CN114759822A - Single-phase inverter control system of single-polarity and double-polarity hybrid BCM control mode - Google Patents

Single-phase inverter control system of single-polarity and double-polarity hybrid BCM control mode Download PDF

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CN114759822A
CN114759822A CN202210540287.1A CN202210540287A CN114759822A CN 114759822 A CN114759822 A CN 114759822A CN 202210540287 A CN202210540287 A CN 202210540287A CN 114759822 A CN114759822 A CN 114759822A
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mosfet
controllable semiconductor
semiconductor switch
power device
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CN114759822B (en
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罗业城
马允添
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Sany Wisdom Guangzhou Technology Co ltd
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Sany Wisdom Guangzhou Technology Co ltd
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H02M7/53871—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
    • H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
    • H02H7/122—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for inverters, i.e. dc/ac converters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)
  • Power Conversion In General (AREA)

Abstract

The invention discloses a single-phase inverter control system with a single-polarity and double-polarity mixed BCM control mode, which comprises the following steps: comprises a modulation circuit, one side of the modulation circuit is electrically connected with a power supply VAThe modulation circuit comprises four IGBT or MOSFET controllable semiconductor switch power devices, a load resistor Z is electrically connected among the four IGBT or MOSFET controllable semiconductor switch power devices, the four IGBT or MOSFET controllable semiconductor switch power devices are respectively connected with a follow current filter circuit, and the load resistor Z is electrically connected with an LC filter; on the basis of ensuring that hysteresis control realizes soft switching, the invention realizes the characteristics of low loss, small volume and high power density by adopting unipolar BCM control for the main body, avoids frequency zero crossing and inhibits high-frequency harmonic wave by the transition of bipolar BCM, and has good frequency adaptability to load.

Description

Single-phase inverter control system of single-polarity and double-polarity hybrid BCM control mode
Technical Field
The invention belongs to the technical field of control of unidirectional inverters, and particularly relates to a single-phase inverter control system in a single-polarity and double-polarity hybrid BCM control mode.
Background
The off-grid inverter directly supplies power to the alternating-current load, so the property of the load can have great influence on the operation of the inverter. In the face of loads with variable properties, the off-grid micro inverter needs to have good load adaptability, reasonably cope with various load conditions, and can ensure normal and efficient work of the off-grid micro inverter. A good micro-inverter should have the advantages of good stability, high reliability, high power density, low cost, and good output waveform quality.
The inverter is widely used in an analog control circuit or an analog + digital hybrid control circuit, and the main analog control strategies include voltage single-loop control, peak-valley current control, current average value control and the like. Due to the adoption of hardware control, the circuit structure is more complex, the control reliability is low, and the time delay is high. The existence of the hardware control circuit increases the volume of the control board. In addition, the control method of analog control is single, the control means realized by an analog circuit mainly comprises PI control, and the control means with higher precision cannot be realized. In addition, the hardware circuit has the problems of aging and temperature drift caused by long service time, so that the control performance is reduced, and the circuit cannot work normally after a long time. It can be seen that the analog control method fails to achieve the desired performance level. With the development of control chip technology, analog control methods are gradually replaced by digital control methods. Some typical numerical control methods and their recent developments are listed below: dead beat control, state feedback control, repetitive control, fuzzy control and PID control.
Common inverter control strategies are unipolar and bipolar.
Unipolar modulation has a lower frequency characteristic, and only one set of bridge arms operates in a high-frequency state, so that switching loss is smaller, but the frequency crosses zero at the zero crossing of the load voltage. The CCM mode frequency is adaptive, the switching frequency is independent of the load current, and the conduction loss is large.
The bipolar BCM modulation has very high frequency peak, the whole frequency is very high, the switching loss is large, and the control mode is not ideal; the bipolar CCM has higher modulation frequency and has the advantage of frequency self-adaption; the unipolar CCM has low modulation frequency and self-adaptation frequency, but the low-frequency harmonic wave has long occurrence time and has great influence on the waveform quality; the unipolar BCM has low modulation frequency, the proportion of low-frequency parts which cannot be filtered is small, the loss is low, and the unipolar BCM is an ideal modulation mode.
