CN1146588A - Making method for mangetic resistance effect type magnetic head and used crystal chip - Google Patents
Making method for mangetic resistance effect type magnetic head and used crystal chip Download PDFInfo
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- CN1146588A CN1146588A CN96108377A CN96108377A CN1146588A CN 1146588 A CN1146588 A CN 1146588A CN 96108377 A CN96108377 A CN 96108377A CN 96108377 A CN96108377 A CN 96108377A CN 1146588 A CN1146588 A CN 1146588A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3103—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing
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Abstract
To produce a magnetoresistance type magnetic head satisfying desired electromagnetic transducing characteristics at a good yield by exactly measuring the MR height after polishing the floating surface of magneto-resistive elements. The magneto-resistive elements and elements for resistance measurement varying in the MR height are formed on a wafer. The parts including these elements are cut as slider bars and are polished, thereby, the surface corresponding to the floating surface of the magneto-resistive elements are polished and the desired height is determined in accordance with the resistance values of the elements varying in MR height at the time of forming the MR height to have a desired height.
Description
The present invention relates to a kind of manufacture method of the magnetic effective film magnetic head that is used for magnetic store etc. and have the wafer of resistance-effect type element.
The thin-film head of magnetic resistance effect type (hereinafter referred to as the MR magnetic head) is the magnetic head that adopts magneto-resistance effect element (hereinafter referred to as the MR element).Because the characteristic that the MR element utilizes 3 resistance to change with magnetic field intensity, so regeneration output does not rely on the speed of travel (peripheral speed) of magnetic recording medium, only the magnetic flux by magnetic signal determines, even thereby also can obtain enough regeneration output at low speed, favourable to densification, the miniaturization of magnetic recording system.
The manufacture method of this MR magnetic head is as follows.At first form technology and photoetching technique, go up to make at wafer (ウ エ Ha) and folded the element of multilayer with film.Afterwards, wafer is cut into the draw runner (ス ラ イ ダ-バ-) that a plurality of elements form a line.Then, the substrate of the draw runner that cuts off is carried out attrition process, that grinds each element exposes face (above floating), thereby obtains having the size (to call the MR height in the following text) of the magnetoresistive effect sensor film of desired value.The MR here highly for the size of the perpendicular magnetoresistive effect sensor film of the regenerative track width that is formed on the magneto-resistance effect element on the wafer.
MR height in the MR magnetic head is in order to obtain the key factor of desired electrical characteristics, so be necessary to hold the MR height of each actual components.Yet actual components MR height separately is because laminations such as recording magnetic head and diaphragm are had any problem so carry out optical measurement on magnetoresistance effect film.Therefore, expose during face grinds, measure the resistance change of the processing detecting element that with actual components respectively dispose on one side, there is the draw runner of a plurality of actual components to grind to row on one side.
Japanese patent laid-open 4-360008 discloses the technology of controlling the MR height by this method accurately.In the method, the face that exposes with resistance identical with the final resistance of desired processing detecting element is set in substrate grinds guide, stop the actual face that exposes according to this resistance value and grind, thereby can grind accurately and expose face.
Above-mentioned prior art is provided with the thickness and the size and inhomogeneous of all position actual components each several parts of considering in wafer face, there is deviation to a certain degree, in addition, also be provided with consideration is produced the attrition process amount by the position of actual components deviation, the MR of each actual components highly has difference to a certain degree, therefore, the problem that has the qualified rate variance of manufacturing of MR magnetic head.
But the 1st purpose of the present invention is to provide a kind of wafer that exposes the MR height after the face attrition process of correct measurement MR element.
The 2nd purpose of the present invention be to provide a kind of can High Accuracy Control MR element expose the face attrition process time the MR magnetic head manufacturing method of MR height.
For realizing above-mentioned the 1st purpose, wafer configuration of the present invention has other magneto-resistance effect element of the different MR height of magneto-resistance effect element and MR height more than 1 and this magneto-resistance effect element (being formed at the size of the magnetoresistance sensing membrane on the direction vertical with the regenerative track Width of the magneto-resistance effect element on the wafer).
