CN114774864A - Preparation device, preparation method and application of high-purity copper alloy target - Google Patents
Preparation device, preparation method and application of high-purity copper alloy target Download PDFInfo
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- CN114774864A CN114774864A CN202210291670.8A CN202210291670A CN114774864A CN 114774864 A CN114774864 A CN 114774864A CN 202210291670 A CN202210291670 A CN 202210291670A CN 114774864 A CN114774864 A CN 114774864A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 79
- 239000000956 alloy Substances 0.000 claims abstract description 79
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 55
- 229910052802 copper Inorganic materials 0.000 claims abstract description 55
- 239000010949 copper Substances 0.000 claims abstract description 55
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 239000007788 liquid Substances 0.000 claims abstract description 17
- 239000013077 target material Substances 0.000 claims abstract description 16
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- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
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- 238000000034 method Methods 0.000 claims description 22
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- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 7
- 239000011572 manganese Substances 0.000 claims description 7
- 229910052748 manganese Inorganic materials 0.000 claims description 7
- 150000002739 metals Chemical class 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 238000011049 filling Methods 0.000 claims description 4
- 239000002826 coolant Substances 0.000 claims description 3
- 239000000155 melt Substances 0.000 abstract description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 3
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- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 3
- HPDFFVBPXCTEDN-UHFFFAOYSA-N copper manganese Chemical compound [Mn].[Cu] HPDFFVBPXCTEDN-UHFFFAOYSA-N 0.000 description 3
- 238000011161 development Methods 0.000 description 3
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000003723 Smelting Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
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- 238000005204 segregation Methods 0.000 description 2
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- 229910017566 Cu-Mn Inorganic materials 0.000 description 1
- 229910017767 Cu—Al Inorganic materials 0.000 description 1
- 229910017871 Cu—Mn Inorganic materials 0.000 description 1
- 229910018594 Si-Cu Inorganic materials 0.000 description 1
- 229910008465 Si—Cu Inorganic materials 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- 238000005477 sputtering target Methods 0.000 description 1
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- 230000002195 synergetic effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22C—FOUNDRY MOULDING
- B22C9/00—Moulds or cores; Moulding processes
- B22C9/06—Permanent moulds for shaped castings
- B22C9/065—Cooling or heating equipment for moulds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22C—FOUNDRY MOULDING
- B22C9/00—Moulds or cores; Moulding processes
- B22C9/22—Moulds for peculiarly-shaped castings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D27/00—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
- B22D27/003—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting by using inert gases
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/01—Alloys based on copper with aluminium as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/05—Alloys based on copper with manganese as the next major constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53233—Copper alloys
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
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Abstract
The invention provides a preparation device and a preparation method of a high-purity copper alloy target, which comprises the following steps: the copper base body is internally provided with a hole, and dissimilar metal is filled in the hole to form an alloy piece; two alloy pieces are oppositely placed in a closed vacuum chamber at intervals, and inert gas is filled in the vacuum chamber; the two alloy pieces are respectively used as a first electrode and a second electrode and are connected to a high-voltage power supply outside the vacuum chamber; the two alloy pieces are driven by the driving device to move oppositely until an electric arc is generated, and the electric arc is gradually ablated and melts the first electrode and the second electrode along with the approach of the alloy pieces; the melted liquid drops enter the preheated copper casting mould under the drive of the directionally flowing inert gas to be solidified to form the high-purity alloy target. The preparation method of the copper alloy target material has the advantages that the obtained product has high component uniformity, is not easily polluted by a crucible and oxygen, and the production equipment is simple and easy to operate.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a preparation device, a preparation method and application of a high-purity copper alloy target.
Background
The properties of single-component metals are often greatly influenced by the trace impurities, the intrinsic properties of the metals can be found by improving the purity of the metals, and brand new metals with properties completely different from those of common metal materials can be created. At present, the application of high-purity metal in the current high-tech field is wider and wider, and the requirement of people on the purity of the high-purity metal is higher and higher.
