CN114737249A - Silicon carbide crystal ingot growth device and method - Google Patents
Silicon carbide crystal ingot growth device and method Download PDFInfo
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- CN114737249A CN114737249A CN202210519335.9A CN202210519335A CN114737249A CN 114737249 A CN114737249 A CN 114737249A CN 202210519335 A CN202210519335 A CN 202210519335A CN 114737249 A CN114737249 A CN 114737249A
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 145
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 145
- 239000013078 crystal Substances 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 14
- 239000002019 doping agent Substances 0.000 claims abstract description 46
- 238000010438 heat treatment Methods 0.000 claims abstract description 37
- 210000004349 growth plate Anatomy 0.000 claims abstract description 29
- 238000000859 sublimation Methods 0.000 claims abstract description 25
- 230000008022 sublimation Effects 0.000 claims abstract description 25
- 238000001816 cooling Methods 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 14
- 230000007246 mechanism Effects 0.000 claims abstract description 13
- 238000003860 storage Methods 0.000 claims abstract description 12
- 238000002156 mixing Methods 0.000 claims abstract description 10
- 238000009413 insulation Methods 0.000 claims description 9
- 239000011229 interlayer Substances 0.000 claims description 8
- 239000000110 cooling liquid Substances 0.000 claims description 7
- 230000017525 heat dissipation Effects 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 4
- 241000264877 Hippospongia communis Species 0.000 claims description 3
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 3
- 239000010425 asbestos Substances 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 239000003365 glass fiber Substances 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 239000011572 manganese Substances 0.000 claims description 3
- 239000011490 mineral wool Substances 0.000 claims description 3
- 229910052895 riebeckite Inorganic materials 0.000 claims description 3
- 230000000630 rising effect Effects 0.000 claims description 3
- 239000000523 sample Substances 0.000 claims description 3
- 239000013076 target substance Substances 0.000 claims description 3
- 230000003044 adaptive effect Effects 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims description 2
- 239000002826 coolant Substances 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 4
- 238000009826 distribution Methods 0.000 abstract description 3
- 230000001360 synchronised effect Effects 0.000 abstract description 2
- 101150114468 TUB1 gene Proteins 0.000 description 3
- 238000005092 sublimation method Methods 0.000 description 3
- 238000001953 recrystallisation Methods 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a silicon carbide crystal ingot growth device, which relates to the technical field of silicon carbide crystal ingots and comprises a barrel, wherein a heating inner container is arranged in the barrel, and a cover body is arranged at the upper part of the barrel; a plurality of feeding pipes penetrate through the cylinder body, one ends of the feeding pipes penetrate through the heating inner container to extend into the heating inner container, and a crucible is fixed on the feeding pipes; a plurality of crucibles are arranged inside the heating inner container to form an inverted stack structure; each feeding pipe is connected with a material storage box, and a feeding mechanism is arranged between the material storage box and the feeding pipe; the lower part of the cover body is provided with a rotatable silicon carbide ingot growth plate, and a cooling groove is arranged above the silicon carbide ingot growth plate. The invention also provides a method for growing the silicon carbide crystal ingot, which grows the silicon carbide crystal ingot in a sublimation mode between the silicon carbide and the doping substances. The invention can lead the silicon carbide and the doping agent to carry out synchronous sublimation and three-dimensional distribution and mixing, generate the semi-insulating silicon carbide crystal ingot with more uniform doping concentration and improve the quality of the semi-insulating silicon carbide crystal ingot.
Description
Technical Field
The invention belongs to the technical field of silicon carbide crystal ingots, and particularly relates to a silicon carbide crystal ingot growth device and a silicon carbide crystal ingot growth method.
Background
Silicon carbide is widely used in industrial production to improve the wear resistance of products and prolong the service life due to the advantages of stable chemical property, high heat conductivity coefficient, small thermal expansion coefficient, good wear resistance and the like. The semi-insulating silicon carbide crystal ingot obtained by doping is a more excellent next-generation semiconductor device material due to the advantages of maximum breakdown voltage (BREAK FIELD VOLTAGE) and thermal conductivity (THERMAL CONductivity). In the preparation of silicon carbide ingots, semi-insulating silicon carbide ingots are generally prepared by mixing and synthesizing a dopant with silicon carbide.
