CN105463580A - Preparation method of cadmium selenide or cadmium sulfide two-dimensional monocrystal nanosheet - Google Patents
Preparation method of cadmium selenide or cadmium sulfide two-dimensional monocrystal nanosheet Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
- C30B29/50—Cadmium sulfide
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/64—Flat crystals, e.g. plates, strips or discs
Abstract
The invention discloses a preparation method of a cadmium selenide or cadmium sulfide two-dimensional monocrystal nanosheet. The method comprises the steps that the CdSe or CdS two-dimensional monocrystal nanosheet is prepared through a van der Waals epitaxial growth technology, the method is characterized in that a mica sheet which is smooth in surface and free of chemical dangling bond is adopted to serve as a substrate, CdCl2 powder or Se powder or S powder serves as a source material, argon serves as carrier gas, CdCl2 stream is reacted with Se or S steam to form CdSe or CdS steam at high temperature, and the steam is deposited on the mica sheet for nucleation and epitaxially grows into the CdSe or CdS two-dimensional monocrystal nanosheet. The preparation method of the cadmium selenide or cadmium sulfide two-dimensional monocrystal nanosheet is easy to operate, low in cost and strong in controllability, the obtained CdSe or CdS has the advantages of being good in size uniformity, high in degree of crystallinity and the like, and important research value and wide application prospect in the fields of solar cells, field effect transistors, photoelectric detectors, photocatalyses and the like are achieved.
Description
Technical field
The present invention relates to nanometer semiconductor technology field.More specifically, the preparation method of a kind of big area cadmium selenide (CdSe) and Cadmium Sulfide (CdS) two-dimentional single crystal nanoplate is related to.
Background technology
In recent years, two-dimension nano materials causes the research boom in global range with the structure of its uniqueness and physics-chem characteristic, has all shown huge application potential in fundamental research and field of industrial production.Current research the most widely two-dimensional material mainly based on the stratified material of Graphene and Transition-metal dichalcogenide.Graphene has that intensity is large, carrier mobility advantages of higher, but intrinsic Graphene band gap is zero, and the field-effect transistor current switch efficiency that result in based on it is lower.The Transition-metal dichalcogenide of stratiform is similar to graphene-structured, because the model ylid bloom action power that interlayer is more weak is conducive to being peeled off the two-dimensional nanostructure into ultra-thin.The character that Transition-metal dichalcogenide two-dimension nano materials shows compensate for the deficiency of Graphene to a certain extent, has the regulatable band gap of 1-2eV.Such as molybdenumdisulphide, tungsten disulfide etc., when it becomes single layer configuration from bulk, its band gap can be direct band gap from indirect band gap transitions, this makes it in electronics and opto-electronics, have sizable application prospect (Q.H.Wang, KouroshKalantar-Zadeh, AndrasKis, JonathanN.ColemanandMichaelS.Strano.Electronicsandoptoel ectronicsoftwo-dimensionaltransitionmetaldichalcogenides .NatureNanotechnology, 2012,7,699-712).
But, much there is the limitation of non-laminar material due to its crystalline structure of excellent specific property, lack the motivating force of Two-Dimensional Anisotropic growth, so the two-dimensional nanostructure of preparation non-laminar material has very large challenge.Recent research shows, the two-dirnentional structure of non-laminar material has prepared very large progress.Scientists adopts Van der Waals epitaxy technology successively to prepare the two-dimensional nano sheet structure (Q.S.Wang of the materials such as tellurium, gallium arsenide, uhligite, M.Safdar, K.Xu, M.Mirza, Z.X.Wang, andJ.He.VanderWaalsEpitaxyandPhotoresponseofHexagonalTel luriumNanoplatesonFlexibleMicaSheets.ACSNano, 2014,8,7497-7505; Y.Alaskar, S.Arafin, D.Wickramaratne, M.A.Zurbuchen, L.He, J.McKay, Q.Lin, M.S.Goorsky, R.K.Lake, K.L.Wang.TowardsvanderWaalsEpitaxialGrowthofGaAsonSiusin gaGrapheneBufferLayer.Adv.Funct.Mater.2014,24,6629-6638; Y.P.Wang, Y.F.Shi, G.Q.Xin, J.Lian, andJ.Shi, Two-DimensionalvanderWaalsEpitaxyKineticsinaThree-Dimens ionalPerovskiteHalide.Cryst.GrowthDes.2015,15,4741-4749.).The database of two-dimensional material has been enriched in the successful preparation of these non-laminar material two-dimensional nanostructures, also for its application in the fields such as solar cell, transistor, photodetector provides possibility.
