CN114640322B - Method for regulating and controlling center frequency of FBAR filter - Google Patents
Method for regulating and controlling center frequency of FBAR filter Download PDFInfo
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- CN114640322B CN114640322B CN202210305142.3A CN202210305142A CN114640322B CN 114640322 B CN114640322 B CN 114640322B CN 202210305142 A CN202210305142 A CN 202210305142A CN 114640322 B CN114640322 B CN 114640322B
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- 238000000034 method Methods 0.000 title claims abstract description 38
- 230000001276 controlling effect Effects 0.000 title abstract description 11
- 230000001105 regulatory effect Effects 0.000 title abstract description 8
- 238000002955 isolation Methods 0.000 claims abstract description 17
- 238000000059 patterning Methods 0.000 claims abstract description 17
- 238000002360 preparation method Methods 0.000 claims abstract description 7
- 238000004806 packaging method and process Methods 0.000 claims description 17
- 238000012360 testing method Methods 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 13
- 238000010884 ion-beam technique Methods 0.000 claims description 7
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 7
- 238000001259 photo etching Methods 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 7
- 239000000523 sample Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 5
- 229920006280 packaging film Polymers 0.000 claims description 4
- 239000012785 packaging film Substances 0.000 claims description 4
- 238000012858 packaging process Methods 0.000 claims description 4
- 229910052706 scandium Inorganic materials 0.000 claims description 3
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 14
- 238000004544 sputter deposition Methods 0.000 abstract description 11
- 230000007797 corrosion Effects 0.000 abstract description 5
- 238000005260 corrosion Methods 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 30
- 238000005530 etching Methods 0.000 description 10
- 239000013077 target material Substances 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 230000009471 action Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- -1 scandium-aluminum Chemical compound 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
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- 239000000463 material Substances 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0478—Resonance frequency in a process for mass production
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Abstract
A method for regulating and controlling the center frequency of an FBAR filter belongs to the technical field of filter preparation. The method comprises the steps of preparation of a frequency modulation layer, patterning of the frequency modulation layer, primary frequency modulation, preparation of an isolation layer, patterning of the isolation layer and secondary frequency modulation. According to the method for regulating and controlling the center frequency of the FBAR filter, the ScAlN film is deposited on the frequency modulation layer to serve as the isolation layer, the ScAlN does not react with the developing solution, the problem of corrosion of the frequency modulation layer generated when the FBAR filter is developed can be solved, and frequency deviation of the filter can be effectively avoided; meanwhile, the AlN frequency modulation layer is used as a substrate for growing the ScAlN film and can serve as a seed layer during sputtering, so that the preferred orientation of the ScAlN film is improved, and the film forming quality is improved.
Description
Technical Field
The invention belongs to the technical field of filter preparation, and particularly relates to a method for regulating and controlling the center frequency of an FBAR filter.
Background
The filter of the FBAR (Film Body Acoustic Resonator, film bulk acoustic filter) is a novel radio frequency filter and consists of an acoustic resonator. The frequency of the resonator is determined by the speed of the electromagnetic or acoustic wave propagating in the cavity and the size of the resonator, which is proportional to the wave speed. The wave speed of electromagnetic wave is 3 x 10 8 The sound velocity of sound waves is 3000-11000 m/s, and compared with the traditional cavity and medium filter working by electromagnetic waves, the filter has the absolute advantage of size, and is the best choice of the current filter at the mobile communication end. And the acoustic filter has the advantages of high Q value, high frequency, high reliability, small volume and mass production, and is also widely applied toBase station, automotive electronics, navigation, radar, communications, electronics, and the like.
