CN114719968B - Terahertz wave heterodyne detector based on orthogonal polarization dual antennas - Google Patents
Terahertz wave heterodyne detector based on orthogonal polarization dual antennas Download PDFInfo
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- CN114719968B CN114719968B CN202110001818.5A CN202110001818A CN114719968B CN 114719968 B CN114719968 B CN 114719968B CN 202110001818 A CN202110001818 A CN 202110001818A CN 114719968 B CN114719968 B CN 114719968B
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- 230000010287 polarization Effects 0.000 title claims abstract description 59
- 230000009977 dual effect Effects 0.000 title claims abstract description 38
- 230000005669 field effect Effects 0.000 claims abstract description 232
- 238000001514 detection method Methods 0.000 claims abstract description 37
- 230000010355 oscillation Effects 0.000 claims abstract description 28
- 230000005540 biological transmission Effects 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000002955 isolation Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 16
- 239000000523 sample Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/52—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/24—Polarising devices; Polarisation filters
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- Spectroscopy & Molecular Physics (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
Abstract
The invention relates to the technical field of terahertz wave detection, in particular to a terahertz wave heterodyne detector based on orthogonal polarization dual antennas. Comprising the following steps: two antennas, a matching network and a field effect transistor, wherein: the polarization directions of the first antenna and the second antenna are perpendicular to each other, the first antenna and the second antenna respectively lead out two feed ports, the two feed ports of the first antenna are respectively connected with the source electrodes of the first field effect transistor and the second field effect transistor through the first matching network and the second matching network, the two feed ports of the second antenna are respectively connected with the grid electrodes of the first field effect transistor and the second field effect transistor through the third matching network and the fourth matching network, and the drain electrodes of the first field effect transistor and the drain electrodes of the second field effect transistor are connected and output detection signals. According to the invention, the local oscillation signal and the terahertz wave signal are respectively received by adopting the mode of orthogonal polarization dual antennas, so that the isolation of the local oscillation signal and the terahertz wave signal can be effectively improved.
Description
Technical Field
The invention relates to the technical field of terahertz wave detection, in particular to a terahertz wave heterodyne detector based on orthogonal polarization dual antennas.
Background
Terahertz waves generally refer to electromagnetic waves with the frequency of 0.1-10THz, have a plurality of unique characteristics, have low photon energy, and do not generate harmful ionization on biological tissues; the terahertz wave and the vibration of a plurality of biological macromolecules are in the same frequency, so that a corresponding terahertz wave fingerprint spectrum is formed; terahertz waves have a shorter wavelength than millimeter waves, and thus terahertz wave imaging has a higher spatial resolution. It is these characteristics of terahertz wave that make it have wide application prospect.
Terahertz wave detectors are core devices in the above applications, and because of the characteristics of small volume, easy large-scale integration, low cost, etc., complementary Metal Oxide Semiconductor (CMOS) processes, terahertz wave detectors based on CMOS processes have been widely studied in recent years. Compared with direct detection, heterodyne detection has the advantages of high signal-to-noise ratio, no need of modulating terahertz signals, and suitability for weak signal detection.
At present, most internationally existing terahertz wave detectors based on field effect transistors adopt an antenna structure to simultaneously receive terahertz wave signals and local oscillation signals, so that the isolation degree of the terahertz wave signals and the local oscillation signals is poor. According to the invention, the local oscillation signal and the terahertz wave signal are respectively received by adopting the mode of orthogonal polarization dual antennas, so that the isolation of the local oscillation signal and the terahertz wave signal can be effectively improved. In practical application, the polarization directions of the local oscillation signal and the terahertz wave signal are orthogonal and are matched with the metal wire grid polaroid for use, so that the signal-to-noise ratio of a practical application system can be improved.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a terahertz wave detector for heterodyne detection, which can be realized on a CMOS manufacturing process, wherein two antennas with mutually perpendicular polarizations are adopted to respectively receive terahertz wave signals and local oscillation signals.
The technical scheme adopted by the invention for achieving the purpose is as follows:
a terahertz wave heterodyne detector based on orthogonally polarized dual antennas, comprising: two antennas, a matching network and a field effect transistor, wherein:
the two antennas are respectively used for receiving terahertz wave signals and local oscillation signals, and the field effect transistor is used for outputting detection signals;
The polarization directions of the first antenna and the second antenna are perpendicular to each other, the first antenna and the second antenna respectively lead out two feed ports, the two feed ports of the first antenna are respectively connected with the source electrodes of the first field effect transistor and the second field effect transistor through the first matching network and the second matching network, the two feed ports of the second antenna are respectively connected with the grid electrodes of the first field effect transistor and the second field effect transistor through the third matching network and the fourth matching network, and the drain electrodes of the first field effect transistor and the drain electrodes of the second field effect transistor are connected and output detection signals.
