embodiment 1 of the present invention;
FIG. 2 is a schematic structural view of a photonic crystal structure provided in accordance with embodiment 1 of the present invention;
FIG. 3 is a schematic structural diagram of two resonant cavities and coupling channels provided in embodiment 1 of the present invention;
FIG. 4 is a diagram showing simulation results of disposing a light source in a resonant cavity according to embodiment 1 of the present invention;
FIG. 5 is a diagram showing simulation results of disposing light sources in both resonators according to embodiment 1 of the present invention;
fig. 6 to 13 are schematic views of a dynamic fabrication process of a high-speed surface-emitting laser provided according to embodiment 2 of the present invention;
fig. 14 to 16 are schematic views of a dynamic manufacturing process of a high-speed surface-emitting laser provided according to embodiment 3 of the present invention.
Wherein the reference numerals include: an N-type substrate 11, an N-type contact layer 12, an N-type confinement layer 13, a lower oxidizable layer 14, an active layer 15, an upper oxidizable layer 16, a P-type confinement layer 17, a P-type contact layer 18, a topological extraordinary photonic crystal 21, a topological extraordinary photonic crystal 22, a first cell 23, a second cell 24, a main cavity 25, a coupling cavity 26, a coupling channel 27, an energy band boundary 31, a mesa boundary 32, a mesa 41, an oxidized portion 51, an unoxidized portion 52, a P-side electrode 61, an N-side electrode 62, a planarizing material layer 71, a coplanar electrode 81.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following description, the same reference numerals are used for the same blocks. In the case of the same reference numerals, their names and functions are also the same. Therefore, detailed description thereof will not be repeated.
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not to be construed as limiting the invention.
Example 1
Fig. 1 shows a structure of a high-speed surface-emitting laser provided according to embodiment 1 of the present invention.
As shown in fig. 1, a high-speed surface-emitting laser provided in embodiment 1 of the present invention includes an N-type substrate 11, an N-type contact layer 12, an N-type confinement layer 13, a lower oxidizable layer 14, an active layer 15, an upper oxidizable layer 16, a P-type confinement layer 17, and a P-type contact layer 18, which are prepared in this order from bottom to top, and a photonic crystal structure including a topologically non-flat photonic crystal 21 and a topologically flat photonic crystal 22 is constructed by etching a nanopore in the P-type contact layer 18 and a portion of the P-type confinement layer 17 or in the P-type confinement layer 17.
There are two ways to construct the topologically non-mediocre photonic crystal 21 and the topologically mediocre photonic crystal 22, one way being to etch down from the P-contact layer 18 to the P-confinement layer 17 to form a photonic crystal structure; the other method is to etch the P-type limiting layer 17 to form a photonic crystal structure after a primary epitaxial process is used for growing the P-type limiting layer, and then apply a regrowth process to form the P-type contact layer 18 to form a buried photonic crystal structure.
Fig. 2 shows a schematic structural diagram of a photonic crystal structure provided in embodiment 1 of the present invention.
As shown in fig. 2, the topological non-mesopic photonic crystal 21 includes a plurality of first cells 23 periodically arranged in a honeycomb lattice with the same lattice constant, the topological mesopic photonic crystal 22 includes a plurality of second cells 24 periodically arranged in a honeycomb lattice with the same lattice constant, the outer edges of the first cells 23 and the second cells 24 are regular polygons, the first cells 23 and the second cells 24 have rotational symmetric nanopores inside, the nanopores are circular, regular triangular or square, and no nanopores are prepared in the centers of the first cells 23 and the second cells 24.
