CN113872558A - Resonator manufacturing method and resonator - Google Patents
Resonator manufacturing method and resonator Download PDFInfo
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- CN113872558A CN113872558A CN202111152610.XA CN202111152610A CN113872558A CN 113872558 A CN113872558 A CN 113872558A CN 202111152610 A CN202111152610 A CN 202111152610A CN 113872558 A CN113872558 A CN 113872558A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 129
- 238000000034 method Methods 0.000 claims abstract description 48
- 239000000463 material Substances 0.000 claims description 51
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 238000000137 annealing Methods 0.000 claims description 15
- 239000007772 electrode material Substances 0.000 claims description 14
- 238000012545 processing Methods 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- 238000007517 polishing process Methods 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims 2
- 239000000945 filler Substances 0.000 claims 1
- 230000008569 process Effects 0.000 description 24
- 238000010586 diagram Methods 0.000 description 19
- 230000000694 effects Effects 0.000 description 7
- 239000005360 phosphosilicate glass Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005224 laser annealing Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
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- 239000011733 molybdenum Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
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- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02047—Treatment of substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The embodiment of the invention discloses a resonator and a manufacturing method thereof. The method comprises the following steps: a first groove is formed in the first surface of the substrate; forming a first lower electrode on a first surface of a substrate; the first lower electrode comprises an opening, the depth of the opening is equal to the thickness of the first lower electrode, and the vertical projection of the opening on the substrate is not overlapped with the first groove; forming a second lower electrode, wherein the vertical projection of the first part of the second lower electrode on the substrate is superposed with the vertical projection of the opening on the substrate; forming a second sacrificial layer, wherein the second sacrificial layer only covers the first part, and the thickness of the second sacrificial layer is equal to the depth of the opening; sequentially forming a piezoelectric layer and an upper electrode layer on one side of the second sacrificial layer far away from the substrate; the first sacrificial layer and the second sacrificial layer are processed to form an air bridge between the first portion and the piezoelectric layer and a cavity between the substrate and the lower electrode. The embodiment of the invention can realize controllable thickness of the air bridge and reduce the difficulty of the manufacturing process of the resonator.
Description
Technical Field
The embodiment of the invention relates to the technical field of semiconductors, in particular to a manufacturing method of a resonator and the resonator.
Background
Resonators have been widely used in many fields. For example, in the field of wireless communications, resonators of Radio Frequency (RF) and microwave frequencies are used as filters to improve the reception and transmission of signals. With the demand for miniaturization and miniaturization of communication devices, resonators based on the piezoelectric effect have been proposed. In a resonator based on the piezoelectric effect, an acoustic resonance mode is generated in a piezoelectric material, in which an acoustic wave is converted into a radio wave. One type of piezoelectric resonator is a bulk acoustic resonator (BAW), which has the advantages of small size, high operating frequency, compatibility with Integrated Circuit (IC) fabrication processes, and the like. Ideally, the bulk acoustic resonator excites only longitudinal modes in the thickness direction, e.g., TE modes, which are longitudinal mechanical waves having a propagation vector along the propagation direction. The TE mode ideally propagates along the thickness direction of the piezoelectric layer in the acoustic resonator. However, in addition to the desired TE mode, there are also transverse modes in the acoustic resonator. These transverse modes propagate in a horizontal direction along the surface of the piezoelectric layer. Thus, the transverse mode adversely affects the quality factor (Q) of the acoustic resonator. Currently, an air bridge is usually provided in the resonator to suppress the lateral mode.
In addition, the resonant frequency of the bulk acoustic resonator also changes with changes in temperature. Although the thickness expansion or contraction of the layers of the wave resonator due to temperature change affects the resonance frequency, the temperature change of the acoustic wave propagation velocity in the layers is the main cause of the temperature change of the resonance frequency of the wave resonator. At present, the resonator is usually provided with a temperature compensation structure to compensate the influence caused by temperature change.
The thickness of the air bridge and the thickness of the temperature compensation layer in the resonator have certain importance to the design, but the prior art forms the air bridge and/or the temperature compensation layer by an etching method, and the thicknesses of the air bridge and the temperature compensation layer cannot be accurately controlled due to the limitation of the process.
Disclosure of Invention
The invention provides a manufacturing method of a resonator and the resonator, which are used for realizing the controllable thickness of an air bridge and reducing the difficulty of the manufacturing process of the resonator.
