CN114659465B - Method and device for rapidly measuring micro-nano cross-scale surface structure - Google Patents
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Abstract
The invention discloses a method and a device for quickly measuring a micro-nano cross-scale surface structure, and belongs to the field of optical and electronic manufacturing precision measurement. The invention is based on a micro-nano trans-scale surface structure measuring device of white light interference, and realizes rapid high-precision measurement by changing a piezoelectric worktable scanning strategy and a white light interference signal sampling mode. Firstly, prescanning a piezoelectric worktable, and acquiring displacement data of the worktable moving at equal time intervals by adopting a displacement sensor; secondly, performing high-precision fitting on a time-displacement curve by using a neural network algorithm to obtain a non-uniform time sequence corresponding to an equal displacement interval; thirdly, placing a sample to be measured in a silicon cantilever beam nanometer measurement mode, enabling a piezoelectric working platform to reciprocate according to pre-scanning parameters, and simultaneously sampling a white light interference signal on the upper surface of the silicon cantilever beam by a signal acquisition card according to a non-uniform time sequence corresponding to the equal displacement intervals; fourthly, processing the white light interference signal to obtain a three-dimensional structure of the surface of the sample, and finishing the measurement.
Description
Technical Field
The invention belongs to the technical field of optical and electronic manufacturing precision measurement and micro-nano manufacturing, and particularly relates to a micro-nano cross-scale surface structure rapid measurement method and device.
Background
With the development of micro-nano manufacturing and precision measurement technology, the cross-scale micro-nano combined surface structure becomes an important surface feature of key components in the fields of photoelectrons, ICs, MEMS, solar cells, laser holographic anti-counterfeiting, planar display and the like. The overall macroscopic size of the features is gradually increased, and the precision requirement is continuously improved, so that the rapid and accurate measurement is the key technical requirement of a micro-nano cross-scale surface structure measurement system.
The white light interference silicon cantilever nanometer probe measuring system which is based on white light interference and integrates two measuring modes of white light interference and silicon cantilever nanometer probe measurement has two measuring modes of white light interference and silicon cantilever nanometer probe, and can respectively realize measurement of micron, nanometer and micro-nanometer cross-scale combined surface structures in the manufacturing fields of IC, MEMS and the like.
However, in the micro-nano cross-scale surface structure measurement system, the piezoelectric worktable has low positioning accuracy due to the existence of a complex nonlinear hysteresis effect, so that the surface structure reconstructed based on the white light interference signals acquired at equal time intervals by scanning the corresponding piezoelectric worktable is distorted, and the surface structure measurement accuracy is finally reduced.
Closed-loop control is the main method for hysteresis compensation of the piezoelectric ceramic scanning table. However, closed loop control greatly reduces the piezo drive scan speed. In order to improve the medium-voltage drive scanning speed in micro-nano surface measurement, the existing research adopts feedforward control based on an inverse hysteresis model. However, the shape of the piezoelectric ceramic hysteresis loop is related to the application process, the size, the frequency and the load of the driving voltage, and all the factors influence the modeling of the piezoelectric ceramic hysteresis characteristic curve and the selection of model parameters. When the micro-nano trans-scale surface structure measurement system is used for scanning and measuring a sample each time, each parameter is possibly changed along with different sample and test requirements, so that extremely high requirements are provided for the accuracy and the adaptability of the model, the linearization precision is greatly reduced, and the accuracy of a measurement result is further influenced.
Disclosure of Invention
Aiming at the defects or the improvement requirements of the prior art, the invention provides a method and a device for quickly measuring a micro-nano trans-scale surface structure, and aims to perform pre-scanning on a piezoelectric worktable of a micro-nano trans-scale surface structure measuring device based on a white light interference principle, acquire time-displacement data of the worktable by using a capacitance sensor, and fit a time-displacement curve by using a BP neural network algorithm, so that a working curve of the piezoelectric worktable can be obtained, and high-precision positioning control of the piezoelectric worktable can be realized in an open-loop control mode based on the working curve, so that the technical problem of low closed-loop control measuring speed is solved. And then, based on a curve fitted by the BP neural network, calculating a time sequence with equal displacement intervals through further calculation, and carrying out white light interference signal acquisition by a signal acquisition card according to the time sequence, thereby solving the technical problem of low measurement precision caused by surface reconstruction image distortion due to uneven sampling distance.
