CN114674120A - Semiconductor drying device and method - Google Patents
Semiconductor drying device and method Download PDFInfo
- Publication number
- CN114674120A CN114674120A CN202011555718.9A CN202011555718A CN114674120A CN 114674120 A CN114674120 A CN 114674120A CN 202011555718 A CN202011555718 A CN 202011555718A CN 114674120 A CN114674120 A CN 114674120A
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- Prior art keywords
- wafer
- closed cavity
- dried
- gas
- liquid
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B9/00—Machines or apparatus for drying solid materials or objects at rest or with only local agitation; Domestic airing cupboards
- F26B9/06—Machines or apparatus for drying solid materials or objects at rest or with only local agitation; Domestic airing cupboards in stationary drums or chambers
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B21/00—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
- F26B21/06—Controlling, e.g. regulating, parameters of gas supply
- F26B21/10—Temperature; Pressure
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B21/00—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
- F26B21/14—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects using gases or vapours other than air or steam, e.g. inert gases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Abstract
The invention provides a semiconductor drying device, comprising: sealing the cavity; the rotating bracket is arranged in the closed cavity and used for supporting the wafer to be dried and driving the wafer to be dried to rotate; the gas supply module is communicated with the closed cavity through a pipeline and is used for inputting gas into the closed cavity so as to increase the gas pressure in the closed cavity; and the heater is arranged in the closed cavity and used for providing heat for the wafer or the gas in the closed cavity so as to raise the temperature of the wafer or the gas. The invention can improve the temperature in the drying process and further reduce the surface tension.
Description
Technical Field
The invention relates to the technical field of semiconductor drying, in particular to a semiconductor drying device and method.
Background
The higher the integration of the product, the more limited the wafer drying capability, and poor drying may result in yield and product characteristics problems. To increase the drying capacity, various methods are currently used to reduce the surface tension of the material. The most used IPA (Isopropyl alcohol) drying method at present can only be used up to 70 degrees due to boiling point problem, and the reduction of surface tension has reached the limit.
Disclosure of Invention
The semiconductor drying device and the semiconductor drying method provided by the invention can improve the temperature in the drying process and further reduce the surface tension.
In a first aspect, there is provided a semiconductor drying device comprising:
sealing the cavity;
the rotating bracket is arranged in the closed cavity and used for supporting the wafer to be dried and driving the wafer to be dried to rotate;
the gas supply module is communicated with the closed cavity through a pipeline and is used for inputting gas into the closed cavity so as to increase the gas pressure in the closed cavity;
and the heater is arranged in the closed cavity and used for providing heat for the wafer or the gas in the closed cavity so as to increase the temperature of the liquid for replacing the deionized water.
Optionally, the method further comprises:
and the liquid supply module is communicated with the closed cavity through a pipeline and is used for inputting liquid with surface tension lower than that of the deionized water into the closed cavity so as to replace the deionized water on the surface of the wafer.
Optionally, the sealed chamber is provided with a liquid discharge pipe for discharging the liquid supplied by the liquid supply module and the deionized water displaced from the surface of the wafer.
Optionally, the inner surface of the closed cavity is provided with a protective layer made of a corrosion-resistant material.
Optionally, the sealed cavity is provided with an exhaust duct for exhausting gas in the cavity to reduce the pressure in the sealed cavity to atmospheric pressure.
In a second aspect, the present invention provides a semiconductor drying method comprising:
placing a wafer to be dried in a closed cavity;
filling gas into the closed cavity to raise the pressure of the gas in the closed cavity;
and heating the wafer to be dried so as to dry the wafer to be dried.
Optionally, when the closed cavity is filled with gas, the pressure of the gas in the cavity is controlled to be 1-10 atmospheres.
Optionally, when the wafer to be dried is heated, the temperature of the wafer to be dried is controlled to be 25 ℃ to 200 ℃.
Optionally, before heating the wafer to be dried, the method further includes:
and drying the wafer to be dried by adopting liquid with the surface tension lower than that of the deionized water so as to replace the deionized water by the liquid with the surface tension lower than that of the deionized water.