Disclosure of Invention
The present invention is directed to a single-phase inverter control system with a single-polarity and double-polarity hybrid BCM control mode to solve the problems of the prior art.
In order to achieve the purpose, the invention provides the following technical scheme: the single-phase inverter control system comprises a modulation circuit, wherein one side of the modulation circuit is electrically connected with a power supply V AThe modulation circuit comprises four IGBT or MOSFET controllable semiconductor switch power devices, a load resistor Z is electrically connected among the four IGBT or MOSFET controllable semiconductor switch power devices, the four IGBT or MOSFET controllable semiconductor switch power devices are respectively connected with a follow current filter circuit, and the load resistor Z is electrically connected with an LC filter.
Preferably, the four IGBT or MOSFET controllable semiconductor switching power devices include an electrically connected IGBT or MOSFET controllable semiconductor switching power device Q1, an IGBT or MOSFET controllable semiconductor switching power device Q2, an IGBT or MOSFET controllable semiconductor switching power device Q3, and an IGBT or MOSFET controllable semiconductor switching power device Q4.
Preferably, the drain of the IGBT or MOSFET controllable semiconductor switching power device Q1 is connected to the power supply VAThe positive electrode of the IGBT or MOSFET controllable semiconductor switch power device Q2 is electrically connected with the power supply VAThe positive electrode of the anode is electrically connected.
Preferably, the source of the IGBT or MOSFET controllable semiconductor switching power device Q1 is electrically connected to the drain of the IGBT or MOSFET controllable semiconductor switching power device Q4, and the source of the IGBT or MOSFET controllable semiconductor switching power device Q4 is electrically connected to the power supply V AIs electrically connected with the cathode.
Preferably, the source of the IGBT or MOSFET controllable semiconductor switching power device Q2 is electrically connected with the drain of the IGBT or MOSFET controllable semiconductor switching power device Q3, and the IGBT or MOSFET controllable semiconductor switching power device Q3 is electrically connected with the drain of the IGBT or MOSFET controllable semiconductor switching power device Q2A source of a bulk switching power device Q3 at the power supply VAIs electrically connected with the cathode.
Preferably, the IGBT or MOSFET controllable semiconductor switching power device Q1 and the IGBT or MOSFET controllable semiconductor switching power device Q4 that are connected in series and the IGBT or MOSFET controllable semiconductor switching power device Q2 and the IGBT or MOSFET controllable semiconductor switching power device Q3 that are connected in series are electrically connected to both ends of the load resistance Z, the IGBT or MOSFET controllable semiconductor switching power device Q1 and the IGBT or MOSFET controllable semiconductor switching power device Q4 that are connected in series are electrically connected to the positive electrode of the load resistance Z, and the IGBT or MOSFET controllable semiconductor switching power device Q2 and the IGBT or MOSFET controllable semiconductor switching power device Q3 and the negative electrode of the load resistance Z that are connected in series are electrically connected.
Preferably, the LC filter includes an inductor L and a capacitor C5, the inductor L is electrically connected to the positive electrode of the load resistor Z, the capacitor C5 is connected to the load resistor Z in parallel, two ends of the capacitor C5 are electrically connected to the positive electrode and the negative electrode of the load resistor Z, respectively, and one end of the capacitor C5 is electrically connected between the load resistor Z and the inductor L.
Preferably, a freewheeling filter circuit composed of a diode D1 and a capacitor C1 which are connected in parallel is connected to the IGBT or MOSFET controllable semiconductor switching power device Q1 in parallel, the diode D1 and the capacitor C1 are connected to the drain and the source of the IGBT or MOSFET controllable semiconductor switching power device Q1 in parallel, a freewheeling filter circuit composed of a diode D4 and a capacitor C4 which are connected in parallel is connected to the IGBT or MOSFET controllable semiconductor switching power device Q4 in parallel, and the diode D4 and the capacitor C4 are connected to the drain and the source of the IGBT or MOSFET controllable semiconductor switching power device Q4 in parallel.