This magneto-resistance effect element constitute a plurality of one group towards element line unidirectional and that form a line, this element line is located on the wafer with the form of multiple row, and is preferably at least 1 other above-mentioned magneto-resistance effect element of each element line setting.
The manufacture method of magneto-resistive effect magnetic head will describe in detail in the back, and this wafer cuts off by each element line, becomes draw runner, then it is ground.Therefore, each draw runner preferably is provided with other magneto-resistance effect element more than 1.General this number is preferably in below 5.
Generally speaking, 30～250 elements are lined up 1 row, have the occasion of 50～300 row more on the wafer.The parts number of 1 row cuts off the element line of these 1 row as 1 group after a little while, forms 1 draw runner.Yet the parts number of 1 row is divided into 2 set of pieces row in the cardinal principle centre for a long time, it is cut off forming 2 draw runners.In the manufacture method of reality, for example, wafer cut off along the right angle orientation of above-mentioned row be divided into 2 parts, cut into element line one by one again, form a plurality of draw runners.
Be preferably in more than 1 below 5 though narrated other magneto-resistance effect element in the above, also can reduce this number.That is, will be as 1 zone about 10～50 row of the said elements of desired scope row, each should be at least 1 by other set magneto-resistance effect element of zone, be preferably between 1 to 5, when grinding the draw runner that obtains by this zone cut-out, can carry out according to the resistance value of the element in this zone.As previously mentioned, even because the position in the wafer face causes the thickness of actual components each several part and the occasion that size produces deviation, also owing to this deviation in a certain zone concentrates on narrow and small scope, even thereby as described above can be with High Accuracy Control MR height.
For reaching above-mentioned the 2nd purpose, the manufacture method of magneto-resistive effect magnetic head of the present invention may further comprise the steps:
Prepare the step of wafer.With magneto-resistance effect element and be formed at magneto-resistance effect element on the wafer in the size of the magnetoresistance sensing membrane of the direction vertical during as the MR height with the regenerative track Width, dispose 1 other magneto-resistance effect element at least with MR height highly different with the MR of above-mentioned magneto-resistance effect element;
Composed component row, in this element line above-mentioned magneto-resistance effect element with a plurality of be one group, in the same direction and line up 1 row;
Multiple row said elements row are set;
Measure the step of the resistance value of the resistance value of above-mentioned magneto-resistance effect element and above-mentioned other magneto-resistance effect element;
The part that is formed with the said elements row of wafer is cut off to form the step of draw runner; And
Will with respect to ground the magneto-resistance effect element on the wafer expose magnetoresistance inductor film behind the face expose face along the target size of direction inwards during as MR induction height.
According to the resistance value of the magneto-resistance effect element of the MR sensor height of determining by above-mentioned resistance value, grind the face that exposes of above-mentioned magneto-resistance effect element on the above-mentioned draw runner, its MR is highly formed the step of MR sensing height.
In addition, for reaching above-mentioned the 2nd purpose, the manufacture method of magneto-resistive effect magnetic head of the present invention may further comprise the steps:
Prepare the step of wafer: with magneto-resistance effect element with a plurality of be 1 group and towards same direction and line up 1 row, this element line of configuration multiple row.
When the size of the magnetoresistive effect sensor film on the direction vertical of the magneto-resistance effect element that will be formed at wafer during as the MR height with the regenerative track Width, dispose at least 2 other magneto-resistance effect elements, these at least 2 other magneto-resistance effect elements have the MR height highly different and also different each other with the MR of above-mentioned magneto-resistance effect element;
Measure the step of the resistance value of above-mentioned at least 2 other magneto-resistance effect elements;
Cut off the part that is formed with the said elements row of above-mentioned wafer, form the step of draw runner; And
According to the resistance value of the magneto-resistance effect element of the MR sensor height of determining by above-mentioned resistance value, grind the face that exposes of above-mentioned magneto-resistance effect element on the above-mentioned draw runner, its MR is highly formed the MR sensor height.
This is, as the MR height that makes other magneto-resistance effect element exposes face greater than grinding and the above-mentioned MR sensor height that obtains, that is the height of the MR when becoming product, owing to can grind and form above-mentioned MR sensor height by exposing face, so other magneto-resistance effect element can be used as product.