The drain electrode of the first field effect transistor is connected with the drain electrode of the second field effect transistor and is connected with a load, and the drain electrode of the first field effect transistor is connected with the drain electrode of the second field effect transistor and outputs a detection signal.
One or more detection circuits connected in series are connected between the drain electrode of the first field effect transistor or the drain electrode of the second field effect transistor and the load.
The detection circuit is composed of two field effect transistors, wherein: the source electrode of the third field effect transistor and the source electrode of the fourth field effect transistor are used as input ends of the detection circuit together, the drain electrode of the third field effect transistor and the drain electrode of the fourth field effect transistor are used as output ends of the detection circuit together and used for outputting detection signals, and the grid electrode of the third field effect transistor and the grid electrode of the fourth field effect transistor are connected with external bias voltages.
The overload is composed of a plurality of field effect transistors connected in series, wherein sources and drains of adjacent field effect transistors are connected, and gates of all the field effect transistors are connected with external bias voltage.
The load is composed of a plurality of field effect tube units which are connected in series, wherein each field effect tube unit is composed of two field effect tubes, sources of the two field effect tubes are connected to serve as input ends of the field effect tube units, drains of the two field effect tubes are connected to serve as output ends of the field effect tube units, and grids of all the field effect tubes are connected to external bias voltage.
The antenna is one or any two of a slot antenna, a patch antenna, a microstrip antenna, a horn antenna, a dipole antenna, a loop antenna, a butterfly antenna and a log periodic antenna.
The matching network is any one of a single transmission line segment, a parallel stub, a series stub, a double stub, a coplanar waveguide or a spiral inductor.
The load is any one of a resistor, an inductor and a current source.
The field effect transistor is any one of a metal-oxide-semiconductor field effect transistor, a junction field effect transistor or a heterojunction field effect transistor.
The invention has the following beneficial effects and advantages:
1. According to the invention, the local oscillation signal and the terahertz wave signal are respectively received by adopting the mode of orthogonal polarization dual antennas, so that the isolation of the local oscillation signal and the terahertz wave signal can be effectively improved.
2. In practical application, the polarization directions of the local oscillation signal and the terahertz wave signal are orthogonal and are matched with the metal wire grid polaroid for use, so that the signal-to-noise ratio of a practical application system can be improved.
Drawings
FIG. 1 is a schematic diagram of an embodiment 1 of a terahertz heterodyne detector based on an orthogonally polarized dual antenna and a field effect transistor;
FIG. 2 is a schematic diagram of an embodiment 2 of a terahertz heterodyne detector based on an orthogonally polarized dual antenna and a field effect transistor;
FIG. 3 is a schematic diagram of an embodiment 3 of a terahertz heterodyne detector based on an orthogonally polarized dual antenna and a field effect transistor;
FIG. 4 is a schematic diagram of an embodiment 4 of a terahertz heterodyne detector based on an orthogonally polarized dual antenna and a field effect transistor;
FIG. 5 is a schematic diagram of an embodiment 5 of a terahertz heterodyne detector based on an orthogonally polarized dual antenna and a field effect transistor;
FIG. 6 is a schematic diagram of an embodiment 6 of a terahertz heterodyne detector based on an orthogonally polarized dual antenna and a field effect transistor;
FIG. 7 is a schematic diagram of an embodiment 1 of a cascode current source configuration for a load of the present invention using field effect transistors;
FIG. 8 is a schematic diagram of an embodiment 2 of a cascode current source configuration for a load of the present invention using field effect transistors;
Wherein 1 and 2 are antennas; 3 and 4 are matching networks; 5 is a field effect transistor; a drain electrode of 5; 7 and 8 are antennas; 9 and 10 are matching networks; 11 is a field effect transistor; 12 is the drain of 11; 13 is a load; a port 14 is 13; 15 and 16 are antennas; 17 and 18 are matching networks; 19 and 20 are field effect transistors; a gate of 21 is 20; 22 is the drain of 21; 23 is a load; 24 is a port of 23; 25 is an antenna; 26 and 27 are matching networks; 28 and 29 are field effect transistors; 30 is an antenna; 31 and 32 are matching networks; 33 are the drain connections of 28 and 29; 34 is an antenna; 35 and 36 are matching networks; 37 and 38 are field effect transistors; 39 is an antenna; 40 and 41 are matching networks; 42 is the junction of 37 and 48 drains; 43 is the load; 44 is a port of 43; 45 is an antenna; 46 and 47 are matching networks; 48. 49, 50 and 51 are field effect transistors; 52 is an antenna; 53 and 54 are matching networks; a gate of 55 is 50; a gate of 56 is 51; 57 is the drain junction of 50 and 51; 58 is the load; a port 59 of 58; 60 and 61 are field effect transistors; a gate 62 of 60; a gate electrode 63 of 61; 64. 65, 66 and 67 are field effect transistors; a gate of 64; a gate of 69 65; a gate of 70 is 66; 71 is the gate of 67.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples.
