CN114756070B - Design method of silicon optical chip with automatic temperature control function - Google Patents
Design method of silicon optical chip with automatic temperature control function Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 86
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 86
- 239000010703 silicon Substances 0.000 title claims abstract description 86
- 230000003287 optical effect Effects 0.000 title claims abstract description 83
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000013461 design Methods 0.000 title claims abstract description 17
- 239000010409 thin film Substances 0.000 claims abstract description 43
- 238000010438 heat treatment Methods 0.000 claims abstract description 31
- 239000010408 film Substances 0.000 claims abstract description 28
- 230000033228 biological regulation Effects 0.000 claims abstract description 3
- 230000007613 environmental effect Effects 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 description 6
- 238000004364 calculation method Methods 0.000 description 5
- 230000010354 integration Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
- G05D23/24—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature the sensing element having a resistance varying with temperature, e.g. a thermistor
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Abstract
The invention provides a design method of an autonomous temperature control silicon optical chip, which relates to the technical field of silicon optical chips, and can easily convert an original complicated silicon optical chip temperature control system into a simple passive autonomous temperature control system by utilizing a very simple parallel circuit system, and meanwhile, additional elements and chip reject ratio are reduced; according to the design method, a thermistor is additionally arranged on a silicon optical chip, so that the thermistor and a thin film resistor of the silicon optical chip are connected in parallel to form a parallel circuit, and a fixed current is input into the parallel circuit; according to the phenomenon that the resistance of the thermistor is changed along with the temperature change so as to change the current of the thermistor branch, the current regulation of the film resistor branch is realized, and the autonomous temperature control of the silicon optical chip is further realized; the thermistor is a thermistor with a negative temperature coefficient, and the thin film resistor is a thin film heating resistor.
Description
Technical Field
The invention relates to the technical field of silicon optical chips, in particular to a design method of an autonomous temperature control silicon optical chip.
Background
With the development of the optical communication network to the integration, low power consumption, intelligence and large capacity, the silicon optical technology in the high-speed optical chip has the advantages of low cost, high integration level, large bandwidth and the like, can meet the requirements of ever-increasing data service, network resources and the like, and is one of the main technologies actively laid out and researched and developed by various manufacturers worldwide. However, since silicon materials have a high thermo-optic coefficient, silicon optical devices can cause a change in refractive index of light with a change in temperature, thereby causing a change in transmittance of the device. Therefore, a temperature control device is added to the silicon optical device to adjust the transmittance change of the silicon optical device caused by the temperature change of the external environment in real time.
The current common solution is to realize the closed-loop locking and control of the silicon optical chip through a peripheral control circuit, a monitor photo-diode (MPD) and a thin film heating resistor on the silicon optical chip when the ambient temperature changes. Taking a silicon optical mach-zehnder modulator as an example, a specific implementation manner is shown in fig. 1, and the working process includes:
1. When the ambient temperature changes, the MPD output current of the chip changes and is expressed as delta i;
2. converting the current change into voltage change through the transimpedance of the peripheral circuit, representing the voltage change as Deltav, and converting the voltage change into a digital signal through the ADC;
3. The digital signal is compared with the original set reference value in the microprocessor, the voltage change which needs to be adjusted is calculated, and an adjusting signal is output;
4. The adjusting signal is converted into a voltage signal through a DAC circuit and is loaded to two ends of a film heating resistor of the chip;
5. the voltage at two ends of the film heating resistor changes, so that the temperature of a device on the silicon optical chip changes, and the influence caused by the ambient temperature is counteracted;
6. the closed-loop locking circuit can meet the temperature control of silicon optical chips with different requirements according to the precision and time interval of the peripheral circuit.
In the above-mentioned prior art scheme, the peripheral circuit and the silicon optical chip are required to work together to complete the overall temperature feedback control. When the number of channels to be controlled is large, multiple components are required to work together to meet the control of each channel on the influence of temperature change. Thus, the high integration of the silicon optical chip is reduced due to the increase of external control elements; meanwhile, due to the increase of the number of the silicon photo MPDs, the yield of the whole silicon photo chip is reduced, and the cost is increased.