Fig. 1 is the oblique view of the draw runner that the 1st embodiment obtains according to the present invention;
Fig. 2 is the local oblique view of MR magnetic head;
Fig. 3 is the planimetric map that is used to illustrate the magnetoresistive effect sensor membrane portions;
Fig. 4 is the oblique view of the draw runner that obtains according to embodiments of the invention 3;
Fig. 5 is the oblique view of the draw runner that obtains according to embodiments of the invention 4.
The present invention is described in detail will to adopt accompanying drawing below.
＜embodiment 1 〉
Fig. 1 is the oblique view of an example of the used draw runner of the present invention (ス ラ イ ダ-バ-).Among the figure, A is an actual components, B1, B2, B3 for a change the element that is used to measure resistance of MR height, C uses element for processing detects.Much less, the allocation position of these elements and number can be set at the optional position and the number of technical the best.For example, the number of actual components A is provided with more morely.
Fig. 2 is the local oblique view of the MR magnetic head of the present invention that is made of actual components A.Based on this figure, that the summary description of wafer fabrication process is as follows.On ceramic substrate 1, have by the film formed bottom of magnetic such as NiFe screened film (シ-Le De film) 2 and by insulation film formed bottom slit membrane (ギ ャ Star プ film) (not shown) such as aluminium oxide, form the magnetoresistive effect sensor film 3 of strip thereon.Magnetoresistive effect sensor film 3 is made of the magnetoresistance effect film that uses magnetic material such as NiFe, the multilayer films such as magnetic domain control film that added the magnetic bias film of magnetic bias and be used for stablizing the magnetoresistance effect film magnetic domain at magnetoresistance effect film.On them, also be formed with the effect of supplying electric current so that the electrode conductor film 4 that the magnetoresistive effect sensor film is worked as sensor.
In addition, also be formed with the film formed top shielding films 5 of magnetic such as insulation such as aluminium oxide film formed top slit membrane (not shown), NiFe, writing head (ラ イ ト ヘ Star De) element successively with seam (not shown)., also form the writing head element that constitutes by upper magnetic film 6, coil 7, interlayer dielectric 8 etc. thereon,, no longer describe in detail here because this is general induction type thin film magnetic head element.At last, the diaphragm (not shown) that is formed for the terminal (not shown) of connecting conducting wire and is used for protecting component is finished the manufacturing process of wafer.
The following describes the method for making of draw runner.As mentioned above, adopt film to form technology and photoetching technique, on wafer, form multi-layer stacks and make element, afterwards, wafer is cut into the draw runner that a plurality of elements form a line.A plurality of magneto-resistance effect elements are towards same direction, and in addition, in fact the face (above floating) (exposing when becoming product face) that exposes that forms at last arranges in a line.Fig. 1 shows this state.Then, by the substrate that cuts into draw runner is carried out attrition process, grind the face that exposes face (be designated hereinafter simply as expose face grind) of the MR element that is equivalent to be formed at substrate, make the MR of each element highly become the value of regulation.
MR highly is in order to obtain the key factor of desired electrical characteristics, so need grasp actual components MR height separately.Yet as previously mentioned, owing to magnetic head that has multilayer to be used to write down on magnetoresistance effect film and diaphragm etc., thereby actual components MR height separately is difficult to measure with method of optics.Therefore, the MR of each MR magnetic head highly measures by MR magnetic head element resistance value.This principle will illustrate by Fig. 3.As shown in Figure 3, the resistance value R of magnetoresistive effect sensor film 3 is by sheet resistance r, the MR height H of magnetoresistive effect sensor film and be used for deciding to the interval W of the left and right sides of magnetoresistive effect sensor film supplying electric current electrode conductor film 4.The available following formula of this relation is represented
R＝r×w/H，
That is, as know the sheet resistance r of magnetoresistive effect sensor film 3 and the interval w of left and right sides electrode conductor film 4, then the resistance R of magnetoresistive effect sensor film and MR height H are inversely proportional to.Therefore, if can obtain R by measuring the component resistance value of MR magnetic head after attrition process, then the MR height H of MR magnetic head can be obtained by following formula
H＝r×w/R
In the structure of MR magnetic head, magnetoresistive effect sensor film 3, the pair of electrodes electrically conductive film 4 that links with it and terminal lead division are cascaded.Therefore, the component resistance value of MR magnetic head is represented by the resistance of magnetic effect sensor film 3, the resistance of electrode conductor film 4, the resistance of terminal lead division and the aggregate value of the contact resistance that their each contact site produces.Therefore, only measure the resistance of MR magnetic head, can not obtain the resistance value of magnetoresistive effect sensor film 3 itself, and the resistance that must revise electrode conductor film 4 and terminal lead division with and the contact resistance that produces of separately coupling part.Therefore, in the present invention, when on wafer, making the MR magnetic head element, on wafer, make at least a identical with the actual components structure and only change the element of MR height simultaneously, by the resistance value between the highly different element terminal of mensuration MR, thereby draw resistance value and MR relation highly, according to the relation of this resistance value and MR height, by the resistance value of exposing the MR magnetic head after face grinds, measure the MR height.
