CN114744485A - Double-waveguide semiconductor laser structure with Al component and preparation method thereof - Google Patents

Double-waveguide semiconductor laser structure with Al component and preparation method thereof Download PDF

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CN114744485A
CN114744485A CN202210267493.XA CN202210267493A CN114744485A CN 114744485 A CN114744485 A CN 114744485A CN 202210267493 A CN202210267493 A CN 202210267493A CN 114744485 A CN114744485 A CN 114744485A
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sccm
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CN114744485B (en
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董海亮
胡雪莹
许并社
梁建
贾志刚
贾伟
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Taiyuan University of Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2031—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs

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Abstract

The invention relates to the technical field of semiconductor optoelectronics; the invention provides a double waveguide semiconductor laser structure with Al component and a preparation method thereof, wherein the carrier loss of a single waveguide structure waveguide layer with forward gradual change of Al component is larger, the far field divergence angle of a reverse gradual change structure is small, the internal loss is serious, the threshold current of a 980 nm semiconductor laser is increased due to the loss and leakage of carriers, and the working voltage is increased, the invention provides a double waveguide semiconductor laser structure with Al component, the waveguide Al component in the waveguide layer is in forward gradual change, the outer waveguide Al component is in reverse gradual change, the forward gradual change inner waveguide structure improves the limiting capability of carriers in an active area, the reverse gradual change outer waveguide improves the limiting capability of carriers in the waveguide layer, the invention solves the problems of serious carrier leakage and optical loss, reduces non-radiative recombination and leakage current, therefore, the series resistance and the working voltage of the laser are reduced, and the output power and the electro-optic conversion efficiency of the laser are improved.

Description

Double-waveguide semiconductor laser structure with Al component and preparation method thereof
Technical Field
The invention relates to the technical field of semiconductor optoelectronics, in particular to a dual-waveguide semiconductor laser structure with an Al component and a preparation method thereof.
Background
The waveguide layer is an important component of a 980 nm semiconductor laser and plays a key role in the output characteristic of the laser. The waveguide structure design generally adopts a single waveguide structure with fixed Al components, but the structure has weak limiting capability on current carriers and light fields, so that the current carrier loss is increased, and the number of high-order modes is large. On the basis of fixing the single waveguide with the Al component, a single waveguide structure with gradually changed Al component is provided. The single waveguide structure with the Al component gradually changed in the forward direction improves the carrier limiting capability of the active region, but for the wide waveguide structure, the carrier loss of the waveguide layer is large. The single waveguide structure with the reverse gradient Al component has a very small light restriction factor, so that the far-field divergence angle is small. But the internal loss is serious, the carrier loss is large, and the output power and the efficiency are low.
The key scientific problem that the output of 980 nm semiconductor laser with high power and high electro-optic conversion efficiency is influenced is that the limiting capability of carriers is weak and the loss of carriers is large. The fixed Al component waveguide layer has high non-radiative recombination efficiency and serious carrier leakage problem; the waveguide structure adopting forward gradual change of a single Al component or single reverse gradual change of the Al component can improve the carrier limiting capacity of the part close to the active region and the part far away from the active region. However, for the waveguide with the Al component in the reverse gradient, the carrier concentration of the active region is easily over high, and the potential near the active region is seriously mismatched, so that the carrier is seriously leaked; for the structure with forward Al component gradual change, although the carrier limiting capability of the structure is superior to that of a reverse gradual change waveguide, the carrier concentration of an active region of the structure is still higher, and the carrier limiting capability is weaker. The loss and leakage of carriers cause the increase of the threshold current of the 980 nm semiconductor laser and the increase of the working voltage. They are the main factors that limit the performance of 980 nm semiconductor lasers. Therefore, designing the waveguide structure of the high-power semiconductor laser has important significance for enhancing the carrier limiting capability and improving the electrical performance of the semiconductor laser.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a dual-waveguide semiconductor laser structure with an Al component and a preparation method thereof, and the dual-waveguide semiconductor laser structure can reduce the interlayer carrier concentration of an active region, reduce the carrier loss of a waveguide layer, improve the carrier limiting capability and reduce the non-radiative recombination and leakage current, thereby reducing the series resistance and the working voltage and realizing the purposes of improving the output power and the electro-optical conversion efficiency.
In order to achieve the purpose, the invention provides the following technical scheme:
a dual-waveguide semiconductor laser structure with Al component forward gradual change inner waveguide and reverse linear gradual change outer waveguide structure comprises an n-GaAs substrate, an n-AlGaAs gradual change layer, and an n-Al gradual change layer sequentially arranged in the direction of epitaxial growthxGa1-xAs limiting layer and reverse Al component gradient n-AlxGa1-xAs outer waveguide layer and n-Al with gradually changed forward Al componentxGa1-xAs inner waveguide layer, InGaAs/GaAsP active region layer, and p-Al with forward Al component gradientxGa1-xAs inner waveguide layer and reverse Al component gradient p-AlxGa1-xAs outer waveguide layer, p-AlxGa1-xAn As confining layer, a p-AlGaAs graded layer and a GaAs contact layer, the substrate being grown on a crystal plane, an n-AlGaAs graded layer being grown on an n-GaAs substrate, n-AlxGa1-xAn As confining layer grown on the n-AlGaAs graded layer, n-AlxGa1-xThe As outer waveguide layer is arranged on n-AlxGa1-xn-Al grown on As confinement layerxGa1-xThe As inner waveguide layer is arranged on n-AlxGa1-xThe InGaAs/GaAsP active region layer is grown on the n-Al outer waveguide layerxGa1-xp-Al grown on As inner waveguide layerxGa1-xAn As inner waveguide layer is grown on the InGaAs/GaAsP active region layer, p-AlxGa1-xThe As outer waveguide layer is arranged on p-AlxGa1-xGrowth of p-Al on As inner waveguide layerxGa1-xAs confining layer in p-AlxGa1-xGrowing an As outer waveguide layer on the p-Al layerxGa1-xAn As confining layer and a GaAs contact layer are grown on the p-AlGaAs graded layer.
