CN114709151B - Wafer processing equipment - Google Patents
Wafer processing equipmentInfo
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- CN114709151B CN114709151B CN202210328870.6A CN202210328870A CN114709151B CN 114709151 B CN114709151 B CN 114709151B CN 202210328870 A CN202210328870 A CN 202210328870A CN 114709151 B CN114709151 B CN 114709151B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
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Abstract
本申请公开了一种晶圆处理设备，该设备包括依次连接的装载系统、工艺腔和卸载系统，工艺腔内设至少一个第一工艺空间与至少一个第二工艺空间，其中，第一工艺空间和第二工艺空间分别对应的工艺不同，以工艺处理的先后方向为参考，第一工艺空间与第二工艺空间的顺序为第一工艺空间在前，第二工艺空间在后；或第二工艺空间在前，第一工艺空间在后；第一工艺空间和第二工艺空间分别用于对基底进行处理。通过上述方式，本申请能够在同一个工艺腔中对基底执行两种不同的工艺，进而提高材料的制备效率，降低成本。
The present application discloses a wafer processing device, which includes a loading system, a process chamber, and an unloading system connected in sequence. The process chamber is provided with at least one first process space and at least one second process space, wherein the first process space and the second process space correspond to different processes, and with reference to the order of the process processing, the order of the first process space and the second process space is the first process space in front and the second process space in the back; or the second process space in front and the first process space in the back; the first process space and the second process space are respectively used to process the substrate. In this way, the present application can perform two different processes on the substrate in the same process chamber, thereby improving the material preparation efficiency and reducing costs.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to wafer processing equipment.
Background
The high barrier properties of the separator are one of the properties that many polymeric packaging materials are required to possess. High barrier in the generic term refers to a very low permeability to low molecular weight chemicals such as H 2O、O2, organic compounds, etc. Currently, high barrier films are in different levels of demand in the fields of food and drug packaging, electronic device packaging, solar cell packaging, and the like.
In order to improve the barrier property of the barrier material, the technical means adopted at present mainly comprise multilayer compounding, surface coating, material compounding, surface modification and the like. The method of coating the laminated material on the surface of the polymer and forming a compact coating with excellent barrier property on the surface of the film has the most excellent oxygen and water resistance and good light transmittance of the film, and is regarded as the best means for obtaining the highest barrier property. However, because the existing different coating technologies (such as physical vapor deposition/atomic layer deposition/chemical vapor deposition) generally need independent process chambers, and multiple processes need multiple independent process chambers, the preparation efficiency is low, the equipment investment is extremely expensive, the processing technology difficulty is high, and the equipment has the problem of difficult maintenance under the condition of mass production, so that the product cost is extremely high.
Disclosure of Invention
The application mainly solves the technical problem of providing wafer processing equipment, which combines two processes, can improve the material preparation efficiency and reduce the cost.
In order to solve the technical problems, the application adopts the technical scheme that the wafer processing equipment comprises a loading system, a process cavity and an unloading system which are sequentially connected, wherein at least one first process space and at least one second process space are arranged in the process cavity, the processes corresponding to the first process space and the second process space are different, the sequence of the first process space and the second process space is the first process space in front, the second process space in back, or the second process space in front, and the first process space and the second process space are respectively used for processing a substrate.
The substrate is processed by film growth, heat treatment, doping treatment, plasma treatment and cooling treatment.
The wafer processing equipment further comprises a cleaning device which is arranged in the first process space or the second process space.
Wherein, plasma exists in the process space, and further, the first process space adopts a plasma enhanced atomic layer deposition process, and the second process space adopts a plasma enhanced chemical vapor deposition process.
Wherein, the first process space and the second process space are alternately provided with more than two groups in the sequential direction of the process treatment.
Wherein each first process space adopts the same plasma source, and each second process space adopts the same plasma source.
The wafer processing apparatus further comprises a gas inlet device for delivering gas to the substrate.
