CN204465379U - The inverter circuit of Multilevel Inverters submodule and making thereof, MMC topology - Google Patents
The inverter circuit of Multilevel Inverters submodule and making thereof, MMC topology Download PDFInfo
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- CN204465379U CN204465379U CN201520022191.1U CN201520022191U CN204465379U CN 204465379 U CN204465379 U CN 204465379U CN 201520022191 U CN201520022191 U CN 201520022191U CN 204465379 U CN204465379 U CN 204465379U
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- Prior art keywords
- mosfet
- igbt
- submodule
- sic
- branch road
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The utility model relates to inverter circuit, the MMC topology of a kind of Multilevel Inverters submodule and making thereof, and comprise left branch road, right branch road, electric capacity, left branch road comprises 2 IGBT elements, and an IGBT element and the 2nd IGBT element, right branch road comprises 2 S
ic-MOSFET element, a S
ic-MOSFET element and the 2nd S
ic-MOSFET element, an IGBT element, the 2nd IGBT element, a S
ic-MOSFET element and the 2nd S
ic-MOSFET element bridge joint successively, the positive pole of electric capacity connects an IGBT element and a S
icommon point between C-MOSFET element, the negative pole of electric capacity connects the 2nd IGBT element and the 2nd S
icommon point between C-MOSFET element.The utility model adopts IGBT and S
ic-MOSFET mixed bridge submodule, has broken due to S
ithe restriction of the switching frequency that material brings, the switching frequency of General Promotion MMC-HVDC system.
Description
Technical field
The utility model relates to inverter circuit, the MMC topology of a kind of Multilevel Inverters submodule and making thereof, be specifically related to a kind of Multilevel Inverters submodule and the single-phase full bridge inverter circuit adopting it to make, MMC (modularization multi-level converter) topology, belong to field of power electronics.
Background technology
Modularization multi-level converter (modular multilevel Converter, MMC) there is active power and reactive power independently controls, output-voltage levels number many (harmonic content is low), output voltage waveforms is good, switching frequency is low, high modularization, be easy to the advantages such as expansion, Redundant Control, is the focus of recent domestic academia and industrial quarters research.MMC to succeed application in occasions such as wind-electricity integration, remote large-capacity power conveyings,, the field such as AC system asynchronous interlinkage, high voltage direct current transmission (high voltage direCt Current, HVDC), multi-terminal HVDC transmission grid-connected in regenerative resource obtains applying more widely by future.
Fig. 1 is traditional full-bridge submodule power cell, and when adopting SPWM modulation (as shown in Figure 2), its operation principle is the conducting in turn of circuit left side branch road upper and lower brachium pontis IGBT element, and its switching frequency is modulated sinusoid frequency; Right side branch road upper and lower brachium pontis IGBT element is also conducting in turn, and its switching frequency is carrier frequency.Under this shows that two branch roads are operated in different frequency environments respectively, the switching frequency of right arm element is obviously subject to due to S
i, there is following shortcoming in the restriction that material brings:
1, voltage is high, and power is large, and switching frequency is low, is usually less than 10kHz.
2, tradition is based on S
ipower device switching loss larger.
3, the volume of whole system is comparatively large, and passive component is huge, and system cost is higher.
Utility model content
The utility model, for the problems referred to above, provides a kind of based on S
ithe design of the Multilevel Inverters submodule of C power device and the inverter circuit of making thereof, MMC topology, the switching frequency of General Promotion MMC-HVDC system, reduces switching loss and effectively improves system effectiveness, reduction system bulk.
For achieving the above object, the utility model takes following technical scheme:
Multilevel Inverters submodule, comprises left branch road, right branch road, electric capacity, and left branch road comprises 2 IGBT elements, and an IGBT element and the 2nd IGBT element, right branch road comprises 2 S
ic-MOSFET element, a S
ic-MOSFET element and the 2nd S
ic-MOSFET element, an IGBT element, the 2nd IGBT element, a S
ic-MOSFET element and the 2nd S
ic-MOSFET element bridge joint successively, the positive pole of electric capacity connects an IGBT element and a S
icommon point between C-MOSFET element, the negative pole of electric capacity connects the 2nd IGBT element and the 2nd S
icommon point between C-MOSFET element.