At present, the method preparing two-dimensional nanostructure mainly contains top-down stripping method and vapour deposition process from bottom to top.Van der Waals epitaxy technology is a kind of CVD (Chemical Vapor Deposition) method of uniqueness, is also to prepare now one of the most frequently used method of non-laminar material two-dimensional nanostructure.Van der Waals epitaxy technology usually adopts smooth surface and hangs the material of key as substrate without chemistry, utilizes the Van der Waals force between epitaxial film and substrate or electrostatic weak interaction to prepare high-quality two-dimensional material.This technology is without the need to epitaxial film and substrate Cheng Jian, quick and the effective relaxation of the strain energy of epitaxial film, thus effectively reduce the impact of epitaxial film and substrate lattice mismatch, be particularly useful for the growth (MuhammadIqbalBaktiUtama of the material large with substrate lattice mismatch, Q.Zhang, J.Zhang, Y.W.Yuan, FranciscoJ.Belarre, JordiArbiolbcandQ.H.Xiong.RecentDevelopmentsandFutureDir ectionsintheGrowthofNanostructuresbyvanderWaalsEpitaxy.N anoscale2013, 5, 3570 – 3588.).At present, Van der Waals epitaxy technology reaches its maturity, and be widely used in the two-dirnentional structure growth (S.Najmaei of stratified material, Z.Liu, W.Zhou, X.L.Zou, G.Shi, S.D.Lei, B.I.Yakobson, J.C.Idrobo, P.M.AjayanandJ.Lou.Vapourphasegrowthandgrainboundarystru ctureofmolybdenumdisulphideatomiclayers.Nat.Mater.2013, 12, 754-759.), preparation (the X.W.Zhang of two-dimensional hetero-junction, F.Meng, JeffreyR.Christianson, ChristianArroyo-Torres, MarkA.Lukowski, D.Liang, J.R.Schmidt, andS.Jin.VerticalHeterostructuresofLayeredMetalChalcogen idesbyvanderWaalsEpitaxy.NanoLett.2014, 14, 3047-3054), and the one dimension (M.I.B.Utama of non-laminar material, Z.P.Peng, R.Chen, B.Peng, X.L.Xu, Y.J.Dong, L.M.Wong, S.J.Wang, H.D.SunandQ.H.Xiong.VerticallyAlignedCadmiumChalcogenide NanowireArraysonMuscoviteMica:ADemonstrationofEpitaxialG rowthStrategy.NanoLett.2011, 11, 3051 – 3057.) and two-dirnentional structure growth (Q.S.Wang, K.Xu, Z.X.Wang, F.Wang, Y.Huang, M.Safdar, X.Y.Zhan, F.M.Wang, Z.Z.Cheng, J.He, vanderWaalsEpitaxialUltrathinTwo-DimensionalNonlayeredSe miconductorforHighlyEfficientFlexibleOptoelectronicDevic es.NanoLett.2015, 15, 1183-1189.).But up to the present grow other non-laminar material about Van der Waals epitaxy technology, the research as the two-dimensional nanostructure of II-VI group semi-conductor also rarely has report.
CdSe and CdS is important II-VI group semiconductor compound, all there is wurtzite and the main crystalline structure of two kinds, zink sulphide, because the process based prediction model of their uniquenesses has potential using value in nanoelectronics and opto-electronics, the research of its Synthesis and applications has caused the increasing interest of scientists.CdSe band gap is about 1.7eV, its nano material has extremely excellent fluorescent characteristic, by changing the size of nanoparticle, its fluorescence spectrum can produce the change (M.J.Bowers from ruddiness to blue light, J.R.McBride, S.J.Rosenthal, White-LightEmissionfromMagic-SizedCadmiumSelenideNanocry stals.J.Am.Chem.Soc.2005,127 (44), 15378 – 15379.).And it has the characteristics such as spectral width is narrow, symmetry good, fluorescent stability is high, the fields such as photochemical catalysis, quantum dot solar cell, photodiode are widely used in.CdS band gap is about 2.4eV, uptake factor higher (104-105cm-1), there is the advantages such as price is low, preparation technology is simple, be widely used as the N-shaped window material of thin-film solar cells, the CdS/CdTe solar cell suitability for industrialized production of current people's most study.But the research at present for CdSe and CdS mainly concentrates in quantum dot, nano wire, the isostructural preparation of nano belt.And some preparations based on the two-dimensional nano sheet of this bi-material rarely had are all the liquid phase method (S.Ithurria adopted, M.D.Tessier, B.Mahler, R.P.S.M.Lobo, B.DubertretandAl.L.Efros.Colloidalnanoplateletswithtwo-d imensionalelectronicstructure.NatureMaterials.2011,10,936 – 941.), nanometer sheet prepared by the method exists that degree of crystallinity is low, size is little, the solvent not shortcoming such as easy cleaning, and these deficiencies constrain its application on nano photoelectric device greatly.
