CN114752995A - Thermal field control device for crystal pulling furnace and crystal pulling furnace - Google Patents
Thermal field control device for crystal pulling furnace and crystal pulling furnace Download PDFInfo
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- CN114752995A CN114752995A CN202210616029.7A CN202210616029A CN114752995A CN 114752995 A CN114752995 A CN 114752995A CN 202210616029 A CN202210616029 A CN 202210616029A CN 114752995 A CN114752995 A CN 114752995A
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- single crystal
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/206—Controlling or regulating the thermal history of growing the ingot
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- Crystallography & Structural Chemistry (AREA)
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- Metallurgy (AREA)
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Abstract
The embodiment of the invention discloses a thermal field control device for a crystal pulling furnace and the crystal pulling furnace, wherein the thermal field control device comprises: the guide cylinder of the crystal pulling furnace is fixedly arranged in the crystal pulling furnace; a heat insulator disposed between a silicon melt and a single crystal silicon rod pulled from the silicon melt to constitute a heat shield for blocking heat radiated from the silicon melt to the single crystal silicon rod together with the guide cylinder, wherein the heat insulator is made of a material suitable for mechanical transmission; a heat shield driver for driving the heat shield to move to vary the spacing between the bottom of the heat shield and the liquid level of the silicon melt and correspondingly vary the amount of heat radiated from the silicon melt to the single crystal silicon rod to achieve a desired axial temperature gradient in the single crystal silicon rod.
Description
Technical Field
The invention relates to the field of semiconductor silicon wafer production, in particular to a thermal field control device for a crystal pulling furnace and the crystal pulling furnace.
Background
For the production of semiconductor silicon wafers, silicon wafers of the desired quality are usually obtained by first pulling a single-crystal silicon rod by a direct method, followed by slicing, grinding, polishing and possibly epitaxial growth. The device used for pulling the single crystal silicon rod by the direct method is a crystal pulling furnace, a crucible is placed in a furnace body of the crystal pulling furnace, a high-purity polycrystalline silicon material is contained in the crucible, a silicon melt is obtained by heating, seed crystals are immersed in the silicon melt and subjected to the processes of seeding, shouldering, constant diameter, ending, cooling and the like, and then the single crystal silicon rod can be finally obtained.
With the shortening of semiconductor manufacturing processes, the requirements for silicon wafers are higher and higher, and silicon wafers without crystal growth defects are generally required, which requires effective control of crystal growth defects in the process of pulling a single crystal silicon rod. According to the V/G theory for determining the crystal growth defect, the crystal growth defect in the process of drawing the single crystal silicon rod is related to the axial temperature gradient G of the single crystal silicon rod besides the drawing speed V, the axial temperature gradient G of the single crystal silicon rod depends on the design of a thermal field, and the good design of the thermal field can be beneficial to the fact that the single crystal silicon rod has no growth defect.
The factors influencing the thermal field around the pulled single crystal silicon rod are comprehensive, the heat in the pulling furnace is derived from a heater for heating the polysilicon material to melt the solid polysilicon material into a silicon melt and to keep the silicon melt at a certain temperature, so that, for example, the heat of the heater is radiated or conducted to the single crystal silicon rod, and, since the single crystal silicon rod is pulled from the silicon melt, for example, the silicon melt also radiates heat to the single crystal silicon rod, and, for example, the pulled single crystal silicon rod is moved through a guide cylinder in the pulling furnace, so that the guide cylinder has a blocking effect on the heat radiated to the single crystal silicon rod. Therefore, it is an urgent problem to provide an efficient thermal field control device that can precisely control the axial temperature gradient G of the single crystal silicon rod, thereby preventing growth defects in the single crystal silicon rod.
Disclosure of Invention
In order to solve the technical problems, embodiments of the present invention are directed to a thermal field control device for a crystal pulling furnace and a crystal pulling furnace, which can achieve precise control of an axial temperature gradient of a single crystal silicon rod in a simple and effective manner, thereby achieving defect-free growth of single crystal silicon.
