CN114675700B - Scaffold safety detection system - Google Patents

Scaffold safety detection system Download PDF

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Publication number
CN114675700B
CN114675700B CN202210344729.5A CN202210344729A CN114675700B CN 114675700 B CN114675700 B CN 114675700B CN 202210344729 A CN202210344729 A CN 202210344729A CN 114675700 B CN114675700 B CN 114675700B
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mos
mos transistor
resistor
grounded
mos tube
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CN114675700A (en
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吴姜
吴旭
顾超
黄超
丁灵龙
禇逸凡
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Nantong Sijian Construction Group Co Ltd
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Nantong Sijian Construction Group Co Ltd
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    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10Regulating voltage or current
    • G05F1/46Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Amplifiers (AREA)

Abstract

The application relates to a scaffold safety detection system which comprises a detection circuit, a patch circuit and an output stabilizing circuit which are sequentially connected. The scaffold safety detection system adopts a passive strain sensor sensitive to pressure strain as a signal receiving port, and the sensor is built on a flexible circuit board to ensure high adaptability of the circuit to application scenes; in the detection circuit, firstly, the pressure change signals acquired by the patch circuit are read and output; in the output stabilizing circuit, a read signal can be stabilized and amplified, then the signal is compared with a threshold value for calculation, and whether an alarm is triggered or not is judged, so that the function of detection and early warning is realized.

Description

Scaffold safety detection system
Technical Field
The application relates to the field of scaffold and safety detection, in particular to a scaffold safety detection system.
Background
The scaffold is a building construction tool erected for safety protection, worker operation and floor horizontal transportation at a construction site, has the advantages of convenience in assembly and disassembly, flexibility in erection, strong universality, economy and the like, and becomes the facility with the largest use amount and most common application in the current building engineering. With the development of the construction industry in China, the collapse accident of the scaffold occurs, and huge casualties and economic losses are caused. Therefore, research into safety control measures for steel pipe scaffold construction is necessary. Analysis of the reasons for these buckling scaffold collapse accidents has revealed that, except for some sudden accidental factors, the reasons can be found from the aspect of procedural safety management. The service cycle of the steel pipe scaffold generally comprises various links of main body construction such as design, scaffold construction, use, disassembly, material equipment overhaul and maintenance and the like. The safety of the fastener type steel pipe scaffold structure can be influenced by the control measures of each link in the service period, if the control measures of the scaffold structure fail, the smooth realization of the progress target of the construction project can be influenced, and the casualties and the huge economic loss can be caused, so that the control of the construction cost is not facilitated.
And the scaffold can be deformed slowly in the continuous use process, because the components are more, the deformation of the scaffold is difficult to monitor, the safety of the scaffold has a large hidden danger, a patch detection circuit is installed at a key position of the scaffold, which is easy to deform, through a scaffold safety detection system, then a detection circuit device is used for inspecting all patch circuit points regularly, the deformation is obtained, the safety detection is carried out, and the overall safety performance of the scaffold is ensured.
As shown in fig. 1, in the current detection circuit of the prior art, the MOS transistor is integrally used as an amplifying element, so that a low-power-consumption and high-stability working state can be realized, but the driving capability is insufficient, the sensitivity is low, and the detection error is easily caused by the influence of the ambient temperature.
As shown in FIG. 2, the prior art pressure-variable sensor circuit is characterized in that the pressure-variable sensor is composed of four resistors, has a simple structure and good sensitivity, is difficult to adapt to rugged ground surface, and has a narrow adaptation field.
Disclosure of Invention
First technical problem
1. The scaffold detection device in the prior art has the defects of narrow application field of the sensor and poor application scene inclusion.
2. The scaffold detection device in the prior art has low sensitivity and low detection precision.
(II) technical scheme
The application provides a scaffold safety detection system aiming at the technical problems, which comprises a patch circuit, a detection circuit and an output stabilizing circuit which are sequentially connected.