The air inlet device comprises a plurality of air exhaust devices, a plurality of groups of first air inlets and a plurality of groups of second air inlets, wherein the first air inlets and the second air inlets are used for conveying different gases to the substrate, and the air exhaust devices are arranged between the first air inlets and the second air inlets and are used for extracting the gases to isolate the first air inlets from the second air inlets.
The loading system and the unloading system are both scroll conveying systems, both ends of the substrate are rolled up and the substrate is erected, the substrate passes through a space between at least two air inlet devices in the process cavity, and the two air inlet devices process both sides of the substrate.
The reel conveying system comprises at least two rollers, wherein the rollers are used for controlling the position of the substrate in the wafer processing equipment.
The wafer processing equipment is also provided with a pretreatment space, wherein the pretreatment space is arranged between the loading system and the first process space and/or between the loading system and the second process space and is used for carrying out temperature pretreatment and/or surface binding energy pretreatment on the substrate.
The wafer processing equipment further comprises a power supply device, wherein the power supply device is used for igniting reaction gas in the first process space and/or the second process space to form plasma.
The wafer processing equipment is provided with an isolation gate valve, wherein the isolation gate valve is arranged between the loading system and the pretreatment space and/or between the first process space and the unloading system and/or between the second process space and the unloading system.
The wafer processing equipment further comprises an air curtain component, wherein the air curtain component is used for forming flowing gas to space two spaces, the sequence of the first process space and the second process space is the front of the first process space, the second process space is the rear of the first process space, the air curtain component is arranged between the pretreatment space and the first process space, and/or is arranged between the first process space and the second process space, and/or is arranged between the second process space and the unloading system, or the sequence of the first process space and the second process space is the front of the second process space, the first process space is the rear of the first process space, and/or is arranged between the second process space and the first process space, and/or is arranged between the first process space and the unloading system.
The wafer processing apparatus further includes a heating assembly for controlling a temperature of the substrate.
The application has the advantages that, unlike the prior art, the application combines two treatment processes in the same wafer treatment equipment, namely, at least one first process space and at least one second process space are arranged in the process cavity, thereby avoiding the pretreatment processes of substrate transmission, temperature control and the like among a plurality of equipment, effectively improving the treatment efficiency and reducing the cost.
Drawings
FIG. 1 is a schematic diagram of an embodiment of a wafer processing apparatus according to the present application;
FIG. 2 is a schematic view of a portion of a first process space of a wafer processing apparatus according to the present application;
FIG. 3 is a schematic view of a portion of a second process space of the wafer processing apparatus according to the present application;
FIG. 4 is a simplified schematic diagram of an embodiment of a wafer processing apparatus according to the present application;
Fig. 5 is a simplified schematic diagram of another embodiment of the wafer processing apparatus of the present application.
Detailed Description
In order to make the objects, technical solutions and effects of the present application clearer and more obvious, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
It should be noted that, in the embodiments of the present application, there is a description of "first", "second", etc., which are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be considered to be absent and not within the scope of protection claimed in the present application.
For a better understanding of the present application, a wafer processing apparatus according to the present application will be described in more detail with reference to the accompanying drawings and specific examples.
Because the existing different coating technologies (such as physical vapor deposition/atomic layer deposition/chemical vapor deposition) and the like have different requirements (such as pressure, temperature and the like) on the process environment and are difficult to integrate, the equipment investment is extremely expensive, the processing technology difficulty is high, and the equipment has the problem of difficult maintenance under the condition of mass production, so that the product cost is extremely high.
In summary, the application provides wafer processing equipment, which comprises a loading system, a process chamber and an unloading system which are sequentially connected, wherein at least one first process space and at least one second process space are arranged in the process chamber, the processes corresponding to the first process space and the second process space are different, the sequence of the first process space and the second process space is the first process space in front, the second process space in behind, or the second process space in front, and the first process space and the second process space can be used for processing a substrate respectively. The surface of the substrate may be subjected to film growth and/or the substrate may be subjected to a heat treatment and/or doping treatment.