Further, the thickness of the n-GaAs substrate is 1000-3000 nm, and the doping concentration is 1 multiplied by 1019~3×1019 cm-1(ii) a The thickness of the GaAs contact layer is 100-300 nm, and the fixed doping is 1 multiplied by 1020~3×1020 cm-1。
Further, Al composition in the n-AlGaAs gradient layer is gradually changed, and the maximum Al composition of the n-AlGaAs gradient layer and n-Al are gradually changedxGa1-xThe values of Al component x in the As limiting layer are the same, and the minimum value is more than 0; the doping concentration in the n-AlGaAs gradient layer is gradually changed, the maximum value of the doping concentration is the same as that of the n-GaAs substrate, and the minimum value of the doping concentration is the same as that of the n-Al substratexGa1-xThe values of the As confinement layers are the same; the thickness of the n-AlGaAs gradient layer is 50-200 nm; p-AlxGa1-xAl component, doping concentration and thickness of As limiting layer and n-AlxGa1-xThe As confinement layers are the same.
Further, n-AlxGa1-xThe Al component x in the As limiting layer satisfies x is more than or equal to 0.2 and less than or equal to 0.4, and n-AlxGa1-xThe As limiting layer is constantly heavily doped by 5 multiplied by 1017~2×1018 cm-1n-Al with a thickness of 1000-2000 nmxGa1-xThe doping concentration and thickness of the As limiting layer are both larger than those of n-AlxGa1-xAn As outer waveguide layer.
Further, n-AlxGa1-xThe Al component x in the As outer waveguide layer satisfies x is more than or equal to 0.1 and less than or equal to 0.3, and n-AlxGa1-xThe thickness of the As outer waveguide layer is 1000-1300 nm, Al component in epitaxial growth direction is gradually increased, and n-AlxGa1-xThe Al component gradient of the As outer waveguide layer ranges from 0.1 to 0.25; n-AlxGa1-xX is more than 0 and less than 0.25 in As inner waveguide layer, n-AlxGa1-xThe thickness of the As inner waveguide layer is 300-550 nm, and the maximum value of the Al component x is less than n-AlxGa1-xMinimum value of Al component x in As outer waveguide layer, n-AlxGa1-xThe Al component gradient range of the As inner waveguide layer is 0-0.15; n-AlxGa1-xAs outer waveguide layer and n-AlxGa1-xThe doping concentration range of the As inner waveguide layer is 0-1 multiplied by 1018 cm-1，n-AlxGa1-xAs outer waveguide layer and n-AlxGa1-xThe doping concentration of the As inner waveguide layer is not higher than that of the n-AlGaAs limiting layer at most.
Furthermore, the number of the InGaAs quantum well layers of the InGaAs/GaAsP active region layer is 1-3, the thickness range of the GaAsP barrier layer and the InGaAs quantum well layers is 6-10 nm, and the thickness of the GaAsP barrier layer is larger than or equal to that of the InGaAs quantum well layers.
Further, p-AlxGa1-xX in As inner waveguide layer is more than 0 and less than 0.3, p-AlxGa1-xThe thickness of the As inner waveguide layer is 50-300 nm and is not more than n-AlxGa1-xThe thickness of As inner waveguide layer, Al component in epitaxial direction gradually increases, p-AlxGa1- xThe Al component gradient of the As inner waveguide layer is 0-0.15; p-AlxGa1-xX in As outer waveguide layer is more than 0 and less than 0.4, p-AlxGa1- xThe thickness of the As outer waveguide layer is 200-500 nm, the Al component in the epitaxial direction is gradually reduced, and the reverse Al component is gradually changed to p-AlxGa1-xThe Al component gradient range of the As outer waveguide layer 08 is 0-0.25; p-AlxGa1-xAs inner waveguide layer and p-AlxGa1-xThe doping concentration range of the As outer waveguide layer is 0-1 multiplied by 1018 cm-1。
Further, the Al composition in the p-AlGaAs gradient layer is gradually changed, and the maximum value of the Al composition of the p-AlGaAs gradient layer and the p-Al arexGa1-xThe minimum values of the Al components of the As outer waveguide layer are the same, and the minimum value of the Al components is more than 0; the doping concentration in the p-AlGaAs gradient layer is gradually changed, the maximum value of the doping concentration is the same as that of the GaAs contact layer, and the minimum value of the doping concentration is the same as that of the p-AlxGa1-xAs outer waveguide layer; the thickness of the p-AlGaAs graded layer is smaller than that of the n-AlGaAs graded layer.