The technical scheme of the invention is realized as follows:
in a first aspect, an embodiment of the present invention provides a thermal field control device for a crystal pulling furnace, the thermal field control device including:
the guide cylinder of the crystal pulling furnace is fixedly arranged in the crystal pulling furnace;
a heat insulator disposed between a silicon melt and a single crystal silicon rod pulled from the silicon melt to constitute a heat shield for blocking heat radiated from the silicon melt to the single crystal silicon rod together with the guide cylinder, wherein the heat insulator is made of a material suitable for mechanical transmission;
a heat shield driver for driving the heat shield to move to vary the spacing between the bottom of the heat shield and the liquid level of the silicon melt and correspondingly vary the amount of heat radiated from the silicon melt to the single crystal silicon rod to achieve a desired axial temperature gradient in the single crystal silicon rod.
In a second aspect, embodiments of the present invention provide a crystal pulling furnace comprising a thermal field control apparatus according to the first aspect.
Embodiments of the present invention provide a thermal field control device for a crystal pulling furnace and a crystal pulling furnace, in which a heat shield is disposed between a silicon melt and a silicon single crystal rod, and the thermal field around the silicon single crystal rod is controlled in a simple and efficient manner by changing the distance between the bottom of the heat shield and the liquid level of the silicon melt, or equivalently, by moving the heat shield to change the amount of heat radiated from the silicon melt to the silicon single crystal rod, thereby satisfying the requirement of the axial temperature gradient of the silicon single crystal rod, and in which a guide cylinder of the crystal pulling furnace is fixedly disposed, thus avoiding the change of the distance by moving the guide cylinder made of a brittle graphite material and thus not suitable for mechanical transmission or otherwise susceptible to breakage.
Drawings
FIG. 1 shows a schematic view of a thermal field control apparatus according to an embodiment of the invention in a crystal pulling furnace;
FIG. 2 is a schematic view, partially in section, of an insulation barrier according to an embodiment of the invention;
FIG. 3 is a schematic, partially cross-sectional view of a draft tube according to an embodiment of the present invention;
FIG. 4 is a schematic view of a crystal pulling furnace according to an embodiment of the invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
Referring to fig. 1, an embodiment of the present invention provides a thermal field control device 10 for a crystal pulling furnace 1, wherein for the crystal pulling furnace 1 only a crucible 20 and a guide shell 11 thereof are shown in fig. 1, while for other components of the crystal pulling furnace 1 such as a furnace body, a heater, etc., which are known to those skilled in the art and therefore not shown in fig. 1, the thermal field control device 10 may comprise:
a guide cylinder 11 of the crystal pulling furnace 1, the guide cylinder 11 being fixedly disposed in the crystal pulling furnace 1, as known to those skilled in the art, the guide cylinder 11 functions to guide a protective gas such as argon gas to the liquid level L of the silicon melt SM shown in fig. 1, for example, to prevent unnecessary chemical reaction of the silicon melt SM, and during the pulling of the single crystal silicon rod R, the single crystal silicon rod R moves through the guide cylinder 11 and the guide cylinder 11 may function to shield heat radiated from the outside thereof to the single crystal silicon rod R, and further, the guide cylinder 11 is made of a brittle graphite material and is thus not suitable for use as a mechanically driven part, since it is easily broken to cause damage in case of being frequently driven;
a heat insulator 12 disposed between the silicon melt SM and the silicon single crystal rod R drawn from the silicon melt SM to constitute a heat shield 10A for blocking heat radiated from the silicon melt SM to the silicon single crystal rod R together with the guide cylinder 11, for example, in fig. 1, a heat radiation path schematically shown by a dotted arrow is blocked by the heat shield 10A so that heat cannot be radiated to the silicon single crystal rod R, and a heat radiation path schematically shown by a solid arrow below the dotted arrow is not blocked so that heat from the silicon melt SM is radiated to the silicon single crystal rod R, wherein a material of the heat insulator 12 is different from a material of the guide cylinder 11, and the heat insulator 12 is made of a material suitable for mechanical transmission;
a heat shield driver 13 for driving the heat shield 12 to move to vary the distance D1 between the bottom of the heat shield 10A and the liquid level L of the silicon melt SM and correspondingly vary the amount of heat radiated from the silicon melt SM to the single crystal silicon rod R to obtain a desired axial temperature gradient in the single crystal silicon rod R, to which it can be readily understood with reference to fig. 1 that when the heat shield driver 13 drives the heat shield 12 to move upwardly, the distance D1 increases, and thus more heat is radiated from the silicon melt SM to the single crystal silicon rod R, and when the heat shield driver 13 drives the heat shield 12 to move downwardly, the distance D1 decreases, and thus less heat is radiated from the silicon melt SM to the single crystal silicon rod R.
