CN114737173B - Microwave resonant cavity for plasma chemical vapor deposition process - Google Patents
Microwave resonant cavity for plasma chemical vapor deposition process Download PDFInfo
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- CN114737173B CN114737173B CN202210455725.4A CN202210455725A CN114737173B CN 114737173 B CN114737173 B CN 114737173B CN 202210455725 A CN202210455725 A CN 202210455725A CN 114737173 B CN114737173 B CN 114737173B
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- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 18
- 239000000498 cooling water Substances 0.000 claims abstract description 85
- 238000000151 deposition Methods 0.000 claims abstract description 34
- 230000008021 deposition Effects 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 230000008878 coupling Effects 0.000 claims description 80
- 238000010168 coupling process Methods 0.000 claims description 80
- 238000005859 coupling reaction Methods 0.000 claims description 80
- 239000011159 matrix material Substances 0.000 claims description 5
- 238000001816 cooling Methods 0.000 abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 11
- 230000006978 adaptation Effects 0.000 abstract 1
- 238000012423 maintenance Methods 0.000 abstract 1
- 239000010453 quartz Substances 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 239000013307 optical fiber Substances 0.000 description 8
- 238000005137 deposition process Methods 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000004017 vitrification Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a microwave resonant cavity for a plasma chemical vapor deposition process, which comprises a cylindrical microwave resonant cavity, wherein a first cooling water cavity and a second cooling water cavity are respectively arranged on two sides of an A surface of the cylindrical microwave resonant cavity; the center of the cylindrical microwave resonant cavity is penetrated by a PCVD deposition substrate tube which is positioned at the center of the cylindrical microwave resonant cavity; the center of the cylindrical microwave resonant cavity is provided with a cavity body, the outer side of the cavity body is provided with cooling water channels, and a plurality of cooling water channels are uniformly distributed in the side wall of the cylindrical microwave resonant cavity; the cooling water channel is communicated with a first cooling water cavity and a second cooling water cavity which are respectively arranged on the top side and the bottom side of the cavity in the cavity. The invention has the characteristics of internally-arranged circulating water cooling system, adaptation to high-temperature environment work, reduction of cavity size deformation, maintenance of lower load reflection coefficient, improvement of microwave energy utilization rate and acquisition of high-density plasma.
Description
Technical Field
The invention relates to a microwave resonant cavity for a plasma chemical vapor deposition process, in particular to a microwave resonant cavity for the plasma chemical vapor deposition process, which is provided with a built-in circulating water cooling system, is suitable for working in a high-temperature environment, reduces the dimensional deformation of the cavity, maintains a lower load reflection coefficient, improves the microwave energy utilization rate and obtains high-density plasma.
Background
In the existing four mainstream optical fiber preform preparation techniques, OVD/VAD is achieved by using oxyhydrogen flame and SiCl 4 /GeCl 4 The hydrolysis reaction of the raw materials is low in deposition efficiency, particularly when F, ge, B, P and other elements are doped, the doping efficiency is low, and the method is not suitable for producing special optical fiber preforms. For MCVD, the deposition rate is low, the utilization rate of raw materials is low, and the doping efficiency is low when elements such as F, ge, B and the like are doped, so that the method is not suitable for producing high-doped optical fiber preforms.
The PCVD (Microwave Activated Plasma Chemical Vapor Deposition ) process is one of the main processes for preparing the core rod of the optical fiber preform. The microwave plasma has the advantages of high energy, strong activity, high excited plasma density, stable operation, no electrode pollution and the like, and is very suitable for depositing optical fiber perform. Under the low pressure state, the raw material gas (mainly SiCl) entering the quartz reaction tube is acted by high-frequency microwave 4 ，GeCl 4 ，POCl 3 ，O 2 AndC 2 F 6 Etc.) are partially ionized into an activated plasma state, and these reactive ions can react rapidly and deposit in a glassy state on the inner surface of the tube wall. The microwave resonant cavity can move rapidly, and the deposition thickness of a single layer is thin, so that the fine and complex refractive index profile is easy to manufacture.
For PCVD, the doping efficiency is very high, and the single-layer deposition layer is very thin, so that the PCVD is particularly suitable for producing optical fiber preforms with complicated refractive index profiles.
The microwave resonant cavity for exciting the plasma chemical vapor deposition is a core device of the PCVD deposition machine tool.