As mentioned above, the resistance value of MR magnetic head by the resistance of the resistance of the resistance of magnetoresistive effect sensor film 3, electrode conductor film 4, terminal lead division with and the aggregate value of the contact resistance that produces of each contact site represent.Therefore, the resistance that changes during as the MR height change is Rv, even the resistance that the MR height H changes not to be had to change yet is Rc, then the resistance R of MR magnetic head can be expressed from the next
In H=a * Rv/H+Rc formula, a is a constant.
Like this, the MR magnetic head resistance when highly being H1 as MR is R1, and the MR magnetic head resistance when MR highly is H2 is R2, then
R1＝a×Rv/H1＋Rc
Obtain after R2=a * Rv/H2+Rc arrangement
a×Rv＝(R1－R2)/(1/H1－1/H2)
Rc=(R1H1-R2H2)/(H1-H2) that is, according to the resistance value of at least 2 different elements of MR height H, then between the resistance value R of actual components and its MR height H, have following the relation
R=(R1-R2)/(1/H1-1/H2) * 1/H+ (R1H1=R2H2)/(H1-H2) can be expressed from the next after it is out of shape
H={ (R1-R2)/(1/H1-1/H2) }/{ R-(R1H1-R2H2)/(H1-H2) } therefore, by measure the resistance value R that exposes MR magnetic head after the face attrition process with this formula, can obtain the MR height H of this MR magnetic head.Because in fact the measuring accuracy of R and H has deviation, so preferably adopt the highly different element of MR more than 3 to obtain the relation of H and R.In addition, as have the highly different data of at least 3 MR, can confirm that then the MR height H of actual components and the relation of resistance value R have sufficient reliability.
Now turn back to the concrete configuration that Fig. 1 illustrates each element.In the figure, be provided with 3 kinds of element B1, B2, B3 that the MR height H has changed, as the element that is used for measuring resistance that has changed the MR height H, each MR highly is H1, H2, H3.Resistance value beyond the magnetoresistive effect sensor film 3 has the distribution that is formed by various factors in crystal face in the process of actual fabrication wafer.For example, the Size Distribution of the spaced apart and magnetoresistive effect sensor film 3 of the electrode conductor film 4 of the distribution of resistance that produces by the film thickness distribution of the film thickness distribution of each film that constitutes magnetoresistive effect sensor film 3 and electrode conductor film 4, element etc.Therefore, element B1 shown in Figure 1, element B2, the configuration of element B3 in each draw runner should make to distribute in these faces and not have influence on the mensuration precision of MR height.Measuring element B1, B2, B3 resistance value R separately in advance before exposing the face attrition process, thus put in order with the MR height H 1 of each element, the inverse of H2, H3, can obtain the relation of MR height H and component resistance R.At this moment,
H1＜H2＜H3
The target MR height H O that exposes MR magnetic head behind the face for final grinding, be roughly HO as HZ, then because the resistance value when measuring the MR height of actual components enters the scope center of the measured value of the resistance value R of element B1, element B2, each element of element B3 and MR height H, thereby can improve measuring accuracy.Here, changed the element of MR height, can be by optimizing the photomask size of copying pattern, the employing photoetching technique is carried out little processing to magnetoresistance effect film and is obtained.
