CN114752089B - 一种用于介电材料或储能材料的聚合物基薄膜 - Google Patents
一种用于介电材料或储能材料的聚合物基薄膜 Download PDFInfo
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- 238000004146 energy storage Methods 0.000 title claims abstract description 20
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- 239000011232 storage material Substances 0.000 title claims abstract description 8
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- 239000003990 capacitor Substances 0.000 claims abstract description 27
- -1 polyethylene furandicarboxylic acid Polymers 0.000 claims abstract description 16
- 239000010409 thin film Substances 0.000 claims abstract description 13
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- 238000006116 polymerization reaction Methods 0.000 claims description 2
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- DNXDYHALMANNEJ-UHFFFAOYSA-N furan-2,3-dicarboxylic acid Chemical compound OC(=O)C=1C=COC=1C(O)=O DNXDYHALMANNEJ-UHFFFAOYSA-N 0.000 description 4
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- YHWCPXVTRSHPNY-UHFFFAOYSA-N butan-1-olate;titanium(4+) Chemical compound [Ti+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] YHWCPXVTRSHPNY-UHFFFAOYSA-N 0.000 description 2
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- DGJKAGRTYAPHJB-UHFFFAOYSA-N O=C1OCCOC(=O)C2=C1C=CO2 Chemical compound O=C1OCCOC(=O)C2=C1C=CO2 DGJKAGRTYAPHJB-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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Abstract
本发明涉及高分子领域及能源领域,公开一种用于介电材料或储能材料的聚合物基薄膜,所述薄膜的成分为聚呋喃二甲酸乙二醇酯(PEF),所述聚呋喃二甲酸乙二醇酯的结构如式(I)所示:
Description
技术领域
本发明属于电介质材料领域,具体涉及一种用于介电材料或储能材料的聚合物基薄膜。
背景技术
随着全球经济的快速发展和人口的增长,资源消耗不断增加,对能源的需求迫在眉睫。高介电高储能电介质材料在微电子技术、电气以及储能领域有着广泛的应用。而薄膜电容器能够存储较高功率的电能,并且能够在瞬间释放出大量的电能而备受青睐。其中,电介质材料可以成倍或者几倍地提高薄膜电容器的电容存储能力,因此受到广泛研究。在各种介电材料中,聚合物基介电材料因其优良的加工性能和轻质性而成为研究热点。
经过研究人员的不懈努力,目前已开发出一些聚合物基介电材料,如聚丙烯(PP)、聚偏二氟乙烯(PVDF)、聚酰亚胺等,其中双向拉伸聚丙烯(BOPP)是其中最成熟的一种。聚丙烯具有成本低、介电损耗极低(<0.0002)、击穿强度高(700MV/m)和优异的机械性能等优点,已被用作工业电容器的电介质薄膜。它的介电常数与电容器的电容成线性关系。然而,聚丙烯的相对介电常数(2.2)较低,阻碍了薄膜电容器的进一步发展。
此外,与聚丙烯一样,大多数可用作介电材料的聚合物都是石油基材料。然而,石油资源确实存在几个值得考虑的问题:一是在开采和使用过程中出现的环境问题;二是石油资源的过度消耗。
中国发明申请201910392077.0报道了呋喃二甲酸、乙二醇、环状二醇和改性二酸的四元共聚酯,专利称其完全能够满足薄膜电容器对薄膜材料的性能需求,但没有报道任何的介电性能和储能性能的数据。其报道的环状二醇和改性二酸往往会导致聚酯具有较差的介电性能和储能性能。同时非生物基环状二醇和改性二酸的引入也会降低原料的生物基含量。
