CN113005512A - Silicon carbide single crystal ingot growth equipment and method - Google Patents
Silicon carbide single crystal ingot growth equipment and method Download PDFInfo
- Publication number
- CN113005512A CN113005512A CN202110416789.9A CN202110416789A CN113005512A CN 113005512 A CN113005512 A CN 113005512A CN 202110416789 A CN202110416789 A CN 202110416789A CN 113005512 A CN113005512 A CN 113005512A
- Authority
- CN
- China
- Prior art keywords
- heating
- graphite
- silicon carbide
- cavity
- source material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 68
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 32
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 98
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 97
- 239000010439 graphite Substances 0.000 claims abstract description 97
- 239000000463 material Substances 0.000 claims abstract description 91
- 239000000126 substance Substances 0.000 claims abstract description 29
- 230000008022 sublimation Effects 0.000 claims abstract description 28
- 238000000859 sublimation Methods 0.000 claims abstract description 28
- 238000000926 separation method Methods 0.000 claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- 239000002245 particle Substances 0.000 claims abstract description 6
- 239000000843 powder Substances 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims description 105
- 239000007789 gas Substances 0.000 claims description 51
- 239000012159 carrier gas Substances 0.000 claims description 30
- 230000007246 mechanism Effects 0.000 claims description 26
- 239000007787 solid Substances 0.000 claims description 12
- 238000011084 recovery Methods 0.000 claims description 10
- 238000007789 sealing Methods 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 6
- 230000003247 decreasing effect Effects 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 5
- 230000005674 electromagnetic induction Effects 0.000 claims description 3
- 230000001737 promoting effect Effects 0.000 claims description 3
- 238000004064 recycling Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000011148 porous material Substances 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 1
- 238000002360 preparation method Methods 0.000 abstract description 7
- 239000000919 ceramic Substances 0.000 abstract description 3
- 239000012071 phase Substances 0.000 description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000010288 cold spraying Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000002468 ceramisation Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 210000000664 rectum Anatomy 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000005092 sublimation method Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- -1 alkanes and alkenes Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000005130 seeded sublimation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (13)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110416789.9A CN113005512B (en) | 2021-04-19 | 2021-04-19 | Silicon carbide single crystal ingot growth equipment and method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110416789.9A CN113005512B (en) | 2021-04-19 | 2021-04-19 | Silicon carbide single crystal ingot growth equipment and method |
Publications (2)
Publication Number | Publication Date |
---|---|
CN113005512A true CN113005512A (en) | 2021-06-22 |
CN113005512B CN113005512B (en) | 2023-08-08 |
Family
ID=76388607
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110416789.9A Active CN113005512B (en) | 2021-04-19 | 2021-04-19 | Silicon carbide single crystal ingot growth equipment and method |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN113005512B (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114737249A (en) * | 2022-05-13 | 2022-07-12 | 安徽微芯长江半导体材料有限公司 | Silicon carbide crystal ingot growth device and method |
CN117779179A (en) * | 2024-02-23 | 2024-03-29 | 苏州优晶半导体科技股份有限公司 | Single crystal growth device and single crystal growth method |
CN117779179B (en) * | 2024-02-23 | 2024-06-07 | 苏州优晶半导体科技股份有限公司 | Single crystal growth device and single crystal growth method |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010004877A1 (en) * | 1999-12-27 | 2001-06-28 | Masashi Shigeto | Method and apparatus for producing silicon carbide single crystal |
JP2006021954A (en) * | 2004-07-08 | 2006-01-26 | Fuji Electric Holdings Co Ltd | Method and apparatus for manufacturing silicon carbide single crystal film |
JP2015051888A (en) * | 2013-09-05 | 2015-03-19 | 株式会社フジクラ | Apparatus for making single crystal |
CN110408998A (en) * | 2019-07-29 | 2019-11-05 | 江苏星特亮科技有限公司 | A kind of single-crystal silicon carbide continuous growing device and its growing method |
