CN114695790B - OLED display panel and OLED display device - Google Patents
OLED display panel and OLED display device Download PDFInfo
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- CN114695790B CN114695790B CN202210272336.8A CN202210272336A CN114695790B CN 114695790 B CN114695790 B CN 114695790B CN 202210272336 A CN202210272336 A CN 202210272336A CN 114695790 B CN114695790 B CN 114695790B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/824—Cathodes combined with auxiliary electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/179—Interconnections, e.g. wiring lines or terminals
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
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Abstract
The application provides an OLED display panel and an OLED display device; according to the OLED display panel, the through holes are formed in the light transmission area of the substrate, the light transmittance of the light transmission area is improved, the cathode inhibition layer is arranged, the light transmittance of the cathode inhibition layer is larger than that of the public electrode layer, the thickness of the public electrode layer in the light transmission area is reduced, the public electrode layer can block less light and even cannot block light, and the light transmittance of the light transmission area is further improved.
Description
Technical Field
The application relates to the technical field of display, in particular to an OLED display panel and an OLED display device.
Background
OLED (Organic Light Emitting Diode ) display technology is widely used due to advantages of high contrast, low power consumption, flexibility, and the like. In order to improve the screen ratio, the existing display device can set optical elements such as a front camera and face recognition under the display screen, but due to the fact that the whole cathode is set, the light transmittance of the cathode is low, most of light can be blocked by the cathode, blue light can be blocked by the substrate, the light cannot penetrate through the display screen to reach the optical elements, and then the optical elements cannot work normally.
Therefore, the conventional OLED display device has the technical problem that the optical element cannot work normally due to low cathode light transmittance.
Disclosure of Invention
The embodiment of the application provides an OLED display panel and an OLED display device, which are used for solving the technical problem that an optical element cannot work normally due to low cathode light transmittance of the traditional OLED display device.
An embodiment of the present application provides an OLED display panel, including:
a substrate;
the driving circuit layer is arranged on one side of the substrate;
the pixel electrode layer is arranged on one side of the driving circuit layer away from the substrate;
the light-emitting functional layer is arranged on one side of the pixel electrode layer, which is far away from the driving circuit layer;
the public electrode layer is arranged on one side of the light-emitting functional layer, which is far away from the pixel electrode layer;
the OLED display panel comprises a first display area and a second display area, wherein the second display area comprises a light transmission area and a light emitting area which correspond to the arrangement positions of electronic elements, the substrate is provided with a via hole in the light transmission area, the OLED display panel further comprises a cathode inhibition layer arranged in the light transmission area, the cathode inhibition layer is arranged on one side, far away from the pixel electrode layer, of the light emitting functional layer, the light transmittance of the cathode inhibition layer is larger than that of the public electrode layer, and the thickness of the public electrode layer in the light emitting area is larger than that of the public electrode layer in the light transmission area.
In some embodiments, the light emitting functional layer includes a hole layer, an electron layer, and a light emitting layer disposed between the hole layer and the electron layer, the electron layer having an adhesion to the common electrode layer greater than an adhesion of the common electrode layer to the cathode suppressing layer.
In some embodiments, the light emitting functional layer includes a pixel defining layer defining a pixel region, and the cathode suppressing layer is spaced apart from the pixel region.
In some embodiments, the cathode suppression layer is disposed corresponding to a via of the substrate, and a width of a projection of the cathode suppression layer onto the substrate is less than a width of the via of the substrate.
In some embodiments, the cross-sectional shape of the via includes a trapezoid, and a width of a side of the via proximate to the drive circuit layer is greater than a width of a side of the via distal from the drive circuit layer.
In some embodiments, the substrate includes a first flexible layer, a second flexible layer, and a barrier layer disposed between the first flexible layer and the second flexible layer, the first flexible layer disposed on a side of the barrier layer remote from the second flexible layer, the first flexible layer formed with a via.
In some embodiments, a filler material is disposed within the via, the filler material having a light transmittance that is greater than a light transmittance of the substrate.
In some embodiments, the common electrode layer is formed with a via hole, and the cathode suppressing layer is disposed corresponding to the via hole.
