CN114765230B - Local interconnected crystalline silicon battery structure and preparation method thereof - Google Patents
Local interconnected crystalline silicon battery structure and preparation method thereof Download PDFInfo
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- CN114765230B CN114765230B CN202210286237.5A CN202210286237A CN114765230B CN 114765230 B CN114765230 B CN 114765230B CN 202210286237 A CN202210286237 A CN 202210286237A CN 114765230 B CN114765230 B CN 114765230B
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 17
- 238000002360 preparation method Methods 0.000 title description 4
- 238000001465 metallisation Methods 0.000 claims abstract description 33
- 230000000149 penetrating effect Effects 0.000 claims abstract description 26
- 238000000608 laser ablation Methods 0.000 claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 230000035515 penetration Effects 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- -1 silver-aluminum Chemical compound 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 4
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 4
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000013316 zoning Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
Abstract
The present invention relates to the field of silicon solar cells. A local interconnection crystalline silicon battery structure comprises a back metallization pattern, a laser ablation penetrating structure and a front metallization pattern which are arranged from bottom to top, wherein the back metallization pattern and the front metallization pattern are divided into independent block metallization patterns which are equal in number and correspond to each other, the front independent block pattern corresponding to one back independent block pattern adjacent to the back independent block pattern is connected through the laser ablation penetrating structure to form an interconnection block, and a plurality of interconnection blocks form serial patterns with the same number of the two independent block metallization patterns through the interconnection patterns to serve as positive and negative poles of a crystalline silicon battery to be output.
Description
Technical Field
The present invention relates to the field of silicon solar cells.
Background
The solar cell is a photoelectric semiconductor sheet which directly generates electricity by utilizing sunlight, is also called a solar chip or a photocell, and can output voltage instantly and generate current under the condition of a loop as long as the solar cell is subjected to illuminance meeting a certain illuminance condition. Physically, solar Photovoltaic (PV) is abbreviated as Photovoltaic.
The solar light irradiates on the p-n junction of the semiconductor to form a new hole-electron pair, and under the action of an electric field built in the p-n junction, the photo-generated hole flows to the p region, and the photo-generated electron flows to the n region, so that current is generated after a circuit is connected. This is the working principle of photovoltaic solar cells.
The photo-thermal-electric conversion mode generates electricity by utilizing heat energy generated by solar radiation, generally, a solar heat collector converts the absorbed heat energy into steam of working medium, and then a steam turbine is driven to generate electricity. The former process is a light-heat conversion process; the latter process is a thermal-electric conversion process, as in ordinary thermal power generation. The disadvantage of solar thermal power generation is that it is very inefficient and costly, and its investment is estimated to be at least 5-10 times more expensive than that of a conventional thermal power station. A 1000MW solar thermal power plant requires 20 to 25 million dollars investment, with an average 1kW investment of 2000 to 2500 dollars. Therefore, the method can be applied to special occasions on a small scale, and large-scale utilization is not economically cost-effective and cannot compete with common thermal power stations or nuclear power stations.
The solar cell is a green pollution-free inexhaustible energy cell, so that the solar cell has wide significance for the application of the solar cell if the power generation efficiency of the cell can be further improved. In the photovoltaic manufacturing industry, PERC batteries are used as photovoltaic products with high cost performance, and further development still faces the problem of conversion efficiency bottleneck.
Through the zoning to the front and back surface in the PERC battery application, integrate a plurality of interval solar cell on same piece solar cell, can not further improve PERC battery's efficiency, can improve solar cell's fault-tolerant mistake moreover (there is some interval battery to go wrong or efficiency reduction promptly, still can use and efficiency reduction is not big). However, the current PERC battery still consumes a lot of energy on the assembly.
Disclosure of Invention
The technical problems to be solved by the invention are as follows: how to further reduce the end power loss of the solar cell module, thereby further improving the efficiency of the solar cell.
The technical scheme adopted by the invention is as follows: a local interconnection crystalline silicon battery structure comprises a back metallization pattern, a laser ablation penetrating structure and a front metallization pattern which are arranged from bottom to top, wherein the back metallization pattern and the front metallization pattern are divided into independent block metallization patterns which are equal in number and correspond to each other, the front independent block pattern corresponding to one back independent block pattern adjacent to the back independent block pattern is connected through the laser ablation penetrating structure to form an interconnection block, and a plurality of interconnection blocks form serial patterns with the same number of the two independent block metallization patterns through the interconnection patterns to serve as positive and negative poles of a crystalline silicon battery to be output.
