CN114740065B - MEMS residual chlorine electrode for detecting tap water - Google Patents
MEMS residual chlorine electrode for detecting tap water Download PDFInfo
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- CN114740065B CN114740065B CN202210259067.1A CN202210259067A CN114740065B CN 114740065 B CN114740065 B CN 114740065B CN 202210259067 A CN202210259067 A CN 202210259067A CN 114740065 B CN114740065 B CN 114740065B
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- electrode
- measuring
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- layer
- residual chlorine
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- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 229910052801 chlorine Inorganic materials 0.000 title claims abstract description 27
- 239000000460 chlorine Substances 0.000 title claims abstract description 27
- 239000008399 tap water Substances 0.000 title claims abstract description 16
- 235000020679 tap water Nutrition 0.000 title claims abstract description 16
- 229910052737 gold Inorganic materials 0.000 claims abstract description 36
- 239000010931 gold Substances 0.000 claims abstract description 36
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 27
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- 238000004806 packaging method and process Methods 0.000 claims abstract description 13
- 238000005259 measurement Methods 0.000 claims abstract description 10
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 9
- 239000012528 membrane Substances 0.000 claims abstract description 7
- XIUFWXXRTPHHDQ-UHFFFAOYSA-N prop-1-ene;1,1,2,2-tetrafluoroethene Chemical group CC=C.FC(F)=C(F)F XIUFWXXRTPHHDQ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229920006335 epoxy glue Polymers 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910021607 Silver chloride Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 claims description 4
- 238000001514 detection method Methods 0.000 abstract description 17
- 230000010354 integration Effects 0.000 abstract description 5
- 230000010287 polarization Effects 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 description 7
- 239000000243 solution Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000012086 standard solution Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- -1 polyperfluoroethylene propylene Polymers 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/28—Electrolytic cell components
- G01N27/30—Electrodes, e.g. test electrodes; Half-cells
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/28—Electrolytic cell components
- G01N27/30—Electrodes, e.g. test electrodes; Half-cells
- G01N27/301—Reference electrodes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/406—Cells and probes with solid electrolytes
- G01N27/407—Cells and probes with solid electrolytes for investigating or analysing gases
- G01N27/4073—Composition or fabrication of the solid electrolyte
- G01N27/4074—Composition or fabrication of the solid electrolyte for detection of gases other than oxygen
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/406—Cells and probes with solid electrolytes
- G01N27/407—Cells and probes with solid electrolytes for investigating or analysing gases
- G01N27/4077—Means for protecting the electrolyte or the electrodes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/406—Cells and probes with solid electrolytes
- G01N27/407—Cells and probes with solid electrolytes for investigating or analysing gases
- G01N27/4078—Means for sealing the sensor element in a housing
Abstract
The invention provides an MEMS residual chlorine electrode for detecting tap water, which aims to solve the problem of lower integration level of a counter electrode, a measuring electrode and a reference electrode of a residual chlorine detection sensor in the prior art. The MEMS residual chlorine electrode comprises a wafer, a counter electrode, a measuring electrode, a reference electrode and a silicon cover plate packaging layer; the wafer is provided with a counter electrode, a measuring electrode and a reference electrode, and three gold conductive wires are etched on the wafer; the silicon cover plate packaging layer is arranged on the wafer; the measuring electrode is covered with a perfluoroethylene propylene membrane, and the reference electrode is covered with an ion conducting layer; the counter electrode and the measuring electrode each include a gold layer and a platinum layer. The counter electrode, the measuring electrode and the reference electrode are integrated on the same wafer substrate, so that the integration degree is high, the volume is small, and the counter electrode, the measuring electrode and the reference electrode are convenient to install when the circuit board is manufactured; the measurement electrode is covered with the perfluoroethylene propylene membrane, so that the stability of detection data can be improved, the drift of the detection data can be reduced, and the electrode polarization can be prevented.
Description
Technical Field
The invention belongs to the technical field of domestic water residual chlorine detection, and particularly relates to an MEMS residual chlorine electrode for detecting tap water.