At present, the existing microwave body resonant cavities for manufacturing the optical fiber preform mainly comprise a coaxial type microwave resonant cavity and a cylindrical type microwave resonant cavity, wherein the coaxial type microwave resonant cavity is suitable for processing a quartz reaction tube with a relatively small outer diameter, the cylindrical type microwave resonant cavity is suitable for processing a quartz reaction tube with a relatively large outer diameter, and the two microwave resonant cavities have respective defects.
The coaxial microwave resonant cavity is not suitable for manufacturing large-diameter optical fiber preforms due to structural limitations. And when high-power microwaves are input, the cavity and the coaxial line waveguide are easy to generate heat, and the resonant cavity or the coaxial line waveguide can be burnt out when serious.
The conventional cylindrical (TE 111 mode) microwave resonant cavity has the problem that the load is difficult to match, i.e. the load reflection coefficient S can not be ensured 11 Is small enough. Due to doped SiO after vitrification during PCVD deposition 2 The fused glass is deposited on the inner wall of the quartz tube reaction tube, the thickness of the tube wall is gradually increased, the inner diameter of the reaction tube is continuously reduced, the plasma density and the morphology are changed, the load of the resonant cavity is changed, and the load reflection coefficient S is changed 11 There is a possibility that the load cannot be matched because of the increase. In addition, the load reflection coefficient S 11 An increase in reflected power means an increase in reflected power, a decrease in microwave energy absorbed by the load, and a decrease in energy utilization efficiency of the entire microwave system, which in severe cases may increase the workload of the microwave matching element or cause damage to the microwave matching element.
Disclosure of Invention
The invention aims to provide a microwave resonant cavity for a plasma chemical vapor deposition process, which is provided with a built-in circulating water cooling system, is suitable for working in a high-temperature environment, reduces the dimensional deformation of a cavity, maintains a lower load reflection coefficient, improves the utilization rate of microwave energy and obtains high-density plasma.
The aim of the invention can be achieved by the following technical scheme:
the microwave resonant cavity for the plasma chemical vapor deposition process comprises a cylindrical microwave resonant cavity, wherein a first cooling water cavity and a second cooling water cavity are respectively arranged on two sides of an A surface of the cylindrical microwave resonant cavity;
the center of the cylindrical microwave resonant cavity is penetrated by a PCVD deposition substrate tube which is positioned at the center of the cylindrical microwave resonant cavity;
the center of the cylindrical microwave resonant cavity is provided with a cavity body, the outer side of the cavity body is provided with cooling water channels, and a plurality of cooling water channels are uniformly distributed in the side wall of the cylindrical microwave resonant cavity; the cooling water channel is communicated with a first cooling water cavity and a second cooling water cavity which are respectively arranged on the top side and the bottom side of the cavity in the cavity;
a rectangular waveguide is arranged at one side of the cylindrical microwave resonant cavity, and a coupling hole/coupling waveguide is arranged on the side wall of the cylindrical microwave resonant cavity at the joint of the rectangular waveguide and the cylindrical microwave resonant cavity; the rectangular waveguide is connected with the cylindrical microwave resonant cavity through the coupling hole/the coupling waveguide, so that microwave energy is coupled into the cylindrical microwave resonant cavity, and plasma is formed in the cylindrical microwave resonant cavity;
the upper end and the lower end of the A surface of the cylindrical microwave resonant cavity are provided with cylindrical cut-off waveguides, and the cylindrical cut-off waveguides are close to the outer side of the PCVD deposition substrate tube;
the cooling water channels are perpendicular to the A surface of the cylindrical microwave resonant cavity and distributed in a circular matrix along the A surface;
the cooling water channel is communicated with the first cooling water cavity and the second cooling water cavity;
the diameter of the cavity in the cavity is Dc, and Dc is 1/2lambda-2lambda; the length of the cavity in the cavity is Hc, and Hc is 1/2λ - λ; the length of the cylindrical cut-off waveguide is Lc, lc is 1/8λ - λ, λ is the microwave wavelength; the diameter of the cylindrical cut-off waveguide is d1, and d1 is 10 mm-0.7λ; the outer diameter of the PCVD deposition substrate tube is d2, and the difference value between the diameter of the cylindrical cut-off waveguide and the outer diameter of the PCVD deposition substrate tube is 1-15 mm;
the wide side a of the rectangular waveguide is 1/2λ - λ, and the narrow side b is 1/4λ -1/2λ;
when the coupling hole/coupling waveguide is circular, the diameter of the coupling hole/coupling waveguide is d3, and d3 is 1-43 mm.