The patch circuit detects signals through the passive strain device CB1, the signals enter the inverting terminal of the amplifier U1A after passing through the inductor L1, the diode D1 plays a role in voltage clamping, the capacitor C2 and the resistor R8 play a role in RC filtering, the strain signals are monitored after passing through the amplifier U1A, the output signals are fed back to the inverting terminal of the amplifier U1A after being divided by the MOS tube Q19, the resistor R9 and the resistor R10, the output voltage depends on the ratio of the feedback resistor R9 to the reference voltage, the bandwidth of the error amplifier determines the regulation rate of the output voltage, the acquired signals are output after being filtered by the capacitor C3, the signals are increased in signal output power through the power resistor Q19, RC harmonic signals are generated through the resistor R9, the resistor R10 and the capacitor C3, and the RC harmonic signals are provided for a subsequent circuit to process.
The detection circuit receives signals through the MOS tube Q8, the MOS tube Q9 and the MOS tube Q13, the initial potential of the main circuit is low, at the moment, the MOS tube Q13 is cut off, the MOS tube Q8 is conducted, so that the potential of the MOS tube Q9 can be raised, the MOS tube Q13 is conducted, current is extracted from a current mirror to the main circuit part, the power-on speed is accelerated, the grid potential of the Q13 is raised along with the progress of the power-on process, the MOS tube Q13 is caused to be started, when the MOS tube Q13 is started, the MOS tube Q9 is caused to be cut off, the input circuit is isolated from a core circuit at the back, the main structure of the band gap reference voltage source detection circuit is a current summation structure, and the current mirror (Q7, Q3 and Q4) built by the P-type MOS tube and the current mirror (Q10 and Q11) built by the NMOS tube are used in the circuit to realize that the current of the branches of the triode Q16 and the triode Q18 is equal and provide consistent voltage for the collector of the branch. To ensure that the transistors have disparate current densities, a voltage differential that is positively correlated to a temperature change is achieved through transistors Q16 and Q18, and using resistor R4 to complete the current-to-voltage ground conversion process, resistor R5 and resistor R6 are equal. The right half part is a detection signal enhancement circuit, and the voltage stabilizing circuit is a negative feedback loop consisting of a feedback network and an amplifier and is mainly responsible for providing stable voltage for the main circuit. Wherein the body of the feedback network is the detection core circuit. The amplifier mainly comprises PMOS tubes (Q5, Q6) and NMOS tubes (Q17, Q14 and Q12), and the capacitor C1 is used for compensating the circuit. And finally, outputting detection signals after passing through the MOS transistor Q1 and the MOS transistor Q15.
And the output stabilizing circuit provides a stable and slowly-rising voltage output, ensures the stable output of the circuit and ensures the safety of the device. When the input signal is at a high level, the MOS transistor Q27 is turned on, the triode Q21 is turned off, and when the input signal is at a low level, the MOS transistor Q27 is turned off, the triode Q20 charges the Q22, so that the potential of the Q22 slowly rises, and the Q24 and the Q21 form level shift to avoid a weak inversion region of the MOS transistor. The design core is that a slowly rising reference voltage VRMP can be generated under the condition of normal power-on process, and stable output of signals is ensured.
The scaffold safety detection system is characterized in that a plurality of same patch circuits are attached to positions which are easy to deform on a scaffold through a monitoring scheme of the patch circuits and the detection circuits, then the detection circuits (devices) are used for inspecting all patch circuit points regularly to obtain deformation, safety detection is carried out, and therefore scaffold safety pre-warning is achieved.
(III) beneficial effects
According to the scaffold safety detection system, firstly, the flexible circuit board is introduced, so that the inclusion of the flatness, the inclination angle and the like of the ground is greatly improved; and secondly, the edge pressing sensor is used as a signal receiving end, so that the detection precision is improved, and the circuit structure is simplified. Finally, a detection circuit is designed to further analyze the received signals, so that the accuracy of equipment output is improved.