Preferably, a freewheeling filter circuit composed of a diode D2 and a capacitor C2 which are connected in parallel is connected to the IGBT or MOSFET controllable semiconductor switching power device Q2 in parallel, the diode D2 and the capacitor C2 are connected to the drain and the source of the IGBT or MOSFET controllable semiconductor switching power device Q2 in parallel, a freewheeling filter circuit composed of a diode D3 and a capacitor C3 which are connected in parallel is connected to the IGBT or MOSFET controllable semiconductor switching power device Q3 in parallel, and the diode D3 and the capacitor C3 are connected to the drain and the source of the IGBT or MOSFET controllable semiconductor switching power device Q3 in parallel.
Preferably, the method of the invention comprises the following steps:
s1, detecting a voltage zero crossing point, circularly detecting an overcurrent flag bit of the inverter inductor, switching to a protection mode if overcurrent occurs, and normally operating if overcurrent does not occur;
s2, detecting the impedance angle of the capacitive load, if the impedance angle of the load exceeds 30 degrees, adopting a unipolar CCM mode as main control, and switching to a unipolar and bipolar mixed BCM control mode between the capacitive 30 degrees and the inductive 30 degrees;
and S3, performing bipolar control transition at the frequency zero crossing point and the frequency distortion point, limiting the frequency within a reasonable range, and simultaneously keeping the advantage of unipolar BCM modulation so as to improve the load adaptability of a unipolar BCM mode.
Compared with the prior art, the invention has the beneficial effects that:
the invention provides a single-phase inverter control system with a single-polarity and double-polarity mixed BCM control mode, which realizes the characteristics of low loss, small volume and high power density by adopting the control of unipolar BCM through a main body on the basis of ensuring that hysteresis control realizes soft switching, avoids frequency zero crossing and inhibits high-frequency harmonic waves through the transition of bipolar BCM, and has good frequency adaptability to loads; theoretical analysis and experiments show that: for a load with an impedance angle of-10 degrees, the inverter has good load adaptability; the inverter has better load adaptability to loads with impedance angles of-30-10 degrees and 10-30 degrees. With the above loads, the switching frequency is limited to a certain range.
Drawings
FIG. 1 is a schematic diagram of the circuit structure of the present invention;
FIG. 2 is a schematic diagram of the SPWM waveform of the present invention;
FIG. 3 is a flow chart of the method steps of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.
Referring to fig. 1-3, the present invention provides a technical solution: the single-phase inverter control system comprises a modulation circuit, wherein one side of the modulation circuit is electrically connected with a power supply VAThe modulation circuit comprises four IGBT or MOSFET controllable semiconductor switch power devices, a load resistor Z is electrically connected among the four IGBT or MOSFET controllable semiconductor switch power devices, the four IGBT or MOSFET controllable semiconductor switch power devices are respectively connected with a follow current filter circuit, and the load resistor Z is electrically connected with an LC filter.
In order to realize the modulation of the output and the control of the frequency, in this embodiment, it is preferable that the four IGBT or MOSFET controllable semiconductor switching power devices include an electrically connected IGBT or MOSFET controllable semiconductor switching power device Q1, an IGBT or MOSFET controllable semiconductor switching power device Q2, an IGBT or MOSFET controllable semiconductor switching power device Q3, and an IGBT or MOSFET controllable semiconductor switching power device Q4.
In order to realize the adjustment of the frequency and the power supply VAIn this embodiment, preferably, the drain of the IGBT or MOSFET controllable semiconductor switching power device Q1 is electrically connected to the power supply V to complete the regulation controlAThe drain electrode of the IGBT or MOSFET controllable semiconductor switch power device Q2 is electrically connected with the power supply VAThe source of the IGBT or MOSFET controllable semiconductor switching power device Q1 is electrically connected with the drain of the IGBT or MOSFET controllable semiconductor switching power device Q4, and the source of the IGBT or MOSFET controllable semiconductor switching power device Q4 is electrically connected with the power supply VAIs negativeThe power source is electrically connected, the source electrode of the IGBT or MOSFET controllable semiconductor switch power device Q2 is electrically connected with the drain electrode of the IGBT or MOSFET controllable semiconductor switch power device Q3, and the source electrode of the IGBT or MOSFET controllable semiconductor switch power device Q3 is arranged on the power source V AIs electrically connected with the cathode.