According to the solution of the above embodiment of the present invention, the heat shield 10A is disposed between the silicon melt SM and the silicon single crystal rod R, and the amount of heat radiated from the silicon melt SM to the silicon single crystal rod R is changed by changing the distance D1 between the bottom of the heat shield 10A and the liquid level L of the silicon melt SM, or equivalently, by moving the heat shield 10A, so that the control of the thermal field around the silicon single crystal rod R is achieved in a simple and effective manner, thereby satisfying the requirement of the axial temperature gradient of the silicon single crystal rod R, and the guide cylinder of the crystal pulling furnace 1 is fixedly disposed, so that the change of the distance D1 by the movement of the guide cylinder 11 made of a brittle graphite material and thus not suitable for mechanical transmission or otherwise prone to break is avoided.
As mentioned above, the heat insulating element 12 is made of a material suitable for mechanical transmission, for which, in a preferred embodiment of the invention, the heat insulating element 12 can be made of stainless steel, which is a tough material that is inexpensive and therefore different from graphite or suitable for mechanical transmission without breaking even in the case of frequent driving, but on the other hand, the presence of steel in the crystal pulling furnace 1 can lead to the introduction of metal contamination, which affects the crystal pulling process or can degrade the quality of the pulled monocrystalline silicon rod R, for which the surface area of the heat insulating element 12 can be smaller than the surface area of the guide shell 11, which reduces the possibility of metal contamination compared to the above-mentioned variation of the distance D1 with the guide shell 11, which is likewise made of steel, as a moving part.
In the case of materials suitable for mechanical transmission, such as the steels mentioned above, which tend to introduce undesirable contamination in the crystal pulling furnace 1 because of their presence in the crystal pulling furnace 1, in a preferred embodiment of the invention, with reference to fig. 2, the thermal insulation 12 may comprise a body 120 and a coating 121 covering the body 120, the coating 121 being intended to prevent the escape of contaminating impurities of the body 120. In this way, while ensuring that the insulation 12 is suitable for mechanical transmission, the introduction of contamination due to its material is avoided.
In a preferred embodiment of the invention, said thermal insulation 12 can be made of molybdenum, which, as known to those skilled in the art, is a conventional material present in the crystal pulling furnace 1, not only does not introduce contamination but also has a high thermal radiation reflectivity, enabling a more effective thermal insulation from the silicon melt SM to be achieved.
In a preferred embodiment of the present invention, referring back to fig. 1, the heat insulator 12 may be cylindrical like the guide shell 11, thereby more efficiently achieving heat insulation against the single crystal silicon rod R, and the inner circumferential wall 12W of the heat insulator 12 extends vertically. As previously mentioned, guide cylinder 11 functions to direct a protective gas, for example argon, at level L of silicon melt SM shown in fig. 1, in order to prevent, for example, unnecessary chemical reactions of silicon melt SM, therefore, the guide cylinder 11 needs to have a specific shape in order to form a passage for effectively guiding the protective gas, and particularly, as shown in fig. 1, the inner circumferential wall 11W of the guide cylinder 11 has a portion tapered from top to bottom, thereby being easily subjected to a large impact force of the protective gas guided to flow, under the condition that the guide cylinder 11 is driven to move, the guide cylinder can shake due to the action of the impact force of the airflow, so that the connection part of the guide cylinder and the driving device is further forced to be broken under stress, and even when the shaking amplitude is large, the guide cylinder can collide with the silicon single crystal rod R, and the silicon single crystal rod R or the guide cylinder 11 can fall off. The heat insulator 12 does not need to play a role of guiding the gas flow, and therefore, the inner peripheral wall 12W thereof can be extended vertically as described above, thereby avoiding the impact force of the flowing protective gas, and the heat insulator 12 is not shaken even if it is driven to move, and the stability of the parts is improved and the production safety is ensured compared to the case where the guide cylinder 11 having the passage for guiding the protective gas is used as a moving member to realize the change of the distance D1.
To further avoid the thermal insulation 12 from shaking, in a preferred embodiment of the present invention, still referring to fig. 1, the height of the thermal insulation 12 may be less than the height of the draft tube 11. In this way, when the protective gas flows, the "windward side" of the heat insulator 12 is further reduced, and therefore the force of the flowing protective gas received by the heat insulator 12 is further reduced, and the occurrence of rattling can be further avoided.