In a first aspect, an embodiment of the present invention provides a method for manufacturing a resonator, including:
providing a substrate, wherein a first groove is formed in the first surface of the substrate, and a first sacrificial layer is filled in the first groove;
forming a first lower electrode on a first surface of the substrate; wherein the first lower electrode comprises an opening, the depth of the opening along the thickness direction of the first lower electrode is equal to the thickness of the first lower electrode, and the vertical projection of the opening on the substrate does not overlap with the first groove;
forming a second lower electrode on one side of the first lower electrode far away from the substrate, wherein the second lower electrode comprises a first part, and the vertical projection of the first part on the substrate is coincident with the vertical projection of the opening on the substrate;
forming a second sacrificial layer on one side of the second lower electrode far away from the substrate, wherein the second sacrificial layer only covers the first part, and the thickness of the second sacrificial layer is equal to the depth of the opening;
sequentially forming a piezoelectric layer and an upper electrode layer on one side, far away from the substrate, of the second sacrificial layer, wherein the piezoelectric layer covers the second lower electrode and the second sacrificial layer;
the first sacrificial layer and the second sacrificial layer are processed to form an air bridge between the first portion and the piezoelectric layer and a cavity between the substrate and the first lower electrode.
Optionally, forming a second lower electrode on a side of the first lower electrode away from the substrate further includes:
forming a second groove on the second lower electrode, wherein the vertical projection of the second groove on the substrate is positioned in the first groove;
before the piezoelectric layer and the upper electrode layer are sequentially formed on the side of the second sacrificial layer away from the substrate, the method further comprises the following steps:
and forming a temperature compensation layer on one side of the second lower electrode, which is far away from the substrate, wherein the temperature compensation layer is positioned in the second groove, and the thickness of the temperature compensation layer is equal to the depth of the second groove.
Optionally, the forming a first lower electrode on the first surface of the substrate further includes:
forming a third groove on the first lower electrode, wherein the vertical projection of the third groove on the substrate is positioned in the first groove;
the second lower electrode further comprises a second portion, the second portion being located within the third recess;
before the piezoelectric layer and the upper electrode layer are sequentially formed on the side of the second sacrificial layer away from the substrate, the method further comprises the following steps:
and forming a temperature compensation layer on one side of the second lower electrode, which is far away from the substrate, wherein the temperature compensation layer only covers the second part, and the thickness of the temperature compensation layer is equal to the depth of the third groove.
Optionally, the depth of the third groove is less than or equal to the depth of the opening.
Optionally, the first sacrificial layer and/or the second sacrificial layer are shrink material layers; processing the first sacrificial layer and the second sacrificial layer includes: annealing the first sacrificial layer and/or the second sacrificial layer;
or, the second sacrificial layer and the temperature compensation layer are made of the same material, and processing the first sacrificial layer and the second sacrificial layer includes: and removing the first sacrificial layer and/or the second sacrificial layer by using etching liquid.
Optionally, the second lower electrode is deposited to form the first portion and the second portion simultaneously.
Optionally, forming a first lower electrode on the first surface of the substrate includes:
forming a seed layer;
forming a first electrode material layer;
and patterning the first electrode material layer and the seed layer in sequence to form the first lower electrode with an opening, or patterning the first electrode material layer to form the first lower electrode with an opening.
Optionally, the forming a temperature compensation layer on a side of the second lower electrode away from the substrate includes:
forming a filling layer on one side of the second lower electrode, which is far away from the substrate, wherein the filling layer covers the second lower electrode;
and thinning the filling layer to form the temperature compensation layer.
Optionally, the filling layer is thinned by a chemical mechanical polishing process.
Optionally, the material used for the first lower electrode is different from the material used for the second lower electrode;
the thickness range of the first lower electrode comprises 500-3000A, and the thickness range of the second lower electrode comprises 1000-3000A.
Optionally, the material of the temperature compensation layer includes phosphosilicate glass or silicon dioxide.
Optionally, sequentially forming a piezoelectric layer and an upper electrode layer on a side of the second sacrificial layer away from the substrate includes:
a microstructure for reducing propagation of mechanical waves in a horizontal direction is provided on the upper electrode layer;
the microstructures include at least one of bridge structures, wing structures, raised structures, and recessed structures.
In a second aspect, an embodiment of the present invention further provides a resonator, including:
the device comprises a substrate, wherein a first groove is formed in a first surface of the substrate;
a first lower electrode disposed on the first surface of the substrate; wherein the first lower electrode includes an opening having a depth equal to a thickness of the first lower electrode in a thickness direction of the first lower electrode; the vertical projection of the opening on the substrate is not overlapped with the first groove;
the second lower electrode is arranged on one side, away from the substrate, of the first lower electrode and comprises a first part, and the vertical projection of the first part on the substrate is coincident with the vertical projection of the opening on the substrate;
and a piezoelectric layer and an upper electrode layer disposed on a side of the second lower electrode remote from the substrate; the upper electrode layer is arranged on one side of the piezoelectric layer far away from the substrate, an air bridge is arranged between the first part and the piezoelectric layer, and the thickness of the air bridge is equal to the depth of the first lower electrode along the thickness direction of the first lower electrode.
