CN114643651A - Silicon carbide wafer wax pasting method and auxiliary wax pasting device - Google Patents
Silicon carbide wafer wax pasting method and auxiliary wax pasting device Download PDFInfo
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- CN114643651A CN114643651A CN202210277587.5A CN202210277587A CN114643651A CN 114643651 A CN114643651 A CN 114643651A CN 202210277587 A CN202210277587 A CN 202210277587A CN 114643651 A CN114643651 A CN 114643651A
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 173
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 173
- 238000000034 method Methods 0.000 title claims abstract description 38
- 239000000919 ceramic Substances 0.000 claims abstract description 97
- 238000004018 waxing Methods 0.000 claims abstract description 28
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 238000001816 cooling Methods 0.000 claims abstract description 9
- 239000011248 coating agent Substances 0.000 claims description 14
- 238000000576 coating method Methods 0.000 claims description 14
- 239000007787 solid Substances 0.000 claims description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 10
- 230000007480 spreading Effects 0.000 claims description 6
- 238000003892 spreading Methods 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 229910052742 iron Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 153
- 230000005484 gravity Effects 0.000 description 11
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- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
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- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- IYRDVAUFQZOLSB-UHFFFAOYSA-N copper iron Chemical compound [Fe].[Cu] IYRDVAUFQZOLSB-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
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- 238000006467 substitution reaction Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
Abstract
The invention provides a silicon carbide wafer wax pasting method and an auxiliary wax pasting device, wherein the silicon carbide wafer wax pasting method comprises the following steps: placing the silicon carbide wafer on a ceramic disc by using an auxiliary wax sticking device, and heating the ceramic disc; when the ceramic disc reaches a preset temperature, waxing is carried out on the central position of the surface to be waxed of the silicon carbide wafer; wherein the surface to be waxed is the surface of the silicon carbide wafer far away from the ceramic disc; taking down the wax-coated silicon carbide wafer from the ceramic disc by using an auxiliary wax sticking device and cooling to obtain the silicon carbide wafer with a wax layer; placing the silicon carbide wafer with the wax layer on a ceramic disc reaching a preset temperature by using an auxiliary wax sticking device so as to realize the adhesion of the silicon carbide wafer and the ceramic disc; wherein the wax layer is directed towards the ceramic disc. According to the invention, the auxiliary wax pasting device is adopted to manually paste the wax on the silicon carbide wafer, so that the requirement on the degree of ripeness and the training of the wax pasting of workers is reduced, bubbles can be eliminated in the manual wax pasting, the high efficiency of the manual wax pasting is realized, and the finished product rate of the paste is improved.
Description
Technical Field
The invention relates to the technical field of wax pasting of semiconductor wafers, in particular to a wax pasting method and an auxiliary wax pasting device for a silicon carbide wafer.
Background
At present, in the field of wax pasting processing of the upstream of a silicon carbide wafer, a traditional wax pasting device needs to be subjected to multiple steps of heating, waxing, pasting, tabletting, waxing and the like, and the efficiency is low. Although automatic pasting devices with high efficiency are also available in the market, the devices are high in price, and in the early development stage or the stage of testing the product performance by a downstream manufacturer, because the quantity of the pasted devices is not large, engineers cannot avoid manually pasting wax during the experiment.
In the conventional manual wax-pasting process for the wafer, a ceramic disc needs to be heated to a certain temperature in advance to ensure that bonding wax can be melted, a wax layer is coated at a position needing to be pasted with wax on the periphery of the ceramic disc, the wax coating area is larger than the area of the wafer, and then the wafer needing to be bonded is placed on a liquid wax layer, so that the surface of the wafer is finally and comprehensively covered with the wax layer to finish the wax coating operation. After the wax is melted, when the wafer is pressed and compacted by the cylinder of the wax pasting machine, the air around the wafer is easy to cause waxing bubbles due to the difference between the thickness of the wax layer and the proficiency of the worker for pasting, and the bubbles are remained in the middle of the wax layer if the air cannot be discharged in time in the process of compacting the wafer. Therefore, the traditional manual wax pasting mode is not favorable for the yield of wax pasting of the wafer, the working efficiency is reduced, and the enterprise cost is increased.