Drawings
Fig. 1 is a prior art current detection circuit.
Fig. 2 is a prior art pressure sensor circuit.
Fig. 3 is a chip circuit of the present design.
Fig. 4 shows a detection circuit of the present design.
Fig. 5 shows an output stabilizing circuit of the present design.
Detailed Description
The invention is further illustrated below with reference to examples.
As shown in fig. 3, 4 and 5, the application provides a scaffold safety detection system, which comprises a patch circuit, a detection circuit and an output stabilizing circuit which are sequentially connected.
The patch circuit detects signals through the passive strain device CB1, the signals enter the inverting terminal of the amplifier U1A after passing through the inductor L1, the diode D1 plays a role in voltage clamping, the capacitor C2 and the resistor R8 play a role in RC filtering, the strain signals are monitored after passing through the amplifier U1A, the output signals are fed back to the inverting terminal of the amplifier U1A after being divided by the MOS tube Q19, the resistor R9 and the resistor R10, the output voltage depends on the ratio of the feedback resistor R9 to the reference voltage, the bandwidth of the error amplifier determines the regulation rate of the output voltage, the acquired signals are output after being filtered by the capacitor C3, the signals are increased in signal output power through the power resistor Q19, RC harmonic signals are generated through the resistor R9, the resistor R10 and the capacitor C3, and the RC harmonic signals are provided for a subsequent circuit to process.
Specifically, the patch circuit includes INPUT port INPUT, output port Va, patch clamp sensor CB1, diode D1, amplifier U1A, MOS pipe Q19, electric capacity C2, electric capacity C3, electric resistance R8, electric resistance R9, electric resistance R10, inductance L1, patch clamp sensor's one end is connected with INPUT port INPUT, the other end is connected with inductance L1's one end, diode D1's negative pole respectively, inductance L1's the other end is connected with electric capacity C2's one end, electric resistance R8's one end, amplifier U1A's No. 2 interface connection, electric capacity C2's the other end ground connection, electric resistance R8's the other end ground connection, diode D1's positive pole ground connection, electric capacity U1A's No. 8 interface ground connection, electric capacity U1A's No. 4 interface is connected with MOS pipe Q9's source end, electric capacity U1 interface and MOS pipe Q19's grid connection, MOS pipe Q19's drain terminal is connected with electric resistance R9's one end, electric capacity C3's another end ground connection, electric capacity R10's another end ground connection is connected with electric capacity No. 3, amplifier U1's another end ground connection, no. 10 is connected with electric resistance 1's other end ground connection.
The detection circuit receives signals through the MOS tube Q8, the MOS tube Q9 and the MOS tube Q13, the initial potential of the main circuit is low, at the moment, the MOS tube Q13 is cut off, the MOS tube Q8 is conducted, so that the potential of the MOS tube Q9 can be raised, the MOS tube Q13 is conducted, current is extracted from a current mirror to the main circuit part, the power-on speed is accelerated, the grid potential of the Q13 is raised along with the progress of the power-on process, the MOS tube Q13 is caused to be started, when the MOS tube Q13 is started, the MOS tube Q9 is caused to be cut off, the input circuit is isolated from a core circuit at the back, the main structure of the band gap reference voltage source detection circuit is a current summation structure, and the current mirror (Q7, Q3 and Q4) built by the P-type MOS tube and the current mirror (Q10 and Q11) built by the NMOS tube are used in the circuit to realize that the current of the branches of the triode Q16 and the triode Q18 is equal and provide consistent voltage for the collector of the branch. To ensure that the transistors have disparate current densities, a voltage differential that is positively correlated to a temperature change is achieved through transistors Q16 and Q18, and using resistor R4 to complete the current-to-voltage ground conversion process, resistor R5 and resistor R6 are equal. The right half part is a detection signal enhancement circuit, and the voltage stabilizing circuit is a negative feedback loop consisting of a feedback network and an amplifier and is mainly responsible for providing stable voltage for the main circuit. Wherein the body of the feedback network is the detection core circuit. The amplifier mainly comprises PMOS tubes (Q5, Q6) and NMOS tubes (Q17, Q14 and Q12), and the capacitor C1 is used for compensating the circuit. And finally, outputting detection signals after passing through the MOS transistor Q1 and the MOS transistor Q15.
