CN114717535B - Method for preparing wurtzite InGaN nanorods on silicon substrate - Google Patents
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract
The invention belongs to the technical field of InGaN nanorod preparation, and provides a method for preparing wurtzite InGaN nanorod on a silicon substrate. Ammoniating the surface of the silicon substrate by ammonia gas, forming Si-N bonds on the treated silicon surface, and saturating Si dangling bonds on the silicon surface; gaCl3 and InCl3 are conveyed into a reaction chamber In which a silicon substrate is placed by N2, the GaCl3 and the InCl3 are heated, ga and In liquid drops are formed on the surface of the substrate under the actions of thermal decomposition and hydrogen reduction of the GaCl3 and the InCl3 In a gas phase, the liquid drops accumulate and nucleate, and finally react with NH3 In the gas phase to generate wurtzite InGaN. The application of the GaN-based material In the fields of photoelectric devices, photovoltaic cells, carbon neutralization and the like is expanded, and more selectivity is brought by the InGaN with the adjustable In component; has important significance for solving the problems of complex growth process, difficult In doping, non-uniformity and the like of the conventional InGaN material.
Description
Technical Field
The invention belongs to the technical field of preparation of InGaN thin film devices, and particularly relates to a method for preparing wurtzite InGaN nanorods on a silicon substrate.
Background
In x Ga 1-x N is an alloy formed by GaN and InN, and no natural InGaN crystal exists in nature, so that the alloy can be obtained through artificial synthesis. The InGaN crystals studied at present are mainly of wurtzite structure, sphalerite structure and sodium chloride structure. Wurtzite is a thermodynamically stable structure, whereas sphalerite is a thermodynamically metastable structure that can only be obtained under specific growth conditions. The last sodium chloride structure, with four times rotational symmetry, is only obtainable under extremely high pressure conditions. In at normal temperature and pressure x Ga 1-x The crystal structure of the N material exists mainly in the form of wurtzite structure. The silicon substrate has the advantages of low cost, easy processing, good conductivity, good thermal stability and the like, so the silicon substrate is suitable for industrial production of In x Ga 1- x For N material photoelectric devices, the growth of wurtzite structure InGaN crystals on silicon substrates can reduce the economic cost and ensure good crystal quality while mass production is performed.
InGaN is the most attractive candidate material in the fields of Light Emitting Diodes (LEDs), lasers, photovoltaic cells, solar PEC (PEC) water decomposition and the like due to the characteristics of capability of realizing band gap adjustability from ultraviolet to infrared, excellent chemical stability, high-efficiency field emission performance and the like of InGaN. However, in all types of devices made of InGaN, the Quantum Efficiency (QE) and the photoluminescence efficiency (PL) thereof decrease rapidly with increasing indium composition, and the decrease in efficiency of various types of devices is related to the generation of stress strain in the material, and the problems such as the existence of miscible interstitial phase, lack of lattice matched substrate, and the like complicate the growth of single crystal, high indium composition, low dislocation density InGaN materials.
In 1991, n.yoshimoto grown InGaN single crystal thin films on sapphire substrates using metal organic vapor phase epitaxy (MOCVD) technique, and photoluminescence was first observed; but has the problems of carbon pollution, high process cost and the like. In 2012, peidong Yang deposited InGaN nanowires on a silicon wire array by adopting a Halide Chemical Vapor Deposition (HCVD) method to prepare three-dimensional multilayer-structured InGaN nanowires; the process cost is greatly reduced, but the problems of less In doping amount, no obvious photoluminescence signals and the like exist. Furthermore, peidong Yang will GaCl 3 And InCl 3 Putting into different quartz tubes, and directly combining the surface of the substrate with NH 3 The problems of low nucleation density of InGaN on the substrate, uneven In component, obvious component gradient difference and the like are easily caused by air flow contact.
Disclosure of Invention
The invention provides a method for preparing wurtzite InGaN nanorods on a silicon substrate to solve the defects in the technology.
The invention is realized by the following technical scheme: a method for preparing wurtzite InGaN nanorods on a silicon substrate comprises the steps of ammoniating the surface of the silicon substrate with ammonia gas, forming Si-N bonds on the treated silicon surface, and saturating Si dangling bonds on the silicon surface; then, gaCl3 and InCl3 are conveyed into a reaction chamber In which a silicon substrate is placed In an N2 mode, the GaCl3 and the InCl3 are heated, ga and In liquid drops are formed on the surface of the substrate under the actions of thermal decomposition and hydrogen reduction of the GaCl3 and the InCl3 In a gas phase, the liquid drops accumulate and nucleate, and finally, the liquid drops react with NH3 In the gas phase to generate wurtzite InGaN.