The invention discloses a terahertz wave heterodyne detector based on an orthogonal polarization dual antenna and a field effect transistor, which comprises two antennas with mutually perpendicular polarization directions, a matching network and the field effect transistor. The two antennas with mutually perpendicular polarization directions are respectively used for receiving terahertz wave signals and local oscillation signals, and the field effect transistor is used as a mixer for outputting detection signals.
A terahertz wave heterodyne detector based on orthogonal polarization dual antennas and field effect transistors is characterized in that: the antenna comprises two antennas with mutually perpendicular polarization directions, a matching network and a field effect transistor; the two antennas with mutually perpendicular polarization directions are respectively used for receiving terahertz wave signals and local oscillation signals, and the field effect transistor is used for outputting detection signals; the polarization directions of the antennas (1) and (2) are perpendicular to each other, one feed port is led out of each of the antennas (1) and (2), the feed port is connected with the grid electrode and the source electrode of the field effect transistor (5) through the matching networks (3) and (4) respectively, the drain electrode (6) of the field effect transistor is in an open circuit state and outputs a detection signal, and the source electrode and the grid electrode of the field effect transistor are connected with external bias voltages respectively.
A terahertz wave heterodyne detector based on orthogonal polarization dual antennas and field effect transistors comprises two antennas with mutually perpendicular polarization directions, a matching network and a field effect transistor; the two antennas with mutually perpendicular polarization directions are respectively used for receiving terahertz wave signals and local oscillation signals, and the field effect transistor is used for outputting detection signals; the polarization directions of the antennas (7) and (8) are perpendicular to each other, one feed port is led out of each of the antennas (7) and (8), the feed port is connected with the grid electrode and the source electrode of the field effect transistor (11) through the matching networks (9) and (10) respectively, the drain electrode (12) of the field effect transistor outputs detection signals, the drain electrode (12) of the field effect transistor is connected with the load (13), the source electrode and the grid electrode of the field effect transistor are connected with external bias voltages respectively, and the other end (14) of the load (13) is also connected with the external bias voltages.
A terahertz wave heterodyne detector based on orthogonal polarization dual antennas and field effect transistors comprises two antennas with mutually perpendicular polarization directions, a matching network and a field effect transistor; the two antennas with mutually perpendicular polarization directions are respectively used for receiving terahertz wave signals and local oscillation signals, and the field effect transistor is used for outputting detection signals; the polarization directions of the antennas (15) and (16) are perpendicular to each other, one feed port is led out of each of the antennas (15) and (17), the feed port is connected with the grid electrode and the source electrode of the field effect transistor (19) through the matching networks (17) and (18), the field effect transistor (19) is connected with one or more field effect transistors in series, the drain electrode of the field effect transistor (20) is connected with the load (23), the detection signal is output at the drain electrode (22) of the field effect transistor (20), and the source electrode and the grid electrode of the field effect transistor (19), the grid electrode of the field effect transistor (20) and the other end (24) of the load (23) are respectively connected with external bias voltages.
