CN114709151A - Wafer processing equipment - Google Patents
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- CN114709151A CN114709151A CN202210328870.6A CN202210328870A CN114709151A CN 114709151 A CN114709151 A CN 114709151A CN 202210328870 A CN202210328870 A CN 202210328870A CN 114709151 A CN114709151 A CN 114709151A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
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Abstract
The application discloses wafer processing equipment, which comprises a loading system, a process chamber and an unloading system which are sequentially connected, wherein at least one first process space and at least one second process space are arranged in the process chamber, the first process space and the second process space respectively correspond to different processes, the sequence of the first process space and the second process space is that the first process space is in front and the second process space is in back by taking the process processing sequence direction as reference; or the second process space is before and the first process space is after; the first process space and the second process space are respectively used for processing the substrate. Through the mode, the substrate can be subjected to two different processes in the same process cavity, so that the preparation efficiency of the material is improved, and the cost is reduced.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a wafer processing device.
Background
The high barrier properties of the separator are one of the characteristics that many polymeric packaging materials are required to possess. High barrier in the generic term means to low molecular weight chemicals, such as H2O、O2Organic compounds, etc. have very low permeability. At present, the high-barrier film has different levels of requirements in the fields of food and medicine packaging, electronic device packaging, solar cell packaging and the like.
In order to improve the barrier property of the barrier material, the currently adopted technical means mainly comprise multilayer compounding, surface coating, material compounding, surface modification and the like. The method for coating the laminated material on the surface of the polymer and forming the compact coating with excellent barrier property on the surface of the film has the most excellent oxygen and water resistance and good light transmission of the film, and is regarded as the best means for obtaining the highest-level barrier property. However, different coating technologies (such as physical vapor deposition/atomic layer deposition/chemical vapor deposition) generally require independent process chambers, and multiple processes require multiple independent process chambers, so that the preparation efficiency is low, the equipment investment is extremely expensive, the processing technology difficulty is high, and the equipment has the problem of difficult maintenance under the condition of large-batch mass production, which results in extremely high product cost.
Disclosure of Invention
The technical problem that this application mainly solved provides a wafer treatment facility, combines two kinds of technologies, can improve material preparation efficiency, reduce cost.
In order to solve the technical problem, the technical scheme adopted by the application is as follows: providing wafer processing equipment, wherein the wafer processing equipment comprises a loading system, a process chamber and an unloading system which are sequentially connected, and at least one first process space and at least one second process space are arranged in the process chamber; the first process space and the second process space respectively correspond to different processes, the sequence of the first process space and the second process space is that the first process space is in front and the second process space is in back by taking the process treatment sequence direction as reference; or the second process space is before and the first process space is after; the first process space and the second process space are respectively used for processing the substrate.
Wherein processing the substrate comprises: and carrying out film growth, heat treatment, doping treatment, plasma treatment and cooling treatment on the surface of the substrate.
The wafer processing equipment further comprises a cleaning device, and the cleaning device is arranged in the first process space or the second process space.
And plasma exists in the space during the treatment process, further, the first process space adopts a plasma enhanced atomic layer deposition process, and the second process space adopts a plasma enhanced chemical vapor deposition process.
Wherein, the first process space and the second process space are alternately provided with more than two groups in the process treatment sequential direction.
Wherein, each first process space adopts the same plasma source, and each second process space adopts the same plasma source.
Wherein the wafer processing equipment further comprises a gas inlet device which is used for delivering gas to the substrate.
The gas inlet device comprises a plurality of gas extraction devices and a plurality of groups of first gas inlets and second gas inlets, and the first gas inlets and the second gas inlets are used for conveying different gases to the substrate; the air extracting device is arranged between the first air inlet and the second air inlet and used for extracting air to isolate the first air inlet from the second air inlet.
The loading system and the unloading system are both reel transmission systems, two ends of the substrate are rolled up and the substrate is erected, the substrate passes through a space between the at least two air inlet devices in the process cavity, and the two surfaces of the substrate are processed by the two air inlet devices.
Wherein the spool transfer system comprises at least two rollers; the rollers are used to control the position of the substrate in the wafer processing apparatus.
The wafer processing equipment is also provided with a pretreatment space, and the pretreatment space is arranged between the loading system and the first process space and/or between the loading system and the second process space and is used for carrying out temperature pretreatment and/or surface binding energy pretreatment on the substrate.
The wafer processing equipment also comprises a power supply device; the power supply apparatus is configured to ignite a reactant gas to form a plasma in the first process space and/or the second process space.