Preferably, in the case where the diameter of the silicon single crystal rod R is 300mm to 308mm, referring to fig. 1, the distance D2 between the inner circumferential wall 12W of the heat shield 12 and the outer circumferential wall of the silicon single crystal rod R may be between 20mm to 50 mm.
Preferably, in the above case, still referring to fig. 1, the distance D3 between the bottom of the guide shell 11 and the liquid level of the silicon melt may be between 20mm and 60mm, it being understood that this distance D3 determines the maximum value of the distance D1 between the bottom of the thermal shield 10A and the liquid level L of the silicon melt SM, while the minimum value of this distance D1 is determined by the movement of the thermal shield 12 and may be 10 mm. With the guide shell 11 fixed, changing this distance D3 changes the distance D1 between the bottom of the heat shield 10A and the liquid level L of the silicon melt SM.
In order to achieve the heat insulation effect of the guide shell 11, in a preferred embodiment of the present invention, referring to fig. 3, the guide shell 11 may include a housing 110 and a thermal insulation material 111 disposed inside the housing. The housing 110 may be made of high purity graphite and may be coated with a silicon carbide coating on the outer surface, and the insulation material 111 may be insulation graphite felt.
Referring to fig. 4, the embodiment of the invention also provides a crystal pulling furnace 1, and the crystal pulling furnace 1 can comprise a thermal field control device 10 according to the previous embodiments of the invention.
As can be easily understood by referring to fig. 4, as silicon single crystal rod R continues to grow, the volume of silicon melt SM in crucible 20 gradually decreases, on one hand, the drop in liquid level L causes the distance D1 to increase, thereby changing the amount of heat radiated from silicon melt SM to silicon single crystal rod R, on the other hand, because there is less silicon melt SM, the amount of heat that silicon melt SM itself can radiate decreases, and also causes the amount of heat radiated from silicon melt SM to silicon single crystal rod R to change, the combined effect of which causes the axial temperature gradient of silicon single crystal rod R to change, thereby causing crystal growth defects. In the prior art, the distance between the bottom of the guide cylinder and the liquid level of the silicon melt is monitored, and the axial temperature gradient required for the single crystal silicon rod is obtained through the following steps: for the corresponding monitoring, a quartz lifting hook is hung at the bottom of the guide cylinder, a camera is used for capturing the reflection of the quartz lifting hook on the liquid level, the distance between the quartz lifting hook and the reflection is measured, and for the control, the crucible is lifted so as to ensure that the distance between the bottom of the guide cylinder and the liquid level of the silicon melt meets the requirement of defect-free growth of the silicon single crystal rod. However, due to high-temperature radiation, liquid level fluctuation and the like, the reflection of the quartz lifting hook captured by the camera on the liquid level is very unstable, the monitoring accuracy is greatly influenced, the accuracy of the control under the condition cannot meet the requirement, and the defect of crystal growth of the silicon single crystal rod is difficult to avoid. Moreover, the adjustment of the distance between the bottom of the guide cylinder and the liquid level of the silicon melt is in consideration of the coordination relationship between the crucible rising and the pulling speed of the silicon single crystal rod, otherwise, the silicon single crystal rod is easy to melt back or break, so that the adjustment capability of the above manner is limited, particularly in the silicon single crystal rod subjected to nitrogen doping treatment for ensuring the BMD density at present, along with the increase of the nitrogen concentration, the Δ G of the silicon single crystal rod is gradually increased, so that the defect-free pulling speed area of the silicon single crystal rod is reduced, and the adjustment of the distance between the bottom of the guide cylinder and the liquid level of the silicon melt in the actual production process is insufficient for improving the defect distribution in the silicon single crystal rod, so that the silicon rod has crystal growth defects.
In this regard, referring to fig. 4, in a preferred embodiment of the present invention, the crystal pulling furnace 1 may further include:
a crucible 20 for containing the silicon melt SM;
a crucible driver 30 for driving the crucible 20 to move, as schematically shown by an open arrow in FIG. 4, to keep the height of the liquid level L of the silicon melt SM constant during the process in which the amount of silicon melt SM contained in the crucible 20 is continuously reduced during the pulling of the single crystal silicon rod R,
wherein, the thermal field control device 10 may further include:
a measuring unit 14, the measuring unit 14 being used for measuring a moving distance of the heat insulating member 12;
a determination unit 15, the determination unit 15 being configured to determine a distance D1 between the bottom of the heat shield 10A and the liquid level L of the silicon melt SM solely from the movement distance.