However, since the sublimation temperatures of the dopant and silicon carbide are different, for example, the sublimation temperature of silicon carbide is about 2700 deg.C, the sublimation temperature of the dopant chromium is about 1857 deg.C, and the sublimation temperature of vanadium is about 1910 deg.C, which is much lower than the sublimation temperature of silicon carbide. This tends to induce sublimation and non-uniform doping of the resulting semi-insulating silicon carbide ingot, and thus a homogeneously doped semi-insulating silicon carbide ingot cannot be obtained. Therefore, a silicon carbide crystal ingot growing device and a method are designed and proposed, and a homogeneous semi-insulating silicon carbide crystal ingot is generated in a gradient sublimation mode.
Disclosure of Invention
The invention aims to solve the defect of uneven doping of a semi-insulating silicon carbide ingot generated by a method for mixing and synthesizing a doping agent and silicon carbide in the prior art, and provides a silicon carbide ingot growing device.
In order to achieve the purpose, the invention adopts the following technical scheme:
designing a silicon carbide crystal ingot growth device, which comprises a cylinder body, wherein a heating inner container is fixedly arranged at the lower part of the cylinder body in an embedded mode, and an adaptive cover body is arranged at the upper part of the cylinder body; a plurality of feeding pipes penetrate through the cylinder body, one ends of the feeding pipes penetrate through the heating inner container to extend into the heating inner container, and a crucible is fixed on the feeding pipes; the plurality of crucibles are arranged inside the heating inner container to form an inverted stack structure; one end of each feeding pipe, which is positioned on the cylinder body, is connected with a material storage box, and a feeding mechanism is arranged between the material storage box and the feeding pipe; a silicon carbide ingot growth plate is arranged below the cover body, and a driving motor for driving the silicon carbide ingot growth plate to rotate is fixedly arranged on the cover body; a cooling groove is arranged above the silicon carbide ingot growing plate; the cover body is provided with an injection pipe connected with the cooling tank; the cover body is provided with heat dissipation holes for honeycombs.
Compared with the prior art, the silicon carbide crystal ingot growth device has the following beneficial effects:
1) according to the silicon carbide crystal ingot growing device provided by the invention, sublimation mixing is carried out in a dopant throwing mode, the problem that silicon carbide and a dopant are sublimated successively due to different sublimation temperatures can be effectively avoided, the uniformity of semi-insulating silicon carbide crystal ingot generation doping can be effectively improved, and the quality of the semi-insulating silicon carbide crystal ingot is improved.
2) According to the silicon carbide ingot growing device provided by the invention, the distribution of the feeding pipes adopts an inverted stack type structure, so that the dopant is distributed in the silicon carbide sublimation channel in a three-dimensional manner, and therefore, the silicon carbide and the dopant can be fully mixed in the sublimation process, and the silicon carbide can be uniformly distributed and doped in a manner of synchronously sublimating, three-dimensionally distributing and mixing.
3) According to the silicon carbide crystal ingot growing device provided by the invention, the rotating silicon carbide crystal ingot growing plate is adopted for growing the silicon carbide crystal ingot, so that silicon carbide and dopant gas which rise to the silicon carbide crystal ingot growing plate can be further uniformly distributed, the doping uniformity of the silicon carbide crystal ingot is further improved, and the quality of the semi-insulating silicon carbide crystal ingot is improved.
Further, a heat insulation interlayer is arranged in the cylinder body, and the heat insulation interlayer is one or a mixture of glass fiber, asbestos, rock wool or silicate.
Further, the feeding pipe is a heat insulation pipe made of heat insulation materials.
Furthermore, the delivery mechanism comprises a delivery motor and a spiral feeding rod, the spiral feeding rod is fixedly connected to the output end of the delivery motor, and the rotating radius of the spiral feeding rod is matched with the inner diameter of the feeding pipe.
Further, the rotating diameter of the silicon carbide ingot growth plate is slightly smaller than the inner diameter of the cylinder.
Furthermore, one side of barrel upper portion is equipped with temperature sensor, temperature sensor's probe extends to the inside of barrel.
Furthermore, a plurality of cooling pipes are uniformly distributed at the bottom of the silicon carbide ingot growth plate and are communicated with the cooling grooves.
The invention also provides a method for growing the silicon carbide crystal ingot, which is used for the silicon carbide crystal ingot growing device to grow the silicon carbide crystal ingot by synchronously subliming, three-dimensionally distributing and mixing the silicon carbide and the doping substances, and comprises the following specific steps:
and 4, when the doped silicon carbide gas rises to the silicon carbide ingot growth plate, reducing the temperature, and recrystallizing the silicon carbide ingot growth plate to generate the silicon carbide ingot uniformly doped with the target substance.