在这样的环境下,高性能全生物基电介质材料的研发为研究者提供了一个值得探索的新方向。
发明内容
有鉴于此,本发明旨在解决目前介电和储能材料主要来源于石油的问题,提供了全生物基材料聚呋喃二甲酸乙二醇酯(PEF)在介电和能源方面的新应用。PEF可以应用在薄膜电容器领域。尤其是作为电介质材料应用在薄膜电容器领域进行能量存储。同时,PEF具有优异的介电性能和储能性能。
本发明一方面提供一种用于介电材料或储能材料的聚合物基薄膜,其特征在于,所述薄膜的成分为聚呋喃二甲酸乙二醇酯(PEF),所述聚呋喃二甲酸乙二醇酯的结构如式(I)所示:
优选地,所述介电材料为薄膜电介质电容器。
优选地,所述薄膜的厚度为0.1-300微米。
优选地,所述聚呋喃二甲酸乙二醇酯的聚合度X为200-300。
优选地,在23℃,所述薄膜的介电常数可以为4-7。
优选地,在23℃,所述薄膜的介电损耗可以为0.015-0.03。
优选地,在23℃,所述薄膜的击穿强度可以为200-400MV/m。
优选地,在23℃,所述薄膜的储能密度可以为2-6J/cm3。
优选地,在23℃,所述薄膜的充放电效率可以为70-99%。
本发明还提供一种薄膜电容器,以上述任一种聚合物基薄膜作为薄膜电容器的电介质薄膜。
做为薄膜电容器,PEF可以采用热压法、吹膜法、双向拉伸法、溶液流延法或者旋涂法进行来制备电容器薄膜。
PEF的制备方法如下所述:
将呋喃二甲酸(0.2mol)加入带有机械搅拌、氮气保护的三口烧瓶中,之后加入乙二醇(0.32mol)和催化剂钛酸四丁酯(60微升),在210度反应2小时,之后加热到250度,真空条件(10Pa)下反应4小时。
所述聚合物基薄膜采用热压法、吹膜法、双向拉伸法、溶液流延法或者旋涂法中的任何一种制备获得。
本发明提供的生物基介电材料、储能材料,聚呋喃二甲酸乙二醇酯(PEF),单体呋喃二甲酸与乙二醇都可来源于生物质资源,其具有高的拉伸强度,较高的熔点,同时,其含有极性的呋喃环结构,具有永久偶极矩,因此,介电常数高,是较为优异的介电材料。
PEF具有高的介电常数5.41和低的介电损耗0.019。应用在薄膜电容器领域,PEF在300MV/m具有高的放电能量密度和超高充放电效率96%,高于大部分聚合物。本发明为生物基材料在电介质领域和储能领域的应用提供了依据。
PEF的介电常数较高,介电损耗低;储能密度高,充放电效率高;击穿强度高。因此PEF可以用作电介质薄膜电容器;PEF还可以用作可印刷传感器,如热释电探测器、触摸传感器等;PEF还可以用作存储器,如智能标签、安全文件、商品商标的防伪保护和集成电子印刷系统等;PEF还可以用作电致动材料,如可穿戴的触觉设备;PEF可用作栅极电介质材料;PEF可用作能量转换器,如在生物医药领域,作为电能和机械能的转换器;PEF可应用在电工电子领域,如电缆附件。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白,下面结合具体实施例对本发明作进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。
实施例1
PEF的制备方法如下所述:
将呋喃二甲酸(0.2mol)加入带有机械搅拌、氮气保护的三口烧瓶中,之后加入乙二醇(0.32mol)和催化剂钛酸四丁酯(60微升),在210度反应2小时,之后加热到250度,真空条件(10Pa)下反应4小时。
将PEF在220℃熔融,之后热压成厚度200微米的薄膜。
在23℃,测试其1000Hz时的介电常数为5.4和介电损耗为0.019。
实施例2
PEF的制备方法同实施例1。
将PEF在220℃熔融,之后热压成厚度30微米的薄膜,在23℃,测试其1000Hz时的储能密度为2.4J/cm3和充放电效率为96%。
实施例3
PEF的制备方法同实施例1。
将PEF在220℃熔融,之后热压成厚度30微米的薄膜,在23℃,其击穿强度为330MV/m。
以上所述,仅是本申请的几个实施例,并非对本申请做任何形式的限制,虽然本申请以较佳实施例揭示如上,然而并非用以限制本申请,任何熟悉本专业的技术人员,在不脱离本申请技术方案的范围内,利用上述揭示的技术内容做出些许的变动或修饰均等同于等效实施案例,均属于技术方案范围内。
Claims (7)
1.一种薄膜电容器,其特征在于,所述薄膜电容器以用于介电材料或储能材料的聚合物基薄膜作为薄膜电容器的电介质薄膜;
所述聚合物基薄膜为电介质材料;
所述薄膜的成分为聚呋喃二甲酸乙二醇酯(PEF),所述聚呋喃二甲酸乙二醇酯的结构如式(I)所示:
(I);
在23℃,所述薄膜的介电常数为4-7;
在23℃,所述薄膜的介电损耗为0.015-0.03。
2.根据权利要求1所述的薄膜电容器,其特征在于,所述介电材料为薄膜电介质电容器。
3.根据权利要求1所述的薄膜电容器,其特征在于,所述薄膜的厚度为0.1-300微米。
4.根据权利要求1所述的薄膜电容器,其特征在于,所述聚呋喃二甲酸乙二醇酯的聚合度X为200-300。
5.如权利要求1所述的薄膜电容器,其特征在于,在23℃,所述薄膜的击穿强度为200-400 MV/m。
6.如权利要求1所述的薄膜电容器,其特征在于,在23℃,所述薄膜的储能密度为2-6J/cm3。
7.如权利要求1所述的薄膜电容器,其特征在于,在23℃,所述薄膜的充放电效率为70-99%。
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