Optionally, heating the wafer to be dried to dry the wafer to be dried further includes:
and exhausting the gas in the closed cavity to reduce the air pressure in the closed cavity, and taking out the wafer.
By adopting the technical scheme provided by the invention, the boiling point of the cleaning liquid to be dried is increased in a manner of increasing the pressure in the closed cavity, so that the cleaning liquid to be dried can be dried at a higher temperature, and the surface tension of the cleaning liquid can be further reduced when the cleaning liquid to be dried is at the higher temperature, thereby improving the drying capacity of the wafer and improving the quality of semiconductor products.
Drawings
Fig. 1 is a schematic view of a semiconductor drying device according to an embodiment of the present invention.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is illustrative only and is not intended to limit the scope of the present disclosure. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
Various structural schematics according to embodiments of the present disclosure are shown in the figures. The figures are not drawn to scale, wherein certain details are exaggerated and possibly omitted for clarity of presentation. The shapes of various regions, layers, and relative sizes and positional relationships therebetween shown in the drawings are merely exemplary, and deviations may occur in practice due to manufacturing tolerances or technical limitations, and a person skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions, as actually required.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present. In addition, if a layer/element is "on" another layer/element in one orientation, then that layer/element may be "under" the other layer/element when the orientation is reversed.
An embodiment of the present invention provides a semiconductor drying device, as shown in fig. 1, including: sealing the cavity 1; the closed cavity 1 is mainly used for providing a space required by semiconductor drying, and meanwhile, the closed cavity provides a precondition for adjusting the air pressure required by semiconductor drying.
The rotating bracket 2 is arranged in the closed cavity 1 and used for supporting the wafer to be dried and driving the wafer to be dried to rotate; during the semiconductor drying process, it is necessary to uniformly purge the wafer surface with nitrogen gas, and when replacing the deionized water with IPA, the IPA is also required to be uniformly distributed on the wafer surface to uniformly replace the deionized water. The wafer is driven to rotate by the rotating bracket 2, so that the wafer can receive nitrogen purging and an IPA replacement area uniformly in different periods, and IPA can flow and diffuse on the surface of the wafer through centrifugal action, and accordingly IPA can be uniformly distributed.
The gas supply module 4 is communicated with the closed cavity 1 through a pipeline and is used for inputting gas into the closed cavity 1 so as to increase the gas pressure in the closed cavity 1; the gas supply module 4 supplies gas into the chamber to raise the pressure of the entire chamber, thereby providing a condition for raising the boiling point of the wafer surface.
And the heater 3 is arranged in the closed cavity 1 and used for providing heat for the wafer or the gas in the closed cavity 1 so as to raise the temperature of the liquid for replacing the deionized water. After the pressure in the cavity rises, the boiling point of the liquid adhered to the surface of the wafer rises, so that the surface tension of the liquid adhered to the surface of the wafer can be further reduced, and pattern collapse caused by the influence of the surface tension in the drying process is avoided.
By adopting the technical scheme provided by the embodiment, the boiling point of the cleaning liquid to be dried is increased in a manner of increasing the pressure in the closed cavity 1, so that the cleaning liquid to be dried can be dried at a higher temperature, and when the cleaning liquid to be dried is at a higher temperature, the surface tension of the cleaning liquid can be further reduced, thereby improving the drying capacity of the wafer and improving the quality of semiconductor products.
As an optional embodiment, the semiconductor drying apparatus further includes: and the liquid supply module 5 is communicated with the closed cavity 1 through a pipeline and is used for inputting liquid with surface tension lower than that of the deionized water into the closed cavity 1 so as to replace the deionized water on the surface of the wafer. Usually, deionized water is used for cleaning in the cleaning process, and the liquid remaining on the surface of the wafer is also deionized water, but because the surface tension of deionized water is large, the deionized water is replaced by the liquid with the surface tension lower than that of the deionized water, so that the liquid adhered to the surface of the wafer is replaced by the liquid with the lower surface tension, thereby preventing the pattern on the surface of the wafer from collapsing in the drying process, and accelerating the drying process.