In some embodiments, the thickness of the cathode suppression layer is less than or equal to the thickness of the common electrode layer.
Meanwhile, an embodiment of the present application provides an OLED display device, including:
the OLED display panel comprises a substrate, a driving circuit layer, a pixel electrode layer, a light-emitting functional layer and a public electrode layer, wherein the driving circuit layer is arranged on one side of the substrate, the pixel electrode layer is arranged on one side of the driving circuit layer, which is far away from the substrate, the light-emitting functional layer is arranged on one side of the pixel electrode layer, which is far away from the driving circuit layer, the public electrode layer is arranged on one side of the light-emitting functional layer, which is far away from the pixel electrode layer, the OLED display panel comprises a first display area and a second display area, the second display area comprises a light-transmitting area and a light-emitting area, which correspond to the arrangement position of electronic elements, a via hole is formed in the light-transmitting area of the substrate, the OLED display panel further comprises a cathode inhibition layer arranged on the light-transmitting area, the cathode inhibition layer is arranged on one side of the light-emitting functional layer, which is far away from the pixel electrode layer, the light-transmitting rate of the cathode inhibition layer is larger than the light-transmitting rate of the public electrode layer, and the thickness of the public electrode layer positioned in the light-emitting area is larger than the thickness of the public electrode layer positioned in the light-transmitting area.
The electronic element is arranged on one side of the OLED display panel and is arranged in the light transmission area.
The beneficial effects are that: the application provides an OLED display panel and an OLED display device; the OLED display panel comprises a substrate, a driving circuit layer, a pixel electrode layer, a light-emitting functional layer and a public electrode layer, wherein the driving circuit layer is arranged on one side of the substrate, the pixel electrode layer is arranged on one side, far away from the substrate, of the driving circuit layer, the light-emitting functional layer is arranged on one side, far away from the driving circuit layer, of the pixel electrode layer, the public electrode layer is arranged on one side, far away from the pixel electrode layer, of the light-emitting functional layer, the OLED display panel comprises a first display area and a second display area, the second display area comprises a light-transmitting area and a light-emitting area, which correspond to the arrangement positions of electronic elements, the substrate is provided with a through hole in the light-transmitting area, the OLED display panel further comprises a cathode inhibition layer arranged on one side, far away from the pixel electrode layer, of the cathode inhibition layer, the light transmittance of the public electrode layer is larger than that of the public electrode layer, and the thickness of the public electrode layer in the light-emitting area is larger than that of the public electrode layer in the light-transmitting area. According to the application, the through holes are formed in the light transmission area of the substrate, so that the light transmittance of the light transmission area is improved, and the cathode inhibition layer is arranged, so that the light transmittance of the cathode inhibition layer is larger than that of the public electrode layer, the thickness of the public electrode layer in the light transmission area is reduced, the public electrode layer can block less or even no light, and the light transmittance of the light transmission area is further improved.
Drawings
The technical solution and other advantageous effects of the present application will be made apparent by the following detailed description of the specific embodiments of the present application with reference to the accompanying drawings.
Fig. 1 is a first schematic diagram of an OLED display panel according to an embodiment of the present application.
Fig. 2 is a second schematic diagram of an OLED display panel according to an embodiment of the present application.
Fig. 3 is a third schematic diagram of an OLED display panel according to an embodiment of the present application.
Fig. 4 is a schematic diagram of an OLED display device according to an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. It will be apparent that the described embodiments are only some, but not all, embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to fall within the scope of the application.
In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more of the described features. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically connected, electrically connected or can be communicated with each other; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present application, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.
The following disclosure provides many different embodiments, or examples, for implementing different features of the application. In order to simplify the present disclosure, components and arrangements of specific examples are described below. They are, of course, merely examples and are not intended to limit the application. Furthermore, the present application may repeat reference numerals and/or letters in the various examples, which are for the purpose of brevity and clarity, and which do not themselves indicate the relationship between the various embodiments and/or arrangements discussed. In addition, the present application provides examples of various specific processes and materials, but one of ordinary skill in the art will recognize the application of other processes and/or the use of other materials.
Aiming at the technical problem that an optical element cannot work normally due to low cathode light transmittance of an existing OLED display device, the embodiment of the application provides an OLED display panel and an OLED display device, which are used for relieving the technical problem.