Background
MEMS sensors refer to microelectromechanical systems; residual chlorine of the tap water for life can be detected by adopting the residual chlorine detection sensor, so that whether the tap water for life meets the standard can be judged; the existing residual chlorine detection sensor comprises a counter electrode, a measuring electrode and a reference electrode, but the three detection electrodes in the existing residual chlorine detection sensor are separately provided with the problem of low integration level, so that the residual chlorine detection sensor is large in volume; in addition, the measurement data of the existing residual chlorine detection sensor has the problems of poor stability and easiness in drifting.
Disclosure of Invention
The invention provides an MEMS residual chlorine electrode for detecting tap water, which aims to solve the problem of lower integration level of a counter electrode, a measuring electrode and a reference electrode of a residual chlorine detection sensor in the prior art.
In order to solve the technical problems, the invention adopts the following technical scheme: the MEMS residual chlorine electrode for detecting tap water comprises a wafer, a counter electrode, a measuring electrode, a reference electrode and a silicon cover plate packaging layer; the wafer is provided with a counter electrode, a measuring electrode and a reference electrode, and three gold conductive wires connected with the counter electrode, the measuring electrode and the reference electrode one by one are etched on the wafer; the measuring electrode is a circular electrode, the counter electrode is an annular electrode arranged around the measuring electrode, and an annular gap is arranged between the measuring electrode and the counter electrode; the silicon cover plate packaging layer is arranged on the wafer, and a reference electrode hole for exposing the reference electrode, a measurement electrode hole for exposing the measurement electrode and a counter electrode hole for exposing the counter electrode are arranged on the silicon cover plate packaging layer; the measuring electrode is covered with a perfluoroethylene propylene membrane, and the reference electrode is covered with an ion conducting layer; the counter electrode and the measuring electrode each comprise a gold layer arranged on the wafer and a platinum layer arranged on the gold layer.
The further improved scheme is as follows: the diameter of the measuring electrode is 2mm; the area ratio of the measuring electrode to the counter electrode is 1.5:1.
Based on the scheme, the diameter of the measuring electrode is 2mm, and the area ratio of the measuring electrode to the counter electrode is 1.5:1, so that detection data are more accurate.
The further improved scheme is as follows: the thickness of the gold layer is 20nm, and the thickness of the platinum layer is 50nm.
The further improved scheme is as follows: the wafer substrate is square, the counter electrode and the measuring electrode are positioned on the left half side of the wafer substrate, and the reference electrode is positioned on the right half side of the wafer substrate; the gold conductive wire for connecting the reference electrode is transversely arranged between the right boundary of the reference electrode and the wafer substrate, the gold conductive wire for connecting the counter electrode is longitudinally arranged between the gold layer of the counter electrode and the rear boundary of the wafer substrate, and the gold conductive wire for connecting the measuring electrode is longitudinally arranged between the gold layer of the measuring electrode and the rear boundary of the wafer substrate.
The further improved scheme is as follows: the reference electrode is a silver electrode or a silver chloride electrode.
The further improved scheme is as follows: the reference electrode has a thickness of 50nm.
The further improved scheme is as follows: the length of the wafer substrate is 12mm, the width of the wafer substrate is 6mm, and the thickness of the wafer substrate is 1mm.
The further improved scheme is as follows: the ion conducting layer is conductive epoxy glue, and the thickness of the conductive epoxy glue is 200um.
The beneficial effects of the invention are as follows:
the counter electrode, the measuring electrode and the reference electrode are integrated on the same wafer substrate, so that the integration degree is high, the volume is small, and the counter electrode, the measuring electrode and the reference electrode are convenient to install when the circuit board is manufactured; in addition, the wafer substrate comprises a wafer at the bottom and a gold layer at the upper layer, the gold layer has good conductivity and good inertness, and the connection of the counter electrode, the measuring electrode and the reference electrode with an external circuit can be realized by etching three gold conductive wires on the wafer; the silicon cover plate packaging layer (silicon nitride layer) plays an insulating role; the polyperfluoroethylene propylene diaphragm is coated on the measuring electrode, so that the stability of the detection data can be improved, the drift of the detection data can be reduced, and the electrode polarization can be prevented; the platinum layer can be used for testing the change of the voltage in water; the ion conducting layer can protect the reference electrode on the premise of ensuring the normal interaction of ions
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of the structure of the MEMS residual chlorine electrode of the invention.
