CN114664691A - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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CN114664691A
CN114664691A CN202111524719.1A CN202111524719A CN114664691A CN 114664691 A CN114664691 A CN 114664691A CN 202111524719 A CN202111524719 A CN 202111524719A CN 114664691 A CN114664691 A CN 114664691A
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mixing device
exhaust
mixed liquid
rotation speed
liquid
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根岸康介
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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Abstract

The invention provides a substrate processing apparatus and a substrate processing method, which can reduce the combustible gas concentration in the gas flowing in an exhaust passage and discharged from a mixing device for mixing a phosphoric acid aqueous solution and a precipitation inhibitor. The processing tank is used for immersing the substrate in the processing liquid for processing. The mixing device mixes the phosphoric acid aqueous solution with an additive containing an organic solvent to produce a mixed solution as a raw material of the treatment liquid. The heating unit is provided in the mixing device and heats the mixed liquid. The liquid feeding path feeds the mixed liquid from the mixing device to the treatment tank. The exhaust fan exhausts the gas in the mixing device. The exhaust passage is used for guiding the gas exhausted from the mixing device. The control unit controls each unit. The control unit adjusts the amount of exhaust gas discharged from the mixing device to the exhaust duct by the exhaust fan.

Description

Substrate processing apparatus and substrate processing method
Technical Field
The disclosed embodiments relate to a substrate processing apparatus and a substrate processing method.
Background
There is known a technique of immersing a substrate in an aqueous solution containing phosphoric acid and a silicon-inhibited oxide in a substrate processing systemCompound (SiO)2) The substrate is etched in the etchant containing the deposited additive (see patent document 1).
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2017-118092
Disclosure of Invention
Technical problem to be solved by the invention
The present disclosure provides a technique capable of reducing a combustible gas concentration in a gas flowing in an exhaust passage discharged from a mixing device for mixing a phosphoric acid aqueous solution with a precipitation inhibitor.
Means for solving the problems
A substrate processing apparatus according to an aspect of the present disclosure includes a processing bath, a mixing device, a heating portion, a liquid feeding path, an exhaust fan, an exhaust passage, and a control portion. The processing tank is used for immersing the substrate in the processing liquid for processing. The mixing device mixes the phosphoric acid aqueous solution with an additive containing an organic solvent to generate a mixed solution as a raw material of the treatment liquid. The heating unit is provided in the mixing device and heats the mixed liquid. The liquid feeding path feeds the mixed liquid from the mixing device to the treatment tank. The exhaust fan exhausts the gas in the mixing device. The exhaust passage is used for guiding the gas exhausted from the mixing device. The control unit controls each unit. The control unit adjusts the amount of exhaust gas discharged from the mixing device to the exhaust passage by the exhaust fan.
Effects of the invention
With the present disclosure, it is possible to reduce the combustible gas concentration in the gas flowing in the exhaust passage discharged from the mixing device for mixing the phosphoric acid aqueous solution with the precipitation inhibitor.
Drawings
Fig. 1 is a schematic block diagram showing a structure of a substrate processing system according to an embodiment.
FIG. 2 is a timing chart showing a specific example of an operation pattern of each part of the substrate processing system in various processes performed when the mixed liquid is first transferred to the processing bath according to the embodiment.
FIG. 3 is a timing chart showing a specific example of an operation pattern of each part of the substrate processing system in various processes performed when the mixed liquid is first supplied to the processing bath according to the embodiment.
FIG. 4 is a timing chart showing a specific example of an operation pattern of each part of the substrate processing system in various processes performed when the silicon concentration of the etching solution in the processing bath is adjusted according to the embodiment.
Fig. 5 is a schematic block diagram showing the configuration of an exhaust unit of the substrate processing system according to the embodiment.
Fig. 6 is a timing chart showing a specific example of an operation pattern of each part of the exhaust unit in various processes performed when the mixed liquid is transported in the mixing device of the embodiment.
Fig. 7 is a schematic block diagram showing a configuration of a substrate processing system according to a modification of the embodiment.
Fig. 8 is a diagram showing a specific example of a process flow of each part of the substrate processing system according to the modified example of the embodiment.
Fig. 9 is a schematic block diagram showing the configuration of an exhaust unit of a substrate processing system according to a modification of the embodiment.
Fig. 10 is a timing chart showing a specific example of an operation pattern of each part of the exhaust unit in various processes performed when the mixed liquid is first conveyed in the mixing device according to the modification of the embodiment.
Fig. 11 is a timing chart showing a specific example of an operation pattern of each part of the exhaust unit in various processes performed when the mixed liquid is continuously fed to the mixing device according to the modification of the embodiment.
Fig. 12 is a flowchart showing processing steps of substrate processing according to the embodiment.
Description of the reference numerals
1 substrate processing System (one example of substrate processing apparatus)
3 control part
10. 10A-10C mixing device
19 first heater (an example of heating part)
22. 22A-22C liquid feeding path
31. 31A-31C treatment tank
60 exhaust part
61. 61A-61C exhaust fan
62 exhaust passage
64 gas supply line
65 air supply fan
66. 67, 67A-67C gas concentration meter
W wafer (one example of substrate)
M mixed solution
E etching solution (an example of a treating solution)
Detailed Description
Embodiments of the substrate processing apparatus and the substrate processing method disclosed in the present application are described in detail below with reference to the accompanying drawings. However, the present disclosure is not limited to the embodiments described below. Note that the drawings are schematic, and the relationship between the sizes of the elements, the proportions of the elements, and the like may be different from those in reality. Further, the drawings may include portions having different dimensional relationships and ratios.
In a substrate processing system, it is known that a substrate is immersed in an etching solution containing an aqueous phosphoric acid solution and an additive for suppressing deposition of silicon oxide, and is subjected to an etching process.
For example, by immersing the substrate in phosphoric acid (H)3PO4) In an aqueous solution, a silicon nitride film (SiN) and a silicon oxide film (SiO) laminated on a substrate can be selectively etched2) The silicon nitride film of (1).
Further, by adding an additive for suppressing the deposition of silicon oxide (hereinafter also referred to as "deposition inhibitor") to the phosphoric acid aqueous solution, the deposition of silicon oxide on the silicon oxide film during the etching process can be suppressed.
However, in the above-described conventional technique, when a mixed solution obtained by mixing the phosphoric acid aqueous solution and the precipitation inhibitor is heated, the organic solvent contained in the precipitation inhibitor may evaporate to generate a combustible gas. If the gas containing this combustible gas is directly discharged from the mixing device, the concentration of the combustible gas in the exhaust passage increases, and there is a possibility that the lower explosion limit may be approached.
For this reason, it is desired to realize a technique capable of reducing the combustible gas concentration in the gas flowing in the exhaust passage discharged from the mixing device for mixing the phosphoric acid aqueous solution with the precipitation inhibitor, while overcoming the above-described problems.
< Structure of substrate processing System >
First, the structure of the substrate processing system 1 according to the embodiment will be described with reference to fig. 1. Fig. 1 is a schematic block diagram showing the configuration of a substrate processing system 1 according to the embodiment. The substrate processing system 1 is an example of a substrate processing apparatus.
The substrate processing system 1 includes a mixing device 10, a silicon solution supply section 25, and a substrate processing section 30. The mixing apparatus 10 mixes the phosphoric acid aqueous solution and the deposition inhibitor for inhibiting deposition of silicon oxide to produce a mixed solution M. The precipitation inhibitor is an example of an additive.
The silicon solution supply unit 25 supplies a silicon-containing compound aqueous solution (hereinafter also referred to as a silicon solution) to the mixed solution M generated by the mixing device 10 to generate an etching solution E. That is, the etching solution E of the embodiment includes a phosphoric acid aqueous solution, a precipitation inhibitor, and a silicon solution. The etching solution E is an example of a processing solution.
The substrate processing unit 30 immerses the wafer W in the generated etching solution E in the processing bath 31, and performs etching processing on the wafer W. The wafer W is an example of a substrate. In the embodiment, for example, a silicon nitride film (SiN) and a silicon oxide film (SiO) formed on the wafer W can be selectively etched2) The silicon nitride film of (1).
The substrate processing system 1 further comprises a control device 2. The control device 2 is, for example, a computer, and includes a control unit 3 and a storage unit 4. The storage unit 4 stores a program for controlling various processes executed in the substrate processing system 1. The control unit 3 reads and executes the program stored in the storage unit 4 to control the operation of the substrate processing system 1.
The program may be recorded in a computer-readable storage medium and installed from the storage medium to the storage unit 4 of the control device 2. Examples of the computer-readable storage medium include a Hard Disk (HD), a Flexible Disk (FD), an optical disk (CD), a magneto-optical disk (MO), and a memory card.
The mixing device 10 includes a phosphoric acid aqueous solution supply part 11, a precipitation inhibitor supply part 12, a container 14, and a circulation path 15.
The phosphoric acid aqueous solution supply unit 11 supplies the phosphoric acid aqueous solution to the container 14. The phosphoric acid aqueous solution supply part 11 includes a phosphoric acid aqueous solution supply source 11a, a phosphoric acid aqueous solution supply path 11b, and a flow regulator 11 c.
The phosphoric acid aqueous solution supply source 11a is, for example, a container in which a phosphoric acid aqueous solution is stored. The phosphoric acid aqueous solution supply path 11b connects the phosphoric acid aqueous solution supply source 11a and the tank 14, and supplies the phosphoric acid aqueous solution from the phosphoric acid aqueous solution supply source 11a to the tank 14.
The flow rate regulator 11c is provided in the phosphoric acid aqueous solution supply path 11b and regulates the flow rate of the phosphoric acid aqueous solution supplied to the tank 14. The flow rate regulator 11c is constituted by an opening/closing valve, a flow rate control valve, a flow meter, and the like.
The deposition inhibitor supply unit 12 supplies the deposition inhibitor to the container 14. The deposition-suppressing-agent supply unit 12 includes a deposition-suppressing-agent supply source 12a, a deposition-suppressing-agent supply path 12b, and a flow rate regulator 12 c.
The deposition inhibitor supply source 12a is, for example, a container in which the deposition inhibitor is stored. The deposition inhibitor supply path 12b connects the deposition inhibitor supply source 12a to the container 14, and supplies the deposition inhibitor from the deposition inhibitor supply source 12a to the container 14.
The flow rate regulator 12c is provided in the deposition inhibitor supply path 12b and regulates the flow rate of the deposition inhibitor supplied to the container 14. The flow rate regulator 12c is constituted by an opening/closing valve, a flow rate control valve, a flow meter, and the like.
The deposition inhibitor of the embodiment may contain a component capable of inhibiting deposition of silicon oxide. For example, a component for stabilizing silicon ions dissolved in an aqueous phosphoric acid solution in a dissolved state to suppress precipitation of silicon oxide may be contained. Further, a component for suppressing the deposition of silicon oxide by other known methods may be contained.
For example, an aqueous hexafluorosilicic acid (H2SiF6) solution containing a fluorine component can be used as the deposition inhibitor of the embodiment. In addition, an additive such as ammonia may be contained in order to stabilize hexafluorosilicic acid in the aqueous solution.
As the deposition inhibitor of the embodiment, for example, ammonium hexafluorosilicate (NH) can be used4)2SiF6Sodium hexafluorosilicate (Na)2SiF6) And the like.
The deposition inhibitor of the embodiment may be a compound containing an element having an ion with an ionic radius of
Figure BDA0003409742270000053
To
Figure BDA0003409742270000054
A cation of (2). Here, the "ionic radius" refers to the radius of an ion obtained by obtaining the sum of the radii of an anion and a cation based on the lattice constant of the lattice and empirically obtaining the sum of the radii.
The deposition inhibitor according to the embodiment may be an oxide containing any one element of aluminum, potassium, lithium, sodium, magnesium, calcium, zirconium, tungsten, titanium, molybdenum, hafnium, nickel, and chromium, for example.
The deposition inhibitor of the embodiment may contain at least one of a nitride, a chloride, a bromide, a hydroxide, and a nitrate of any one of the elements in place of or in addition to the oxide of any one of the elements.
The deposition inhibitor of the embodiment may contain, for example, Al (OH)3、AlCl3、AlBr3、Al(NO3)3、Al2(SO4)3、AlPO4And Al2O3At least one of (1).
The deposition inhibitor of the embodiment may contain KCl, KBr, KOH, and KNO3At least one of (1). Further, the deposition inhibitor of the embodiment may contain LiCl, NaCl, MgCl2、CaCl2And ZrCl4At least one of (1).