A preparation method of the double-waveguide semiconductor laser structure with the Al component forward gradient inner waveguide and reverse linear gradient outer waveguide structure specifically comprises the following steps:
step 1, cleaning the surface of the n-GaAs substrate, and growing an n-AlGaAs gradient layer: introducing hydrogen into the reaction chamber for reactionThe chamber temperature is 700-740 ℃, the time lasts for 5-15 minutes, particle pollutants on the surface of the n-GaAs substrate are cleaned, and oxygen atoms on the surface are removed; the temperature of the reaction chamber is reduced to 650-680 ℃, the flow rate of trimethyl gallium is 90 sccm, the flow rate of arsine is 440 sccm, the gradual change flow rate of trimethyl aluminum is 0-125 sccm, the flow rate of silane is 50-100 sccm, the growth thickness is 50-200 nm, and the n-type doping concentration is 5 multiplied by 1017 ~3×1019 cm-3；
Step 2. growth of n-AlxGa1-xAs limiting layer: the temperature of the reaction chamber is kept constant, the flow rate of trimethyl gallium is 55 sccm, the flow rate of trimethyl aluminum is 70-125 sccm, the flow rate of arsine is 440 sccm, the flow rate of silane is 50-100 sccm, and the n-type doping concentration is 5 multiplied by 1017 cm-1~2×1018 cm-1；
Step 3.n-AlxGa1-xGrowing an As outer waveguide layer: the temperature of the reaction chamber is kept constant, the flow rate of trimethyl gallium is 90 sccm, the gradual change flow rate of trimethyl aluminum is 0-40 sccm, the flow rate of arsine is 600-1200 sccm, the flow rate of silane is 50-100 sccm, and the doping concentration is 0-1 × 1018 cm-1；
Step 4. n-AlxGa1-xGrowing an As inner waveguide layer: the temperature of the reaction chamber is kept constant, the flow rate of trimethyl gallium is 90 sccm, the gradual change flow rate of trimethyl aluminum is 0-40 sccm, the flow rate of arsine is 600-1200 sccm, the flow rate of silane is 50-100 sccm, and the doping concentration is 0-1 × 1018 cm-1；
And step 5, growing the InGaAs/GaAsP active region layer: GaAsP barrier layer: the temperature is unchanged, the flow rate of trimethyl gallium is 45 sccm, the flow rate of arsine is 800-1500 sccm, the flow rate of phosphane is 300-500 sccm, and the growth time is 36 seconds; InGaAs quantum well layer: raising the temperature to 680-700 ℃, wherein the flow rate of trimethyl gallium is 64 sccm, the flow rate of trimethyl indium is 240 sccm, the flow rate of arsine is 1000-2000 sccm, and the growth time is 18 seconds;
step 6, circularly growing for 2 periods on the basis of the step 5;
step 7.p-AlxGa1-xGrowing an As inner waveguide layer: reducing the temperature to 650-680 ℃, wherein the flow rate of trimethyl gallium is 97 sccm, the gradual change flow rate of trimethyl aluminum is 0-40 sccm, the flow rate of arsine is 1160 sccm, and the flow rate of carbon tetrabromide is 5-20 sccm;
step 8.p-AlxGa1-xGrowing an As outer waveguide layer: keeping the temperature unchanged, wherein the flow rate of trimethyl gallium is 97 sccm, the gradual change flow rate of trimethyl aluminum is 0-40 sccm, the flow rate of arsine is 1160 sccm, and the flow rate of carbon tetrabromide is 5-20 sccm;
step 9.p-AlxGa1-xGrowing an As limiting layer: the temperature is kept constant, the flow rate of trimethyl gallium is 75 sccm, the flow rate of trimethyl aluminum is 70-125 sccm, the flow rate of arsine is 1160 sccm, the flow rate of carbon tetrabromide is 5-20 sccm, and the p-type doping concentration is 5 multiplied by 1017 ~2×1018 cm-1；
Step 10.p-AlGaAs graded layer growth: reducing the temperature to 550-650 ℃, wherein the flow rate of trimethyl gallium is 90 sccm, the flow rate of arsine is 440 sccm, and the flow rate of carbon tetrabromide is 10-25 sccm;
step 11, GaAs contact layer growth: the temperature is unchanged, the flow rate of trimethyl gallium is 90 sccm, the flow rate of arsine is 440 sccm, the flow rate of carbon tetrabromide is 10-25 sccm, and the constant heavy doping is 1 multiplied by 1020~3×1020 cm-1。。
In conclusion, the invention has the following beneficial effects:
the invention provides a double-waveguide structure design with forward gradual change of an Al component of a waveguide in a waveguide layer and reverse gradual change of an Al component of an outer waveguide, wherein the forward gradual change inner waveguide structure improves the limiting capacity of carriers in an active region, meanwhile, the reverse gradual change outer waveguide improves the limiting capacity of the carriers of the waveguide layer, and the sudden change of energy bands of an interface of an inner waveguide interface, an interface of an outer waveguide interface and a limiting layer can inhibit the leakage of the carriers.
Drawings
FIG. 1 is a schematic diagram of a two-waveguide 980 nm semiconductor laser with linearly graded Al composition;
FIG. 2 is a schematic diagram of the refractive index distribution of a dual-waveguide 980 nm semiconductor laser structure with forward and reverse linear gradual change of Al components along the epitaxial direction;
FIG. 3 is a graph of optical loss for a conventional waveguide structure and a dual-waveguide 980 nm semiconductor laser with forward and reverse linear grading of Al components;
fig. 4 is a power curve of a conventional waveguide structure and a dual-waveguide 980 nm semiconductor laser with forward and reverse linear gradual changes of Al components.
In the figure, 1.n-GaAs substrate, 2.n-AlGaAs graded layer, 3.n-AlxGa1-xAs limiting layer, 4. reverse Al component gradient n-AlxGa1-xAs outer waveguide layer, 5. forward Al component gradient n-AlxGa1-xAn As inner waveguide layer, 6.InGaAs/GaAsP active region layer, 6-1.GaAsP barrier layer, 6-2.InGaAs quantum well layer, 7. forward Al component gradient p-AlxGa1-xAs inner waveguide layer, 8, reverse Al component gradient p-AlxGa1-xAs outer waveguide layer, 9.p-AlxGa1-xAn As confinement layer, 10.p-AlGaAs graded layer, 11.GaAs contact layer.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings.
It should be noted that, for convenience of description, the following directional descriptions are consistent with the drawings themselves, but do not limit the structure of the present invention.