Therefore, need to provide a kind of simple to operate, repeatability is high, controllability strong, and big area can prepare the method for CdSe or CdS two-dimensional semiconductor nano material.
Summary of the invention
One object of the present invention is the preparation method providing a kind of cadmium selenide or Cadmium Sulfide two dimension single crystal nanoplate.
In the present invention, applicant have employed a kind of new method and carrys out big area and prepare CdSe and CdS two-dimensional semiconductor nano material.Be different from liquid phase synthesizing method of the prior art, the method not only simple to operate, repeatability is high, controllability is strong, and the two-dimensional nano sheet prepared has, and area is large, dimensional homogeneity good, degree of crystallinity advantages of higher, and itself and substrate have good consistency, be convenient to the exploration and application of flexible device.Meanwhile, material just can transfer to other substrates by simple method, is convenient to research and development and the application of extensive photoelectric device.
For achieving the above object, the present invention adopts following technical proposals:
A preparation method for cadmium selenide or Cadmium Sulfide two dimension single crystal nanoplate, comprises the steps:
1) choose there is two-dimensional layered structure material as substrate, using one side smooth for smooth surface as aufwuchsplate;
2) by CdCl
2powder puts into high-temperature resistant container, then the heated center region of horizontal pipe furnace is placed it in, excessive Se powder is put into high-temperature resistant container and be placed in heated center upstream distance heated center 20-26cm, or excessive S powder is put into high-temperature resistant container and be placed in distance heated center 24-30cm place, heated center upstream, substrate is placed in the heated center downstream of horizontal pipe furnace, distance heated center 5-20cm;
3), to horizontal tube stove evacuation, when pressure drop is to 0.1Pa in stove, is filled with inactive gas and makes chamber internal gas pressure get back to atmospheric pressure;
4) be warming up to 750 DEG C-800 DEG C with the speed of 20-30 DEG C/min and keep 10-15 minute, in reaction process, the flow rate control of inactive gas is at 15-30sccm;
5) after reaction terminates, treat that tube furnace drops to room temperature naturally, take out substrate, on substrate, namely growth has cadmium selenide or Cadmium Sulfide two dimension single crystal nanoplate.
A large amount of experimental verifications is carried out by applicant, in technical solution of the present invention, temperature of reaction and flow rate of carrier gas having the greatest impact to Material growth.Wherein the temperature of reaction of 750 DEG C-800 DEG C and the flow rate of carrier gas of 15-30sccm are best experimental program.When temperature of reaction is too high, material is more easily grown to one-dimensional nano line, and the making that when temperature is too low, the nanometer sheet size of growth is less, distribution close packing is unfavorable for large-scale semiconductor device.The too high nanometer sheet that also can make of carrier gas flux grows film that is overstocked thus formation polycrystalline in addition.
Preferably, described substrate is sheet mica (Mica), Graphene, hexagonal boron nitride or moly-sulfide.This different materials all has natural laminate structure, obtains easily via the stripping method of " from top to bottom " or the synthesis method of " from bottom to top ".And its smooth surface is smooth, without the outstanding key of chemistry, being very beneficial for sample being transferred to the preparation other substrates carrying out device, is the epitaxially grown desirable substrate of Van der Waals.
More preferably, described substrate is sheet mica.Sheet mica is cheap and more easily obtain for other stratified materials, is applicable to very much the big area preparation of two-dimensional material in addition because its size is comparatively large.Its natural light transmission and flexibility are also beneficial to the making of subsequent optical and photoelectricity flexible device.
Preferably, substrate sheet mica is divided into the rectangle of size 2cm*3cm, and sheet mica is dissociated into two thin slices naturally from centre, get new face of dissociating as growth substrates.Have some cuts or adsorptive because sheet mica that storage period is longer is difficult to invariably surface, the existence of these impurity can have influence on nucleation and the growth of material, therefore selects the relative clean even curface newly separated as aufwuchsplate.
Preferably, described high-temperature resistant container is ceramic boat, quartz boat, quartz glass tube.
Preferably, described inactive gas is argon gas, nitrogen, helium or neon.
The invention also discloses a kind of adopt preparation method described above to prepare cadmium selenide or Cadmium Sulfide two dimension single crystal nanoplate.
Further, the invention discloses a kind of cadmium selenide as above or the application of Cadmium Sulfide two dimension single crystal nanoplate in making photoelectric device, solar cell, field-effect transistor, visible-light detector and photocatalysis field.