Optionally, the second lower electrode includes a second groove, and a vertical projection of the second groove on the substrate is located in the first groove;
the resonator further comprises a temperature compensation layer arranged on one side, far away from the substrate, of the second lower electrode, the temperature compensation layer is located in the second groove, and the thickness of the temperature compensation layer is equal to the depth of the second groove.
Optionally, the first lower electrode includes a third groove, and a vertical projection of the third groove on the substrate is located in the first groove;
the second lower electrode comprises a second portion, and the second portion is located in the third groove; (ii) a
The resonator further comprises a temperature compensation layer arranged on one side, far away from the substrate, of the second lower electrode, wherein the temperature compensation layer only covers the second part, and the thickness of the temperature compensation layer is equal to the depth of the third groove.
Optionally, the depth of the third groove is less than or equal to the depth of the opening.
Optionally, the resonator further includes: a seed layer between the first lower electrode and the substrate.
Optionally, the material used for the first lower electrode is different from the material used for the second lower electrode;
the thickness range of the first lower electrode comprises 500-3000A, and the thickness range of the second lower electrode comprises 1000-3000A.
Optionally, the material of the temperature compensation layer includes phosphosilicate glass or silicon dioxide.
Optionally, a microstructure for reducing mechanical wave propagation in a horizontal direction is disposed on the upper electrode layer;
the microstructures include at least one of bridge structures, wing structures, raised structures, and recessed structures.
The resonator of the embodiment of the invention adopts the form of two layers of lower electrodes of a first lower electrode and a second lower electrode, an opening is arranged on the first lower electrode, so that the surface of a first part, which is positioned in the opening, of the second lower electrode, far away from a substrate is lower than the surface of the other area, which is positioned in the opening, of the second lower electrode, far away from the substrate, of the second lower electrode, the first part is covered by a second sacrificial layer, and the second sacrificial layer on the surface of the first part is processed after film layers such as a piezoelectric layer, an upper electrode and the like are formed, so that an air bridge between the first part and the piezoelectric layer is formed, the thickness of the air bridge is equal to that of the second sacrificial layer covered on the surface of the first part and equal to that of the first lower electrode or equal to that of the removed second sacrificial layer, therefore, the thickness of the air bridge in the resonator provided by the embodiment can be adjusted by adjusting the thickness of the first lower electrode or adjusting the thickness of the removed second sacrificial layer, and the thickness of the air bridge can be controlled, and the forming process is simple, the structural precision of the air bridge is improved, the compensation effect of the air bridge is improved, and therefore the quality factor of the resonator is improved.
Drawings
Fig. 1 is a flowchart of a method for manufacturing a resonator according to an embodiment of the present invention;
FIG. 2 is a schematic view of a first bottom electrode according to an embodiment of the present invention;
FIG. 3 is a schematic view of a second bottom electrode according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a second sacrificial layer according to an embodiment of the present invention;
fig. 5 is a schematic diagram of a piezoelectric layer and an upper electrode provided by an embodiment of the present invention;
FIG. 6 is a schematic diagram of a resonator provided by an embodiment of the present invention;
FIG. 7 is a schematic view of another bottom electrode provided in accordance with an embodiment of the present invention;
FIG. 8 is a schematic diagram of another resonator provided by embodiments of the present invention;
FIG. 9 is a schematic view of another first bottom electrode according to an embodiment of the present invention;
FIG. 10 is a schematic view of another second bottom electrode according to an embodiment of the present invention;
FIG. 11 is a schematic diagram of yet another resonator provided by an embodiment of the present invention;
FIG. 12 is a schematic diagram illustrating a process of forming a temperature compensation material layer according to an embodiment of the present invention;
FIG. 13 is a schematic view of a temperature compensating material layer provided by an embodiment of the present invention;
FIG. 14 is a schematic view of a first lower electrode according to another embodiment of the present invention;
FIG. 15 is a schematic diagram of yet another resonator provided by an embodiment of the invention;
fig. 16 is a schematic diagram of another resonator provided in an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
An embodiment of the present invention provides a method for manufacturing a resonator, and fig. 1 is a flowchart of the method for manufacturing a resonator provided in the embodiment of the present invention, and with reference to fig. 1, the method includes:
s110, providing a substrate, wherein a first groove is formed in the first surface of the substrate, and a first sacrificial layer is filled in the first groove.