A terahertz wave heterodyne detector based on orthogonal polarization dual antennas and field effect transistors comprises two antennas with mutually perpendicular polarization directions, a matching network and a field effect transistor; the two antennas with mutually perpendicular polarization directions are respectively used for receiving terahertz wave signals and local oscillation signals, and the field effect transistor is used for outputting detection signals; the polarization directions of the antennas (25) and (30) are perpendicular to each other, two feed ports are led out of the antennas (25) and (30), the two feed ports of the antennas (25) are connected with the sources of the field effect transistors (28) and (29) through the matching networks (26) and (27), the two feed ports of the antennas (30) are connected with the grids of the field effect transistors (28) and (29) through the matching networks (31) and (32), the drains of the field effect transistors (28) and (29) are connected and output detection signals, and the sources and the grids of the field effect transistors (28) and (29) are connected with external bias voltages.
A terahertz wave heterodyne detector based on orthogonal polarization dual antennas and field effect transistors comprises two antennas with mutually perpendicular polarization directions, a matching network and a field effect transistor; the two antennas with mutually perpendicular polarization directions are respectively used for receiving terahertz wave signals and local oscillation signals, and the field effect transistor is used for outputting detection signals; the polarization directions of the antennas (34) and (39) are perpendicular to each other, the two feed ports are led out of the antennas (34) and (39), the two feed ports of the antennas (34) are respectively connected with the sources of the field effect transistors (37) and (38) through the matching networks (35) and (36), the two feed ports of the antennas (39) are respectively connected with the grids of the field effect transistors (37) and (38) through the matching networks (40) and (41), the drains of the field effect transistors (37) and (38) are connected with the detection signal (42), the detection signal (42) is output at the position (42), the source and the grid of the field effect transistor (37), the source and the grid of the field effect transistor (38) and the other end (44) of the load (43) are respectively connected with external bias voltages.
A terahertz wave heterodyne detector based on orthogonal polarization dual antennas and field effect transistors comprises two antennas with mutually perpendicular polarization directions, a matching network and a field effect transistor; the two antennas with mutually perpendicular polarization directions are respectively used for receiving terahertz wave signals and local oscillation signals, and the field effect transistor is used for outputting detection signals; the polarization directions of the antennas (45) and (52) are perpendicular to each other, the two feed ports of the antennas (45) and (52) are led out, the two feed ports of the antennas (45) are respectively connected with the sources of the field effect transistors (48) and (49) through the matching networks (46) and (47), the two feed ports of the antennas (52) are respectively connected with the grids of the field effect transistors (48) and (49) through the matching networks (53) and (54), the field effect transistors (48) and (49) are respectively connected with one or more field effect transistors in series, the drains of the field effect transistors (50) and (51) are connected with a load (57), the load (58) is connected at the position (57), and a detection signal is output at the position (57), and the sources and the grids of the field effect transistors (48), the gates of the field effect transistors (49), the gates of the field effect transistors (50), the gates of the load (58) and the other end (59) of the load (58) are respectively connected with external bias voltages.
The two antennas with mutually perpendicular polarization directions are one or any two of a slot antenna, a patch antenna (microstrip antenna), a horn antenna, a dipole antenna, a loop antenna, a butterfly antenna and a log-periodic antenna.
The matching network is one of a single transmission line segment, a parallel stub, a series stub, a double stub, a coplanar waveguide or a spiral inductor.
The load is one of a resistor, an inductor, a current source or a cascode current source formed by adopting a field effect transistor.
The cascode current source formed by the field effect transistors consists of two or more field effect transistors; the source electrode of the field effect transistor (60) is connected with the output ends (12) (22) (42) (57), the field effect transistor (60) is connected with one or more field effect transistors in series, and the grid electrode of the field effect transistor (60) and the grid electrode and the drain electrode of the field effect transistor (61) are respectively connected with external bias voltages.
The cascode current source formed by the field effect transistors consists of four or more field effect transistors; the sources of the field effect transistors (64) and (65) are connected and connected with the output ends (12) (22) (42) (57), the field effect transistors (64) and (65) are respectively connected with one or more field effect transistors in series, the drains of the field effect transistors (66) and (67) are connected and connected with the drains of the field effect transistors (14) (24) (44) (59), the grid of the field effect transistor (64), the grid of the field effect transistor (65), the grid of the field effect transistor (66), the grid of the field effect transistor (67) and the junction (14) (24) (59) of the field effect transistor (66) and the drain of the field effect transistor (67) are respectively connected with external bias voltages.
The field effect transistor is one of a metal-oxide-semiconductor field effect transistor, a junction field effect transistor or a heterojunction field effect transistor.