In order to achieve the above object, according to an aspect of the present invention, there is provided a method for rapidly measuring a micro-nano cross-scale surface structure, including:
s1, setting the scanning speed and range of a piezoelectric worktable according to the size of a sample to be measured;
s2, under a silicon cantilever beam nanometer measurement mode based on a white light interference principle, an upper computer sends a measurement scanning control signal to the piezoelectric worktable, and the piezoelectric worktable performs scanning motion through open-loop control;
s3, collecting displacement data of the piezoelectric working table at equal time intervals by using a displacement capacitance sensor to obtain a series of time-displacement discrete data sets;
s4, carrying out nonlinear curve fitting on the obtained time-displacement discrete data set to obtain a scanning time-displacement curve model of the piezoelectric worktable;
s5, according to the scanning time-displacement curve model of the piezoelectric workbench, calculating to obtain a non-uniform time sequence corresponding to the scanning equidistant displacement of the piezoelectric workbench;
s6, driving the piezoelectric worktable to move through open-loop control by adopting a measuring scanning control signal which is the same as that in the step S2; and under the nano measurement mode of the silicon cantilever beam, sampling a white light interference signal on the upper surface of the silicon cantilever beam according to the time corresponding to the non-uniform time sequence, and recovering the three-dimensional morphology of the sampled white light interference measurement signal to obtain the surface morphology of the sample to be measured.
Preferably, a neural network algorithm is used to perform a non-linear curve fit on the time-displacement discrete data set obtained by the pre-scanning.
Preferably, a BP neural network algorithm is adopted to perform nonlinear curve fitting on the time-displacement discrete data set obtained by pre-scanning.
Furthermore, the method is suitable for the fields of photoelectron, IC, MEMS and optical holographic anti-counterfeiting.
According to another aspect of the present invention, there is provided a micro-nano cross-scale surface structure rapid measurement apparatus, comprising: the system comprises a piezoelectric driver, a piezoelectric worktable, a displacement capacitance sensor, an upper computer, a silicon cantilever probe white light interference system and a signal acquisition card;
the piezoelectric driver is used for receiving a measurement scanning control signal sent by an upper computer and driving the piezoelectric worktable to scan and move through open-loop control in a silicon cantilever beam nanometer measurement mode based on the white light interference principle;
the piezoelectric working table is used for dragging a tested sample to carry out nano-scale measurement in a silicon cantilever beam nano-measurement mode;
the displacement capacitance sensor is used for acquiring the output displacement of the piezoelectric worktable;
the upper computer is used for sending a measurement scanning control signal to the piezoelectric driver in a pre-scanning stage; receiving the displacement value measured by the displacement capacitance sensor; carrying out nonlinear curve fitting on a time-displacement discrete data set obtained by pre-scanning, and establishing a piezoelectric worktable time-displacement curve model; calculating a non-uniform time sequence corresponding to the equidistant displacement of the piezoelectric working table; the upper computer sends a measurement scanning control signal which is the same as the measurement scanning control signal in the pre-scanning stage to the piezoelectric driver in the silicon cantilever nano measurement mode;
the signal acquisition card is used for acquiring white light interference measurement signals on the upper surface of the silicon cantilever beam in a silicon cantilever beam nanometer measurement mode according to the time corresponding to the non-uniform time sequence corresponding to the equal-interval displacement of the piezoelectric working platform;
the silicon cantilever probe white light interference system is used for measuring a sample surface structure with a nanoscale, and recovering the three-dimensional morphology of a sampled white light interference measurement signal to obtain the surface morphology of a sample to be measured.
In general, the above technical solutions conceived by the present invention can achieve the following advantageous effects compared to the prior art.
