CN114649243A - Wafer bonding device and wafer bonding method - Google Patents

Wafer bonding device and wafer bonding method Download PDF

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Publication number
CN114649243A
CN114649243A CN202210260497.5A CN202210260497A CN114649243A CN 114649243 A CN114649243 A CN 114649243A CN 202210260497 A CN202210260497 A CN 202210260497A CN 114649243 A CN114649243 A CN 114649243A
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CN
China
Prior art keywords
wafer
bonding
wafer mounting
driving
mounting
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Pending
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CN202210260497.5A
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Chinese (zh)
Inventor
汪良
蔡文必
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Fujian Norstel Material Technologies Co ltd
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Fujian Norstel Material Technologies Co ltd
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Priority to CN202210260497.5A priority Critical patent/CN114649243A/en
Publication of CN114649243A publication Critical patent/CN114649243A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Abstract

The embodiment of the invention provides a wafer bonding device and a wafer bonding method, and relates to the technical field of semiconductors. According to the wafer bonding method, the wafer is bonded to the wafer mounting platform through the wafer bonding device, so that the wafer bonding is firmer, and the bonding quality of the wafer tends to be uniform. The adhesive can also ensure that the operators can avoid excessive contact with the adhesive containing chemical components harmful to human bodies in the operation process, and the health of the human bodies is protected to a certain extent.

Description

Wafer bonding device and wafer bonding method
Technical Field
The invention relates to the technical field of semiconductors, in particular to a wafer bonding device and a wafer bonding method.
Background
During the growth of SiC crystal by physical vapor transport method and during the processing of SiC crystal, the wafer is mounted and fixed. At present, the wafer is adhered mainly by manually adopting a mode of scraping and coating an adhesive by a blade, the adhesive is coated on the wafer and the wafer mounting seat, and then the wafer and the wafer mounting seat are adhered together, but the coating uniformity of the adhesive and the firmness of adhesion are difficult to guarantee.
Disclosure of Invention
The invention aims to provide a wafer bonding device and a wafer bonding method, wherein a wafer can be bonded on a wafer mounting seat through the wafer bonding device, a first wafer mounting device and a rotary heating platform can rotate, namely, the first wafer mounting device and the rotary heating platform rotate when an adhesive is coated, the adhesive is more uniformly coated under the action of centrifugal force, the firmness of adhesive coating is better ensured, the wafer bonding method bonds the wafer on the wafer mounting seat through the wafer bonding device, the quality of wafer bonding tends to be uniform, and the condition that the adhesive is not uniformly coated in the operation process of personnel is avoided.
Embodiments of the invention may be implemented as follows:
in a first aspect, the present invention provides a wafer bonding apparatus for bonding a wafer to a wafer mounting base, comprising:
the first wafer mounting device comprises a first mounting frame and a first suction piece which is rotatably arranged on the first mounting frame, wherein the first suction piece is used for sucking the bonding layer;
the second wafer mounting device comprises a second mounting frame and a second adsorption piece arranged on the second mounting frame, and the second adsorption piece is used for adsorbing the wafer;
the rotary heating platform comprises a rotating part and a heating part which are connected, the heating part is used for heating the rotating part, and the rotating part is used for fixing the wafer mounting seat and driving the wafer mounting seat to rotate.
And the driving device is used for driving the second wafer mounting device to be close to or far away from the first wafer mounting device so as to enable the wafer to be bonded to the bonding layer to form a wafer bonding body, or the driving device is used for driving the second wafer mounting device to be close to or far away from the rotary heating platform so as to enable the wafer bonding body to be bonded to the wafer mounting seat.
In a second aspect, the present invention provides a wafer bonding method, based on the above wafer bonding apparatus, including:
mounting the bonding layer on the first wafer mounting device, rotating the first suction attachment at a first preset speed within a preset time, and then coating an adhesive on one side of the bonding layer, which is far away from the first wafer mounting device, through a glue injection device;
mounting the wafer on the second wafer mounting device;
driving the second wafer mounting device to be close to the first wafer mounting device through the driving device, and bonding the wafer to the bonding layer to form a wafer bonding body;
and driving the second wafer mounting device to be close to the rotary heating platform through the driving device, and bonding the wafer bonding body to the wafer mounting seat.