With the continuous development of integrated circuits to large scale and even super large scale, the size of electronic components is gradually evolving to miniaturization, and the feature size of chips is gradually reduced to the level of deep submicron and nanometer. The 12 inch, micro-nano technology and copper technology are called three major waves leading the development trend of large-scale integrated circuits. The traditional 6-8 inch integrated circuit process mainly adopts aluminum as a metal interconnection material, but with the reduction of the characteristic size of a device, the increase of the specification of a silicon wafer carrier and the improvement of the integration level, the aluminum wiring has the defects of serious electromigration, high resistivity and the like, and the circuit board can be failed when the defects are serious. Later attempts to solve the above problems have been unsuccessful using a series of aluminum-based aluminum alloys such as Al-Si, Al-Cu, Al-Si-Cu, etc. The appearance of copper and copper alloys has brought about a tremendous change in the interconnect materials of silicon chips, fundamentally solving the above-mentioned problems. The method has the advantages of low resistivity, high conductivity, few wiring process steps and the like, and has obvious advantages in high-end application of large-scale logic chips.
The copper process is completely different from the aluminum process. The copper process is to obtain a patterned wire by an embedded process. The upper and lower copper lines are interconnected by micro-vias formed by another photolithography and etching step. The current international mainstream technology has shifted from 65nm technology to 45-28 nm. The high-purity copper and the alloy thereof are mainly used for PVD coating of contacts, through holes, interconnecting wires, barrier layers and the like in the large-scale integrated circuit manufacturing as sputtering targets.
The high-purity copper target material for the large-scale integrated circuit is mainly divided into: high-purity copper target materials and high-purity copper alloy target materials, wherein the purity of copper is required to be more than 99.9999 wt% (6N). The high purity copper target material is mainly used between 90nm and 45nm, but for ultra-fine wiring with wiring width of 45nm and below and aspect ratio of more than 8, the seed layer thickness is changed to an ultra-thin film with 90nm or below, and when the seed layer is formed by 6N ultra-high purity copper target, coagulation is generated, a good seed layer cannot be formed, and the electromigration problem is more serious. Therefore, researchers have introduced copper alloy targets to suppress electromigration, improve the stability and uniformity of the copper seed layer, and avoid the formation of condensation during electroplating.
One or more alloy elements are added into the high-purity copper, so that the grain size of the high-purity copper target can be better controlled, the uniformity of the grain size of the copper target can be ensured, and the strength and the stability of the target are improved. However, since the presence of alloying elements affects the resistivity of copper, the total amount of alloying elements in the target is typically limited to less than 10% wt. For copper films and interconnects of particular use, a resistivity matching that of high purity copper is required, limiting the amount of alloying to no more than 3 wt%. At present, the main copper alloy target materials are Cu-Al and Cu-Mn alloy target materials. Alloying can reduce some of the side effects of electromigration, stress migration, corrosion, and oxidation, as compared to pure copper, while still maintaining a low overall resistance in the copper-containing conductive material.
At present, methods for manufacturing copper-manganese alloy and copper-aluminum alloy mainly comprise electron beam melting, suspension melting, zone melting and the like, and the methods have the problems of high production cost and poor product uniformity, and influence the development of high-technology fields such as integrated circuits, displays, superconductivity, quantum computing and the like. Based on the problems, the patent provides a device and a method for producing a high-purity copper alloy target material by arc melting.
Disclosure of Invention
The invention aims to provide a preparation device of a high-purity copper alloy target, which solves the problems of poor product uniformity, high possibility of pollution and complex production equipment of the existing smelting method.
The invention provides the following technical scheme:
a preparation device for a high-purity copper alloy target material is characterized by comprising the following components:
the copper base body is internally provided with a hole, and dissimilar metal is filled in the hole to form an alloy piece;
the two alloy pieces are oppositely placed in a closed vacuum chamber at intervals, and inert gas is filled in the vacuum chamber; the two alloy pieces are respectively used as a first electrode and a second electrode and are connected to a high-voltage power supply outside the vacuum chamber;
the two alloy pieces are driven by the driving device to move oppositely until an electric arc is generated, and the electric arc is gradually ablated and melts the first electrode and the second electrode along with the approach of the alloy pieces;
the melted liquid drops enter the preheated casting mould to be solidified to form the high-purity alloy target under the drive of the directionally flowing inert gas.