FIG. 2 is a schematic diagram of the explosive structure of the MEMS residual chlorine electrode of the invention.
The reference numerals in the figures illustrate:
1-wafer; 2-a counter electrode; 3-measuring electrodes; 4-a reference electrode; 5-a silicon cover plate packaging layer; 6-ion conducting layer; 7-perfluoroethylene propylene membrane; 8-gold conductive wire.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention. All other embodiments, which can be obtained by a person skilled in the art without creative efforts, are included in the protection scope of the present invention based on the embodiments of the present invention.
Referring to fig. 1 and 2, a MEMS residual chlorine electrode for detecting tap water includes a wafer 1, a counter electrode 2, a measurement electrode 3, a reference electrode 4, and a silicon cover plate encapsulation layer 5; the wafer 1 is provided with a counter electrode 2, a measuring electrode 3 and a reference electrode 4, and three gold conductive wires 8 which are connected with the counter electrode 2, the measuring electrode 3 and the reference electrode 4 one by one are etched on the wafer 1; the measuring electrode 3 is a circular electrode, the counter electrode 2 is an annular electrode arranged around the measuring electrode 3, and an annular gap is arranged between the measuring electrode 3 and the counter electrode 2; the silicon cover plate packaging layer 5 is arranged on the wafer 1, and a reference electrode hole for exposing the reference electrode 4, a measurement electrode hole for exposing the measurement electrode 3 and a counter electrode hole for exposing the counter electrode 2 are arranged on the silicon cover plate packaging layer 5; the measuring electrode 3 is covered with a perfluoroethylene propylene membrane 7, and the reference electrode 4 is covered with an ion conducting layer 6; the counter electrode 2 and the measuring electrode 3 each include a gold layer provided on the wafer 1 and a platinum layer provided on the gold layer.
On the basis of the above scheme, the diameter of the measuring electrode 3 is 2mm; the area ratio of the measuring electrode 3 to the counter electrode 2 is 1.5:1. The diameter of the measuring electrode 3 is 2mm, and the area ratio of the measuring electrode 3 to the counter electrode 2 is 1.5:1, so that the detection data is more accurate; tables 1 to 3 are obtained from actual measurement data;
table 1 shows the error values with the standard solution when the area ratio of the measuring electrode 3 to the counter electrode 2 is 1, and the diameters of the measuring electrode 3 are 1.5mm, 2mm, 2.5mm and 3mm, respectively.
TABLE 1
Table 2 shows the error values with the standard solution when the area ratio of the measuring electrode 3 to the counter electrode 2 is 1.5, and the diameters of the measuring electrode 3 are 1.5mm, 2mm, 2.5mm and 3mm, respectively.
TABLE 2
Table 3 shows the error values with the standard solution when the area ratio of the measuring electrode 3 to the counter electrode 2 is 2 and the diameters of the measuring electrode 3 are 1.5mm, 2mm, 2.5mm and 3mm, respectively.
TABLE 3 Table 3
As can be seen from tables 1 to 3, when the diameter of the measuring electrode 3 is 2mm and the area ratio of the measuring electrode 3 to the counter electrode 2 is 1.5:1, the error of the detection data is minimum and the detection effect is optimal.
On the basis of any one of the above schemes, the thickness of the gold layer is 20nm, and the thickness of the platinum layer is 50nm.