In addition, the deposition inhibitor of the embodiment includes a water-soluble organic solvent. Examples of the organic solvent include ethanol, methanol, acetone, 1-propanol, 2-propanol, 1-butanol, and 2-butanol.
The tank 14 stores the phosphoric acid aqueous solution supplied from the phosphoric acid aqueous solution supply unit 11 and the deposition inhibitor supplied from the deposition inhibitor supply unit 12. The container 14 also stores a mixed solution M produced by mixing the phosphoric acid aqueous solution and the precipitation inhibitor.
In the container 14, a first liquid level sensor S1 and a second liquid level sensor S2 are provided in this order from the top. This makes it possible to control the liquid level of the phosphoric acid aqueous solution or the mixed solution M stored in the container 14. In the embodiment, the amounts of the phosphoric acid aqueous solution and the precipitation inhibitor can be measured by using the first liquid level sensor S1 and the second liquid level sensor S2.
The circulation path 15 is a circulation line that starts from the container 14 and returns to the container 14. The circulation path 15 has an inlet provided at the bottom of the container 14 and an outlet provided at the upper part of the container 14, and forms a circulation flow flowing from the inlet to the outlet. In the embodiment, the outlet is disposed above the liquid surface of the mixed liquid M stored in the container 14.
In the circulation path 15, a first pump 16, an opening/closing valve 17, a filter 18, a first heater 19, a phosphoric acid concentration sensor 52, a branching portion 15a, a branching portion 15b, and a valve 20 are provided in this order from the upstream side with respect to the tank 14. The first heater 19 is an example of a heating portion.
First pump 16 is used to form a circulation flow of mixed liquid M that starts from container 14 and returns to container 14 through circulation path 15.
Filter 18 removes contaminants such as particles contained in mixed liquid M circulating through circulation path 15. A bypass passage 21 through which the filter 18 can be bypassed is provided in the circulation passage 15, and an opening/closing valve 21a is provided in the bypass passage 21.
Then, by alternately opening and closing the opening and closing valve 17 provided in the circulation path 15 and the opening and closing valve 21a provided in the bypass flow path 21, either the circulation flow passing through the filter 18 or the circulation flow bypassing the filter 18 can be formed.
The first heater 19 heats the mixed liquid M circulating in the circulation path 15. In the embodiment, the mixed liquid M stored in the container 14 is heated by heating the mixed liquid M by the first heater 19.
The phosphoric acid concentration sensor 52 detects the phosphoric acid concentration of the mixed liquid M circulating in the circulation path 15. The signal generated by the phosphoric acid concentration sensor 52 is sent to the control unit 3.
The liquid feeding paths 22 for feeding the mixed liquid M to the processing bath 31 of the substrate processing section 30 are branched from the branch portions 15a and 15b, respectively. Specifically, a first liquid feeding path 22a for feeding the mixed liquid M to the inner tank 31a of the treatment tank 31 branches from the branch portion 15a, and a second liquid feeding path 22b for feeding the mixed liquid M to the outer tank 31b of the treatment tank 31 branches from the branch portion 15 b. That is, the liquid feeding path 22 includes a first liquid feeding path 22a and a second liquid feeding path 22 b.
The first liquid feeding path 22a is provided with a first flow rate regulator 23 a. The first flow rate regulator 23a regulates the flow rate of the mixed liquid M supplied to the inner tank 31a of the processing tank 31. The first flow rate regulator 23a is constituted by an on-off valve, a flow rate control valve, a flow meter, and the like.
The second liquid feeding path 22b is provided with a second flow rate regulator 23b, a thermometer 53, a branch portion 22b1, a flow meter 55, a constant pressure valve 56, a throttle valve 57, a branch portion 22b2, and a valve 58 in this order from the upstream side.
The second flow rate adjuster 23b adjusts the flow rate of the mixed liquid M supplied to the outer tank 31b of the treatment tank 31. The second flow rate regulator 23b is constituted by an on-off valve, a flow rate control valve, a flow meter, and the like. The thermometer 53 measures the temperature of the liquid mixture M flowing through the second liquid feeding path 22 b.
First return path 24a for returning mixed liquid M to container 14 is branched from branching portion 22b 1. The first return path 24a has a back pressure valve 54. The back pressure valve 54 adjusts the pressure in the first return path 24a on the upstream side of the back pressure valve 54 (for example, the branch portion 22b 1).
The flow meter 55 measures the flow rate of the mixed liquid M flowing through the second liquid feeding path 22 b. The flow meter 55 corrects the flow rate of the mixed liquid M based on the temperature of the mixed liquid M measured by the thermometer 52. For example, the control unit 3 corrects the flow rate information of the mixed liquid M obtained from the flowmeter 55 based on the temperature information of the mixed liquid M obtained from the thermometer 52.
Thus, in the embodiment, even when the temperature of the mixed liquid M greatly changes in the range from room temperature to a high temperature, the flow rate of the mixed liquid M flowing through the flow meter 55 can be measured with high accuracy.
The constant pressure valve 56 regulates the pressure in the second liquid feeding path 22b on the downstream side of the constant pressure valve 56. The throttle valve 57 regulates the flow rate of the mixed liquid M flowing through the second liquid feeding path 22 b.
Second return path 24b for returning mixed liquid M to container 14 is branched from branching portion 22b 2. In this way, in the embodiment, the return path 24 including the first return path 24a and the second return path 24b branches from the second liquid feeding path 22b, and the return path 24 returns the mixed liquid M flowing through the second liquid feeding path 22b to the container 14. The second return path 24b has a valve 59.
The control unit 3 alternately opens and closes the valves 58 and 59. Thereby, the control unit 3 can switchably convey the mixed liquid M to the outer tank 31b or the container 14.
The silicon solution supply unit 25 adds a silicon solution to the mixed solution M generated by the mixing device 10. The silicon solution of the embodiment is, for example, a solution in which colloidal silica is dispersed. The silicon solution supply unit 25 includes a silicon solution supply source 25a, a silicon solution supply path 25b, and a flow regulator 25 c.
The silicon solution supply source 25a is, for example, a container in which a silicon solution is stored. The flow rate regulator 25c is provided in the silicon solution supply path 25b and regulates the flow rate of the silicon solution flowing through the silicon solution supply path 25 b. The silicon solution supply path 25b is connected to the outer tank 31b of the treatment tank 31. The flow rate regulator 25c is constituted by an opening/closing valve, a flow rate control valve, a flow meter, and the like.
The substrate processing unit 30 immerses the wafer W in the etching solution E generated by the mixing device 10, and performs etching processing on the wafer W.
The substrate treating section 30 includes a treating bath 31, a circulation path 32, a DIW supply section 33, and a treating liquid discharge section 34. The processing bath 31 includes an inner bath 31a and an outer bath 31 b.
The upper part of the inner tank 31a is opened, and the etching liquid E is supplied to the vicinity of the upper part. In the inner tank 31a, a plurality of wafers W are immersed in the etching solution E by the substrate elevating mechanism 35, and etching processing is performed on the wafers W. The substrate lifting mechanism 35 is configured to be lifted and lowered, and holds a plurality of wafers W in a vertical posture and arranged in the front-rear direction.
The outer tank 31b is provided around the upper portion of the inner tank 31a, and the upper portion is open. The etching liquid E overflowing from the inner tank 31a can flow into the outer tank 31 b.
The outer tank 31b is provided with a third liquid level sensor S3. This makes it possible to control the liquid level of the mixed liquid M or the etching liquid E stored in the outer tank 31 b. In the embodiment, the amount of the liquid mixture M can be measured by using the third liquid level sensor S3. The details of the weighing process of the mixed solution M will be described later.
The mixed liquid M is supplied from the mixing device 10 to the inner tank 31a and the outer tank 31b via the liquid feeding path 22. Then, the silicon solution is supplied from the silicon solution supply portion 25 to the inner tank 31 a. Further, DIW (DeIonized Water) is supplied from the DIW supply section 33 to the outer tank 31 b.
The DIW supply part 33 includes a DIW supply source 33a, a DIW supply path 33b, and a flow regulator 33 c. The DIW supply unit 33 supplies DIW to the outer tank 31b in order to adjust the concentration of the etching solution E stored in the processing tank 31.
The DIW supply path 33b connects the DIW supply source 33a and the outer tank 31b, and supplies DIW at a predetermined temperature from the DIW supply source 33a to the outer tank 31 b.
The flow rate regulator 33c is provided in the DIW supply path 33b and regulates the amount of DIW supplied to the outer tank 31 b. The flow rate regulator 33c is constituted by an opening/closing valve, a flow rate control valve, a flow meter, and the like. By adjusting the supply amount of DIW by the flow rate adjuster 33c, the temperature of the etching liquid E, the phosphoric acid concentration, the silicon concentration, and the deposition inhibitor concentration can be adjusted.
In addition, a temperature sensor 36 and a phosphoric acid concentration sensor 37 are provided in the outer tank 31 b. The temperature sensor 36 detects the temperature of the etching solution E, and the phosphoric acid concentration sensor 37 detects the phosphoric acid concentration of the etching solution E. The signals generated by the temperature sensor 36 and the phosphoric acid concentration sensor 37 are sent to the control unit 3.
The outer tank 31b and the inner tank 31a are connected by a circulation path 32. One end of the circulation path 32 is connected to the bottom of the outer tank 31b, and the other end of the circulation path 32 is connected to a processing liquid supply nozzle 38 provided in the inner tank 31 a.
In the circulation path 32, a second pump 39, a filter 40, a second heater 41, and a silicon concentration sensor 42 are provided in this order from the outer tank 31b side.
The second pump 39 is for forming a circulating flow of the etching solution E transferred from the outer tank 31b to the inner tank 31a via the circulation path 32. The etching liquid E overflows from the inner tank 31a and flows out to the outer tank 31 b. Thus, a circulating flow of the etching solution E is formed in the substrate processing section 30. That is, the circulating flow is formed in the outer tank 31b, the circulating path 32, and the inner tank 31 a.
The filter 40 filters the etching solution E circulating in the circulation path 32. The second heater 41 adjusts the temperature of the etching solution E circulating in the circulation path 32. The silicon concentration sensor 42 detects the silicon concentration of the etching solution E circulating in the circulation path 32. The signal generated by the silicon concentration sensor 42 is sent to the control unit 3.
The treatment liquid discharger 34 discharges the mixed liquid M and the etching liquid E to the drain DR when, for example, the mixed liquid M stored when the etching liquid E is generated or all or part of the etching liquid E used in the etching treatment is replaced. The treatment liquid discharge portion 34 includes a discharge path 34a, a flow rate regulator 34b, and a cooling container 34 c.
The discharge path 34a is connected to the circulation path 32. The flow rate regulator 34b is provided in the discharge path 34a and regulates the discharge amount of the discharged mixed solution M and etching solution E. The flow rate regulator 34b is constituted by an on-off valve, a flow rate control valve, a flow meter, and the like.
The cooling container 34c temporarily stores and cools the mixed liquid M and the etching liquid E flowing through the discharge path 34 a. In the cooling vessel 34c, the discharge amounts of the mixed liquid M and the etching liquid E are adjusted by the flow rate adjuster 34 b.
< step of substrate treatment >
Next, the steps of substrate processing according to the embodiment will be described with reference to fig. 2 to 4. Fig. 2 and 3 are timing charts showing specific examples of operation modes of each part of the substrate processing system 1 in various processes performed when the mixed liquid M is first transferred to the processing bath 31 according to the embodiment.
Fig. 2 shows the first half of each process when the mixed liquid M is first fed to the treatment tank 31, and fig. 3 shows the second half of each process when the mixed liquid M is first fed to the treatment tank 31.
As shown in fig. 2 and 3, in the embodiment, the mixing treatment, the heating treatment, the filtering treatment, the liquid feeding treatment, and the adding treatment are performed in this order. First, the controller 3 starts the mixing process by activating the phosphoric acid aqueous solution supplier 11 (turning ON) at time T0 and supplying the phosphoric acid aqueous solution to the container 14.
At the time point of the time T0, the deposition inhibitor supply unit 12, the first pump 16, and the first heater 19 are not operated (an inactive (OFF) state). At the time of time T0, the on-off valve 17 is in the closed state and the on-off valve 21a is in the open state, and therefore the filter 18 is in the state of being bypassed by the bypass flow path 21 (the filter bypass is in the active state).
At the time T0, the first flow rate regulator 23a and the second flow rate regulator 23b are in the closed state (inactive state), and nothing is stored in the tank 14, so that the first liquid level sensor S1 and the second liquid level sensor S2 output OFF signals.