As an alternative embodiment, the closed chamber 1 is provided with a liquid discharge pipe 7 for discharging the liquid supplied by the liquid supply module 5 and the deionized water displaced from the wafer surface. In the wafer drying process, in order to avoid the influence on the wafer drying process caused by the re-evaporation and condensation of the replaced deionized water and the redundant liquid, the liquid discharge pipeline 7 is arranged on the closed cavity 1 in the embodiment, so that the deionized water is used for replacing the liquid of the deionized water to be discharged as soon as possible.
As an alternative embodiment, the inner surface of the closed cavity 1 is provided with a protective layer made of a corrosion-resistant material. In the present embodiment, since the sealed chamber 1 contains gas of a relatively high temperature and a relatively high pressure, a danger may occur if the sealed chamber 1 is corroded. Although deionized water is typically used during the cleaning process and IPA is typically used to replace deionized water during the drying process, neither is corrosive. However, in order to avoid the corrosive substances remained on the surface of the wafer from corroding the sealed cavity 1 at a high temperature and pressure in the cleaning process, a layer of corrosion-resistant material is disposed on the inner surface of the sealed cavity 1 to protect the sealed cavity 1 from corroding.
As an alternative embodiment, the closed chamber 1 is provided with an exhaust duct 6 for exhausting the gas in the chamber to reduce the pressure in the closed chamber 1 to the atmospheric pressure. In the wafer drying process, the pressure of the sealed chamber 1 needs to be changed to atmospheric pressure after the drying is completed, and then the wafer needs to be taken out, so in the present embodiment, the exhaust duct 6 is provided on the sealed chamber 1, and the gas in the sealed chamber 1 is exhausted by the exhaust duct 6, thereby adjusting the pressure in the sealed chamber 1.
The embodiment of the invention also provides a semiconductor drying method, which comprises the following steps: placing a wafer to be dried in a closed cavity; the wafer to be dried is placed in the closed cavity, and due to the closed characteristic of the cavity, a precondition is provided for subsequently filling gas into the cavity for pressurization.
Filling gas into the closed cavity to raise the pressure of the gas in the closed cavity; when gas is filled into the closed cavity, inert gas which is not easy to pollute the wafer can be selected, for example, nitrogen can be selected, and the nitrogen does not pollute the wafer, and meanwhile, the method has the characteristics of easiness in preparation, low cost and easiness in storage.
And heating the wafer to be dried so as to dry the wafer to be dried. In the process of heating the wafer to be dried, the temperature of the wafer to be dried can be heated to be higher, and because the gas is filled into the sealed cavity, the air pressure in the sealed cavity rises, and the boiling point of the liquid adhered to the surface of the wafer to be dried also rises, the liquid adhered to the surface of the wafer to be dried can adapt to higher temperature for drying. Meanwhile, along with the rise of the temperature, the surface tension of the liquid adhered to the surface of the wafer to be dried is reduced, and the drying of the wafer is facilitated.
By adopting the technical scheme provided by the embodiment, the boiling point of the cleaning liquid to be dried is increased in a manner of increasing the pressure in the sealed cavity, so that the cleaning liquid to be dried can be dried at a higher temperature, and when the cleaning liquid to be dried is at a higher temperature, the surface tension of the cleaning liquid can be further reduced, thereby improving the drying capacity of the wafer and improving the quality of semiconductor products.
As an optional implementation manner, when the gas is filled into the sealed cavity, the gas pressure in the cavity is controlled to be in a range of 1 atmosphere to 10 atmospheres. In this embodiment, the pressure of the gas injected into the sealed cavity can be selected according to the requirement, for example, 1 atmosphere, 5 atmospheres, or 10 atmospheres. Because the pressure bearing capacity of the closed cavity is related to the structure and the material of the closed cavity, the closed cavity can be selected according to the structure and the material of the closed cavity. Meanwhile, the properties of the liquid adhered to the surface of the wafer can be considered, for example, when the pressure rises to a certain pressure node, the boiling point of the liquid gradually rises slowly, and at this time, the pressure node can be selected as the gas pressure.