Fig. 1 is a schematic diagram of an embodiment 1 of a terahertz heterodyne detector based on an orthogonal polarized dual antenna and a field effect transistor according to the present invention. The polarization directions of the antenna 1 and the antenna 2 are mutually perpendicular and are used for receiving local oscillation signals and terahertz radio frequency signals, one antenna is used for receiving the local oscillation signals, the other antenna is used for receiving the terahertz radio frequency signals, and the two antennas are interchangeable. The two antennas with mutually perpendicular polarization directions are one or two of slot antennas, patch antennas (microstrip antennas), horn antennas, dipole antennas, loop antennas, butterfly antennas and log-periodic antennas. The antenna 1 and the antenna 2 respectively lead out one feed end, and for the antennas with double-port feed such as a loop antenna, a dipole antenna or a butterfly antenna, the antennas can be converted into single-port feed through balun or one port is grounded, and the other port is used as the feed end. The antennas 1 and 2 are connected to the gate and source of a field effect transistor 5 via matching networks 3 and 4, respectively. The matching networks 3 and 4 function to transmit the terahertz wave signal received by the antenna to the field effect transistor 5 maximally. The matching network may be one of a single transmission line segment, a parallel stub, a series stub, a double stub, or a spiral inductance. The field effect transistor 5 functions as a terahertz mixer, the drain of which is in an open state and outputs an intermediate frequency signal. The gate and source of the field effect transistor 5 are connected to an external bias voltage to make the field effect transistor work in a proper state, and the external bias voltage can be connected through an antenna or through a transmission line, and the characteristic of the transmission line needs to form high impedance for terahertz signals.
Fig. 2 is a schematic diagram of an embodiment 2 of a terahertz heterodyne detector based on an orthogonal polarized dual antenna and a field effect transistor according to the present invention. Embodiment 2 is similar to the overall structure of embodiment 1 in that only a load is connected to the drain of the field effect transistor to provide a suitable bias voltage to the drain of the field effect transistor, so that the dc operating state of the field effect transistor is different from that of embodiment 1. The load may be one of a resistor, an inductor, a current source, or a cascode current source formed with field effect transistors.
Fig. 3 is a schematic diagram of an embodiment 3 of a terahertz heterodyne detector based on an orthogonal polarized dual antenna and a field effect transistor according to the present invention. Similar to embodiment 1 and embodiment 2, the polarization directions of the antenna 15 and the antenna 16 are perpendicular to each other, for receiving the local oscillation signal and the terahertz radio frequency signal, wherein one antenna is used for receiving the local oscillation signal, and the other antenna is used for receiving the terahertz radio frequency signal, and the two antennas are interchangeable. The two antennas with mutually perpendicular polarization directions are one or two of slot antennas, patch antennas (microstrip antennas), horn antennas, dipole antennas, loop antennas, butterfly antennas and log-periodic antennas. The antennas 15 and 16 respectively lead out one feed end, and for antennas with dual-port feed such as loop antennas, dipole antennas or butterfly antennas, one port can be converted into single-port feed via balun or one port is grounded, and the other port is used as a feed end. The antenna 15 and the antenna 16 are connected to the gate and the source of the field effect transistor 19 via matching networks 17 and 18, respectively. The matching network functions to transmit the terahertz wave signal received by the antenna to the field effect transistor 19 to the maximum. The matching network may be one of a single transmission line segment, a parallel stub, a series stub, a double stub, or a spiral inductance. The field effect transistor 19 is connected to one or more field effect transistors to increase the impedance value of the overall probe structure, and an intermediate frequency probe signal is output at the drain of the field effect transistor 20. The purpose of the load 23 is to provide a suitable voltage bias point for the field effect transistor to operate in a suitable state. The load may be one of a resistor, an inductor, a current source, or a cascode current source formed with field effect transistors. The source and gate of the fet 19 are externally biased with appropriate voltages to enable the fet to operate in an appropriate state, either by connecting the external bias via an antenna or by connecting the external bias via a transmission line that is characterized by a high impedance to terahertz signals.