In the above embodiment, instead of using the quartz hook and its reflection as in the prior art, the distance D1 is accurately obtained simply by measuring the moving distance of the thermal insulator 12, and the control accuracy can be ensured in the case where the measurement accuracy can be ensured, and therefore the generation of crystal growth defects can be avoided. Moreover, the adjustment mode of moving the heat insulation piece 12 can realize a larger adjustment range of the axial temperature gradient of the single crystal silicon rod S, can effectively control the crystal growth defect, and is beneficial to the growth of the single crystal silicon rod in a mode without the growth defect.
It should be noted that: the technical schemes described in the embodiments of the present invention can be combined arbitrarily without conflict.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (10)
1. A thermal field control device for a crystal pulling furnace, the thermal field control device comprising:
the guide cylinder of the crystal pulling furnace is fixedly arranged in the crystal pulling furnace;
a heat insulator disposed between a silicon melt and a single crystal silicon rod pulled from the silicon melt to constitute a heat shield for blocking heat radiated from the silicon melt to the single crystal silicon rod together with the guide cylinder, wherein the heat insulator is made of a material suitable for mechanical transmission;
a heat shield driver for driving the heat shield to move to vary the spacing between the bottom of the heat shield and the liquid level of the silicon melt and correspondingly vary the amount of heat radiated from the silicon melt to the single crystal silicon rod to achieve a desired axial temperature gradient in the single crystal silicon rod.
2. A thermal field control apparatus according to claim 1, wherein the thermal insulation member is made of stainless steel and has a surface area smaller than that of the draft tube.
3. A thermal field control apparatus according to claim 1, wherein the thermal shield comprises a body and a coating covering the body, the coating being for preventing contaminating impurities of the body from escaping.
4. A thermal field control apparatus according to any one of claims 1 to 3, wherein the thermal insulator is cylindrical and an inner peripheral wall of the thermal insulator extends vertically.
5. The thermal field control device of claim 4, wherein the height of the thermal shield is less than the height of the draft tube.
6. The thermal field control device according to claim 5, wherein the diameter of the single crystal silicon rod is 300mm to 308mm, and the distance between the inner peripheral wall and the outer peripheral wall of the single crystal silicon rod is 20mm to 50 mm.
7. The thermal field control device of claim 6, wherein a distance between a bottom of the draft tube and a liquid level of the silicon melt is between 20mm and 60 mm.
8. The thermal field control device of claim 1, wherein the draft tube comprises a housing and a thermal insulation material disposed inside the housing.
9. A crystal pulling furnace, characterized in that the crystal pulling furnace comprises a thermal field control device according to any one of claims 1 to 8.