As an optional implementation manner, when the wafer to be dried is heated, the temperature of the wafer to be dried is controlled to be in a range of 25 ℃ to 200 ℃. Generally, the drying efficiency is higher when the temperature is higher in the drying process, but other factors should be considered in the drying process, for example, the thermal stress generated by the wafer along with the temperature rise should be considered in the drying process, so as to avoid the wafer damage caused by the excessive thermal stress inside the wafer due to the excessive temperature. The cost and efficiency improvement relationship is also considered, for example, when the temperature is increased to a certain temperature node, the surface tension of the liquid adhered to the surface of the wafer starts to decrease slowly, and then, the temperature is increased again, so that the cost for increasing the temperature is not matched with the improved drying efficiency, and the temperature node is selected as the heating temperature of the wafer.
As an optional embodiment, in each of the foregoing embodiments, before heating the wafer to be dried, the method further includes: and drying the wafer to be dried by adopting liquid with the surface tension lower than that of the deionized water so as to replace the deionized water by the liquid with the surface tension lower than that of the deionized water. In the cleaning process, deionized water is usually used for cleaning, and because the surface tension of deionized water is high, the deionized water should be replaced by a liquid with lower surface tension no matter from the viewpoint of pattern collapse caused by the influence of surface tension or from the viewpoint of drying efficiency, so that the liquid adhered to the surface of the wafer is changed into a liquid with lower surface tension, the pattern will not collapse due to the influence of surface tension, and meanwhile, the low surface tension can also improve the drying efficiency.
As an optional implementation manner, heating the wafer to be dried so as to dry the wafer to be dried further includes: and exhausting the gas in the closed cavity to reduce the air pressure in the closed cavity, and taking out the wafer. In this embodiment, take out the wafer after the pressure in the airtight cavity reduces, can ensure safety on the one hand, and on the other hand, when gas pressure reduces, the boiling point of liquid can reduce thereupon to, at the in-process that gas pressure reduces, can make liquid keep a higher evaporation efficiency, make the liquid evaporation that has not got rid of yet on the wafer surface, avoid remaining liquid after the dry end, can promote wafer drying effect.
In the above description, the technical details of patterning, etching, and the like of each layer are not described in detail. It will be appreciated by those skilled in the art that layers, regions, etc. of the desired shape may be formed by various technical means. In addition, in order to form the same structure, those skilled in the art can also design a method which is not exactly the same as the method described above. In addition, although the embodiments are described separately above, this does not mean that the measures in the embodiments cannot be used in advantageous combination.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A semiconductor drying apparatus, comprising:
sealing the cavity;
the rotating bracket is arranged in the closed cavity and used for supporting the wafer to be dried and driving the wafer to be dried to rotate;
the gas supply module is communicated with the closed cavity through a pipeline and is used for inputting gas into the closed cavity so as to increase the gas pressure in the closed cavity;
and the heater is arranged in the closed cavity and used for providing heat for the wafer or the gas in the closed cavity so as to increase the temperature of the liquid for replacing the deionized water.
2. The semiconductor drying device according to claim 1, further comprising:
and the liquid supply module is communicated with the closed cavity through a pipeline and is used for inputting liquid with surface tension lower than that of the deionized water into the closed cavity so as to replace the deionized water on the surface of the wafer.
3. The semiconductor drying apparatus according to claim 2, wherein the sealed chamber is provided with a liquid discharge pipe for discharging the liquid supplied from the liquid supply module and the deionized water displaced from the surface of the wafer.
4. The semiconductor drying device according to claim 1, wherein an inner surface of the closed chamber is provided with a protective layer made of a corrosion-resistant material.