Disclosure of Invention
The invention provides a silicon carbide wafer wax pasting method and an auxiliary wax pasting device, wherein the silicon carbide wafer wax pasting method adopts a natural flow casting mode to paste wax, so that the requirement on the well-done degree of wax pasting of workers is reduced, bubbles can be eliminated in manual wax pasting, the high efficiency of manual wax pasting is realized, and the finished product rate of the pasted wax is improved.
In order to achieve the above object, in a first aspect, the present invention provides a method for waxing a silicon carbide wafer, comprising:
placing a silicon carbide wafer on a ceramic disc by using an auxiliary wax sticking device, and heating the ceramic disc;
when the ceramic disc reaches a preset temperature, waxing is carried out on the center position of the surface to be waxed of the silicon carbide wafer; wherein the surface to be waxed is the side of the silicon carbide wafer far away from the ceramic disc;
taking down the silicon carbide wafer coated with wax from the ceramic disc by using an auxiliary wax sticking device and cooling to obtain the silicon carbide wafer with a wax layer;
placing the silicon carbide wafer with the wax layer on a ceramic disc reaching the preset temperature by using an auxiliary wax sticking device so as to realize the adhesion of the silicon carbide wafer and the ceramic disc; wherein the wax layer faces the ceramic disc.
Preferably, the preset temperature is 80-140 ℃.
Preferably, the wax coating is a solid adhesive wax.
Preferably, the step of placing the silicon carbide wafer with the wax layer on the ceramic disc reaching the preset temperature by using an auxiliary wax pasting device to realize the adhesion of the silicon carbide wafer and the ceramic disc comprises the following steps:
and placing the ceramic disc reaching the preset temperature on a vibrating device, and after the wax layer is melted, spreading the wax layer to the whole silicon carbide wafer through the vibrating device to realize the adhesion of the silicon carbide wafer and the ceramic disc.
Preferably, the auxiliary wax pasting device is provided with a through hole, and the through hole corresponds to the center position of the surface to be waxed of the silicon carbide wafer.
Preferably, the silicon carbide wafer with the wax layer is placed on the ceramic disc reaching the preset temperature by using an auxiliary wax pasting device so as to realize the adhesion of the silicon carbide wafer and the ceramic disc, and the method further comprises the following steps:
placing the silicon carbide wafer with the wax layer on a ceramic disc reaching the preset temperature by using an auxiliary wax sticking device, and after the wax layer is melted, drawing out the auxiliary wax sticking device along the direction of the gap of the through hole so as to spread the wax layer to the whole silicon carbide wafer, thereby realizing the adhesion of the silicon carbide wafer and the ceramic disc; wherein the wax layer is located within the through-hole.
In a second aspect, the present invention provides an auxiliary wax-pasting device used in the method for pasting wax on a silicon carbide wafer according to the first aspect, the auxiliary wax-pasting device comprising: the handle, the tray and the limiting component;
the handle is fixedly connected with the tray, and the limit part is arranged at the edge of the tray;
the tray is used for carrying a silicon carbide wafer so as to place the silicon carbide wafer on or take the silicon carbide wafer off the ceramic disc;
the tray is provided with a through hole; the through hole corresponds to the center of the surface to be waxed of the silicon carbide wafer;
the limiting component is used for limiting the silicon carbide wafer.
Preferably, the upper surface of the tray is of a slope structure.
Preferably, the through hole is U-shaped.
Preferably, the diameter of the tray is the same as the diameter of the silicon carbide wafer.
Preferably, the tray is made of a heat-conducting metal material, preferably at least one of iron, aluminum and copper.
Preferably, one side of the tray is also provided with a straight-edge notch, and the straight-edge notch is matched with the positioning edge of the silicon carbide wafer;
and when the straight-edge notch is superposed with the positioning edge, the straight-edge notch is used for distinguishing the carbon surface and the silicon surface of the silicon carbide wafer.