Accordingly, there is a need to develop a new method of designing a silicon optical chip with self-temperature control to address the deficiencies of the prior art and solve or mitigate one or more of the problems described above.
Disclosure of Invention
In view of this, the invention provides a design method of an autonomous temperature control silicon optical chip, which adopts a mode that a thermistor with a negative temperature coefficient is connected with a thin film resistor of the chip in parallel to convert the influence of temperature change on the resistance value of the thermistor into the influence on the current flowing through the thin film resistor, thereby realizing the autonomous temperature control effect on the silicon optical chip.
The invention provides a design method of an autonomous temperature control silicon optical chip, which comprises the steps of adding a thermistor on the silicon optical chip, enabling the thermistor and a thin film resistor of the silicon optical chip to be connected in parallel to form a parallel circuit, and inputting fixed current into the parallel circuit;
according to the phenomenon that the resistance of the thermistor is changed along with the temperature change so as to change the current of the thermistor branch, the current regulation of the film resistor branch is realized, and the autonomous temperature control of the silicon optical chip is further realized.
In aspects and any one of the possible implementations described above, there is further provided an implementation in which the thermistor is mounted on a silicon photo chip.
In the aspect and any possible implementation manner as described above, there is further provided an implementation manner, the thermistor is a thermistor with a negative temperature coefficient, and the thin film resistor is a thin film heating resistor. The thin film heating resistor refers to a thin film resistor which heats the silicon optical chip and the environment where the silicon optical chip is located by applying voltage.
In accordance with aspects and any possible implementation manner of the foregoing, there is further provided an implementation manner, where the thin film resistor branch includes a thin film resistor and an adjustable resistor, and the thin film resistor and the adjustable resistor are connected in series.
In aspects and any possible implementation manner as described above, there is further provided an implementation manner, where the adjustable resistor is disposed on a circuit board for fixing the silicon optical chip.
In accordance with the above aspect and any possible implementation manner, there is further provided an implementation manner, where the thin film resistor branch includes a thin film resistor and a fixed value resistor, and the thin film resistor and the fixed value resistor are connected in series.
In the aspect and any possible implementation manner as described above, there is further provided an implementation manner, where the fixed-value resistor is mounted on the silicon optical chip.
In the aspect and any possible implementation manner as described above, there is further provided an implementation manner, in which a fixed current is input to the parallel circuit, in which: and a constant current power supply is arranged outside the silicon optical chip, and the two poles of the constant current power supply are respectively and electrically connected with the two poles of the parallel circuit.
In the aspects and any possible implementation manners as described above, there is further provided an implementation manner, where the actual operating temperature t wt of the internal device of the silicon optical chip is:
twt＝C·IH 2+t
wherein, C is a fixed adjustment coefficient, I H is the current of the thin film resistor branch after the change of the ambient temperature, and t is the changed ambient temperature.
In the aspects and any possible implementation manner described above, there is further provided an implementation manner, where the calculation formula of I H is:
Wherein I is the total current flowing through the parallel circuit, R H is the resistance of the film resistor, R C is the resistance of other resistors connected in series on the film resistor branch, R t is the resistance of the thermistor after the environmental temperature is changed, and
Wherein R t0 is the initial resistance value of the thermistor, B is the temperature coefficient, t 0 is the initial ambient temperature, and t is the changed ambient temperature.
Compared with the prior art, one of the technical schemes has the following advantages or beneficial effects: the invention utilizes the extremely simple parallel circuit system to easily convert the original complicated silicon optical chip temperature control system into simple passive automatic temperature control, reduces external complex control elements, and fully displays the advantage of high integration of the silicon optical chip; meanwhile, the reduction of the additional components reduces the reject ratio of the chip, so that the cost of the silicon optical chip is greatly reduced.