At present, the packaging mode of the FBAR filter is mainly a film packaging mode of wafer level packaging (Wafer Level Package, WLP), a supporting layer is formed around each resonator by using photoresist, and a layer of film is attached to the supporting layer for preliminary packaging so as to isolate the filter from the outside. In this process, the developer may contact the frequency modulation layer of the frequency modulated device, affecting the performance of the filter. At present, the material of the frequency modulation layer of the FBAR filter is mainly AlN, and AlN is corroded by a developing solution such as PK-DEX4050 and the like to cause the frequency of the filter to be about 10MHz higher, and the defect that the frequency modulation technology cannot be used for solving the problem is limited, so that the packaging mode is applied to the FBAR filter with strict requirements on the center frequency index.
Disclosure of Invention
The invention aims to provide a method for regulating and controlling the center frequency of an FBAR filter aiming at the defects in the background art, so that the problem of corrosion of developing solution in wafer level packaging of the FBAR filter is effectively solved, frequency offset of the filter during wafer level packaging is avoided, and the center frequency of the FBAR filter is accurately controlled.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
a method of adjusting and controlling a center frequency of an FBAR filter, comprising the steps of:
preparing an AlN film with the thickness of 50-150 nm on an upper electrode layer of an FBAR resonator by adopting a magnetron sputtering method, and taking the AlN film as a frequency modulation layer;
step 2, patterning the frequency modulation layer:
patterning the frequency modulation layer obtained in the step 1 by adopting a photoetching process;
step 3, primary frequency modulation:
performing probe test on the structure obtained in the step 2, performing primary frequency modulation by adopting an ion beam polishing machine according to the center frequency obtained by the test, and adjusting the frequency of the filter to be 20-50 MHz higher than the target frequency;
step 4, preparation of an isolation layer:
depositing a ScAlN film with the thickness of 25-100 nm on the frequency modulation layer obtained after the treatment in the step 3 by adopting a magnetron sputtering method to serve as an isolation layer; the specific process is as follows: taking the composite structure obtained after the treatment in the step 3 as a substrate, scandium-aluminum alloy as a target material, and Ar and N 2 Under the action of high voltage, ar gas generates glow discharge to generate plasma, positive ions in the ion body can accelerate to bombard the surface of the cathode target material with negative electricity, so that atoms close to the surface obtain energy to separate from the target material and enter into vacuum, and the sputtered atoms reach the surface of the substrate and are connected with N 2 Forming a ScAlN film by depositing ScAlN on the substrate, wherein Ar and N 2 The flow ratio of (2) is 1: (2.5-4), sputtering pressure was 0.8X10 -3 ～1.2×10 -3 Pa, the sputtering power is 6000-8000W;
and 5, patterning the isolation layer:
patterning the isolation layer obtained in the step 4 by adopting a photoetching process;
step 6, secondary frequency modulation:
and (3) performing probe test on the structure obtained in the step (5), performing secondary frequency modulation by using an ion beam polishing machine according to the center frequency obtained by the test, adjusting the frequency of the filter to be the target frequency, and then packaging the filter by using a wafer level packaging film packaging process (WLP).
Further, the FBAR resonator includes a sacrificial layer, a seed layer, a lower electrode layer, a piezoelectric layer, and an upper electrode layer, which are sequentially disposed.
Furthermore, in the Scan film in the step 4, the mass percentage of scandium is 10-30wt%, and the Scan film of the composition can effectively resist the corrosion of the developer, and has the performance of longitudinal sound velocity, acoustic loss and the like similar to those of the AlN film.
Compared with the prior art, the invention has the beneficial effects that:
1. according to the method for regulating and controlling the center frequency of the FBAR filter, the ScAlN film is deposited on the frequency modulation layer to serve as the isolation layer, the ScAlN does not react with the developing solution, the problem of corrosion of the frequency modulation layer generated when the FBAR filter is developed can be solved, and frequency deviation of the filter can be effectively avoided.
2. According to the method for regulating and controlling the center frequency of the FBAR filter, the ScAlN film is deposited on the frequency modulation layer to serve as the isolation layer, and the AlN frequency modulation layer serves as the substrate for the growth of the ScAlN film and can serve as the seed layer during sputtering, so that the preferential orientation of the ScAlN film is improved, and the film forming quality is improved.