Wherein, an isolation gate valve is arranged in the wafer processing equipment; an isolation gate valve is disposed between the loading system and the pre-processing space, and/or between the first process space and the unloading system, and/or between the second process space and the unloading system.
The wafer processing equipment also comprises an air curtain component, wherein the air curtain component is used for forming flowing gas and separating two spaces; by taking the process treatment sequence direction as reference, the sequence of the first process space and the second process space is that the first process space is in front, the second process space is in back, and the air curtain component is arranged between the pretreatment space and the first process space; and/or, disposed between the first process space and the second process space; and/or, disposed between the second process space and the unloading system; or, by taking the process treatment sequence direction as reference, the sequence of the first process space and the second process space is that the second process space is in front, the first process space is in back, and the air curtain component is arranged between the pretreatment space and the second process space; and/or, disposed between the second process space and the first process space; and/or between the first process space and the unloading system.
Wherein the wafer processing apparatus further comprises a heating assembly for controlling the temperature of the substrate.
The wafer processing equipment has the beneficial effects that the wafer processing equipment is different from the prior art, two processing technologies are combined in the same wafer processing equipment, namely, at least one first process space and at least one second process space are arranged in the process cavity, the pretreatment processes of substrate transmission, temperature control and the like among a plurality of equipment are omitted, the processing efficiency can be effectively improved, and the cost is reduced.
Drawings
FIG. 1 is a schematic diagram of a wafer processing apparatus according to an embodiment of the present disclosure;
FIG. 2 is a schematic view of a portion of a first processing space of a wafer processing apparatus according to the present disclosure;
FIG. 3 is a schematic view of a portion of a second process space of the wafer processing apparatus provided herein;
FIG. 4 is a simplified block diagram of one embodiment of a wafer processing apparatus according to the present disclosure;
FIG. 5 is a simplified block diagram of another embodiment of a wafer processing apparatus according to the present application.
Detailed Description
In order to make the purpose, technical solution and effect of the present application clearer and clearer, the technical solution in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are a part of the embodiments of the present application, but not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that, in the embodiments of the present application, there are descriptions related to "first", "second", etc., and the descriptions of "first", "second", etc. are only used for descriptive purposes and are not to be interpreted as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present application.
For a better understanding of the present application, a wafer processing apparatus as provided herein will be described in more detail with reference to the accompanying drawings and specific embodiments.
Because the existing different coating technologies (such as physical vapor deposition/atomic layer deposition/chemical vapor deposition) have different requirements (pressure, temperature and the like) on the process environment and are difficult to integrate, the equipment investment is extremely expensive, the processing technology difficulty is high, and the equipment has the problem of difficult maintenance under the condition of large-batch mass production, so that the product cost is extremely high.
In summary, the present application provides a wafer processing apparatus, which includes a loading system, a process chamber and an unloading system connected in sequence, wherein the process chamber is provided with at least one first process space and at least one second process space; the first process space and the second process space respectively correspond to different processes, the sequence of the first process space and the second process space is that the first process space is in front and the second process space is in back by taking the process treatment sequence as reference; or the second process space is before and the first process space is after; the first process space and the second process space may be used to process a substrate, respectively. Specifically, the surface of the substrate may be subjected to thin film growth, and/or the substrate may be subjected to heat treatment and/or doping treatment.
Optionally, a plasma is present in the space during the processing, for example, the first process space employs a plasma enhanced atomic layer deposition process, and the second process space employs a plasma enhanced chemical vapor deposition process. In the process of carrying out film growth on the surface of a substrate, the wafer processing equipment can combine two film growth processes, the substrate can firstly pass through a first process space, a first film layer grows on the surface of the substrate, and then passes through a second process space, a second film layer grows on the grown first film layer, continuous film growth can be realized, two different film layers are prepared in a process chamber, the film growth efficiency can be effectively improved, a plurality of first process spaces and second process spaces are arranged, a plurality of first film layers and second film layers can alternately grow on the surface of the substrate, the thickness of the film layers can be enhanced, and the water resistance and the oxygen resistance of the film layers are further improved.
Referring to fig. 1, fig. 1 is a schematic structural diagram of an embodiment of a wafer processing apparatus according to the present disclosure.