Adopt the inverter circuit that Multilevel Inverters submodule makes, it is characterized in that comprising resistance and reactor, resistance and reactor are in series, and the resistance other end connects the common point between an IGBT element and the 2nd IGBT element, and the reactor other end connects a S
ic-MOSFET element and the 2nd S
icommon point between C-MOSFET element.
The MMC topology adopting Multilevel Inverters submodule to make, it is made up of six brachium pontis, wherein each brachium pontis by several interconnective Multilevel Inverters submodules and a reactor in series, upper and lower two brachium pontis form a facies unit, six brachium pontis have symmetry, and electric parameter and each brachium pontis reactance value of each submodule are all identical.
The switching frequency of first, second IGBT element of left branch road described in the utility model is modulated sinusoid frequency; First, second S of right branch road
ithe switching frequency of C-MOSFET element is carrier triangular wave frequency.
The utility model is owing to taking above technical scheme, and it has the following advantages:
1, IGBT and S is adopted
ic-MOSFET mixed bridge submodule, has broken due to S
ithe restriction of the switching frequency that material brings, the switching frequency of General Promotion MMC-HVDC system.
2, IGBT and S is adopted
ic-MOSFET mixed bridge submodule, reduces submodule switching loss, thus improves MMC-HVDC system effectiveness.
3, IGBT and S is adopted
ic-MOSFET mixed bridge submodule, has taken into full account economy.
4, IGBT and S is adopted
ic-MOSFET mixed bridge submodule, system realizes high frequency, and capacitance voltage ripple, output harmonic wave component diminish, and the reactor of whole system (comprising filter), electric capacity reduce much relatively, are beneficial to the volume greatly reducing converter system.
Accompanying drawing explanation
Fig. 1 is the structural representation of the full-bridge submodule unit of prior art.
Fig. 2 is the oscillogram of SPWM modulation.
Fig. 3 is the structural representation of Multilevel Inverters submodule described in the utility model.
Fig. 4 is the structural representation of the inverter circuit that Multilevel Inverters submodule described in the utility model makes.
Fig. 5 is the structural representation of the MMC topology that Multilevel Inverters submodule makes.
Embodiment
Be described in detail of the present utility model below in conjunction with drawings and Examples.
Embodiment 1:
Multilevel Inverters submodule shown in Figure 3, adopts IGBT and S
ic-MOSFET mixed bridge sub modular structure designs, comprise left branch road Z, right branch road Y, electric capacity C, left branch road Z, right branch road Y, electric capacity C three are in parallel, and left branch road Z comprises 2 IGBT elements, one IGBT element 1 and the 2nd IGBT element 2, right branch road Y comprises 2 S
ic-MOSFET element, a S
ic-MOSFET element 3 and the 2nd S
ic-MOSFET element 4, one IGBT element 1, the 2nd IGBT element 2, a SiC-MOSFET element 3 and the 2nd SiC-MOSFET element 4 bridge joint successively, that is: the emitter of an IGBT element 1 connects the collector electrode of the 2nd IGBT element 2, the emitter of the 2nd IGBT element 2 connects the source electrode of the 2nd SiC-MOSFET element 4, the drain electrode of the 2nd SiC-MOSFET element 4 connects the source electrode of a SiC-MOSFET element 3, and the drain electrode of a SiC-MOSFET element 3 connects the collector electrode of an IGBT element 1.The positive pole of electric capacity C connects the common point O between an IGBT element 1 and a SiC-MOSFET element 3, and the negative pole of electric capacity connects the common point O ' between the 2nd IGBT element 2 and the 2nd SiC-MOSFET element 4.
Left branch road Z switch element described in the utility model adopts traditional IGBT, and right branch road Y switch element then adopts New type of S
ic-MOSFET.The switching frequency of IGBT is modulating wave sine wave freuqency; S
ithe switching frequency of C-MOSFET element is carrier triangular wave frequency.