The method comprises the following specific steps:
(1) And (3) equipment installation: placing a silicon substrate into a reaction zone of a tubular furnace; three small quartz inner tubes with the diameter of 20mm are placed in a quartz outer tube with the diameter of 80mm, two small quartz inner tubes are arranged at the upper part, one small quartz inner tube is arranged at the lower part, and N2 and NH3 are respectively transmitted into the quartz outer tube by the two small quartz inner tubes at the upper part; gaCl is placed in the inner tube of the lower quartz 3 And InCl 3 Introducing N 2 As InCl 3 And GaCl 3 Is a carrier gas for (a); 400-600sccmN before reaction 2 For washing and diluting the reactants, the reaction being carried out at atmospheric pressure;
(2) Ammoniating the silicon substrate: ammoniation treatment of silicon substrate under atmospheric pressure, and introducing 1000-1500sccmNH when the temperature of the reaction area is raised to 350 DEG C 3 Maintaining for 15min-25min; forming Si-N bonds on the surface of the treated silicon;
(3) Growing InGaN nanorods: NH (NH) 3 The flow rate is unchanged; adjusting the flow rate of N2 carrier gas to 250-1000sccm; controlling the temperature of the reaction zone to 550-650 ℃ and heating the InCl 3 Heating GaCl to 380-420 DEG C 3 The temperature is 70-90 ℃ and the growth time is 20-40min.
The length of the small quartz inner tube at the upper part is 100mm; the length of the lower quartz inner tube is 1700mm.
The practicality and the economy of the devices such as the photoelectrodes in the LED photoelectric device, the field emitter and the solar PEC water splitting field are all required to be considered in production. When the silicon is selected as the substrate, the invention has the characteristics of thermal stability, electrical conductivity, easiness in processing and the like, and can effectively solve the problems of insufficient heat dissipation, higher process cost and the like.
According to the invention, the wurtzite InGaN nanorod grows by taking silicon as a substrate, so that on one hand, the application of the GaN-based material In the fields of photoelectric devices, photovoltaic cells, carbon neutralization and the like is expanded, and more selectivity is brought by regulating InGaN of In components; on the other hand will GaCl 3 And InCl 3 Placing into the same quartz tube, introducing NH into the upper quartz tube 3 Not only can the InGaN grow on the silicon substrate In a uniformly distributed manner and reduce the component gradient difference, but also the problems that the existing InGaN material has a complex growth process, is difficult to mix In and is uneven and the like can be solved.
Drawings
FIG. 1 is a schematic diagram of an HCVD apparatus employed in the present invention;
FIG. 2 is a schematic diagram of a growth process of a wurtzite InGaN nanorod prepared by a silicon substrate according to the present invention;
FIG. 3 is an electron microscope Scan (SEM) of a sample of example 1;
FIG. 4 is an X-ray diffraction pattern (XRD) of the sample of example 1;
FIG. 5 is a photoluminescence spectrum (PL) of the sample of example 1;
FIG. 6 is a photo-voltaic diagram of a sample of example 1 in a photo-electrochemical water splitting application;
FIG. 7 is a graph of 40min photocurrent stability test of the sample of example 1.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments; all other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs, the disclosure of which is incorporated herein by reference as is commonly understood by reference.
Those skilled in the art will recognize that equivalents of the specific embodiments described, as well as those known by routine experimentation, are intended to be encompassed within the present application.
The experimental methods in the following examples are conventional methods unless otherwise specified. The instruments used in the following examples are laboratory conventional instruments unless otherwise specified; the experimental materials used in the examples described below, unless otherwise specified, were purchased from conventional biochemical reagent stores.
Example 1: a method for preparing wurtzite InGaN nanorods on a silicon substrate comprises the following specific steps:
(1) In-tube cleaning and reactant dilution: the upper and lower quartz tubes are respectively introduced with 400sccmN 2 After which the reaction zone begins to warm up.
(2) Ammoniating the silicon substrate: the pressure of ammoniation treatment of the silicon substrate is atmospheric pressure, and 1300sccmNH is introduced when the reaction area is 350 DEG C 3 Maintaining for 20min; after the treatment, si-N bonds are formed on the surface of the silicon, so that the residual stress on the surface of the silicon is reduced, and InGaN is easier to nucleate on the surface of the silicon.
(3) Growing InGaN nanorods: NH (NH) 3 The flow rate is unchanged. Adjusting N 2 The carrier gas flow rate was 250sccm. Controlling the temperature of the reaction zone to 600 ℃ and heating the InCl 3 Heating GaCl to 400 DEG C 3 The growth time was 30min at 90 ℃.