When the coupling hole/coupling waveguide is rectangular, the length a1 of the coupling hole/coupling waveguide is 1/4λ -1/2λ, and the width b1 of the coupling hole/coupling waveguide is 1/8λ -1/4λ.
The invention provides a microwave resonant cavity for a plasma chemical vapor deposition process, which is provided with a built-in circulating water cooling system, is suitable for working in a high-temperature environment, reduces the dimensional deformation of a cavity, maintains a lower load reflection coefficient, improves the microwave energy utilization rate and obtains the characteristic of high-density plasma. The invention has the beneficial effects that: the cavity of the microwave resonant cavity is internally provided with the circulating water cooling system formed by the first cooling water cavity, the second cooling water cavity and the cooling water channel, so that the requirement of working in a high-temperature environment is met, and the size deformation of the cavity in the cavity at high temperature is reduced;
the coupling hole/coupling waveguide connected with the rectangular waveguide is arranged in the cylindrical microwave resonant cavity at the outer side of the cavity in the cavity body and is used for coupling microwave energy to the cylindrical microwave resonant cavity; in the PCVD deposition process, as the thickness of the quartz tube wall increases, the load reflection coefficient S of the quartz tube wall increases 11 Still maintained at a lower level;
the microwave resonant cavity is provided with the coupling hole/the coupling waveguide, the size of the cylindrical microwave resonant cavity is precisely controlled, the microwave energy forms a stable resonant mode in the cylindrical microwave resonant cavity, the utilization efficiency of the microwave energy is improved, and high-density plasma can be obtained.
Drawings
The present invention is further described below with reference to the accompanying drawings for the convenience of understanding by those skilled in the art.
FIG. 1 is a schematic side view of a microwave cavity for a plasma chemical vapor deposition process;
FIG. 2 is a schematic diagram of a front view of a microwave cavity for a PECVD process;
FIG. 3 is a schematic cross-sectional front view of a microwave cavity for a plasma chemical vapor deposition process;
FIG. 4 is a schematic diagram of a cross-sectional side view of a microwave cavity for a plasma chemical vapor deposition process;
FIG. 5 is a schematic side sectional structure of example 2;
fig. 6 is a schematic front sectional structure of embodiment 2.
Detailed Description
The aim of the invention can be achieved by the following technical scheme:
the microwave resonant cavity for the plasma chemical vapor deposition process, as shown in figures 1-4, comprises a cylindrical microwave resonant cavity 1, wherein a first cooling water cavity 7 and a second cooling water cavity 8 are respectively arranged at two sides of an A surface of the cylindrical microwave resonant cavity 1;
the center of the cylindrical microwave resonant cavity 1 is penetrated by a PCVD deposition substrate tube 5, and the PCVD deposition substrate tube 5 is positioned at the center of the cylindrical microwave resonant cavity 1;
the center of the cylindrical microwave resonant cavity 1 is provided with a cavity body inner cavity 2, the outer side of the cavity body inner cavity 2 is provided with cooling water channels 9, and a plurality of cooling water channels 9 are uniformly distributed in the side wall of the cylindrical microwave resonant cavity 1; the cooling water channel 9 is communicated with a first cooling water cavity 7 and a second cooling water cavity 8 which are respectively arranged on the top side and the bottom side of the cavity 2 in the cavity; the cavity 2 of the microwave resonant cavity is internally provided with the circulating water cooling system formed by the first cooling water cavity 7, the second cooling water cavity 8 and the cooling water channel 9, so that the requirement of working in a high-temperature environment is met, and the size deformation of the cavity 2 in the cavity at a high temperature is reduced;
a rectangular waveguide 10 is arranged on one side of the cylindrical microwave resonant cavity 1, and a coupling hole/coupling waveguide 4 is arranged on the side wall of the cylindrical microwave resonant cavity 1 at the joint of the rectangular waveguide 10 and the cylindrical microwave resonant cavity 1; the rectangular waveguide 10 is connected with the cylindrical microwave resonant cavity 1 through the coupling hole/the coupling waveguide 4, and couples microwave energy into the cylindrical microwave resonant cavity 1, plasma 6 is formed in the cylindrical microwave resonant cavity 1, and the plasma 6 is plasma generated by exciting raw material gas by microwaves; the cylindrical microwave resonant cavity 1 outside the cavity 2 in the cavity is internally provided with a coupling hole/coupling waveguide 4 connected with a rectangular waveguide 10 for coupling microwave energy to the cylindrical microwave resonant cavity 1; in the PCVD deposition process, as the thickness of the quartz tube wall increases, the load reflection coefficient S of the quartz tube wall increases 11 Still maintained at a lower level;