As shown in fig. 1 and 2, an embodiment of the present application provides an OLED display panel, where the OLED display panel 1 includes:
a substrate 11;
a driving circuit layer 12 provided on the substrate 11 side;
a pixel electrode layer 13 provided on a side of the driving circuit layer 12 away from the substrate 11;
a light emitting functional layer 14 provided on a side of the pixel electrode layer 13 away from the driving circuit layer 12;
a common electrode layer 15 provided on a side of the light emitting functional layer 14 away from the pixel electrode layer 13;
the OLED display panel 1 includes a first display area 161 and a second display area 162, the second display area 162 includes a light-transmitting area 162a and a light-emitting area 162b corresponding to the arrangement position of the electronic element, the substrate 11 is formed with a via 114 in the light-transmitting area 162a, the OLED display panel 1 further includes a cathode suppressing layer 17 disposed in the light-transmitting area 162a, the cathode suppressing layer 17 is disposed on a side of the light-emitting functional layer 14 away from the pixel electrode layer 13, the light transmittance of the cathode suppressing layer 17 is greater than the light transmittance of the common electrode layer 15, and the thickness L1 of the common electrode layer 15 in the light-emitting area 162b is greater than the thickness L2 of the common electrode layer 15 in the light-transmitting area 162a.
The embodiment of the application provides an OLED display panel, which improves the transmittance of light in a light transmission area by forming a through hole in a substrate in the light transmission area, and further improves the light transmittance of the light transmission area by arranging a cathode inhibition layer, so that the transmittance of the cathode inhibition layer is larger than that of a public electrode layer, the thickness of the public electrode layer in the light transmission area is reduced, the public electrode layer can block less or even no light, and the light transmittance of the light transmission area is further improved.
A large blocking of light by the cathode causes a problem of a small incident light amount of the electronic component. In one embodiment, as shown in fig. 1 and 2, the light emitting functional layer 14 includes a hole layer 141, an electron layer 143, and a light emitting layer 142 disposed between the hole layer 141 and the electron layer 143, and the adhesion force of the electron layer 143 to the common electrode layer 15 is greater than the adhesion force of the common electrode layer 15 to the cathode suppressing layer 17. By making the adhesion between the electron layer and the common electrode layer greater than the adhesion between the common electrode layer and the cathode inhibition layer, the common electrode layer can be normally arranged on the electron layer when the common electrode layer is formed, and the common electrode layer is difficult or impossible to form on the cathode inhibition layer, so that the thickness of the common electrode layer is reduced, the transmittance of light in the area corresponding to the cathode inhibition layer is improved, and the common electrode layer is prevented from blocking light.
Specifically, the designs of the hole layer and the electron layer are different for different OLED display panels, for example, the hole layer includes a hole injection layer and a hole transport layer, the hole transport layer is disposed between the hole injection layer and the light emitting layer, the electron layer includes an electron injection layer and an electron transport layer, and the electron transport layer is disposed between the electron injection layer and the light emitting layer; the hole layer may also include only a hole transport layer, and the electron layer may include an electron transport layer, and for other designs of the hole layer and the electron layer, designs of the cathode suppressing layer and the substrate in the present application may also be adopted, and embodiments of the present application are not limited thereto.
The cathode suppression layer is arranged on the light-emitting functional layer, so that the problem of poor light-emitting effect is solved. In one embodiment, as shown in fig. 1 and 2, the light-emitting functional layer 14 includes a pixel defining layer 144, where the pixel defining layer 144 defines a pixel region, and the cathode suppressing layer 17 is spaced from the pixel region. The cathode inhibition layer is arranged in the light transmission area, so that the thickness of the public electrode layer in the light transmission area can be reduced, and meanwhile, in order to avoid thinning the public electrode on the light-emitting functional layer, signal attenuation or instability is caused, normal light emission of the light-emitting layer is influenced, and a certain distance exists between the cathode inhibition layer and the pixel area, so that normal display of the display panel is prevented from being influenced.