Different from liquid phase preparation process general in prior art, in the present invention, applicant adopts the method for Van der Waals extension to prepare CdSe, CdS two-dimensional nano sheet of big area, high monocrystalline.The feature of this method adopts smooth surface and is substrate without the sheet mica that chemistry hangs key, with CdCl
2powder, Se powder or S powder are source material, and inactive gas is carrier gas, under the high temperature conditions (temperature of reaction of 750 DEG C-800 DEG C) CdCl
2steam forms CdSe or CdS steam with Se or S vapor reaction respectively, and then (flow rate of carrier gas of 15-30sccm) deposits to forming core on sheet mica under the transporting of inactive gas, and be epitaxially grown as CdSe or the CdS two dimension single crystal nanoplate of six side's phases.The arrangement of CdSe and CdS two-dimensional nano sheet that the present invention prepares is regular, and crystallinity is high, has important researching value and application prospect widely in fields such as solar cell, field-effect transistor, visible-light detector, photochemical catalysis.
Beneficial effect of the present invention is as follows:
(1) preparation technology is simple, and the present invention adopts single stage method to react, and only source material need be put into tube furnace, sets carrier gas flux and program of heating;
(2) production cost is lower, CdCl
2powder price is cheap, fusing point is lower, can save certain production cost;
(3) repeatability is high, prepare in this way big area, size uniform the two-dimensional nano sheet success ratio of CdSe and CdS high;
(4) controllability is strong, can control the density, thickness, size, shape etc. of two-dimensional nano sheet by changing the conditions such as depositing time, vaporization temperature, carrier gas flux;
(5) nanometer sheet arrangement is regular, and the two-dimensional nano sheet of CdSe and CdS of growth and substrate have good epitaxial orientation relation, have obvious Van der Waals epitaxy characteristic;
(6) growth cycle is short, and this method is reacted to from being heated to sampling of finally lowering the temperature, and only needs four or five hours, consuming time few;
(7) crystallinity is high, and adopt the chemical vapour deposition under high temperature, the nano material prepared under this condition has higher degree of crystallinity.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.
Fig. 1 illustrates the growing apparatus schematic diagram of CdSe and CdS of the present invention two dimension single crystal nanoplate.
Fig. 2 illustrates SEM picture (b) of scanning electron microscope (SEM) picture (a) of CdSe nanometer sheet prepared by the embodiment of the present invention 1 and the CdS nanometer sheet of embodiment 2 preparation.
Fig. 3 illustrates low power atomic force microscope (AFM) picture (a) of CdSe nanometer sheet prepared by the embodiment of the present invention 1, the AFM picture of single CdSe nanometer sheet and elevation information (b); And AFM picture (c) of the CdS nanometer sheet of embodiment 2 preparation, the AFM picture of single CdS nanometer sheet and elevation information (d).
The X ray diffracting data of CdS nanometer sheet within the scope of 20 ° to 34 ° diffraction angle that Fig. 4 illustrates CdSe nanometer sheet prepared by the embodiment of the present invention 1, prepared by embodiment 2.
The Raman spectrum of CdS nanometer sheet (b) that Fig. 5 illustrates CdSe nanometer sheet (a) prepared by the embodiment of the present invention 1, prepared by embodiment 2.
Fig. 6 illustrates CdSe nanometer sheet transmission electron microscope (TEM) bright field image (a), corresponding selected area electron diffraction (SAED) picture (b) prepared by the embodiment of the present invention 1 and high resolution TEM (HRTEM) image (c); CdS nanometer sheet TEM bright field image (d), corresponding selected area electron diffraction (SAED) picture (e) prepared by the embodiment of the present invention 2, and HRTEM image (f).
Embodiment
In order to be illustrated more clearly in the present invention, below in conjunction with preferred embodiments and drawings, the present invention is described further.Parts similar in accompanying drawing represent with identical Reference numeral.It will be appreciated by those skilled in the art that specifically described content is illustrative and nonrestrictive, should not limit the scope of the invention with this below.
Embodiment 1
(1) preparation of sheet mica substrate:
1, with scissors, sheet mica is divided into the rectangle of size 2cm*3cm.
2, with the tweezers that top is tapering, sheet mica is dissociated into two thin slices naturally from centre, new face of dissociating is as growth substrates.
(2) CdCl of 0.1 gram is taken
2powder, is then put in the heated center region of tube furnace.Take the Se powder of 0.79 gram, be placed in vitrified pipe is about 20cm position apart from heated center upstream, sheet mica substrate is put in the downstream of single temperature-area tubular furnace heated center, distance center is about 5-20cm.
(3) open mechanical pump to vacuumize, when pressure drop is to 0.1Pa in stove, is filled with high-purity argon gas fast and makes pressure in chamber get back to atmospheric pressure.
(4) be rapidly heated to 750 DEG C with the speed of 20 DEG C/min and keep 15 minutes, the flow rate control of the argon gas in reaction process is at 15sccm.
(5) after reaction terminates, treat that tube furnace drops to room temperature naturally, take out sheet mica substrate namely have CdSe two dimension single crystal nanoplate at sheet mica substrate grown.