Due to S
ic device has the features such as high voltage-rated, low-loss and high switching speed on the whole, S
ithe dynamic property of C-MOSFET is better than conventional I GBT, i.e. S
ic device is compared to based on S
ithe power device of material has more excellent switching characteristic.It can by existing S
ithe switching frequency of device promotes several times, and Simultaneous Switching loss does not increase.
Embodiment 2:
Shown in Figure 4: to adopt the inverter circuit that Multilevel Inverters submodule makes, adopt IGBT and S
ic-MOSFET mixed bridge sub modular structure designs, comprise left branch road Z, right branch road Y, electric capacity C, resistance R and reactor G, left branch road Z, right branch road Y, electric capacity C three are in parallel, and left branch road Z comprises 2 IGBT elements, one IGBT element 1 and the 2nd IGBT element 2, right branch road Y comprises 2 S
ic-MOSFET element, a S
ic-MOSFET element 3 and the 2nd S
ic-MOSFET element 4, one IGBT element 1, the 2nd IGBT element 2, a SiC-MOSFET element 3 and the 2nd SiC-MOSFET element 4 bridge joint successively, that is: the emitter of an IGBT element 1 connects the collector electrode of the 2nd IGBT element 2, the emitter of the 2nd IGBT element 2 connects the source electrode of the 2nd SiC-MOSFET element 4, the drain electrode of the 2nd SiC-MOSFET element 4 connects the source electrode of a SiC-MOSFET element 3, and the drain electrode of a SiC-MOSFET element 3 connects the collector electrode of an IGBT element 1.The positive pole of electric capacity C connects the common point O between an IGBT element 1 and a SiC-MOSFET element 3, and the negative pole of electric capacity connects the common point O ' between the 2nd IGBT element 2 and the 2nd SiC-MOSFET element 4.Resistance R and reactor G is in series, and the resistance R other end connects the common point A between an IGBT element 1 and the 2nd IGBT element, and the reactor other end connects a S
ic-MOSFET element and the 2nd S
icommon point B between C-MOSFET element.
Left branch road Z switch element described in the utility model adopts traditional IGBT, and right branch road Y switch element then adopts New type of S
ic-MOSFET.The switching frequency of IGBT is modulating wave sine wave freuqency; S
ithe switching frequency of C-MOSFET element is carrier triangular wave frequency.Suppose that in circuit, the sinusoidal wave frequency of modulating wave is f, carrier triangular wave frequency is f
c, because right branch road Y have employed S
ic-MOSFET switch element, compared to conventional carrier frequency probably in the situation of 10kHz, the carrier frequency in this circuit can be promoted to about 20k ~ 50kHz.Meanwhile, S
ic device has excellent high frequency characteristics, and its switching loss is very little, even lower than the S of low frequency operation
ipower device, the raising of switching frequency can't bring the increase of switching loss.The raising of carrier frequency, can reduce total harmonic distortion amount, and electric current is more level and smooth, and noise reduces, simultaneously frequency ratio K=f
c/ f becomes large.
Embodiment 3:
As shown in Figure 5, the MMC topology adopting Multilevel Inverters submodule to make, it is made up of six brachium pontis 5, each brachium pontis 5 is in series by several interconnective Multilevel Inverters submodule SM and reactor L, upper and lower two brachium pontis form a facies unit, six brachium pontis have symmetry, and electric parameter and each brachium pontis reactance value of each submodule are all identical.As shown in Figure 3, this structure adopts three-phase six branch structure to the structure of Multilevel Inverters submodule SM, and each brachium pontis 5 is formed by some sub module cascade, configures a reactor L to suppress circulation and fault current climbing simultaneously.By IGBT and S
ithe Multilevel Inverters submodule of C-MOSFET mixing composition can regard a mini power converter as, and the raising of the switching frequency of each unit must make overall MMC be operated in the environment of high frequency.Meanwhile, S
ic device has excellent high frequency characteristics, and its switching loss is very little, even lower than the S of low frequency operation
ipower device, so just can reduce system loss further, adopt S simultaneously
ithe system radiating of C device requires not improve even also may reduce.Similar with single-phase full bridge inverter circuit, the raising of switching frequency, can reduce total harmonic distortion amount (THD), and electric current is more level and smooth, and noise reduces.
