CN114649428B - Novel two-dimensional/three-dimensional heterogeneous high-speed photoelectric detector and preparation method thereof - Google Patents
Novel two-dimensional/three-dimensional heterogeneous high-speed photoelectric detector and preparation method thereof Download PDFInfo
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Abstract
A novel two-dimensional/three-dimensional heterogeneous high-speed photoelectric detector and a preparation method thereof are provided, the high-speed photoelectric detector comprises: the substrate is made of three-dimensional material silicon; a dielectric layer formed on the surface of the substrate; the active layer is made of two-dimensional material germanium selenide and is arranged on the adjacent area of the surface of the substrate and the surface of the dielectric layer; a source electrode disposed on adjacent regions of the active layer and the dielectric layer; and the drain electrode is arranged on the adjacent area of the active layer and the substrate. The detector combines germanium selenide with silicon, realizes the light detection range from a visible light region to a near infrared region, improves the response time of the photoelectric detector, and has the potential of becoming a wide-bandwidth photoelectric detector.
Description
Technical Field
The disclosure relates to the technical field of photoelectric detection, in particular to a novel two-dimensional/three-dimensional heterogeneous high-speed photoelectric detector.
Background
The two-dimensional semiconductor has the characteristics of adjustable energy band, good flexibility, integration compatibility and strong coupling with light, and plays an increasingly important role in modern nanoelectronics and optoelectronics. To date, a large number of hybrid one-dimensional/two-dimensional, two-dimensional/two-dimensional, and two-dimensional/three-dimensional heterogeneous photodetectors have been successfully fabricated, wherein the two-dimensional/three-dimensional heterogeneous photodetectors have unique advantages of low dark current, high signal-to-noise ratio, low power consumption, and fast response.
On one hand, the two-dimensional/three-dimensional heterogeneous junction has stronger light absorption capacity than the one-dimensional (two-dimensional)/two-dimensional heterogeneous junction, and lays a solid foundation for generating photo-carriers. On the other hand, two-dimensional/three-dimensional heterojunction photodetectors can easily transfer-integrate two-dimensional materials onto mature commercial substrates such as silicon and graphene. When light is incident to the two-dimensional/three-dimensional heterojunction photoelectric detector, the light excites carriers to cause the conductivity of the detector to change, and therefore optical signals are converted into electric signals. Because the surface of the two-dimensional material has no dangling bond, the two-dimensional material can be combined with a bulk material with lattice mismatch, the thickness of the two-dimensional material is very thin, and the diffusion time of a current carrier in the two-dimensional material is reduced, so that the response speed of the photoelectric detector is effectively improved. The two-dimensional/three-dimensional heterojunction photoelectric detector can play an important role in the field of high-speed detectors.
Disclosure of Invention
The invention provides a novel two-dimensional/three-dimensional heterogeneous high-speed photoelectric detector and a preparation method thereof.
One aspect of the present disclosure provides a novel two-dimensional/three-dimensional heterogeneous high-speed photodetector, including: the substrate is made of three-dimensional material silicon; a dielectric layer formed on the substrate surface; the active layer is made of two-dimensional material germanium selenide and is arranged on the adjacent areas of the surface of the substrate and the surface of the dielectric layer; a source electrode disposed on adjacent regions of the active layer and the dielectric layer; and the drain electrode is arranged on the adjacent area of the active layer and the substrate.
Optionally, the material of the source electrode and the drain electrode is gold.
Optionally, the dielectric layer is made of SU-8 photoresist.
Optionally, the detection bands of the high-speed photodetector include a visible light band and a near infrared band.
Another aspect of the present disclosure provides a method for preparing a novel two-dimensional/three-dimensional heterogeneous high-speed photodetector, including: spin-coating a mask on a substrate, wherein the substrate is made of three-dimensional material silicon; photoetching a dielectric layer layout on the mask to form a dielectric layer; cleaning the mask; transferring a pre-prepared active layer onto the substrate and an adjacent area on the surface of the dielectric layer, wherein the active layer is made of a two-dimensional material of germanium selenide; depositing and etching a source electrode between the active layer and the dielectric layer, and depositing and etching a drain electrode between the active layer and the substrate; and packaging the integral structure formed by the substrate, the dielectric layer, the active layer, the source electrode and the drain electrode to obtain the high-light-speed photoelectric detector.