The invention utilizes the characteristics of the round-trip repeatability and the scanning parameter consistency of the micro-nano cross-scale surface structure measurement, proposes to adopt the pre-scanning of the measurement scanning signal, and adopts a neural network algorithm to carry out nonlinear curve fitting based on the time and displacement relation data obtained by the pre-scanning, establishes a piezoelectric worktable time-displacement curve model, further obtains a non-uniform time sequence corresponding to the linear equidistant movement of the corresponding piezoelectric worktable during the measurement scanning based on the model, thereby sampling the white light interference fringe signal on the upper surface of the silicon cantilever beam by a signal acquisition card according to the non-uniform time sequence through open loop control under the silicon cantilever beam nano measurement mode, and further realizing the rapid and accurate scanning measurement; according to the method, micro-nano cross-scale surface structure dimension measurement is carried out on the standard grating, and data acquisition is carried out by adopting an equal displacement-non-uniform time sampling method, so that rapid high-precision scanning measurement can be realized.
Compared with the traditional hysteresis compensation method, the rapid measurement method provided by the invention has the following remarkable advantages: firstly, the precision of the non-uniform sampling time sequence obtained by the neural network algorithm fitting is higher than that of a feedforward inverse lag model, so that the linearization precision is improved; secondly, the piezoelectric scanning table controls continuous scanning in an open loop mode, so that the scanning speed is greatly improved; thirdly, sampling white light interference signals of an equal interval-non-uniform time sequence, thereby improving the measurement precision of the surface structure; the method has strong feasibility and wide application range.
Drawings
Fig. 1 is a schematic view of an application environment of micro-nano cross-scale structure surface measurement provided by an embodiment of the invention.
FIG. 2 is a schematic diagram of a method for rapidly and accurately measuring a micro-nano cross-scale surface structure provided by the invention.
FIG. 3 is a diagram of a pre-scan path of a piezoelectric stage in a silicon cantilever nano-measurement mode.
FIG. 4 is a diagram of the high-precision curve fitting principle of the BP neural network.
Fig. 5 is a diagram of uniformly sampling discrete data sets at equal time intervals.
Figure 6 is a piezo-electric drive time-displacement curve fitted using a neural network algorithm.
FIG. 7 is a non-uniform sampling time series resulting from a linearization of the hysteresis curve.
FIG. 8 is a three-dimensional measurement of a standard grating sampled in a non-uniform displacement-uniform time series.
FIG. 9 is a three-dimensional measurement of a standard grating used for an equal displacement-non-uniform time series.
The device comprises a host computer 1, a high-resolution displacement metering system 2, a pyramid prism 3, a white light interference signal acquisition card 4, a nanoscale vertical measurement micro-displacement platform 5, a white light interference measuring system 6, a Mirau interference objective lens 7, a silicon cantilever nanoprobe 8, a sample to be measured 9, a piezoelectric driver 10, a laser interference metering large-range horizontal displacement platform 11, a capacitance sensor 12, a piezoelectric worktable 13 and a turntable 14.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and do not limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
As shown in fig. 1, an optional system for measuring a surface of a micro-nano cross-scale structure in an embodiment of the present invention includes: the device comprises an upper computer 1, a high-resolution displacement metering system 2, a pyramid prism 3, a white light interference signal acquisition card 4, a nanoscale vertical measurement micro-displacement platform 5, a white light interference measuring system 6, a Mirau interference objective lens 7, a silicon cantilever nano probe 8, a sample to be measured 9, a piezoelectric driver 10, a laser interference metering large-range horizontal displacement platform 11, a capacitance sensor 12, a piezoelectric worktable 13 and a rotary table 14. The working principle is that the system has two modes of white light interference micrometer measurement and silicon cantilever nanometer measurement. The micrometer scale measurement is carried out by switching to a white light interference measurement mode through the turntable 14, communicating the white light interference system 6 with the light path of the Mirau interference objective lens 7, driving the nanoscale vertical micro-displacement platform 5 to generate appropriate white light interference fringes on the surface of the sample 9 to be measured, and driving the nanoscale vertical micro-displacement platform 5 to move upwards to lift the white light interference system 6 until the white light interference fringes completely disappear. The nanoscale vertical micrometric displacement platform 5 is driven by a micro step pitch to drive the white light interference system 6 to downwards carry out vertical scanning measurement until a white light interference zero-order fringe sweeps the whole measured area of a sample 9 to be measured, the pyramid prism 3 is driven to downwards move at the same time, the displacement of the downward movement of the Mirau interference objective lens 7 is measured through the high-resolution displacement metering system 2, a white light interference image of the corresponding measured area is obtained through the white light