On the basis of any one of the above schemes, the substrate of the wafer 1 is square, the counter electrode 2 and the measuring electrode 3 are positioned on the left half side of the substrate of the wafer 1, and the reference electrode 4 is positioned on the right half side of the substrate of the wafer 1; the gold conductive wire 8 for connecting the reference electrode 4 is transversely arranged between the right boundary of the substrate connecting the reference electrode 4 and the wafer 1, the gold conductive wire 8 for connecting the counter electrode 2 is longitudinally arranged between the gold layer of the counter electrode 2 and the rear boundary of the substrate of the wafer 1, and the gold conductive wire 8 for connecting the measuring electrode 3 is longitudinally arranged between the gold layer of the measuring electrode 3 and the rear boundary of the substrate of the wafer 1.
On the basis of any one of the above schemes, the reference electrode 4 is a silver electrode or a silver chloride electrode.
On the basis of any of the above embodiments, the reference electrode 4 has a thickness of 50nm.
On the basis of any one of the above schemes, the length of the substrate of the wafer 1 is 12mm, the width is 6mm, and the thickness of the wafer is 1mm.
On the basis of any one of the above schemes, the ion conducting layer is conductive epoxy glue, and the thickness of the conductive epoxy glue is 200um.
The manufacturing process of the MEMS residual chlorine electrode comprises the following steps:
S100, sputtering a gold layer with the thickness of 20nm on the wafer at the positions corresponding to the measuring electrode 3, the counter electrode 2 and the three gold conductive wires 8;
s200, sputtering a platinum layer with the thickness of 50nm on the gold layers of the measuring electrode 3 and the counter electrode 2;
S300, electroplating silver/silver chloride with the thickness of 50nm on the reference electrode 4 in a sputtering mode;
S400, a silicon cover plate packaging layer 5 (silicon nitride layer) is arranged on the wafer, and a reference electrode 4, a measuring electrode 3 and a counter electrode 2 are leaked out;
S500, a layer of perfluoroethylene propylene membrane 7 is coated on the measuring electrode 3 and the counter electrode 2, and an ion conducting layer 6 is coated on the reference electrode 4.
The invention is not limited to the above-described alternative embodiments, and any person who may derive other various forms of products in the light of the present invention, however, any changes in shape or structure thereof, all falling within the technical solutions defined in the scope of the claims of the present invention, fall within the scope of protection of the present invention.
Claims (7)
1. The MEMS residual chlorine electrode for detecting tap water is characterized by comprising a wafer, a counter electrode, a measuring electrode, a reference electrode and a silicon cover plate packaging layer; the wafer is provided with a counter electrode, a measuring electrode and a reference electrode, and three gold conductive wires connected with the counter electrode, the measuring electrode and the reference electrode one by one are etched on the wafer; the measuring electrode is a circular electrode, the counter electrode is an annular electrode arranged around the measuring electrode, and an annular gap is arranged between the measuring electrode and the counter electrode; the silicon cover plate packaging layer is arranged on the wafer, and a reference electrode hole for exposing the reference electrode, a measurement electrode hole for exposing the measurement electrode and a counter electrode hole for exposing the counter electrode are arranged on the silicon cover plate packaging layer; the measuring electrode is covered with a perfluoroethylene propylene membrane, and the reference electrode is covered with an ion conducting layer; the counter electrode and the measuring electrode both comprise a gold layer arranged on the wafer and a platinum layer arranged on the gold layer; the diameter of the measuring electrode is 2mm; the area ratio of the measuring electrode to the counter electrode is 1.5:1.
2. A MEMS residual chlorine electrode for detecting tap water as defined in claim 1, wherein: the thickness of the gold layer is 20nm, and the thickness of the platinum layer is 50nm.
3. A MEMS residual chlorine electrode for detecting tap water according to claim 1 or 2, wherein: the wafer substrate is square, the counter electrode and the measuring electrode are positioned on the left half side of the wafer substrate, and the reference electrode is positioned on the right half side of the wafer substrate; the gold conductive wire for connecting the reference electrode is transversely arranged between the right boundary of the reference electrode and the wafer substrate, the gold conductive wire for connecting the counter electrode is longitudinally arranged between the gold layer of the counter electrode and the rear boundary of the wafer substrate, and the gold conductive wire for connecting the measuring electrode is longitudinally arranged between the gold layer of the measuring electrode and the rear boundary of the wafer substrate.