For example, the desired value of exposing the MR height after face grinds is the occasion of 2.0 μ m, and the MR height H 1 of element B1 is 1.5 μ m, and the MR height H 2 of element B2 is 2.0 μ m, and is better when the MR height H 3 of element B3 is 2.5 μ m.Yet, when reality is made element, be for example H1=1.53 μ m, H2=2.02 μ m, H3=2.51 μ m.Even in this occasion, be roughly 2.0 μ m as H2, then can improve measuring accuracy, measure the MR height accurately.
Below above result is concluded.By measure respectively the MR magnetic head expose the face attrition process time or attrition process after the resistance value R of actual components A, can measure their MR height H accurately.In addition, owing on each draw runner, dispose the B element that resistance measurement is used, thereby can make the film thickness distribution etc. of each film that constitutes magnetoresistive effect sensor film 3 not influence the measuring accuracy of MR height, thereby make the measured value that exposes the MR height of each actual components A after the face attrition process of MR magnetic head have extreme high reliability.Below, select the actual components of desired resistance, cut into each element, make the MR magnetic head.
Processing shown in Fig. 1 detects and is utilized as following with element C.For example, before its resistance reaches a certain value, grind draw runner apace, afterwards, grind while then measure above-mentioned resistance value.
In addition, only measure the processing detection and grind draw runner with the resistance of element C, the MR of the element that is obtained highly also can be measured accurately by method same as described above.
＜embodiment 2 〉
Resistance measurement at embodiment 1 is used in the element, makes the big resistance measurement of target MR height H O of MR aspect ratio actual components use the actual components A on element B3 and the wafer common, makes the MR height H of actual components A consistent with the MR height H 3 of element B3.Like this, in the wafer fabrication process, can reduce the kind that element is used in the resistance measurement that has changed the MR height.That is, owing to can reduce the quantity of the element B that has changed the MR height H, so can increase the quantity of the actual components A that can be made on the draw runner.
＜embodiment 3 〉
Fig. 4 is the oblique view of the draw runner of other embodiments of the invention.The resistance measurement of this draw runner is as follows with the structure of element.Make resistance measurement identical substantially with the target MR height H O that exposes after face grinds of actual components A with the MR height H 2 of element B2.The MR height H 3 of element B3 is greater than MR height H 2, and the MR height H 4 of element B4 is bigger than this MR height H 3.
The measuring method of the MR height H of each element of when exposing the face grinding or grinding back is identical with embodiment 1.The feature of this mode is, resistance measurement is with element B3 and element B4 at least in element B1, B2, the B3, owing to constant fully with actual components after exposing the face attrition process, so can be used as the actual components of MR magnetic head.Therefore, be disposed in the element of draw runner, the parts number that can be used as the MR magnetic head can be more than embodiment 1.
＜embodiment 4 〉
Fig. 5 is the oblique view of the draw runner of other embodiment of the present invention.The resistance measurement of this draw runner is as follows with the structure of element.Make resistance measurement with the MR height H 2 of element B2 the target MR height H O after face grinds of exposing greater than actual components A.The MR height H 3 that makes element B3 is greater than MR height H 2, and the MR height H 4 that makes element B4 is greater than this MR height H 3.The MR height H measuring method of each element of when exposing the face grinding or grinding back is identical with embodiment 1.
According to present embodiment, resistance measurement has identical shape with element B2, B3, B4 with the MR magnetic head of being made by actual components A after exposing the face attrition process, so resistance measurement all can be used as the MR magnetic head with element, the element on the draw runner all can be used as the MR magnetic head.
In above embodiment 1～4, owing on a kind draw runner, dispose resistance measurement element B, so the resistance measurement resistance of element B.Can be after being cut into draw runner to exposing measured resistance value R during the face attrition process, serve as according to the relation of obtaining MR height H and component resistance value R with it, the component resistance value R by exposing the MR magnetic head after the face attrition process obtains the MR height H.
In addition, as method for distinguishing, much less also can adopt such method, i.e. resistance measurement is with the resistance value of element, measures in advance when finishing element on wafer cutting into before the draw runner.