interference signal acquisition card 4, and a measurement result of the measured area is obtained through a white light interference reconstruction algorithm. Rotating the turntable 14, switching to a silicon cantilever nanometer measurement mode, generating appropriate white light interference fringes on the cantilever of the silicon cantilever nanometer probe 8, controlling and driving the nanometer vertical micro-displacement platform 5 to drive the white light interference system 6 to move downwards, enabling the needle point of the silicon cantilever nanometer probe 8 to contact with the surface of the sample 9 to be measured and generate micro-extrusion, controlling and driving the piezoelectric worktable 13 to drag the sample 9 to be measured for measurement, acquiring a white light interference image on the cantilever of the silicon cantilever nanometer probe 8 through the white light interference signal acquisition card 4, keeping the white light interference fringes on the cantilever of the silicon cantilever nanometer probe 8 within a certain range through controlling and driving the nanometer vertical micro-displacement platform 5 to move vertically, measuring and storing the displacement through the laser interference measurement large-range horizontal displacement platform 11, after completing scanning measurement, controlling and driving the nanometer vertical micro-displacement platform 5 to enable the needle point of the silicon cantilever nanometer probe 8 to be separated from the surface of the sample 9 to be measured, and a reconstruction algorithm is used to obtain the measurement results.
Referring to fig. 2, a method for implementing rapid measurement of a micro-nano surface structure in the fields of photoelectrons, ICs, MEMS, optical holographic anti-counterfeiting and the like by a micro-nano cross-scale structure surface measurement system includes:
s1, setting the scanning speed and range of a piezoelectric working table according to the size of a sample to be detected;
s2, under a silicon cantilever beam nanometer measurement mode based on a white light interference principle, an upper computer sends a measurement scanning control signal to a piezoelectric working table, and the piezoelectric working table is made to perform scanning movement through open-loop control;
s3, collecting displacement data of the piezoelectric worktable at equal time intervals by using a displacement capacitance sensor to obtain a series of time-displacement discrete data sets;
s4, carrying out nonlinear curve fitting on the obtained time-displacement discrete data set to obtain a scanning time-displacement curve model of the piezoelectric worktable;
s5, calculating to obtain a non-uniform time sequence corresponding to scanning equidistant displacement of the piezoelectric worktable according to a scanning time-displacement curve model of the piezoelectric worktable;
s6, driving the piezoelectric worktable to move through open-loop control by adopting a measuring and scanning control signal which is the same as that in the step S2; and under the nano measurement mode of the silicon cantilever beam, sampling a white light interference signal on the upper surface of the silicon cantilever beam according to the time corresponding to the non-uniform time sequence, and recovering the three-dimensional morphology of the sampled white light interference measurement signal to obtain the surface morphology of the sample to be measured.
Based on the method, the embodiment of the invention also provides a device for rapidly measuring the surface of the micro-nano trans-scale structure, which comprises the following steps: the system comprises a piezoelectric driver, a piezoelectric worktable, a displacement capacitance sensor, an upper computer, a silicon cantilever probe white light interference system and a signal acquisition card; the piezoelectric driver is used for receiving a measurement scanning control signal sent by an upper computer and driving the piezoelectric worktable to perform scanning motion through open-loop control in a silicon cantilever beam nanometer measurement mode based on a white light interference principle; the piezoelectric working table is used for dragging a tested sample to carry out nano-scale measurement in a silicon cantilever beam nano-measurement mode; the displacement capacitance sensor is used for acquiring the output displacement of the piezoelectric worktable; the upper computer is used for sending a measuring scanning control signal to the piezoelectric driver in the pre-scanning stage; receiving the displacement value measured by the displacement capacitance sensor; carrying out nonlinear curve fitting on a time-displacement discrete data set obtained by pre-scanning, and establishing a piezoelectric worktable time-displacement curve model; calculating a non-uniform time sequence corresponding to the equal-distance displacement of the piezoelectric working table; the upper computer sends a measurement scanning control signal which is the same as the measurement scanning control signal in the pre-scanning stage to the piezoelectric driver in the silicon cantilever nano measurement mode; the signal acquisition card is used for acquiring white light interference measurement signals on the upper surface of the silicon cantilever beam in a silicon cantilever beam nanometer measurement mode according to the time corresponding to the non-uniform time sequence corresponding to the equal-interval displacement of the piezoelectric working platform; the silicon cantilever probe white light interference system is used for measuring a sample surface structure with a nanoscale, and recovering the three-dimensional morphology of a sampled white light interference measurement signal to obtain the surface morphology of a sample to be measured.