Optionally, the dielectric layer is made of SU-8 photoresist, and the cleaning the mask includes: and cleaning the residual photoresist on the mask by using propylene glycol methyl ether acetate.
Optionally, the transferring the pre-prepared active layer onto the substrate and the adjacent area of the surface of the dielectric layer comprises: and peeling off the pre-prepared active layer by using a dimethyl siloxane transfer adhesive tape through a two-dimensional material transfer platform, and transferring the active layer onto the adjacent areas of the surfaces of the substrate and the dielectric layer.
Optionally, the depositing and etching a source electrode between the active layer and the dielectric layer, and the depositing and etching a drain electrode between the active layer and the substrate includes: depositing the manufacturing materials of the source electrode and the drain electrode; spin-coating an electrode mask on the source electrode and drain electrode manufacturing materials; etching an electrode layout on the electrode mask to etch the source electrode and the drain electrode; and cleaning the electrode mask.
Optionally, the electrode mask material is polymethyl methacrylate, and the cleaning the electrode mask includes: and cleaning the electrode mask by using acetone, ethanol and deionized water in sequence.
The at least one technical scheme adopted in the embodiment of the disclosure can achieve the following beneficial effects:
according to the novel two-dimensional/three-dimensional heterogeneous high-speed photoelectric detector provided by the embodiment of the disclosure, germanium selenide (GeSe) is used as a P-type semiconductor and forms a heterojunction with N-type semiconductor silicon (Si) to form a space charge region; geSe is used as a two-dimensional active layer, the thickness is small, and the diffusion time of a current carrier in the layer is obviously reduced, so that the response speed of the photoelectric detector is improved; si and GeSe can be applied to spectrum detection from a visible region to a near infrared region.
Drawings
For a more complete understanding of the present disclosure and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
fig. 1 schematically illustrates a schematic plane structure diagram of a novel two-dimensional/three-dimensional heterogeneous high-speed photodetector provided by an embodiment of the present disclosure;
FIG. 2 is a schematic cross-sectional view of a novel two-dimensional/three-dimensional heterogeneous high-speed photodetector provided by an embodiment of the present disclosure;
fig. 3 is a schematic energy band structure diagram of a two-dimensional/three-dimensional heterogeneous high-speed photodetector provided by an embodiment of the present disclosure;
description of reference numerals:
11-a silicon wafer substrate; 12-a source electrode; 13-a drain electrode; 14-a dielectric layer; a 15-germanium selenide active layer.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is illustrative only and is not intended to limit the scope of the present disclosure. In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the disclosure. It may be evident, however, that one or more embodiments may be practiced without these specific details. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. The terms "comprises," "comprising," and the like, as used herein, specify the presence of stated features, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, or components.
All terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art unless otherwise defined. It is noted that the terms used herein should be interpreted as having a meaning that is consistent with the context of this specification and should not be interpreted in an idealized or overly formal sense.
As shown in fig. 1 and fig. 2, the present disclosure provides a novel two-dimensional/three-dimensional heterogeneous high-speed photodetector, including: the substrate, the dielectric layer, the active layer, the source electrode, the drain electrode. Wherein the substrate material is three-dimensional material silicon; a dielectric layer formed on the substrate surface; the active layer material is a two-dimensional material germanium selenide and is arranged on the adjacent areas of the surface of the substrate and the surface of the dielectric layer; the source electrode is arranged on the adjacent areas of the active layer and the dielectric layer; the drain electrode is arranged on the active layer and the adjacent area of the substrate.
Optionally, the material of the source electrode and the drain electrode is gold.
Optionally, the dielectric layer is made of SU-8 photoresist.
GeSe is a two-dimensional P-type semiconductor material and has the characteristics of good flexibility, high detectivity and the like; si is a conventional three-dimensional N-type semiconductor material. Germanium selenide (GeSe) used as an active layer is stacked in a layered mode along an a axis, the surface of a nanosheet is a b-c surface, and the nanosheet belongs to an orthorhombic structure with a space group of Pnma; the photoresponse range of the semiconductor material germanium selenide (GeSe) comprises the whole visible light and near infrared light domains, and after the semiconductor material germanium selenide (GeSe) is combined with silicon (Si), the detection waveband of the high-speed photoelectric detector comprises a visible light waveband and a near infrared waveband.