Because the distances from the nano holes to the centers of the unit cells are different, two different energy band structures of a dipole mode and a quadrupole mode are formed; when the distance between the center of the nanopore and the center of the first unit cell 23 is less than one third of the lattice constant of the photonic crystal, no energy band inversion occurs between the dipole and the quadrupole modes, and the topologically mediocre photonic crystal is formed; a body 61; the etched topological non-mediocre photonic crystal 21 is surrounded by the topological mediocre photonic crystal 22, the interface of the two forms an energy band boundary 31, and the energy band boundary 31 forms a closed curve; due to the different energy band structures at the two ends of the energy band boundary 31, photons with frequencies near the center of the Brillouin zone are reflected at the boundary, so that a resonant cavity is formed in the closed energy band boundary 31, and the optical field is limited transversely by the method. The light wave is effectively limited by the photonic crystal structure in the transverse direction, is coupled to the vertical direction through Bragg diffraction and resonates, single-mode lasing is achieved, and the high-speed surface emitting laser has a vertical emitting characteristic.
When the outer edges of the unit cells (the first unit cell 23 and the second unit cell 24) are both regular hexagons, the shape of the nanopores in the unit cells is circular or triangular, the number of the nanopores is six, and the six circular nanopores or the triangular nanopores are rotationally and symmetrically distributed along the center of the unit cell to form the unit cell.
When the outer edges of the unit cells are all in a regular quadrangle, the shape of the nano holes in the unit cells is square, the number of the nano holes is four, and the four square nano holes are rotationally and symmetrically distributed along the centers of the unit cells to form the unit cells.
Whatever the shape of the nanopore, the nanopore can be filled with a dielectric material having a refractive index less than that of the surrounding medium to change the refractive index difference with the surrounding medium.
The lower oxidizable layer 14 and the upper oxidizable layer 16 include oxidized portions 51 at the edges and unoxidized portions 52 at the center, the oxidized portions 51 containing a high aluminum component and forming an insulating material after oxidation, and the oxidized portions 51 surrounding the unoxidized portions at the center to form an aperture through which current can flow.
When current is injected into the high-speed surface emitting laser, the current flows through the active layer 15 more intensively due to the limitation of the lower oxidizable layer 14 and the upper oxidizable layer 16, and the current density of the active layer 15 is higher, so that the active layer 15 is easier to lase.
Fig. 1 shows a case where oxidizable layers are formed on both upper and lower sides of the active layer 15, respectively, but the present invention is not limited to the above case, and the oxidizable layers may be formed only on the upper or lower side of the active layer 15 to limit the current, and the number of oxidizable layers may be one or more layers.
The N-type contact layer 12 and the P-type contact layer 18 can be doped layers contacting with the P-side electrode and the N-side electrode, and the doping concentration of the doped layers exceeds 5 x 1018cm-3To achieve good ohmic contact.
Fig. 3 shows the structure of two resonant cavities and coupling channels provided according to embodiment 1 of the present invention.
As shown in fig. 3, two identical resonant cavities are laterally constructed, one as a main cavity 25 and the other as a coupling cavity 26, and a coupling channel 27 is formed between the main cavity 25 and the coupling cavity 26 through the topologically non-ordinary state photonic crystal 21, so that a limited quadrupole mode can be coupled between the main cavity 25 and the coupling cavity 26 through the coupling channel 27. Through the photon-photon resonance effect between the main cavity 25 and the coupling cavity 26, the relaxation oscillation frequency limitation caused by carrier-photon resonance generated by the resonant cavity of the surface emitting laser can be broken through, so that the bandwidth is expanded, and the modulation bandwidth of the surface emitting laser is improved.
In order to keep the current of the main cavity 25 independent from that of the coupling cavity 26 and allow light to pass through freely, it is necessary to ensure that the main cavity 25 and the coupling cavity 26 cannot be conducted, and a high resistance region is generally realized at the coupling channel 27 by proton injection, so as to achieve the purpose of electrical insulation.
Fig. 4 is a simulation result of disposing a light source in a coupling cavity according to embodiment 1 of the present invention.
As shown in fig. 4, it can be found through simulation that, a light source is disposed in a main cavity, the main cavity and the coupling cavity simultaneously implement a single mode, and a coupling channel between the main cavity and the coupling cavity does not affect the mode distribution of the main cavity, and can still ensure better single mode characteristics.
Fig. 5 shows simulation results of arranging light sources in both coupling cavities according to embodiment 1 of the present invention.