As shown in fig. 1 to 4, the present invention discloses a dual waveguide semiconductor laser structure having an Al component forward tapered inner waveguide and a reverse linear tapered outer waveguide structure, which is characterized in that: the double-waveguide semiconductor laser structure comprises an n-GaAs substrate 1, an n-AlGaAs gradient layer 2 and n-Al which are sequentially arranged in the epitaxial growth directionxGa1-xAs limiting layer 3, reverse Al component gradient n-AlxGa1-xAs outer waveguide layer 4, and forward Al component gradient n-AlxGa1-xAn As inner waveguide layer 5, an InGaAs/GaAsP active region layer 6, and p-Al with forward Al component gradientxGa1-xAs inner waveguide layer 7 and reverse Al component gradient p-AlxGa1-xAs outer waveguide layer 8, p-AlxGa1-xAn As confinement layer 9, a p-AlGaAs graded layer 10, and a GaAs contact layer 11; a substrate 1 grown on a crystal plane, an n-AlGaAs graded layer 2 grown on an n-GaAs substrate 1, n-AlxGa1-xAn As confining layer 3 grown on the n-AlGaAs graded layer 2, n-AlxGa1-xAs outer waveguide layer 4 in n-AlxGa1-xn-Al grown on the As confining layer 3xGa1-xThe As inner waveguide layer 5 is in n-AlxGa1-xAn As outer waveguide layer 4 is grown on the InGaAs/GaAsP active region layer 6 on the n-AlxGa1-xp-Al grown on the As inner waveguide layer 5xGa1-xAn As inner waveguide layer 7 is grown on the InGaAs/GaAsP active region 6, p-AlxGa1-xAs outer waveguide layer 8 in p-AlxGa1-xp-Al grown on As inner waveguide layer 7xGa1-xAs confinement layer 9 in p-AlxGa1-xAn As outer waveguide layer 8 is grown on the p-Al layer with a p-AlGaAs graded layer 10xGa1-xAn As confinement layer 9 and a GaAs contact layer 11 are grown on the p-AlGaAs graded layer 10.
The n-GaAs substrate 1 has a thickness of 1000-3000 nm and a doping concentration of 1 × 1019~3×1019 cm-1(ii) a The GaAs contact layer 11 has a thickness of 100-300 nm and is fixedly doped by 1 × 1020~3×1020 cm-1。
The Al component in the n-AlGaAs gradient layer 2 is gradually changed, the maximum value of the Al component x of the n-AlGaAs gradient layer 2 and the n-AlxGa1-xThe Al component x in the As limiting layer 3 has the same value, and the minimum value of the Al component x in the n-AlGaAs gradient layer 2 is more than 0; the doping concentration in the n-AlGaAs gradient layer 2 is gradually changed, the maximum value of the doping concentration is the same as that of the n-GaAs substrate 1, and the minimum value is the same as that of n-AlxGa1-xThe values of the As confinement layers 3 are the same; the thickness of the n-AlGaAs graded layer 2 is 50-200 nm; p-AlxGa1-xAl component, doping concentration and thickness of As confinement layer 9 and n-AlxGa1-xThe As confinement layers 2 are identical.
n-AlxGa1-xThe Al component x in the As limiting layer 3 satisfies that x is more than or equal to 0.2 and less than or equal to 0.4, n-AlxGa1-xThe As confining layer 3 is constantly heavily doped 5X 1017~2×1018 cm-1n-Al with a thickness of 1000-2000 nmxGa1-xThe doping concentration and the thickness of the As limiting layer 3 are both larger than that of n-AlxGa1-xAn As outer waveguide layer 4.
n-AlxGa1-xThe Al component x in the As outer waveguide layer 4 satisfies x is more than or equal to 0.1 and less than or equal to 0.3, and n-AlxGa1-xThe thickness of the As outer waveguide layer 4 is 1000-1300 nm, Al components gradually increase in the epitaxial growth direction, the maximum value of x is not larger than the Al components in the n-AlGaAs limiting layer 3, and the minimum value of x needs to enable the refractive index of the layer not to be higher than that of the GaAsP barrier layer; n-AlxGa1-xThe Al component gradient of the As outer waveguide layer 4 ranges from 0.1 to 0.25; n-AlxGa1-xX in the As inner waveguide layer 5 is more than 0 and less than 0.25, so that excessive interface loss caused by excessive interface mutation is prevented, the series resistance and the working voltage are increased, and meanwhile, the As inner waveguide layer plays a role in limiting current carriers. n-AlxGa1-xThe thickness of the As inner waveguide layer 5 is 300-550 nm, and n-AlxGa1-xThe maximum value of the Al component x of the As inner waveguide layer 5 is less than n-AlxGa1-xThe minimum value of the Al component x in the As outer waveguide layer 4 needs to be such that the refractive index of the layer is not higher than that of the GaAsP barrier layer. n-AlxGa1-xThe Al composition gradient of the As inner waveguide layer 5 is in the range of 0-0.15, so that the increase of carrier loss caused by overhigh carrier concentration between layers is prevented, and n-Al and the like are reducedxGa1-xThe interface between the As outer waveguide layers 4 is abrupt. n-AlxGa1-xAs outer waveguide layer 4 and n-AlxGa1-xThe doping concentration range of the As inner waveguide layer 5 is 0-1 multiplied by 1018 cm-1And n-AlxGa1-xThe doping concentration of the As outer waveguide layer 4 is higher than that of n-AlxGa1-xDoping concentration of As inner waveguide layer 5, n-AlxGa1-xAs outer waveguide layer 4 and n-AlxGa1-xThe doping concentration of the As inner waveguide layer 5 is not higher than that of the n-AlGaAs confinement layer 3 at the highest.
The number of the InGaAs quantum well layers 6-2 of the InGaAs/GaAsP quantum well layer 6 is 1-3, the thickness of the GaAsP barrier layer 6-1 and the thickness of the InGaAs quantum well layer 6-2 are in a range of 6-10 nm, the thickness of the GaAsP barrier layer 6-1 is larger than or equal to the thickness of the InGaAs quantum well layer 6-2, and the composition of the InGaAs/GaAsP active region layer 6 is constant.
p-AlxGa1-xX in the As inner waveguide layer 7 satisfies 0 < x < 0.3, p-AlxGa1-xThe thickness of the As inner waveguide layer 7 is 50-300 nm,and has a thickness of not more than n-AlxGa1-xThe thickness of the As inner waveguide layer 5 and the Al component in the epitaxial direction gradually increase, namely the Al component gradually increases from the quantum well layer 6 to the outer waveguide layer 8, the minimum value of x needs to ensure that the refractive index of the layer is not higher than that of the GaAsP barrier layer, and the maximum value of x is less than 0.3. p-AlxGa1-xThe Al component gradient of the As inner waveguide layer 7 is 0-0.15.
p-AlxGa1-xX in the As outer waveguide layer 8 satisfies 0 < x < 0.4, p-AlxGa1-xThe thickness of the As outer waveguide layer 8 is 200-500 nm, Al components in the epitaxial direction gradually decrease, namely the Al components gradually decrease from the inner waveguide layer 7 to the limiting layer 9, and the maximum value of the Al component x is not more than p-AlxGa1-xAl composition in the As limiting layer 9, minimum value is not less than p-Al of forward Al composition gradientxGa1-xMinimum of the As inner waveguide layer 7. Reverse Al composition gradient p-AlxGa1-xThe Al component gradient range of the As outer waveguide layer 08 is 0-0.25; p-AlxGa1-xAs inner waveguide layer 7 and p-AlxGa1-xThe doping concentration range of the As outer waveguide layer 8 is 0-1 x 1018 cm-1，p-AlxGa1-xThe doping concentration of the As outer waveguide layer 8 is higher than that of p-AlxGa1-xThe doping concentration of the As inner waveguide layer 7.