The beneficial effects of the embodiment of the invention include, for example: the embodiment of the invention provides a wafer bonding method and a wafer bonding device, wherein when an adhesive is coated, a first wafer mounting device, a second wafer mounting device and a rotary heating platform rotate, the adhesive is coated more uniformly under the centrifugal action, the firmness of the adhesive coating is better ensured, the wafer bonding device is used for bonding wafers by adopting a wafer bonding method, the bonding quality of the wafers can be ensured to be uniform, and the bonding quality of the wafers is prevented from being uneven.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a schematic structural diagram of a wafer bonding apparatus according to a first embodiment of the present invention;
fig. 2 is a schematic flow chart illustrating a wafer bonding method according to a second embodiment of the present invention;
FIG. 3 is a schematic view of a second embodiment of the present invention for applying an adhesive to an adhesive layer;
FIG. 4 is a schematic view of the bonding layer and the wafer aligned by the first and second wafer mounting devices according to the second embodiment of the present invention;
FIG. 5 is a schematic view of a bonding layer bonded to a wafer according to a second embodiment of the present invention;
FIG. 6 is a schematic view of a bonding layer and a wafer after bonding according to a second embodiment of the present invention;
FIG. 7 is a schematic view of a second embodiment of the present invention for applying adhesive to a wafer mounting socket;
FIG. 8 is a schematic view of a wafer bonding body bonded to a wafer mounting base according to a second embodiment of the present invention;
fig. 9 is a schematic view illustrating a second embodiment of the present invention when the bonding between the wafer and the wafer mounting seat is completed.
Icon: 1000-wafer bonding means; 100-a first wafer mount device; 110-a first porous chuck; 120-a first heating element; 130-a first vacuum port; 140-an adhesive layer; 150-a first mount; 200-a second wafer mounting device; 210-a second porous chuck; 220-a second heating element; 230-a second vacuum port; 240-wafer; 250-a second mounting frame; 300-a wafer mount; 400-spraying the rubber tube; 410-glue spraying opening; 500-rotating the heated platen.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it should be noted that if the terms "upper", "lower", "inside", "outside", etc. indicate an orientation or a positional relationship based on that shown in the drawings or that the product of the present invention is used as it is, this is only for convenience of description and simplification of the description, and it does not indicate or imply that the device or the element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present invention.
Furthermore, the appearances of the terms "first," "second," and the like, if any, are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
It should be noted that the features of the embodiments of the present invention may be combined with each other without conflict.
The first embodiment:
referring to fig. 1, the present embodiment provides a wafer bonding apparatus 1000 for bonding a wafer 240 to a wafer mounting base 300, comprising a first wafer mounting apparatus 100, a second wafer mounting apparatus 200, a rotary heating platform 500 and a driving apparatus (not shown in the drawings), wherein the driving apparatus, the first wafer mounting apparatus 100 and the second wafer mounting apparatus 200 are used together for bonding the wafer 240 to the wafer mounting base 300.
In detail, in the embodiment, the first wafer mounting apparatus 100 includes a first mounting frame 150 and a first suction device rotatably disposed on the first mounting frame 150, the first suction device is used for sucking the adhesive layer 140, a first vacuum port 130 is further opened on a side of the first mounting frame 150 away from the first suction device, and the first vacuum port is used for connecting a first vacuum generator, so that the first suction device generates an absorption force to suck the adhesive layer 140. Specifically, in the embodiment, the first suction device is a first porous suction cup 110 having a plurality of holes, the first wafer mounting apparatus 100 further includes a first heating member 120, the first heating member 120 is used for heating the first suction device, specifically, the first porous suction cup 110 has a first surface and a second surface opposite to each other, the first surface is used for adsorbing the adhesive layer 140, and the second surface is connected to the first heating member 120.
The second wafer mounting apparatus 200 includes a second mounting frame 250 and a second adsorption member disposed on the second mounting frame 250, the second adsorption member is used for adsorbing the wafer 240, the second mounting frame 250 is further provided with a second vacuum port 230, and the second vacuum port 230 is used for connecting a second vacuum generator, so that the second adsorption member generates an adsorption force to adsorb the wafer 240. Specifically, in this embodiment, the second suction member is a second porous suction cup 210 having a plurality of holes, the second wafer mounting apparatus 200 further includes a second heating member 220, the second porous suction cup 210 has a third surface and a fourth surface opposite to each other, the third surface is used for sucking the wafer 240, and the fourth surface is connected to the second heating member 220.