The wafer processing equipment 10 comprises a loading system 1, a process chamber 2 and an unloading system 3 which are sequentially connected, wherein at least one first process space 22 and at least one second process space 23 are arranged in the process chamber 2, the first process space and the second process space respectively correspond to different processes, the sequence of the first process space 22 and the second process space 23 is that the first process space 22 is in front and the second process space 23 is in back by taking the process processing sequence as reference; or the second process space 23 is before and the first process space 22 is after.
The first process space 22 and the second process space 23 are respectively used for processing the substrate 20, and specifically, can be used for performing film growth, heat treatment, doping treatment, plasma treatment, and temperature reduction treatment on the surface of the substrate 20.
In one embodiment, the wafer processing apparatus 10 may be used for film growth on a surface of a substrate, and the process chamber 2 of the wafer processing apparatus 10 includes a first process space 22 and a second process space 23. Wherein, the first process space 22 adopts a plasma enhanced atomic layer deposition process, the second process space 23 adopts a plasma enhanced chemical vapor deposition process, the sequence of the first process space 22 and the second process space 23 is that the first process space 22 is in front and the second process space 23 is in back by taking the growth sequence as reference; or the second process space 23 is before and the first process space 22 is after. In this embodiment, with reference to the growth direction, the arrangement order of the first process space 22 and the second process space 23 is that the first process space 22 is in front, the second process space 23 is behind, the substrate 20 firstly passes through the first process space 22, a first film layer grows on the surface of the substrate, and then passes through the second process space, and a second film layer grows on the surface of the first film layer. It is understood that in other embodiments, the second process space 23 may be located before the first process space 22, and the thin film growth may be performed in the second process space 23 and then in the first process space 22. Through the mode, multiple layers of different films can grow in the same cavity, namely, a laminated structure can be conveniently formed in one cavity, for example, a first film layer, a second film layer, a first film layer and a second film layer are formed, and the laminated structure can also be formed, so that the efficiency of film growth is effectively improved. Under the condition, PEALD and PECVD are combined together, alternate treatment is respectively carried out through PEALD and PECVD, and therefore growth of a laminated structure with different layers is achieved, and two different coating materials are sequentially and alternately prepared through PEALD and PECVD coating to form a composite thin film layer.
In another embodiment, the process chamber 2 of the wafer processing apparatus 10 comprises two first process spaces 22 and two second process spaces 23, wherein the first process spaces 22 and the second process spaces 23 may be arranged in any manner. Specifically, in an embodiment, the process chamber 2 includes two first process spaces 22 and two second process spaces 23, the first process space 22 employs a plasma enhanced atomic layer deposition process, the second process space 23 employs a plasma enhanced chemical vapor deposition process, with reference to the growth direction, the 4 process spaces may be sequentially arranged according to the sequence of the first process space 22, the second process space 23, the first process space 22, and the second process space 23, or sequentially arranged according to the sequence of the first process space 22, the second process space 23, and the first process space 22, and the positions of the process spaces may be adjusted as needed, which is not limited herein.
The first process space 22 and the second process space 23 may be separate cavities, or one cavity may be divided into a plurality of process spaces. Optionally, the first process space 22 employs a plasma enhanced atomic layer deposition process (peald) and the second process space 32 employs a plasma enhanced chemical vapor deposition process (pecvd). The plasma enhanced atomic layer deposition process is a process for preparing a high-quality ultrathin film at low temperature, the film prepared by the process has excellent performance, the deposition temperature of the process is low, and the process condition is flexibly controlled; the plasma enhanced chemical vapor deposition process is a technology for activating reaction gas by plasma to promote chemical reaction on the surface or near-surface space of a matrix to generate a solid film, can rapidly grow a thicker film layer at low temperature, and can be used for filling the defects of a flexible substrate and serving as a buffer layer between compact films. Therefore, the two processes are combined, and at least the following advantages are achieved:
1) the defect of a single film layer can be improved, and the performance of the diaphragm is improved;
2) because the first process space 22 and the second process space 23 are communicated in the same equipment, the film growing in one process space does not need to undergo the processes of external cooling and the like, and can enter the other process space to grow another film in the growth state of the film, and the other film is directly formed on the surface of the former film, so that the growth processes of the two films are basically integrated, no obvious boundary is formed between the two films to be mutually blended, the structural characteristics of the films can be greatly optimized, and the growth time of the films can be greatly shortened;
3) the temperature required by the two processes is similar, so that the same temperature control system can be shared, the cost is low, and the control is simple;
4) both processes utilize plasma enhanced technology, and therefore the equipment design, selection, installation and maintenance are relatively simple.