5. The semiconductor drying apparatus according to claim 1, wherein the sealed chamber is provided with an exhaust duct for exhausting gas inside the chamber to lower the pressure inside the sealed chamber to atmospheric pressure.
6. A semiconductor drying method, comprising:
placing a wafer to be dried in a closed cavity;
filling gas into the closed cavity to raise the pressure of the gas in the closed cavity;
and heating the wafer to be dried so as to dry the wafer to be dried.
7. The semiconductor drying method according to claim 6, wherein when the gas is filled into the sealed cavity, the gas pressure in the cavity is controlled to be in a range of 1 atmosphere to 10 atmospheres.
8. The semiconductor drying method according to claim 6, wherein the wafer to be dried is controlled to have a temperature in a range of 25 ℃ to 200 ℃ when the wafer to be dried is heated.
9. The semiconductor drying method according to claim 6, further comprising, before heating the wafer to be dried:
and drying the wafer to be dried by adopting liquid with the surface tension lower than that of the deionized water so as to replace the deionized water by the liquid with the surface tension lower than that of the deionized water.
10. The semiconductor drying method according to claim 6, wherein after heating the wafer to be dried to dry the wafer to be dried, the method further comprises:
and exhausting the gas in the closed cavity to reduce the air pressure in the closed cavity, and taking out the wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011555718.9A CN114674120A (en) | 2020-12-24 | 2020-12-24 | Semiconductor drying device and method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011555718.9A CN114674120A (en) | 2020-12-24 | 2020-12-24 | Semiconductor drying device and method |
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| CN114674120A true CN114674120A (en) | 2022-06-28 |
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| CN202011555718.9A Pending CN114674120A (en) | 2020-12-24 | 2020-12-24 | Semiconductor drying device and method |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6446355B1 (en) * | 1999-05-27 | 2002-09-10 | Lam Research Corporation | Disk drying apparatus and method |
| CN102148133A (en) * | 2010-12-06 | 2011-08-10 | 北京七星华创电子股份有限公司 | Single-wafer drying device and method |
| CN103153490A (en) * | 2010-10-28 | 2013-06-12 | 朗姆研究公司 | Method and apparatus for drying semiconductor wafer |
| CN104941957A (en) * | 2014-03-24 | 2015-09-30 | 睿励科学仪器（上海）有限公司 | Wafer cleaning device and method |
| US20160025409A1 (en) * | 2013-03-07 | 2016-01-28 | Shibaura Mechatronics Corporation | Substrate processing apparatus and substrate processing method |
| CN107424908A (en) * | 2016-05-24 | 2017-12-01 | 江苏鲁汶仪器有限公司 | A kind of wafer processing device and method |
| CN208444813U (en) * | 2018-07-27 | 2019-01-29 | 长鑫存储技术有限公司 | A kind of wafer wet treatment apparatus |
-
2020
- 2020-12-24 CN CN202011555718.9A patent/CN114674120A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6446355B1 (en) * | 1999-05-27 | 2002-09-10 | Lam Research Corporation | Disk drying apparatus and method |
| CN103153490A (en) * | 2010-10-28 | 2013-06-12 | 朗姆研究公司 | Method and apparatus for drying semiconductor wafer |
| CN102148133A (en) * | 2010-12-06 | 2011-08-10 | 北京七星华创电子股份有限公司 | Single-wafer drying device and method |
| US20160025409A1 (en) * | 2013-03-07 | 2016-01-28 | Shibaura Mechatronics Corporation | Substrate processing apparatus and substrate processing method |
| CN104941957A (en) * | 2014-03-24 | 2015-09-30 | 睿励科学仪器（上海）有限公司 | Wafer cleaning device and method |
| CN107424908A (en) * | 2016-05-24 | 2017-12-01 | 江苏鲁汶仪器有限公司 | A kind of wafer processing device and method |
| CN208444813U (en) * | 2018-07-27 | 2019-01-29 | 长鑫存储技术有限公司 | A kind of wafer wet treatment apparatus |
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