More preferably, the length of the straight edge notch is the same as the length of the positioning edge of the silicon carbide wafer.
Compared with the prior art, the invention at least has the following beneficial effects:
in the invention, a local waxing mode is adopted, only the central position of the silicon carbide wafer is waxed, then the cooled waxed silicon carbide wafer is arranged on the ceramic disc with the waxed surface facing the ceramic disc, the wax is gradually spread to the edge from the central position by virtue of the gravity action by virtue of a natural casting mode of heating solid bonding wax, and air below the wafer is extruded simultaneously, so that the silicon carbide wafer is bonded with the ceramic disc, the problem of air bubble retention in a wax layer is effectively avoided, the air bubbles are eliminated in the manual wax pasting, the experience requirement on manual wax pasting of workers is greatly reduced, the high efficiency of manual wax pasting is realized, and the yield of the manual wax pasting is improved. In addition, the auxiliary wax pasting device is adopted for pasting the wax on the silicon carbide wafer, the risk that personnel are scalded due to the high temperature of the ceramic disc when the wax is pasted manually is avoided, and meanwhile, the device is utilized to enable the operation to be simpler and more convenient, so that the efficiency of manual pasting is further improved.
Drawings
FIG. 1 is a flow chart of a method for waxing a silicon carbide wafer according to an embodiment of the present invention;
FIG. 2 is a schematic view of a silicon carbide wafer wax application provided by an embodiment of the present invention;
FIG. 3 is a top view of an auxiliary wax applicator according to an embodiment of the present invention;
FIG. 4 is a front view of an auxiliary wax applicator according to an embodiment of the present invention;
in the figure: 201: a silicon carbide wafer; 202: a wax layer; 203: a ceramic pan; 204: a vibration device; 301: a handle; 302: a tray; 303: a limiting component; 3021: a through hole; 3022: and (6) straight edge notches.
Detailed Description
To make the objects, technical solutions and advantages of the embodiments of the present invention clearer and more complete, the technical solutions in the embodiments of the present invention will be described below with reference to the embodiments of the present invention and the accompanying drawings, it is obvious that the described embodiments are some, but not all, embodiments of the present invention, and all other embodiments obtained by a person of ordinary skill in the art without creative efforts based on the embodiments of the present invention belong to the protection scope of the present invention.
The invention provides a silicon carbide wafer wax pasting method, as shown in figure 1, the silicon carbide wafer wax pasting method comprises the following steps:
step 100: placing the silicon carbide wafer on a ceramic disc by using an auxiliary wax sticking device, and heating the ceramic disc;
step 102: when the ceramic disc reaches a preset temperature, waxing is carried out on the central position of the surface to be waxed of the silicon carbide wafer; wherein the surface to be waxed is the surface of the silicon carbide wafer far away from the ceramic disc;
step 104: taking down the wax-coated silicon carbide wafer from the ceramic disc by using an auxiliary wax sticking device and cooling to obtain the silicon carbide wafer with a wax layer;
step 106: placing the silicon carbide wafer with the wax layer on a ceramic disc reaching a preset temperature by using an auxiliary wax sticking device so as to realize the adhesion of the silicon carbide wafer and the ceramic disc; wherein the wax layer is directed towards the ceramic disc.
The wax-coated area is smaller than the area of the silicon carbide wafer.
In step 100 of the present invention, heat transfer from the ceramic disk to the silicon carbide wafer is achieved more quickly by the auxiliary wax applicator.
In the invention, in step 104, the silicon carbide wafer coated with wax is placed under room temperature (25 ℃) to be cooled for 30-60 seconds so as to re-solidify the wax layer and form a convex wax layer in the central position, and the turnover operation is conveniently carried out in step 106, namely, the wax-coated surface of the silicon carbide wafer coated with wax faces the ceramic disc (namely, the wax layer faces the ceramic disc). It should be noted that the specific cooling time depends on the actual situation.