Since the first process space 22 and the second process space 23 use different film growth processes, it is necessary to separate the first process space 22 from the second process space 23, and in order not to affect the substrate transportation and the film growth, the first process space 22 and the second process space 23 may be separated using a gas.
The multilayer diaphragm produced by the method has extremely low transmittance to low molecular weight substances and better water and oxygen barrier property, and is widely applied to the fields of food, medicines, electronic devices and the like.
In other embodiments, the wafer processing apparatus 10 may perform a heat treatment on the substrate, and specifically, a heating apparatus may be provided in the wafer processing apparatus 10, and the heat treatment may be performed by the heating apparatus.
Referring to fig. 2, fig. 2 is a schematic view of a portion of the first process space 22. An air inlet means, here defined as a first air inlet means 221, is provided in the first process space 22. The first gas inlet 221 may be disposed at the bottom of the first process space 22 and/or at the top of the first process space 22 for supplying gas to the substrate 20. If it is required to perform the thin film growth on both sides of the substrate 20, the first gas inlet means 221 may be provided at both the bottom and the top of the first process space 22, and if it is required to perform the thin film growth on only one side of the substrate 20, the first gas inlet means 221 may be provided at the bottom or the top of the first process space 22. Specifically, during the actual film growth process, the position of the first gas inlet device 221 may be fixed, and the substrate 20 may be controlled to move, or the substrate 20 may be fixed, and the first gas inlet device 221 may be controlled to move, so that the substrate 20 may uniformly contact the reaction gas.
The first air inlet means 221 comprises a plurality of first air extraction means 2213 and a plurality of first air inlets 2211 and a plurality of second air inlets 2212. The first and second gas inlets 2211 and 2212 are used for supplying different reactive gases to the substrate 20, and the first gas-extracting device 2213 is disposed between the first and second gas inlets 2211 and 2212 and used for extracting gas to isolate the first and second gas inlets 2211 and 2212. Specifically, in the first process space 22, the first gas inlet 221 includes a first gas inlet 2211 and a second gas inlet 2212, and the first gas inlet 221 supplies the reaction gas to the substrate 20 in a pulse manner. The first gas inlet 2211 inputs a reaction gas a to the substrate 20, the gas a may include a carrier gas and a chemical reaction source a, the second gas inlet 2212 inputs a reaction gas B to the substrate 20, the gas B may include a carrier gas and a chemical reaction source B, the substrate 20 firstly passes through the first gas inlet 2211, adsorbs the reaction gas a, and then passes through the second gas inlet 2212, adsorbs the reaction gas B, and the reaction gas a and the reaction gas B react on the surface of the substrate 20 to generate a new substance to be deposited on the surface of the substrate 20. A first pumping device 2213 is further disposed between the first inlet 2211 and the second inlet 2212, and the first pumping device 2213 pumps the reaction gas a supplied from the first inlet 2211 and the reaction gas B supplied from the second inlet 2212 to prevent the reaction gas a and the reaction gas B from reacting in the first process space 22. A first inlet 2211, a second inlet 2212 and a first pumping means 2213 form a structural unit, and a plurality of structural units may be disposed in the first process space 22 so that the substrate 20 is continuously contacted with the reaction gas a and the reaction gas B during the transportation. A first air extraction device 2213 is also arranged between the two structural units and used for separating the structural units.
Referring to fig. 3, fig. 3 is a schematic view of a portion of the second process space. In the second process space 23, there is also provided an air inlet means, which is defined herein as second air inlet means 231. A second gas inlet 231 may also be disposed at the bottom of the second process space 23, and/or at the top of the second process space 23, for delivering gas to the substrate 20. If it is required to perform the thin film growth on both sides of the substrate 20, the second gas supply device 231 may be provided at both the bottom and the top of the second process space 23, and if it is required to perform the thin film growth on only one side of the substrate 20, the second gas supply device 231 may be provided at the bottom or the top of the second process space 23.
The second gas inlet 231 includes a mixed gas inlet 2311 and a second gas exhaust 2312, the mixed gas inlet 2311 delivers two or more reactive gases, and a plurality of mixed gas inlets 2311 may be provided to allow the substrate 20 to contact the reactive gases multiple times. The second pumping device 2312 is disposed between the two mixing inlets 2311 for pumping excess reactant gas from the second process space 23.