Drawings
FIG. 1 is a graph showing the thickness change of an AlN thin film having an initial thickness of 400nm measured by a dielectric thin film measuring instrument after immersing in a developer for 10 minutes;
FIG. 2 shows the thickness variation of the ScAlN thin film with an initial thickness of 400nm measured by a dielectric thin film measuring instrument after immersing in a developing solution for 10 minutes;
fig. 3 is a graph showing S-parameter variation of the FBAR filter of the comparative example before and after Wafer Level Packaging (WLP);
fig. 4 is a graph showing S-parameter variation curves of an FBAR filter obtained by the method according to the embodiment of the present invention before and after Wafer Level Packaging (WLP);
fig. 5 is a flowchart of a method for adjusting and controlling the center frequency of an FBAR filter according to the present invention.
Detailed Description
The present invention will be described in further detail below in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the detailed description and specific examples, while indicating the invention, are intended for purposes of illustration only and are not intended to limit the scope of the invention.
Examples
A method of adjusting and controlling a center frequency of an FBAR filter, comprising the steps of:
mo upper electrode layer of FBAR resonator (multi-layer structure of sacrificial layer/seed layer/lower electrode layer/piezoelectric layer/upper electrode layer) by magnetron sputtering methodPreparing an AlN film with the thickness of 130nm as a frequency modulation layer; the specific process is as follows: taking an FBAR resonator as a substrate, al as a target, taking the substrate as an anode, taking the target as a cathode, and Ar and N 2 Under the action of high voltage between two plates, ar gas generates glow discharge to generate plasma, positive ions in the ion body can accelerate to bombard the surface of cathode target material with negative electricity, al atoms close to the surface obtain energy and separate from the target material to enter vacuum, and the sputtered Al atoms reach the surface of the substrate and are connected with N 2 Reacting to generate AlN; wherein Ar and N 2 The flow ratio of (2) is 1:3, sputtering air pressure of 1×10 -3 Pa, sputtering power is 7000W;
step 2, patterning the frequency modulation layer:
patterning the frequency modulation layer obtained in the step 1 by adopting a photoetching process; the method comprises the following steps: performing gluing, exposure and development on the AlN film prepared in the step 1, removing AlN outside the photoresist protection area through etching, and finally removing photoresist in the pattern area to complete patterning of the frequency modulation layer; wherein the thickness of the photoresist is about 4 mu m when the AlN film is coated with the photoresist, and the etching gas is Cl when the AlN film is etched 2 、BCl 3 Mixed gas with Ar, cl 2 、BCl 3 The flow ratio of the etching gas to Ar is 1:2:2, and the etching gas pressure is 0.3Pa;
step 3, primary frequency modulation:
performing probe test on the structure obtained in the step 2, performing primary frequency modulation by adopting an ion beam polishing machine according to the center frequency obtained by the test, and adjusting the frequency of the filter to be 40MHz higher than the target frequency;
step 4, preparation of an isolation layer:
depositing a ScAlN film with the thickness of 50nm on the frequency modulation layer obtained after the treatment in the step 3 by adopting a magnetron sputtering method to serve as an isolation layer; the specific process is as follows: taking the composite structure obtained after the treatment in the step 3 as a substrate, scandium-aluminum alloy with scandium content of 20wt% as a target material, and Ar and N 2 The mixed gas of Ar gas is used as sputtering gas, under the action of high voltage, ar gas generates glow discharge to generate plasma, and positive ions in the ion body accelerate the bombardmentStriking the surface of the negatively charged cathode target material to enable atoms close to the surface to obtain energy to separate from the target material and enter vacuum, and the sputtered atoms reach the surface of the substrate and are connected with N 2 Forming a ScAlN film by depositing ScAlN on the substrate, wherein Ar and N 2 The flow ratio of (2) is 1:3, sputtering air pressure of 1×10 -3 Pa, sputtering power is 7000W;
and 5, patterning the isolation layer:
and (3) carrying out graphical treatment on the isolation layer obtained in the step (4) by adopting a photoetching process, wherein the specific process and etching parameters are completely the same as those of the step (2).