Specifically, as shown in fig. 2, taking a red pixel as an example, the red pixel includes a red light emitting layer 142a, and a region corresponding to the red pixel of the cathode suppressing layer 17 has a space, so that the red pixel can emit light normally by making the region corresponding to the red pixel of the cathode suppressing layer have a space, and the electrical property of the circuit corresponding to the red pixel is prevented from being influenced by the cathode suppressing layer.
Aiming at the problem that light rays possibly lose after passing through the cathode inhibition layer. In one embodiment, as shown in fig. 3, the cathode suppressing layer 17 is disposed corresponding to the via 114 of the substrate 11, and the width L3 of the projection of the cathode suppressing layer 17 on the substrate 11 is smaller than the width L4 of the via 114 of the substrate 11. The width of the cathode inhibition layer is smaller than that of the through hole on the substrate, so that light entering the OLED display panel through the cathode inhibition layer can be diffused out through the through hole, the light cannot pass through the common electrode layer and the substrate, the light is prevented from being lost greatly, and the transmittance of the light is improved.
In one embodiment, the cross-sectional shape of the cathode suppression layer includes, but is not limited to, regular polygons and irregular polygons such as circles, rectangles, squares, trapezoids, and the like.
Specifically, when the cathode-suppressing layer is formed in a trapezoidal shape, the width of the upper surface of the cathode-suppressing layer may be used as the width of the cathode-suppressing layer, the width of the lower surface of the cathode-suppressing layer may be used as the width of the cathode-suppressing layer, and the average value of the width of the upper surface of the cathode-suppressing layer and the width of the lower surface of the cathode-suppressing layer may be used as the width of the cathode-suppressing layer. Specifically, since light enters from the upper surface of the cathode suppressing layer, at this time, the light does not pass through the common electrode layer or passes through the common electrode layer having a low thickness, and the light loss is small, the width of the upper surface of the cathode suppressing layer may be set as the width of the cathode suppressing layer, but the width of the lower surface of the cathode suppressing layer may be set as the width of the cathode suppressing layer in consideration of the fact that light also enters from the side surface of the cathode suppressing layer.
Specifically, since the light loss is small when the light passes through the via hole without passing through the substrate, the width of the via hole on the side away from the driving circuit layer may be used as the width of the via hole, and similarly, the width of the via hole on the side close to the driving circuit layer may be used as the width of the via hole, and the average value of the width of the side close to the driving circuit layer and the width of the side away from the driving circuit layer may be used as the width of the via hole.
Specifically, L3 may be smaller than L4, L4 may be smaller than l3+10μm, by making the width of the projection of the cathode suppression layer on the substrate smaller than the width of the via hole of the substrate, and making the width of the via hole of the substrate smaller than the width of the cathode suppression layer plus 10 μm, the width of the via hole of the substrate is made larger, so that the light transmitted through the cathode suppression layer can pass through the via hole, and meanwhile, the too large width of the via hole is avoided, and the integrity of the substrate is affected.
In one embodiment, the cross-sectional shape of the via includes rectangular, square, trapezoidal.
In one embodiment, as shown in fig. 3, the cross-sectional shape of the via 114 includes a trapezoid, and a width of a side of the via 114 near the driving circuit layer is greater than a width of a side of the via 114 far from the driving circuit layer. The width of one side close to the driving circuit layer is larger, so that light passing through the cathode inhibition layer and light passing through the common electrode layer can reach the via hole, and then the via hole is in a trapezoid shape, so that the light can be reflected to the electronic element when the light irradiates the substrate, the light transmittance is improved, and the light loss is reduced.
Specifically, as shown in fig. 3, in the region where the via 114 is formed, the angle a formed by the substrate 11 on the side away from the driving circuit layer is greater than or equal to 45 degrees and less than or equal to 90 degrees. Through making the angle of substrate be 45 degrees angles to 90 degrees angles for light can take place total reflection when shining on the substrate, thereby assemble the light of big visual angle, when improving the transmissivity of light, avoid the loss of light.