The growing apparatus schematic diagram of CdSe and CdS two dimension single crystal nanoplate of the present invention is with reference to shown in Fig. 1.In figure, the implication of each digitized representation is: 1-S powder or Se powder, 2-CdCl
2powder, 3-substrate.
Scanning electron microscope (SEM) picture of CdSe nanometer sheet prepared by the present embodiment is as shown in (a) in Fig. 2, most two-dimensional nano sheet presents hexagonal shape, and the limit of two-dimensional nano sheet is substantially all parallel to each other, illustrate that these nanometer sheet have identical growth orientation, namely there is obvious Van der Waals epitaxy feature.
Low power atomic force microscope (AFM) picture that (a) in Fig. 3 is CdSe nanometer sheet, the AFM picture that (b) is single CdSe nanometer sheet and elevation information.
Fig. 4 illustrates the X ray diffracting data of CdSe nanometer sheet within the scope of 20 ° to 34 ° diffraction angle, demonstrates this nanometer sheet and all has good crystallinity, and be hexagonal wurtzite crystal structure.
In Fig. 5, (a) is the Raman spectrum of CdSe nanometer sheet, and Characteristic Raman peak LO, 2LO in figure are respectively single order and second order longitudinal optical phonon pattern, wherein point and narrow peak also demonstrate that the nanometer sheet of preparation has highly crystalline.
In Fig. 6, (a) is hexagonal structure CdSe nanometer sheet transmission electron microscope (TEM) bright field image; B () is corresponding selected area electron diffraction (SAED) picture, diffraction spot presents six sub symmetry characteristics of rule, wherein the point diffraction of inner ring corresponds to { 10-10} family of crystal planes, the point diffraction of secondary inner ring corresponds to, and { 11-20} family of crystal planes, demonstrates CdSe nanometer sheet again and has good monocrystalline and present hexagonal crystallographic texture; C high resolution TEM (HRTEM) image that () is CdSe nanometer sheet, the spacing marked in figure is 0.21nm, consistent with the spacing of lattice of CdSe{11-20} family of crystal planes.
Embodiment 2
(1) preparation of sheet mica substrate:
1, with scissors, sheet mica is divided into the rectangle of size 2cm*3cm.
2, with the tweezers that top is tapering, sheet mica is dissociated into two thin slices naturally from centre, new face of dissociating is as growth substrates.
(2) CdCl of 0.1 gram is taken
2powder, is then put in the heated center region of tube furnace.Take the S powder of 0.32 gram, be placed in vitrified pipe is about 24cm position apart from heated center upstream, sheet mica substrate is put in the downstream of single temperature-area tubular furnace heated center, distance center is about 5-20cm.
(3) open mechanical pump to vacuumize, when pressure drop is to 0.1Pa in stove, is filled with high-purity argon gas fast and makes pressure in chamber get back to atmospheric pressure.
(4) be rapidly heated to 750 DEG C with the speed of 20 DEG C/min and keep 15 minutes, the flow rate control of the argon gas in reaction process is at 15sccm.
(5) after reaction terminates, treat that tube furnace drops to room temperature naturally, take out sheet mica substrate namely have CdS two dimension single crystal nanoplate at sheet mica substrate grown.
Scanning electron microscope (SEM) picture of CdS nanometer sheet prepared by the present embodiment is as shown in (b) in Fig. 2, most two-dimensional nano sheet presents hexagonal shape, and the limit of two-dimensional nano sheet is substantially all parallel to each other, illustrate that these nanometer sheet have identical growth orientation, namely there is obvious Van der Waals epitaxy feature.
Low power atomic force microscope (AFM) picture that (c) in Fig. 3 is CdS nanometer sheet, the AFM picture that (d) is single CdSe nanometer sheet and elevation information.
Fig. 4 illustrates the X ray diffracting data of CdS nanometer sheet within the scope of 20 ° to 34 ° diffraction angle, demonstrates this nanometer sheet and all has good crystallinity, and be hexagonal wurtzite crystal structure.
In Fig. 5, (b) is the Raman spectrum of CdS nanometer sheet, and Characteristic Raman peak LO, 2LO in figure are respectively single order and second order longitudinal optical phonon pattern, wherein point and narrow peak also demonstrate that the nanometer sheet of preparation has highly crystalline.
In Fig. 6, (d) is hexagonal structure CdS nanometer sheet TEM bright field image; E () is corresponding selected area electron diffraction (SAED) picture, illustrate that CdS nanometer sheet also has good monocrystalline and present hexagonal crystallographic texture; F HRTEM image that () is CdS nanometer sheet.
Embodiment 3
(1) preparation of sheet mica substrate:
1. with scissors, sheet mica is divided into the rectangle of size 2cm*3cm.