Specifically, the detection circuit comprises an input port Vb, an output port Vc, MOS tubes Q8, Q9, Q13, Q6, Q12, Q14, Q17, Q15, Q2 and Q1, a capacitor C1, resistors R1, R2 and R3, wherein the output port Vb in the detection circuit is respectively connected with the drain end of the MOS tube Q8, the drain end of the MOS tube Q13 and the grid electrode of the MOS tube Q9, the source end of the MOS tube Q8 is connected with one end of a resistor R1, the other end of the resistor R1 is connected with one end of a resistor R2, the other end of the resistor R2 is connected with the source end of the MOS tube Q9, the grid electrode of the MOS tube Q8 is grounded, the source end of the MOS tube Q13 is connected with one end of a resistor R3, the other end of the resistor R3 is grounded, the drain end of the MOS tube Q9 is connected with the grid electrode of the MOS tube Q6, the source end of the MOS tube Q6 is connected with a high level VCC, the drain end of the MOS tube Q6 is connected with the grid electrode of the MOS tube Q12, the drain end of the MOS tube Q12 is respectively connected with the drain end of the MOS tube Q2 and the high level VCC, the source end of the MOS tube Q2 is connected with the source end of the MOS tube Q1, the grid electrode of the MOS tube Q2 is connected with the grid electrode of the MOS tube Q1, one end of a capacitor C1 is connected with the drain end of the MOS tube Q6, and the other end is connected with the drain end of the MOS tube Q2, the source end of the MOS tube Q12 is grounded, the drain end of the MOS tube Q1 is respectively connected with the drain end and the output port Vc of the MOS tube Q15, and the source end of the MOS tube Q15 is grounded. The detection circuit comprises MOS tubes Q13, Q15, Q12, Q9, Q3, Q4, Q5, Q7, Q10, Q11, Q16, Q18, Q14 and Q17, triodes Q16, Q18 and resistors R4, R5, R6 and R7, wherein the source ends of the MOS tubes Q7, Q3, Q4 and Q5 in the detection circuit are connected with a high level VCC, the grid electrode of the MOS tube Q7 is respectively connected with the grid electrode of the MOS tube Q3, the grid electrode of the MOS tube Q4, the grid electrode of the MOS tube Q5, the drain end of the MOS tube Q3 and the drain end of the MOS tube Q10, the drain end of the MOS tube Q7 is respectively connected with the drain end of the MOS tube Q11, the source end of the MOS tube Q11 is respectively connected with one end of a resistor R5 and the emitter of a triode Q18, the other end of the resistor R5 is grounded, the collector of the triode Q18 is grounded, the base of the triode Q18 is connected with the base of a triode Q16, the collector of the triode Q16 is grounded, the emitter of the triode Q16 is connected with one end of a resistor R4, the other end of the resistor R4 is respectively connected with the source end of the MOS tube Q10 and one end of a resistor R6, the other end of the resistor R6 is grounded, the grid electrode of the MOS tube Q10 is respectively connected with the grid electrode of the MOS tube Q11, The drain end of the MOS tube Q9 and the grid electrode of the MOS tube Q6 are connected, the drain end of the MOS tube Q4 is connected with one end of the resistor R7 and the grid electrode of the MOS tube Q13 respectively, the other end of the resistor R7 is grounded, the drain end of the MOS tube Q5 is connected with the drain end of the MOS tube Q17, the grid electrode of the MOS tube Q14, the grid electrode of the MOS tube Q17 and the grid electrode of the MOS tube Q15 respectively, the source end of the MOS tube Q17 is grounded, the source end of the MOS tube Q14 is grounded, and the drain end of the MOS tube Q14 is connected with the grid electrode of the MOS tube Q12.