In addition, the kind of resistance measurement element shows 3 kinds, but it is better that the highly different resistance measurement element of 2 kinds MR is set at least.Much less, also can adopt more than 3 kinds, for example also can use 5 kinds of resistance measurement elements that MR is highly different.In addition, no matter in what occasion, all available actual components is implemented a kind of of resistance measurement element.
＜embodiment 5 〉
In the foregoing description 1～4, show on each draw runner and must dispose the draw runner of resistance measurement with the structure of element, but in this example, be not on all draw runners, must dispose the resistance measurement element, but say the example that on wafer, disposes at certain intervals.
As mentioned above, the resistance value of MR magnetic head is by the resistance value of magnetoresistive effect sensor film 3, and the aggregate value of the resistance value of electrode conductor film 4, terminal lead division and they contact resistance series connection is separately tried to achieve.In wafer process, all to make the thickness of homogeneous in the face of wafer and form same size, this is impossible in the occasion of producing in enormous quantities, because each factor has the deviation of certain precision.Yet, even for example on the substrate of 125mm the resistance deviation in the face be ± 5%, the resistance deviation of point-to-point transmission of for example leaving 10mm in this face is for below ± 0.5%.Therefore, resistance measurement is not all to be necessary on all draw runners with element B, by on wafer, being configured, can represent the MR height H of its MR element nearby and the correlationship of component resistance value R by its resistance value with a certain intervals such as for example 10mm intervals.In this occasion, though can be in the resistance value of measuring as measuring resistance after the draw runner with element B, by comparison, when on wafer, finishing the MR element, then more easy on operation in measuring sensor resistance value on the wafer.
According to present embodiment, in wafer face, be used for the parts number of resistance measurement with element B, lack with element than configuration resistance measurement in all draw runners, so can be increased in the quantity of the actual components that can make in the wafer face.That is to say, as previously mentioned, when resistance measurement is set respectively in each draw runner with element B, a draw runner preferably is provided with 1～5 resistance measurement element B, therefore, when for example wafer being cut into 400 draw runners, each wafer need be provided with 400～2000 resistance measurement element B.When carrying out like that, because best each wafer is provided with the resistance measurement element B about 10～200, so can increase the number of actual components by present embodiment.
As described above, by adopting wafer of the present invention, obtain the relation between MR height and component resistance value, measure when exposing face and grinding or grind the resistance value of back actual components, can measure the MR height of actual components accurately.In addition, can only select to satisfy the magneto-resistance effect element of desirable electromagnetic conversion characteristic.
In addition, MR magnetic head manufacturing method of the present invention, owing to can correctly measure the MR height of actual components, so can only select to satisfy the element of desired electromagnetic conversion characteristic.Moreover MR magnetic head of the present invention can be made on high qualification rate ground.
Claims (17)
1. wafer, it is characterized in that: this wafer configuration has magneto-resistance effect element and at least 1 other magneto-resistance effect element, when the magnetoresistive effect sensor film of the vertical direction of the regenerative track Width of the magneto-resistance effect element of this at least one other magneto-resistance effect element on being formed at wafer is of a size of the MR height, have the MR height highly different with the MR of above-mentioned magneto-resistance effect element.
2. wafer as claimed in claim 1, it is characterized in that: above-mentioned magneto-resistance effect element constitutes a plurality of one group towards same direction and the element line that forms a line, this element line is located on the wafer with the form of multiple row, and at least 1 other above-mentioned magneto-resistance effect element of above-mentioned each element line setting.
3. wafer as claimed in claim 2 is characterized in that; Dispose above-mentioned other magneto-resistance effect element below 5 more than 1 at above-mentioned each element line.
4. wafer as claimed in claim 1 is characterized in that: dispose 2 MR different above-mentioned other magneto-resistance effect element highly mutually at least.
5. wafer as claimed in claim 4, it is characterized in that: after the magneto-resistance effect element on the wafer exposes face and grinds with respect to the exposing target size on the direction of lining and be decided to be the MR size sensor of magnetoresistive effect sensor film the time, at least 1 MR height that has greater than the MR sensor height of regulation of above-mentioned other magneto-resistance effect element.