2. with the tapering tweezers in top by sheet mica from centre naturally cleaved one-tenth two thin slice, new cleavage surface is as growth substrates.
(2) CdCl of 0.1 gram is taken
2powder, is then put in the heated center region of tube furnace.Take the selenium powder of 0.79 gram, be placed in vitrified pipe is about 26cm position apart from heated center upstream, sheet mica substrate is put in successively the downstream of single temperature-area tubular furnace heated center, distance center is about 5-20cm.
(3) open mechanical pump to vacuumize, when pressure drop is to 0.1Pa in stove, is filled with high-purity argon gas fast and makes pressure in chamber get back to atmospheric pressure.
(4) be rapidly heated to 800 DEG C with the speed of 30 DEG C/min and keep 10 minutes, the flow rate control of the argon gas in reaction process is at 30sccm.
(5) after reaction terminates, treat that tube furnace drops to room temperature naturally, take out sheet mica substrate namely have CdSe two dimension single crystal nanoplate at sheet mica substrate grown.The performance perameter of this CdSe nanometer sheet is similar to the Product checking result in embodiment 1.
Embodiment 4
(1) preparation of sheet mica substrate:
1. with scissors, sheet mica is divided into the rectangle of size 2cm*3cm.
2. with the tapering tweezers in top by sheet mica from centre naturally cleaved one-tenth two thin slice, new cleavage surface is as growth substrates.
(2) CdCl of 0.1 gram is taken
2powder, is then put in the heated center region of tube furnace.Take the sulphur powder of 0.32 gram, be placed in vitrified pipe is about 30cm position apart from heated center upstream, sheet mica substrate is put in successively the downstream of single temperature-area tubular furnace heated center, distance center is about 5-20cm.
(3) open mechanical pump to vacuumize, when pressure drop is to 0.1Pa in stove, is filled with high pure nitrogen fast and makes pressure in chamber get back to atmospheric pressure.
(4) be rapidly heated to 800 DEG C with the speed of 30 DEG C/min and keep 10 minutes, the flow rate control of the nitrogen in reaction process is at 30sccm.
(5) after reaction terminates, treat that tube furnace drops to room temperature naturally, take out sheet mica substrate namely have CdS two dimension single crystal nanoplate at sheet mica substrate grown.The performance perameter of this CdS nanometer sheet is similar to the Product checking result in embodiment 2.
Embodiment 5
(1) preparation of sheet mica substrate:
1. with scissors, sheet mica is divided into the rectangle of size 2cm*3cm.
2. with the tapering tweezers in top by sheet mica from centre naturally cleaved one-tenth two thin slice, new cleavage surface is as growth substrates.
(2) CdCl of 0.1 gram is taken
2powder, is then put in the heated center region of tube furnace, takes the selenium powder of 0.79 gram, is placed in vitrified pipe is about 24cm position apart from heated center upstream.Sheet mica substrate is put in successively the downstream of single temperature-area tubular furnace heated center, distance center is about 5-20cm.
(3) open mechanical pump to vacuumize, when pressure drop is to 0.1Pa in stove, is filled with high-purity argon gas fast and makes pressure in chamber get back to atmospheric pressure.
(4) be rapidly heated to 780 DEG C with the speed of 25 DEG C/min and keep 12 minutes, the flow rate control of the argon gas in reaction process is at 20sccm.
(5) after reaction terminates, treat that tube furnace drops to room temperature naturally, take out sheet mica substrate namely have CdSe two dimension single crystal nanoplate at sheet mica substrate grown.The performance perameter of this CdSe nanometer sheet is similar to the Product checking result in embodiment 1.
Embodiment 6
(1) preparation of graphene substrate:
1. adopt the Copper Foil after acetone and ethanol postincubation as substrate, methane is as carbon source, and hydrogen, as reducing gas, carries out the chemical vapour deposition experiment of normal pressure in the atmosphere of argon gas.
2. by regulating the suitable condition such as underlayer temperature, heat-up rate, growth time to obtain the large-area individual layer of high quality and a small amount of multi-layer graphene on Copper Foil.
3. utilize polymethylmethacrylate, as protective film, epontic for copper Graphene is transferred to silicon oxide surface.
(2) CdCl of 0.1 gram is taken
2powder, is then put in the heated center region of tube furnace, takes the sulphur powder of 0.32 gram, is placed in vitrified pipe and is about 28cm position apart from heated center upstream.Silicon oxide substrate with Graphene is put in successively the downstream of single temperature-area tubular furnace heated center, distance center is about 5-20cm.
(3) open mechanical pump to vacuumize, when pressure drop is to 0.1Pa in stove, is filled with high-purity argon gas fast and makes pressure in chamber get back to atmospheric pressure.