Of course, it is not necessary for any of the products embodying the invention to achieve all of the technical effects described above at the same time.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a prior art silicon photonics chip temperature control solution;
FIG. 2 is a schematic flow chart of a self-control Wen Guiguang chip design method according to one embodiment of the present invention;
FIG. 3 is a schematic plan view of a silicon optical chip and an external circuit according to an embodiment of the present invention;
FIG. 4 is a schematic plan view of a silicon optical chip and an external circuit design according to an embodiment of the present invention;
FIG. 5 is a graph of MZI transmittance versus temperature provided by one embodiment of the present invention;
FIG. 6 is a graph of sheet resistance versus waveguide temperature provided by one embodiment of the present invention; wherein, (a) is a graph of the relationship between the film resistance and the waveguide temperature field, and (b) is a graph of the relationship between the waveguide temperature and the square of the film resistance current;
FIG. 7 is a graph of waveguide temperature versus ambient temperature for various conditions provided by one embodiment of the present invention.
Detailed Description
For a better understanding of the technical solution of the present invention, the following detailed description of the embodiments of the present invention refers to the accompanying drawings.
It should be understood that the described embodiments are merely some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention provides a very simple self-control Wen Guiguang chip design method, which utilizes a thermistor with a Negative Temperature Coefficient (NTC) to be connected in parallel with a thin film heating resistor on a silicon optical chip through the optimization of a silicon optical chip process, under the condition of inputting fixed current, the NTC thermistor can adjust the current output to the thin film heating resistor in real time along with the change of the ambient temperature, so that the working temperature of the NTC thermistor changes, and the temperature of the underlying silicon optical device is regulated, thereby realizing autonomous temperature control. Specifically, a thermistor with a negative temperature coefficient is attached to a silicon optical chip, the thermistor and a film heating resistor of the silicon optical chip are connected in parallel and are connected with a constant current source together, and then the heating capacity of the film heating resistor can be automatically changed along with the temperature of the external environment by matching with the related circuit design, so that the transmittance fluctuation of a target silicon optical device is stabilized in a certain small range, and the design of a self-control temperature system is realized.
A schematic flow chart of a specific implementation of the present invention is shown in fig. 2. The working contents comprise:
1. When the ambient temperature changes, the resistance of the thermistor is as follows:
Wherein R t0 is the initial resistance value of the thermistor, B is the temperature coefficient, t 0 is the initial ambient temperature, and t is the changed ambient temperature;
2. the change in resistance of the thermistor causes the current on the thin film heating resistor to change to:
wherein I is the total current flowing through the thermistor and the film heating resistor, and the total current is constant voltage and is not adjustable in the closed loop control process. But during the initialization process, it is necessary to adjust to the proper current. Specific adjustment procedures are set forth below.
I H is the current flowing through the thin film heating resistor after the change of the ambient temperature, R H is the resistance value of the thin film heating resistor, and R C is a fixed value resistor connected in series on a branch of the thin film resistor, and the function of assisting in distributing the current is achieved.
3. The temperature of the silicon optical device after the current change of the film heating resistor (namely the current actual working temperature t wt of the internal device of the silicon optical chip) is as follows:
twt＝C·IH 2+t
Wherein C is a fixed adjustment coefficient, and is related to parameters such as material heat conductivity, system heat dissipation condition, distance between the thin film resistor and the silicon optical device, geometric dimension of the thin film resistor and the like, and is irrelevant to initial temperature. The calculation method of specific C is set forth below.
4. The temperature change caused by the change of the film heating resistor current is counteracted with the ambient temperature change, so that the silicon optical device does not change along with the ambient temperature.
|C·IH 2-C·IH0 2|＝|t-t0|
I.e., t wt＝twt0, the operating temperature of the silicon optical device is unchanged.
And step 2, providing constant current through the constant current chip, and calibrating the chip in a factory through the initial current when the factory is set, so as to adjust the silicon optical device to work under a proper light transmittance condition.