In one embodiment, as shown in fig. 1 and 2, the substrate 11 includes a first flexible layer 111, a second flexible layer 113, and a barrier layer 112 disposed between the first flexible layer 111 and the second flexible layer 113, the first flexible layer 111 is disposed on a side of the barrier layer 112 away from the second flexible layer 113, and the first flexible layer 111 is formed with a via 114. Through forming the via hole on first flexible layer, improve the transmissivity of light, but to barrier layer and second flexible layer, can remain complete structure, avoid destroying the integrality of barrier layer and second flexible layer for OLED display panel separation water oxygen's ability is better.
Specifically, the above embodiment describes in detail the case where the first flexible layer is formed with the via hole, but the embodiment of the present application is not limited thereto, for example, the second flexible layer may also be formed with the via hole, so as to further improve the transmittance of light.
In one embodiment, as shown in fig. 2, a filler material 18 is disposed in the via 114, and the light transmittance of the filler material 18 is greater than the light transmittance of the substrate 11. Through set up the filler in the via hole to make the luminousness of filler greater than the luminousness of substrate, make light pass through from the filler when passing the light transmission district, improve the luminousness of light, and through setting up the filler, make the filler improve OLED display panel's integrality, improve OLED display panel's separation water oxygen's ability.
In one embodiment, the filler material has a refractive index greater than the refractive index of the substrate. The refractive index of the filling material is larger than that of the substrate, so that after the light irradiates the filling material, the light cannot diverge from the substrate, but total reflection occurs at the junction of the filling material and the substrate, so that the light can be emitted from the filling material, and light loss is avoided.
In one embodiment, the common electrode layer is formed with a via hole, and the cathode suppressing layer is disposed corresponding to the via hole. Through the through hole formed on the common electrode layer, the common electrode layer is not arranged on the cathode inhibition layer, and light can directly pass through the cathode inhibition layer, so that the light transmittance is further improved.
Specifically, the thickness of the cathode suppression layer is less than or equal to the thickness of the common electrode layer. By making the thickness of the cathode suppressing layer smaller than or equal to the thickness of the common electrode layer, the cathode suppressing layer is prevented from affecting the formation of the subsequent film layer.
In one embodiment, the cathode suppressing layer is greater than 5% and less than or equal to 95% of the light transmitting region. The cathode inhibition layer is arranged to improve the light transmittance of the light transmission area, but the arrangement of the cathode inhibition layer in the light-emitting area is avoided to influence the display.
Specifically, as shown in fig. 2, taking an example that the OLED display panel includes the red light emitting layer 142a, the green light emitting layer 142b and the blue light emitting layer 142c, the light transmitting region 162a is located between the light emitting region corresponding to the red light emitting layer 142a and the light emitting region corresponding to the green light emitting layer 142b, and the light transmitting region 162a is located between the green light emitting layer 142b and the blue light emitting layer 142c, the cathode suppression layer 17 may be disposed in the light transmitting region 162a to improve the light transmittance of the light transmitting region 162a, and the second display region 162 further includes the non-light emitting region 162c, for the non-light emitting region 162c, the common electrode layer may be normally formed without disposing the cathode suppression layer.
Specifically, when the cathode suppression layer is set, the setting mode of the electronic element can be determined, for example, the electronic element is set only corresponding to the light transmission area between two sub-pixels, and the cathode suppression layer can be set only in the light transmission area between two sub-pixels, but when the electronic element is set corresponding to a plurality of pixels, the cathode suppression layer can be set in the light transmission area between each sub-pixel in the plurality of pixels, so that the light transmittance is improved, and the electronic element works normally.
Specifically, the driving circuit layer includes a buffer layer, an active layer, a first gate insulating layer, a first metal layer, a second gate insulating layer, a second metal layer, an interlayer insulating layer, a source/drain layer, and a planarization layer.