Then, at time T1 when a predetermined amount of phosphoric acid aqueous solution is supplied to the container 14, the control unit 3 operates (turns on) the first pump 16 to form a circulating flow in the circulation path 15.
Subsequently, the liquid level of the phosphoric acid aqueous solution stored in the tank 14 gradually rises, and when the liquid level reaches the predetermined second height or more at time T2, an ON signal is output from the second liquid level sensor S2. Then, the control unit 3 starts the operation of the deposition inhibitor supply unit 12 (becomes an active state) at time T2, supplies the deposition inhibitor to the container 14, and stops the phosphoric acid aqueous solution supply unit 11 (becomes an inactive state).
Next, at time T3 when a predetermined amount of the deposition inhibitor is supplied to the container 14, the control unit 3 stops (becomes inactive) the deposition inhibitor supply unit 12, operates (becomes active) the phosphoric acid aqueous solution supply unit 11, and supplies the phosphoric acid aqueous solution to the container 14.
When the liquid level of the mixed liquid M becomes equal to or higher than the predetermined first height at time T4, an ON signal is output from the first liquid level sensor S1. Then, the control unit 3 determines that a predetermined amount of phosphoric acid aqueous solution has been supplied to the container 14, and stops the phosphoric acid aqueous solution supply unit 11 at time T4 (becomes an inactive state). This completes the mixing process, and a mixed solution M in which phosphoric acid and the precipitation inhibitor have a predetermined concentration is generated in the mixing device 10.
In this way, the control unit 3 operates the first pump 16 before supplying the deposition inhibitor to the container 14. This enables a circulating flow to be formed in the circulation path 15 before the deposition inhibitor is supplied, and thus the mixing property between the phosphoric acid aqueous solution and the deposition inhibitor can be improved.
The control unit 3 does not supply the phosphoric acid aqueous solution and the deposition inhibitor to the container 14 at the same time, but supplies them to the container 14 separately. This can prevent the ON signal from being output from the first liquid level sensor S1 until a predetermined amount of the deposition inhibitor is supplied. Thus, according to the embodiment, a predetermined amount of the deposition inhibitor can be reliably supplied to the container 14.
Next, control unit 3 activates first heater 19 (becomes active state) from time T4, and heats mixed liquid M circulating in circulation path 15, thereby starting the heating process. The controller 3 heats the mixed liquid M stored in the container 14 by heating the mixed liquid M by the first heater 19.
Then, the heating treatment is completed at time T5 when the temperature of the mixed liquid M reaches a predetermined temperature. The predetermined temperature in the heating treatment of the embodiment is a temperature higher than the boiling point of the organic solvent contained in the precipitation inhibitor, and is, for example, about 170 (deg.c).
In the embodiment, the first heater 19 is provided in the circulation path 15 of the mixing device 10, whereby the mixed liquid M can be efficiently heated.
In the substrate processing of the embodiment, the heating process is started after the mixing process is completed. This is because if a deposition inhibitor containing an organic solvent is supplied to a phosphoric acid aqueous solution whose temperature rises after heating, bumping of the deposition inhibitor may occur.
That is, according to the embodiment, the occurrence of bumping of the deposition inhibitor at the time of supply can be suppressed by starting the heating treatment after the completion of the mixing treatment.
Next, the control unit 3 starts the filtration process by turning the filter bypass to the disabled state at time T5. That is, at time T5, control unit 3 changes opening/closing valve 17 to the open state and opening/closing valve 21a to the closed state, thereby forming the circulating flow through filter 18 in circulation path 15.
Thereby, contaminants such as particles contained in the mixed liquid M are removed. Then, at time T6 when contaminants such as particles contained in the mixed solution M have been sufficiently removed, the filtration process is completed.
Further, the control unit 3 stops (becomes an inactive state) the first heater 19 at time T6 when the filtering process is completed. This can prevent the phosphoric acid concentration of the mixed liquid M in the mixing device 10 from becoming higher than a desired concentration.
In the substrate treatment of the embodiment, the filter bypass is made effective during the mixing treatment and the heating treatment. This can reduce the pressure loss in the circulation path 15 due to the filter 18, and thus the mixed liquid M stored in the container 14 can be efficiently circulated.
Further, since it is not necessary to filter the mixed liquid M by the filter 18 before the heat treatment is completed, there is no particular problem even if the mixed liquid M is circulated through the bypass passage 21.
Next, the control unit 3 starts the liquid feeding process at time T6. Specifically, the control unit 3 sets the first flow rate regulator 23a to the on state (the active state) from time T6. The second flow regulator 23b is maintained in the closed state. Although not shown in fig. 2 and the like, the control unit 3 changes the valve 20 of the circulation path 15 from the open state to the closed state at time T6.
Thus, the control unit 3 conveys the mixed liquid M from the mixing device 10 to the inner tank 31a of the substrate processing section 30 via the circulation path 15 and the first liquid conveying path 22 a. As shown in fig. 3, the controller 3 activates (becomes active) the stirring mechanism (e.g., bubbling mechanism, not shown in fig. 1) provided in the inner tank 31a from time T6.
Then, the liquid feeding process to the processing tank 31 is started, and when the liquid mixture M in the outer tank 31b increases, the liquid level of the liquid mixture M stored in the outer tank 31b reaches the predetermined third height or more at time T7. Thereby, an ON signal is output from the third liquid level sensor S3.
Next, at time T8 when a predetermined amount of mixed liquid M is supplied to processing bath 31, first pump 16 is stopped (deactivated), and first flow rate adjuster 23a is closed (deactivated). Thereby, the supply of the liquid mixture M to the treatment tank 31 is stopped, and the liquid feeding treatment is completed. Further, the control unit 3 turns the filter bypass to the active state at time T8.
Next, the control unit 3 starts the silicon solution addition process at time T8. First, the control unit 3 starts to operate (to be in an active state) the second pump 39 and the second heater 41 of the circulation path 32 from time T8.
By heating the mixed liquid M while circulating it through the circulation path 32 in this manner, the control unit 3 can adjust the temperature of the mixed liquid M and the phosphoric acid concentration in the treatment tank 31 to predetermined values.
Then, at time T9 when the temperature of the mixed solution M in the treatment tank 31 and the phosphoric acid concentration reach predetermined values (temperature concentration sensor: ON), the control unit 3 stops the stirring mechanism of the treatment tank 31 (becomes an inactive state). Thereby, the controller 3 stabilizes the liquid surface of the mixed liquid M stored in the inner tank 31 a.
Then, after a predetermined time has elapsed from time T9, the controller 3 operates (turns on) the treatment liquid discharger 34 at time T10 at which the liquid surface of the mixed liquid M stored in the inner tank 31a becomes stable. Thereby, the control unit 3 lowers the liquid level of the mixed liquid M stored in the outer tank 31 b.
Next, at a time T11 when the liquid level of the mixed liquid M stored in the outer tank 31b becomes lower than the predetermined third height and the OFF signal is output from the third liquid level sensor S3, the controller 3 stops the treatment liquid discharger 34 (enters the inactive state).
Here, since the liquid surface of the mixed liquid M in the outer tank 31b is substantially equal to the predetermined third height and the inner tank 31a is filled with the mixed liquid M, the controller 3 can weigh the mixed liquid M stored in the entire processing tank 31 to a predetermined value. Therefore, according to the embodiment, the amount of the mixed liquid M when the etching liquid E is generated can be adjusted with high accuracy.
Then, at time T11 when the mixed liquid M supplied to the treatment tank 31 reaches a predetermined amount, the controller 3 operates the silicon solution supply unit 25 (to be in an active state) and also operates the stirring mechanism of the treatment tank 31 (to be in an active state). Thereby, the controller 3 supplies the silicon solution to the inner tank 31a of the substrate processing section 30 through the silicon solution supply path 25 b.
Then, when the amount of the liquid in the outer tank 31b increases, the liquid surface of the mixed liquid M stored in the outer tank 31b reaches the predetermined third height or more at time T12. Thereby, an ON signal is output from the third liquid level sensor S3.
Then, the control unit 3 stops the silicon solution supply unit 25 (becomes an inactive state) for a time T13 when the predetermined amount of silicon solution is conveyed. Further, the controller 3 operates the stirring mechanism of the processing tank 31 until a time T14 after a lapse of a predetermined time from the time T13, thereby completing the addition processing of the silicon solution.
Through the processes described above, the controller 3 can prepare the etching solution E having a desired silicon concentration in the processing bath 31 when the mixed solution M is first supplied to the processing bath 31. Therefore, according to the embodiment, the selection ratio of etching the silicon nitride film with respect to the silicon oxide film can be increased from the start time of the etching process of the wafer W.
In the embodiment, the controller 3 supplies both the mixed solution M and the silicon solution to the inner tank 31a of the processing tank 31. Thus, in the embodiment, the mixture solution M and the silicon solution can be mixed and simultaneously overflow from the inner tank 31a to the outer tank 31b, and thus the mixing property of the mixture solution M and the silicon solution can be improved.
FIG. 4 is a timing chart showing a specific example of an operation pattern of each part of the substrate processing system 1 in various processes performed when the silicon concentration of the etching solution E in the processing bath 31 according to the embodiment is adjusted.
In fig. 4, preparation of the liquid mixture M to be transferred and liquid transfer processing are described when the etching processing of the wafer W is started in the processing bath 31 and silicon is already eluted from the wafer W into the etching liquid E.
First, the controller 3 starts the mixing process by activating the phosphoric acid aqueous solution supplier 11 (to be in an active state) at time T20 and supplying the phosphoric acid aqueous solution to the container 14.
At the time of the time T20, the deposition inhibitor supply unit 12, the silicon solution supply unit 25, the first pump 16, and the first heater 19 are not operated (inactive state). At time T20, the filter 18 is in a state of being bypassed by the bypass flow path 21 (the filter bypass is in an active state), and the back pressure valve 54 is in a fully open state.
At the time T20, the first flow rate regulator 23a and the second flow rate regulator 23b are in the closed state (inactive state), and nothing is stored in the tank 14, so that the first liquid level sensor S1 and the second liquid level sensor S2 output OFF signals.
Then, at time T21 when a predetermined amount of phosphoric acid aqueous solution is supplied to the container 14, the control unit 3 operates (turns on) the first pump 16 to form a circulating flow in the circulation path 15.
Subsequently, the liquid level of the phosphoric acid aqueous solution stored in the tank 14 gradually rises, and when the liquid level reaches the predetermined second height or more at time T22, an ON signal is output from the second liquid level sensor S2. Then, the control unit 3 starts the operation of the deposition inhibitor supply unit 12 (becomes an active state) at time T22, supplies the deposition inhibitor to the container 14, and stops the phosphoric acid aqueous solution supply unit 11 (becomes an inactive state).
Then, at time T23 when a predetermined amount of the deposition inhibitor is supplied to the vessel 14, the control unit 3 stops (becomes inactive) the deposition inhibitor supply unit 12, activates (becomes active) the phosphoric acid aqueous solution supply unit 11, and supplies the phosphoric acid aqueous solution to the vessel 14.
When the liquid level of the mixed liquid M becomes equal to or higher than the predetermined first height at time T24, an ON signal is output from the first liquid level sensor S1. Then, the control unit 3 determines that a predetermined amount of phosphoric acid aqueous solution has been supplied to the container 14, and stops the phosphoric acid aqueous solution supply unit 11 at time T24 (becomes an inactive state).
This completes the mixing process, and a mixed solution M in which phosphoric acid and the precipitation inhibitor have a predetermined concentration is generated in the mixing device 10.
Next, the control unit 3 starts the operation of the first heater 19 (becomes the active state) from time T24, and starts the heating process by heating the mixed liquid M circulating in the circulation path 15. The controller 3 heats the mixed liquid M stored in the container 14 by heating the mixed liquid M by the first heater 19. Then, the heating treatment is completed at time T25 when the temperature of the mixed liquid M reaches a predetermined temperature.
Next, the control unit 3 starts the filter bypass to the disabled state at time T25, and starts the filtering process. Thereby, contaminants such as particles contained in the mixed liquid M are removed. Then, at time T26 when contaminants such as particles contained in the mixed solution M are sufficiently removed, the filtration process is completed.
Next, the control unit 3 starts the liquid feeding process at time T26. Specifically, the control unit 3 sets the second flow rate regulator 23b to the open state (the active state) and sets the back pressure valve 54 to the throttle state from time T26. The first flow regulator 23a maintains the closed state. Although not shown in fig. 4, the control unit 3 changes the valve 20 of the circulation path 15 from the open state to the closed state at time T26.