6. wafer as claimed in claim 1, it is characterized in that: above-mentioned magneto-resistance effect element constitute with a plurality of be one group towards same direction and the element line that forms a line, classify 1 group as with the multiple row said elements and constitute the zone, be provided with a plurality of above-mentioned zones on above-mentioned wafer, above-mentioned other magneto-resistance effect element disposes 1 at least in above-mentioned each zone.
7. wafer as claimed in claim 6 is characterized in that: at above-mentioned each area configurations above-mentioned other magneto-resistance effect element below 5 more than 1.
8. the manufacture method of a magneto-resistive effect magnetic head, it is characterized in that: it may further comprise the steps:
Prepare the step of wafer, promptly on wafer, dispose magneto-resistance effect element and at least 1 other magneto-resistance effect element, when will be formed at magneto-resistance effect element on the wafer in the size of the magnetoresistive effect sensor film of the direction vertical during as the MR height with the regenerative track Width, this at least 1 other magneto-resistance effect element has the MR height highly different with the MR of above-mentioned magneto-resistance effect element;
Composed component row, in this element line above-mentioned magneto-resistance effect element with a plurality of be 1 group, be arranged into 1 row towards same direction;
This element line of multiple row is set;
Measure the step of the resistance value of the resistance value of above-mentioned magneto-resistance effect element and above-mentioned other magneto-resistance effect element;
The part that is formed with the said elements row of wafer is cut off the step that forms draw runner; And
Will with respect to grind magneto-resistance effect element on the above-mentioned draw runner expose magnetoresistive effect sensor film behind the face expose target size on the direction of lining as the MR sensor height time, resistance value according to the magneto-resistance effect element of the MR sensor height of determining by above-mentioned resistance value, grind the face that exposes of above-mentioned magneto-resistance effect element on the above-mentioned draw runner, its MR is highly become the step of above-mentioned MR sensor height.
9. the manufacture method of magneto-resistive effect magnetic head as claimed in claim 8 is characterized in that: 1 above-mentioned other magneto-resistance effect element of configuration on above-mentioned draw runner at least.
10. magneto-resistive effect magnetic head manufacture method as claimed in claim 9 is characterized in that, is disposing above-mentioned other magneto-resistance effect element below 5 more than 1 on the above-mentioned draw runner.
11. the manufacture method of magneto-resistive effect magnetic head as claimed in claim 8, it is characterized in that: said elements row multiple row is constituted the zone as 1 group, a plurality of above-mentioned zones are set on above-mentioned wafer, at least dispose 1 above-mentioned other magneto-resistance effect element in above-mentioned each zone, the grinding of exposing face of the above-mentioned magneto-resistance effect element on the above-mentioned draw runner is carried out according to the resistance value and the resistance value of the magneto-resistance effect element that highly is above-mentioned MR sensor height by the determined above-mentioned MR of the resistance value of above-mentioned other magneto-resistance effect element of the above-mentioned magneto-resistance effect element in the zone that comprises above-mentioned draw runner.
12. the manufacture method of magneto-resistive effect magnetic head as claimed in claim 11 is characterized in that: at above-mentioned each area configurations above-mentioned other magneto-resistance effect element below 5 more than 1.
13. the manufacture method of a magneto-resistive effect magnetic head is characterized in that it may further comprise the steps:
Prepare the step of wafer, promptly on wafer, show a plurality of element lines, the magneto-resistance effect element of this element line with a plurality of be 1 group, towards same direction and line up 1 row,
When the size that will be formed at the magnetoresistive effect sensor film on the wafer as MR when height, dispose at least 2 other magneto-resistance effect elements, these at least 2 other magneto-resistance effect elements have the MR height highly different and also different each other with the MR of above-mentioned magneto-resistance effect element;
Measure the step of the resistance value of above-mentioned at least 2 other magneto-resistance effect elements;
The part that is formed with the said elements row of cutting off above-mentioned wafer forms the step of draw runner; And
With the magnetoresistance sensing membrane after the exposing face and grind of the magneto-resistance effect element on the relative wafer expose target size on the direction of lining as the MR sensor height time, resistance value according to the magneto-resistance effect element of the MR sensor height of determining by above-mentioned resistance value, grind the face that exposes of above-mentioned magneto-resistance effect element on the above-mentioned draw runner, with the step of its MR height as the MR sensor height.