The Al component in the p-AlGaAs graded layer 10 is graded gradually, and the maximum value of the Al component is equal to that of p-AlxGa1-xThe minimum value of the Al component of the As outer waveguide layer 8 is the same, and the minimum value of the Al component of the p-AlGaAs graded layer 10 is more than 0; the doping concentration in the p-AlGaAs gradient layer 10 is gradually changed, the maximum value of the doping concentration is the same as that of the GaAs contact layer 11, and the minimum value of the doping concentration is the same as that of the p-AlxGa1-xAs outer waveguide layer 8; the thickness of the p-AlGaAs graded layer 10 is smaller than that of the n-AlGaAs graded layer 2.
The dual-waveguide semiconductor laser structure of the invention selects AlGaAs as waveguide material, the inner waveguide layer is made of forward Al component gradient AlGaAs material, the outer waveguide layer is made of reverse Al component gradient AlGaAs material, and the refractive index distribution diagram is shown in figure 2. The structure is characterized in that under the condition that the structure of an active region is not changed, the carrier concentration of the active region is reduced, and the carrier limiting capacity is improved, so that the carrier loss and the optical loss in an epitaxial structure are reduced, as shown in fig. 3, the working voltage is further reduced, and the output power and the electro-optic conversion efficiency are improved, as shown in fig. 4.
The potential barrier height is regulated and controlled by setting AlGaAs inner waveguides with different Al components, so that the loss of current carriers is reduced; meanwhile, the Al component gradient of the AlGaAs outer waveguide layer cannot be too large, mainly because the carrier loss easily caused by too large band jump reduces the electro-optic conversion efficiency of the semiconductor laser, and the height of the AlGaAs outer waveguide layer cannot exceed n-AlxGa1-xAn As confinement layer 3.
The invention also discloses a preparation method of the double-waveguide semiconductor laser structure with the Al component forward gradient inner waveguide and reverse linear gradient outer waveguide structure, which comprises the following steps:
step 1, cleaning the surface of an n-GaAs substrate 1, and growing an n-AlGaAs gradient layer 2: introducing hydrogen into the reaction chamber, keeping the temperature of the reaction chamber at 700-740 ℃ for 5-15 minutes, cleaning particle pollutants on the surface of the n-GaAs substrate 1 and removing oxygen atoms on the surface; the temperature of the reaction chamber is reduced to 650-680 ℃, the flow rate of trimethyl gallium is 90 sccm, the flow rate of arsine is 440 sccm, the gradual change flow rate of trimethyl aluminum is 0-125 sccm, the flow rate of silane is 50-100 sccm, the growth thickness is 50-200 nm, and the n-type doping concentration is 5 multiplied by 1017 ~3×1019 cm-3(ii) a Namely, the AlGaAs graded layer 2 with the thickness of 50-200 nm is grown on the GaAs substrate 1, and the dislocation density and the interface lattice mismatch can be reduced by the step.
Step 2. growth of the n-AlxGa1-xAs limiting layer 3: the temperature of the reaction chamber is kept constant, the flow rate of trimethyl gallium is 55 sccm, the flow rate of trimethyl aluminum is 70-125 sccm, the flow rate of arsine is 440 sccm, the flow rate of silane is 50-100 sccm, and the n-type doping concentration is 5 multiplied by 1017 cm-1~2×1018 cm-1(ii) a Namely, n-Al with the thickness of 1000 to 2000 nm is grown on the AlGaAs graded layer 2xGa1-xAn As confinement layer 3, the function of which is to supply electrons and confine the optical field distribution.
Step 3.n-AlxGa1-xAnd (3) growing an As outer waveguide layer 4: the temperature of the reaction chamber is kept constant, and the flow rate of trimethyl gallium is kept constant90 sccm, a gradient flow of 0 to 40sccm for trimethylaluminum, a flow of 600 to 1200 sccm for arsine, a flow of 50 to 100sccm for silane, and a doping concentration of 0 to 1 × 1018 cm-1(ii) a In n-AlxGa1-xGrowing n-Al with the thickness of 1000-1300 nm on the As limiting layer 3xGa1-xAn As outer waveguide layer 4, which can provide a place for photon reflection propagation and further limit carrier leakage.
Step 4. n-AlxGa1-xThe As inner waveguide layer 5 grows: the temperature of the reaction chamber is kept constant, the flow rate of trimethyl gallium is 90 sccm, the gradual change flow rate of trimethyl aluminum is 0-40 sccm, the flow rate of arsine is 600-1200 sccm, the flow rate of silane is 50-100 sccm, and the doping concentration is 0-1 × 1018 cm-1(ii) a In n-AlxGa1-xGrowing n-Al with the thickness of 300-550 nm on the As outer waveguide layer 4xGa1-xThe As inner waveguide layer 5 has the functions of providing a photon reflection propagation field, regulating the barrier height and limiting the leakage of carriers.