The back metallization pattern comprises a plurality of columns of back independent block patterns (1), back independent main grids (2), back interconnection patterns (7) and back local penetration printing patterns (8) with equal transverse distance intervals, the back independent block patterns (1) are formed by overlapping and combining adjacent long sides of a plurality of back rectangular fine grids, the back independent main grids (2) are arranged in the center of each back independent block pattern (1), the back independent main grids (2) are perpendicular to each back rectangular fine grid, a back independent frame (9) is arranged in the center of the upper end or the center of the lower end of each back independent block pattern (1), the back independent frames (9) of adjacent back independent block patterns (1) are staggered up and down, each back independent frame (9) is a U-shaped frame surrounded by fine grid lines, the fine grid lines inside each back independent frame (9) are erased, the back local penetration printing patterns (8) of one rectangle are arranged inside each back independent frame (9), the back interconnection patterns (7) are arranged in a plurality, one end of each interconnection pattern (7) is connected with the back independent frame (2) of the adjacent back independent block patterns (1), and the other end of each interconnection pattern (7) is connected with the back independent frame (2) of the back independent block patterns (1).
The front metallization pattern comprises a plurality of rows of front independent block patterns (5), front independent main grids (4) with equal transverse distance intervals, front local penetrating printing patterns (11) and front interconnection patterns (12), the front independent block patterns (5) are formed by overlapping and combining adjacent long sides of a plurality of back rectangular thin grids, each front independent block pattern (5) corresponds to one back independent block pattern (1), the front independent main grids (4) are perpendicular to each front rectangular thin grid, a front independent frame (10) is arranged at the center of the upper end or the center of the lower end of each front independent block pattern (5), the front independent frames (10) of the adjacent front independent block patterns (5) are staggered up and down, each front independent frame (10) is a U-shaped frame surrounded by thin grid lines, the thin grid lines inside each front independent frame (10) are erased, each front independent frame (10) is internally provided with one rectangular front internal interconnection pattern (11), the front independent frames (12) are respectively arranged on the upper side and lower side, all the front independent frames (4) are connected with the front independent frames (4) in a connecting mode, the front independent frames (4) are connected with the front independent frames (4) in a local penetrating mode, the front independent frames (4) are connected with the front independent frames (4) in a whole, the rear surface partial penetration print pattern (8) and the front surface partial penetration print pattern (11) are connected by laser ablation penetration structures.
The front independent main grid (4) on the front and the back independent main grid (2) on the back are respectively connected with the anode and the cathode.
The laser ablation penetrating structure is formed by arranging three laser circles with the diameter of 0.5mm at intervals of 0.15mm, the inside of each laser circle is filled with parallel light spot straight lines, the distance between the adjacent light spot straight lines is equal to the radius of the laser light spot, and the centers of the three laser circles are positioned on a straight line parallel to the back main grid.
According to the structure requirement of the local interconnected crystalline silicon battery, a back film opening and laser ablation penetrating process is carried out on the battery piece after the P-type silicon double-sided passivation of the substrate, silver-aluminum paste is used for printing back surface local penetrating printing patterns and back surface interconnection patterns, aluminum paste is used for printing back surface independent main grid patterns, and silver paste is used for printing front surface metallization patterns.
The beneficial effects of the invention are as follows: the invention realizes the serial-parallel connection in the wafer by utilizing the laser ablation penetrating structure after adopting the independent block metallization patterns on the front and back surfaces of the solar cell, thereby reducing the efficiency loss during the serial-parallel connection between the wafers, and the invention improves the carrier service life of the silicon wafer and the solar light through the staggered structure serial connection of the independent block metallization patterns on the front and back surfacesIs used for the utilization efficiency of the system. The preparation method has simple preparation flow, the main working procedures are finished synchronously with the silicon chip through printing, the steps of subsequent work are reduced, and the manufacturing efficiency is improved. The battery piece has low output current, on the assembly end, on one hand, the packaging power loss in the assembly can be reduced, and meanwhile, the special current conduction mode can reduce the use amount of the welding strip at the assembly end, further improve the output power of the assembly, and for 166 x 166mm 2 A gain of 6-7W can be achieved.
Drawings
FIG. 1 is a schematic view of the back structure of a partially interconnected crystalline silicon cell structure of the present invention;
FIG. 2 is a schematic diagram of the front structure of a partially interconnected crystalline silicon cell structure according to the present invention;
FIG. 3 is an enlarged schematic view of portion A of FIG. 1;
FIG. 4 is an enlarged schematic view of portion B of FIG. 2;
FIG. 5 is a schematic view of a laser ablated penetrating structure;
the back independent block patterns 1, the back independent main grids 2, the back electrodes 3, the front independent main grids 4, the front independent block patterns 5, the front electrodes 6, the back interconnection patterns 7, the back local penetrating printing patterns 8 and the back independent frames 9. 10. Front independent frame 11, front partial penetration print pattern, 12, front interconnection pattern.