And 3, the calculation of the specific C can be carried out by modeling calculation on the heating film and the silicon optical device through simulation software, the temperature field of the silicon optical device under the corresponding current is simulated through giving different currents to the heating film, and the temperature is in direct proportion to the square of the current according to Joule's law and Fourier heat conduction law, so that the temperature t wt of the silicon optical device obtained through simulation is linearly fitted with the square I H 2 of the current corresponding to the resistance of the film, and the proportionality coefficient of the temperature t wt and the square I H 2 is the value of the regulating coefficient C.
Example 1:
as shown in FIG. 3, a thin film heating resistor is deposited above a silicon optical device in a chip, a constant resistor is connected in series in the chip and then connected with a thermistor in parallel, a pad led out to a PCB through a gold wire is connected with a constant current power supply chip, the other end of the pad is grounded, the grounding refers to the negative electrode of the constant current power supply chip, and the negative electrode of the constant current power supply chip and the ground end of the whole PCB are usually the same. In the embodiment, the thermistor is arranged on the silicon optical chip, the connection and fixation of the thermistor are realized by arranging the bonding pads on the silicon optical chip, and then two ends of the thermistor are respectively connected with two poles of the constant current power supply chip.
Example 2:
As shown in fig. 4, the same embodiment 1 is different in that a resistor connected in series with a thin film heating resistor is soldered on a PCB board outside the chip, and is connected to the chip area by a gold wire, and the resistor can be adjusted according to circumstances. In fig. 4, 1 is a chip, 2 is a thin film heating resistor, 3 is a thermistor, 4 is an adjustable resistor, 5 is a constant current power supply, and 6 is a PCB board.
The feasibility of the above embodiment scheme is analyzed as follows.
The analysis is performed by taking a silicon optical Mach-Zehnder Interferometer (MZI) interferometer as an example, and the structure is widely applied to various silicon optical devices, including modulators, filters, optical switches, attenuators and the like.
For a silicon optical MZI interferometer, its transfer function is:
I0/Ii＝0.5×[1+cos(βΔL)]
Where β=2ρn eff/λ is the propagation constant of the silicon optical waveguide, n eff is the effective refractive index, and is the wavelength of the light. When the chip temperature changes, the effective refractive index changes, and the transmissivity of the MZI interferometer changes. The effective refractive index of silicon at ordinary temperature was 2.7, the wavelength of input light was 1310nm, the thermo-optic coefficient of silicon was 1.84×10 -4K-1, and the transmittance of the silicon optical MZI interferometer was changed with temperature as shown in fig. 5.
The change in effective refractive index caused by the temperature change causes a change in the operating state, and thus a temperature control system is required for temperature control.
The embodiment of the disclosure realizes automatic adjustment through negative feedback of the thermistor, and performs feasibility verification according to the following table parameters (the influence of temperature change on the resistivity of the film is ignored in the table). Embodiments of the present disclosure claim an autonomously temperature controlled chip design, rather than specific parameters.
Table 1 scheme feasibility analysis specific parameter table
The calculation process is as follows:
1. it is not limited to the case where the initial temperature t 0 is 25 ℃, and the resistance R t0 of the thermistor is 40Ω;
2. when the temperature rises by 20 ℃, the ambient temperature t is 45 ℃. The resistance of the thermistor changes as:
3. the resistance of the film resistor is as follows:
Wherein ρ is the resistivity, l is the length, and A is the cross-sectional area;
4. the current flowing through the film heating resistor is thus:
The current flowing through the film heating resistor at the initial temperature is as follows:
wherein I is a constant current source with the size of 0.055A;
5. The temperature of the waveguide after the current change of the film heating resistor is as follows:
twt＝C·IH 2+t＝77.7℃；
whereas the temperature of the waveguide at the initial temperature is:
twt0＝C·IH0 2+t0＝77.6℃；
Wherein C is a fixed adjustment coefficient, and is related to parameters such as material heat conductivity, system heat dissipation condition, distance between a thin film resistor and a silicon optical device, geometric dimension of the thin film resistor and the like, and the size of the thin film resistor is 35692; the relationship obtained by the simulation is shown in fig. 6. In fig. 6, (a) is a graph of a film heating resistance versus waveguide temperature field distribution, and (b) is a graph of waveguide temperature versus film heating resistance current square.