Optionally, a plasma is present in the process chamber, e.g., a plasma enhanced atomic layer deposition process is used in the first process chamber and a plasma enhanced chemical vapor deposition process is used in the second process chamber. In the process of film growth on the surface of the substrate, the wafer processing equipment can combine two film growth processes, the substrate can firstly pass through a first process space, a first film layer grows on the surface of the substrate, then a second film layer grows on the grown first film layer through a second process space, continuous film growth can be realized, two different film layers are prepared in one process cavity, the film growth efficiency can be effectively improved, a plurality of first process spaces and second process spaces are arranged, a plurality of first film layers and second film layers can be alternately grown on the surface of the substrate, the thickness of the film layers can be enhanced, and then the water resistance and the oxygen resistance of the film layers can be improved.
Referring to fig. 1, fig. 1 is a schematic structural diagram of an embodiment of a wafer processing apparatus according to the present application.
The wafer processing apparatus 10 comprises a loading system 1, a process chamber 2 and an unloading system 3 which are sequentially connected, wherein at least one first process space 22 and at least one second process space 23 are arranged in the process chamber 2, wherein the processes corresponding to the first process space and the second process space are respectively different, and the sequence of the first process space 22 and the second process space 23 is that the first process space 22 is in front, the second process space 23 is in back, or the second process space 23 is in front, and the first process space 22 is in back by taking the sequence direction of process treatment as a reference.
The first process space 22 and the second process space 23 are used for processing the substrate 20, and specifically, may be used for performing film growth, heat treatment, doping treatment, plasma treatment, and cooling treatment on the surface of the substrate 20.
In one embodiment, the wafer processing apparatus 10 may be used for surface film growth to a substrate, and the process chamber 2 of the wafer processing apparatus 10 includes a first process space 22 and a second process space 23. The first process space 22 adopts a plasma enhanced atomic layer deposition process, the second process space 23 adopts a plasma enhanced chemical vapor deposition process, and the sequence of the first process space 22 and the second process space 23 is that the first process space 22 is in front, the second process space 23 is behind, or the second process space 23 is in front, and the first process space 22 is behind. In this embodiment, the growth sequence is used as a reference, the arrangement sequence of the first process space 22 and the second process space 23 is that the first process space 22 is in front, the second process space 23 is in back, the substrate 20 firstly passes through the first process space 22, grows a first film layer on the surface of the substrate, and then passes through the second process space, and grows a second film layer on the surface of the first film layer. It will be appreciated that in other embodiments, the second process space 23 may be located before, and the first process space 22 may be located after, the film growth may be performed in the second process space 23, and then the film growth may be performed in the first process space 22. In this way, multiple layers of different films can be grown in the same cavity, i.e. a stacked structure can be conveniently formed in one cavity, such as forming a first film layer, a second film layer, a first film layer, a second film layer, a first film layer, a laminate structure that circulates in this manner, the film growth efficiency is effectively improved. In this case, PEALD and PECVD are combined together, and the PEALD and PECVD are respectively and alternately processed, so that growth of a structure with different layers is realized, and two different coating materials are sequentially and alternately prepared to form a composite film layer by adopting PEALD and PECVD coating.
In another embodiment, the process chamber 2 of the wafer processing apparatus 10 includes two first process spaces 22 and two second process spaces 23, wherein the first process spaces 22 and the second process spaces 23 may be arranged in any manner. Specifically, in an embodiment, the process chamber 2 includes two first process spaces 22 and two second process spaces 23, the first process spaces 22 adopt a plasma enhanced atomic layer deposition process, the second process spaces 23 adopt a plasma enhanced chemical vapor deposition process, the growth direction is taken as a reference, the 4 process spaces can be sequentially arranged in the order of the first process spaces 22, the second process spaces 23, the first process spaces 22 and the second process spaces 23, or can be sequentially arranged in the order of the first process spaces 22, the second process spaces 23 and the first process spaces 22, and the positions of the process spaces can be adjusted as required without limitation.