In the silicon cantilever nanometer measurement mode, the piezoelectric worktable performs prescan under the drive of a certain input signal, and the scanning path is as shown in fig. 3. Fitting the obtained discrete uniformly time sampled piezoelectric drive output displacements into a continuous piezoelectric drive output time-displacement using a neural network algorithmCurve line. The BP neural network process is shown in fig. 4, and the neural network is composed of an input layer, a double hidden layer and an output layer. Wherein the input layer is the first
A shift sampling sequence
(ii) a The output layer is the first
Predicted position values corresponding to shifted sample sequences
(ii) a The weight coefficient matrixes between the input layer and the hidden layer, between the hidden layer and the hidden layer, and between the hidden layer and the output layer are respectively
And
wherein, the operation relationship is a matrix multiplication relationship, namely:
calculating the sample sequence predicted position values of all training sets
And the actual measured value
E, adjusting the weight coefficient matrix according to the error E
And
and re-iteratively calculating the predicted position value
Until the sample sequence of all training sets predicts the position value
When the preset conditions are met and the sampling sequence prediction position values of all the test sets are calculated simultaneously, the weight coefficient of the neural network can be completed
And
wherein the error is calculated by the following formula:
wherein,
is a first
Actual measured values corresponding to the sampling signals;
the output displacement data of discrete uniform time sampling obtained by prescanning the piezoelectric working table under the driving of the input signal received by the upper computer is shown in fig. 5, and it can be seen that the displacement intervals obtained under the uniform time sequence are different; fig. 6 shows a continuous time-displacement curve obtained by fitting through a BP neural network, and fig. 7 shows an equal-displacement non-uniform sampling time sequence obtained from the time-displacement curve. In the measurement driving scanning, the atomic force probe cantilever white light interference signal is sampled according to the time corresponding to the obtained non-uniform time sequence, so that accurate linear scanning measurement is realized.
As shown in fig. 8, a non-equipotential displacement-uniform time sequence sampling strategy is adopted to perform three-dimensional surface measurement on a micro-nano cross-scale surface structure measurement system on a standard grating, wherein x and y in fig. 8 represent two-dimensional plane coordinates, a black bottom represents that the surface height of a sample image is 0 micrometer, the whitest represents that the surface height of the sample image is 0.02 micrometer, and color gradient in the graph represents that the surface height of the sample image is changed from 0 micrometer to 0.02 micrometer, so that the scanned image is distorted; and according to the method, the three-dimensional measurement of the surface of the standard grating is carried out, and the data acquisition is carried out by adopting an equal displacement-non-uniform time sampling method, wherein the result is shown in figure 9, x and y in figure 9 represent two-dimensional plane coordinates, the black bottom represents that the surface height of the sample image is 0 micron, the whitest represents that the surface height of the sample image is 0.02 micron, and the color gradient in the figure represents that the surface height of the sample image is changed from 0 to 0.02 micron.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (6)
1. A micro-nano cross-scale surface structure rapid measurement method is characterized by comprising the following steps:
s1, setting the scanning speed and range of a piezoelectric worktable according to the size of a sample to be measured;
s2, under a silicon cantilever beam nanometer measurement mode based on a white light interference principle, an upper computer sends a measurement scanning control signal to the piezoelectric worktable, and the piezoelectric worktable performs scanning motion through open-loop control;
s3, collecting displacement data of the piezoelectric working table at equal time intervals by using a displacement capacitance sensor to obtain a series of time-displacement discrete data sets;
s4, carrying out nonlinear curve fitting on the obtained time-displacement discrete data set by adopting a neural network algorithm to obtain a scanning time-displacement curve model of the piezoelectric worktable;
s5, calculating to obtain a non-uniform time sequence corresponding to scanning equidistant displacement of the piezoelectric worktable according to a scanning time-displacement curve model of the piezoelectric worktable;
s6, driving the piezoelectric worktable to move through open-loop control by adopting a measuring scanning control signal which is the same as that in the step S2; and under the nanometer measurement mode of the silicon cantilever beam, sampling a white light interference signal on the upper surface of the silicon cantilever beam according to the time corresponding to the non-uniform time sequence, and recovering the three-dimensional morphology of the sampled white light interference measurement signal to obtain the surface morphology of the sample to be measured.