Thus, the control unit 3 conveys the mixed liquid M from the mixing device 10 to the outer tank 31b of the substrate processing unit 30 via the circulation path 15 and the second liquid conveying path 22 b. Then, the liquid mixture M in the container 14 decreases, and the liquid level becomes lower than the predetermined first height at time T27. Thereby, an OFF signal is output from the first liquid level sensor S1.
Here, in the embodiment, the control unit 3 performs control to always maintain the silicon concentration in the processing bath 31 at a constant value or less based on the silicon concentration of the etchant E in the processing bath 31 obtained from the silicon concentration sensor 42.
For example, when the silicon concentration of the etching liquid E in the processing bath 31 is higher than a predetermined threshold value, the controller 3 opens the flow rate regulator 34b to discharge the etching liquid E having a high silicon concentration, and supplies the same amount of the mixed liquid M as the discharged etching liquid E.
In the embodiment, since the mixing treatment of the mixed solution M is already completed in the mixing device 10, the mixed solution M containing no silicon solution can be supplied to the treatment tank 31 as needed.
Thus, the controller 3 can reduce the silicon concentration of the etching liquid E in the processing bath 31 while keeping the storage amount of the etching liquid E in the processing bath 31 constant. Therefore, according to the embodiment, the silicon concentration in the processing bath 31 can be always kept at a constant value or less.
In the embodiment, the control unit 3 can supply the mixed solution M containing no silicon solution to the treatment tank 31. As a result, when the silicon concentration of the etching liquid E becomes too high due to elution of silicon from the silicon nitride film in the wafer W, the silicon concentration of the etching liquid E can be quickly suppressed to a predetermined concentration.
In the embodiment, the etching liquid E is generated by supplying the silicon solution to the generated mixed liquid M alone, so that the silicon concentration of the mixed liquid M supplied to the substrate processing portion 30 can be adjusted in a wide range.
That is, when the mixed solution M needs a predetermined silicon concentration (for example, at the time of the first liquid feeding), the mixed solution M containing the silicon solution can be supplied to the treatment tank 31 by operating the silicon solution supply unit 25.
On the other hand, when the mixed solution M does not need a predetermined silicon concentration (for example, when the silicon concentration is adjusted), the mixed solution M containing no silicon solution can be supplied to the treatment tank 31 by not operating the silicon solution supply unit 25.
In the embodiment, when the silicon concentration of the etching liquid E is adjusted, the adjustment process is performed while the phosphoric acid concentration of the mixed liquid M being conveyed is detected by the phosphoric acid concentration sensor 52 of the circulation path 15. That is, in the embodiment, the feed amount of the mixed liquid M is feedback-controlled by the phosphoric acid concentration sensor 52.
This makes it possible to stabilize the phosphoric acid concentration of the etching liquid E, and thus to more appropriately perform the etching process of the wafer W using the etching liquid E.
In the embodiment, the mixed liquid M after the heat treatment in the mixing device 10 may be supplied to the treatment tank 31. This can prevent the temperature of the etching liquid E from decreasing in the processing bath 31 to which the mixed liquid M is supplied.
Thus, according to the embodiment, stable etching can be performed in the processing bath 31.
In the embodiment, when the supply of the mixed liquid M is not necessary in the treatment tank 31, the control unit 3 may return the mixed liquid M flowing through the second liquid feeding path 22b from the second return path 24b to the container 14.
That is, when the supply of the mixed liquid M is not necessary in the treatment tank 31, the control unit 3 may change the valve 58 to the closed state and the valve 59 to the open state to circulate the mixed liquid M by using the circulation path 15, the second liquid-feeding path 22b, and the second return path 24 b.
This makes it possible to completely cope with a state in which the mixed liquid M is discharged from the second liquid feeding path 22b to the outer tank 31b (i.e., a state in which the mixed liquid M needs to be supplied) and a state in which the mixed liquid M is not discharged from the second liquid feeding path 22b to the outer tank 31b (i.e., a state in which the mixed liquid M does not need to be supplied).
Therefore, according to the embodiment, since the mixed liquid M can be outputted with higher accuracy, the treatment for keeping the silicon concentration in the treatment tank 31 at a constant value or less can be performed with higher accuracy.
In the embodiment, the mixed liquid M flowing through the second liquid feeding path 22b may be returned from the first return path 24a to the container 14 in addition to the second return path 24 b.
This can increase the flow rate of the mixed liquid M flowing through the second liquid feeding path 22b, and thus can ensure the minimum required flow rate of the mixed liquid M when the mixed liquid M is heated by the first heater 19. Thus, according to the embodiment, the mixed liquid M can be stably heated.
In the embodiment, the control unit 3 may set the back pressure valve 54 to the throttle state during the liquid feeding process of the liquid mixture M. Thus, the controller 3 can increase the pressure of the branch portion 22b1 in the second liquid feeding path 22b, and thus can secure a pressure necessary for returning the mixed liquid M from the branch portion 22b1 to the container 14 via the second liquid feeding path 22b and the second return path 24 b.
In the embodiment, when the flow rate of the mixed liquid M discharged from the second liquid feeding path 22b to the outer tank 31b is adjusted, coarse adjustment of the flow rate is performed using the throttle valve 57, and fine adjustment of the flow rate is performed using the flow meter 55 and the constant pressure valve 56.
In the embodiment, the pressure of the mixed liquid M in the flow meter 55 is feedback-controlled by the constant pressure valve 56, whereby the flow rate of the mixed liquid M in the flow meter 55 can be kept constant. This enables the mixed liquid M to be output in a more accurate amount, and therefore, the treatment for keeping the silicon concentration in the treatment tank 31 at a constant value or less can be performed more accurately.
In the embodiment, the controller 3 may supply the mixed liquid M to the outer tank 31b instead of the inner tank 31a when adjusting the silicon concentration of the etching liquid E. This can suppress a sudden change in the silicon concentration of the etching liquid E in the inner tank 31a, as compared with the case where the mixed liquid M is directly supplied to the inner tank 31a in which the wafer W is being processed.
Thus, according to the embodiment, the etching process of the wafer W can be performed more stably.
In the embodiment, the liquid feeding path 22 (the first liquid feeding path 22a and the second liquid feeding path 22b) is provided so as to be branched from the circulation path 15. This enables the mixed liquid M to be fed to the treatment tank 31 by the first pump 16 used for the mixing treatment and the heating treatment.
That is, in the embodiment, since it is not necessary to separately provide a pump in the liquid feeding path 22 in order to perform the liquid feeding process of the mixed liquid M, the mixed liquid M can be fed at low cost.
< details of exhaust part >
Next, the structure and operation of the exhaust unit 60 provided in the mixing device 10 according to the embodiment will be described in detail with reference to fig. 5 and 6. Fig. 5 is a schematic block diagram showing the configuration of the exhaust unit 60 of the substrate processing system 1 according to the embodiment.
As shown in fig. 5, the exhaust section 60 of the embodiment includes an exhaust fan 61, an exhaust passage 62, a mist trap 63, an air supply line 64, an air supply fan 65, and gas concentration meters 66, 67.
The exhaust fan 61 exhausts the gas in the mixing device 10. The exhaust fan 61 is disposed adjacent to the container 14 (see fig. 1) of the mixing device 10, for example, and discharges the gas in the mixing device 10 including the steam and the like evaporated from the container 14 to the exhaust duct 62. The control unit 3 (see fig. 1) can control the rotation speed of the exhaust fan 61 to a desired value.
The exhaust passage 62 directs the gas exhausted from the mixing device 10. The exhaust passage 62 is disposed, for example, between the mixing device 10 and an exhaust facility (hereinafter also referred to as "plant infrastructure") provided in a plant in which the substrate processing system 1 is provided, and guides the gas exhausted from the mixing device 10 to the plant infrastructure.
Further, an exhaust facility (plant infrastructure facility) of the plant is controlled to a negative pressure lower than the atmospheric pressure. Therefore, the inside of the mixing device 10 connected to the plant infrastructure is also controlled to be negative pressure, and even when the exhaust fan 61 is not operated, the gas in the mixing device 10 is sucked by the plant infrastructure.
The mist trap 63 removes mist contained in the gas discharged from the mixing device 10 and flowing through the exhaust passage 62. The mist trap 63 is disposed on the plant infrastructure side of the exhaust passage 62, for example.
The gas supply line 64 is connected to the gas discharge passage 62, and supplies a dilution gas for diluting the combustible gas in the gas discharge passage 62. The gas supply line 64 is connected, for example, between the exhaust passage 62 and the periphery of the substrate processing system 1. Then, the gas supply line 64 supplies the ambient gas around the substrate processing system 1, which does not contain combustible gas, as a dilution gas to the exhaust passage 62.
The dilution gas supplied from the gas supply line 64 is not limited to the ambient gas around the substrate processing system 1, and may be, for example, an inert gas or air supplied from a plant power plant.
The air supply fan 65 is used to adjust the supply amount of the diluent gas supplied from the air supply line 64 to the exhaust passage 62. The gas supply fan 65 is disposed, for example, on the upstream side of the gas supply line 64, and supplies the ambient gas around the substrate processing system 1 to the exhaust passage 62. The control unit 3 can control the rotation speed of the air supply fan 65 to a desired value.
The gas concentration meter 66 is provided in the exhaust passage 62, and measures the combustible gas concentration of the gas flowing in the exhaust passage 62. The gas concentration meter 67 is provided in the mixing device 10, and measures the combustible gas concentration of the gas in the mixing device 10.
Fig. 6 is a timing chart showing a specific example of an operation pattern of each part of the exhaust unit 60 in various processes performed when the mixed liquid M is transported in the mixing device 10 according to the embodiment. Fig. 6 illustrates details of the exhaust gas treatment performed by the exhaust unit 60 when the mixed liquid M is prepared in the mixing device 10 and is transferred to the treatment tank 31.
As described above, the control unit 3 (see fig. 1) performs the mixing process of mixing the phosphoric acid aqueous solution and the precipitation inhibitor to generate the mixed solution M (see fig. 1) in the mixing device 10 (see fig. 1) from the time T0 to the time T4.
In this mixing treatment, since the temperature of the mixed liquid M is room temperature, the organic solvent contained in the precipitation inhibitor in the mixed liquid M hardly evaporates. Therefore, as shown in fig. 6, the combustible gas concentration of the gas flowing in the exhaust passage 62 is a very low concentration C0.
Here, when the combustible gas concentration in the exhaust passage 62 is the concentration C0, the control unit 3 may not need to actively operate the exhaust unit 60 to discharge the combustible gas from the mixing device 10.
Then, when the combustible gas concentration in the exhaust passage 62 is C0, the control unit 3 controls the rotation speed of the exhaust fan 61 to the lowest rotation speed R0 and controls the rotation speed of the air supply fan 65 to the lowest rotation speed R3.
Thus, it is possible to suppress an excessive load from being applied to the plant infrastructure without actively operating the exhaust unit 60.
After the mixing process, the control unit 3 performs a heating process for heating the mixed liquid M in the mixing device 10 from time T4. In this heating treatment, the mixed liquid M is heated, and therefore the organic solvent contained in the precipitation inhibitor in the mixed liquid M evaporates.
Therefore, the combustible gas concentration of the gas in the mixing device 10 gradually rises, so the combustible gas concentration of the gas flowing in the exhaust passage 62 gradually rises from the concentration C0.
Here, when the combustible gas concentration in the exhaust passage 62 becomes higher than the concentration C0, the control unit 3 assumes that the organic solvent remains in the mixed liquid M produced by the mixing device 10.
When it is considered that the organic solvent remains in the mixed liquid M produced by the mixing device 10, the control unit 3 increases the rotation speed of the exhaust fan 61 from the rotation speed R0 based on the combustible gas concentration (not shown) in the mixing device 10 measured by the gas concentration meter 67. For example, the control unit 3 increases the rotation speed of the exhaust fan 61 as the combustible gas concentration in the mixing device 10 increases.
This can promote evaporation of the organic solvent remaining in the mixed liquid M in the container 14 (see fig. 1).
When the combustible gas concentration in the exhaust passage 62 becomes higher than the concentration C0, the control unit 3 increases the rotation speed of the air supply fan 65 from the rotation speed R3 in accordance with the combustible gas concentration in the exhaust passage 62. For example, the control unit 3 increases the rotation speed of the air supply fan 65 as the combustible gas concentration in the exhaust passage 62 becomes higher.