The first process space 22 and the second process space 23 may be separate cavities, or one cavity may be divided into a plurality of process spaces. Alternatively, the first process space 22 employs a plasma enhanced atomic layer deposition process (peald) and the second process space 32 employs a plasma enhanced chemical vapor deposition process (pecvd). The plasma enhanced atomic layer deposition process is a process for preparing a high-quality ultrathin film at low temperature, the film prepared by the process has excellent performance, the deposition temperature of the process is low, the process condition is flexible to control, and the plasma enhanced chemical vapor deposition process is a technology for promoting chemical reaction to be carried out on the surface or near-surface space of a substrate by using plasma activated reaction gas to generate a solid film, and can rapidly grow a thicker film layer at low temperature, fill the defects of a flexible substrate and serve as a buffer layer between compact films. Therefore, the two processes are combined, and at least the following advantages are achieved:
1) The defect of a single membrane layer can be improved, and the performance of the membrane is improved;
2) Because the first process space 22 and the second process space 23 are in the same equipment and are communicated with each other, the film growing in one process space does not need to undergo external cooling and other processes, and can enter the other process space to grow in the film growing state, and the other film is directly formed on the surface of the previous film, so that the growing processes of the two films are basically integrated, no obvious limit is reserved between the two films, the structural characteristics of the film layers are greatly optimized, and the film growing time is greatly shortened;
3) The two processes have similar temperature, so the two processes can share the same set of temperature control system, and the cost is low and the control is simple;
4) Both processes utilize plasma enhanced techniques, so the equipment design, option, installation and maintenance are relatively simple.
Since the first process space 22 and the second process space 23 are formed by different film growth processes, it is necessary to separate the first process space 22 from the second process space 23, and in order not to affect the transportation of the substrate and the film growth, the first process space 22 and the second process space 23 may be separated by a gas.
The multilayer diaphragm produced by the method has extremely low transmittance to low molecular weight substances, has good water-oxygen barrier property, and is widely applied to the fields of foods, medicines, electronic devices and the like.
In other embodiments, the wafer processing apparatus 10 may perform heat treatment on the substrate, and in particular, a heating apparatus through which the heat treatment is performed may be provided at the wafer processing apparatus 10.
Referring to fig. 2, fig. 2 is a schematic view of a portion of the first process space 22. An air inlet means, which is defined herein as a first air inlet means 221, is provided in the first process space 22. The first gas inlet 221 may be disposed at the bottom of the first process space 22 and/or at the top of the first process space 22 for delivering gas to the substrate 20. If film growth is required on both sides of the substrate 20, the first air inlet 221 may be disposed at both the bottom and the top of the first process space 22, and if film growth is required on only one side of the substrate 20, the first air inlet 221 may be disposed at the bottom or the top of the first process space 22. Specifically, during the actual film growth process, the position of the first gas inlet 221 may be fixed, the movement of the substrate 20 may be controlled, or the movement of the substrate 20 may be fixed, and the movement of the first gas inlet 221 may be controlled, so that the substrate 20 is uniformly contacted with the reaction gas.