Further, in step 1, the dopant is one of vanadium, chromium, manganese or cobalt.
Further, in step 2, the amount of the cooling liquid injected is equal to the amount of evaporation.
Compared with the prior art, the method for growing the silicon carbide crystal ingot has the advantages that: the problem that the silicon carbide and the doping agent are sublimated successively due to different sublimation temperatures can be solved, the silicon carbide and the doping agent can be sublimated and mixed synchronously, semi-insulating silicon carbide crystal ingots with more uniform doping concentration can be generated, and the quality of the semi-insulating silicon carbide crystal ingots is improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic view of the internal structure of the present invention;
FIG. 3 is a schematic view of the internal structure of the feeding mechanism in the present invention;
FIG. 4 is a schematic illustration of sublimation doping of silicon carbide and a dopant material in accordance with example 1 of the present invention;
FIG. 5 is a schematic illustration of sublimation doping of silicon carbide and a dopant material in accordance with example 2 of the present invention;
labeled as: 1. a barrel; 11. a heat insulating interlayer; 2. heating the inner container; 3. a cover body; 4. a feeding pipe; 41. a crucible; 5. a material storage box; 6. a delivery mechanism; 61. a delivery motor; 62. a screw feed rod; 7. a silicon carbide ingot growth plate; 71. a drive motor; 72. a cooling tank; 73. a cooling tube; 74. an injection pipe; 75. heat dissipation holes; 8. a temperature sensor.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention; it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments, and all other embodiments obtained by those skilled in the art without any inventive work are within the scope of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "top/bottom", etc. indicate orientations or positional relationships based on orientations or positional relationships shown in the drawings, which are merely for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "embedded", "provided", "sleeved/connected", "connected", and the like, are to be understood in a broad sense, e.g., "connected", which may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The structural features of the present invention will now be described in detail with reference to the accompanying drawings.
Referring to fig. 1-2, a silicon carbide crystal ingot growth device comprises a cylinder body 1, a heating inner container 2 is fixedly arranged at the lower part of the cylinder body 1 in an embedded mode, the heating inner container 2 is made of a refractory material and used for heating silicon carbide to sublimate the silicon carbide, the bottom of the heating inner container 2 is exposed at the outer side of the cylinder body 1 so as to facilitate heating of the heating inner container 2, a heat insulation interlayer 11 is arranged inside the cylinder body 1, the heat insulation interlayer 11 is one or a mixture of several of glass fiber, asbestos, rock wool or silicate, the heat insulation interlayer 11 can play a good heat insulation role for the heating inner container 2, a cover body 3 which is matched with the upper part of the cylinder body 1 is arranged on the upper part of the cylinder body 1, and the cover body 3 plays a role in sealing the cylinder body 1.
Referring to fig. 1-2, a plurality of feeding pipes 4 penetrate through the cylinder 1, the feeding pipes 4 are used for feeding doping components such as dopants, one ends of the feeding pipes 4 penetrate through the heating liner 2 and extend into the heating liner 2, and are fixed with crucibles 41, the feeding pipes 4 are heat-insulating pipes made of heat-insulating materials, and can isolate most of the temperature inside the heating liner 2, so that the dopants in the feeding pipes 4 cannot sublime in advance, the crucibles 41 are arranged inside the heating liner 2 in an inverted stack type structure, the crucibles 41 are distributed inside the heating liner 2 in an inverted stack type manner, and the dopants can be uniformly mixed into silicon carbide sublimation gas in the sublimation process, so that the uniformly mixed silicon carbide-doped sublimation gas is obtained.
Referring to fig. 3, one end of each feeding pipe 4 located on the barrel 1 is connected with a storage box 5, a feeding mechanism is arranged between the storage box 5 and the feeding pipe 4, the feeding mechanism 6 comprises a feeding motor 61 and a spiral feeding rod 62, the spiral feeding rod 62 is fixedly connected to the output end of the feeding motor 61, the rotating radius of the spiral feeding rod 62 is matched with the inner diameter of the feeding pipe 4, the rotating speed of the spiral feeding rod 62 is controlled, the feeding amount of the feeding mechanism 6 can be controlled, and the silicon carbide sublimation speed is combined at a fixed temperature, so that the feeding amount of the dopant is calculated, the rotating speed of the spiral feeding rod 62 can be determined by the silicon carbide doping amount, so that the uniform feeding is achieved, and the uniform doping and mixing after the silicon carbide and the dopant are synchronously sublimated are realized.