Preferably, the opposite ends of the two alloy pieces are melting ends, the melting ends are suspended, and liquid drops generated by the melting ends directly enter a copper casting mold to form the copper-based alloy.
Preferably, the copper matrix is high-purity copper with the purity of 99.9999 percent; the dissimilar metal is manganese or aluminum, and the purity of the dissimilar metal is 99.999%.
Preferably, the hole is located at the center of the copper matrix, and the dissimilar metal fills the hole.
Preferably, the driving device is an electric sliding table or an electric lead screw driven by a servo motor.
Preferably, a cooling medium is introduced into the casting mold, and the dripped liquid drops are rapidly cooled and formed.
The invention also aims to provide a preparation method of the high-purity copper alloy target, which is realized by the preparation device and comprises the following steps:
the preparation device is arranged in a closed vacuum chamber;
opening a hole in the copper substrate with the purity of 99.9999% from the middle, and inserting a dissimilar metal with the purity of 99.999% into the hole; manufacturing two alloy pieces according to the method;
fixing two alloy pieces oppositely on two driving devices, and connecting to a high-voltage power supply outside the vacuum chamber; filling inert gas into the vacuum chamber;
and starting the driving device to drive the two alloy pieces to move oppositely, and generating electric arc along with the gradual approach of the alloy pieces to melt the end parts of the alloy pieces and generate falling liquid drops.
Preferably, liquid drops generated at the end of the alloy part enter the preheated casting mould under the drive of the directionally flowing inert gas to form the high-purity alloy target.
Preferably, the driving device controls the moving speed of the alloy piece, so that the electric arc is continuously generated, and the alloy piece is continuously melted.
The invention also aims to provide the application of the copper-based alloy obtained by the preparation method of the high-purity copper alloy target material in integrated circuits.
The beneficial effects of the invention are:
the invention is characterized in that a hole is formed in a copper substrate, a manganese bar or an aluminum bar is inserted into the hole to form alloy pieces (the components are not limited to copper, manganese and copper, aluminum), the two alloy pieces are oppositely fixed on two driving devices, the two alloy pieces are respectively used as a first electrode and a second electrode to be connected with a high-voltage power supply, the driving devices drive the two alloy pieces to move oppositely, an electric arc is generated in the moving process, and the end part of the alloy piece is melted to generate alloy liquid drops. The preparation device of the alloy has simple and compact structure, the preparation method is simple and easy to implement, and the formed alloy has high component uniformity.
The preparation device is arranged in a closed vacuum chamber, and inert gas is filled in the vacuum chamber to prevent the alloy from being polluted by oxygen; meanwhile, the molten liquid drops are brought down by the directionally flowing inert gas and enter the preheated copper casting mold to be solidified to form a high-purity alloy target material, the liquid drops do not contact other containers in the smelting process, the alloy is prevented from being polluted by the containers, and the structure of the device has synergistic effect, so that the content of each component in the obtained alloy is accurate and controllable.
The method of the invention can directly manufacture the high-purity copper alloy target with low segregation and grain size less than 100 microns.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic structural view of the present invention;
labeled in the figure as: 1. a copper matrix; 2. a dissimilar metal; 3. a drive device; 4. a high voltage power supply; 5. a melting end; 6. a droplet; 7. casting a mold; 8. and cooling the flow channel.
Detailed Description
As shown in figure 1, the device for preparing the high-purity copper alloy target is arranged in a closed vacuum chamber and comprises a copper matrix 1, wherein the shape of the copper matrix 1 can be a rod shape, and the copper matrix is made of high-purity copper with the purity of 99.9999 percent or more. And a hole with a small diameter is formed in the center of the copper matrix, the hole penetrates through the copper matrix along the length direction, the diameter of the hole is calculated according to the mass ratio of the copper to the dissimilar metal, and the mass ratio is converted into the volume.
And filling the hole with a thin rod-shaped dissimilar metal 2 to form an alloy piece, wherein the dissimilar metal 2 can be a manganese rod or an aluminum rod with the purity of 99.999 percent. The dissimilar metal 3 fills the hole.