And step 5, growing the InGaAs/GaAsP active layer 6: GaAsP barrier layer 6-1: the temperature is constant, the flow rate of trimethyl gallium is 45 sccm, the flow rate of arsine is 800-1500 sccm, the flow rate of phosphane is 300-500 sccm, the growth time is 36 seconds, and the growth time is in the range of n-AlxGa1-xAnd growing a GaAsP barrier layer 6-1 with the thickness of 6-10 nm on the As inner waveguide layer 5, wherein the step has the function of limiting electrons and holes in the quantum well. InGaAs quantum well layer 6-2: and (3) raising the temperature to 680-700 ℃, enabling the trimethyl gallium flow to be 64 sccm, enabling the trimethyl indium flow to be 240 sccm, enabling the arsine flow to be 1000-2000 sccm, enabling the growth time to be 18 seconds, and growing an InGaAs quantum well layer 6-2 with the thickness of 6-10 nm on the GaAsP barrier layer 6-1.
Step 6, cyclically growing for 2 periods on the basis of the step 5, wherein the GaAsP barrier layer 6-1 and the InGaAs quantum well layer 6-2 are distributed at intervals, in the embodiment, the InGaAs/GaAsP active layer 6 is formed from n-AlxGa1-xAs inner waveguide layer 5 to p-AlxGa1-xThe As inner waveguide layer 7 comprises a GaAsP barrier layer 6-1, an InGaAs quantum well layer 6-2, a GaAsP barrier layer 6-1, an InGaAs quantum well layer 6-2 and a GaAsP barrier layer 6-1 in sequence。
Step 7.p-AlxGa1-xGrowing the As inner waveguide layer 7: reducing the temperature to 650-680 ℃, wherein the flow rate of trimethyl gallium is 97 sccm, the gradual change flow rate of trimethyl aluminum is 0-40 sccm, the flow rate of arsine is 1160 sccm, and the flow rate of carbon tetrabromide is 5-20 sccm; growing p-Al with the thickness of 50-300 nm on the GaAsP barrier layer 6-1xGa1-xAs inner waveguide layer 7, p-AlxGa1-xThe doping concentration of the As inner waveguide layer is 0-1 x 1018 cm-1. The function of this step is to provide a field for photon reflection propagation, adjust the barrier height, and limit carrier leakage.
Step 8.p-AlxGa1-xThe As outer waveguide layer 8 is grown: keeping the temperature unchanged, wherein the flow rate of trimethyl gallium is 97 sccm, the gradual change flow rate of trimethyl aluminum is 0-40 sccm, the flow rate of arsine is 1160 sccm, and the flow rate of carbon tetrabromide is 5-20 sccm; p-AlxGa1-xp-Al with the thickness of 200-500 nm is grown on the As inner waveguide layer 7xGa1-xAs outer waveguide layer 8, p-AlxGa1-xThe doping concentration of the As outer waveguide layer 8 is 0-1 multiplied by 1018 cm-1. The role of this step is to provide a field for the reflected propagation of photons and to further limit carrier leakage.
Step 9.p-AlxGa1-xGrowth of As limiting layer 9: the temperature is kept constant, the flow rate of trimethyl gallium is 75 sccm, the flow rate of trimethyl aluminum is 70-125 sccm, the flow rate of arsine is 1160 sccm, the flow rate of carbon tetrabromide is 5-20 sccm, and p-Al is addedxGa1-xAs confinement layer 9 doping concentration 5X 1017 ~2×1018 cm-1；p-AlxGa1-xp-Al with the thickness of 1000-2000 nm is grown on the As outer waveguide layer 8xGa1-xAn As confinement layer 9. The step has the functions of providing holes, limiting optical field distribution and carrier leakage, limiting photons and carriers from leaking to an epitaxial structure outside a limiting layer and reducing carrier and photon loss.
Step 10.p-AlGaAs graded layer 10 growth: reducing the temperature to 550-650 ℃, wherein the flow rate of trimethyl gallium is 90 sccm, the flow rate of arsine is 440 sccm, and the flow rate of carbon tetrabromide is 10-25 sccm; p-AlxGa1-xThe thickness of the As limiting layer 9 is 50-100 nmAlGaAs graded layer 10 having a doping concentration of 5X 1017~3×1020cm-3. The effect of this step is to reduce the dislocation density.
Step 11, GaAs contact layer 11 growth: the temperature is unchanged, the flow rate of trimethyl gallium is 90 sccm, the flow rate of arsine is 440 sccm, the flow rate of carbon tetrabromide is 10-25 sccm, and the constant heavy doping is 1 multiplied by 1020~3×1020 cm-1(ii) a A GaAs contact layer 11 with a thickness of 50 to 200 nm is grown on the p-AlGaAs graded layer 10. The role of this step is to form an ohmic contact with the p-electrode.
FIG. 2 is a schematic view of the epitaxial direction refractive index distribution of a two-waveguide 980 nm semiconductor laser structure based on the linear forward and reverse gradualness of Al components shown in FIG. 1, in which electrons pass from an n-type electrode through n-AlxGa1-xAs confining layer 3 and n-AlxGa1-xAs waveguide layer is injected into the InGaAs/GaAsP active region layer 6, and holes are injected from the p-type electrode through the p-AlxGa1-xAs confinement layer and p-AlxGa1-xThe As waveguide layer is injected into the active region where the electron holes are stimulated to radiate to generate photons.
The above description is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above embodiments, and all technical solutions belonging to the idea of the present invention belong to the protection scope of the present invention. It should be noted that modifications and adaptations to those skilled in the art without departing from the principles of the present invention should also be considered as within the scope of the present invention.