Referring to fig. 2 and 3, a power supply device may be disposed in the process chamber 2 of the wafer processing apparatus 10. The Power supply device includes a Power supply, a matcher 25 and a connecting device, wherein the Power supply may be an RF (Radio frequency) Power supply or an RPS (Redundant Power System), and the Power supply may be disposed at any position outside the process chamber or at any position inside the process chamber, which is not limited herein; the matcher 25 is connected to a power supply and configured to directionally ignite the relevant chemical source, and the matcher 25 is disposed inside the process chamber, and specifically, the matcher 25 may be disposed at the bottom of the first process space 22 and the second process space 23 and/or at the top of the first process space 22 and the second process space 23 and configured to directionally ignite the reactant gas to form the plasma. In an embodiment, a power supply device is disposed in the process chamber 2 of the wafer processing apparatus 10, a power supply in the power supply device is disposed outside the process chamber, a matching device 25 is disposed at the top of the first process space 22 and the second process space 23, the matching device 25 is disposed at the top of the first gas inlet 221 in the first process space 22 and the second gas inlet 231 in the second process space 23, respectively, the gas ejected from the first gas inlet 221 in the first process space 22 and the second gas inlet 231 in the second process space 23 can contact the matching device 25, and the matching device 25 is used for directionally igniting the reaction gas to form the plasma.
It is understood that the first process space and the second process space described in the present application may share one power supply device, or different power supply devices may be used. The specific setting mode can be set according to production needs, and is not limited herein.
Referring to fig. 1 and 4, fig. 4 is a simplified structural diagram of a wafer processing apparatus.
The process chamber 2 of the wafer processing apparatus 10 may further include a pre-treatment space 21, which may also be a single chamber or a separate space in the process chamber, and the pre-treatment space 21 may be disposed before the first process space 22 or the second process space 23, with reference to the growth direction, and the substrate 20 may be subjected to a temperature pre-treatment and/or a surface bonding energy pre-treatment through the pre-treatment space 21 before the thin film growth. Specifically, in one embodiment, a heating assembly 26 is disposed in the pre-processing space 21, the temperature of the heating assembly 26 is set according to actual needs, and the temperature of the substrate 20 is controlled by adjusting the temperature of the heating assembly 26; and/or, an ozone generator is connected outside the pretreatment space 21 of the wafer treatment equipment 10, ozone is introduced into the pretreatment space 21, the surface bonding energy of the substrate surface after adsorbing the ozone is improved, and the surface bonding energy of the substrate is improved, so that the adhesion force of the film can be improved.
The process chamber 2 of the wafer processing apparatus 10 may further include a heating element 26, wherein the heating element 26 may be disposed at the bottom or top of the first process volume 22, and is located below the gas inlet device 24 when the heating element is disposed at the bottom of the first process volume 22; when the heating element is positioned at the top of the first process space 22, it is positioned above the gas inlet means 24. Similarly, the heating elements 26 may be disposed at the bottom of the pre-treatment space 21 and the bottom of the second process space 23, and/or at the top of the pre-treatment space 21 and the top of the second process space 23. The temperature of the heating assembly 26 is adjusted as required by the process conditions during the film growth process. In the actual production process, the heating assembly 26 may not be provided if the film growth process can be performed at normal temperature.
The wafer processing apparatus 10 further includes a loading system 1 and an unloading system 3, wherein the loading system 1 and the unloading system 3 are reel transport systems, both ends of the substrate 20 are rolled up and the substrate 20 is erected, the substrate 20 passes through a space between at least two gas inlet devices in the process chamber 2, and the two gas inlet devices perform film growth on both sides of the substrate 20. The loading system 1 and the unloading system 3 are arranged according to the substrate 20, and in particular, in one embodiment, the substrate 20 is a flexible substrate. At this time, the loading system 1 and the unloading system 3 may be two rollers, a transition space is further provided in the loading system 1 for adjusting a position and a tension of the flexible substrate to prevent the flexible substrate from shifting in a moving process, the flexible substrate is wound around the two rollers, and the flexible substrate is driven to move by rotation of the two rollers. In another embodiment, the substrate 20 is a glass substrate, the loading system 1 and the unloading system 3 are rollers, and rubber rings can be arranged on the rollers, and the rollers drive the glass substrate to move by the friction force between the rubber rings and the glass substrate in the rotation process; the loading system 1 and the unloading system 3 are also respectively provided with a loading space and a blanking space, and the glass substrate passes through the loading space of the loading system 1 and then is conveyed to the blanking space of the unloading system 3 through the rollers. In another embodiment, at least two rollers may be provided in each of the loading system 1 and the unloading system 3, by which the position of the substrate in the wafer processing apparatus is controlled.