S120, forming a first lower electrode on the first surface of the substrate; wherein the first lower electrode includes an opening having a depth equal to a thickness of the first lower electrode in a thickness direction of the first lower electrode; the vertical projection of the opening on the substrate is not overlapped with the first groove.
Fig. 2 is a schematic view of a first lower electrode according to an embodiment of the present invention, and referring to fig. 2, a first groove 11 may be formed in a substrate 10 through a photolithography process, and a material of a first sacrificial layer 12 may include phosphosilicate glass (PSG), which schematically includes 8% of phosphorus and 92% of silicon dioxide. Finally, a cavity may be formed by removing or thinning the first sacrificial layer 12 in the first recess 11. The cavity is used for reflecting energy, so that energy loss is reduced, and the quality factor Q of the resonator is improved. The shape of the first groove 11 may be set as desired, and for example, may be set as a groove having an inverted trapezoidal cross section as shown in fig. 2.
The material of the first lower electrode 20 may include molybdenum Mo or tungsten W. When forming the first lower electrode 20, a first material layer may be formed on the first surface of the substrate 10, a photoresist layer is disposed on the surface of the first material layer, the photoresist layer is subjected to photolithography, the first material layer is etched to form the opening 21, and finally the photoresist layer is removed. The etching may be dry etching or wet etching, and this embodiment is not particularly limited. In addition, the shape of the opening 21 is not particularly limited in this embodiment, and may be set according to the shape of the air bridge.
And S130, forming a second lower electrode on one side of the first lower electrode, which is far away from the substrate, wherein the second lower electrode comprises a first part, and the vertical projection of the first part on the substrate is superposed with the vertical projection of the opening on the substrate.
Fig. 3 is a schematic diagram of a second bottom electrode according to an embodiment of the present invention, and referring to fig. 3, a first portion 31 of the second bottom electrode 30 is located in the opening 21.
And S140, forming a second sacrificial layer on one side of the second lower electrode, which is far away from the substrate, wherein the second sacrificial layer only covers the first part, and the thickness of the second sacrificial layer is equal to the depth of the opening.
Fig. 4 is a schematic diagram of a second sacrificial layer according to an embodiment of the invention, and referring to fig. 4, the second sacrificial layer 400 covers the first portion 31 of the second lower electrode 30. The thickness of the second sacrificial layer 400 is equal to the depth of the opening 21, and may be such that the upper surface of the second sacrificial layer 400 is flush with the surface of the second lower electrode 30, apart from the first portion 31, away from the substrate 10.
S150, sequentially forming a piezoelectric layer and an upper electrode layer on one side, far away from the substrate, of the second sacrificial layer, wherein the piezoelectric layer covers the second lower electrode and the second sacrificial layer.
Fig. 5 is a schematic diagram of a piezoelectric layer and an upper electrode according to an embodiment of the present invention, and referring to fig. 5, the thickness uniformity requirement of the piezoelectric layer 50 is less than 1%, so as to ensure that the piezoelectric layer 50 has high performance. The material used for the upper electrode layer 60 may include Mo or W, etc.
And S160, processing the first sacrificial layer and the second sacrificial layer to form an air bridge between the first part and the piezoelectric layer and a cavity between the substrate and the first lower electrode.
Fig. 6 is a schematic diagram of a resonator according to an embodiment of the present invention, and referring to fig. 6, after the second sacrificial layer covered by the first portion 31 is removed, a gap is formed between the first portion 31 and the piezoelectric layer 50, and the gap is an air bridge 80. The air bridge 80 can avoid energy loss caused by a transverse mode and improve the quality factor Q of the resonator. The processing of the first and second sacrificial layers may include removing the first and second sacrificial layers, or thinning the second and first sacrificial layers. For example, after the second sacrificial layer is removed, the thickness of the air bridge is equal to the thickness of the second sacrificial layer covered on the surface of the first portion and equal to the thickness of the first lower electrode, so that the thickness of the air bridge can be adjusted by adjusting the thickness of the first lower electrode, or the thickness of the air bridge is equal to the thickness of the removed second sacrificial layer by thinning the second sacrificial layer, and the thickness of the air bridge can be adjusted according to the thickness of the removed second sacrificial layer.