The two driving devices 3 are oppositely arranged with a space in between. Drive arrangement 3 is for the electronic slip table or the electronic lead screw by servo motor driven, and drive arrangement 3 is equipped with the guide rail that is used for the removal direction to the alloy spare, and servo motor accurate control alloy spare's rate of movement guarantees to continuously produce electric arc, constantly melts the alloy spare.
The two alloy pieces are respectively fixed on the two driving devices 3, and the two alloy pieces are respectively used as a first electrode and a second electrode and are connected to a high-voltage power supply 4 outside the vacuum chamber.
The two alloy pieces are driven by the driving device 3 to move towards each other and gradually approach to generate an electric arc, and the electric arc gradually ablates and melts the first electrode and the second electrode along with the approach of the alloy pieces.
The opposite end parts of the two alloy pieces are melting ends 5, the melting ends 5 are suspended, liquid drops generated by the melting ends 5 enter the preheated copper casting mold under the drive of the directionally flowing inert gas, and are solidified to form a high-purity alloy target material which is not polluted by other containers such as a crucible and the like and oxygen, and the obtained alloy has high content precision.
A cooling flow passage 8 is arranged in the casting mould 7, and the cooling flow passage 8 is filled with liquid nitrogen, cooling water and other media to quickly cool and solidify liquid drops, wherein the cooling speed can reach 103K/s, the copper-based alloy target material with the grain size less than 100 microns is directly formed, an intermediate processing procedure is not needed, and the size precision is high. The material of the casting mould can be copper or other high-heat-conductivity materials.
The preparation method of the high-purity copper alloy target comprises the following steps:
the preparation device is placed in a closed vacuum chamber;
a copper matrix 1 with the purity of 99.9999 percent or more is provided with a pore from the middle, and a manganese bar or an aluminum bar with the purity of 99.999 percent is inserted into the pore; manufacturing two alloy pieces according to the method;
fixing two alloy pieces on two driving devices 3 oppositely, suspending a melting end 5 of each alloy piece, connecting the two alloy pieces serving as a first electrode and a second electrode to a high-voltage power supply 4 outside a vacuum chamber respectively, wherein the power of the high-voltage power supply 4 is 100KW, and the voltage is 50V; filling inert gas into the vacuum chamber;
starting a driving device 3, driving the two alloy pieces to move oppositely, generating electric arc along with the gradual approach of the alloy pieces, melting a melting end 5 of the alloy pieces to generate liquid drops 6, driving the liquid drops 6 to enter a preheated copper casting mold under the drive of directionally flowing inert gas, then introducing a cooling medium into the copper casting mold, and rapidly solidifying the liquid drops to form compact and uniform copper-manganese alloy or copper-aluminum alloy;
the driving device controls the moving speed of the alloy piece, ensures that electric arc is continuously generated, continuously melts the alloy piece, and drops the alloy piece into the casting mould 7 below, so that the high-purity copper alloy target material with low segregation and the grain size of less than 100 micrometers is directly manufactured.
As an alternative, the above method is adopted to obtain the copper: 99.25 percent of manganese or 0.75 percent of aluminum, and the prepared copper-manganese alloy and copper-aluminum alloy can be applied to integrated circuits and used as high-purity copper alloy targets.
Although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A preparation device for a high-purity copper alloy target material is characterized by comprising the following components:
the copper base body is internally provided with a hole, and dissimilar metals are filled in the hole to form an alloy piece;
the two alloy pieces are oppositely placed in a closed vacuum chamber at intervals, and inert gas is filled in the vacuum chamber; the two alloy pieces are respectively used as a first electrode and a second electrode and are connected to a high-voltage power supply outside the vacuum chamber;
the two alloy pieces are driven by the driving device to move in opposite directions respectively until electric arcs are generated, and the electric arcs gradually ablate and melt the first electrode and the second electrode along with the approach of the alloy pieces;
the molten liquid drops are driven by the directionally flowing inert gas to enter the preheated casting mould to be solidified to form the high-purity alloy target.
2. The apparatus of claim 1, wherein the two opposite ends of the alloy pieces are melting ends, the melting ends are suspended, and droplets generated by the melting ends enter a mold.