(4) be rapidly heated to 780 DEG C with the speed of 25 DEG C/min and keep 12 minutes, the flow rate control of the argon gas in reaction process is at 20sccm.
(5) after reaction terminates, treat that tube furnace drops to room temperature naturally, take out graphene substrate namely have CdS two dimension single crystal nanoplate at graphene-based bottom growth.The performance perameter of this CdS nanometer sheet is similar to the Product checking result in embodiment 2.
Embodiment 7
(1) preparation of hexagonal boron nitride substrate:
1. adopt the Copper Foil after acetone and ethanol postincubation as substrate, ammonia borane is as carbon source, and hydrogen carries out the chemical vapour deposition experiment of low pressure as carrier gas.
2. by regulating the suitable condition such as underlayer temperature, carrier gas flux to obtain large-area hexagonal boron nitride atomic layer level thin film on Copper Foil.
3. utilize polymethylmethacrylate, as protective film, epontic for copper hexagonal boron nitride is transferred to silicon oxide surface.
(2) CdCl of 0.1 gram is taken
2powder, is then put in the heated center region of tube furnace, takes the selenium powder of 0.79 gram, is placed in vitrified pipe is about 20cm position apart from heated center upstream.Silicon oxide substrate with hexagonal boron nitride is put in successively the downstream of single temperature-area tubular furnace heated center, distance center is about 5-20cm.
(3) open mechanical pump to vacuumize, when pressure drop is to 0.1Pa in stove, is filled with high-purity argon gas fast and makes pressure in chamber get back to atmospheric pressure.
(4) be rapidly heated to 750 DEG C with the speed of 20 DEG C/min and keep 10 minutes, the flow rate control of the argon gas in reaction process is at 15sccm.
(5) after reaction terminates, treat that tube furnace drops to room temperature naturally, take out hexagonal boron nitride substrate namely have CdSe two dimension single crystal nanoplate at hexagonal boron nitride substrate grown.The performance perameter of this CdSe nanometer sheet is similar to the Product checking result in embodiment 1.
Embodiment 8
(1) preparation of moly-sulfide substrate:
1. adopt the oxidized silicon chip after acetone and ethanol postincubation as substrate, molybdenum oxide and sulphur powder are as reaction source, and argon gas carries out the chemical vapour deposition experiment of normal pressure as carrier gas in single temperature-area tubular furnace.
2. by regulating the suitable condition such as temperature of reaction, heat-up rate, carrier gas flux to obtain the large-sized individual layer of high quality and multilayer moly-sulfide two-dimensional nano sheet in silicon oxide substrate.
(2) CdCl of 0.1 gram is taken
2powder, is then put in the heated center region of tube furnace, takes the selenium powder of 1.0 grams, is placed in vitrified pipe is about 24m position apart from heated center upstream.The silicon oxide substrate that grown moly-sulfide is put in successively the downstream of single temperature-area tubular furnace heated center, distance center is about 5-20cm.
(3) open mechanical pump to vacuumize, when pressure drop is to 0.1Pa in stove, is filled with high-purity argon gas fast and makes pressure in chamber get back to atmospheric pressure.
(4) be rapidly heated to 800 DEG C with the speed of 20 DEG C/min and keep 15 minutes, the flow rate control of the argon gas in reaction process is at 15sccm.
(5) after reaction terminates, treat that tube furnace drops to room temperature naturally, take out moly-sulfide substrate namely have CdSe two dimension single crystal nanoplate at moly-sulfide substrate grown.The performance perameter of this CdSe nanometer sheet is similar to the Product checking result in embodiment 1.
Obviously; the above embodiment of the present invention is only for example of the present invention is clearly described; and be not the restriction to embodiments of the present invention; for those of ordinary skill in the field; can also make other changes in different forms on the basis of the above description; here cannot give exhaustive to all embodiments, every belong to technical scheme of the present invention the apparent change of extending out or variation be still in the row of protection scope of the present invention.
Claims (8)
1. a preparation method for cadmium selenide or Cadmium Sulfide two dimension single crystal nanoplate, is characterized in that, comprise the steps:
1) choose there is two-dimensional layered structure material as substrate, using one side smooth for smooth surface as aufwuchsplate;
2) by CdCl
2powder puts into high-temperature resistant container, then the heated center region of horizontal pipe furnace is placed it in, Se powder is put into high-temperature resistant container and be placed in heated center upstream distance heated center 20-26cm, or S powder is put into high-temperature resistant container and be placed in heated center upstream distance heated center 24-30cm, substrate is placed in the heated center downstream of horizontal pipe furnace, distance heated center 5-20cm;
3), to horizontal tube stove evacuation, when pressure drop is to 0.1Pa in stove, is filled with inactive gas and makes chamber internal gas pressure get back to atmospheric pressure;
4) be warming up to 750 DEG C-800 DEG C with the speed of 20-30 DEG C/min and keep 10-15 minute, in reaction process, the flow rate control of inactive gas is at 15-30sccm;
5) after reaction terminates, treat that tube furnace drops to room temperature naturally, take out substrate, on substrate, namely growth has cadmium selenide or Cadmium Sulfide two dimension single crystal nanoplate.