This increases the amount of diluent gas supplied into the exhaust passage 62, and therefore the combustible gas concentration in the exhaust passage 62 can be suppressed from becoming higher than the given threshold concentration Cth.
The threshold concentration Cth is a value Lower than the Lower Explosion Limit (LEL) of the combustible gas, for example, a value Lower than 25% LEL.
Next, at time T4a when the temperature of the mixed liquid M reaches the predetermined temperature, the evaporation amount of the organic solvent evaporated from the mixed liquid M becomes substantially constant. Therefore, at this time T4a, control unit 3 sets the rotation speed of exhaust fan 61 to a given rotation speed R2 greater than rotation speed R0, and sets the rotation speed of air supply fan 65 to a given rotation speed R5 greater than rotation speed R3.
Thus, the amount of combustible gas generated from the mixed liquid M and the amount of diluent gas supplied from the gas supply line 64 become constant, and therefore the combustible gas concentration in the exhaust passage 62 is maintained at the threshold concentration Cth during the period from time T4a to time T4b during which the organic solvent continues to evaporate.
In other words, when the temperature of the mixed liquid M is a predetermined temperature, the control unit 3 adjusts the amount of the combustible gas supplied (discharged) from the mixing device 10 to the exhaust duct 62 by the exhaust fan 61 so that the combustible gas concentration in the exhaust duct 62 becomes the threshold concentration Cth.
When the temperature of the mixed liquid M is a predetermined temperature, the control unit 3 adjusts the amount of the diluent gas supplied from the supply line 64 to the exhaust passage 62 by the supply fan 65 so that the combustible gas concentration in the exhaust passage 62 becomes the threshold concentration Cth.
That is, in the embodiment, by providing the exhaust fan 61 in the exhaust portion 60, the amount of the flammable gas discharged from the mixing device 10 into the exhaust duct 62 can be adjusted by the exhaust fan 61 so that the flammable gas concentration in the exhaust duct 62 becomes equal to or lower than the threshold concentration Cth.
Thus, with the embodiment, the combustible gas concentration in the gas discharged from the mixing device 10 and flowing in the exhaust passage 62 can be reduced.
In addition, in the embodiment, by providing the supply air line 64 and the supply air fan 65 in the exhaust portion 60, the combustible gas discharged from the mixing device 10 to the exhaust passage 62 can be diluted with the diluent gas.
Thus, with the embodiment, the combustible gas concentration in the gas discharged from the mixing device 10 and flowing in the exhaust passage 62 can be further reduced.
In addition, during the period from time T4a to time T4b, the evaporation amount of the organic solvent is supposed to increase suddenly, and the combustible gas concentration in the exhaust passage 62 becomes higher than the threshold concentration Cth. In this case, the control unit 3 makes the rotation speed of the exhaust fan 61 smaller than the rotation speed R2 and makes the rotation speed of the intake fan 65 larger than the rotation speed R5.
This can reduce the supply amount of the combustible gas to the exhaust passage 62 and increase the supply amount of the diluent gas, so that the combustible gas concentration in the exhaust passage 62 can be returned to the threshold concentration Cth or less.
That is, in the embodiment, the control portion 3 adjusts the amount of the combustible gas supplied to the exhaust passage 62 by the exhaust fan 61 and adjusts the amount of the diluent gas supplied to the exhaust passage 62 by the supply fan 65 so that the combustible gas concentration in the exhaust passage 62 becomes equal to or less than the threshold concentration Cth.
This prevents explosion and the like from occurring in the exhaust passage 62 due to the combustible gas discharged from the mixing device 10.
Next, at time T4b when all of the organic solvent evaporates from the mixed liquid M, the combustible gas concentration of the gas flowing through the exhaust passage 62 gradually decreases from the threshold concentration Cth.
Here, when the combustible gas concentration in the exhaust passage 62 gradually decreases from the threshold concentration Cth, the control unit 3 assumes that the organic solvent does not remain in the mixed liquid M generated by the mixing device 10.
When it is considered that the organic solvent is not remaining in the mixed liquid M produced by the mixing device 10, the control unit 3 decreases the rotation speed of the exhaust fan 61 from the rotation speed R2 based on the combustible gas concentration in the mixing device 10 measured by the gas concentration meter 67. For example, the control unit 3 decreases the rotation speed of the exhaust fan 61 as the combustible gas concentration in the mixing device 10 becomes lower.
When the combustible gas concentration in the exhaust passage 62 gradually decreases from the threshold concentration Cth, the control unit 3 decreases the rotation speed of the air supply fan 65 from the rotation speed R5 according to the combustible gas concentration in the exhaust passage 62. For example, the control portion 3 reduces the rotation speed of the air supply fan 65 as the combustible gas concentration in the exhaust passage 62 becomes lower.
Accordingly, when all the organic solvent evaporates from the mixed liquid M and it is not necessary to operate the exhaust unit 60 at the maximum output, it is possible to suppress an excessive load from being applied to the plant infrastructure.
In the embodiment, as described above, the control unit 3 may determine whether or not the organic solvent remains in the mixed liquid M in the mixing device 10 based on the combustible gas concentration in the exhaust passage 62 measured by the gas concentration meter 66.
Accordingly, it is possible to determine whether or not the organic solvent remains in the mixed liquid M in the mixing device 10 without separately providing a sensor for detecting the presence or absence of the organic solvent in the container 14 of the mixing device 10, and thus it is possible to reduce the cost of the substrate processing system 1.
Then, at time T5 when the combustible gas concentration in the exhaust passage 62 is restored to the lowest level concentration C0, the heating process of the mixing device 10 is completed.
After the heating process, the control unit 3 starts the liquid feeding process of feeding the liquid mixture M to the processing bath 31 at time T5. In the liquid feeding process, the inside of the mixing apparatus 10 may be maintained at a predetermined negative pressure (e.g., -90Pa) in order to keep the temperature and concentration of the mixed liquid M in the container 14 constant.
For this reason, in the embodiment, in order to maintain a given negative pressure in the mixing device 10, the control section 3 maintains the rotation speed of the exhaust fan 61 at a given rotation speed R1, and maintains the rotation speed of the supply air fan 65 at a given rotation speed R4.
The rotation speed R1 is greater than the rotation speed R0 and less than the rotation speed R2. The rotation speed R4 is greater than the rotation speed R3 and less than the rotation speed R5.
In other words, the control section 3 adjusts the amount of gas discharged from the mixing device 10 to the exhaust passage 62 by the exhaust fan 61, and adjusts the amount of gas supplied from the gas supply line 64 to the exhaust passage 62 by the gas supply fan 65 so that the pressure inside the mixing device 10 at the time of the liquid feeding process is a given negative pressure.
This makes it possible to keep the temperature and concentration of the liquid mixture M fed during the liquid feeding process constant, and thus to stably perform the liquid processing in the substrate processing system 1.
Then, at time T8, the supply of the liquid mixture M to the processing bath 31 is stopped, and the liquid feeding process is completed. After time T8, the mixing process is restarted in the mixing device 10.
As described above, since the combustible gas concentration in the exhaust passage 62 is the concentration C0 in the mixing process, the control portion 3 controls the rotation speed of the exhaust fan 61 to the rotation speed R0 and controls the rotation speed of the air supply fan 65 to the rotation speed R3.
In the embodiment, the example in which the rotation speed of the exhaust fan 61 is increased according to the combustible gas concentration in the mixing device 10 when the temperature of the mixed liquid M is increased by the heating treatment is shown, but the present disclosure is not limited to this example.
For example, in the embodiment, when the temperature of the mixed liquid M is raised by the heating treatment, the rotation speed of the exhaust fan 61 may be increased in accordance with the temperature of the mixed liquid M. This also promotes evaporation of the organic solvent remaining in the mixed liquid M in the container 14.
In the embodiment, when the temperature of the mixed liquid M is room temperature during the mixing process or the like, the rotation speed of the exhaust fan 61 may be maintained at the lowest rotation speed R0. Thus, it is possible to suppress an excessive load from being applied to the plant infrastructure without actively operating the exhaust unit 60.
< modification example >
Next, various modifications of the substrate processing system 1 according to the embodiment will be described with reference to fig. 7 to 11. Fig. 7 is a schematic block diagram showing the configuration of a substrate processing system 1 according to a modification of the embodiment. In the following various modifications, the same portions as those of the embodiment are denoted by the same reference numerals, and redundant description thereof is omitted.
As shown in fig. 7, in the substrate processing system 1 of the modified example, a plurality of mixing devices 10 (see fig. 1) are provided for a plurality of processing tanks 31 (see fig. 1).
In the example of fig. 7, 3 mixing devices 10A to 10C are provided for 3 processing tanks 31A to 31C. In the following description, the plurality of mixing devices 10A to 10C are collectively referred to as "mixing device 10", and the plurality of treatment tanks 31A to 31C are collectively referred to as "treatment tank 31".
Liquid feed paths 22A branched into 3 paths are connected between the mixing device 10A and the treatment tanks 31A to 31C, respectively, and the mixed liquid M is fed from the mixing device 10A to the treatment tanks 31A to 31C via the liquid feed paths 22A.
The mixed liquid M can be returned to the container 14 of the mixing device 10A (see fig. 1) via the return paths 24A connected to the liquid feeding paths 22A branched into 3 paths, respectively.
Liquid feed paths 22B branched into 3 paths are connected between the mixing device 10B and the treatment tanks 31A to 31C, respectively, and the mixed liquid M is fed from the mixing device 10B to the treatment tanks 31A to 31C via the liquid feed paths 22B.
Further, the mixed liquid M can be returned to the container 14 of the mixing device 10B via the return paths 24B connected to the liquid feeding paths 22B branched into 3 paths, respectively.
Liquid feed paths 22C branched into 3 paths are connected between the mixing device 10C and the treatment tanks 31A to 31C, respectively, and the mixed liquid M is fed from the mixing device 10C to the treatment tanks 31A to 31C individually via the liquid feed paths 22C.
The mixed liquid M can be returned to the container 14 of the mixing device 10C via the return paths 24C connected to the liquid feeding paths 22C branched into 3 paths, respectively.
In the modification, the liquid feeding paths 22A to 22C each have the first liquid feeding path 22A and the second liquid feeding path 22b shown in fig. 1, and the return paths 24A to 24C each have the first return path 24A and the second return path 24b shown in fig. 1.
The processing tanks 31A to 31C are connected to the silicon solution supply unit 25, respectively, and the silicon solution is supplied to the processing tanks 31A to 31C individually through the silicon solution supply unit 25.
Further, in the phosphoric acid aqueous solution supply part 11 that supplies the phosphoric acid aqueous solution to the mixing devices 10A to 10C, a buffer container 11d is provided on the downstream side of the phosphoric acid aqueous solution supply source 11 a. In the modification, the buffer container 11d is provided, so that the phosphoric acid aqueous solution used in the plurality of mixing devices 10A to 10C can be sufficiently supplied in a necessary amount at a necessary timing.
In the modification, when the phosphoric acid aqueous solution supply unit 11 has a sufficient phosphoric acid aqueous solution supply capacity, the buffer tank 11d may not be provided in the phosphoric acid aqueous solution supply unit 11.
Fig. 8 is a diagram showing a specific example of the process flow of each part of the substrate processing system 1 according to the modified example of the embodiment.
As shown in fig. 8, the control unit 3 (see fig. 1) first performs the mixing process, the heating process, and the filtering process (not shown in fig. 8) shown in fig. 2 in the mixing device 10A in this order. Thereby, the control unit 3 prepares the mixed liquid M in the mixing device 10A.
Subsequently, the controller 3 transfers the prepared mixed solution M from the mixing device 10A to the treatment tank 31A. When the liquid feeding process of the mixed liquid M from the mixing device 10A is completed, the controller 3 supplies the silicon solution from the silicon solution supply unit 25 to the processing bath 31A, and performs the silicon solution addition process shown in fig. 3.
Through the various processes described so far, the etching solution E having a desired silicon concentration is prepared in the processing bath 31A.
In parallel with the various processes of the mixing device 10A and the silicon solution supply unit 25, the control unit 3 sequentially performs the mixing process, the heating process, and the filtering process (not shown in fig. 8) shown in fig. 2 in the mixing device 10B. Thereby, the control unit 3 prepares the mixed liquid M in the mixing device 10B.
Next, the control unit 3 conveys the prepared mixed liquid M from the mixing device 10B to the treatment tank 31B. When the liquid feeding process of the mixed liquid M from the mixing device 10B is completed, the controller 3 supplies the silicon solution from the silicon solution supply unit 25 to the processing tank 31B, and performs the silicon solution addition process shown in fig. 3.