Referring to fig. 1-2 and 4, a silicon carbide ingot growth plate 7 is arranged below a cover body 3, a driving motor 71 for driving the silicon carbide ingot growth plate 7 to rotate is fixedly arranged on the cover body 3, the rotating diameter of the silicon carbide ingot growth plate 7 is slightly smaller than the inner diameter of a cylinder body 1, a cooling groove 72 is arranged above the silicon carbide ingot growth plate 7, the cover body 3 is provided with an injection pipe 74 connected with the cooling groove 72, the cover body 3 is provided with heat dissipation holes 75 for honeycomb shape, cooling liquid is injected into the cooling groove 72 to reduce the temperature of the silicon carbide ingot growth plate 7, the heat dissipation holes 75 are used for discharging vapor of the cooling liquid, when sublimation gas of silicon carbide and doping agent meets the cold silicon carbide ingot growth plate 7, recrystallization is carried out to generate semi-insulating silicon carbide ingots, and the silicon carbide and the doping agent can be redistributed in the recrystallization process by the rotating mode of the silicon carbide ingot growth plate 7, the higher the rotation speed of the silicon carbide crystal ingot growth plate 7 is, the more uniformly the silicon carbide and the dopant are doped and mixed, and the more uniformly the silicon carbide crystal ingot is doped.
Referring to fig. 2 and 4, a temperature sensor 8 is provided at one side of the upper portion of the tub 1, a probe of the temperature sensor 8 extends to the inside of the tub 1, and the temperature sensor 8 is used to sense the temperature of the upper portion of the tub 1.
According to the silicon carbide crystal ingot growing device, on one hand, the doping agent is distributed in the silicon carbide sublimation channel in a three-dimensional mode, so that silicon carbide and the doping agent can be fully mixed in the sublimation process, and the silicon carbide can be uniformly doped in a synchronous sublimation three-dimensional distribution mixing mode, on the other hand, the silicon carbide crystal ingot is grown in a rotating mode, so that silicon carbide and the doping agent gas can be further uniformly distributed during crystallization, and the quality of the semi-insulating silicon carbide crystal ingot is improved.
Example 2
Referring to fig. 1-2 and 5, as another preferred embodiment of the present invention, it is different from embodiment 1 in that a plurality of cooling pipes 73 are uniformly distributed on the bottom of a silicon carbide ingot growth plate 7, the cooling pipes 73 are communicated with cooling grooves 72, and the cooling area of the silicon carbide ingot growth plate 7 can be increased by the cooling pipes 73, so that doped silicon carbide gas can be more easily recrystallized to grow a semi-insulating silicon carbide ingot.
In order to further explain, the invention also provides a method for growing the silicon carbide crystal ingot, which is used for a silicon carbide crystal ingot growing device to grow the silicon carbide crystal ingot by a mode of synchronously subliming, three-dimensionally distributing and mixing silicon carbide and doping substances, and comprises the following specific steps:
And 2, increasing the temperature inside the heating inner container 2 to more than 2700 ℃, starting the delivery mechanism 6 after the temperature sensor 8 detects that the temperature reaches 2700 ℃, continuously injecting cooling liquid into the cooling tank 72, and starting the driving motor 71 to drive the silicon carbide ingot growth plate 7 to rotate, wherein the injection amount of the cooling liquid is equal to the evaporation amount.
And 3, enabling the dopant to enter the crucible 41 at a constant speed according to the doping proportion, heating the silicon carbide in the inner container 2 to slowly sublimate, and rising at a constant speed, wherein after the dopant such as the dopant enters the crucible 41, the dopant can be quickly sublimated after being thrown in because the temperature is far higher than the sublimation temperature of the dopant, and the dopant can be mixed with the passing silicon carbide gas to continuously rise together.
And 4, after the doped silicon carbide gas rises to the silicon carbide ingot growth plate 7, reducing the temperature, and recrystallizing the silicon carbide ingot growth plate 7 to generate the silicon carbide ingot uniformly doped with the target substance.