In the invention, in step 106, the waxed silicon carbide wafer with the convex wax layer obtained in step 104 is turned over, the side with the wax layer faces downwards, the waxed silicon carbide wafer is placed back on the ceramic disc reaching the preset temperature by using the auxiliary wax pasting device, then the auxiliary wax pasting device is taken down, the wax layer is melted again under the heating state and is vertical under the influence of gravity until the wax layer is completely spread on the ceramic disc to naturally contact and adhere, meanwhile, the wax layer is naturally spread and spread under the gravity action of the silicon carbide wafer and extrudes air below the wafer, so that the lower layer space of the whole silicon carbide wafer is finally filled, and meanwhile, the spreading process of the wax layer enables the thickness of the wax layer to be synchronously spread and thinned.
It is noted that after the silicon carbide wafer is bonded to the ceramic disk in step 106, the final wax attachment process for the wafer is performed using conventional wafer sheeting and cooling procedures known in the art.
In the invention, a local waxing mode is adopted, only the central position of the silicon carbide wafer is waxed, then the cooled waxed silicon carbide wafer is arranged on the ceramic disc with the waxed surface facing the ceramic disc, the wax is gradually spread to the edge from the central position by virtue of the gravity action by virtue of a natural casting mode of heating solid bonding wax, and air below the wafer is extruded at the same time, so that the silicon carbide wafer is bonded with the ceramic disc, the problem of air bubble retention in a wax layer is effectively avoided, the experience requirement on manual wax pasting of workers is greatly reduced, the high efficiency of manual wax pasting is realized, and the yield of manual wax pasting is improved. Meanwhile, as the local waxing mode is adopted, compared with the traditional manual waxing of the whole crystal face, the consumption of the wax is greatly reduced. In addition, the auxiliary wax pasting device is adopted for pasting the wax on the silicon carbide wafer, so that the risk of scalding personnel due to high temperature of the ceramic disc during manual wax pasting is avoided, and meanwhile, the device is utilized to enable the operation to be simpler and more convenient, so that the efficiency of manual wax pasting is further improved.
According to some preferred embodiments, in step 102, the preset temperature is 80 to 140 ℃ (for example, 80 ℃, 85 ℃, 90 ℃, 95 ℃, 100 ℃, 105 ℃, 110 ℃, 115 ℃, 120 ℃, 125 ℃, 130 ℃, 135 ℃ or 140 ℃).
According to some preferred embodiments, in step 102, the wax coating is performed using a solid adhesive wax.
The solid adhesive wax includes, but is not limited to, any of general type, temperature resistance type, high viscosity type, alcohol-soluble type, and the like. The wax coating range is not too large and is not required to be positioned at the center of the silicon carbide wafer, generally, a cylindrical solid bonding wax with the diameter of about 1-4 cm is selected, the wax coating thickness depends on the size of the silicon carbide wafer, and the wax coating can completely cover the surface of the silicon carbide wafer to be wax coated after the wax layer is spread. Therefore, when manual waxing is carried out, only the wax coating amount is required to be larger than the actual wax pasting amount, the excessive wax can be removed at the later stage, and meanwhile, the wax coating at the central position is beneficial to more uniformly casting the wax to the edge of the silicon carbide wafer.
In the present invention, the ceramic disk is heated to a predetermined temperature in order to melt the solid bonding wax used and to be able to maintain a liquid state at the preheating temperature.
According to some preferred embodiments, step 106 further comprises:
and placing the ceramic disc reaching the preset temperature on a vibrating device, and spreading the wax layer to the whole silicon carbide wafer through the vibrating device after the wax layer is melted so as to realize the adhesion of the silicon carbide wafer and the ceramic disc.