10. A crystal puller as set forth in claim 9 further comprising:
a crucible for containing the silicon melt;
a crucible driver for driving the crucible to move to maintain a height of a liquid level of the silicon melt constant during a continuous decrease in an amount of the silicon melt contained in the crucible during the pulling of the single crystal silicon rod,
wherein the thermal field control device further comprises:
a measuring unit for measuring a moving distance of the heat insulating member;
a determination unit for determining a spacing between the bottom of the thermal shield and the liquid level of the silicon melt based only on the movement distance.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210616029.7A CN114752995A (en) | 2022-05-31 | 2022-05-31 | Thermal field control device for crystal pulling furnace and crystal pulling furnace |
| PCT/CN2022/122981 WO2023231259A1 (en) | 2022-05-31 | 2022-09-30 | Thermal field control device for crystal pulling furnace and crystal pulling furnace |
| TW111137852A TWI835330B (en) | 2022-05-31 | 2022-10-05 | A thermal field control device for crystal pulling furnace and crystal pulling furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202210616029.7A CN114752995A (en) | 2022-05-31 | 2022-05-31 | Thermal field control device for crystal pulling furnace and crystal pulling furnace |
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| CN114752995A true CN114752995A (en) | 2022-07-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202210616029.7A Pending CN114752995A (en) | 2022-05-31 | 2022-05-31 | Thermal field control device for crystal pulling furnace and crystal pulling furnace |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN114752995A (en) |
| TW (1) | TWI835330B (en) |
| WO (1) | WO2023231259A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115233296A (en) * | 2022-07-25 | 2022-10-25 | 北京麦竹吉科技有限公司 | Heater, crystal pulling furnace and method for eliminating self-gap defect of large-diameter monocrystalline silicon |
| CN116288661A (en) * | 2023-04-06 | 2023-06-23 | 曲靖阳光新能源股份有限公司 | Thermal field control system for crystal pulling furnace and crystal pulling furnace |
| WO2023231259A1 (en) * | 2022-05-31 | 2023-12-07 | 西安奕斯伟材料科技有限公司 | Thermal field control device for crystal pulling furnace and crystal pulling furnace |
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| CN111270301A (en) * | 2018-12-04 | 2020-06-12 | 上海新昇半导体科技有限公司 | Guide cylinder of crystal growth furnace and crystal growth furnace |
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| JP5167651B2 (en) * | 2007-02-08 | 2013-03-21 | 信越半導体株式会社 | Method for measuring distance between heat shield member lower end surface and raw material melt surface, and method for controlling the distance |
| KR101540232B1 (en) * | 2013-09-11 | 2015-07-29 | 주식회사 엘지실트론 | Ingot growing apparatus |
| KR101680217B1 (en) * | 2014-08-05 | 2016-11-28 | 주식회사 엘지실트론 | Silicone single crystal growing apparatus and siclicone single crystal growing method using the apparatus |
| JP6202119B2 (en) * | 2016-03-14 | 2017-09-27 | 株式会社Sumco | Method for producing silicon single crystal |
| CN112281210B (en) * | 2020-10-10 | 2022-05-17 | 徐州鑫晶半导体科技有限公司 | Crystal growth apparatus and crystal growth method |
| CN112877776A (en) * | 2021-01-08 | 2021-06-01 | 上海新昇半导体科技有限公司 | Crystal growth furnace |
| CN114250508A (en) * | 2021-12-02 | 2022-03-29 | 山东有研艾斯半导体材料有限公司 | Method for rapidly controlling diameter of czochralski silicon |
| CN114318500B (en) * | 2022-01-05 | 2023-08-22 | 西安奕斯伟材料科技股份有限公司 | Crystal pulling furnace and method for pulling monocrystalline silicon rod and monocrystalline silicon rod |
| CN114752995A (en) * | 2022-05-31 | 2022-07-15 | 西安奕斯伟材料科技有限公司 | Thermal field control device for crystal pulling furnace and crystal pulling furnace |
-
2022
- 2022-05-31 CN CN202210616029.7A patent/CN114752995A/en active Pending
- 2022-09-30 WO PCT/CN2022/122981 patent/WO2023231259A1/en unknown
- 2022-10-05 TW TW111137852A patent/TWI835330B/en active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111270301A (en) * | 2018-12-04 | 2020-06-12 | 上海新昇半导体科技有限公司 | Guide cylinder of crystal growth furnace and crystal growth furnace |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023231259A1 (en) * | 2022-05-31 | 2023-12-07 | 西安奕斯伟材料科技有限公司 | Thermal field control device for crystal pulling furnace and crystal pulling furnace |
| CN115233296A (en) * | 2022-07-25 | 2022-10-25 | 北京麦竹吉科技有限公司 | Heater, crystal pulling furnace and method for eliminating self-gap defect of large-diameter monocrystalline silicon |
| CN116288661A (en) * | 2023-04-06 | 2023-06-23 | 曲靖阳光新能源股份有限公司 | Thermal field control system for crystal pulling furnace and crystal pulling furnace |
| CN116288661B (en) * | 2023-04-06 | 2024-06-11 | 曲靖阳光新能源股份有限公司 | Thermal field control system for crystal pulling furnace and crystal pulling furnace |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI835330B (en) | 2024-03-11 |
| TW202302929A (en) | 2023-01-16 |
| WO2023231259A1 (en) | 2023-12-07 |
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Address after: Room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065 Applicant after: Xi'an Yisiwei Material Technology Co.,Ltd. Address before: 710100 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant before: Xi'an yisiwei Material Technology Co.,Ltd. |