2. The method for rapidly measuring the micro-nano trans-scale surface structure according to claim 1, wherein a time-displacement discrete data set obtained by pre-scanning is subjected to nonlinear curve fitting by adopting a BP neural network algorithm.
3. The method for rapidly measuring the micro-nano trans-scale surface structure according to claim 1 or 2, wherein the method is suitable for the fields of photoelectron, IC, MEMS and optical holographic anti-counterfeiting.
4. A micro-nano cross-scale surface structure rapid measurement device is characterized by comprising: the system comprises a piezoelectric driver, a piezoelectric worktable, a displacement capacitance sensor, an upper computer, a silicon cantilever probe white light interference system and a signal acquisition card;
the piezoelectric driver is used for receiving a measurement scanning control signal sent by an upper computer and driving the piezoelectric worktable to perform scanning motion through open-loop control in a silicon cantilever beam nanometer measurement mode based on the white light interference principle;
the piezoelectric working table is used for dragging a tested sample to carry out nano-scale measurement in a silicon cantilever beam nano-measurement mode;
the displacement capacitance sensor is used for acquiring the output displacement of the piezoelectric worktable;
the upper computer is used for sending a measurement scanning control signal to the piezoelectric driver in a pre-scanning stage; receiving the displacement value measured by the displacement capacitance sensor; carrying out nonlinear curve fitting on the time-displacement discrete data set obtained by pre-scanning by adopting a neural network algorithm, and establishing a time-displacement curve model of the piezoelectric worktable; calculating a non-uniform time sequence corresponding to the equidistant displacement of the piezoelectric working table; the upper computer sends a measurement scanning control signal which is the same as the measurement scanning control signal in the pre-scanning stage to the piezoelectric driver in the silicon cantilever nano measurement mode;
the signal acquisition card is used for acquiring white light interference measurement signals on the upper surface of the silicon cantilever beam in a silicon cantilever beam nanometer measurement mode according to the time corresponding to the non-uniform time sequence corresponding to the equal-interval displacement of the piezoelectric working platform;
the silicon cantilever probe white light interference system is used for measuring a sample surface structure with a nanoscale, and recovering the three-dimensional morphology of a sampled white light interference measurement signal to obtain the surface morphology of a sample to be measured.
5. The device for rapidly measuring the micro-nano trans-scale surface structure according to claim 4, wherein a BP neural network algorithm is adopted to perform nonlinear curve fitting on a time-displacement discrete data set obtained by pre-scanning.
6. The device for rapidly measuring the micro-nano trans-scale surface structure according to claim 4 or 5, wherein the device is suitable for the fields of photoelectron, IC, MEMS and optical holographic anti-counterfeiting.
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| CA2126008A1 (en) * | 1994-06-16 | 1995-12-17 | Dimiter Ivanov Yordanov | Method and apparatus for high resolution three dimensional scanning and non-linear assessment of surfaces |
| CN105783771B (en) * | 2016-03-04 | 2018-09-28 | 镇江超纳仪器有限公司（中外合资） | The method of white light interference vertical scanning method non-linear open-loop scanning |
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