The first air intake device 221 includes a plurality of first air extraction devices 2213, a plurality of first air inlets 2211 and a plurality of second air inlets 2212. The first gas inlet 2211 and the second gas inlet 2212 are used for delivering different reaction gases to the substrate 20, and the first gas exhaust device 2213 is arranged between the first gas inlet 2211 and the second gas inlet 2212 and is used for exhausting the gases to isolate the first gas inlet 2211 from the second gas inlet 2212. Specifically, in the first process space 22, the first gas inlet 221 includes a first gas inlet 2211 and a second gas inlet 2212, and the first gas inlet 221 delivers the reaction gas to the substrate 20 in a pulse manner. The first gas inlet 2211 inputs a reaction gas a to the substrate 20, the gas a may include a carrier gas and a chemical reaction source a, the second gas inlet 2212 inputs a reaction gas B to the substrate 20, the gas B may include a carrier gas and a chemical reaction source B, the substrate 20 first passes through the first gas inlet 2211 to adsorb the reaction gas a, and then passes through the second gas inlet 2212 to adsorb the reaction gas B, and the reaction gas a and the reaction gas B react on the surface of the substrate 20 to generate new substances to be deposited on the surface of the substrate 20. A first air extracting device 2213 is further disposed between the first air inlet 2211 and the second air inlet 2212, and the first air extracting device 2213 extracts the reaction gas a delivered by the first air inlet 2211 and the reaction gas B delivered by the second air inlet 2212, so as to prevent the reaction gas a and the reaction gas B from reacting in the first process space 22. A first air inlet 2211, a second air inlet 2212 and a first air exhaust device 2213 form a structural unit, and a plurality of structural units may be disposed in the first process space 22 so that the substrate 20 is continuously contacted with the reaction gas a and the reaction gas B during transportation. A first air extractor 2213 is also arranged between the two structural units for isolating the structural units.
Referring to fig. 3, fig. 3 is a schematic view of a portion of the second process space. In the second process space 23, an air inlet device is likewise provided, which is defined herein as second air inlet device 231. The second gas inlet 231 may also be disposed at the bottom of the second process space 23 and/or at the top of the second process space 23 for delivering gas to the substrate 20. If film growth is required on both sides of the substrate 20, the second air inlet device 231 may be disposed at both the bottom and the top of the second process space 23, and if film growth is required on only one side of the substrate 20, the second air inlet device 231 may be disposed at the bottom or the top of the second process space 23.
The second gas inlet device 231 includes a mixed gas inlet 2311 and a second gas exhaust device 2312, and the mixed gas inlet 2311 delivers more than two kinds of reaction gases, and a plurality of mixed gas inlets 2311 may be provided to allow the substrate 20 to contact the reaction gases a plurality of times. The second pumping device 2312 is disposed between the two mixing inlets 2311 to pump out the excess reactant gases in the second process space 23.
Referring to fig. 2 and 3 in combination, a power supply device may be further disposed in the process chamber 2 of the wafer processing apparatus 10. The power supply device comprises a power supply, a matcher 25 and a connecting device, wherein the power supply can be an RF (Radio frequency) power supply, can also be an RPS power supply (Redundant Power System, redundant power supply system), and can be arranged at any position outside the process cavity, can also be arranged at any position inside the process cavity, is not limited herein, the matcher 25 is connected with the power supply and is used for directionally starting related chemical sources, the matcher is arranged inside the process cavity, specifically, the matcher 25 can be arranged at the bottoms of the first process space 22 and the second process space 23, and/or at the tops of the first process space 22 and the second process space 23 and is used for directionally starting reaction gases to form plasmas. In an embodiment, a power supply device is disposed in the process chamber 2 of the wafer processing apparatus 10, a power supply in the power supply device is disposed outside the process chamber, the matcher 25 is disposed at the top of the first process space 22 and the second process space 23, the gas sprayed from the first gas inlet 221 in the first process space 22 and the gas sprayed from the second gas inlet 231 in the second process space 23 can contact the matcher 25, and the matcher 25 is used for forming plasma by directional glow-starting reaction gas.
It is understood that the first process space and the second process space according to the present application may share one power supply device, or may use different power supply devices. The specific setting mode can be set according to the production requirement, and is not limited herein.
Referring to fig. 1 and 4 in combination, fig. 4 is a simplified schematic structure of a wafer processing apparatus.