As shown in fig. 5, the light sources are disposed in both the main cavity and the coupling cavity, the single mode of the main cavity remains intact, and the electric field distribution is significantly enhanced compared to a single cavity disposed light source.
Example 2
Embodiment 2 of the present invention provides a method for manufacturing a high-speed surface-emitting laser, which is used for the high-speed surface-emitting laser of embodiment 1.
Fig. 6 to 13 respectively show the dynamic preparation process of the high-speed surface-emitting laser provided according to embodiment 2 of the present invention.
As shown in fig. 6 to fig. 13, the method for manufacturing a high-speed surface emitting laser according to embodiment 2 of the present invention includes the steps of:
s1, growing an N-type contact layer 12, an N-type limiting layer 13, a lower oxidizable layer 14, an active layer 15, an upper oxidizable layer 16, a P-type limiting layer 17 and a P-type contact layer 18 on the N-type substrate 11 in sequence.
S2, etching from the P-type contact layer 18 down to the P-type confinement layer 17 forms the topologically unsmooth-state photonic crystal 21 and the topologically unsmooth-state photonic crystal 22.
The topologically non-mediocre photonic crystal 21 is surrounded by the topologically mediocre photonic crystal 22 to form two resonant cavities and a coupling channel coupling the two resonant cavities.
The topological non-degenerate state photonic crystal 21 and the topological degenerate state photonic crystal 22 have been described in detail in embodiment 1, and thus are not described in detail here.
The confined quadrupole mode is capable of forming a coupling between the two resonators through the coupling channel. Through the photon-photon resonance effect between the two resonant cavities, the relaxation oscillation frequency limitation caused by carrier-photon resonance generated by the resonant cavities of the surface emitting laser can be broken through, so that the bandwidth is expanded, and the modulation bandwidth of the surface emitting laser is improved.
In order to keep the currents of the two resonant cavities independent and allow light to pass freely, it is necessary to ensure that the two resonant cavities cannot be conducted. Therefore, before the topological non-mediocre photonic crystal 21 and the topological mediocre photonic crystal 22 are formed by etching, a high-resistance region is realized at the coupling channel by adopting a proton injection mode, and the electric insulation between the two resonant cavities is realized.
S3, etching down from the P-type contact layer 18 to the N-type confinement layer 13 at the mesa boundary 32, avoiding the locations of the topologically non-mediocre photonic crystal 21 and the topologically mediocre photonic crystal 22, forms a mesa 41 that exposes the lower and upper oxidizable layers 14, 16.
The exposed lower oxidizable layer 14 and upper oxidizable layer 16 form an insulating material by oxidizing the edge portions, while the portions that are not oxidized in the center form apertures for the flow of current. When current is injected into the high-speed surface emitting laser, the current flows through the active layer 15 more intensively due to the limitation of the lower oxidizable layer 14 and the upper oxidizable layer 16, and the current density of the active layer 15 is higher, so that the active layer 15 is easier to lase.
Of course, the present invention may also be applied to prepare the oxidizable layer only on the upper or lower side of the active layer 15 to limit the current, and the number of oxidizable layers may be one or more layers.
S4, depositing a layer of electrode material on the P-type contact layer 18 on the mesa 41 to form the P-side electrode 61, and depositing a layer of electrode material on the N-type confinement layer 13 outside the mesa 41 to form the N-side electrode 62.
And S5, depositing and forming a planarization material layer 71 with the same height as the P-surface electrode 61 at the position outside the mesa 41 and avoiding the N-surface electrode 62.
The planarizing material layer 71 is required to avoid covering the N-face electrode 62, and to planarize the surface of the high-speed surface-emitting laser.
S6, the P-side electrode 61 and the N-side electrode 62 are drawn out to the same height by the planarization material layer 71, and the coplanar electrode 81 is formed.
The P-side electrode 61 and the N-side electrode 62 are led out to the same height to realize current injection.
If the P-type contact layer 18 is etched to a position close to the active layer 15, the etching depth is too deep, which affects the current distribution, causes the current to be uneven, and increases the resistance, and the maximum emergent light power is usually measured between the etching depth and the diffraction efficiency.