Meanwhile, the embodiment of the application provides a preparation method of the OLED display panel, which comprises the following steps:
providing a substrate, and carrying out patterning treatment on a first flexible layer in the substrate to obtain a via hole; the substrate comprises a first flexible layer, a barrier layer and a second flexible layer; the OLED display panel comprises a first display area and a second display area, the second display area comprises a light transmission area and a light emitting area which correspond to the arrangement positions of the electronic elements, and the via holes are arranged in the light transmission area;
forming a driving circuit layer on the substrate;
forming a pixel electrode layer on the driving circuit layer;
evaporating a hole layer on the pixel electrode layer by using a universal mask;
evaporating a light-emitting layer on the hole layer by using a fine metal mask;
evaporating an electronic layer on the light-emitting layer by using a universal mask;
evaporating a cathode inhibition layer on the electronic layer by using a fine metal mask plate, wherein the projection of the cathode inhibition layer on the substrate is overlapped with the projection of the through hole, and the projection of the cathode inhibition layer on the substrate is not overlapped with the projection of the pixel electrode layer;
evaporating the common electrode layer by using a universal mask; the light transmittance of the cathode inhibition layer is greater than that of the common electrode layer, and the thickness of the common electrode layer in the light emitting region is greater than that of the common electrode layer in the light transmitting region.
The application provides a preparation method of an OLED display panel, which is characterized in that a substrate is provided with a through hole in a light transmission area, so that the light transmittance of light in the light transmission area is improved, and a cathode inhibition layer is arranged, so that the light transmittance of the cathode inhibition layer is larger than that of a public electrode layer, the thickness of the public electrode layer in the light transmission area is reduced, the public electrode layer can block less or even no light, and the light transmittance of the light transmission area is further improved.
Meanwhile, as shown in fig. 1 and 4, an embodiment of the present application provides an OLED display device, including:
an OLED display panel including a substrate 11, a driving circuit layer 12, a pixel electrode layer 13, a light-emitting functional layer 14, and a common electrode layer 15, wherein the driving circuit layer 12 is disposed on one side of the substrate 11, the pixel electrode layer 13 is disposed on one side of the driving circuit layer 12 away from the substrate 11, the light-emitting functional layer 14 is disposed on one side of the pixel electrode layer 13 away from the driving circuit layer 12, the common electrode layer 15 is disposed on one side of the light-emitting functional layer 14 away from the pixel electrode layer 13, the OLED display panel includes a first display region 161 and a second display region 162, the second display region 162 includes a light-transmitting region 162a and a light-emitting region 162b corresponding to a position where an electronic element is disposed, the substrate 11 is formed with a via 114 in the light-transmitting region 162a, the OLED display panel further includes a cathode-suppressing layer 17 disposed on one side of the light-emitting functional layer 14 away from the pixel electrode layer 13, the light-transmitting rate of the cathode-suppressing layer 17 is greater than that of the common electrode layer 15, and the light-transmitting region 162 is located at a thickness of the common electrode layer 15L 2a greater than the light-transmitting region 15 b is located at a thickness of the common electrode layer 15L 1;
the electronic element 31 is disposed on one side of the OLED display panel, and the electronic element 31 is disposed in the light-transmitting region 162a.
The embodiment of the application provides an OLED display device, which comprises an OLED display panel and an electronic element, wherein a through hole is formed in a light transmission area of a substrate of the OLED display panel, so that the light transmittance of light in the light transmission area is improved, and a cathode inhibition layer is arranged, so that the light transmittance of the cathode inhibition layer is larger than that of a public electrode layer, the thickness of the public electrode layer in the light transmission area is reduced, the public electrode layer can block less or even no light, and the light transmittance of the light transmission area is further improved.
As can be seen from the above embodiments:
the embodiment of the application provides an OLED display panel and an OLED display device; the OLED display panel comprises a substrate, a driving circuit layer, a pixel electrode layer, a light-emitting functional layer and a public electrode layer, wherein the driving circuit layer is arranged on one side of the substrate, the pixel electrode layer is arranged on one side, far away from the substrate, of the driving circuit layer, the light-emitting functional layer is arranged on one side, far away from the driving circuit layer, of the pixel electrode layer, the public electrode layer is arranged on one side, far away from the pixel electrode layer, of the light-emitting functional layer, the OLED display panel comprises a first display area and a second display area, the second display area comprises a light-transmitting area and a light-emitting area, which correspond to the arrangement positions of electronic elements, the substrate is provided with a through hole in the light-transmitting area, the OLED display panel further comprises a cathode inhibition layer arranged on one side, far away from the pixel electrode layer, of the cathode inhibition layer, the light transmittance of the public electrode layer is larger than that of the public electrode layer, and the thickness of the public electrode layer in the light-emitting area is larger than that of the public electrode layer in the light-transmitting area. According to the application, the through holes are formed in the light transmission area of the substrate, so that the light transmittance of the light transmission area is improved, and the cathode inhibition layer is arranged, so that the light transmittance of the cathode inhibition layer is larger than that of the public electrode layer, the thickness of the public electrode layer in the light transmission area is reduced, the public electrode layer can block less or even no light, and the light transmittance of the light transmission area is further improved.