The process chamber 2 of the wafer processing apparatus 10 may further include a pretreatment space 21, which may also be a separate chamber or a space isolated from the process chamber, and the pretreatment space 21 may be disposed before the first process space 22 or the second process space 23, where the substrate 20 may be subjected to a temperature pretreatment and/or a surface energy pretreatment by the pretreatment space 21 before the film growth is performed, with reference to the growth sequence. Specifically, in one embodiment, the heating assembly 26 is disposed in the pretreatment space 21, the temperature of the heating assembly 26 is set according to actual needs, the temperature of the substrate 20 is controlled by adjusting the temperature of the heating assembly 26, and/or an ozone generator is connected to the outside of the pretreatment space 21 of the wafer processing apparatus 10 to introduce ozone into the pretreatment space 21, the surface bonding energy of the substrate after absorbing ozone is improved, and the surface bonding energy of the substrate is improved, so that the adhesion of the thin film can be improved.
The process chamber 2 of the wafer processing apparatus 10 may further include a heating assembly 26, the heating assembly 26 may be disposed at the bottom or top of the first process space 22, below the air inlet 24 when the heating assembly is disposed at the bottom of the first process space 22, and above the air inlet 24 when the heating assembly is disposed at the top of the first process space 22. Similarly, the heating assembly 26 may also be disposed at the bottom of the pretreatment space 21 and the bottom of the second process space 23, and/or at the top of the pretreatment space 21 and the top of the second process space 23. The temperature of the heating element 26 is adjusted according to the requirements of the process conditions during film growth. In the actual production process, if the film growth process is performed at normal temperature, the heating element 26 may not be provided.
The wafer processing apparatus 10 further includes a loading system 1 and an unloading system 3, both of which are reel transfer systems, which roll up both ends of the substrate 20 and set up the substrate 20, and the substrate 20 passes through a space between at least two air inlet devices in the process chamber 2, which perform film growth on both sides of the substrate 20. The loading system 1 and the unloading system 3 are arranged according to the substrate 20, in particular, in one embodiment, the substrate 20 is a flexible substrate. At this time, the loading system 1 and the unloading system 3 may be two drums, and a transition space is further provided in the loading system 1, for adjusting the position and tension of the flexible substrate, so as to prevent the flexible substrate from shifting in the moving process, and the flexible substrate is wound on the two drums, and is driven to move by the rotation of the two drums. In another embodiment, the substrate 20 is a glass substrate, the loading system 1 and the unloading system 3 are rollers, rubber rings can be arranged on the rollers, the glass substrate is driven to move by friction force between the rubber rings and the glass substrate during rotation of the rollers, a loading space and a discharging space are respectively arranged in the loading system 1 and the unloading system 3, and the glass substrate is conveyed to the discharging space of the unloading system 3 through the rollers after passing through the loading space of the loading system 1. In another embodiment, at least two rollers may be provided in each of the loading system 1 and the unloading system 3, with the rollers controlling the position of the substrate in the wafer processing apparatus.
In the above embodiment, the process chamber 2 of the wafer processing apparatus 10 includes the pretreatment space 21, the first process space 22 and the second process space 23, the length of the process chamber 2 is set according to the requirement in actual production, and the width of the process chamber 2 may be 1 to 2.5m, preferably may be 1.2 to 2m.
The first process space 22 and the second process space 23 may also be provided with cleaning means (not shown in the figures) which may be integrated with the air inlet means 24 or may be separate means. The cleaning device may be provided at the bottom of the first process space 22 and the second process space 23 and/or at the top of the first process space 22 and the second process space 23 for cleaning the first process space 22 and the second process space 23. In an embodiment, the cleaning device and the air inlet device are integrated, the air inlet of the air inlet device 24 can be the same as the air inlet of the cleaning device, and in-situ cleaning can be performed at this time, and only the reaction gas of the air inlet needs to be replaced by cleaning gas. In another embodiment, the purging device is the same as the air intake device, but the air intake of the purging device is different from the air intake of the air intake device 24. In other embodiments, the cleaning device may be a separate device.