Fig. 4 is a schematic diagram of an embodiment 4 of a terahertz heterodyne detector based on an orthogonal polarized dual antenna and a field effect transistor according to the present invention. The polarization directions of the antenna 25 and the antenna 30 are perpendicular to each other, and are used for receiving the local oscillation signal and the terahertz radio frequency signal, wherein one antenna is used for receiving the local oscillation signal, and the other antenna is used for receiving the terahertz radio frequency signal, and the two antennas are interchangeable. The two antennas with mutually perpendicular polarization directions are one or two of slot antennas, patch antennas (microstrip antennas), horn antennas, dipole antennas, loop antennas, butterfly antennas and log-periodic antennas. The two feed ends are led out of the antenna 25 and the antenna 30, respectively, and the antenna with single-port feed such as a horn antenna can be converted into double-port feed via balun. The two feed terminals of the antenna 25 are connected to the sources of field effect transistors 28 and 29 via matching networks 26 and 27, respectively. The two feed terminals of the antenna 30 are connected to the gates of the field effect transistors 28 and 29 via matching networks 31 and 32, respectively. The matching network is used for transmitting the terahertz wave signals received by the antenna to the field effect transistor in a maximized mode. The matching network may be one of a single transmission line segment, a parallel stub, a series stub, a double stub, or a spiral inductance. The field effect transistors 28 and 29 serve as terahertz mixers, and the drains of the field effect transistors 28 and 29 are connected and output intermediate frequency signals. The gates and sources of the field effect transistors 28 and 29 are connected to an external bias voltage to enable the field effect transistors to operate in a proper state, and the external bias voltage may be connected through an antenna or through a transmission line, which is characterized by forming a high impedance for terahertz signals.
Fig. 5 is a schematic diagram of an embodiment 5 of a terahertz heterodyne detector based on an orthogonal polarized dual antenna and a field effect transistor according to the present invention. Embodiment 5 is similar to the overall structure of embodiment 4 in that a load is connected only to the drain of the field effect transistor to provide a suitable bias voltage to the drain of the field effect transistor, so that the dc operating state of the field effect transistor is different from that of embodiment 4. The load may be one of a resistor, an inductor, a current source, or a cascode current source formed with field effect transistors.
Fig. 6 is a schematic diagram of an embodiment 6 of a terahertz heterodyne detector based on an orthogonal polarized dual antenna and a field effect transistor according to the present invention. The polarization directions of the antenna 45 and the antenna 52 are perpendicular to each other, and are used for receiving the local oscillation signal and the terahertz radio frequency signal, wherein one antenna is used for receiving the local oscillation signal, and the other antenna is used for receiving the terahertz radio frequency signal, and the two antennas are interchangeable. The two antennas with mutually perpendicular polarization directions are one or two of slot antennas, patch antennas (microstrip antennas), horn antennas, dipole antennas, loop antennas, butterfly antennas and log-periodic antennas. The two feed ends are led out from the antenna 45 and the antenna 52, respectively, and the antenna with single-port feed such as a horn antenna can be converted into double-port feed via balun. The two feed terminals of the antenna 45 are connected to the sources of field effect transistors 48 and 49 via matching networks 46 and 47, respectively. The two feed terminals led out from the antenna 52 are connected to the gates of the field effect transistors 48 and 49 via matching networks 53 and 54, respectively. The matching network is used for transmitting the terahertz wave signals received by the antenna to the field effect transistor in a maximized mode. The matching network may be one of a single transmission line segment, a parallel stub, a series stub, a double stub, or a spiral inductance. The field effect transistors 48 and 49 are connected to one or more field effect transistors, respectively, to increase the impedance of the overall probe structure, the drains of the field effect transistors 50 and 51 are connected to 57, and the probe signal is output at 57. The purpose of the load 58 is to provide a suitable voltage bias point for the field effect transistor to operate in a suitable state. The load may be one of a resistor, an inductor, a current source, or a cascode current source formed with field effect transistors. For the detector to function properly, the sources and gates of the field effect transistors 48 and 49 need to be biased at reasonable dc voltages, either by connecting the external bias through an antenna or by connecting the external bias through a transmission line that is characterized by the need to form a high impedance for terahertz signals. The gates of field effect transistors 50 and 51 are connected to an external bias voltage to operate the field effect transistors in a proper state.
As previously described, the load may be one of a resistor, an inductor, a current source, or a cascode current source formed with field effect transistors. When the load is a cascode current source formed by using field effect transistors, there are two embodiments:
Fig. 7 is a schematic diagram of an embodiment 1 of a load of the present invention using a fet to form a cascode current source structure. The source of the field effect transistor 60 is connected to the output terminals (12) (22) (42) (57), the gate of the field effect transistor 60 is connected in series with one or several field effect transistors 60, and the gate and drain of the field effect transistor 61 are respectively connected to an external bias voltage.