And the output stabilizing circuit provides a stable and slowly-rising voltage output, ensures the stable output of the circuit and ensures the safety of the device. When the input signal is at a high level, the MOS transistor Q27 is turned on, the triode Q21 is turned off, and when the input signal is at a low level, the MOS transistor Q27 is turned off, the triode Q20 charges the Q22, so that the potential of the Q22 slowly rises, and the Q24 and the Q21 form level shift to avoid a weak inversion region of the MOS transistor. The design core is that a slowly rising reference voltage VRMP can be generated under the condition of normal power-on process, and stable output of signals is ensured.
Specifically, the output stabilizing circuit comprises a diode D2, MOS transistors Q23 and Q26, triodes Q22 and Q20, a capacitor C4 and a resistor R11, wherein the drain end of the MOS transistor Q23 in the output stabilizing circuit is connected with a high level VCC, the anode of the diode D2 is connected with the high level VCC, the cathode of the diode D2 is respectively connected with the grid electrode of the MOS transistor Q23 and the grid electrode of the MOS transistor Q26, the source end of the MOS transistor Q23 is grounded, the source end of the MOS transistor Q26 is grounded, the drain end of the MOS transistor Q26 is connected with the collector of the triode Q22, the emitter of the triode Q22 is connected with the high level VCC, the base of the triode Q20 is connected with the base of the triode Q22, the collector of the triode Q20 is respectively connected with one end of the resistor R11 and one end of the capacitor C4, the other end of the resistor R11 is grounded, and the other end of the capacitor C4 is grounded. The output stabilizing circuit comprises an input port Vc, an output port Vout, a diode D2, MOS transistors Q27 and Q24, triodes Q21 and Q28, wherein the input port Vc in the output stabilizing circuit is respectively connected with the grid electrode of the MOS transistor Q27 and the base electrode of the triode Q28, the source electrode of the MOS transistor Q27 is grounded, the drain end of the MOS transistor Q27 is connected with the base electrode of the triode Q21, the collector electrode of the triode Q21 is connected with a high-level VCC, the emitter electrode of the triode Q21 is respectively connected with the drain end of the MOS transistor Q24 and the collector electrode of the triode Q28, the grid electrode of the MOS transistor Q24 is connected with the negative electrode of the diode D2, the source electrode of the MOS transistor Q24 is grounded, the emitter electrode of the triode Q28 is grounded, and the output port Vout is connected with the drain end of the MOS transistor Q24.
The foregoing describes one embodiment of the present invention in detail, but the description is only a preferred embodiment of the present invention and should not be construed as limiting the scope of the invention. All equivalent changes and modifications within the scope of the present invention are intended to be covered by the present invention.