14. the manufacture method of magneto-resistive effect magnetic head as claimed in claim 13 is characterized in that: at least 2 above-mentioned other magneto-resistance effect elements of configuration on above-mentioned draw runner.
15. the manufacture method of magneto-resistive effect magnetic head as claimed in claim 14 is characterized in that: disposing above-mentioned other magneto-resistance effect element below 5 more than 2 on the above-mentioned draw runner.
16. the manufacture method of magneto-resistive effect magnetic head as claimed in claim 13, it is characterized in that: the multiple row with above-mentioned element line is 1 group of formation zone, a plurality of above-mentioned zones are set on above-mentioned wafer, at at least 2 above-mentioned other magneto-resistance effect elements of above-mentioned each area configurations, the grinding of exposing face of the above-mentioned magneto-resistance effect element on the above-mentioned draw runner is according to highly being carried out for the resistance value of the magneto-resistance effect element of above-mentioned MR sensor height by the above-mentioned MR of the resistance value decision of above-mentioned other magneto-resistance effect elements in the zone that comprises above-mentioned draw runner.
17. the manufacture method of magneto-resistive effect magnetic head as claimed in claim 16, its feature in: at above-mentioned each area configurations above-mentioned other magneto-resistance effect element below 5 more than 2.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7154211A JPH097121A (en) | 1995-06-21 | 1995-06-21 | Magnetoresistance type magnetic head and its production and wafer |
| JP154211/95 | 1995-06-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1146588A true CN1146588A (en) | 1997-04-02 |
Family
ID=15579279
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN96108377A Pending CN1146588A (en) | 1995-06-21 | 1996-06-20 | Making method for mangetic resistance effect type magnetic head and used crystal chip |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH097121A (en) |
| KR (1) | KR970002888A (en) |
| CN (1) | CN1146588A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100336104C (en) * | 2002-07-12 | 2007-09-05 | 新科实业有限公司 | Grinding guide with dual-purpose for producing magnetoresistive head |
| CN100440319C (en) * | 2005-01-31 | 2008-12-03 | 株式会社东芝 | Method of lapping row bar in which perpendicular magnetic heads are formed and lapping machine |
| US7712205B2 (en) | 2004-11-16 | 2010-05-11 | Sae Magnetics (H.K.) Ltd. | Method of manufacturing a magnetic head |
| CN1535796B (en) * | 2003-02-28 | 2010-09-22 | 日立环球储存科技荷兰有限公司 | Ion bombardment electric grinding indicator for reducing noise in course of grinding process |
| US8477461B2 (en) | 2008-07-29 | 2013-07-02 | Tdk Corporation | Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layers |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3439129B2 (en) * | 1998-08-25 | 2003-08-25 | 富士通株式会社 | Manufacturing method of magnetic head |
-
1995
- 1995-06-21 JP JP7154211A patent/JPH097121A/en active Pending
-
1996
- 1996-06-18 KR KR1019960021964A patent/KR970002888A/en not_active Application Discontinuation
- 1996-06-20 CN CN96108377A patent/CN1146588A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100336104C (en) * | 2002-07-12 | 2007-09-05 | 新科实业有限公司 | Grinding guide with dual-purpose for producing magnetoresistive head |
| CN1535796B (en) * | 2003-02-28 | 2010-09-22 | 日立环球储存科技荷兰有限公司 | Ion bombardment electric grinding indicator for reducing noise in course of grinding process |
| US7712205B2 (en) | 2004-11-16 | 2010-05-11 | Sae Magnetics (H.K.) Ltd. | Method of manufacturing a magnetic head |
| CN1801330B (en) * | 2004-11-16 | 2010-09-22 | 新科实业有限公司 | Magnetic head manufacturing method |
| CN100440319C (en) * | 2005-01-31 | 2008-12-03 | 株式会社东芝 | Method of lapping row bar in which perpendicular magnetic heads are formed and lapping machine |
| US8477461B2 (en) | 2008-07-29 | 2013-07-02 | Tdk Corporation | Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layers |
Also Published As
| Publication number | Publication date |
|---|---|
| KR970002888A (en) | 1997-01-28 |
| JPH097121A (en) | 1997-01-10 |
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