Step 6, secondary frequency modulation:
and (3) performing probe test on the structure obtained in the step (5), performing secondary frequency modulation by using an ion beam polishing machine according to the center frequency obtained by the test, adjusting the frequency of the filter to be the target frequency, and then packaging the filter by using a wafer level packaging film packaging process (WLP).
Comparative example
preparing an AlN film with the thickness of 130nm on a Mo upper electrode layer of an FBAR resonator (a multi-layer structure of a sacrificial layer/a seed layer/a lower electrode layer/a piezoelectric layer/an upper electrode layer) by adopting a magnetron sputtering method, and taking the AlN film as a frequency modulation layer; the specific process is as follows: taking an FBAR resonator as a substrate, al as a target, taking the substrate as an anode, taking the target as a cathode, and Ar and N 2 Under the action of high voltage between two plates, ar gas generates glow discharge to generate plasma, positive ions in the ion body can accelerate to bombard the surface of cathode target material with negative electricity, al atoms close to the surface obtain energy and separate from the target material to enter vacuum, and the sputtered Al atoms reach the surface of the substrate and are connected with N 2 Reacting to generate AlN; wherein Ar and N 2 The flow ratio of (2) is 1:3, sputtering air pressure of 1×10 -3 Pa, sputtering power is 7000W;
step 2, patterning the frequency modulation layer:
patterning the frequency modulation layer obtained in the step 1 by adopting a photoetching process; the method comprises the following steps: carrying out AlN film prepared in the step 1Gluing, exposing and developing, removing AlN outside the photoresist protection area through etching, and finally removing photoresist in the pattern area to complete the patterning of the frequency modulation layer; wherein the thickness of the photoresist is about 4 mu m when the AlN film is coated with the photoresist, and the etching gas is Cl when the AlN film is etched 2 、BCl 3 Mixed gas with Ar, cl 2 、BCl 3 The flow ratio of the etching gas to Ar is 1:2:2, and the etching gas pressure is 0.3Pa;
step 3, frequency modulation:
and (3) performing probe test on the structure obtained in the step (2), performing frequency modulation by using an ion beam polishing machine according to the center frequency obtained by the test, adjusting the frequency of the filter to be a target frequency, and then packaging the filter by using a wafer level packaging film packaging process (WLP).
FIG. 1 is a graph showing the thickness change of an AlN thin film having an initial thickness of 400nm measured by a dielectric thin film measuring instrument after immersing in a developer for 10 minutes; FIG. 2 shows the thickness change of the ScAlN thin film having an initial thickness of 400nm measured by a dielectric thin film measuring instrument after immersing in a developer for 10 minutes. As can be seen from fig. 1 and 2, after the AlN film is immersed in the developing solution for 10 minutes, the thickness of the film is reduced by about 105nm, and the etching rate is about 10.5nm/min; the thickness of the ScAlN film is unchanged, and no corrosion basically occurs.
Fig. 3 is a graph showing S-parameter variation of the FBAR filter of the comparative example before and after Wafer Level Packaging (WLP); as can be seen from fig. 3, in the FBAR filter of the comparative example, the center frequency was changed from 3084MHz before wafer level packaging (before WLP) to 3091MHz after wafer level packaging (after WLP), and the frequency was about 7MHz higher overall.
Fig. 4 is a graph showing S-parameter variation curves of an FBAR filter obtained by the method according to the embodiment of the present invention before and after Wafer Level Packaging (WLP); as can be seen from fig. 4, there is almost no significant shift in the overall frequency between the pre-wafer level package (before WLP) and the post-wafer level package (after WLP), and the center frequency is 3103MHz.