Example 3
Embodiment 3 of the present invention provides another method for manufacturing a high-speed surface-emitting laser, which is used for the high-speed surface-emitting laser of embodiment 1.
Fig. 14 to 16 respectively show the dynamic manufacturing processes of the high-speed surface-emitting laser provided according to embodiment 3 of the present invention.
As shown in fig. 14 to 16, a method for manufacturing a high-speed surface-emitting laser according to embodiment 3 of the present invention includes the steps of:
s1, growing an N-type contact layer 12, an N-type confinement layer 13, a lower oxidizable layer 14, an active layer 15, an upper oxidizable layer 16, and a P-type confinement layer 17 in this order on the N-type substrate 11.
S2, a topologically non-mediocre photonic crystal 21 and a topologically mediocre photonic crystal 22 are formed within the P-type confinement layer 17 etched down to a position close to the active layer 15.
S3, a P-type contact layer 18 is grown on the P-type confinement layer 17 using a regrowth process.
The remaining steps are the same as S3-S6 of example 2.
In the present embodiment 3, the oxidizable layer may be formed only on the upper side or the lower side of the active layer 15 to limit the current, and the number of the oxidizable layers may be one or more layers.
This embodiment 3 is an etching from the P-type confinement layer 17 down to a shallow depth, but closer to the active layer 15 than embodiment 2. Therefore, embodiment 3 can make the light intensity at the photonic crystal structure stronger, and can obtain higher vertical outgoing light power.
In the description of the specification, reference to the description of "one embodiment," "some embodiments," "an example," "a specific example," or "some examples" or the like means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Moreover, various embodiments or examples and features of various embodiments or examples described in this specification can be combined and combined by one skilled in the art without being mutually inconsistent.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
The above embodiments of the present invention should not be construed as limiting the scope of the present invention. Any other corresponding changes and modifications made according to the technical idea of the present invention should be included in the protection scope of the claims of the present invention.

Claims (10)

1. A high-speed surface-emitting laser comprising an N-type substrate, an N-type contact layer, an N-type confinement layer, an active layer, a P-type confinement layer and a P-type contact layer prepared in this order from bottom to top, wherein a topologically non-mediocre photonic crystal and a topologically mediocre photonic crystal are etched in the P-type contact layer and a portion of the P-type confinement layer or in the P-type confinement layer, and the topologically non-mediocre photonic crystal is surrounded by the topologically mediocre photonic crystal; wherein the topological non-trivial state photonic crystal forms two resonant cavities and a coupling channel coupling the two resonant cavities.
2. The high-speed surface-emitting laser according to claim 1, wherein an oxidizable layer is formed between the active layer and the N-type confinement layer and/or between the active layer and the P-type confinement layer, and the oxidizable layer includes an oxidized portion at an edge and an unoxidized portion at a center, and the oxidized portion forms an insulating material after oxidation, so that the unoxidized portion forms an aperture through which current flows.
3. The high-speed surface-emitting laser according to claim 1, wherein the topologically non-mediocre-state photonic crystal and the topologically mediocre-state photonic crystal respectively include unit cells periodically arranged in a honeycomb lattice with the same lattice constant, the unit cells being formed inside with rotationally symmetrically distributed nano-holes;
for the topologically non-mediocre photonic crystal, the distance between the center of the nanopore and the center of the unit cell is greater than one third of the photonic crystal lattice constant;
for the topologically mediocre photonic crystal, the distance between the center of the nanopore and the center of the unit cell is less than one third of the photonic crystal lattice constant.
4. The high-speed surface-emitting laser according to claim 3, wherein the nano-holes are circular, triangular or square, when the nano-holes are circular or triangular, the number of nano-holes in each unit cell is six, and the corresponding unit cell is a regular hexagon; when the nano-holes are square, the number of nano-holes in each unit cell is four, and the corresponding unit cell is square.