The rotary heating platform 500 includes a rotating portion and a heating portion connected to each other, the heating portion (not shown in the drawings) is used for heating the rotating portion (not shown in the drawings) which is used for fixing the wafer mounting base 300 and driving the wafer mounting base 300 to rotate, specifically, the rotating portion is provided with a mounting portion for fixing the wafer mounting base 300, it should be noted that, the specific shapes of the heating part, the rotating part and the mounting part are not particularly limited, and when the wafer mounting stage 300 is mounted on the rotary heating stage 500 through the mounting part, after the rotation part transmits the rotation, the wafer mounting base 300 can be driven to rotate, that is, when the wafer mounting base 300 is mounted on the rotary heating platform, when coating the adhesive to the one side of wafer mount pad 300 far away from the rotary heating platform, wafer mount pad 300 can take place to rotate under the drive of rotation portion, and then can make the adhesive coating more even under the effect of centrifugal force.
In this embodiment, the wafer bonding apparatus 1000 further includes a frame (not shown in the drawings), and the frame includes a first mounting platform for mounting the first wafer mounting apparatus 100 and a second mounting platform for mounting the second wafer mounting apparatus 200, and the second mounting platform is located above the first mounting platform.
The driving device is used for driving the second wafer mounting device 200 to approach or depart from the first wafer mounting device 100 so as to enable the wafer 240 to be bonded on the bonding layer 140 to form a wafer bonding body, or the driving device is used for driving the second wafer mounting device 200 to approach or depart from the rotary heating platform 500 so as to enable the wafer bonding body to be bonded on the wafer mounting seat 300. Specifically, when the driving device drives the second wafer mounting device 200, to which the wafer 240 is adsorbed, to approach the first wafer mounting device 100, to which the adhesive layer 140 is adsorbed, and the adhesive layer 140 is coated with the adhesive until the wafer 240 is pressed to the adhesive layer 140, and a wafer adhesive body is obtained after the bonding of the wafer 240 and the adhesive layer 140 is completed, the driving device drives the second wafer mounting device 200 to ascend to be away from the first wafer mounting device 100, and at this time, the second wafer mounting device 200 adsorbs the wafer adhesive body. And then the driving means drives the second wafer mounting apparatus 200 adsorbed with the wafer adhesive body to approach the rotary heating platform 500 mounted with the wafer mounting base 300, and the wafer mounting base 300 is coated with the adhesive until the adhesive layer 140 in the wafer adhesive body is pressed on the wafer mounting base 300, after the wafer adhesive body is adhered with the wafer mounting base 300, the adsorption force of the second adsorption member in the second wafer mounting apparatus 200 is closed, and the driving means drives the second wafer mounting apparatus 200 to rise to be away from the rotary heating platform 500.
Specifically, in the present embodiment, the driving device includes an X-direction moving pair for moving the second wafer mounting device 200 in the X direction and a Z-direction moving pair for moving the second wafer mounting device 200 in the Z direction.
For example, since the second wafer mounting device 200 is located above the first wafer mounting device, when the wafer 240 is bonded to the bonding layer 140, it is necessary to make the axis of the first wafer mounting device and the axis of the second wafer mounting device on the same axis, and make the axis of the wafer 240 and the axis of the bonding layer 140 on the same axis, so that the driving device needs to make the second wafer mounting device 200 move in the X direction by the X-direction moving pair, so that the axis of the wafer 240 and the axis of the bonding layer 140 are on the same axis, and after the axis of the wafer 240 and the axis of the bonding layer 140 are on the same axis, the driving device drives the second wafer mounting device 200 to move in the Z direction by the Z-direction moving pair, so that the second wafer mounting device 200 with the wafer 240 adsorbed thereon is pressed against the first wafer mounting device 100 with the bonding layer 140 adsorbed thereon, so that the wafer 240 is bonded to the bonding layer 140 to obtain a wafer bonded body, the driving means moves the second wafer mounting apparatus 200, to which the wafer adhesive is attached, in the Z direction by the Z direction moving pair, so that the second wafer mounting apparatus 200 is raised to be away from the first wafer mounting apparatus 100, and the wafer adhesive is bonded to the wafer mounting base 300 in the same manner.
It can be understood that when the adhesive is applied, the first porous chuck 110 of the first wafer mounting device rotates, so that the adhesive is more uniformly applied by the centrifugal force, and the firmness of the adhesive application is better ensured. When used for bonding of the wafer 240, the first wafer mounting device 100 and the second wafer mounting device 200 are used only for bonding of different objects, for example, the first wafer mounting device 100 is used to suck the adhesive layer 140 through the first porous chuck 110, and the second wafer mounting device 200 is used to suck the wafer 240 through the second porous chuck 210. The first vacuum generator and the second vacuum generator may be one vacuum generating device or different vacuum generating devices, and are not limited herein.