Surface morphology and structure analysis were performed on the wurtzite InGaN nanorod samples prepared on a silicon substrate in example 1, respectively. Fig. 3 is an electron microscope Scan (SEM) of a sample of example 1, from which it can be seen that the average diameter of the grown InGaN nanorods is 250nm, that the InGaN nanorods exhibit a vertically aligned morphology with less taper and greater nucleation density. Fig. 4 is an X-ray diffractometer analysis spectrum (XRD) of the sample of example 1, from which it can be seen that the sample orientation is good, and the sample grows mainly in a direction perpendicular to the wurtzite (002) plane, and the highest half-peak width of the (002) plane is very narrow, indicating that the quality of wurtzite InGaN nanorods is very high. The diffraction peak position of the (002) crystal face is 32.46 degrees, so that the indium composition of the InGaN nanorod is about 65 percent, and higher is realizedIn incorporation of (c). Fig. 5 is a photoluminescence spectrum (PL) of the sample of example 1 from which a distinct photoluminescence signal can be observed, the fluorescence spectrum of the InGaN nanorods showing an emission peak at 716 nm. FIG. 6 is a photo-voltaic plot of a sample of example 1 for use in photo-chemical decomposition of water, with a photocurrent density of 0.48mA/cm at 1.23V versus RHE 2 . Fig. 7 is a graph for testing 40min photocurrent stability of the sample of example 1, and the result shows that the InGaN nanorods have good stability when being used as photoelectric devices.
Example 2: a method for preparing wurtzite InGaN nanorods on a silicon substrate comprises the following specific steps:
(1) In-tube cleaning and reactant dilution: the upper and lower quartz tubes are respectively introduced with 400sccmN 2 After which the reaction zone begins to warm up.
(2) Ammoniating the silicon substrate: the pressure of ammoniation treatment of the silicon substrate is atmospheric pressure, and 1000sccmNH is introduced when the reaction area is 350 DEG C 3 Maintaining for 15min; after the treatment, si-N bonds are formed on the surface of the silicon, so that the residual stress on the surface of the silicon is reduced, and InGaN is easier to nucleate on the surface of the silicon.
(3) Growing InGaN nanorods: NH (NH) 3 The flow rate is unchanged. Adjusting N 2 The carrier gas flow rate was 500sccm. Controlling the temperature of the reaction zone to 550 ℃ and heating the InCl 3 Heating GaCl to 380 DEG C 3 The growth time was 20min at 70 ℃.
Example 3: a method for preparing wurtzite InGaN nanorods on a silicon substrate comprises the following specific steps:
(1) In-tube cleaning and reactant dilution: the upper and lower quartz tubes are respectively introduced with 400sccmN 2 After which the reaction zone begins to warm up.
(2) Ammoniating the silicon substrate: the pressure of ammoniation treatment of the silicon substrate is atmospheric pressure, and 1500sccmNH is introduced when the reaction area is 350 DEG C 3 Maintaining for 25min; after the treatment, si-N bonds are formed on the surface of the silicon, so that the residual stress on the surface of the silicon is reduced, and InGaN is easier to nucleate on the surface of the silicon.
(3) Growing InGaN nanorods: NH (NH) 3 The flow rate is unchanged. Adjusting N 2 The carrier gas flow rate was 1000sccm. Controlling the temperature of the reaction zone to 650 ℃, addingThermal InCl 3 Heating GaCl to 420 DEG C 3 The growth time was 40min at 80 ℃.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (2)
1. A method for preparing wurtzite InGaN nanorods on a silicon substrate, which is characterized in that: the method comprises the following specific steps:
(1) And (3) equipment installation: placing a silicon substrate into a reaction zone of a tubular furnace; three small quartz inner tubes with the diameter of 20mm are put into a quartz outer tube with the diameter of 80mm, two small quartz inner tubes are arranged at the upper part, one small quartz inner tube is arranged at the lower part, and N is respectively arranged at the upper part 2 With NH 3 Transmitting the mixture into a quartz outer tube; gaCl is placed in the inner tube of the lower quartz 3 And InCl 3 Introducing N 2 As InCl 3 And GaCl 3 Is a carrier gas for (a); 400-600sccmN before reaction 2 For washing and diluting the reactants, the reaction being carried out at atmospheric pressure;
(2) Ammoniating the silicon substrate: ammoniation treatment of silicon substrate under atmospheric pressure, and introducing 1000-1500sccmNH when the temperature of the reaction area is raised to 350 DEG C 3 Maintaining for 15min-25min; forming Si-N bonds on the surface of the treated silicon;
(3) Growing InGaN nanorods: NH (NH) 3 The flow rate is unchanged; adjusting N 2 The flow rate of the carrier gas is 250-1000sccm; controlling the temperature of the reaction zone to 550-650 ℃ and heating the InCl 3 Heating GaCl to 380-420 DEG C 3 The temperature is 70-90 ℃ and the growth time is 20-40min.