Specifically, as shown in the schematic diagram of the silicon carbide wafer waxing shown in fig. 2, the ceramic disc is placed on the vibrating device, and after the wax layer melts, the wax layer is spread to the whole silicon carbide wafer by the vibrating device and by the gravity of the silicon carbide wafer, so that the silicon carbide wafer is bonded with the ceramic disc. Therefore, the flow casting and the uniform distribution of the liquid wax can be further accelerated by the aid of the vibration device, and the thickness uniformity of the wax layer under the silicon carbide wafer is improved. The vibration time of the vibration device may be set to 20 to 40 seconds according to the specification of the silicon carbide wafer.
According to some preferred embodiments, the auxiliary wax pasting device is provided with a through hole, and the through hole corresponds to the central position of the surface to be waxed of the silicon carbide wafer.
The through hole corresponds to the center position of the surface to be waxed of the silicon carbide wafer, which means that the center position coincides with the through hole and the center position falls within the range of the through hole, so that the silicon carbide wafer is bonded by adopting an automatic casting mode in the following.
According to some preferred embodiments, step 106 further comprises:
placing the silicon carbide wafer with the wax layer on a ceramic disc reaching a preset temperature by using an auxiliary wax sticking device, and after the wax layer is melted, drawing out the auxiliary wax sticking device along the direction of the gap of the through hole so as to spread the wax layer to the whole silicon carbide wafer, thereby realizing the adhesion of the silicon carbide wafer and the ceramic disc; wherein the wax layer is positioned in the through hole.
In step 106 of the present invention, the waxed silicon carbide wafer with the raised wax layer obtained in step 104 is turned over, so that the side with the wax layer faces downward, the waxed silicon carbide wafer is placed back on the ceramic disc reaching the preset temperature by using the auxiliary wax pasting device, and the raised wax layer falls into the through hole of the auxiliary wax pasting device, and after the wax layer is heated and re-melted and is vertical under the influence of gravity, the wax layer is slowly pumped out of the auxiliary wax pasting device along the gap direction of the through hole after filling the through hole, so that the wax layer can naturally spread and extrude the air below the wafer under the action of gravity of the silicon carbide wafer, so as to finally fill the lower layer space of the whole silicon carbide wafer, and simultaneously, the spreading process of the wax layer also makes the thickness of the wax layer synchronously thin.
The invention also provides an auxiliary wax pasting device based on the silicon carbide wafer wax pasting method, as shown in fig. 3, the auxiliary wax pasting device comprises: a handle 301, a tray 302 and a stop member 303;
the handle 301 is fixedly connected with the tray 302, and the edge of the tray 301 is provided with a limiting part 303;
the tray 301 is used for carrying a silicon carbide wafer to place the silicon carbide wafer on or take the silicon carbide wafer off the ceramic disc;
the tray 302 is provided with a through hole 3021; and the through hole 3021 corresponds to the center position of the surface to be waxed of the silicon carbide wafer;
the stopper member 303 is used for stopping the silicon carbide wafer.
It should be noted that the drawings of the present invention are provided for illustrative purposes only, and the scale of the components in the drawings is not necessarily consistent with the actual product. The handle can also be provided with a heat insulation component.
In the invention, the auxiliary wax sticking device aims to facilitate the taking and placing operation of the heating silicon carbide wafer, improve the operation efficiency and the working safety and avoid scalding of operators. In addition, the limiting component limits the excessive free movement of the silicon carbide wafer, and avoids the risk of accidental falling of the wafer caused by excessive amplitude in manual operation.
The number of the limiting parts is at least two, and the at least two limiting parts are arranged at positions which do not influence the pulling-out of the silicon carbide wafer along the direction of the notch of the through hole. Preferably, the limiting member is located in any 1/4 arc (the arc is the circumference calculated by the diameter of the tray) at both ends of the handle.
According to some preferred embodiments, as shown in FIG. 4, the upper surface of the tray 302 is a sloped structure.