In order to connect the load resistor Z and complete the output regulation of the load resistor Z, in this embodiment, preferably, the two ends of the load resistor Z are electrically connected between the IGBT or MOSFET controllable semiconductor switching power device Q1 and the IGBT or MOSFET controllable semiconductor switching power device Q4 which are connected in series and between the IGBT or MOSFET controllable semiconductor switching power device Q2 and the IGBT or MOSFET controllable semiconductor switching power device Q3 which are connected in series, the IGBT or MOSFET controllable semiconductor switch power device Q1 connected in series is electrically connected with the IGBT or MOSFET controllable semiconductor switch power device Q4 and the anode of the load resistor Z, the IGBT or MOSFET controllable semiconductor switch power device Q2 connected in series is electrically connected with the IGBT or MOSFET controllable semiconductor switch power device Q3 and the negative electrode of the load resistor Z.
In order to implement filtering processing on the output voltage and improve the stability of the output voltage, in this embodiment, preferably, the LC filter includes an inductor L and a capacitor C5, the inductor L is electrically connected to a positive electrode of the load resistor Z, the capacitor C5 is connected in parallel with the load resistor Z, two ends of the capacitor C5 are electrically connected to the positive electrode and the negative electrode of the load resistor Z, and one end of the capacitor C5 is electrically connected between the load resistor Z and the inductor L.
In order to realize effective freewheeling and filter control adjustment of the modulation circuit and maintain the stability of operation, in this embodiment, it is preferable that a freewheeling filter circuit composed of a diode D1 and a capacitor C1 connected in parallel with the IGBT or MOSFET controllable semiconductor switching power device Q1, the diode D1 and the capacitor C1 connected in parallel with the drain and the source of the IGBT or MOSFET controllable semiconductor switching power device Q1, a freewheeling filter circuit composed of a diode D4 and a capacitor C4 connected in parallel with the IGBT or MOSFET controllable semiconductor switching power device Q4, the diode D4 and the capacitor C4 connected in parallel with the drain and the source of the IGBT or MOSFET controllable semiconductor switching power device Q4, and a freewheeling filter circuit composed of a diode D2 and a capacitor C2 connected in parallel with the IGBT or MOSFET controllable semiconductor switching power device Q2, the diode D2 and the capacitor C2 are connected in parallel with the drain and the source of the IGBT or MOSFET controllable semiconductor switch power device Q2, the IGBT or MOSFET controllable semiconductor switch power device Q3 is connected in parallel with a follow current filter circuit consisting of a diode D3 and a capacitor C3, and the diode D3 and the capacitor C3 are connected in parallel with the drain and the source of the IGBT or MOSFET controllable semiconductor switch power device Q3.
In order to implement the regulation and control of the system, in this embodiment, preferably, the method of the present invention includes the following steps:
s1, detecting a voltage zero crossing point, circularly detecting an overcurrent flag bit of the inverter inductor, switching to a protection mode if overcurrent occurs, and normally operating if overcurrent does not occur;
s2, detecting the impedance angle of the capacitive load, if the impedance angle of the load exceeds 30 degrees, adopting a unipolar CCM mode as main control, and switching to a unipolar and bipolar mixed BCM control mode between the capacitive 30 degrees and the inductive 30 degrees;
and S3, performing bipolar control transition at the frequency zero crossing point and the frequency distortion point, limiting the frequency within a reasonable range, and simultaneously keeping the advantage of unipolar BCM modulation so as to improve the load adaptability of a unipolar BCM mode.