Claims (9)

1. A double-waveguide semiconductor laser structure with an Al component forward gradient inner waveguide and a reverse linear gradient outer waveguide structure is characterized in that: the double-waveguide semiconductor laser structure comprises an n-GaAs substrate (1), an n-AlGaAs gradient layer (2) and n-Al, wherein the n-AlGaAs gradient layer and the n-Al are sequentially arranged in the epitaxial growth directionxGa1-xAn As limiting layer (3) and n-Al with reverse Al component gradientxGa1-xAn As outer waveguide layer (4) and n-Al with gradually changed forward Al componentxGa1-xAn As inner waveguide layer (5), an InGaAs/GaAsP active region layer (6)p-Al with gradually changed forward Al componentxGa1-xAs inner waveguide layer (7), reverse Al component gradient p-AlxGa1-xAs outer waveguide layer (8), p-AlxGa1-xAn As confinement layer (9), a p-AlGaAs graded layer (10) and a GaAs contact layer (11), the substrate (1) being grown on a crystal plane, an n-AlGaAs graded layer (2) being grown on an n-GaAs substrate (1), n-AlxGa1-xAn As confining layer (3) is grown on the n-AlGaAs graded layer (2), and n-Al is grown on the n-AlGaAs graded layerxGa1-xThe As outer waveguide layer (4) is arranged on n-AlxGa1-xn-Al grown on the As confinement layer (3)xGa1-xAn As inner waveguide layer (5) is arranged on n-AlxGa1-xAn As outer waveguide layer (4) is grown on the InGaAs/GaAsP active region layer (6) on the n-AlxGa1-xp-Al grown on As inner waveguide layer (5)xGa1-xAn As inner waveguide layer (7) is grown on the InGaAs/GaAsP active region layer (6), p-AlxGa1-xThe As outer waveguide layer (8) is on p-AlxGa1-xp-Al grown on As inner waveguide layer (7)xGa1-xAn As confining layer (9) in p-AlxGa1-xAn As outer waveguide layer (8) is grown on the p-Al gradient layer (10)xGa1-xAn As confinement layer (9) and a GaAs contact layer (11) are grown on the p-AlGaAs graded layer (10).
2. The dual waveguide semiconductor laser structure with an Al composition forward graded inner waveguide and a reverse linear graded outer waveguide structure as claimed in claim 1 wherein: the n-GaAs substrate (1) has a thickness of 1000-3000 nm and a doping concentration of 1 × 1019~3×1019 cm-1(ii) a The GaAs contact layer (11) has a thickness of 100-300 nm and is fixedly doped with 1 × 1020~3×1020 cm-1。
3. The dual waveguide semiconductor laser structure with an Al composition forward graded inner waveguide and a reverse linear graded outer waveguide structure as claimed in claim 1 wherein: the Al composition in the n-AlGaAs gradient layer (2) is gradually changed, n-AlGaAs gradient layer (2) maximum Al component and n-AlxGa1-xThe Al component x of the As limiting layer (3) has the same value, and the minimum value is more than 0; the doping concentration of the n-AlGaAs gradient layer (2) is gradually changed, the maximum value of the doping concentration is the same as that of the n-GaAs substrate (1), and the minimum value of the doping concentration is the same as that of n-AlxGa1-xThe As limiting layers (3) have the same value; the thickness of the n-AlGaAs gradient layer (2) is 50-200 nm;
the p-AlxGa1-xAl composition, doping concentration and thickness of As confinement layer (9) and n-AlxGa1-xThe As confinement layers (2) are the same.
4. The dual waveguide semiconductor laser structure with an Al composition forward graded inner waveguide and a reverse linear graded outer waveguide structure as claimed in claim 1 wherein: the n-AlxGa1-xThe Al component x in the As limiting layer (3) satisfies x is more than or equal to 0.2 and less than or equal to 0.4, and n-AlxGa1-xThe As confining layer (3) is constantly heavily doped 5X 1017~2×1018 cm-1n-Al with a thickness of 1000-2000 nmxGa1-xThe doping concentration and the thickness of the As limiting layer (3) are both larger than those of n-AlxGa1-xAn As outer waveguide layer (4).
5. The dual waveguide semiconductor laser structure with an Al composition forward graded inner waveguide and a reverse linear graded outer waveguide structure as claimed in claim 1 wherein: the n-AlxGa1-xThe Al component x in the As outer waveguide layer (4) satisfies x is more than or equal to 0.1 and less than or equal to 0.3, and n-AlxGa1-xThe thickness of the As outer waveguide layer (4) is 1000-1300 nm, the Al component in the epitaxial growth direction is gradually increased, and n-AlxGa1-xThe Al component gradient range of the As outer waveguide layer (4) is 0.1-0.25;
the n-AlxGa1-xX is more than 0 and less than 0.25 in the As inner waveguide layer (5), n-AlxGa1-xThe thickness of the As inner waveguide layer (5) is 300-550 nm, and the maximum value of the Al component x is less than n-AlxGa1-xMinimum value of Al component x in As outer waveguide layer (4), n-AlxGa1-xThe Al component gradient of the As inner waveguide layer (5) is in the range of 0-0.15;
the n-AlxGa1-xAn As outer waveguide layer (4) and n-AlxGa1-xThe doping concentration range of the As inner waveguide layer (5) is 0-1 x 1018cm-1，n-AlxGa1-xAn As outer waveguide layer (4) and n-AlxGa1-xThe doping concentration of the As inner waveguide layer (5) is not higher than that of the n-AlGaAs limiting layer (3).
6. The dual waveguide semiconductor laser structure with an Al composition forward graded inner waveguide and a reverse linear graded outer waveguide structure as claimed in claim 1 wherein: the number of the InGaAs quantum well layers (6-2) of the InGaAs/GaAsP active region layer (6) is 1-3, the thickness range of the GaAsP barrier layer (6-1) and the InGaAs quantum well layers (6-2) is 6-10 nm, and the thickness of the GaAsP barrier layer (6-1) is larger than or equal to that of the InGaAs quantum well layers (6-2).