The process of spraying inert gas from the cleaning device to flush the process space can be performed after the film growth is finished, or can be performed in a film growth gap. Specifically, if the substrate 20 is a flexible substrate, the cleaning device may spray inert gas after the film growth is completely completed, and if the substrate 20 is a flexible substrate, the cleaning device may spray inert gas in a gap between two substrates 20 entering and exiting the process chamber, and the inert gas spraying time is set according to the needs, which is not limited herein.
The cleaning device is arranged in the process cavity, so that the condition that the coating in the cavity is cleaned by detaching and knocking the cavity in a large area can be avoided, the cavity can be cleaned in time, and the preparation efficiency is improved.
With continued reference to fig. 1, the wafer processing apparatus 10 may further include an air curtain assembly 4 for forming a flowing gas to space two spaces, the order of the first process space 22 and the second process space 23 being the first process space 22 in front, the second process space 23 being the second process space 23 in back, the air curtain assembly 4 being disposed between the pretreatment space 21 and the first process space 22, and/or being disposed between the first process space 11 and the second process space 23, and/or being disposed between the second process space 23 and the unloading system 3, or the order of the first process space 22 and the second process space 23 being the second process space 23 in front, the first process space 22 being the first process space 22 in back, and/or being disposed between the second process space 23 and the first process space 22, and/or being disposed between the first process space 22 and the unloading system 3, with the order of the process direction being the first process space 22 in front.
Specifically, if the pretreatment space 21 is connected to the first process space 22, the air curtain assembly 4 may be disposed between the pretreatment space 21 and the first process space 22, and if the pretreatment space 21 is connected to the second process space 23, the air curtain assembly 4 may be disposed between the pretreatment space 21 and the second process space 23. The process space is similar to the unloading system 3 and will not be described in detail here. The air curtain component 4 is used for blocking each space, so that different gases in different spaces are prevented from being mixed, and the film growth effect is prevented from being influenced. The gas used in the gas curtain assembly 4 may be an inert gas or other gases which do not participate in the reaction.
Further, the wafer processing apparatus 10 may further include an isolation gate valve 5, the isolation gate valve 5 being disposed between the loading system 1 and the preprocessing space 21, and/or between the first process space 22 and the unloading system 3, and/or between the second process space 23 and the unloading system 3, for isolating the loading system 1, the process chamber 2, and the unloading system 3.
For different substrates 20 requiring film growth, the state of the isolation gate valve 5 is different, and the isolation gate valve 5 can be always in an open state, or the isolation gate valve 5 can be closed after the substrate 20 enters the process chamber. For example, in one embodiment, the substrate 20 is a flexible substrate, the isolation gate valve 5 is always opened during the transfer process, and in another embodiment, the substrate 20 is a non-flexible substrate (such as a glass substrate), the isolation gate valve 5 is closed after the non-flexible substrate enters the process chamber, and the isolation gate valve 5 is opened after the film growth is completed.
In addition, the wafer processing apparatus 10 provided by the present invention is in a vacuum state in the whole film growth process, and the vacuum pumps are respectively connected to the outside of the loading system 1, the process chamber 2 and the unloading system 3 of the wafer processing apparatus 10, specifically, the vacuum pumps may be disposed outside each process space contained in the loading system 1, the unloading system 3 and the process chamber 2, and the vacuum pumps are used to pump the gases in each process system and each process space of the wafer processing apparatus 10, so that the wafer processing apparatus 10 is in a vacuum state.
Referring to fig. 1-3 in combination, when the wafer processing apparatus 10 provided by the present invention is used for film growth, a substrate 20 sequentially passes through a loading system 1, a pretreatment space 21 in a process chamber 2, a first process space 22 and a second process space 23 in the process chamber, and finally reaches an unloading system 3 to complete film growth.