The environmental temperature change is counteracted with the temperature change generated by the film heating resistor, so that automatic temperature adjustment is realized, the working temperature of the silicon optical device is basically unchanged, and the silicon optical device is kept stable. FIG. 7 is a graph showing waveguide temperatures corresponding to the unheated and heated resistances, respectively, at ambient temperatures ranging from 0℃to 70℃where the sheet resistance passing current in the unheated resistance scheme is constant and consistent with the sheet resistance passing current in the heated resistance scheme at 25 ℃.
It can be seen that when the design method of the embodiments of the present disclosure is used, the operating temperature range of the waveguide is within 77-86 ℃, the variation range is less than 10 ℃, and remains substantially unchanged; for the unheated thermistor scheme, the waveguide temperature varies linearly with ambient temperature.
The design method of the silicon optical chip with the automatic temperature control function provided by the embodiment of the application is described in detail. The above description of embodiments is only for aiding in the understanding of the method of the present application and its core ideas; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present application, the present description should not be construed as limiting the present application in view of the above.
It should also be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a product or system that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such product or system. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a commodity or system comprising such elements. By "substantially" is meant that within an acceptable error range, a person skilled in the art is able to solve the technical problem within a certain error range, substantially achieving the technical effect.
Claims (7)
1. A design method of an autonomous temperature control silicon optical chip is characterized in that a thermistor is attached to the silicon optical chip by the design method, so that the thermistor and a thin film resistor of the silicon optical chip are connected in parallel to form a parallel circuit, and a fixed current is input to the parallel circuit;
According to the phenomenon that the resistance of the thermistor is changed along with the temperature change so as to change the current of the thermistor branch, the current regulation of the film resistor branch is realized, and the autonomous temperature control of the silicon optical chip is further realized;
the working content comprises: 1) When the ambient temperature changes, the resistance of the thermistor is as follows:
wherein R t0 is the initial resistance value of the thermistor, B is the temperature coefficient, t 0 is the initial ambient temperature, and t is the changed ambient temperature;
2) The change in the resistance of the thermistor results in a change in the current on the film heating resistor as: Wherein I is total current flowing through the thermistor and the thin film resistor, R H is the resistance value of the thin film resistor, R C is other resistance values connected in series on the branch of the thin film resistor, and Rt is the resistance value of the thermistor after the environmental temperature is changed;
3) The temperature t wt of the silicon optical chip after the current change of the film heating resistor is as follows:
twt＝C·IH 2+t
Wherein C is a fixed adjustment coefficient, I H is the current of the thin film resistor branch after the ambient temperature is changed, and t is the changed ambient temperature;
4) The temperature change caused by the change of the film heating resistor current is counteracted with the ambient temperature change, so that the silicon optical chip does not change along with the ambient temperature:
c and I H 2-C·IH0 2|＝|t-t0, i.e. t wt＝twt0, the silicon optical device works
The temperature does not change.
2. The method for designing a silicon optical chip with self-temperature control as defined in claim 1, wherein the thermistor is a negative temperature coefficient thermistor.
3. The method of claim 1, wherein the thin film resistor branch comprises a thin film resistor and an adjustable resistor, and the thin film resistor and the adjustable resistor are connected in series.
4. The method for designing a silicon optical chip with self temperature control as defined in claim 3, wherein the adjustable resistor is disposed on a circuit board for fixing the silicon optical chip.
5. The method of claim 1, wherein the thin film resistor branch comprises a thin film resistor and a fixed resistor, and the thin film resistor and the fixed resistor are connected in series.
6. The method for designing a silicon optical chip with self-temperature control as defined in claim 5, wherein the constant value resistor is mounted on the silicon optical chip.
7. The method for designing an autonomous temperature controlled silicon optical chip according to claim 1, wherein the manner of inputting a fixed current to the parallel circuit is: and a constant current power supply is arranged outside the silicon optical chip, and the two poles of the constant current power supply are respectively and electrically connected with the two poles of the parallel circuit.
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