In summary, the wafer 240 is bonded to the wafer mounting base 300 by the wafer bonding apparatus 1000, and when the adhesive is applied, the first wafer mounting apparatus, the second wafer mounting apparatus and the rotary heating platform rotate, so that the adhesive is applied more uniformly by using the centrifugal force, and the firmness of the adhesive application is better ensured. The adhesive can prevent operators from contacting the adhesive which is harmful to human bodies too much, can protect the health of operators, and can ensure that the bonding quality of the wafers 240 tends to be uniform by using the device to bond the wafers 240, thereby preventing the bonding quality of the wafers 240 from being uneven.
Since the wafer is bonded to the crucible cover, the wafer holder 300 to which the wafer 240 is bonded is the crucible cover in this embodiment.
Second embodiment:
referring to fig. 2, the present embodiment provides a wafer bonding method based on a wafer bonding apparatus 1000.
S1: mounting adhesive layer 140
Specifically, referring to fig. 3, the glue injection device (not shown in the figure) is connected to a glue injection tube 400, and applies the adhesive to the side of the bonding layer 140 away from the first wafer mounting device 100 through a glue injection port 410 of the glue injection tube 400, where the glue injection device may be a glue injection pump, and the amount of the adhesive applied to the bonding layer 140 by the glue injection tube is quantitatively controlled through the glue injection pump.
Specifically, in the present embodiment, the mounting of the adhesive layer 140 and the first wafer mounting apparatus 100 specifically includes first connecting the first vacuum port 130 to a first vacuum generator (not shown in the drawings), placing the adhesive layer 140 on the first porous chuck 110 and turning on the first vacuum generator to make the first suction device suck the adhesive layer 140, specifically, to make the first wafer mounting apparatus 100 generate a negative pressure and suck the adhesive layer 140 through the first porous chuck 110. Spout glue pipe 400 one end and be connected with the injecting glue device, spout the one end that glue pipe 400 kept away from the injecting glue device, spout glue mouth 410 promptly and be used for spouting the adhesive, and then open the injecting glue device, through the amount of injecting glue device regulation glue mouth 410 spout adhesive on the bond line 140, when spouting the adhesive, rotate first porous sucking disc 110 with first predetermined speed in the predetermined time, and set up the first predetermined time of first wafer installation device 100 rotation.
It can be understood that, when the adhesive is sprayed on the adhesive layer 140 by the glue injection device, the first porous suction cup 110 rotates at an actual required speed, and simultaneously drives the adhesive layer 140 to rotate, so that the adhesive on the adhesive layer 140 is more uniform under the action of centrifugal force.
S2: mounting wafer 240
Further, the wafer 240 is mounted on the second wafer mounting apparatus 200, and specifically, the second vacuum port 230 is connected to a second vacuum generator, the wafer 240 is placed on the second porous chuck 210, and the second vacuum generator is turned on, so that a negative pressure is generated in the second wafer mounting apparatus 200, and the wafer 240 is adsorbed by the second porous chuck 210.
S3: bonding wafer 240 to adhesive layer 140
Specifically, referring to fig. 4-6, after the wafer 240 and the bonding layer 140 are mounted, the driving device drives the second wafer mounting device 200 to approach the first wafer mounting device 100, and before the step of bonding the wafer 240 to the bonding layer 140 to form a wafer bonded body, the second wafer mounting device 200 needs to be driven to move to a position right above the first wafer mounting device 100 by the X-direction moving pair of the driving device, and the axes of the first porous chuck 110 and the second porous chuck 210 are arranged on the same axis, which can be understood as the axis of the wafer 240 and the axis of the bonding layer 140 are also on the same axis. With the above arrangement, when the wafer 240 is bonded to the adhesive layer 140, it can be ensured that the center of the wafer 240 is arranged corresponding to the center of the adhesive layer 140, i.e., the center of the wafer 240 is located on the center of the adhesive layer 140.