In the above embodiment, the process chamber 2 of the wafer processing apparatus 10 includes the pre-processing space 21, the first process space 22 and the second process space 23, the length of the process chamber 2 is set according to the requirement of actual production, and the width of the process chamber 2 may be 1 to 2.5m, preferably 1.2 to 2 m.
The first and second process spaces 22 and 23 may also be provided with a cleaning device (not shown), which may be integrated with the air inlet device 24 or may be a separate device. The cleaning device may be provided at the bottom of the first and second process spaces 22 and 23 and/or at the top of the first and second process spaces 22 and 23 for cleaning the first and second process spaces 22 and 23. In one embodiment, the cleaning device is integrated with the air inlet device, and the air inlet of the air inlet device 24 may be the same as the air inlet of the cleaning device, so that the cleaning in situ can be performed by replacing the reaction gas at the air inlet with the cleaning gas. In another embodiment, the purge device is integral with the air intake device, but the air intake of the purge device 24 is different from the air intake of the air intake device. In other embodiments, the cleaning device may also be a separate device.
The process of flushing the process space by the inert gas sprayed by the cleaning device can be carried out after the growth of the thin film is finished, and can also be carried out in the growth gap of the thin film. Specifically, if the substrate 20 is a flexible substrate, the cleaning device may spray inert gas after the film growth is completely completed; if the substrate 20 is a flexible substrate, the cleaning apparatus may eject the inert gas in a gap between the two substrates 20 entering and exiting the process chamber, and the time for ejecting the inert gas is set according to the requirement, and is not limited herein.
The cleaning device is arranged in the process chamber, so that the condition that the coating in the chamber is cleaned by disassembling and knocking the chamber in a large area can be avoided, the chamber can be cleaned in time, and the preparation efficiency is improved.
With reference to fig. 1, the wafer processing apparatus 10 may further include a gas curtain assembly 4, the gas curtain assembly 4 is used for forming flowing gas to separate two spaces, and the sequence of the first process space 22 and the second process space 23 is that the first process space 22 is in front, the second process space 23 is in back, and the gas curtain assembly 4 is disposed between the pretreatment space 21 and the first process space 22; and/or between the first process space 11 and the second process space 23; and/or between the second process space 23 and the unloading system 3; or, with reference to the sequential direction of the process treatment, the sequence of the first process space 22 and the second process space 23 is that the second process space 23 is in front, the first process space 22 is behind, and the gas curtain assembly 4 is arranged between the pretreatment space 21 and the second process space 23; and/or between the second process space 23 and the first process space 22; and/or between the first process space 22 and the unloading system 3.
Specifically, if the pre-treatment space 21 is connected to the first process space 22, the air curtain assembly 4 may be disposed between the pre-treatment space 21 and the first process space 22; if the pre-treatment space 21 is connected to the second process space 23, an air curtain assembly 4 may be provided between the pre-treatment space 21 and the second process space 23. The process space is similar to the unloading system 3 and will not be described in detail. Use gas curtain subassembly 4 separation each space, prevent that the different gas in different spaces from mixing, influencing film growth effect. The gas used by the gas curtain component 4 can be inert gas or other gas which does not participate in the reaction.
Further, the wafer processing apparatus 10 may further include an isolation gate valve 5, the isolation gate valve 5 being disposed between the loading system 1 and the pre-processing space 21, and/or between the first process space 2 and the unloading system 3; and/or between the second process space 23 and the unloading system 3 for isolating the loading system 1, the process chamber 2 and the unloading system 3.
The state of the isolation gate valve 5 is different according to the substrate 20 to be subjected to thin film growth, and the isolation gate valve 5 can be always in an open state, or the isolation gate valve 5 can be closed after the substrate 20 enters the process chamber. For example, in one embodiment, substrate 20 is a flexible substrate that is always open with isolation gate valve 5 during transport; in another embodiment, the substrate 20 is a non-flexible substrate (e.g., a glass substrate), and the isolation valve 5 is closed after the non-flexible substrate enters the process chamber, and the isolation valve 5 is opened after the film growth is finished.
In addition, the wafer processing apparatus 10 provided by the present invention is in a vacuum state in the whole film growth process, and the vacuum pumps are respectively connected to the outsides of the loading system 1, the process chamber 2, and the unloading system 3 of the wafer processing apparatus 10, specifically, the vacuum pumps may be respectively disposed outside each process space included in the loading system 1, the unloading system 2, and the process chamber 2, and the vacuum pumps are used to pump the gas in each process system and process space of the wafer processing apparatus 10, so that the wafer processing apparatus 10 is in a vacuum state.