2. the preparation method of a kind of cadmium selenide according to claim 1 or Cadmium Sulfide two dimension single crystal nanoplate, is characterized in that: described substrate is sheet mica, Graphene, hexagonal boron nitride or moly-sulfide.
3. the preparation method of a kind of cadmium selenide according to claim 2 or Cadmium Sulfide two dimension single crystal nanoplate, is characterized in that: described substrate is preferably sheet mica, and sheet mica is dissociated into two thin slices naturally from centre, get new face of dissociating as aufwuchsplate.
4. the preparation method of a kind of cadmium selenide according to claim 1 or Cadmium Sulfide two dimension single crystal nanoplate, is characterized in that: described high-temperature resistant container is ceramic boat, quartz boat or quartz glass tube.
5. the preparation method of a kind of cadmium selenide according to claim 1 or Cadmium Sulfide two dimension single crystal nanoplate, is characterized in that: the add-on of described Se powder or S powder according to CdCl
2the stoichiometric ratio of carrying out reacting is excessive.
6. the preparation method of a kind of cadmium selenide according to claim 1 or Cadmium Sulfide two dimension single crystal nanoplate, is characterized in that: described inactive gas is argon gas, nitrogen, helium or neon.
7. the cadmium selenide adopting described preparation method as arbitrary in claim 1-6 to prepare or the two-dimentional single crystal nanoplate of Cadmium Sulfide.
8. cadmium selenide as claimed in claim 7 or the application of Cadmium Sulfide two dimension single crystal nanoplate in the fields such as solar cell, field-effect transistor, visible-light detector and photochemical catalysis.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103194729A (en) * | 2013-03-27 | 2013-07-10 | 中国科学院物理研究所 | Method for preparing metal chalcogenide film |
| CN103614777A (en) * | 2013-10-15 | 2014-03-05 | 中国科学院理化技术研究所 | Preparation method of large-area single-layer or multi-layer molybdenum diselenide single chip |
| CN104085915A (en) * | 2014-06-23 | 2014-10-08 | 陕西师范大学 | Preparation method for hexagonal CdS nanosheet with high-energy crystal face (001) exposed |
| CN104746144A (en) * | 2015-04-15 | 2015-07-01 | 中国科学院理化技术研究所 | Preparation method of stannic disulfide monocrystal nanosheet |
| CN105002555A (en) * | 2015-08-11 | 2015-10-28 | 武汉大学 | Growing method of ZnO single-crystal nanosheet |
-
2016
- 2016-01-07 CN CN201610008705.7A patent/CN105463580B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103194729A (en) * | 2013-03-27 | 2013-07-10 | 中国科学院物理研究所 | Method for preparing metal chalcogenide film |
| CN103614777A (en) * | 2013-10-15 | 2014-03-05 | 中国科学院理化技术研究所 | Preparation method of large-area single-layer or multi-layer molybdenum diselenide single chip |
| CN104085915A (en) * | 2014-06-23 | 2014-10-08 | 陕西师范大学 | Preparation method for hexagonal CdS nanosheet with high-energy crystal face (001) exposed |
| CN104746144A (en) * | 2015-04-15 | 2015-07-01 | 中国科学院理化技术研究所 | Preparation method of stannic disulfide monocrystal nanosheet |
| CN105002555A (en) * | 2015-08-11 | 2015-10-28 | 武汉大学 | Growing method of ZnO single-crystal nanosheet |
Non-Patent Citations (4)
| Title |
|---|
| GUOPING HAN，等: "Size-dependent optical properties and enhanced visible light photocatalytic activity of wurtzite CdSe hexagonal nanoflakes with dominant {001} facets", 《JOURNAL OF ALLOYS AND COMPOUNDS》 * |
| LIGANG MA，等: "Facile method to prepare CdS nanostructure based on the CdTe films", 《APPLIED SURFACE SCIENCE》 * |
| RAYAPATI VENUGOPAL，等: "Surface-Enhanced Raman Scattering and Polarized Photoluminescence from Catalytically Grown CdSe Nanobelts and Sheets", 《J. AM. CHEM. SOC.》 * |
| XIA CAO，等: "Ultrathin CdSe nanosheets: Synthesis and application in simultaneous determination of catechol and hydroquinone", 《ANALYTICA CHIMICA ACTA》 * |
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