In the foregoing embodiments, the descriptions of the embodiments are emphasized, and for parts of one embodiment that are not described in detail, reference may be made to related descriptions of other embodiments.
The above description has been made in detail on an OLED display panel and an OLED display device provided by the embodiments of the present application, and specific examples are applied herein to illustrate the principles and embodiments of the present application, where the above description of the embodiments is only for helping to understand the technical solution and core ideas of the present application; those of ordinary skill in the art will appreciate that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the application.
Claims (7)
1. An OLED display panel, comprising:
a substrate;
the driving circuit layer is arranged on one side of the substrate;
the pixel electrode layer is arranged on one side of the driving circuit layer away from the substrate;
the light-emitting functional layer is arranged on one side of the pixel electrode layer, which is far away from the driving circuit layer;
the public electrode layer is arranged on one side of the light-emitting functional layer, which is far away from the pixel electrode layer;
the OLED display panel comprises a first display area and a second display area, wherein the second display area comprises a light transmission area and a light emitting area which correspond to the arrangement position of an electronic element, a through hole is formed in the light transmission area through the substrate, the OLED display panel further comprises a cathode inhibition layer arranged in the light transmission area, the cathode inhibition layer is arranged on one side, far away from the pixel electrode layer, of the light emitting functional layer, the light transmittance of the cathode inhibition layer is larger than that of the public electrode layer, and the thickness of the public electrode layer positioned in the light emitting area is larger than that of the public electrode layer positioned in the light transmission area; the cathode inhibition layer is arranged corresponding to the through hole of the substrate, the projection width of the cathode inhibition layer on the substrate is smaller than the width of the through hole of the substrate, the cross section shape of the through hole comprises a trapezoid, the width of one side of the through hole close to the driving circuit layer is larger than the width of one side of the through hole far away from the driving circuit layer, and in the area where the through hole is formed, the angle formed by the substrate on the side far away from the driving circuit layer is larger than or equal to 45 degrees and smaller than 90 degrees; and a filling material is arranged in the via hole, the light transmittance of the filling material is larger than that of the substrate, and the refractive index of the filling material is larger than that of the substrate.
2. The OLED display panel according to claim 1, wherein the light-emitting functional layer includes a hole layer, an electron layer, and a light-emitting layer disposed between the hole layer and the electron layer, and an adhesion force of the electron layer to the common electrode layer is greater than an adhesion force of the common electrode layer to the cathode suppression layer.
3. The OLED display panel of claim 1, wherein the light-emitting functional layer includes a pixel defining layer defining a pixel region, the cathode suppressing layer being spaced from the pixel region.
4. The OLED display panel of claim 1, wherein the substrate includes a first flexible layer, a second flexible layer, and a barrier layer disposed between the first flexible layer and the second flexible layer, the first flexible layer disposed on a side of the barrier layer remote from the second flexible layer, the first flexible layer formed with a via.
5. The OLED display panel according to claim 1, wherein the common electrode layer is formed with a through hole, and the cathode suppressing layer is disposed corresponding to the through hole.
6. The OLED display panel of claim 5, wherein the cathode suppression layer has a thickness less than or equal to a thickness of the common electrode layer.