In the present embodiment, the step of bonding the wafer 240 to the adhesive layer 140 to form a wafer bond by driving the second wafer mounting apparatus 200 close to the first wafer mounting apparatus 100 by the driving means comprises:
first, the second wafer mounting device 200 is driven to descend by the Z-direction moving pair of the driving device so that the wafer 240 is attached to the adhesive layer 140 to form a wafer adhesive body, a first pressing pressure of the driving device against the second wafer mounting device 200 is set, a first pressure holding time is set, and the first suction member and the second suction member are simultaneously heated and a heating time is set, specifically, the first heating time is set by simultaneously heating the first heating member 120 and the second heating member 220. In detail, in the present embodiment, the second wafer mounting device 200 sets a required pressing pressure according to actual needs so that the wafer 240 is bonded to the bonding layer 140 through the adhesive on the bonding layer 140, and the second wafer mounting device 200 is pressed onto the first wafer mounting device 100 for a period of time under the required pressing pressure, and heats the first heating member 120 and the second heating member 220, so that the adhesive on the bonding layer 140 can be melted, the wafer 240 and the bonding layer 140 can be smoothly bonded, and the required heating time is set according to the dosage of the adhesive on the bonding layer 140, so that the adhesive can satisfy the requirement that the wafer 240 and the bonding layer 140 can be smoothly bonded.
Further, after the wafer 240 and the adhesive layer 140 are smoothly bonded, the first vacuum generator is turned off to make the inside of the first porous chuck 110 be in a normal pressure state, and after the pressure holding time elapses, the driving device releases the first pressing pressure to the second wafer mounting device 200, and the second wafer mounting device 200 is lifted up by the Z-direction moving pair of the driving device. Specifically, after the bonding of the wafer 240 and the bonding layer 140 is completed, the first vacuum generator is turned off to make the pressure inside the first wafer mounting device 100 in a normal pressure state, contact the suction state of the first suction device and the bonding layer 140 and maintain the suction state of the second suction device and the wafer 240, that is, the bonding layer 140 is no longer sucked on the first porous chuck 110, and the driving device turns off the first pressing pressure to the second wafer mounting device 200, and then lifts the second wafer mounting device 200 to make the bonding layer 140 bond to the wafer 240 to obtain a wafer bond and separate from the first wafer mounting device 100, it can be understood that this step is completed to achieve the bonding of the bonding layer 140 and the wafer 240 by the first wafer mounting device 100 and the second wafer mounting device 200, and avoid the operator from contacting the bonding agent when achieving the bonding of the wafer 240 and the bonding layer 140, thereby protecting the health of human body.
S4: bonding a wafer adherend to a wafer mount 300
In the present embodiment, referring to fig. 7-9, before the step of driving the second wafer mounting device 200 to approach the rotary heating platform 500 by the driving device to bond the wafer adhesive body to the wafer mounting base 300, the wafer mounting base 300 needs to be mounted on the rotary heating platform 500, specifically, by rotating the mounting part of the heating stage 500 to be mounted to the wafer mounting seat 300 (i.e. the crucible cover), and the rotary heating platform 500 rotates at a second preset speed, the glue injection device is connected with the glue injection tube 400, and applies an adhesive to the side of the wafer mount 300 away from the rotary heating stage 500 through the glue-spraying opening 410 of the glue-spraying tube 400, when the thickness of the adhesive in the die pad 300 reaches a predetermined thickness, the glue injection device is turned off, and the rotary heating platform 500 stops rotating, it should be noted that the glue injection device and the second vacuum generator are not shown in the drawings.
In detail, in this embodiment, the structure of the rotary heating platform 500 is not limited to a specific structure as long as the rotary heating platform 500 can rotate and heat and can stably clamp the wafer mounting base 300, when the wafer mounting base 300 to be bonded with the wafer 240 is clamped on the rotary heating platform 500, the glue injection device coats the adhesive on the wafer mounting base 300 through the connection glue injection tube 400, and simultaneously, the rotation speed of the rotary heating platform 500 is set according to actual needs, so as to drive the wafer mounting base 300 to rotate, so as to realize sufficient uniformity of the adhesive on the wafer mounting base 300, and adjust the dosage of the adhesive on the wafer mounting base 300 through the glue injection device, when the thickness of the adhesive on the wafer mounting base 300 reaches the required thickness for bonding the wafer 240, the glue injection device is stopped, and the rotary heating platform 500 stops rotating, smooth bonding of the wafer mount 300 and the wafer 240 is sufficiently ensured.
In this embodiment, the step of bonding the wafer adhesive body to the wafer mounting base 300 by driving the second wafer mounting device 200 close to the rotary heating stage 500 by the driving device comprises the following steps.