Fig. 3 shows a schematic energy band structure diagram of a two-dimensional/three-dimensional heterogeneous high-speed photodetector provided by an embodiment of the present disclosure. The novel two-dimensional/three-dimensional heterogeneous high-speed photodetector provided by the embodiment combines GeSe and Si to form a heterojunction and a space charge region inside the heterojunction. Light irradiates on the PN junction to generate light carriers, and under the action of external bias, electrons and holes respectively move to the source electrode and the drain electrode to form current, so that an optical signal is converted into an electric signal. The response time of the detector comprises the drift time of a current carrier in a space charge region and the diffusion time of the current carrier in the germanium selenide and the silicon layer, and the diffusion time of the current carrier in the germanium selenide layer is obviously reduced due to the fact that the germanium selenide is used as a two-dimensional material and is thin, and therefore the response speed of the GeSe/Si heterogeneous photoelectric detector is improved.
Another embodiment of the present disclosure provides a method for manufacturing a novel two-dimensional/three-dimensional heterogeneous high-speed photodetector, including operations S1 to S6.
In operation S1, a mask is spin-coated on a substrate, which is made of a three-dimensional material silicon.
In operation S2, a dielectric layer layout is etched on the mask to form a dielectric layer.
In this embodiment, SU-8 photoresist can be selected as the mask material for forming the dielectric layer.
In operation S3, the mask is cleaned.
In this embodiment, the remaining photoresist on the mask may be cleaned using propylene glycol methyl ether acetate.
In operation S4, a pre-fabricated active layer is transferred to an adjacent region of the substrate and the surface of the dielectric layer, where the active layer is made of a two-dimensional material of germanium selenide.
In this example, a pre-prepared active layer may be transferred to the substrate and adjacent regions of the dielectric layer surface by peeling the active layer off with a dimethyl siloxane transfer tape through a two-dimensional material transfer platform.
In operation S5, a source electrode is deposited and etched between the active layer and the dielectric layer, and a drain electrode is deposited and etched between the active layer and the substrate.
Operation S5 specifically includes S501 to S504.
In operation S501, the source electrode and drain electrode manufacturing material is deposited.
In operation S502, an electrode mask is spin-coated on the source and drain electrode formation material.
In operation S503, an electrode layout is etched on the electrode mask, and the source electrode and the drain electrode are etched.
In operation S504, the electrode mask is cleaned.
Alternatively, the electrode mask may be sequentially cleaned using acetone, ethanol, and deionized water.
And in operation S6, encapsulating the integrated structure formed by the substrate, the dielectric layer, the active layer, the source electrode, and the drain electrode to obtain the high-light-speed photodetector.
It will be appreciated by a person skilled in the art that various combinations or/and combinations of features recited in the various embodiments of the disclosure and/or in the claims may be made, even if such combinations or combinations are not explicitly recited in the disclosure. In particular, various combinations and/or combinations of the features recited in the various embodiments of the present disclosure and/or the claims may be made without departing from the spirit and teachings of the present disclosure. All such combinations and/or associations are within the scope of the present disclosure.
While the disclosure has been shown and described with reference to certain exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the disclosure as defined by the appended claims and their equivalents. Accordingly, the scope of the present disclosure should not be limited to the above-described embodiments, but should be defined not only by the appended claims, but also by equivalents thereof.
Claims (3)
1. A two-dimensional/three-dimensional heterogeneous high-speed photodetector, comprising:
the substrate is made of three-dimensional material silicon;
a dielectric layer formed on the substrate surface;
the active layer is made of two-dimensional material germanium selenide and is arranged on the adjacent areas of the surface of the substrate and the surface of the dielectric layer;
a source electrode disposed on an adjacent region of the active layer and the dielectric layer;
a drain electrode disposed on an adjacent region of the active layer and the substrate;
wherein, the silicon and the germanium selenide are combined to form a heterojunction and form a space charge region inside, and the response time of the high-speed photoelectric detector comprises the drift time of carriers in the space charge region and the diffusion time of carriers in the germanium selenide and the silicon layer;
the detection wave bands of the high-speed photoelectric detector comprise a visible light wave band and a near infrared wave band;
the dielectric layer is made of SU-8 photoresist.