Although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. The silicon carbide crystal ingot growth device comprises a cylinder body (1), and is characterized in that a heating inner container (2) is fixedly arranged at the lower part of the cylinder body (1) in an embedded mode, and an adaptive cover body (3) is arranged at the upper part of the cylinder body (1);
a plurality of feeding pipes (4) penetrate through the barrel (1), one end of each feeding pipe (4) penetrates through the heating inner container (2) to extend into the heating inner container (2), and a crucible (41) is fixed on each feeding pipe;
the plurality of crucibles (41) are arranged in the heating inner container (2) in an inverted stack structure;
one end of each feeding pipe (4) positioned on the barrel (1) is connected with a material storage box (5), and a feeding mechanism is arranged between the material storage box (5) and the feeding pipe (4);
a silicon carbide ingot growth plate (7) is arranged below the cover body (3), and a driving motor (71) for driving the silicon carbide ingot growth plate (7) to rotate is fixedly arranged on the cover body (3);
a cooling groove (72) is arranged above the silicon carbide ingot growth plate (7);
the cover body (3) is provided with an injection pipe (74) connected with the cooling tank (72);
the cover body (3) is provided with heat dissipation holes (75) for honeycombs.
2. The silicon carbide crystal ingot growing device according to claim 1, wherein a heat insulation interlayer (11) is arranged inside the cylinder body (1), and the heat insulation interlayer (11) is one or a mixture of glass fiber, asbestos, rock wool or silicate.
3. The silicon carbide ingot growing apparatus as claimed in claim 1, wherein the feeding pipe (4) is a heat-insulating pipe made of a heat-insulating material.
4. The silicon carbide crystal ingot growing device according to claim 1, wherein the feeding mechanism (6) comprises a feeding motor (61) and a spiral feeding rod (62), the spiral feeding rod (62) is fixedly connected to the output end of the feeding motor (61), and the rotation radius of the spiral feeding rod (62) is matched with the inner diameter of the feeding pipe (4).
5. Silicon carbide ingot growth apparatus according to claim 1, characterized in that the rotation diameter of the silicon carbide ingot growth plate (7) is slightly smaller than the inner diameter of the cylinder (1).
6. The silicon carbide ingot growing device according to claim 1, wherein a temperature sensor (8) is provided at one side of the upper part of the cylinder (1), and a probe of the temperature sensor (8) extends to the inside of the cylinder (1).
7. The silicon carbide ingot growing device according to claim 1, wherein a plurality of cooling pipes (73) are uniformly distributed on the bottom of the silicon carbide ingot growing plate (7), and the cooling pipes (73) are communicated with the cooling groove (72).
8. A method for growing a silicon carbide ingot by the silicon carbide ingot growing apparatus as set forth in any one of claims 1 to 7, wherein the silicon carbide ingot is grown by simultaneous sublimation and stereotactic mixing of silicon carbide and a dopant, the method comprising the steps of:
step 1), according to the doping proportion of a silicon carbide crystal ingot, putting silicon carbide into a heating inner container (2), putting doping components such as a doping agent into a material storage box (5), and preheating the heating inner container (2);
step 2), raising the temperature inside the heating inner container (2) to be more than 2700 ℃, starting the delivery mechanism (6) when the temperature sensor (8) detects that the temperature reaches 2700 ℃, continuously injecting cooling liquid into the cooling tank (72), and starting the driving motor (71) to drive the silicon carbide crystal ingot growth plate (7) to rotate;
step 3), enabling the doping agent to enter the crucible (41) at a constant speed according to the doping proportion, heating the silicon carbide in the inner container (2) to slowly sublimate, and rising at a constant speed, after the doping materials such as the doping agent enter the crucible (41), because the temperature is far higher than the sublimation temperature, the doping materials can be quickly sublimated after being thrown into the crucible, and the doping materials are mixed with the silicon carbide gas and continuously rise together;
and 4) when the doped silicon carbide gas rises to the silicon carbide ingot growth plate (7), reducing the temperature, and recrystallizing the silicon carbide ingot growth plate (7) to generate the semi-insulating silicon carbide ingot uniformly doped with the target substance.
9. A method for growing a silicon carbide ingot as set forth in claim 7 wherein in step 1) the dopant is one of vanadium, chromium, manganese or cobalt.
10. A method for growing a silicon carbide ingot as set forth in claim 7 wherein in step 2), the amount of the coolant liquid injected is equal to the amount of evaporation.
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| CN202210519335.9A CN114737249A (en) | 2022-05-13 | 2022-05-13 | Silicon carbide crystal ingot growth device and method |
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| CN202210519335.9A CN114737249A (en) | 2022-05-13 | 2022-05-13 | Silicon carbide crystal ingot growth device and method |
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