First, the second wafer mounting device 200 is driven to move to the upper part of the rotary heating platform by the X-direction moving pair of the driving device, the axis of the second adsorption piece and the axis of the rotary heating platform 500 are arranged to be in the same axis, the axis of the wafer bonding body and the axis of the wafer mounting seat 300 are in the same axis, the second wafer mounting device 200 is driven to descend by the Z-direction moving pair of the driving device, the second wafer mounting device 200 is pressed on the wafer mounting seat 300, the driving device is set to press the second wafer mounting device 200 at a second pressing pressure, the rotary heating platform 500 is heated at the same time, and a second heating time is set, so that the wafer bonding body is bonded on the wafer mounting seat 300 through the adhesive. The heating time can be designed to be different times according to the dosage of the adhesive on the wafer mounting seat 300, so that the adhesive effect of the adhesive is better, and the adhesive layer 140 is smoothly adhered to the wafer mounting seat 300.
Further, after the adhesive layer 140 is smoothly adhered to the wafer mount 300, the second vacuum generator is turned off and the second pressing pressure of the driving means against the second wafer mounting apparatus 200 is released. It can be understood that, after the second vacuum generator is turned off, the pressure inside the second wafer mounting apparatus 200 is at normal pressure, and the wafer 240 is not adsorbed to the second porous chuck 210, and after the driving apparatus turns off the second pressing pressure to the second wafer mounting apparatus 200, when the driving apparatus lifts the second wafer mounting apparatus 200 by the Z-direction moving pair, the adhesive layer 140 is smoothly adhered to the wafer mounting seat 300, that is, the wafer 240 is smoothly adhered to the wafer mounting seat 300.
Finally, the wafer holder 300 to which the wafer 240 has been bonded is removed from the rotary heating stage 500 and placed in a crucible in which silicon carbide powder is to be synthesized, and it should be noted that the first vacuum generator, the second vacuum generator, and the glue injection device are not shown in the drawings.
As described above, since the wafer bonding apparatus bonds the wafer to the wafer mounting pad by the wafer bonding method, the first suction unit of the first wafer mounting apparatus 100 and the rotary heating stage 500 are both rotated during the process of applying the adhesive, so that the adhesive layer 140 mounted on the first wafer mounting apparatus 100 is rotated along with the first suction unit during the process of applying the adhesive, and thus the adhesive layer 140 can be more uniformly applied by the centrifugal force during the process of applying the adhesive, and the strength after the adhesive layer 140 is bonded to the wafer 240 is ensured, and similarly, the wafer mounting pad 300 mounted on the rotary heating stage 500 is rotated along with the rotation of the rotating part, so that the adhesive applied to the wafer mounting pad 300 is more uniformly applied by the centrifugal force during the process of applying the adhesive to the wafer mounting pad 300, and also secures a strong force of bonding the wafer adherend to the wafer mount 300. The damage of chemical components of the adhesive to human bodies caused by the operation of personnel can be avoided, the health of operators can be protected, and the quality of the wafer 240 adhered to the wafer mounting seat 300 can be ensured to be uniform by adhering the wafer 240 through the wafer adhering device 1000.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims (10)

1. A wafer bonding apparatus for bonding a wafer to a wafer mounting base, comprising:
the first wafer mounting device comprises a first mounting frame and a first suction piece which is rotatably arranged on the first mounting frame, wherein the first suction piece is used for sucking the bonding layer;
the second wafer mounting device comprises a second mounting frame and a second adsorption piece arranged on the second mounting frame, and the second adsorption piece is used for adsorbing the wafer;
the rotary heating platform comprises a rotating part and a heating part which are connected, the heating part is used for heating the rotating part, and the rotating part is used for fixing the wafer mounting seat and driving the wafer mounting seat to rotate;
and the driving device is used for driving the second wafer mounting device to be close to or far away from the first wafer mounting device so as to enable the wafer to be bonded to the bonding layer to form a wafer bonding body, or the driving device is used for driving the second wafer mounting device to be close to or far away from the rotary heating platform so as to enable the wafer bonding body to be bonded to the wafer mounting seat.
2. The wafer bonding apparatus according to claim 1, wherein:
the first wafer mounting device further comprises a first heating member for heating the first suction member;
the second wafer mounting device further includes a second heating member for heating the second adsorption member.