3. The apparatus for preparing high-purity copper alloy target according to claim 2, wherein the copper substrate is high-purity copper with a purity of 99.9999%; the dissimilar metal is manganese or aluminum, and the purity of the dissimilar metal is 99.999%.
4. The apparatus of claim 1, wherein the hole is located at a center of the copper substrate, and the dissimilar metal fills the hole.
5. The apparatus according to claim 1, wherein the driving means is an electric slide table or an electric screw driven by a servo motor.
6. The apparatus according to claim 1, wherein a cooling medium is introduced into the mold to rapidly cool and mold the droplets.
7. A method for preparing a high-purity copper alloy target material, which is realized by the preparation device of any one of claims 1 to 6, and comprises the following steps:
the preparation device is arranged in a closed vacuum chamber;
opening a hole in the copper substrate with the purity of 99.9999% from the middle, and inserting a dissimilar metal with the purity of 99.999% into the hole; manufacturing two alloy pieces according to the method;
fixing two alloy pieces on two driving devices oppositely, and connecting the two alloy pieces with a high-voltage power supply outside a vacuum chamber; filling inert gas into the vacuum chamber;
and starting the driving device to drive the two alloy pieces to move oppositely, and generating electric arc along with the gradual approach of the alloy pieces to melt the end parts of the alloy pieces and generate falling liquid drops.
8. The method according to claim 7, wherein the droplets generated at the end of the alloy piece are driven by the directionally flowing inert gas to enter the preheated mold to form the high-purity alloy target.
9. The method according to claim 7, wherein the driving device controls the moving speed of the alloy member to ensure that the arc is continuously generated and the alloy member is continuously melted.
10. Use of the copper-based alloy obtained by the method for preparing a high purity copper alloy target according to claim 7 in integrated circuits.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210291670.8A CN114774864A (en) | 2022-03-23 | 2022-03-23 | Preparation device, preparation method and application of high-purity copper alloy target |
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| CN202210291670.8A CN114774864A (en) | 2022-03-23 | 2022-03-23 | Preparation device, preparation method and application of high-purity copper alloy target |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05311424A (en) * | 1992-05-12 | 1993-11-22 | Dowa Mining Co Ltd | Sputtering target for forming thin metal film and its production |
| CN102165093A (en) * | 2008-09-30 | 2011-08-24 | Jx日矿日石金属株式会社 | High-purity copper or high-purity copper alloy sputtering target, process for manufacturing the sputtering target, and high-purity copper or high-purity copper alloy sputtered film |
| CN103114264A (en) * | 2012-12-28 | 2013-05-22 | 中国神华能源股份有限公司 | Copper-indium alloy target for sputtering and preparation method thereof |
| CN109722564A (en) * | 2019-01-10 | 2019-05-07 | 青海聚能钛金属材料技术研究有限公司 | Ti-6242 titanium alloy and preparation method thereof |
| CN113737011A (en) * | 2021-09-08 | 2021-12-03 | 宁波江丰电子材料股份有限公司 | Preparation method of ultra-pure copper-manganese alloy |
-
2022
- 2022-03-23 CN CN202210291670.8A patent/CN114774864A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05311424A (en) * | 1992-05-12 | 1993-11-22 | Dowa Mining Co Ltd | Sputtering target for forming thin metal film and its production |
| CN102165093A (en) * | 2008-09-30 | 2011-08-24 | Jx日矿日石金属株式会社 | High-purity copper or high-purity copper alloy sputtering target, process for manufacturing the sputtering target, and high-purity copper or high-purity copper alloy sputtered film |
| CN103114264A (en) * | 2012-12-28 | 2013-05-22 | 中国神华能源股份有限公司 | Copper-indium alloy target for sputtering and preparation method thereof |
| CN109722564A (en) * | 2019-01-10 | 2019-05-07 | 青海聚能钛金属材料技术研究有限公司 | Ti-6242 titanium alloy and preparation method thereof |
| CN113737011A (en) * | 2021-09-08 | 2021-12-03 | 宁波江丰电子材料股份有限公司 | Preparation method of ultra-pure copper-manganese alloy |
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