7. An OLED display device, comprising:
the OLED display panel comprises a substrate, a driving circuit layer, a pixel electrode layer, a light-emitting functional layer and a public electrode layer, wherein the driving circuit layer is arranged on one side of the substrate, the pixel electrode layer is arranged on one side of the driving circuit layer, which is far away from the substrate, the light-emitting functional layer is arranged on one side of the pixel electrode layer, which is far away from the driving circuit layer, the public electrode layer is arranged on one side of the light-emitting functional layer, which is far away from the pixel electrode layer, the OLED display panel comprises a first display area and a second display area, the second display area comprises a light-transmitting area and a light-emitting area, which correspond to the arrangement position of electronic elements, a via hole is formed in the light-transmitting area of the substrate, the OLED display panel further comprises a cathode inhibition layer arranged on the light-transmitting area, the cathode inhibition layer is arranged on one side of the light-emitting functional layer, which is far away from the pixel electrode layer, the light-transmitting rate of the cathode inhibition layer is larger than the light-transmitting rate of the public electrode layer, and the thickness of the public electrode layer positioned in the light-emitting area is larger than the thickness of the public electrode layer positioned in the light-transmitting area. The cathode inhibition layer is arranged corresponding to the through hole of the substrate, the projection width of the cathode inhibition layer on the substrate is smaller than the width of the through hole of the substrate, the cross section shape of the through hole comprises a trapezoid, the width of one side of the through hole close to the driving circuit layer is larger than the width of one side of the through hole far away from the driving circuit layer, and in the area where the through hole is formed, the angle formed by the substrate on the side far away from the driving circuit layer is larger than or equal to 45 degrees and smaller than 90 degrees; a filling material is arranged in the via hole, the light transmittance of the filling material is larger than that of the substrate, and the refractive index of the filling material is larger than that of the substrate;
the electronic element is arranged on one side of the OLED display panel and is arranged in the light transmission area.
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107946341A (en) * | 2017-11-10 | 2018-04-20 | 上海天马微电子有限公司 | The manufacture method of display device and display device |
| WO2018205511A1 (en) * | 2017-05-12 | 2018-11-15 | Boe Technology Group Co., Ltd. | Display substrate, display apparatus, and method of fabricating display substrate |
| CN110503896A (en) * | 2019-08-09 | 2019-11-26 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
| CN111211156A (en) * | 2020-03-23 | 2020-05-29 | 武汉华星光电半导体显示技术有限公司 | OLED display panel, preparation method thereof and OLED display device |
| CN111916485A (en) * | 2020-08-06 | 2020-11-10 | 昆山国显光电有限公司 | Display panel and display device |
| CN112054048A (en) * | 2020-09-17 | 2020-12-08 | 合肥维信诺科技有限公司 | Light-transmitting display module, display panel and preparation method thereof |
| CN212257459U (en) * | 2020-08-10 | 2020-12-29 | 京东方科技集团股份有限公司 | Display panel and display device |
| CN113054133A (en) * | 2021-03-09 | 2021-06-29 | 武汉华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| WO2021184914A1 (en) * | 2020-03-16 | 2021-09-23 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method therefor, display panel, and display device |
| CN113629208A (en) * | 2021-07-20 | 2021-11-09 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
-
2022
- 2022-03-18 CN CN202210272336.8A patent/CN114695790B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018205511A1 (en) * | 2017-05-12 | 2018-11-15 | Boe Technology Group Co., Ltd. | Display substrate, display apparatus, and method of fabricating display substrate |
| CN107946341A (en) * | 2017-11-10 | 2018-04-20 | 上海天马微电子有限公司 | The manufacture method of display device and display device |
| CN110503896A (en) * | 2019-08-09 | 2019-11-26 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
| WO2021184914A1 (en) * | 2020-03-16 | 2021-09-23 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method therefor, display panel, and display device |
| CN111211156A (en) * | 2020-03-23 | 2020-05-29 | 武汉华星光电半导体显示技术有限公司 | OLED display panel, preparation method thereof and OLED display device |
| CN111916485A (en) * | 2020-08-06 | 2020-11-10 | 昆山国显光电有限公司 | Display panel and display device |
| CN212257459U (en) * | 2020-08-10 | 2020-12-29 | 京东方科技集团股份有限公司 | Display panel and display device |
| CN112054048A (en) * | 2020-09-17 | 2020-12-08 | 合肥维信诺科技有限公司 | Light-transmitting display module, display panel and preparation method thereof |
| CN113054133A (en) * | 2021-03-09 | 2021-06-29 | 武汉华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN113629208A (en) * | 2021-07-20 | 2021-11-09 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
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|---|---|
| CN114695790A (en) | 2022-07-01 |
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