The working principle and the using process of the invention are as follows: detecting the voltage zero crossing point, circularly detecting the overcurrent flag bit of the inverter inductor, switching into a protection mode if overcurrent occurs, and normally operating if overcurrent does not occur; detecting a capacitive load impedance angle, if the impedance angle of the load exceeds 30 degrees, adopting a unipolar CCM mode as main control, and switching to a single-polarity and double-polarity mixed BCM control mode between the capacitive 30 degrees and the inductive 30 degrees; the frequency is transited by bipolar control at a frequency zero crossing point and a frequency distortion point, the frequency is limited in a reasonable range, and the advantage of unipolar BCM modulation is kept at the same time, so that the load adaptability of a unipolar BCM mode is improved; and in addition, an LC filter is electrically connected to a load resistor Z, voltage is filtered through an inductor L and a capacitor C5, the stability of the voltage is effectively improved, and a follow current filter circuit is connected in parallel to an IGBT or MOSFET controllable semiconductor switch power device Q1, an IGBT or MOSFET controllable semiconductor switch power device Q4, an IGBT or MOSFET controllable semiconductor switch power device Q2 and an IGBT or MOSFET controllable semiconductor switch power device Q3, so that the IGBT or MOSFET controllable semiconductor switch power device Q1, the IGBT or MOSFET controllable semiconductor switch power device Q4, the IGBT or MOSFET controllable semiconductor switch power device Q2 and the IGBT or MOSFET controllable semiconductor switch power device Q3 are protected, and stable operation is realized.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims (10)

1. A single-phase inverter control system of single and double polarity mixed BCM control mode, including the modulation circuit, its characterized in that: one side of the modulation circuit is electrically connected with a power supply VAThe modulation circuit comprises four IGBT or MOSFET controllable semiconductor switch power devices, a load resistor Z is electrically connected among the four IGBT or MOSFET controllable semiconductor switch power devices, the four IGBT or MOSFET controllable semiconductor switch power devices are respectively connected with a follow current filter circuit, and the load resistor Z is electrically connected with an LC filter.
2. The single-phase inverter control system of a single-bipolar hybrid BCM control mode as claimed in claim 1, wherein: the four IGBT or MOSFET controllable semiconductor switch power devices comprise an IGBT or MOSFET controllable semiconductor switch power device Q1, an IGBT or MOSFET controllable semiconductor switch power device Q2, an IGBT or MOSFET controllable semiconductor switch power device Q3 and an IGBT or MOSFET controllable semiconductor switch power device Q4 which are electrically connected.
3. The single-phase inverter control system of a single-bipolar hybrid BCM control mode as claimed in claim 1, wherein: the drain electrode of the IGBT or MOSFET controllable semiconductor switch power device Q1 and the power supply VAThe positive electrode of the IGBT or MOSFET controllable semiconductor switch power device Q2 is electrically connected with the power supply VAThe positive electrode of the anode is electrically connected.
4. The single-phase inverter control system of a single-bipolar hybrid BCM control mode as claimed in claim 1, wherein: the source electrode of the IGBT or MOSFET controllable semiconductor switch power device Q1 is electrically connected with the drain electrode of the IGBT or MOSFET controllable semiconductor switch power device Q4, and the source electrode of the IGBT or MOSFET controllable semiconductor switch power device Q4 is electrically connected with the power supply VAIs electrically connected with the cathode.
5. The single-phase inverter control system of a single-bipolar hybrid BCM control mode as claimed in claim 1, wherein: the source electrode of the IGBT or MOSFET controllable semiconductor switch power device Q2 is electrically connected with the drain electrode of the IGBT or MOSFET controllable semiconductor switch power device Q3, and the source electrode of the IGBT or MOSFET controllable semiconductor switch power device Q3 is arranged on the power supply V AIs electrically connected with the cathode.
6. The single-phase inverter control system of a single-bipolar hybrid BCM control mode as claimed in claim 1, wherein: the IGBT or MOSFET controllable semiconductor switch power device Q1 and the IGBT or MOSFET controllable semiconductor switch power device Q4 which are connected in series, the IGBT or MOSFET controllable semiconductor switch power device Q2 and the IGBT or MOSFET controllable semiconductor switch power device Q3 which are connected in series are electrically connected with two ends of the load resistor Z, the IGBT or MOSFET controllable semiconductor switch power device Q1 and the IGBT or MOSFET controllable semiconductor switch power device Q4 which are connected in series are electrically connected with the positive pole of the load resistor Z, and the IGBT or MOSFET controllable semiconductor switch power device Q2 and the IGBT or MOSFET controllable semiconductor switch power device Q3 and the negative pole of the load resistor Z are electrically connected in series.