7. The dual waveguide semiconductor laser structure with an Al composition forward graded inner waveguide and a reverse linear graded outer waveguide structure as claimed in claim 1 wherein: the p-AlxGa1-xX in the As inner waveguide layer (7) satisfies x is more than 0 and less than 0.3, p-AlxGa1-xThe thickness of the As inner waveguide layer (7) is 50-300 nm and is not more than n-AlxGa1-xThe thickness of the As inner waveguide layer (5) and the Al component in the epitaxial direction are gradually increased, p-AlxGa1-xThe Al component gradient of the As inner waveguide layer (7) is 0-0.15;
the p-AlxGa1-xX in the As outer waveguide layer (8) satisfies x is more than 0 and less than 0.4, p-AlxGa1-xThe thickness of the As outer waveguide layer (8) is 200-500 nm, the Al component in the epitaxial direction is gradually reduced, and the reverse Al component is gradually changed to p-AlxGa1-xThe Al component gradient range of the As outer waveguide layer 08 is 0-0.25;
the p-AlxGa1-xAn As inner waveguide layer (7) and p-AlxGa1-xDoping of As outer waveguide layer (8)The concentration of impurities is in the range of 0-1 × 1018cm-1。
8. The dual waveguide semiconductor laser structure with an Al composition forward graded inner waveguide and a reverse linear graded outer waveguide structure as claimed in claim 1 wherein: the Al component in the p-AlGaAs gradient layer (10) is gradually changed, and the maximum Al component of the p-AlGaAs gradient layer (10) and the p-AlxGa1-xThe minimum values of the Al components of the As outer waveguide layer (8) are the same, and the minimum value of the Al components is more than 0; the doping concentration of the p-AlGaAs gradient layer (10) is gradually changed, the maximum value of the doping concentration is the same as that of the GaAs contact layer (11), and the minimum value of the doping concentration is the same as that of the p-AlxGa1-xAs outer waveguide layer (8); the thickness of the p-AlGaAs graded layer (10) is smaller than that of the n-AlGaAs graded layer (2).
9. A method for manufacturing a dual waveguide semiconductor laser structure having a forward graded inner waveguide and a reverse linear graded outer waveguide structure of Al composition as claimed in claims 1 to 8, characterized in that: the method specifically comprises the following steps:
step 1, cleaning the surface of an n-GaAs substrate (1), and growing an n-AlGaAs gradient layer (2): introducing hydrogen into the reaction chamber, keeping the temperature of the reaction chamber at 700-740 ℃ for 5-15 minutes, cleaning particle pollutants on the surface of the n-GaAs substrate (1) and removing oxygen atoms on the surface; the temperature of the reaction chamber is reduced to 650-680 ℃, the flow rate of trimethyl gallium is 90 sccm, the flow rate of arsine is 440 sccm, the gradual change flow rate of trimethyl aluminum is 0-125 sccm, the flow rate of silane is 50-100 sccm, the growth thickness is 50-200 nm, and the n-type doping concentration is 5 multiplied by 1017 ~3×1019 cm-3；
Step 2. growth of n-AlxGa1-xAs limiting layer (3): the temperature of the reaction chamber is kept constant, the flow rate of trimethyl gallium is 55 sccm, the flow rate of trimethyl aluminum is 70-125 sccm, the flow rate of arsine is 440 sccm, the flow rate of silane is 50-100 sccm, and the n-type doping concentration is 5 multiplied by 1017 cm-1~2×1018 cm-1；
Step 3.n-AlxGa1-xGrowing the As outer waveguide layer (4): reaction ofThe chamber temperature is kept constant, the flow rate of trimethyl gallium is 90 sccm, the gradual change flow rate of trimethyl aluminum is 0-40 sccm, the flow rate of arsine is 600-1200 sccm, the flow rate of silane is 50-100 sccm, and the doping concentration is 0-1 × 1018 cm-1；
Step 4. n-AlxGa1-xGrowing an As inner waveguide layer (5): the temperature of the reaction chamber is kept constant, the flow rate of trimethyl gallium is 90 sccm, the gradual change flow rate of trimethyl aluminum is 0-40 sccm, the flow rate of arsine is 600-1200 sccm, the flow rate of silane is 50-100 sccm, and the doping concentration is 0-1 × 1018 cm-1；
And step 5, growing the InGaAs/GaAsP active region layer (6): GaAsP barrier layer (6-1): the temperature is unchanged, the flow rate of trimethyl gallium is 45 sccm, the flow rate of arsine is 800-1500 sccm, the flow rate of phosphane is 300-500 sccm, and the growth time is 36 seconds; InGaAs quantum well layer (6-2): raising the temperature to 680-700 ℃, wherein the flow rate of trimethyl gallium is 64 sccm, the flow rate of trimethyl indium is 240 sccm, the flow rate of arsine is 1000-2000 sccm, and the growth time is 18 seconds;
step 6, circularly growing for 2 periods on the basis of the step 5;
step 7.p-AlxGa1-xGrowing an As inner waveguide layer (7): reducing the temperature to 650-680 ℃, wherein the flow rate of trimethyl gallium is 97 sccm, the gradual change flow rate of trimethyl aluminum is 0-40 sccm, the flow rate of arsine is 1160 sccm, and the flow rate of carbon tetrabromide is 5-20 sccm;
step 8.p-AlxGa1-xGrowing an As outer waveguide layer (8): keeping the temperature unchanged, wherein the flow rate of trimethyl gallium is 97 sccm, the gradual change flow rate of trimethyl aluminum is 0-40 sccm, the flow rate of arsine is 1160 sccm, and the flow rate of carbon tetrabromide is 5-20 sccm;
step 9.p-AlxGa1-xGrowing an As limiting layer (9): the temperature is kept constant, the flow rate of trimethyl gallium is 75 sccm, the flow rate of trimethyl aluminum is 70-125 sccm, the flow rate of arsine is 1160 sccm, the flow rate of carbon tetrabromide is 5-20 sccm, and the p-type doping concentration is 5 multiplied by 1017 ~2×1018 cm-1；
Step 10.p-AlGaAs graded layer (10) growth: reducing the temperature to 550-650 ℃, wherein the flow rate of trimethyl gallium is 90 sccm, the flow rate of arsine is 440 sccm, and the flow rate of carbon tetrabromide is 10-25 sccm;
step 11, GaAs contact layer (11) growth: the temperature is unchanged, the flow rate of trimethyl gallium is 90 sccm, the flow rate of arsine is 440 sccm, the flow rate of carbon tetrabromide is 10-25 sccm, and the constant heavy doping is 1 multiplied by 1020~3×1020 cm-1。
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