In the invention, the upper surface of the tray is set to be a micro-inclined surface structure, and the lower surface is set to be a plane, so that the auxiliary wax pasting device, the ceramic disc and the silicon carbide wafer can be well pasted, the heat transfer is accelerated, the wax layer is convenient to melt again and is influenced by self gravity to be beneficial to forming a single-convex wax layer, the micro-lifting posture is not required to be manually kept, the natural bonding with the ceramic disc is finally completed, and the hidden danger that bubbles are possibly formed due to the multi-point contact of the wax layer and the ceramic disc is eliminated; meanwhile, the inclined plane structure is also beneficial to taking and placing the silicon carbide wafer.
According to some preferred embodiments, as shown in fig. 3, the through-hole 3021 is U-shaped.
In the invention, the U-shaped through hole of the tray is beneficial to natural bonding of the wax layer and the ceramic tray under the influence of self gravity after the wax layer is re-melted, the subsequent drawing operation of the tray is convenient, and the wax sticking operation efficiency is improved.
According to some preferred embodiments, the diameter of the tray is the same as the diameter of the silicon carbide wafer.
According to some more preferred embodiments, as shown in fig. 3, the through hole 3021 is U-shaped, and when the diameter of the tray is the same as the diameter of the silicon carbide wafer, the center of the arc of the U-shape coincides with the center of the silicon carbide wafer, so that the center position of the surface to be waxed of the silicon carbide wafer can be directly determined through the U-shaped through hole during waxing, and the wax at the center position can be further uniformly cast to the whole silicon carbide wafer.
According to some preferred embodiments, the tray 302 is made of a thermally conductive metal material, preferably at least one of iron, aluminum, and copper.
At least one of them is a mixture of any one or any several of them mixed in any ratio. Wherein, the mixture of any several of iron, aluminum and copper in proportion is alloy. The tray made of a heat conductive metal material enables faster heat transfer from the ceramic disk to the silicon carbide wafer.
According to some preferred embodiments, as shown in fig. 3, one side of the tray 302 is further provided with a straight-edge notch 3022, the straight-edge notch 3022 matching with the positioning edge of the silicon carbide wafer; wherein, when the straight-edge gap 3022 coincides with the positioning edge, it is used to distinguish the carbon surface and the silicon surface of the silicon carbide wafer by the straight-edge gap.
In the present invention, the straight-edge notch of the tray is intended to facilitate determination of whether the upper surface of the silicon carbide wafer is carbon or silicon in a waxing operation. When the positioning edge of the silicon carbide wafer is coincident with the straight-edge notch of the tray, the upper surface of the silicon carbide wafer is a silicon surface, and the upper surface of the silicon carbide wafer is a carbon surface otherwise.
According to some more preferred embodiments, the length of the straight-sided notch 3022 is the same as the length of the positioning side of the silicon carbide wafer.
When the diameter of the tray is the same as the diameter of the silicon carbide wafer, the length of the straight-edge notch is the same as the length of the positioning edge of the silicon carbide wafer.
In order to more clearly illustrate the technical solutions and advantages of the present invention, the present invention is further described below with reference to the following embodiments.
In the following examples, the auxiliary wax applicator is shown in fig. 3 and 4.