CN214736209U (en) * | 2021-04-19 | 2021-11-16 | 芯璨半导体科技(山东)有限公司 | Silicon carbide single crystal ingot growth equipment |
-
2021
- 2021-04-19 CN CN202110416789.9A patent/CN113005512B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010004877A1 (en) * | 1999-12-27 | 2001-06-28 | Masashi Shigeto | Method and apparatus for producing silicon carbide single crystal |
JP2006021954A (en) * | 2004-07-08 | 2006-01-26 | Fuji Electric Holdings Co Ltd | Method and apparatus for manufacturing silicon carbide single crystal film |
JP2015051888A (en) * | 2013-09-05 | 2015-03-19 | 株式会社フジクラ | Apparatus for making single crystal |
CN110408998A (en) * | 2019-07-29 | 2019-11-05 | 江苏星特亮科技有限公司 | A kind of single-crystal silicon carbide continuous growing device and its growing method |
CN214736209U (en) * | 2021-04-19 | 2021-11-16 | 芯璨半导体科技(山东)有限公司 | Silicon carbide single crystal ingot growth equipment |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114737249A (en) * | 2022-05-13 | 2022-07-12 | 安徽微芯长江半导体材料有限公司 | Silicon carbide crystal ingot growth device and method |
CN117779179A (en) * | 2024-02-23 | 2024-03-29 | 苏州优晶半导体科技股份有限公司 | Single crystal growth device and single crystal growth method |
CN117779179B (en) * | 2024-02-23 | 2024-06-07 | 苏州优晶半导体科技股份有限公司 | Single crystal growth device and single crystal growth method |
Also Published As
Publication number | Publication date |
---|---|
CN113005512B (en) | 2023-08-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN214736209U (en) | Silicon carbide single crystal ingot growth equipment | |
JP5805110B2 (en) | Apparatus and method for purifying metallic silicon for solar cells | |
KR102599773B1 (en) | Synthesis of boron nitride nanotubes through direct induction | |
JP4331791B2 (en) | Film forming method and film forming apparatus | |
US20090289390A1 (en) | Direct silicon or reactive metal casting | |
CN102992327B (en) | Method and equipment for purifying polycrystalline silicon through solidification crucible rotary electron beam melting | |
WO2009113441A1 (en) | Silicon single crystal pull-up apparatus and process for producing silicon single crystal | |
JP2001526163A (en) | Method and apparatus for growing high purity single crystal silicon carbide | |
US7635395B2 (en) | Solid material gasification method | |
CN113005512B (en) | Silicon carbide single crystal ingot growth equipment and method | |
US20160230307A1 (en) | Apparatus and methods for producing silicon-ingots | |
CN112831840A (en) | Single crystal growing device | |
WO2011114102A1 (en) | Method for synthesising diamond | |
JP5313534B2 (en) | Silicon single crystal pulling apparatus and silicon single crystal manufacturing method | |
KR102219134B1 (en) | Manufacturing method of nanopowder using DC arc plasma and apparatus for manufacturing the same | |
CN117187960A (en) | Crucible for improving doping efficiency of large-size crystal and silicon carbide crystal doping method | |
CN214736210U (en) | Silicon carbide steam preparation device | |
WO2018020821A1 (en) | Single crystal producing device | |
US20100050932A1 (en) | Apparatus and Method of Direct Electric Melting a Feedstock | |
WO2007087589A2 (en) | Silicon carbide formation by alternating pulses | |
CN214736208U (en) | Sublimation gaseous phase material separator | |
CN103998648A (en) | Deposition cartridge for production materials via the chemical vapor deposition process | |
CN102787305A (en) | Device and method for reducing impurity deposit in chemical vapor deposition process | |
JPH1171605A (en) | Manufacture of fine particle, and manufacturing device therefor | |
KR101632321B1 (en) | APPARATUS AND METHOD OF MAKING Sm2Co17 NANO POWDER |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20211117 Address after: 100176 935, floor 9, building 2, yard 38, Kechuang Fifth Street, Beijing Economic and Technological Development Zone, Daxing District, Beijing Applicant after: Beijing libaosheng Technology Co.,Ltd. Address before: Room 501, 5th floor, 3749 Erhuan East Road, Licheng District, Jinan City, Shandong Province Applicant before: XINCAN semiconductor technology (Shandong) Co.,Ltd. |
|
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240509 Address after: 101300 North Wenhuaying Village, Shunyi District, Beijing (No. 1, Shunchuang Second Road) Patentee after: Beijing Changlong Zhixin Semiconductor Co.,Ltd. Country or region after: China Address before: 100176 935, floor 9, building 2, yard 38, Kechuang Fifth Street, Beijing Economic and Technological Development Zone, Daxing District, Beijing Patentee before: Beijing libaosheng Technology Co.,Ltd. Country or region before: China |