The foregoing is only illustrative of the preferred embodiments of the present invention, but the scope of the present invention is not limited thereto, and any modifications and equivalents made by those skilled in the art within the spirit and principles of the present invention shall fall within the scope of the present invention.
Claims (3)
1. A method for adjusting and controlling the center frequency of an FBAR filter, comprising the steps of:
step 1, preparing a frequency modulation layer:
preparing an AlN film with the thickness of 50-150 nm on an upper electrode layer of an FBAR resonator by adopting a magnetron sputtering method, and taking the AlN film as a frequency modulation layer;
step 2, patterning the frequency modulation layer:
patterning the frequency modulation layer obtained in the step 1 by adopting a photoetching process;
step 3, primary frequency modulation:
performing probe test on the structure obtained in the step 2, performing primary frequency modulation by adopting an ion beam polishing machine according to the center frequency obtained by the test, and adjusting the frequency of the filter to be 20-50 MHz higher than the target frequency;
step 4, preparation of an isolation layer:
depositing a ScAlN film with the thickness of 25-100 nm on the frequency modulation layer obtained after the treatment in the step 3 by adopting a magnetron sputtering method to serve as an isolation layer;
and 5, patterning the isolation layer:
patterning the isolation layer obtained in the step 4 by adopting a photoetching process;
step 6, secondary frequency modulation:
and (3) performing probe test on the structure obtained in the step (5), performing secondary frequency modulation by adopting an ion beam polishing machine according to the center frequency obtained by the test, adjusting the frequency of the filter to be the target frequency, and then packaging the filter by adopting a wafer-level packaging film packaging process.
2. The method of claim 1, wherein the FBAR resonator in step 1 comprises a sacrificial layer, a seed layer, a lower electrode layer, a piezoelectric layer and an upper electrode layer sequentially disposed.
3. The method for controlling the center frequency of an FBAR filter according to claim 1, wherein the ScAlN film in the step 4 comprises 10-30wt% scandium.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110224685A (en) * | 2019-05-13 | 2019-09-10 | 电子科技大学 | A kind of monocrystal thin films bulk accoustic wave filter and its fine machining method |
| CN110729979A (en) * | 2019-09-30 | 2020-01-24 | 中国电子科技集团公司第二十六研究所 | Wafer-level packaging method and structure of film bulk acoustic wave filter |
| CN111162746A (en) * | 2020-01-18 | 2020-05-15 | 杭州见闻录科技有限公司 | Flat piezoelectric layer structure of bulk acoustic wave resonator and manufacturing process |
| CN112242826A (en) * | 2020-10-14 | 2021-01-19 | 瑞声声学科技(深圳)有限公司 | Film bulk acoustic resonator |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2013175985A1 (en) * | 2012-05-22 | 2013-11-28 | 株式会社村田製作所 | Bulk wave resonator |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110224685A (en) * | 2019-05-13 | 2019-09-10 | 电子科技大学 | A kind of monocrystal thin films bulk accoustic wave filter and its fine machining method |
| CN110729979A (en) * | 2019-09-30 | 2020-01-24 | 中国电子科技集团公司第二十六研究所 | Wafer-level packaging method and structure of film bulk acoustic wave filter |
| CN111162746A (en) * | 2020-01-18 | 2020-05-15 | 杭州见闻录科技有限公司 | Flat piezoelectric layer structure of bulk acoustic wave resonator and manufacturing process |
| CN112242826A (en) * | 2020-10-14 | 2021-01-19 | 瑞声声学科技(深圳)有限公司 | Film bulk acoustic resonator |
Non-Patent Citations (2)
| Title |
|---|
| Fabrication and Characteristics of Thin Film Bulk Acoustic Resonators with Highly c-Axis Oriented AlN Films;Gu Hao-Shuang等;《Chinese Physics Letters》;第23卷(第11期);3111-3114 * |
| GaN微电子学的新进展;赵正平;《半导体技术》;第45卷(第1期);1-16,36 * |
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