Detailed Description
In this embodiment, the battery plate is 166mm 2 A local interconnection crystalline silicon cell structure comprises a back metallization pattern, a laser ablation penetrating structure and a front metallization pattern from bottom to top, wherein the back metallization pattern and the front metallization pattern are divided into independent block metallization patterns (namely, a back independent block pattern and a front independent block pattern) which are equal in number and correspond to each other, the front independent block pattern corresponding to one back independent block pattern adjacent to the back independent block pattern is connected through the laser ablation penetrating structure to form an interconnection block (a back independent block pattern and a front independent block pattern), and a plurality of interconnection blocks are connected through the interconnection patterns (a back interconnection pattern and a front interconnection pattern) to form an interconnection blockThe serial patterns with the same number of the two independent block metallization patterns are used as the positive and negative electrode outputs of the crystalline silicon battery.
As shown in fig. 1 and 3, the back metallization pattern comprises a plurality of columns of back independent block patterns 1 with equal transverse distance intervals (2 mm), back independent main grids 2, back interconnection patterns 7 and back local penetration printing patterns 8, the back independent block patterns 1 are formed by overlapping and combining adjacent long sides of a plurality of back rectangular fine grids, the center of each back independent block pattern 1 is provided with one back independent main grid 2, the back independent main grids 2 are perpendicular to each back rectangular fine grid, the center of the upper end or the center of the lower end of each back independent block pattern 1 is provided with one back independent frame 9, the back independent frames 9 of the adjacent back independent block patterns 1 are staggered up and down, each back independent frame 9 is a U-shaped frame (with the depth of 5mm and the width of 3 mm) surrounded by fine grid lines, the inside of each back independent frame 9 is erased, each back local penetration printing pattern 8 of a rectangle is arranged inside each back independent frame 9, one end of each back interconnection pattern 7 (with the width of 0.1 mm) is connected with the adjacent back independent grids 2 of the back independent block patterns 1, and the other end of each back independent frame pattern 7 (with the adjacent back independent grids 2 is connected with the adjacent back local penetration patterns 1.0 mm).
The front metallization pattern comprises a plurality of rows of front independent block patterns 5 with equal transverse distance (2 mm), front independent main grids 4, front local penetrating printing patterns 11 and front interconnection patterns 12 (the width is 0.1 mm), each front independent block pattern 5 is formed by overlapping and combining adjacent long sides of a plurality of back rectangular thin grids, each front independent block pattern 5 corresponds to one back independent block pattern 1, the front independent main grids 4 are perpendicular to each front rectangular thin grid, a front independent frame 10 is arranged at the center of the upper end or the center of the lower end of each front independent block pattern 5, front independent frames 10 of the adjacent front independent block patterns 5 are staggered up and down, each front independent frame 10 is a U-shaped frame (the depth is 5mm and the width is 3 mm) surrounded by thin grid lines, the thin grid lines inside each front independent frame 10 are erased, each front independent frame 10 is internally provided with a rectangular front internal interconnection pattern 11 (the width is 1.0 mm) of the length, the front independent frames 12 are respectively connected with all front independent frames 10 on the upper side interconnection patterns through the front independent frames 10, the front independent frames 10 are connected with the front independent frames 4 through the front independent frames 4 in a surrounding mode, the front independent frames 4 are connected with the front local penetrating printing patterns 4 through the front independent frames 4, and the front independent frames are connected with the front independent frame patterns 4 through the front local penetrating printing patterns, and the front independent frame patterns are connected together through the front independent frame patterns 4 through the front independent transparent patterns, and the front independent frame patterns are printed.
The front independent main grid 4 on the front and the back independent main grid 2 on the back are respectively connected with positive and negative electrodes.
The laser ablation penetrating structure is formed by arranging three laser circles with the diameter of 0.5mm at intervals of 0.15mm, the inside of each laser circle is filled with parallel light spot straight lines, the distance between the adjacent light spot straight lines is equal to the radius of the laser light spot, and the centers of the three laser circles are positioned on a straight line parallel to the back main grid. The three laser circle areas are divided into three parts, namely three overlapping, two overlapping and zero overlapping areas.
According to the structure requirement of the local interconnected crystalline silicon battery, a back film opening and laser ablation penetrating process is carried out on the battery piece after the P-type silicon double-sided passivation of the substrate, silver-aluminum paste is used for printing back surface local penetrating printing patterns and back surface interconnection patterns, aluminum paste is used for printing back surface independent main grid patterns, and silver paste is used for printing front surface metallization patterns.