the upper end and the lower end of the A surface of the cylindrical microwave resonant cavity 1 are provided with cylindrical cut-off waveguides 3, and the cylindrical cut-off waveguides 3 are close to the outer side of the PCVD deposition substrate tube 5;
the cooling water channels 9 are perpendicular to the A surface of the cylindrical microwave resonant cavity 1 and distributed in a circular matrix along the A surface;
the cooling water channel 9 is communicated with the first cooling water cavity 7 and the second cooling water cavity 8;
the diameter of the cavity 2 in the cavity is Dc, and Dc is 1/2lambda-2lambda; the length of the cavity 2 in the cavity is Hc, and Hc is 1/2λ - λ; the length of the cylindrical cut-off waveguide 3 is Lc, lc is 1/8λ - λ, λ is the microwave wavelength; the diameter of the cylindrical cut-off waveguide 3 is d1, and d1 is 10 mm-0.7λ; the outer diameter of the PCVD deposition substrate tube 5 is d2, and the difference value between the diameter of the cylindrical cut-off waveguide 3 and the outer diameter of the PCVD deposition substrate tube 5 is 1-15 mm; the microwave resonant cavity is provided with the coupling hole/the coupling waveguide 4, the size of the cylindrical microwave resonant cavity 1 is precisely controlled, and microwave energy forms a stable resonant mode in the cylindrical microwave resonant cavity 1, so that the utilization efficiency of the microwave energy is improved, and high-density plasma can be obtained;
the wide side a of the rectangular waveguide 10 is 1/2λ - λ, and the narrow side b is 1/4λ -1/2λ;
example 1
As shown in fig. 4, a microwave resonant cavity for a plasma chemical vapor deposition process comprises a cylindrical microwave resonant cavity 1, wherein a first cooling water cavity 7 and a second cooling water cavity 8 are respectively arranged on two sides of an a-plane of the cylindrical microwave resonant cavity 1;
the center of the cylindrical microwave resonant cavity 1 is penetrated by a PCVD deposition substrate tube 5, and the PCVD deposition substrate tube 5 is positioned at the center of the cylindrical microwave resonant cavity 1;
the center of the cylindrical microwave resonant cavity 1 is provided with a cavity body inner cavity 2, the outer side of the cavity body inner cavity 2 is provided with cooling water channels 9, and a plurality of cooling water channels 9 are uniformly distributed in the side wall of the cylindrical microwave resonant cavity 1; the cooling water channel 9 is communicated with a first cooling water cavity 7 and a second cooling water cavity 8 which are respectively arranged on the top side and the bottom side of the cavity 2 in the cavity; the cavity 2 of the microwave resonant cavity is internally provided with the circulating water cooling system formed by the first cooling water cavity 7, the second cooling water cavity 8 and the cooling water channel 9, so that the requirement of working in a high-temperature environment is met, and the size deformation of the cavity 2 in the cavity at a high temperature is reduced;
a rectangular waveguide 10 is arranged on one side of the cylindrical microwave resonant cavity 1, and a coupling hole/coupling waveguide 4 is arranged on the side wall of the cylindrical microwave resonant cavity 1 at the joint of the rectangular waveguide 10 and the cylindrical microwave resonant cavity 1; the rectangular waveguide 10 is connected with the cylindrical microwave resonant cavity 1 through the coupling hole/the coupling waveguide 4, and couples microwave energy into the cylindrical microwave resonant cavity 1, plasma 6 is formed in the cylindrical microwave resonant cavity 1, and the plasma 6 is plasma generated by exciting raw material gas by microwaves; the cylindrical microwave resonant cavity 1 outside the cavity 2 in the cavity is internally provided with a coupling hole/coupling waveguide 4 connected with a rectangular waveguide 10 for coupling microwave energy to the cylindrical microwave resonant cavity 1; in the PCVD deposition process, as the thickness of the quartz tube wall increases, the load reflection coefficient S of the quartz tube wall increases 11 Still maintained at a lower level;
the upper end and the lower end of the A surface of the cylindrical microwave resonant cavity 1 are provided with cylindrical cut-off waveguides 3, and the cylindrical cut-off waveguides 3 are close to the outer side of the PCVD deposition substrate tube 5;