Fig. 8 is a schematic diagram of an embodiment 2 of a load of the present invention using a fet to form a cascode current source structure. It is composed of four or more field effect transistors; the sources of the field effect transistors 64 and 65 are connected to the output terminals (12) (22) (42) (57), the drains of the field effect transistors 66 and 67 are connected to each other in series with one or more field effect transistors (14) (24) (44) (59), the gates of the field effect transistors 64, 65, 66, 67 and 66 and 67 drain junctions (14) (24) (44) (59) are connected to an external bias voltage, respectively.
The field effect transistor is one of a metal-oxide-semiconductor field effect transistor, a junction field effect transistor or a heterojunction field effect transistor.
Claims (10)
1. The terahertz wave heterodyne detector based on the orthogonal polarization dual antennas is characterized by comprising: two antennas, a matching network and a field effect transistor, wherein:
the two antennas are respectively used for receiving terahertz wave signals and local oscillation signals, and the field effect transistor is used for outputting detection signals;
The polarization directions of the first antenna (25) and the second antenna (30) are perpendicular to each other, two feed ports are respectively led out from the first antenna (25) and the second antenna (30), the two feed ports of the first antenna (25) are respectively connected with the sources of the first field effect transistor (28) and the second field effect transistor (29) through the first matching network (26) and the second matching network (27), the two feed ports of the second antenna (30) are respectively connected with the gates of the first field effect transistor (28) and the second field effect transistor (29) through the third matching network (31) and the fourth matching network (32), and the drains of the first field effect transistor (28) and the drains of the second field effect transistor (29) are connected and output detection signals.
2. The terahertz wave heterodyne detector based on the orthogonal polarization dual antenna according to claim 1, characterized in that the drain of the first field effect transistor (28) and the drain of the second field effect transistor (29) are connected and are connected to a load (43), and the drain of the first field effect transistor (28) and the drain of the second field effect transistor (29) are connected and output a detection signal.
3. Terahertz wave heterodyne detector based on orthogonal polarization dual antennas according to claim 2, characterized in that one or more series connected detection circuits are connected between the drain of the first field effect transistor (28) or the drain of the second field effect transistor (29) and the load (43).
4. The terahertz wave heterodyne detector based on the orthogonal polarization dual antennas according to claim 3, wherein the detection circuit is composed of two field effect transistors, wherein: the source electrode of the third field effect transistor (50) and the source electrode of the fourth field effect transistor (51) are used as input ends of the detection circuit together, the drain electrode of the third field effect transistor (50) and the drain electrode of the fourth field effect transistor (51) are used as output ends of the detection circuit together and used for outputting detection signals, and the grid electrode of the third field effect transistor (50) and the grid electrode of the fourth field effect transistor (51) are connected with external bias voltages.
5. The terahertz wave heterodyne detector based on the orthogonal polarization dual antenna according to claim 2, wherein the load (43) is composed of a plurality of field effect transistors connected in series, wherein sources and drains of adjacent field effect transistors are connected, and gates of all field effect transistors are connected with an external bias voltage.
6. The terahertz wave heterodyne detector based on the orthogonal polarization dual antenna according to claim 2, wherein the load (43) is composed of a plurality of field effect tube units connected in series, wherein the field effect tube units are composed of two field effect tubes, sources of the two field effect tubes are connected as input ends of the field effect tube units, drains of the two field effect tubes are connected as output ends of the field effect tube units, and gates of all the field effect tubes are connected with external bias voltages.
7. The terahertz wave heterodyne detector based on the orthogonal polarization dual antennas according to claim 1, wherein the antennas are one or any two of slot antennas, patch antennas, microstrip antennas, horn antennas, dipole antennas, loop antennas, butterfly antennas and log-periodic antennas.
8. The terahertz wave heterodyne detector based on the orthogonal polarization dual antennas according to claim 1, wherein the matching network is any one of a single transmission line segment, a parallel stub, a series stub, a dual stub, a coplanar waveguide, or a spiral inductor.
9. The terahertz wave heterodyne detector based on the orthogonal polarization dual antennas according to claim 2, wherein the load is any one of a resistor, an inductor and a current source.
10. The terahertz wave heterodyne detector based on the orthogonal polarization dual antenna according to claim 1, wherein the field effect transistor is any one of a metal-oxide-semiconductor field effect transistor, a junction field effect transistor, or a heterojunction field effect transistor.
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