2. A method of preparing wurtzite InGaN nanorods on a silicon substrate according to claim 1, characterized by: the length of the small quartz inner tube at the upper part is 100mm; the length of the lower quartz inner tube is 1700mm.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101289172A (en) * | 2008-04-14 | 2008-10-22 | 南京大学 | Process for preparing InN nano-wire and nano-rods by chemical vapor transport method |
| CN101831628A (en) * | 2010-04-21 | 2010-09-15 | 中国科学院半导体研究所 | Method for growing high-quality In ingredient enriched InGaN thin film material |
| CN102050432A (en) * | 2009-11-04 | 2011-05-11 | 中国科学院半导体研究所 | Method for growing InN nanorod material with aid of dopant zinc |
| CN108336195A (en) * | 2018-01-11 | 2018-07-27 | 太原理工大学 | A kind of preparation method of InGaN films |
| CN108538714A (en) * | 2018-04-19 | 2018-09-14 | 中国电子科技集团公司第十三研究所 | The preparation method of III group nitride material of p-type |
| CN110747506A (en) * | 2019-10-22 | 2020-02-04 | 华南理工大学 | Transition metal doped InxGa1-xN nano column and preparation method and application thereof |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3879173B2 (en) * | 1996-03-25 | 2007-02-07 | 住友電気工業株式会社 | Compound semiconductor vapor deposition method |
| JPH1041547A (en) * | 1996-07-23 | 1998-02-13 | Nec Corp | Nitrogen compound semiconductor element |
| JP4222707B2 (en) * | 2000-03-24 | 2009-02-12 | 東京エレクトロン株式会社 | Plasma processing apparatus and method, gas supply ring and dielectric |
| US7132677B2 (en) * | 2004-02-13 | 2006-11-07 | Dongguk University | Super bright light emitting diode of nanorod array structure having InGaN quantum well and method for manufacturing the same |
| US8563395B2 (en) * | 2009-11-30 | 2013-10-22 | The Royal Institute For The Advancement Of Learning/Mcgill University | Method of growing uniform semiconductor nanowires without foreign metal catalyst and devices thereof |
| CN102820213A (en) * | 2012-09-05 | 2012-12-12 | 中国科学院半导体研究所 | Method for growing single crystal GaN nanometer pipes by utilizing InN nanometer rods as nucleation layers |
| US9978904B2 (en) * | 2012-10-16 | 2018-05-22 | Soraa, Inc. | Indium gallium nitride light emitting devices |
| JP6384851B2 (en) * | 2014-03-03 | 2018-09-05 | 国立大学法人大阪大学 | Group III nitride crystal manufacturing method, group III nitride crystal, semiconductor device, and group III nitride crystal manufacturing apparatus |
| CN108206130B (en) * | 2018-01-11 | 2023-10-10 | 华南理工大学 | Indium nitride nano-pillar epitaxial wafer grown on aluminum foil substrate and preparation method thereof |
| CN109795982A (en) * | 2018-12-30 | 2019-05-24 | 华南师范大学 | A kind of nano-wire array, opto-electronic device and its manufacturing method |
| CN111613698B (en) * | 2020-05-22 | 2020-12-01 | 山西穿越光电科技有限责任公司 | Graphene intercalation III-group nitride semiconductor composite film and preparation method thereof |
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101289172A (en) * | 2008-04-14 | 2008-10-22 | 南京大学 | Process for preparing InN nano-wire and nano-rods by chemical vapor transport method |
| CN102050432A (en) * | 2009-11-04 | 2011-05-11 | 中国科学院半导体研究所 | Method for growing InN nanorod material with aid of dopant zinc |
| CN101831628A (en) * | 2010-04-21 | 2010-09-15 | 中国科学院半导体研究所 | Method for growing high-quality In ingredient enriched InGaN thin film material |
| CN108336195A (en) * | 2018-01-11 | 2018-07-27 | 太原理工大学 | A kind of preparation method of InGaN films |
| CN108538714A (en) * | 2018-04-19 | 2018-09-14 | 中国电子科技集团公司第十三研究所 | The preparation method of III group nitride material of p-type |
| CN110747506A (en) * | 2019-10-22 | 2020-02-04 | 华南理工大学 | Transition metal doped InxGa1-xN nano column and preparation method and application thereof |
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