2. A high-speed photodetector according to claim 1, characterized in that the material of the source and drain electrodes is gold.
3. A method for manufacturing a two-dimensional/three-dimensional heterogeneous high-speed photodetector, which is applied to the two-dimensional/three-dimensional heterogeneous high-speed photodetector of any one of claims 1 to 2, comprising:
spin-coating a mask on a substrate, wherein the substrate is made of three-dimensional material silicon;
photoetching a dielectric layer layout on the mask to form a dielectric layer;
cleaning the mask;
transferring a pre-prepared active layer onto the substrate and an adjacent area on the surface of the dielectric layer, wherein the active layer is made of a two-dimensional material of germanium selenide;
depositing and etching a source electrode between the active layer and the dielectric layer, and depositing and etching a drain electrode between the active layer and the substrate;
packaging the substrate, the dielectric layer, the active layer, the source electrode and the drain electrode to form an integral structure to obtain the high-light-speed photoelectric detector;
the cleaning the mask includes:
cleaning the residual photoresist on the mask by using propylene glycol methyl ether acetate;
the transferring of the pre-fabricated active layer onto adjacent areas of the substrate and the surface of the dielectric layer comprises:
peeling off a pre-prepared active layer by using a dimethyl siloxane transfer adhesive tape through a two-dimensional material transfer platform, and transferring the active layer onto the substrate and the adjacent area of the surface of the dielectric layer;
the depositing and etching of the source electrode between the active layer and the dielectric layer and the depositing and etching of the drain electrode between the active layer and the substrate comprises:
depositing the manufacturing materials of the source electrode and the drain electrode;
spin-coating electrode masks on the source electrode and drain electrode manufacturing materials;
etching an electrode layout on the electrode mask to etch the source electrode and the drain electrode;
cleaning the electrode mask;
the electrode mask material is polymethyl methacrylate, and the cleaning of the electrode mask comprises:
and cleaning the electrode mask by using acetone, ethanol and deionized water in sequence.
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| GB9119200D0 (en) * | 1991-02-22 | 2000-08-23 | Ltv Aerospace & Defence | Bandgap radiation detector and method of fabrication |
| CN107394001A (en) * | 2017-06-09 | 2017-11-24 | 北京交通大学 | A kind of miniature ultra wide band photo-detector based on graphene and preparation method thereof |
| CN111739964A (en) * | 2020-06-29 | 2020-10-02 | 西北工业大学 | Two-dimensional semiconductor photoelectric detector with double-gate structure and preparation method thereof |
| CN112447869A (en) * | 2019-08-28 | 2021-03-05 | 中国科学院苏州纳米技术与纳米仿生研究所 | Double-color photoelectric detector and preparation method thereof |
| CN113823702A (en) * | 2021-09-26 | 2021-12-21 | 中国科学院上海技术物理研究所 | Mixed-dimension van der Waals heterojunction room-temperature two-color infrared detector and preparation method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109742178B (en) * | 2019-01-29 | 2020-07-17 | 西安工业大学 | Infrared-transmitting high-sensitivity visible light detector and preparation method thereof |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9119200D0 (en) * | 1991-02-22 | 2000-08-23 | Ltv Aerospace & Defence | Bandgap radiation detector and method of fabrication |
| CN107394001A (en) * | 2017-06-09 | 2017-11-24 | 北京交通大学 | A kind of miniature ultra wide band photo-detector based on graphene and preparation method thereof |
| CN112447869A (en) * | 2019-08-28 | 2021-03-05 | 中国科学院苏州纳米技术与纳米仿生研究所 | Double-color photoelectric detector and preparation method thereof |
| CN111739964A (en) * | 2020-06-29 | 2020-10-02 | 西北工业大学 | Two-dimensional semiconductor photoelectric detector with double-gate structure and preparation method thereof |
| CN113823702A (en) * | 2021-09-26 | 2021-12-21 | 中国科学院上海技术物理研究所 | Mixed-dimension van der Waals heterojunction room-temperature two-color infrared detector and preparation method thereof |
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