The laser spot is round, the radius can be 30-50um, the maximum power is 40W, the modulation frequency is 150-250Khz, and the marking speed is adjustable between 15000-30000 mm/min. In the back film perforating process, the laser modulation frequency is 210-250Khz, and the marking speed is 20000-25000mm/min; in the laser ablation penetration process, the laser modulation frequency is 150-180Khz, and the marking speed is 15000-18000mm/min.
Claims (3)
1. A local interconnection crystalline silicon battery structure is characterized in that: the back metallization pattern and the front metallization pattern are divided into independent block metallization patterns with the same number and corresponding to each other, the front independent block pattern corresponding to one back independent block pattern adjacent to the back independent block pattern is connected through the laser ablation penetrating structure to form an interconnection block, and the interconnection blocks form serial patterns with the same number of the two independent block metallization patterns through the interconnection patterns to serve as positive and negative poles of the crystalline silicon cell to be output; the back metallization pattern comprises a plurality of columns of back independent block patterns (1), back independent main grids (2), back interconnection patterns (7) and back local penetration printing patterns (8) with equal transverse distance intervals, the back independent block patterns (1) are formed by overlapping and combining adjacent long sides of a plurality of back rectangular fine grids, the back independent main grids (2) are arranged in the centers of the back independent block patterns (1), the back independent main grids (2) are perpendicular to each back rectangular fine grid, a back independent frame (9) is arranged in the center of the upper end or the center of the lower end of each back independent block pattern (1), the back independent frames (9) of adjacent back independent block patterns (1) are staggered up and down, each back independent frame (9) is a U-shaped frame surrounded by fine grid lines, the fine grid lines inside each back independent frame (9) are erased, a rectangular back local penetration printing pattern (8) is arranged inside each back independent frame (9), the back interconnection patterns (7) are arranged in a plurality, one end of each interconnection pattern (7) is connected with the back independent frame (1) and the other end of the back independent block patterns (1) is connected with the back independent block patterns (1); the front metallization pattern comprises a plurality of rows of front independent block patterns (5), front independent main grids (4) with equal transverse distance intervals, front local penetrating printing patterns (11) and front interconnection patterns (12), the front independent block patterns (5) are formed by overlapping and combining adjacent long sides of a plurality of back rectangular thin grids, each front independent block pattern (5) corresponds to one back independent block pattern (1), the front independent main grids (4) are perpendicular to each front rectangular thin grid, a front independent frame (10) is arranged at the center of the upper end or the center of the lower end of each front independent block pattern (5), the front independent frames (10) of the adjacent front independent block patterns (5) are staggered up and down, each front independent frame (10) is a U-shaped frame surrounded by thin grid lines, the thin grid lines inside each front independent frame (10) are erased, each front independent frame (10) is internally provided with one rectangular front internal interconnection pattern (11), the front independent frames (12) are respectively arranged on the upper side and lower side, all the front independent frames (4) are connected with the front independent frames (4) in a connecting mode, the front independent frames (4) are connected with the front independent frames (4) in a local penetrating mode, the front independent frames (4) are connected with the front independent frames (4) in a whole, the back surface partial penetration printing pattern (8) and the front surface partial penetration printing pattern (11) are connected through a laser ablation penetration structure; the laser ablation penetrating structure is formed by arranging three laser circles with the diameter of 0.5mm at intervals of 0.15mm, the inside of each laser circle is filled with parallel light spot straight lines, the distance between the adjacent light spot straight lines is equal to the radius of the laser light spot, and the centers of the three laser circles are positioned on a straight line parallel to the back main grid.
2. The locally interconnected crystalline silicon cell structure as claimed in claim 1, wherein: the front independent main grid (4) on the front and the back independent main grid (2) on the back are respectively connected with the anode and the cathode.
3. A method for preparing a local interconnect crystalline silicon cell structure as defined in claim 1, wherein: and carrying out back film opening and laser ablation penetrating processes on the battery piece after the double-sided passivation of the substrate P-type silicon according to the structure requirement of the local interconnection crystalline silicon battery, printing a back local penetrating printing pattern and a back interconnection pattern by using silver-aluminum paste on the back, printing a back independent main grid pattern by using aluminum paste on the back, and printing a front metallization pattern by using silver paste on the front.
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| CN202210286237.5A CN114765230B (en) | 2022-03-23 | 2022-03-23 | Local interconnected crystalline silicon battery structure and preparation method thereof |
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