Referring to fig. 1 to 3, when the wafer processing apparatus 10 of the present invention is used to perform a film growth, the substrate 20 sequentially passes through the loading system 1, the pre-processing space 21 in the process chamber 2, the first process space 22 and the second process space 23 in the process chamber, and finally reaches the unloading system 3 to complete the film growth.
Specifically, in one embodiment, the substrate 20 is a flexible substrate, the reactive gas source a of the first process space 21 is a mixture of diisopropylamine silane and argon, and the reactive gas source B is oxygen; the reactant gas source for the second process space 22 is a mixture of silane and ammonia. The flexible substrate enters a loading system 1, and is in a drivable state through membrane penetration and connection; and starting vacuum pumps connected with the loading system 1, the process chamber 2 and the unloading system 3 of the wafer processing equipment 10, and starting the heating components 26 of the pretreatment space 21, the first process space 22 and the second process space 23 in the process chamber 2 to ensure that the wafer processing equipment 10 reaches the pressure and the temperature required by the film growth process, wherein the pressure required in the process reaches 40Pa and the temperature reaches 60 ℃. The isolation gate valve 5 in the wafer processing apparatus 10 is opened, the loading system 1 is started, and the flexible substrate is controlled to move to the pre-processing space 21 first, and after the pre-processing space 21 reaches 60 ℃, the flexible substrate moves to the first process space 22 through the air curtain assembly 4 between the pre-processing space 21 and the first process space 22. With reference to the direction of the film growth of the flexible substrate, the reaction gas source a is in front of the first gas inlet 221 of the first process space 22, the reaction gas source B is behind the reaction gas source a, and the flexible substrate contacts the reaction gas source a first and then contacts the reaction gas source B. The first process space 22 is provided therein with a plurality of first gas inlet means 221, and the flexible substrate is contacted with the reactive gas source for a plurality of times to form a film having a certain thickness on the surface thereof. The flexible substrate continues to move through the air curtain assembly 4 between the first process space 22 and the second process space 23 and enters the second process space 23, the second process space 23 is provided with a plurality of second air inlets 231, and the flexible substrate continuously adsorbs the reaction gas source sprayed by the second air inlets 231 during the moving process. Finally, the flexible substrate passes through the air curtain assembly 4 and the isolation gate valve 5 between the second process space 23 and the unloading system 3, enters the unloading system 3, and is cooled to finish the film growth. After the wafer processing equipment 10 is used for completing the film growth, the grown film layer is detected to be more uniform.
Referring to fig. 5, fig. 5 is a simplified block diagram of another embodiment of a wafer processing apparatus according to the present application. For power supplies and plasma generation devices, plasma sources in plasma atomic layer deposition processes and plasma sources in plasma enhanced chemical vapor deposition processes, because the frequencies are completely different, when the same plasma source is adopted, the existing plasma source needs to be greatly changed, the change often cannot show the economy, in order to save the cost of the equipment, referring to fig. 5, when the first process space 22 adopts the plasma enhanced atomic layer deposition process, the second process space 23 adopts the plasma enhanced chemical vapor deposition process, and the first process space 22 and the second process space 23 are alternately arranged in more than two sets in the process treatment sequential direction, each first process volume 22 employs the same plasma source RF1 and each second process volume 23 employs the same plasma source RF 2.
The above description is only for the purpose of illustrating embodiments of the present application and is not intended to limit the scope of the present application, and all modifications of equivalent structures and equivalent processes, which are made by the contents of the specification and the drawings of the present application or are directly or indirectly applied to other related technical fields, are also included in the scope of the present application.
Claims (16)
1. A wafer processing device comprises a loading system, a process chamber and an unloading system which are connected in sequence, and is characterized in that at least one first process space and at least one second process space are arranged in the process chamber;
the first process space and the second process space respectively correspond to different processes, the sequence of the first process space and the second process space is that the first process space is in front and the second process space is in back by taking the process treatment sequence as reference; or the second process space is before and the first process space is after;
the first process space and the second process space are respectively used for processing a substrate.
2. The wafer processing apparatus of claim 1, wherein the processing the substrate comprises: and carrying out film growth, heat treatment, doping treatment, plasma treatment and cooling treatment on the surface of the substrate.
3. The wafer processing apparatus of claim 1, further comprising:
a cleaning device disposed in the first process space or the second process space.