Specifically, in one embodiment, the substrate 20 is a flexible substrate, the reactive gas source a of the first process space 22 is a mixture of diisopropylamine silane and argon, the reactive gas source B is oxygen, and the reactive gas source of the second process space 23 is a mixture of silane and ammonia. The flexible substrate enters the loading system 1, is in a drivable state through film penetrating and connecting, a vacuum pump connecting the loading system 1, the process chamber 2 and the unloading system 3 of the wafer processing equipment 10 is started, and a heating component 26 of a pretreatment space 21, a first process space 22 and a second process space 23 in the process chamber 2 is started, so that the wafer processing equipment 10 achieves the pressure and the temperature required by the film growing process, wherein the pressure is required to reach 40Pa, and the temperature is required to reach 60 ℃. The isolation gate valve 5 in the wafer processing apparatus 10 is opened, the loading system 1 is started, the flexible substrate is controlled to move to the pretreatment space 21 first, and after the pretreatment space 21 reaches 60 ℃, the flexible substrate passes through the air curtain assembly 4 between the pretreatment space 21 and the first process space 22 and moves to the first process space 22. With reference to the direction in which the flexible substrate is subjected to film growth, the source of reaction gas a is in front and the source of reaction gas B is in back in the first gas inlet 221 of the first process space 22, and the flexible substrate is contacted with the source of reaction gas a first and then with the source of reaction gas B. A plurality of first gas inlet devices 221 are disposed in the first process space 22, and the flexible substrate is contacted with the reactive gas source a plurality of times to form a film layer having a certain thickness on the surface thereof. The flexible substrate continues to move, passes through the air curtain assembly 4 between the first process space 22 and the second process space 23, enters the second process space 23, the second process space 23 is provided with a plurality of second air inlet devices 231, and the flexible substrate continuously adsorbs the reactive gas source sprayed out by the second air inlet devices 231 in the moving process. Finally, the flexible substrate enters the unloading system 3 through the air curtain component 4 and the isolation gate valve 5 between the second process space 23 and the unloading system 3, and after cooling, the film growth is completed. After the wafer processing equipment 10 is used for completing the film growth, the grown film layer is detected to be uniform.
Referring to fig. 5, fig. 5 is a simplified schematic diagram of a wafer processing apparatus according to another embodiment of the present application. For the power supply and the plasma generating device, the frequency of the plasma source in the plasma atomic layer deposition process is completely different from that of the plasma source in the plasma enhanced chemical vapor deposition process, when the same plasma source is adopted, the existing plasma source is required to be greatly changed, the change often cannot embody economy, and in order to save the cost of equipment, referring to fig. 5, when the first process space 22 adopts the plasma enhanced atomic layer deposition process, the second process space 23 adopts the plasma enhanced chemical vapor deposition process, and when the first process space 22 and the second process space 23 adopt more than two groups of plasma sources RF1 are adopted in each first process space 22 and each second process space 23 adopts the same plasma source RF2 in the process treatment sequence direction alternately.
The foregoing description is only of embodiments of the present application, and is not intended to limit the scope of the application, and all equivalent structures or equivalent processes using the descriptions and the drawings of the present application or directly or indirectly applied to other related technical fields are included in the scope of the present application.
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| JPH10256371A (en) * | 1997-03-14 | 1998-09-25 | Sony Corp | Semiconductor device manufacturing method and semiconductor manufacturing apparatus |
| CN113122827A (en) * | 2021-03-19 | 2021-07-16 | 苏州晟成光伏设备有限公司 | Equipment and process for preparing back-passivated solar cell |
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| KR101580968B1 (en) * | 2013-12-27 | 2015-12-30 | 엘아이지인베니아 주식회사 | Apparatus for processing flexible substrate and method of processing flexible substrate using the same |
| CN214176054U (en) * | 2020-12-25 | 2021-09-10 | 湖南红太阳光电科技有限公司 | Integrated equipment for preparing silicon oxide and doped polycrystalline silicon |
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| JPH10256371A (en) * | 1997-03-14 | 1998-09-25 | Sony Corp | Semiconductor device manufacturing method and semiconductor manufacturing apparatus |
| CN113122827A (en) * | 2021-03-19 | 2021-07-16 | 苏州晟成光伏设备有限公司 | Equipment and process for preparing back-passivated solar cell |
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