Through the various processes described so far, the etching solution E having a desired silicon concentration is prepared in the processing bath 31B.
In parallel with the various processes of the mixing devices 10A and 10B and the silicon solution supply unit 25, the control unit 3 sequentially performs the mixing process, the heating process, and the filtering process (not shown in fig. 8) shown in fig. 2 in the mixing device 10C. Thereby, the control unit 3 prepares the mixed liquid M in the mixing device 10C.
Next, the control unit 3 conveys the prepared mixed liquid M from the mixing device 10C to the treatment tank 31C. When the liquid feeding treatment of the mixed liquid M from the mixing device 10C is completed, the controller 3 supplies the silicon solution from the silicon solution supply unit 25 to the treatment tank 31C, and performs the silicon solution addition treatment shown in fig. 3.
Through the various processes described so far, the etching solution E having a desired silicon concentration is prepared in the processing bath 31C.
In parallel with the various processes of the mixing devices 10B and 10C and the silicon solution supply unit 25, the control unit 3 sequentially performs a mixing process, a heating process, and a filtering process (not shown) shown in fig. 4 in the mixing device 10A in which the liquid feeding process has once been completed. Thereby, the control unit 3 prepares the mixed liquid M in the mixing device 10A.
Next, the control unit 3 sequentially immerses the wafer W in the processing tanks 31A to 31C, and performs etching processing on the wafer W. In the etching process, the control unit 3 transfers the mixed liquid M from the mixing device 10A to perform the ELC process in the processing tanks 31A to 31C.
In parallel with the various processes of the mixing devices 10A and 10C and the silicon solution supply unit 25, the control unit 3 performs the mixing process, the heating process, and the filtering process (not shown) shown in fig. 4 in the mixing device 10B in which the liquid feeding process has been completed once. Thereby, the control unit 3 prepares the mixed liquid M in the mixing device 10B.
Then, when the mixed liquid M in the mixing device 10A is used up and the liquid feeding process of the mixing device 10A is completed, the control unit 3 continues the ELC process in the processing tanks 31A to 31C by feeding the mixed liquid M from the mixing device 10B.
In parallel with the various processes of the mixing devices 10A and 10B, the control unit 3 performs the mixing process, the heating process, and the filtering process (not shown) shown in fig. 4 in the mixing device 10C in which the liquid feeding process has been completed once. Thereby, the control unit 3 prepares the mixed liquid M in the mixing device 10C.
Then, when the mixed liquid M in the mixing device 10B is used up and the liquid feeding process of the mixing device 10B is completed, the control unit 3 continues the ELC process in the processing tanks 31A to 31C by feeding the mixed liquid M from the mixing device 10C.
In parallel with the various processes of the mixing devices 10B and 10C, the control unit 3 performs the mixing process, the heating process, and the filtering process (not shown) shown in fig. 4 in the mixing device 10A in which the liquid feeding process has been completed once. Thereby, the control unit 3 prepares the mixed liquid M in the mixing device 10A.
Then, when the mixed liquid M in the mixing device 10C is used up and the liquid feeding process of the mixing device 10C is completed, the control unit 3 continues the ELC process in the processing tanks 31A to 31C by feeding the mixed liquid M from the mixing device 10A.
As described above, in the modification, the mixed liquid M is sequentially transferred from 1 of the plurality of mixing apparatuses 10 to the plurality of processing tanks 31 to be subjected to the etching process, and the mixed liquid M is prepared in the remaining mixing apparatuses 10.
This allows the ELC process to be continuously performed in the plurality of processing chambers 31A to 31C. Therefore, according to the modification, the etching of the wafer W by the etching liquid E can be more appropriately performed in the plurality of processing chambers 31A to 31C.
In the modification, the etching process for the wafer W can be performed in parallel in the plurality of processing chambers 31A to 31C. Therefore, according to the modification, the etching of the wafer W by the etching liquid E can be efficiently performed.
In the modification, 3 mixing devices 10 are provided for 3 processing tanks 31, but the number of processing tanks 31 is not limited to 3, and the number of mixing devices 10 is not limited to 3.
Fig. 9 is a schematic block diagram showing the configuration of the exhaust unit 60 of the substrate processing system 1 according to the modified example of the embodiment. As shown in fig. 9, the exhaust unit 60 of the modification includes exhaust fans 61A to 61C, an exhaust passage 62, a mist trap 63, an air supply line 64, an air supply fan 65, and gas concentration meters 66, 67A to 67C.
The exhaust fan 61A exhausts the gas in the mixing device 10A. The exhaust fan 61A is disposed adjacent to the container 14 (see fig. 1) of the mixing device 10A, for example, and discharges the gas in the mixing device 10A including the steam and the like evaporated from the container 14 to the exhaust duct 62.
The exhaust fan 61B exhausts the gas in the mixing device 10B. The exhaust fan 61B is disposed adjacent to the container 14 of the mixing device 10B, for example, and discharges the gas in the mixing device 10B including the steam and the like evaporated from the container 14 to the exhaust duct 62.
The exhaust fan 61C exhausts the gas in the mixing device 10C. The exhaust fan 61C is disposed adjacent to the container 14 of the mixing device 10C, for example, and discharges the gas in the mixing device 10C including the steam and the like evaporated from the container 14 to the exhaust duct 62.
The exhaust passage 62 guides the gas discharged from the mixing devices 10A to 10C. The exhaust passage 62 is disposed between the mixing devices 10A to 10C and a plant infrastructure in which the substrate processing system 1 is installed, for example, and guides the gas exhausted from the mixing devices 10A to 10C to the plant infrastructure.
Further, an exhaust facility (plant infrastructure facility) of the plant is controlled to a negative pressure lower than the atmospheric pressure. Therefore, the interiors of the mixing devices 10A to 10C connected to the plant infrastructure are also controlled to be at a negative pressure, and even when the exhaust fans 61A to 61C are not operated, the gas in the mixing devices 10A to 10C is sucked by the plant infrastructure.
The mist trap 63 removes mist included in the gas discharged from the mixing devices 10A to 10C and flowing through the exhaust passage 62. The mist trap 63 is disposed on the plant infrastructure side of the exhaust passage 62, for example.
The gas supply line 64 is connected to the gas discharge passage 62, and supplies a dilution gas for diluting the combustible gas in the gas discharge passage 62. The gas supply line 64 is connected, for example, between the exhaust passage 62 and the periphery of the substrate processing system 1. Then, the gas supply line 64 supplies the ambient gas around the substrate processing system 1, which does not contain combustible gas, as a dilution gas to the exhaust passage 62.
The supply air fan 65 is used to adjust the supply amount of the diluent gas supplied from the supply air line 64 to the exhaust passage 62. The gas supply fan 65 is disposed, for example, on the upstream side of the gas supply line 64, and supplies the ambient gas around the substrate processing system 1 to the exhaust passage 62.
The gas concentration meter 66 is provided in the exhaust passage 62, and measures the combustible gas concentration of the gas flowing in the exhaust passage 62. The gas concentration meters 67A to 67C are provided in the mixing devices 10A to 10C, respectively, and measure the combustible gas concentration of the gas in the mixing devices 10A to 10C.
Fig. 10 is a timing chart showing a specific example of an operation pattern of each part of the exhaust unit 60 in various processes performed when the mixed liquid M is first conveyed in the mixing devices 10A to 10C according to the modification of the embodiment.
The controller 3 performs a mixing process of mixing the phosphoric acid aqueous solution and the precipitation inhibitor to generate the mixed solution M in the mixing devices 10A to 10C from time T30 to time T31.
In this mixing treatment, since the temperature of the mixed liquid M is room temperature, the organic solvent contained in the precipitation inhibitor in the mixed liquid M hardly evaporates. Therefore, as shown in fig. 10, the combustible gas concentration of the gas flowing in the exhaust passage 62 is a very low concentration C0.
Here, when the combustible gas concentration in the exhaust passage 62 is the concentration C0, the control unit 3 may not need to actively operate the exhaust unit 60 to discharge the combustible gas from the mixing devices 10A to 10C.
Then, when the combustible gas concentration in the exhaust passage 62 is C0, the control unit 3 controls the rotation speed of the exhaust fan 61A to the lowest rotation speed R10 and controls the rotation speed of the exhaust fan 61B to the lowest rotation speed R13.
When the combustible gas concentration in the exhaust passage 62 is C0, the controller 3 controls the rotation speed of the exhaust fan 61C to the lowest rotation speed R16 and the rotation speed of the air supply fan 65 to the lowest rotation speed R19.
Thus, it is possible to suppress an excessive load from being applied to the plant infrastructure without actively operating the exhaust unit 60.
After the mixing process, the controller 3 starts the heating process of heating the mixed liquid M from time T31 in the mixing devices 10A to 10C. In this heating treatment, the mixed liquid M is heated, and therefore the organic solvent contained in the precipitation inhibitor in the mixed liquid M evaporates.
Therefore, the combustible gas concentration of the gas in the mixing devices 10A to 10C gradually rises, and therefore the combustible gas concentration of the gas flowing through the exhaust passage 62 gradually rises from the concentration C0.
Here, when the combustible gas concentration in the exhaust passage 62 becomes higher than the concentration C0, the control unit 3 assumes that the organic solvent remains in the mixed liquid M produced by at least one of the mixing devices 10A to 10C.
When it is considered that the organic solvent remains in the mixed liquid M produced by the mixing devices 10A to 10C, the control unit 3 increases the rotation speed of the exhaust fans 61A to 61C based on the combustible gas concentration in the mixing devices 10A to 10C measured by the gas concentration meters 67A to 67C.
In the example of fig. 10, since the organic solvent remains in the mixed liquid M of all the mixing devices 10A to 10C, the control unit 3 increases the rotation speed of the exhaust fans 61A to 61C as the combustible gas concentration in the mixing devices 10A to 10C becomes higher. This can promote evaporation of the organic solvent remaining in the mixed liquid M in the container 14 (see fig. 1).
When the combustible gas concentration in the exhaust passage 62 becomes higher than the concentration C0, the control unit 3 increases the rotation speed of the air supply fan 65 from the rotation speed R19 in accordance with the combustible gas concentration in the exhaust passage 62. For example, the control unit 3 increases the rotation speed of the air supply fan 65 as the combustible gas concentration in the exhaust passage 62 becomes higher.
This increases the amount of the diluent gas supplied into the exhaust passage 62, and therefore the combustible gas concentration in the exhaust passage 62 can be suppressed from becoming a value higher than the predetermined threshold concentration Cth.
Next, at time T32 when the temperature of the mixed liquid M in the mixing devices 10A to 10C reaches the predetermined temperature, the evaporation amount of the organic solvent evaporated from the mixed liquid M in the mixing devices 10A to 10C becomes substantially constant.
Therefore, at this time T32, control unit 3 sets the rotation speed of exhaust fan 61A to a given rotation speed R12 greater than rotation speed R10, and sets the rotation speed of exhaust fan 61B to a given rotation speed R15 greater than rotation speed R13.
At this time T32, control unit 3 sets the rotation speed of exhaust fan 61C to a predetermined rotation speed R18 greater than rotation speed R16, and sets the rotation speed of air supply fan 65 to a predetermined rotation speed R21 greater than rotation speed R19.
Thus, the amount of combustible gas generated from the mixed liquid M and the amount of diluent gas supplied from the gas supply line 64 become constant, and therefore the combustible gas concentration in the exhaust passage 62 is maintained at the threshold concentration Cth during the period from time T32 to time T33, at which the organic solvent continues to evaporate.
That is, in the modification, as in the embodiment, the amount of the combustible gas discharged from the mixing devices 10A to 10C to the exhaust duct 62 can be adjusted by the exhaust fans 61A to 61C so that the combustible gas concentration in the exhaust duct 62 becomes equal to or less than the threshold concentration Cth.
Therefore, according to the modification, the combustible gas concentration in the gas discharged from the mixing devices 10A to 10C and flowing through the exhaust passage 62 can be reduced.
In the modification, as in the embodiment, the supply line 64 and the supply fan 65 are provided in the exhaust unit 60, whereby the combustible gas discharged from the mixing devices 10A to 10C to the exhaust passage 62 can be diluted with the diluent gas.
Therefore, according to the modification, the combustible gas concentration in the gas discharged from the mixing devices 10A to 10C and flowing through the exhaust passage 62 can be further reduced.
In the modification, since the organic solvent is evaporated from the 3 mixing devices 10A to 10C at the same time, the rotation speeds R12, R15, and R18 in the heating process are lower than the rotation speed R2 in the heating process of the embodiment.