4. The wafer processing apparatus of claim 1, wherein a plasma is present in the space during the processing.
5. The wafer processing apparatus of claim 4, wherein the first process space employs a plasma enhanced atomic layer deposition process and the second process space employs a plasma enhanced chemical vapor deposition process.
6. The wafer processing apparatus of claim 5, wherein more than two sets of the first process spaces and the second process spaces are alternately arranged in a sequential direction of the process.
7. The wafer processing apparatus of claim 5, wherein the same plasma source is used for each of the first process spaces and the same plasma source is used for each of the second process spaces.
8. The wafer processing apparatus of claim 1, further comprising:
a gas inlet device for delivering gas to the substrate.
9. The wafer processing apparatus of claim 8, wherein the gas inlet device further comprises:
the air exhausting device comprises a plurality of air exhausting devices and a plurality of groups of first air inlets and second air inlets;
wherein the first gas inlet and the second gas inlet are used to deliver different gases to the substrate;
the air extracting device is arranged between the first air inlet and the second air inlet and used for extracting air to isolate the first air inlet from the second air inlet.
10. The apparatus of claim 8, wherein the loading system and the unloading system are reel transport systems that reel up both ends of the substrate and cradle the substrate, which passes through a space between at least two of the gas inlets in the process chamber, which process both sides of the substrate.
11. The wafer processing apparatus of claim 10, wherein the spool transport system comprises at least two rollers;
the rollers are used to control the position of the substrate in the wafer processing apparatus.
12. The wafer processing apparatus as claimed in claim 1, wherein the wafer processing apparatus is further provided with a pre-processing space;
the pre-treatment space is disposed between the loading system and the first process space, and/or between the loading system and the second process space, and is used for performing temperature pre-treatment and/or surface binding energy pre-treatment on the substrate.
13. The wafer processing apparatus of claim 12, further comprising:
a power supply arrangement to ignite a reactant gas to form a plasma within the first process space and/or the second process space.
14. The wafer processing apparatus of claim 12, further comprising:
an isolation gate valve disposed between the loading system and the pre-processing space, and/or between the first process space and the unloading system; and/or between the second process space and the unloading system.
15. The wafer processing apparatus of claim 12, further comprising:
an air curtain assembly for forming a flowing gas to separate two spaces;
by taking the process treatment sequence direction as reference, the sequence of the first process space and the second process space is that the first process space is in front and the second process space is in back, and the air curtain component is arranged between the pretreatment space and the first process space; and/or, disposed between the first process space and the second process space; and/or between the second process space and the unloading system; or
By taking the sequential direction of the process treatment as reference, the sequence of the first process space and the second process space is that the second process space is in front, the first process space is in back, and the air curtain component is arranged between the pretreatment space and the second process space; and/or, disposed between the second process space and the first process space; and/or between the first process space and the unloading system.
16. The wafer processing apparatus of claim 12, further comprising:
a heating assembly for controlling a temperature of the substrate.
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| CN202210328870.6A CN114709151A (en) | 2022-03-30 | 2022-03-30 | Wafer processing equipment |
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| JPH10256371A (en) * | 1997-03-14 | 1998-09-25 | Sony Corp | Method and device for manufacturing semiconductor |
| KR20150077112A (en) * | 2013-12-27 | 2015-07-07 | 엘아이지인베니아 주식회사 | Apparatus for processing flexible substrate and method of processing flexible substrate using the same |
| CN113122827A (en) * | 2021-03-19 | 2021-07-16 | 苏州晟成光伏设备有限公司 | Equipment and process for preparing back-passivated solar cell |
| CN214176054U (en) * | 2020-12-25 | 2021-09-10 | 湖南红太阳光电科技有限公司 | Integrated equipment for preparing silicon oxide and doped polycrystalline silicon |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10256371A (en) * | 1997-03-14 | 1998-09-25 | Sony Corp | Method and device for manufacturing semiconductor |
| KR20150077112A (en) * | 2013-12-27 | 2015-07-07 | 엘아이지인베니아 주식회사 | Apparatus for processing flexible substrate and method of processing flexible substrate using the same |
| CN214176054U (en) * | 2020-12-25 | 2021-09-10 | 湖南红太阳光电科技有限公司 | Integrated equipment for preparing silicon oxide and doped polycrystalline silicon |
| CN113122827A (en) * | 2021-03-19 | 2021-07-16 | 苏州晟成光伏设备有限公司 | Equipment and process for preparing back-passivated solar cell |
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