Example 1
A method of manually waxing a 4 inch size silicon carbide wafer, the method comprising:
step (1): placing a 4-inch silicon carbide wafer with the surface to be waxed upwards on an auxiliary wax sticking device, and then placing the silicon carbide wafer on a ceramic disc for heating by using a tray (made of iron) of the auxiliary wax sticking device, wherein the preset temperature of the ceramic disc is 100 ℃;
step (2): when the preset temperature of the ceramic disc reaches 100 ℃, preheating the silicon carbide wafer, and waxing the central position of the upper surface of the silicon carbide wafer by using alcohol-soluble solid bonding wax, wherein the wax coating area is in a circle with the diameter of 3 cm;
and (3): removing the silicon carbide wafer coated with the wax in the step (2) from the ceramic disc by using an auxiliary wax pasting device, and cooling the wax layer again to be solidified at room temperature (25 ℃);
and (4): manually turning over the cooled silicon carbide wafer with the raised wax layer to enable the surface with the wax layer to face downwards and face towards the ceramic disc, and then replacing the silicon carbide wafer on the ceramic disc reaching the preset temperature by using an auxiliary wax sticking device; wherein, the raised wax layer is positioned in the through hole of the tray;
and (5): under the heating state, the raised wax layer on the silicon carbide wafer is re-melted and sags under the influence of gravity, and a single raised wax layer is formed in the U-shaped through hole until the ceramic disc is contacted and bonded with the ceramic disc; then, the auxiliary wax sticking device is pulled away along the direction of the gap of the U-shaped through hole, the melted wax layer is naturally cast and spread out to squeeze air below the wafer out to finally fill the lower layer space of the whole wafer under the action of gravity of the silicon carbide wafer, and the spreading process of the wax layer enables the thickness of the wax layer to be synchronously thinned; meanwhile, the ceramic disc on the vibration table also increases the fluidity of the wax layer through the vibration applied by the vibration table, and continuously vibrates for 20 seconds after the wax layer is spread, so that the space inside the wax layer is uniformly redistributed;
and (6): and finishing the wax pasting process of the silicon carbide wafer by adopting conventional tabletting and cooling procedures.
Example 2
Example 2 is essentially the same as example 1, except that:
a silicon carbide wafer with the size of 6 inches is adopted; wherein, the tray of the auxiliary wax sticking device is made of aluminum;
the preset temperature of the ceramic disc is 120 ℃; adopting temperature-resistant solid bonding wax in the step (2), wherein the wax coating area is a circle with the diameter of 4 cm; and (5) after the wax layer is spread, the vibration duration of the vibration table is 40 s.
Example 3
Example 3 is essentially the same as example 1, except that:
a silicon carbide wafer with the size of 2 inches is adopted; wherein, the tray of the auxiliary wax pasting device is made of copper-iron alloy;
the preset temperature of the ceramic disc is 110 ℃; in the step (2), high-viscosity solid bonding wax is adopted, and the wax coating area is circular with the diameter of 1 cm.
Comparative example 1
A conventional manual wax application method, comprising:
step (1): heating the ceramic disc and preheating to 120 ℃;
step (2): when the temperature of the ceramic disc reaches 120 ℃, waxing is carried out on the area to be pasted with wax on the ceramic disc, wherein the area of the wax-coated area is larger than that of the silicon carbide wafer;
and (3): removing excessive wax by using a scraping blade, uniformly coating a wax layer, and manually placing a 6-inch silicon carbide wafer on the uniformly coated wax layer to adhere the silicon carbide wafer to the ceramic disc;
and (4): and finishing the wax pasting process of the silicon carbide wafer by adopting conventional tabletting and cooling procedures.
By adopting the wax pasting process completed by the manual wax pasting method of the silicon carbide wafer in the embodiments 1 to 3, the space between the silicon carbide wafer and the ceramic disc is completely filled with the bonding wax layer, no bubbles are left, and the thickness uniformity of the wax layer is high. In comparative example 1, since the sic wafer is a thin material, when the wafer is manually placed, due to the difference in the hand-held position, the slight deformation of the wafer itself, and the non-uniformity of the wax layer thickness at different positions, it cannot be guaranteed that air between the wafer and the wax layer can be extruded out in time when the wax layer is contacted, and when the wax layer and the wafer are contacted and communicated with each other, a small amount of air is sealed by the wax layer and stays below the wafer to form bubbles, so that the conventional manual wax-pasting method has certain experience requirements on operators, and the yield is low.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention. The invention has not been described in detail and is in part known to those of skill in the art.
Claims (10)
1. A method for sticking wax on a silicon carbide wafer is characterized by comprising the following steps:
placing a silicon carbide wafer on a ceramic disc by using an auxiliary wax sticking device, and heating the ceramic disc;
when the ceramic disc reaches a preset temperature, waxing is carried out on the center position of the surface to be waxed of the silicon carbide wafer; wherein the surface to be waxed is the side of the silicon carbide wafer far away from the ceramic disc;
taking down the silicon carbide wafer coated with wax from the ceramic disc by using an auxiliary wax sticking device and cooling to obtain the silicon carbide wafer with a wax layer;
placing the silicon carbide wafer with the wax layer on a ceramic disc reaching the preset temperature by using an auxiliary wax sticking device so as to realize the adhesion of the silicon carbide wafer and the ceramic disc; wherein the wax layer faces the ceramic disc.