In addition, during the period from time T32 to time T33, the evaporation amount of the organic solvent is assumed to increase suddenly, and the combustible gas concentration in the exhaust passage 62 becomes higher than the threshold concentration Cth. In this case, the controller 3 sets the rotation speeds of the exhaust fans 61A to 61C corresponding to the gas concentration meters 67A to 67C having a high combustible gas concentration to be lower than the rotation speeds R12, R15, and R18, and sets the rotation speed of the air supply fan 65 to be higher than the rotation speed R2.
This can reduce the supply amount of the combustible gas to the exhaust passage 62 and increase the supply amount of the diluent gas, so that the combustible gas concentration in the exhaust passage 62 can be returned to the threshold concentration Cth or less.
That is, in the modification, the amount of the combustible gas supplied to the exhaust passage 62 is adjusted by the exhaust fans 61A to 61C, and the amount of the diluent gas supplied to the exhaust passage 62 is adjusted by the air supply fan 65 so that the combustible gas concentration in the exhaust passage 62 becomes equal to or lower than the threshold concentration Cth.
This can stably reduce the concentration of combustible gas in the gas discharged from the mixing devices 10A to 10C and flowing through the exhaust passage 62.
Next, at time T33 when all of the organic solvent evaporates from the mixed liquid M, the combustible gas concentration of the gas flowing through the exhaust passage 62 gradually decreases from the threshold concentration Cth.
Here, when the combustible gas concentration in the exhaust passage 62 gradually decreases from the threshold concentration Cth, the control unit 3 assumes that the organic solvent does not remain in the mixed liquid M generated by the mixing devices 10A to 10C.
When it is considered that the organic solvent is not remaining in the mixed liquid M produced by the mixing devices 10A to 10C, the control unit 3 decreases the rotation speed of the exhaust fan 61A from the rotation speed R12 based on the combustible gas concentration (not shown) in the mixing device 10A measured by the gas concentration meter 67A.
When it is considered that the organic solvent does not remain in the mixed liquid M produced by the mixing devices 10A to 10C, the controller 3 decreases the rotation speed of the exhaust fan 61B from the rotation speed R15 based on the combustible gas concentration (not shown) in the mixing device 10B measured by the gas concentration meter 67B.
When it is considered that the organic solvent does not remain in the mixed liquid M produced by the mixing devices 10A to 10C, the control unit 3 decreases the rotation speed of the exhaust fan 61C from the rotation speed R18 based on the combustible gas concentration (not shown) in the mixing device 10C measured by the gas concentration meter 67C.
When the combustible gas concentration in the exhaust passage 62 gradually decreases from the threshold concentration Cth, the control unit 3 decreases the rotation speed of the air supply fan 65 from the rotation speed R21 according to the combustible gas concentration in the exhaust passage 62.
Accordingly, when all the organic solvent evaporates from the mixed liquid M and it is not necessary to operate the exhaust unit 60 at the maximum output, it is possible to suppress an excessive load from being applied to the plant infrastructure.
Then, at time T34 when the combustible gas concentration in the exhaust passage 62 is returned to the lowest level concentration C0, the heating process of the mixing devices 10A to 10C is completed.
After the heating process, the control unit 3 starts the liquid feeding process of feeding the liquid mixture M to the processing tanks 31A to 31C from time T34. In the liquid feeding process, the inside of the mixing devices 10A to 10C may be maintained at a predetermined negative pressure (e.g., -90Pa) in order to keep the temperature and concentration of the mixed liquid M in the container 14 constant.
Therefore, in the modification, the control unit 3 maintains the rotation speed of the exhaust fan 61A at a predetermined rotation speed R11 in order to maintain the inside of the mixing device 10A at a predetermined negative pressure. Further, in order to maintain a predetermined negative pressure in the mixing device 10B, the control unit 3 maintains the rotation speed of the exhaust fan 61B at a predetermined rotation speed R14.
Further, the control unit 3 maintains the rotation speed of the exhaust fan 61C at a predetermined rotation speed R17 in order to maintain the inside of the mixing device 10C at a predetermined negative pressure. Then, the control unit 3 maintains the rotation speed of the air supply fan 65 at a predetermined rotation speed R20 in order to maintain the mixing devices 10A to 10C at a predetermined negative pressure.
The rotation speed R11 is greater than the rotation speed R10 and smaller than the rotation speed R12. The rotation speed R14 is greater than the rotation speed R13 and less than the rotation speed R15. The rotation speed R17 is greater than the rotation speed R16 and less than the rotation speed R18. The rotation speed R20 is greater than the rotation speed R19 and less than the rotation speed R21.
In other words, the amount of gas discharged from the mixing devices 10A to 10C to the exhaust passage 62 is adjusted by the exhaust fans 61A to 61C so that the pressure in the mixing devices 10A to 10C becomes a predetermined negative pressure during the liquid feeding process. Also, the amount of gas supplied from the gas supply line 64 to the gas discharge passage 62 is adjusted by the gas supply fan 65.
In this manner, by controlling the pressure in the mixing devices 10A to 10C to a predetermined negative pressure during the liquid feeding process, the temperature and concentration of the mixed liquid M fed during the liquid feeding process can be kept constant, and thus the liquid process in the substrate processing system 1 can be stably performed.
Fig. 11 is a timing chart showing a specific example of an operation pattern of each part of the exhaust unit 60 in various processes performed when the mixed liquid M is continuously fed to the mixing devices 10A to 10C according to the modification of the embodiment.
Fig. 11 illustrates the operation of each part of the exhaust unit 60 from time T40, in which the heating process is performed in the mixing device 10A, the mixing process is performed in the mixing device 10B, and the liquid feeding process is performed in the mixing device 10C for the processing tanks 31A to 31C in the ELC process at time T40.
At this time T40, since the temperature of the mixed liquid M in the mixing device 10A during the heating process reaches the predetermined temperature, the controller 3 sets the rotation speed of the exhaust fan 61A to the predetermined rotation speed R22 which is greater than the rotation speed R10.
At time T40, since the temperature of mixed liquid M in mixing device 10B during the mixing process is room temperature, controller 3 sets the rotation speed of exhaust fan 61B to the lowest rotation speed R13.
At time T40, controller 3 sets the rotation speed of exhaust fan 61C to a predetermined rotation speed R17 in order to maintain a predetermined negative pressure in mixing device 10C during the liquid feeding process. The rotation speed R17 is greater than the lowest rotation speed R16 and smaller than the rotation speed R24 when the mixed liquid M is maintained at the highest temperature.
Further, at time T40, since the mixing device 10A performs the heating process, a large amount of the combustible gas is discharged to the exhaust passage 62, and therefore the combustible gas concentration in the exhaust passage 62 is maintained at the threshold concentration Cth.
Then, the control unit 3 sets the rotation speed of the air supply fan 65 to a predetermined rotation speed R21 greater than the rotation speed R19, based on the combustible gas concentration in the exhaust passage 62.
Next, at time T41, all of the organic solvent evaporates from the mixed liquid M in the mixing device 10A, and the heating process starts in the mixing device 10B.
Here, the control unit 3 decreases the rotation speed of the exhaust fan 61A from the rotation speed R22 in accordance with the combustible gas concentration in the mixing device 10A in which the combustible gas concentration starts to decrease because all the organic solvent has evaporated.
Further, since the exhaust amount of the organic solvent discharged from the mixing device 10B to the exhaust duct 62, which starts the heating process, can be increased in accordance with the decrease in the exhaust amount of the organic solvent discharged from the mixing device 10A to the exhaust duct 62, the control unit 3 increases the rotation speed of the exhaust fan 61B from the rotation speed R13.
Then, at time T42, the combustible gas concentration in mixing device 10A becomes the lowest level, while the temperature of mixed liquid M in mixing device 10B reaches a predetermined temperature. Therefore, at this time T42, the control unit 3 sets the rotation speed of the exhaust fan 61B to a predetermined rotation speed R23.
At time T42, the liquid feeding process of the mixing device 10C is completed. Therefore, at this time T42, the control unit 3 sets the rotation speed of the exhaust fan 61C to the lowest rotation speed R16.
Since the liquid feeding process of the mixing device 10C is completed, the control unit 3 starts the liquid feeding process of the mixing device 10A at time T42 and sets the rotation speed of the exhaust fan 61A to the predetermined rotation speed R11.
Similarly, at the time of time T42, since the mixing device 10B performs the heating process, a large amount of combustible gas is discharged to the exhaust passage 62, and therefore the combustible gas concentration in the exhaust passage 62 is maintained at the threshold concentration Cth.
Therefore, the control unit 3 maintains the rotation speed of the air supply fan 65 at the rotation speed R21 according to the combustible gas concentration in the exhaust passage 62.
Next, at time T43, the organic solvent is completely evaporated from mixed liquid M in mixing device 10B, and the heating process is started in mixing device 10C.
Here, the control unit 3 decreases the rotation speed of the exhaust fan 61B from the rotation speed R23 in accordance with the combustible gas concentration in the mixing device 10B in which the combustible gas concentration starts to decrease because all the organic solvent has evaporated.
Further, since the exhaust amount of the organic solvent discharged from the mixing device 10C to which the heating process is started to the exhaust duct 62 can be increased in accordance with the decrease in the exhaust amount of the organic solvent discharged from the mixing device 10B to the exhaust duct 62, the control unit 3 increases the rotation speed of the exhaust fan 61C from the rotation speed R16.
Then, at time T44, the combustible gas concentration in mixing device 10B becomes the lowest level concentration, while the temperature of mixed liquid M in mixing device 10C reaches a predetermined temperature. Therefore, at this time T44, the control unit 3 sets the rotation speed of the exhaust fan 61C to a predetermined rotation speed R24.
At time T44, the liquid feeding process of mixing device 10A is completed. Therefore, at this time T44, the control unit 3 sets the rotation speed of the exhaust fan 61A to the lowest rotation speed R10.
Since the liquid feeding process of the mixing device 10A is completed, the control unit 3 starts the liquid feeding process of the mixing device 10B at time T44 and sets the rotation speed of the exhaust fan 61B to the predetermined rotation speed R14.
Similarly, at the time of time T44, since the mixing device 10C performs the heating process, a large amount of combustible gas is discharged to the exhaust passage 62, and therefore the combustible gas concentration in the exhaust passage 62 is maintained at the threshold concentration Cth.
Therefore, the control unit 3 maintains the rotation speed of the air supply fan 65 at the rotation speed R21 according to the combustible gas concentration in the exhaust passage 62.
Next, at time T45, all of the organic solvent evaporates from the mixed liquid M in the mixing device 10C, and the heating process starts in the mixing device 10A.
Here, the control unit 3 decreases the rotation speed of the exhaust fan 61C from the rotation speed R24 in accordance with the combustible gas concentration in the mixing device 10C, in which the combustible gas concentration starts to decrease because all the organic solvent has evaporated.
Further, since the exhaust amount of the organic solvent discharged from the mixing device 10A to the exhaust passage 62, which starts the heating process, can be increased in accordance with the decrease in the exhaust amount of the organic solvent discharged from the mixing device 10C to the exhaust passage 62, the control unit 3 increases the rotation speed of the exhaust fan 61A from the rotation speed R10.
Then, at time T46, the combustible gas concentration in mixing device 10C becomes the lowest level concentration, while the temperature of mixed liquid M in mixing device 10A reaches a predetermined temperature. Therefore, at this time T46, the control unit 3 sets the rotation speed of the exhaust fan 61A to a predetermined rotation speed R22.
At time T46, the liquid feeding process of the mixing device 10B is completed. Therefore, at this time T46, the control unit 3 sets the rotation speed of the exhaust fan 61B to the lowest rotation speed R13.
Since the liquid feeding process of the mixing device 10B is completed, the control unit 3 starts the liquid feeding process of the mixing device 10C at time T46 and sets the rotation speed of the exhaust fan 61C to the predetermined rotation speed R17.
Similarly, at the time of time T46, since the mixing device 10A performs the heating process, a large amount of combustible gas is discharged to the exhaust passage 62, and therefore the combustible gas concentration in the exhaust passage 62 is maintained at the threshold concentration Cth.
Therefore, the control unit 3 maintains the rotation speed of the air supply fan 65 at the rotation speed R21 according to the combustible gas concentration in the exhaust passage 62.
The subsequent processing from time T46 is the same as the above-described processing from time T40, and therefore, the description thereof is omitted.