3. A wafer bonding apparatus according to claims 1-2, wherein:
the wafer bonding device further comprises a rack, the rack comprises a first mounting platform and a second mounting platform, the first mounting platform is used for mounting the first wafer mounting device and the rotary heating platform, the second mounting platform is used for mounting the second wafer mounting device, and the second mounting platform is located above the first mounting platform.
4. A wafer bonding apparatus according to claims 1-2, wherein:
the wafer bonding device further comprises a glue injection device, and the glue injection device is used for quantitatively coating the bonding layer with the adhesive or quantitatively coating the wafer mounting seat with the adhesive.
5. The wafer bonding apparatus according to claim 1, wherein:
the driving device includes an X-direction moving pair for moving the second wafer mounting device in the X direction and a Z-direction moving pair for moving the second wafer mounting device in the Z direction.
6. A wafer bonding method, characterized in that the wafer bonding apparatus according to any one of claims 1 to 5 comprises:
mounting the bonding layer on the first wafer mounting device, rotating the first suction attachment at a first preset speed within a preset time, and then coating an adhesive on one side of the bonding layer, which is far away from the first wafer mounting device, through a glue injection device;
mounting the wafer on the second wafer mounting device;
driving the second wafer mounting device to be close to the first wafer mounting device through the driving device, and bonding the wafer to the bonding layer to form a wafer bonding body;
and driving the second wafer mounting device to be close to the rotary heating platform through the driving device, and bonding the wafer bonding body to the wafer mounting seat.
7. The wafer bonding method according to claim 6, wherein the step of bonding the wafer to the bonding layer to form a wafer bond by driving the second wafer mounting device close to the first wafer mounting device by the driving device comprises:
and driving the second wafer mounting device to move above the first wafer mounting device through the driving device, and arranging the axes of the second adsorption piece and the first adsorption piece to be in the same axis, so that the axis of the wafer and the axis of the bonding layer are in the same axis.
8. The wafer bonding method according to claim 7, wherein the step of bonding the wafer to the adhesive layer to form a wafer bond by driving the second wafer mounting device to approach the first wafer mounting device by the driving device comprises:
driving the second wafer mounting device to descend through the driving device so that the wafer is attached to the bonding layer to form the wafer bonding body, setting a first pressing pressure of the driving device on the second wafer mounting device, and setting a first pressure holding time;
and releasing the adsorption state of the first adsorption part and the bonding layer, maintaining the adsorption state of the second adsorption part and the wafer, and then lifting the second wafer mounting device through the driving device to obtain the wafer adhesion body.
9. The wafer bonding method according to claim 8, wherein said step of bonding said wafer bond to said wafer mount by driving said second wafer mounting device by said driving device close to said rotary heating platen comprises, prior to said step of bonding said wafer bond to said wafer mount:
will the wafer mount pad is fixed in rotatory heating platform, and passes through the injecting glue device with the adhesive coat in the wafer mount pad is kept away from one side of rotatory heating platform, just rotatory heating platform is rotatory with the second speed that predetermines, so that adhesive thickness on the wafer mount pad reaches and predetermines thickness.
10. The wafer bonding method according to claim 9, wherein the step of bonding the wafer adhesive body to the wafer mount by driving the second wafer mounting device close to the rotary heating stage by the driving device comprises:
the driving device drives the second wafer mounting device to move to the position above the rotary heating platform, and the axis of the second adsorption piece and the axis of the rotary heating platform are arranged on the same axis, so that the axis of the wafer adhesion body and the axis of the wafer mounting seat are on the same axis;
and driving the second wafer mounting device to descend through the driving device, enabling the second wafer mounting device to be pressed on the wafer mounting seat, setting the driving device to press the second wafer mounting device at a second pressing pressure, heating the rotary heating platform and setting a second heating time, so that the wafer bonding body is bonded on the wafer mounting seat through the bonding agent.
CN202210260497.5A 2022-03-16 2022-03-16 Wafer bonding device and wafer bonding method Pending CN114649243A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210260497.5A CN114649243A (en) 2022-03-16 2022-03-16 Wafer bonding device and wafer bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210260497.5A CN114649243A (en) 2022-03-16 2022-03-16 Wafer bonding device and wafer bonding method

Publications (1)

Publication Number Publication Date
CN114649243A true CN114649243A (en) 2022-06-21

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CN202210260497.5A Pending CN114649243A (en) 2022-03-16 2022-03-16 Wafer bonding device and wafer bonding method

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Country Link
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