Claims (3)

1. The utility model provides a scaffold frame safety inspection system, includes paster circuit, detection circuit and the output stabilizing circuit that connects gradually, its characterized in that: the patch circuit comprises an INPUT port INPUT, an output port Va, a patch edge-pressing sensor CB1, a diode D1, an amplifier U1A, MOS pipe Q19, a capacitor C2, a capacitor C3, a resistor R8, a resistor R9, a resistor R10 and an inductor L1, wherein one end of the patch edge-pressing sensor in the patch circuit is connected with the INPUT port INPUT, the other end of the patch edge-pressing sensor is respectively connected with one end of the inductor L1 and the cathode of the diode D1, the other end of the inductor L1 is respectively connected with one end of the capacitor C2, one end of the resistor R8 and a No. 2 interface of the amplifier U1A, the other end of the capacitor C2 is grounded, the other end of the resistor R8 is grounded, the positive electrode of the diode D1 is grounded, the No. 8 interface of the amplifier U1A is connected with the source end of a MOS tube Q19, the No.1 interface of the amplifier U1A is connected with the grid electrode of the MOS tube Q19, the drain end of the MOS tube Q19 is respectively connected with one end of the resistor R9, one end of the capacitor C3 and one end of the output port, the other end of the capacitor C3 is connected with the other end of the resistor C3, the other end of the resistor R9 is grounded, and the other end of the resistor U1 is connected with the amplifier U1 is grounded, and the other end of the resistor is connected with the resistor C1 is grounded;
The detection circuit comprises an input port Vb, an output port Vc, MOS tubes Q8, Q9, Q13, Q6, Q12, Q14, Q17, Q15, Q2 and Q1, a capacitor C1, a resistor R1, R2 and R3, wherein the output port Vb in the detection circuit is respectively connected with the drain end of the MOS tube Q8, the drain end of the MOS tube Q13 and the grid electrode of the MOS tube Q9, the source end of the MOS tube Q8 is connected with one end of the resistor R1, the other end of the resistor R1 is connected with one end of the resistor R2, the other end of the resistor R2 is connected with the source end of the MOS tube Q9, the grid electrode of the MOS tube Q8 is grounded, the source end of the MOS tube Q13 is connected with one end of the resistor R3, the other end of the resistor R3 is grounded, the drain end of the MOS tube Q9 is connected with the grid electrode of the MOS tube Q6, the drain end of the MOS tube Q6 is respectively connected with the drain end of the MOS tube Q2, the drain end of the MOS tube Q2 is connected with the drain end of the MOS tube Q1, the drain end of the MOS tube Q2 is connected with the drain end of the MOS tube Q6, the drain end of the MOS tube Q2 is connected with the drain end of the MOS tube Q1, the drain end of the MOS tube Q2 is connected with the drain end of the MOS tube Q2, the drain end of the MOS tube Q2 is connected with the MOS tube, the drain end of the MOS tube Q1 is connected with the drain end of the MOS tube, the drain end of the MOS tube Q2;
The output stabilizing circuit comprises a diode D2, MOS transistors Q23 and Q26, triodes Q22 and Q20, a capacitor C4 and a resistor R11, wherein the drain end of the MOS transistor Q23 in the output stabilizing circuit is connected with a high level VCC, the anode of the diode D2 is connected with the high level VCC, the cathode of the diode D2 is respectively connected with the grid electrode of the MOS transistor Q23 and the grid electrode of the MOS transistor Q26, the source end of the MOS transistor Q23 is grounded, the source end of the MOS transistor Q26 is grounded, the drain end of the MOS transistor Q26 is connected with the collector electrode of the triode Q22, the emitter electrode of the triode Q22 is connected with the high level VCC, the base electrode of the triode Q20 is connected with the base electrode of the triode Q22, the collector electrode of the triode Q20 is respectively connected with one end of the resistor R11 and one end of the capacitor C4, the other end of the resistor R11 is grounded, and the other end of the capacitor C4 is grounded.
2. The scaffold safety detection system according to claim 1, wherein: the detection circuit comprises MOS transistors Q3, Q4, Q5, Q7, Q10, Q11, Q14 and Q17, triodes Q16 and Q18, resistors R4, R5, R6 and R7, wherein the source ends of the MOS transistors Q7, Q3 and Q4 and Q5 in the detection circuit are all connected with a high level VCC, the grid electrode of the MOS transistor Q7 is respectively connected with the grid electrode of the MOS transistor Q3, the grid electrode of the MOS transistor Q4, the grid electrode of the MOS transistor Q5, the drain end of the MOS transistor Q3 and the drain end of the MOS transistor Q10, the drain end of the MOS transistor Q7 is respectively connected with the drain end of the MOS transistor Q11, the other end of the MOS transistor Q5 is grounded, the base electrode of the triode Q18 is connected with the base electrode of the triode Q16, the emitter of the triode Q16 is grounded, one end of the other end of the triode Q16 is respectively connected with the grid electrode of the MOS transistor Q3, the drain end of the MOS transistor Q6 is respectively connected with the drain end of the MOS transistor Q14, the drain end of the MOS transistor Q10 is grounded, the drain end of the MOS transistor Q14 is respectively connected with the drain end of the MOS transistor Q6 and the drain end of the MOS transistor Q14, the drain end of the MOS transistor Q14 is grounded, the drain end of the MOS transistor Q14 is respectively connected with the drain end of the MOS transistor Q6, the drain end of the MOS transistor Q6 is grounded, the drain end of the MOS transistor Q18 is grounded.