As described above, in the modification, when the organic solvent remains in the mixed liquid M generated by at least one of the plurality of mixing devices 10, the rotation speed of the exhaust fan 61 provided in the mixing device 10 in which the organic solvent remains is increased to promote the evaporation of the organic solvent. Further, in the modification, the rotation speed of the exhaust fan 61 provided in the other mixing device 10 in which the organic solvent does not remain is reduced.
Thus, even when the plurality of mixing devices 10 share 1 exhaust gas duct 62, the combustible gas concentration in the gas flowing through the exhaust gas duct 62 can be reduced.
The substrate processing apparatus (substrate processing system 1) according to the embodiment includes a processing bath 31, a mixing device 10, a heating unit (first heater 19), a liquid feeding path 22, an exhaust fan 61, an exhaust passage 62, and a control unit 3. The processing bath 31 is used for immersing the substrate (wafer W) in a processing liquid (etching liquid E) to perform processing. The mixing device 10 mixes the phosphoric acid aqueous solution with an additive containing an organic solvent to produce a mixed solution M as a raw material of the treatment liquid (etching liquid E). The heating unit (first heater 19) is provided in the mixing device 10 and heats the mixed liquid M. The liquid feeding path 22 feeds the mixed liquid M from the mixing device 10 to the treatment tank 31. The exhaust fan 61 exhausts the gas in the mixing device 10. The exhaust passage 62 guides gas exhausted from the mixing device 10. The control unit 3 controls each unit. The control unit 3 adjusts the amount of gas discharged from the mixing device 10 to the exhaust duct 62 by the exhaust fan 61. This can reduce the concentration of combustible gas in the gas discharged from the mixing device 10 and flowing through the exhaust passage 62.
In the substrate processing apparatus (substrate processing system 1) according to the embodiment, the heating unit (first heater 19) heats the mixed liquid M to a temperature equal to or higher than the boiling point of the organic solvent. This enables stable etching processing to be performed in the processing bath 31.
In the substrate processing apparatus (substrate processing system 1) according to the embodiment, the control unit 3 controls the rotation speed of the exhaust fan 61 based on the temperature of the mixed liquid M. This can reduce the concentration of combustible gas in the gas discharged from the mixing device 10 and flowing through the exhaust passage 62.
In addition, the substrate processing apparatus (substrate processing system 1) of the embodiment further includes a gas supply line 64 and a gas supply fan 65. The supply line 64 is connected to the exhaust passage 62, and supplies dilution gas for diluting the combustible gas in the exhaust passage 62. The air supply fan 65 is used to adjust the supply amount of the diluent gas supplied from the air supply line 64 to the exhaust passage 62. This can further reduce the combustible gas concentration in the gas discharged from the mixing device 10 and flowing through the exhaust passage 62.
In the substrate processing apparatus (substrate processing system 1) according to the embodiment, the control unit 3 controls the rotation speed of the air supply fan 65 based on the combustible gas concentration in the exhaust passage 62. Further, the control unit 3 controls the rotation speed of the exhaust fan 61 based on the combustible gas concentrations in the mixing device 10 and the exhaust passage 62. This can reduce the concentration of combustible gas in the gas discharged from the mixing device 10 and flowing through the exhaust passage 62.
In the substrate processing apparatus (substrate processing system 1) according to the embodiment, the control unit 3 controls the rotation speed of the exhaust fan 61 and the rotation speed of the air supply fan 65 so that the concentration of the combustible gas in the exhaust passage 62 becomes equal to or lower than a predetermined threshold concentration Cth, which is lower than the lower explosion limit. This prevents explosion and the like from occurring in the exhaust passage 62 due to the combustible gas discharged from the mixing device 10.
In the substrate processing apparatus (substrate processing system 1) according to the embodiment, the controller 3 increases the rotation speed of the exhaust fan 61 when the organic solvent remains in the mixed liquid M. This can promote evaporation of the organic solvent remaining in the mixed liquid M in the container 14.
In the substrate processing apparatus (substrate processing system 1) according to the embodiment, the controller 3 decreases the rotation speed of the exhaust fan 61 when the organic solvent does not remain in the mixed liquid M. This can suppress an excessive load from being applied to the plant infrastructure when the organic solvent is completely evaporated from the mixed liquid M and it is not necessary to operate the exhaust unit 60 at the maximum output.
In the substrate processing apparatus (substrate processing system 1) according to the embodiment, the controller 3 determines whether or not the organic solvent remains in the mixed liquid M based on the concentration of the combustible gas in the exhaust passage 62. This can reduce the cost of the substrate processing system 1.
In the substrate processing apparatus (substrate processing system 1) according to the embodiment, the control unit 3 reduces the rotation speed of the exhaust fan 61 when the mixed liquid M is not heated by the heating unit (first heater 19). Thus, it is possible to suppress an excessive load from being applied to the plant infrastructure without actively operating the exhaust unit 60.
In the substrate processing apparatus (substrate processing system 1) according to the embodiment, the plurality of mixing devices 10 are connected to 1 exhaust passage 62. Further, when the organic solvent remains in the mixed liquid M generated by at least one of the plurality of mixing devices 10, the control unit 3 increases the rotation speed of the exhaust fan 61 provided in the mixing device 10 in which the organic solvent remains, and decreases the rotation speed of the exhaust fan 61 provided in the other mixing device 10 in which the organic solvent does not remain. Thus, even when the plurality of mixing devices 10 share 1 exhaust passage 62, the combustible gas concentration in the gas flowing through the exhaust passage 62 can be reduced.
< details of substrate processing >
Next, details of substrate processing performed by the substrate processing system 1 according to the embodiment will be described with reference to fig. 12. Fig. 12 is a flowchart showing processing steps of substrate processing according to the embodiment.
First, the control unit 3 performs a mixing process of mixing the phosphoric acid aqueous solution and the additive in the mixing device 10 (step S101). Then, the control unit 3 controls the first heater 19 to perform a heating process of heating the generated mixed liquid M (step S102).
Next, the control unit 3 controls the mixing device 10 and the first liquid feeding path 22a to carry out a liquid feeding process of feeding the mixed liquid M to the processing tank 31 (step S103).
In parallel with the processing of steps S101 to S103, the control unit 3 controls the exhaust unit 60 to perform an exhaust process of exhausting the gas in the mixing device 10 (step S104).
Next, the control unit 3 determines whether or not the organic solvent remains in the mixed liquid M in the container 14 of the mixing device 10 (step S105). When the organic solvent does not remain in the mixed liquid M in the container 14 of the mixing device 10 (no in step S105), the controller 3 decreases the rotation speed of the exhaust fan 61 (step S106).
After the end of the processes in step S103 and step S106, the control unit 3 determines whether or not the wafer immersion process is ended (step S107). When the immersion treatment of the wafer W is completed (yes in step S107), a series of substrate processing is completed.
On the other hand, if the immersion process of the wafer W is not completed (no in step S107), the process returns to steps S101 and S104.
In the process of step S105, if the organic solvent remains in the mixed liquid M in the container 14 of the mixing device 10 (yes in step S105), the controller 3 increases the rotation speed of the exhaust fan 61 (step S108).
Next, the control unit 3 determines whether or not the combustible gas concentration in the exhaust passage 62 is greater than a threshold concentration Cth (step S109).
When the combustible gas concentration in the exhaust passage 62 is higher than the threshold concentration Cth (yes in step S109), the control unit 3 decreases the rotation speed of the exhaust fan 61 (step S110) and increases the rotation speed of the supply air fan 65 (step S111). Then, after the process of step S111, the process returns to step S105.
On the other hand, if the combustible gas concentration in the exhaust passage 62 is not more than the threshold concentration Cth (no in step S109), the process returns to step S105.
The substrate processing method of an embodiment includes a heating process (step S102) and an exhaust process (step S104). In the heating step (step S102), the mixed solution M, which is a raw material of the treatment solution (etching solution E) for immersing the substrate (wafer W), is heated in the mixing device 10 that mixes the phosphoric acid aqueous solution and the additive containing the organic solvent to generate the mixed solution M. In the exhaust step (step S104), the gas in the mixing device 10 is discharged to the exhaust duct 62. In the exhaust step (step S104), the exhaust fan 61 adjusts the amount of gas exhausted from the mixing device 10 to the exhaust duct 62. This can reduce the concentration of combustible gas in the gas discharged from the mixing device 10 and flowing through the exhaust passage 62.
While the embodiments of the present disclosure have been described above, the present disclosure is not limited to the embodiments described above, and various modifications can be made without departing from the spirit and scope of the present disclosure. For example, the above-described embodiment shows an example in which the heating process for heating the mixed liquid M is performed only in the mixing device 10, but the present disclosure is not limited to this example, and for example, the mixing device 10 may perform a concentration process for heating and concentrating the mixed liquid M.
The embodiments disclosed in the specification are to be considered in all respects only as illustrative and not restrictive. In fact, the above embodiments can be embodied in various ways. The above embodiments may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the present invention.

Claims (13)

1. A substrate processing apparatus comprising:
a treatment tank for immersing the substrate in a treatment solution to perform a treatment;
a mixing device that mixes a phosphoric acid aqueous solution with an additive containing an organic solvent to generate a mixed solution as a raw material of the treatment liquid;
a heating unit provided in the mixing device and configured to heat the mixed liquid;
a liquid feeding path for feeding the mixed liquid from the mixing device to the treatment tank;
an exhaust fan that exhausts the gas in the mixing device;
an exhaust passage for guiding gas discharged from within the mixing device; and
a control part for controlling each part,
the control unit adjusts the amount of exhaust gas discharged from the mixing device to the exhaust passage by the exhaust fan.
2. The substrate processing apparatus according to claim 1,
the heating unit heats the mixed solution to a temperature equal to or higher than the boiling point of the organic solvent.
3. The substrate processing apparatus according to claim 1,
the control unit controls the rotation speed of the exhaust fan based on the temperature of the mixed liquid.
4. The substrate processing apparatus according to any one of claims 1 to 3, further comprising:
a gas supply line connected to the exhaust passage and supplying a dilution gas for diluting the combustible gas in the exhaust passage; and
a gas supply fan for adjusting a supply amount of the dilution gas supplied from the gas supply line to the exhaust passage.
5. The substrate processing apparatus according to claim 4,
the control portion controls the rotation speed of the air supply fan based on the combustible gas concentration in the exhaust passage,
and controlling the rotation speed of the exhaust fan based on the combustible gas concentrations in the mixing device and in the exhaust passage.
6. The substrate processing apparatus according to claim 5,
the control portion controls the rotation speed of the exhaust fan and the rotation speed of the air supply fan so that the concentration of the combustible gas in the exhaust passage is below a given threshold concentration, wherein the threshold concentration is lower than the lower explosion limit.
7. The substrate processing apparatus according to any one of claims 1, 2, 3, 5, and 6,
the control unit increases the rotation speed of the exhaust fan when the organic solvent remains in the mixed liquid.
8. The substrate processing apparatus according to any one of claims 1, 2, 3, 5, and 6,
the control unit reduces the rotation speed of the exhaust fan when the organic solvent does not remain in the mixed liquid.
9. The substrate processing apparatus according to claim 7,
the control unit determines whether the organic solvent remains in the mixed liquid based on a concentration of the combustible gas in the exhaust passage.
10. The substrate processing apparatus according to claim 8,
the control unit determines whether the organic solvent remains in the mixed liquid based on a concentration of the combustible gas in the exhaust passage.
11. The substrate processing apparatus according to any one of claims 1, 2, 3, 5, 6, 9, 10,
the control unit reduces the rotation speed of the exhaust fan when the mixed liquid is not heated by the heating unit.
12. The substrate processing apparatus according to any one of claims 1, 2, 3, 5, 6, 9, 10,
a plurality of said mixing devices are connected to 1 of said exhaust passages,
the control unit increases the number of rotations of the exhaust fan provided to the mixing device in which the organic solvent remains and decreases the number of rotations of the exhaust fan provided to the other mixing device in which the organic solvent does not remain, when the organic solvent remains in the mixed liquid generated by at least one of the plurality of mixing devices.
13. A method of processing a substrate, comprising:
a heating step of heating a mixed solution in a mixing device that mixes a phosphoric acid aqueous solution and an additive containing an organic solvent to generate the mixed solution, the mixed solution being a raw material of a treatment solution for immersing a substrate; and
an exhaust step of discharging the gas in the mixing device to an exhaust passage,
in the exhaust step, an exhaust fan is used to adjust the amount of gas exhausted from the mixing device to the exhaust passage.
CN202111524719.1A 2020-12-23 2021-12-14 Substrate processing apparatus and substrate processing method Pending CN114664691A (en)

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