Embodiment in the utility model, only for being described the utility model, does not form the restriction to right, other equivalent in fact substituting, all in the utility model protection range that those skilled in that art can expect.
Claims (4)
1. Multilevel Inverters submodule, comprise left branch road, right branch road, electric capacity, left branch road comprises 2 IGBT elements, one IGBT element and the 2nd IGBT element, it is characterized in that: right branch road comprises 2 SiC-MOSFET elements, one SiC-MOSFET element and the 2nd SiC-MOSFET element, one IGBT element, 2nd IGBT element, one SiC-MOSFET element and the 2nd SiC-MOSFET element bridge joint successively, the positive pole of electric capacity connects the common point between an IGBT element and a SiC-MOSFET element, the negative pole of electric capacity connects the common point between the 2nd IGBT element and the 2nd SiC-MOSFET element.
2. the inverter circuit of Multilevel Inverters submodule making, it is characterized in that: comprise resistance, reactor and Multilevel Inverters submodule according to claim 1, resistance and reactor are in series, the resistance other end connects the common point between an IGBT element 1 and the 2nd IGBT element, and the reactor other end connects the common point between a SiC-MOSFET element and the 2nd SiC-MOSFET element.
3. Multilevel Inverters submodule make MMC topology, it is characterized in that: comprise Multilevel Inverters submodule according to claim 1, the MMC topology adopting Multilevel Inverters submodule to make, it is made up of six brachium pontis, wherein each brachium pontis by several interconnective Multilevel Inverters submodules and a reactor in series, upper and lower two brachium pontis form a facies unit, and six brachium pontis have symmetry, and electric parameter and each brachium pontis reactance value of each submodule are all identical.
4. Multilevel Inverters submodule according to claim 1, is characterized in that: the switching frequency of IGBT element is modulated sinusoid frequency; The switching frequency of first, second SiC-MOSFET element of right branch road is carrier triangular wave frequency.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520022191.1U CN204465379U (en) | 2015-01-13 | 2015-01-13 | The inverter circuit of Multilevel Inverters submodule and making thereof, MMC topology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520022191.1U CN204465379U (en) | 2015-01-13 | 2015-01-13 | The inverter circuit of Multilevel Inverters submodule and making thereof, MMC topology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204465379U true CN204465379U (en) | 2015-07-08 |
Family
ID=53672201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520022191.1U Withdrawn - After Issue CN204465379U (en) | 2015-01-13 | 2015-01-13 | The inverter circuit of Multilevel Inverters submodule and making thereof, MMC topology |
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|---|---|
| CN (1) | CN204465379U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104617803A (en) * | 2015-01-13 | 2015-05-13 | 嘉兴清源电气科技有限公司 | Multi-level converter submodule as well as inverter circuit and MMC topology both manufactured from such submodule |
| US10250156B2 (en) | 2017-01-05 | 2019-04-02 | General Electric Company | Cryogenic fuel power system |
-
2015
- 2015-01-13 CN CN201520022191.1U patent/CN204465379U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104617803A (en) * | 2015-01-13 | 2015-05-13 | 嘉兴清源电气科技有限公司 | Multi-level converter submodule as well as inverter circuit and MMC topology both manufactured from such submodule |
| CN104617803B (en) * | 2015-01-13 | 2018-07-06 | 嘉兴清源电气科技有限公司 | Multilevel Inverters submodule and its inverter circuit of making, MMC topologys |
| US10250156B2 (en) | 2017-01-05 | 2019-04-02 | General Electric Company | Cryogenic fuel power system |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20150708 Effective date of abandoning: 20180706 |