CN114730786A - 发光二极管芯片及其制备方法、显示装置 - Google Patents

发光二极管芯片及其制备方法、显示装置 Download PDF

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Publication number
CN114730786A
CN114730786A CN202080002672.XA CN202080002672A CN114730786A CN 114730786 A CN114730786 A CN 114730786A CN 202080002672 A CN202080002672 A CN 202080002672A CN 114730786 A CN114730786 A CN 114730786A
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China
Prior art keywords
semiconductor
epitaxial structures
electrode
light emitting
epitaxial
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CN202080002672.XA
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Inventor
王明星
童彬彬
张立震
张晨阳
张震
韵夏伟
袁广才
董学
狄沐昕
梁志伟
王珂
曹占锋
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Publication of CN114730786A publication Critical patent/CN114730786A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)

Abstract

一种发光二极管芯片，包括：多个外延结构；至少一个第一电极；以及，多个第二电极。所述多个外延结构中任意相邻的两个外延结构之间具有间隙；每个外延结构包括：依次层叠设置的第一半导体图案、发光图案和第二半导体图案；所述多个外延结构中的至少两个外延结构的第一半导体图案相互连通构成第一半导体层。所述第一电极与所述第一半导体层电连接。每个第二电极与所述多个外延结构中的至少一个外延结构的第二半导体图案电连接。

Description

PCT国内申请，说明书已公开。

Claims (18)

  1. PCT国内申请，权利要求书已公开。
CN202080002672.XA 2020-11-06 2020-11-06 发光二极管芯片及其制备方法、显示装置 Pending CN114730786A (zh)

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PCT/CN2020/127247 WO2022094967A1 (zh) 2020-11-06 2020-11-06 发光二极管芯片及其制备方法、显示装置

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CN114730786A true CN114730786A (zh) 2022-07-08

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Publication number Priority date Publication date Assignee Title
JP4960665B2 (ja) * 2006-08-11 2012-06-27 キヤノン株式会社 発光素子アレイ及び画像形成装置
EP2757598B1 (en) * 2011-09-16 2017-04-26 Seoul Viosys Co., Ltd. Light emitting diode
CN107768487A (zh) * 2016-08-18 2018-03-06 新世纪光电股份有限公司 巨量转移电子元件的方法
CN107994046A (zh) * 2017-11-23 2018-05-04 华灿光电（浙江）有限公司 一种发光二极管芯片阵列、显示面板及其制作方法
WO2019147589A1 (en) * 2018-01-24 2019-08-01 Apple Inc. Micro led based display panel
CN208014703U (zh) * 2018-03-29 2018-10-26 昆山工研院新型平板显示技术中心有限公司 驱动背板、微发光二极管显示面板及显示器
JPWO2020100301A1 (ja) * 2018-11-16 2021-10-07 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法
TWI682436B (zh) * 2018-12-20 2020-01-11 茂丞科技股份有限公司 微型發光二極體巨量轉移的方法及該方法所製作的發光面板組件
CN110416249B (zh) * 2019-08-21 2024-06-07 扬州中科半导体照明有限公司 一种半导体发光器件及其制作方法
CN111106210A (zh) 2019-12-30 2020-05-05 晶能光电（江西）有限公司 Mini LED芯片制备方法
CN111293134B (zh) * 2020-02-06 2024-06-04 厦门大学 一种无需巨量转移的三色Micro/Nano LED阵列及其制作方法
CN211719593U (zh) * 2020-02-06 2020-10-20 厦门大学 无需巨量转移的三色Micro/Nano LED阵列
US20220059740A1 (en) * 2020-08-21 2022-02-24 Facebook Technologies, Llc Enhanced light outcoupling of micro-leds using plasmonic scattering of metallic nanoparticles

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US12021173B2 (en) 2024-06-25
US20220376137A1 (en) 2022-11-24

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