4. A MEMS residual chlorine electrode for detecting tap water as defined in claim 1, wherein: the reference electrode is a silver electrode or a silver chloride electrode.
5. The MEMS residual chlorine electrode for detecting tap water of claim 4, wherein: the reference electrode has a thickness of 50nm.
6. A MEMS residual chlorine electrode for detecting tap water as defined in claim 1, wherein: the length of the wafer substrate is 12mm, the width of the wafer substrate is 6mm, and the thickness of the wafer is 1mm.
7. A MEMS residual chlorine electrode for detecting tap water as defined in claim 1, wherein: the ion conducting layer is conductive epoxy glue, and the thickness of the conductive epoxy glue is 200um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210259067.1A CN114740065B (en) | 2022-03-16 | 2022-03-16 | MEMS residual chlorine electrode for detecting tap water |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210259067.1A CN114740065B (en) | 2022-03-16 | 2022-03-16 | MEMS residual chlorine electrode for detecting tap water |
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| Publication Number | Publication Date |
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| CN114740065A CN114740065A (en) | 2022-07-12 |
| CN114740065B true CN114740065B (en) | 2024-05-03 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001281200A (en) * | 2000-03-31 | 2001-10-10 | Akifumi Yamada | Measuring electrode for free residual chlorine and measuring method using it |
| JP2005274226A (en) * | 2004-03-23 | 2005-10-06 | Akifumi Yamada | Free residual chlorine concentration measuring instrument and free residual chlorine measuring method |
| KR20130117515A (en) * | 2012-04-18 | 2013-10-28 | 대윤계기산업 주식회사 | Electrochemical gas permeable membrane type free residual chlorine sensor |
| CN105628757A (en) * | 2015-12-30 | 2016-06-01 | 中国科学院电子学研究所 | ORP sensing chip based on MEMS and manufacturing method of ORP sensing chip |
| CN212228800U (en) * | 2020-04-02 | 2020-12-25 | 郑州炜盛电子科技有限公司 | Diaphragm type residual chlorine sensor |
| CN215415193U (en) * | 2021-07-27 | 2022-01-04 | 江苏集萃分子工程研究院有限公司 | Electrochemical detection device and electrode chip thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2322707B (en) * | 1996-06-17 | 2000-07-12 | Mercury Diagnostics Inc | Electrochemical test device and related methods |
| JP4734097B2 (en) * | 2005-11-22 | 2011-07-27 | 学校法人慶應義塾 | Residual chlorine measuring method and residual chlorine measuring device |
| US20090278556A1 (en) * | 2006-01-26 | 2009-11-12 | Nanoselect, Inc. | Carbon Nanostructure Electrode Based Sensors: Devices, Processes and Uses Thereof |
-
2022
- 2022-03-16 CN CN202210259067.1A patent/CN114740065B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001281200A (en) * | 2000-03-31 | 2001-10-10 | Akifumi Yamada | Measuring electrode for free residual chlorine and measuring method using it |
| JP2005274226A (en) * | 2004-03-23 | 2005-10-06 | Akifumi Yamada | Free residual chlorine concentration measuring instrument and free residual chlorine measuring method |
| KR20130117515A (en) * | 2012-04-18 | 2013-10-28 | 대윤계기산업 주식회사 | Electrochemical gas permeable membrane type free residual chlorine sensor |
| CN105628757A (en) * | 2015-12-30 | 2016-06-01 | 中国科学院电子学研究所 | ORP sensing chip based on MEMS and manufacturing method of ORP sensing chip |
| CN212228800U (en) * | 2020-04-02 | 2020-12-25 | 郑州炜盛电子科技有限公司 | Diaphragm type residual chlorine sensor |
| CN215415193U (en) * | 2021-07-27 | 2022-01-04 | 江苏集萃分子工程研究院有限公司 | Electrochemical detection device and electrode chip thereof |
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