2. The method for waxing a silicon carbide wafer according to claim 1,
the preset temperature is 80-140 ℃.
3. The method for waxing a silicon carbide wafer according to claim 1,
the wax coating adopts solid bonding wax.
4. The silicon carbide wafer waxing method according to claim 1, wherein said placing said silicon carbide wafer with wax layer on a ceramic disc reaching said preset temperature by using an auxiliary waxing device to achieve bonding of silicon carbide wafer and said ceramic disc comprises:
and placing the ceramic disc reaching the preset temperature on a vibrating device, and after the wax layer is melted, spreading the wax layer to the whole silicon carbide wafer through the vibrating device to realize the adhesion of the silicon carbide wafer and the ceramic disc.
5. The silicon carbide wafer waxing method according to any one of claims 1 to 4,
and the auxiliary wax pasting device is provided with a through hole, and the through hole corresponds to the central position of the surface to be waxed of the silicon carbide wafer.
6. The silicon carbide wafer waxing method according to claim 5, wherein said silicon carbide wafer with wax layer is placed on a ceramic disc reaching said preset temperature by using an auxiliary waxing device to achieve bonding of silicon carbide wafer and said ceramic disc, further comprising:
placing the silicon carbide wafer with the wax layer on a ceramic disc reaching the preset temperature by using an auxiliary wax sticking device, and after the wax layer is melted, drawing out the auxiliary wax sticking device along the direction of the gap of the through hole so as to spread the wax layer to the whole silicon carbide wafer, thereby realizing the adhesion of the silicon carbide wafer and the ceramic disc; wherein the wax layer is located in the through hole.
7. An auxiliary wax-pasting device based on the method for pasting wax on a silicon carbide wafer according to any one of claims 1 to 6, wherein the auxiliary wax-pasting device comprises: the handle, the tray and the limiting component are arranged on the tray;
the handle is fixedly connected with the tray, and the limit part is arranged at the edge of the tray;
the tray is used for carrying a silicon carbide wafer so as to place the silicon carbide wafer on or take the silicon carbide wafer off the ceramic disc;
the tray is provided with a through hole; the through hole corresponds to the center of the surface to be waxed of the silicon carbide wafer;
the limiting component is used for limiting the silicon carbide wafer.
8. The auxiliary waxing device according to claim 7,
the upper surface of the tray is of an inclined plane structure; and/or
The through hole is U-shaped.
9. The auxiliary wax sticking device as claimed in claim 7,
the diameter of the tray is the same as that of the silicon carbide wafer; and/or
The tray is made of a heat-conducting metal material, preferably at least one of iron, aluminum and copper.
10. The auxiliary wax attaching device as claimed in any one of claims 7 to 9,
one side of the tray is also provided with a straight edge gap, and the straight edge gap is matched with the positioning edge of the silicon carbide wafer; preferably, the length of the straight edge gap is the same as that of the positioning edge of the silicon carbide wafer;
and when the straight-edge notch is coincident with the positioning edge, the straight-edge notch is used for distinguishing the carbon surface and the silicon surface of the silicon carbide wafer.
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| CN202210277587.5A CN114643651B (en) | 2022-03-21 | Silicon carbide wafer waxing method and auxiliary waxing device |
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| CN202210277587.5A CN114643651B (en) | 2022-03-21 | Silicon carbide wafer waxing method and auxiliary waxing device |
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| CN114643651B CN114643651B (en) | 2024-05-14 |
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| CN116453984A (en) * | 2023-06-19 | 2023-07-18 | 通威微电子有限公司 | Wax pasting fixing device and wax pasting fixing method for wafers with different sizes |
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