5. The high-speed surface-emitting laser according to claim 3, wherein the nano-holes are filled with a dielectric material having a refractive index smaller than that of a surrounding medium.
6. The high-speed surface-emitting laser according to claim 3, wherein said N-type contact layer and said P-type contact layer are doped layers, and a doping concentration of said doped layers exceeds 5 x 1018cm-3。
7. A method for manufacturing a high-speed surface-emitting laser according to any one of claims 1 to 6, comprising the steps of:
s1, growing an N-type contact layer, an N-type limiting layer, an active layer, a P-type limiting layer and a P-type contact layer on the N-type substrate in sequence;
s2, etching from the P type contact layer to the P type limiting layer to form a topological non-mediterranean state photonic crystal and a topological mediterranean state photonic crystal; wherein the topological non-mediocre photonic crystal is surrounded by the topological mediocre photonic crystal to form two resonant cavities and a coupling channel for coupling the two resonant cavities;
s3, forming a mesa by etching from the P-type contact layer to the N-type contact layer at a position avoiding the topologically non-mediocre-state photonic crystal and the topologically mediocre-state photonic crystal;
s4, depositing a layer of electrode material on the P-type contact layer on the table top to form a P-surface electrode, and depositing a layer of electrode material on the N-type contact layer outside the table top to form an N-surface electrode;
s5, depositing and forming a planarization material layer with the same height as the P-surface electrode at the position outside the mesa and avoiding the N-surface electrode;
and S6, leading out the P-surface electrode and the N-surface electrode to the same height by using the planarization material layer to form a coplanar electrode.
8. The method of claim 7, wherein in step S1, an oxidizable layer is formed between the active layer and the N-type confinement layer and/or between the active layer and the P-type confinement layer, the oxidizable layer forms an insulating material by oxidizing an edge portion, and a portion not oxidized in the center forms an aperture for flowing current.
9. A method for manufacturing a high-speed surface-emitting laser according to any one of claims 1 to 6, comprising the steps of:
s1, growing an N-type contact layer, an N-type limiting layer, an active layer and a P-type limiting layer on the N-type substrate in sequence;
s2, etching down to a position close to the active layer in the P type limiting layer to form topological non-mediterranean state photonic crystals and topological mediterranean state photonic crystals; wherein the topological non-mediocre photonic crystal is surrounded by the topological mediocre photonic crystal to form two resonant cavities and a coupling channel for coupling the two resonant cavities;
s3, growing a P type contact layer on the P type limiting layer;
s4, forming a mesa by etching from the P-type contact layer to the N-type limiting layer at the position avoiding the topological non-mediocre photonic crystal and the topological mediocre photonic crystal;
s5, depositing a layer of electrode material on the P-type contact layer on the mesa to form a P-face electrode, and depositing a layer of electrode material on the N-type limiting layer outside the mesa to form an N-face electrode;
s6, depositing and forming a planarization material layer with the same height as the P-surface electrode at the position outside the mesa and avoiding the N-surface electrode;
and S7, leading out the P-surface electrode and the N-surface electrode to the same height by using the planarization material layer to form a coplanar electrode.
10. The method of claim 9, wherein in step S1, an oxidizable layer is formed between the active layer and the N-type confinement layer and/or between the active layer and the P-type confinement layer, the oxidizable layer forms an insulating material by oxidizing an edge portion, and a portion not oxidized at a center forms an aperture through which current flows.
CN202210381462.7A 2022-04-12 2022-04-12 High-speed surface emitting laser and preparation method thereof Pending CN114784624A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115764549A (en) * 2023-01-09 2023-03-07 吉光半导体科技有限公司 Surface emitting laser and preparation method thereof
CN117317801A (en) * 2023-09-28 2023-12-29 深圳技术大学 Electric pumping topological photonic crystal laser structure and preparation method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115764549A (en) * 2023-01-09 2023-03-07 吉光半导体科技有限公司 Surface emitting laser and preparation method thereof
CN117317801A (en) * 2023-09-28 2023-12-29 深圳技术大学 Electric pumping topological photonic crystal laser structure and preparation method thereof

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