the cooling water channels 9 are perpendicular to the A surface of the cylindrical microwave resonant cavity 1 and distributed in a circular matrix along the A surface;
the cooling water channel 9 is communicated with the first cooling water cavity 7 and the second cooling water cavity 8;
the diameter of the cavity 2 in the cavity is Dc, and Dc is 1/2lambda-2lambda; the length of the cavity 2 in the cavity is Hc, and Hc is 1/2λ - λ; the length of the cylindrical cut-off waveguide 3 is Lc, lc is 1/8λ - λ, λ is the microwave wavelength; the diameter of the cylindrical cut-off waveguide 3 is d1, and d1 is 10 mm-0.7λ; the outer diameter of the PCVD deposition substrate tube 5 is d2, and the difference value between the diameter of the cylindrical cut-off waveguide 3 and the outer diameter of the PCVD deposition substrate tube 5 is 1-15 mm; the microwave resonant cavity is provided with the coupling hole/the coupling waveguide 4, the size of the cylindrical microwave resonant cavity 1 is precisely controlled, and microwave energy forms a stable resonant mode in the cylindrical microwave resonant cavity 1, so that the utilization efficiency of the microwave energy is improved, and high-density plasma can be obtained;
the wide side a of the rectangular waveguide 10 is 1/2λ - λ, and the narrow side b is 1/4λ -1/2λ;
when the coupling hole/coupling waveguide 4 is circular, the diameter of the coupling hole/coupling waveguide 4 is d3, and d3 is 1-43 mm.
Example 2
As shown in fig. 5 and 6, a microwave resonant cavity for a plasma chemical vapor deposition process comprises a cylindrical microwave resonant cavity 1, wherein a first cooling water cavity 7 and a second cooling water cavity 8 are respectively arranged at two sides of an A surface of the cylindrical microwave resonant cavity 1;
the center of the cylindrical microwave resonant cavity 1 is penetrated by a PCVD deposition substrate tube 5, and the PCVD deposition substrate tube 5 is positioned at the center of the cylindrical microwave resonant cavity 1;
the center of the cylindrical microwave resonant cavity 1 is provided with a cavity body inner cavity 2, the outer side of the cavity body inner cavity 2 is provided with cooling water channels 9, and a plurality of cooling water channels 9 are uniformly distributed in the side wall of the cylindrical microwave resonant cavity 1; the cooling water channel 9 is communicated with a first cooling water cavity 7 and a second cooling water cavity 8 which are respectively arranged on the top side and the bottom side of the cavity 2 in the cavity; the cavity 2 of the microwave resonant cavity is internally provided with the circulating water cooling system formed by the first cooling water cavity 7, the second cooling water cavity 8 and the cooling water channel 9, so that the requirement of working in a high-temperature environment is met, and the size deformation of the cavity 2 in the cavity at a high temperature is reduced;
a rectangular waveguide 10 is arranged on one side of the cylindrical microwave resonant cavity 1, and a coupling hole/coupling waveguide 4 is arranged on the side wall of the cylindrical microwave resonant cavity 1 at the joint of the rectangular waveguide 10 and the cylindrical microwave resonant cavity 1; the rectangular waveguide 10 is connected with the cylindrical microwave resonant cavity 1 through the coupling hole/the coupling waveguide 4, and couples microwave energy into the cylindrical microwave resonant cavity 1, plasma 6 is formed in the cylindrical microwave resonant cavity 1, and the plasma 6 is plasma generated by exciting raw material gas by microwaves; the cylindrical microwave resonant cavity 1 outside the cavity 2 in the cavity is internally provided with a coupling hole/coupling waveguide 4 connected with a rectangular waveguide 10 for coupling microwave energy to the cylindrical microwave resonant cavity 1; in the PCVD deposition process, as the thickness of the quartz tube wall increases, the load reflection coefficient S of the quartz tube wall increases 11 Still maintained at a lower level;
the upper end and the lower end of the A surface of the cylindrical microwave resonant cavity 1 are provided with cylindrical cut-off waveguides 3, and the cylindrical cut-off waveguides 3 are close to the outer side of the PCVD deposition substrate tube 5;
the cooling water channels 9 are perpendicular to the A surface of the cylindrical microwave resonant cavity 1 and distributed in a circular matrix along the A surface;
the cooling water channel 9 is communicated with the first cooling water cavity 7 and the second cooling water cavity 8;