3. The scaffold safety detection system according to claim 2, wherein: the output stabilizing circuit comprises an input port Vc, an output port Vout, MOS transistors Q27 and Q24 and triodes Q21 and Q28, wherein the input port Vc in the output stabilizing circuit is respectively connected with a grid electrode of the MOS transistor Q27 and a base electrode of the triode Q28, a source electrode of the MOS transistor Q27 is grounded, a drain end of the MOS transistor Q27 is connected with a base electrode of the triode Q21, a collector electrode of the triode Q21 is connected with a high level VCC, an emitter electrode of the triode Q21 is respectively connected with a drain end of the MOS transistor Q24 and a collector electrode of the triode Q28, a grid electrode of the MOS transistor Q24 is connected with a cathode electrode of the diode D2, a source electrode of the MOS transistor Q24 is grounded, an emitter electrode of the triode Q28 is grounded, and the output port Vout is connected with a drain end of the MOS transistor Q24.
CN202210344729.5A 2022-04-02 2022-04-02 Scaffold safety detection system Active CN114675700B (en)

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JP2006029931A (en) * 2004-07-15 2006-02-02 Hitachi Ltd Construction structure defect sensor
CN204357868U (en) * 2014-12-30 2015-05-27 中国石油化工股份有限公司 A kind of derrick detection foil gauge site frock
CN206469831U (en) * 2017-01-20 2017-09-05 王兴佳 A kind of scaffold deforms prior-warning device
CN208595875U (en) * 2018-07-03 2019-03-12 安徽中建安科技有限公司 A kind of monitoring device of scaffold stress variation
CN110793426A (en) * 2019-11-06 2020-02-14 中交一公局第八工程有限公司 Scaffold engineering buckling-restrained safety early warning device adopting piezoelectric crystals
CN210536530U (en) * 2019-11-19 2020-05-15 太仓市同维电子有限公司 Voltage output stabilizing circuit based on NMOS (N-channel metal oxide semiconductor) tube
CN210719009U (en) * 2019-11-29 2020-06-09 中冶建筑研究总院(上海)有限公司 System for monitoring structural cracks by adopting conductive patches
CN113849029A (en) * 2021-09-26 2021-12-28 电子科技大学 Under-voltage detection circuit of self-biased reference source

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006029931A (en) * 2004-07-15 2006-02-02 Hitachi Ltd Construction structure defect sensor
CN204357868U (en) * 2014-12-30 2015-05-27 中国石油化工股份有限公司 A kind of derrick detection foil gauge site frock
CN206469831U (en) * 2017-01-20 2017-09-05 王兴佳 A kind of scaffold deforms prior-warning device
CN208595875U (en) * 2018-07-03 2019-03-12 安徽中建安科技有限公司 A kind of monitoring device of scaffold stress variation
CN110793426A (en) * 2019-11-06 2020-02-14 中交一公局第八工程有限公司 Scaffold engineering buckling-restrained safety early warning device adopting piezoelectric crystals
CN210536530U (en) * 2019-11-19 2020-05-15 太仓市同维电子有限公司 Voltage output stabilizing circuit based on NMOS (N-channel metal oxide semiconductor) tube
CN210719009U (en) * 2019-11-29 2020-06-09 中冶建筑研究总院(上海)有限公司 System for monitoring structural cracks by adopting conductive patches
CN113849029A (en) * 2021-09-26 2021-12-28 电子科技大学 Under-voltage detection circuit of self-biased reference source

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