7. The single-phase inverter control system of a single-bipolar hybrid BCM control mode as claimed in claim 1, wherein: the LC filter comprises an inductor L and a capacitor C5, wherein the inductor L is electrically connected to the positive electrode of the load resistor Z, the capacitor C5 is connected with the load resistor Z in parallel, two ends of the capacitor C5 are electrically connected to the positive electrode and the negative electrode of the load resistor Z respectively, and one end of the capacitor C5 is electrically connected between the load resistor Z and the inductor L.
8. The single-phase inverter control system of a single-bipolar hybrid BCM control mode as claimed in claim 1, wherein: the IGBT or MOSFET controllable semiconductor switch power device Q1 is connected with a freewheeling filter circuit consisting of a diode D1 and a capacitor C1 in parallel, the diode D1 and the capacitor C1 are connected with the drain and the source of the IGBT or MOSFET controllable semiconductor switch power device Q1 in parallel, the IGBT or MOSFET controllable semiconductor switch power device Q4 is connected with a freewheeling filter circuit consisting of a diode D4 and a capacitor C4 in parallel, and the diode D4 and the capacitor C4 are connected with the drain and the source of the IGBT or MOSFET controllable semiconductor switch power device Q4 in parallel.
9. The single-phase inverter control system of a single-bipolar hybrid BCM control mode as claimed in claim 1, wherein: the IGBT or MOSFET controllable semiconductor switch power device Q2 is connected with a freewheeling filter circuit consisting of a diode D2 and a capacitor C2 in parallel, the diode D2 and the capacitor C2 are connected with the drain and the source of the IGBT or MOSFET controllable semiconductor switch power device Q2 in parallel, the IGBT or MOSFET controllable semiconductor switch power device Q3 is connected with a freewheeling filter circuit consisting of a diode D3 and a capacitor C3 in parallel, and the diode D3 and the capacitor C3 are connected with the drain and the source of the IGBT or MOSFET controllable semiconductor switch power device Q3 in parallel.
10. The single-phase inverter control system of a single-bipolar hybrid BCM control mode as claimed in claim 1, wherein: the method comprises the following steps:
s1, detecting a voltage zero crossing point, circularly detecting an overcurrent flag bit of the inverter inductor, switching to a protection mode if overcurrent occurs, and normally operating if overcurrent does not occur;
s2, detecting the impedance angle of the capacitive load, if the impedance angle of the load exceeds 30 degrees, adopting a unipolar CCM mode as main control, and switching to a unipolar and bipolar mixed BCM control mode between the capacitive 30 degrees and the inductive 30 degrees;
and S3, performing bipolar control transition at a frequency zero crossing point and a frequency distortion point, limiting the frequency within a reasonable range, and simultaneously keeping the advantage of unipolar BCM modulation so as to improve the load adaptability of a unipolar BCM mode.
CN202210540287.1A 2022-05-18 2022-05-18 Single-phase inverter control system of single-bipolar hybrid BCM control mode Active CN114759822B (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106100412A (en) * 2016-03-21 2016-11-09 南京航空航天大学 A kind of based on critical current mode continuous control strategy inverter light load efficiency optimization method
CN107276443A (en) * 2017-06-01 2017-10-20 浙江大学 Improvement type fixed-frequency hysteresis current control method and circuit based on control type Sofe Switch
CN110380637A (en) * 2019-03-29 2019-10-25 南京航空航天大学 A kind of hybrid modulation stratgy and its control program of the full-bridge inverter based on critical current mode

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106100412A (en) * 2016-03-21 2016-11-09 南京航空航天大学 A kind of based on critical current mode continuous control strategy inverter light load efficiency optimization method
CN107276443A (en) * 2017-06-01 2017-10-20 浙江大学 Improvement type fixed-frequency hysteresis current control method and circuit based on control type Sofe Switch
CN110380637A (en) * 2019-03-29 2019-10-25 南京航空航天大学 A kind of hybrid modulation stratgy and its control program of the full-bridge inverter based on critical current mode

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