the diameter of the cavity 2 in the cavity is Dc, and Dc is 1/2lambda-2lambda; the length of the cavity 2 in the cavity is Hc, and Hc is 1/2λ - λ; the length of the cylindrical cut-off waveguide 3 is Lc, lc is 1/8λ - λ, λ is the microwave wavelength; the diameter of the cylindrical cut-off waveguide 3 is d1, and d1 is 10 mm-0.7λ; the outer diameter of the PCVD deposition substrate tube 5 is d2, and the difference value between the diameter of the cylindrical cut-off waveguide 3 and the outer diameter of the PCVD deposition substrate tube 5 is 1-15 mm; the microwave resonant cavity is provided with the coupling hole/the coupling waveguide 4, the size of the cylindrical microwave resonant cavity 1 is precisely controlled, and microwave energy forms a stable resonant mode in the cylindrical microwave resonant cavity 1, so that the utilization efficiency of the microwave energy is improved, and high-density plasma can be obtained;
the wide side a of the rectangular waveguide 10 is 1/2λ - λ, and the narrow side b is 1/4λ -1/2λ;
when the coupling hole/coupling waveguide 4 is rectangular, the length a1 of the coupling hole/coupling waveguide 4 is 1/4λ to 1/2λ, and the width b1 of the coupling hole/coupling waveguide 4 is 1/8λ to 1/4λ.
The working principle of the invention is as follows:
the center of the cylindrical microwave resonant cavity 1 is penetrated by a PCVD deposition substrate tube 5, and the PCVD deposition substrate tube 5 is positioned at the center of the cylindrical microwave resonant cavity 1; the center of the cylindrical microwave resonant cavity 1 is provided with a cavity body inner cavity 2, the outer side of the cavity body inner cavity 2 is provided with cooling water channels 9, and a plurality of cooling water channels 9 are uniformly distributed in the side wall of the cylindrical microwave resonant cavity 1; the cooling water channel 9 is communicated with a first cooling water cavity 7 and a second cooling water cavity 8 which are respectively arranged on the top side and the bottom side of the cavity 2 in the cavity; the cavity 2 of the microwave resonant cavity is internally provided with the circulating water cooling system formed by the first cooling water cavity 7, the second cooling water cavity 8 and the cooling water channel 9, so that the requirement of working in a high-temperature environment is met, and the size deformation of the cavity 2 in the cavity at a high temperature is reduced;
the cylindrical microwave resonant cavity 1 outside the cavity 2 in the cavity is internally provided with a coupling hole/coupling waveguide 4 connected with a rectangular waveguide 10 for coupling microwave energy to the cylindrical microwave resonant cavity 1; in the PCVD deposition process, as the thickness of the quartz tube wall increases, the load reflection coefficient S of the quartz tube wall increases 11 Still maintained at a lower level;
the microwave resonant cavity is provided with the coupling hole/the coupling waveguide 4, the size of the cylindrical microwave resonant cavity 1 is precisely controlled, the microwave energy forms a stable resonant mode in the cylindrical microwave resonant cavity 1, the utilization efficiency of the microwave energy is improved, and high-density plasma can be obtained.
The invention provides a microwave resonant cavity for a plasma chemical vapor deposition process, which is provided with a built-in circulating water cooling system, is suitable for working in a high-temperature environment, reduces the dimensional deformation of a cavity, maintains a lower load reflection coefficient, improves the microwave energy utilization rate and obtains the characteristic of high-density plasma. The invention has the beneficial effects that: the cavity of the microwave resonant cavity is internally provided with the circulating water cooling system formed by the first cooling water cavity, the second cooling water cavity and the cooling water channel, so that the requirement of working in a high-temperature environment is met, and the size deformation of the cavity in the cavity at high temperature is reduced;
the coupling hole/coupling waveguide connected with the rectangular waveguide is arranged in the cylindrical microwave resonant cavity at the outer side of the cavity in the cavity body and is used for coupling microwave energy to the cylindrical microwave resonant cavity; in the PCVD deposition process, as the thickness of the quartz tube wall increases, the load reflection coefficient S of the quartz tube wall increases 11 Still maintained at a lower level;
the microwave resonant cavity is provided with the coupling hole/the coupling waveguide, the size of the cylindrical microwave resonant cavity is precisely controlled, the microwave energy forms a stable resonant mode in the cylindrical microwave resonant cavity, the utilization efficiency of the microwave energy is improved, and high-density plasma can be obtained.
The foregoing is merely illustrative of the structures of this invention and various modifications, additions and substitutions for those skilled in the art can be made to the described embodiments without departing from the scope of the invention or from the scope of the invention as defined in the accompanying claims.
Claims (1)
1. The microwave resonant cavity for the plasma chemical vapor deposition process is characterized by comprising a cylindrical microwave resonant cavity (1), wherein a first cooling water cavity (7) and a second cooling water cavity (8) are respectively arranged on two sides of an A surface of the cylindrical microwave resonant cavity;
the center of the cylindrical microwave resonant cavity (1) is penetrated by a PCVD deposition substrate tube (5), and the PCVD deposition substrate tube (5) is positioned at the center of the cylindrical microwave resonant cavity (1);
the center of the cylindrical microwave resonant cavity (1) is provided with a cavity body inner cavity (2), the outer side of the cavity body inner cavity (2) is provided with cooling water channels (9), and a plurality of cooling water channels (9) are uniformly distributed in the side wall of the cylindrical microwave resonant cavity (1); the cooling water channel (9) is communicated with a first cooling water cavity (7) and a second cooling water cavity (8) which are respectively arranged on the top side and the bottom side of the cavity (2) in the cavity;
a rectangular waveguide (10) is arranged at one side of the cylindrical microwave resonant cavity (1), and a coupling hole/coupling waveguide (4) is arranged on the side wall of the cylindrical microwave resonant cavity (1) at the joint of the rectangular waveguide (10) and the cylindrical microwave resonant cavity (1); the rectangular waveguide (10) is connected with the cylindrical microwave resonant cavity (1) through the coupling hole/the coupling waveguide (4) to couple microwave energy into the cylindrical microwave resonant cavity (1) and form plasma (6) in the cylindrical microwave resonant cavity (1);
the upper end and the lower end of the A surface of the cylindrical microwave resonant cavity (1) are provided with cylindrical cut-off waveguides (3), and the cylindrical cut-off waveguides (3) are close to the outer side of the PCVD deposition substrate tube (5);
the cooling water channels (9) are perpendicular to the A surface of the cylindrical microwave resonant cavity (1) and distributed in a circular matrix along the A surface;
the cooling water channel (9) is communicated with the first cooling water cavity (7) and the second cooling water cavity (8);
the diameter of the cavity (2) in the cavity is Dc, and Dc is 1/2lambda-2lambda; the length of the cavity (2) in the cavity is Hc, and Hc is 1/2λ - λ;
the length of the cylindrical cut-off waveguide (3) is Lc, lc is 1/8λ - λ, and λ is the microwave wavelength; the diameter of the cylindrical cut-off waveguide (3) is d1, and d1 is 10 mm-0.7λ; the outer diameter of the PCVD deposition substrate tube (5) is d2, and the difference value between the diameter of the cylindrical cut-off waveguide (3) and the outer diameter of the PCVD deposition substrate tube (5) is 1-15 mm;
the wide side a of the rectangular waveguide (10) is 1/2λ - λ, and the narrow side b is 1/4λ -1/2λ;
when the coupling hole/coupling waveguide (4) is circular, the diameter of the coupling hole/coupling waveguide (4) is d3, and d3 is 1-43 mm;
when the coupling hole/coupling waveguide (4) is rectangular, the length a1 of the coupling hole/coupling waveguide (4) is 1/4λ -1/2λ, and the width b1 of the coupling hole/coupling waveguide (4) is 1/8λ -1/4λ.
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| CN111542166A (en) * | 2020-05-08 | 2020-08-14 | 烽火通信科技股份有限公司 | Annular microwave plasma resonant cavity |
| CN212783746U (en) * | 2020-07-30 | 2021-03-23 | 烽火通信科技股份有限公司 | Microwave cavity assembly |
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| CN111542166A (en) * | 2020-05-08 | 2020-08-14 | 烽火通信科技股份有限公司 | Annular microwave plasma resonant cavity |
| CN212783746U (en) * | 2020-07-30 | 2021-03-23 | 烽火通信科技股份有限公司 | Microwave cavity assembly |
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