The resonator of the embodiment of the invention adopts the form of two layers of lower electrodes of a first lower electrode and a second lower electrode, an opening is arranged on the first lower electrode, so that the surface of a first part, which is positioned in the opening, of the second lower electrode, far away from a substrate is lower than the surface of the other area, which is positioned in the opening, of the second lower electrode, far away from the substrate, of the second lower electrode, the first part is covered by a second sacrificial layer, and the second sacrificial layer on the surface of the first part is processed after film layers such as a piezoelectric layer, an upper electrode and the like are formed, so that an air bridge between the first part and the piezoelectric layer is formed, the thickness of the air bridge is equal to that of the second sacrificial layer covered on the surface of the first part and equal to that of the first lower electrode or equal to that of the removed second sacrificial layer, therefore, the thickness of the air bridge in the resonator provided by the embodiment can be adjusted by adjusting the thickness of the first lower electrode or adjusting the thickness of the removed second sacrificial layer, and the thickness of the air bridge can be controlled, and the forming process is simple, the structural precision of the air bridge is improved, the compensation effect of the air bridge is improved, and therefore the quality factor of the resonator is improved.
Fig. 7 is a schematic view of another bottom electrode provided in an embodiment of the present invention, and optionally, referring to fig. 7, the forming of the second bottom electrode 30 on the side of the first bottom electrode 20 away from the substrate 10 further includes:
forming a second groove 32 on the second lower electrode 30, wherein a vertical projection of the second groove 32 on the substrate 10 is located in the first groove 11;
fig. 8 is a schematic diagram of another resonator provided in an embodiment of the present invention, and referring to fig. 8, before sequentially forming a piezoelectric layer 50 and an upper electrode layer 60 on a side of the second sacrificial layer away from the substrate 10, the resonator further includes:
a temperature compensation layer 70 is formed on a side of the second lower electrode 30 away from the substrate 10, the temperature compensation layer 70 is located in the second groove 32, and a thickness of the temperature compensation layer 70 is equal to a depth of the second groove 32.
Specifically, the temperature compensation layer 70 can compensate for the effect of temperature variation on the resonator, and a material with positive temperature coefficient can be used for the temperature compensation layer 70. The thickness of the temperature compensation layer 70 can be adjusted by adjusting the depth of the second groove 32, so that the thickness of the temperature compensation layer in the resonator provided by the embodiment is controllable, the forming process is simple, the structural precision of the temperature compensation layer is improved, the compensation effect of the temperature compensation layer is improved, and the quality factor of the resonator is improved.
Fig. 9 is a schematic view of another first lower electrode provided in an embodiment of the present invention, and fig. 10 is a schematic view of another second lower electrode provided in an embodiment of the present invention, and referring to fig. 9 and 10, optionally, the forming of the first lower electrode 20 on the first surface of the substrate 10 further includes:
forming a third groove 22 on the first lower electrode 20, wherein a vertical projection of the third groove 22 on the substrate is located in the first groove 11;
the second lower electrode 30 further includes a second portion 33, the second portion 33 being located within the third recess 22.
Fig. 11 is a schematic diagram of another resonator provided in an embodiment of the present invention, and referring to fig. 11, before sequentially forming a piezoelectric layer 50 and an upper electrode layer 60 on a side of a second sacrificial layer away from a substrate 10, the resonator further includes:
a temperature compensation layer 70 is formed on a side of the second lower electrode 30 away from the substrate 10, the temperature compensation layer 70 covers only the second portion 33, and a thickness of the temperature compensation layer 70 is equal to a depth of the third groove 22.
Specifically, the opening 21 and the third groove 22 may be etched at the same time, the depth of the third groove 22 may be the same as the depth of the opening 21, that is, equal to the thickness of the first lower electrode 20, the depth of the third groove 22 may also be different from the depth of the opening 21, and the specific depth of the third groove 22 may be set according to the thickness of the temperature compensation layer 70. The opening 21 is used for forming the air bridge 80, the third groove 22 is used for forming the temperature compensation layer 70, in this embodiment, two layers of lower electrodes of the first lower electrode 20 and the second lower electrode 30 are arranged, the opening 21 and the third groove 22 are formed by etching the first lower electrode 20, so that after the second lower electrode 30 is subsequently formed, a height difference exists between the surface of the second lower electrode 30, which is far away from the substrate 10, of the first portion 31 corresponding to the opening 21 and the surface of the second portion 33 corresponding to the third groove 22, which is far away from the substrate 10, and the surface of the other area of the second lower electrode 30, which is far away from the substrate 10, film layers such as the temperature compensation layer 70, the piezoelectric layer 50 and the upper electrode layer 60 are subsequently formed, the second sacrificial layer on the surface of the first portion 31 is processed, after the air bridge 80 and the temperature compensation layer 70 are formed, the thickness of the air bridge 80 is equal to the thickness of the removed second sacrificial layer, the thickness of the temperature compensation layer 70 is equal to the depth of the third groove 22, the thickness of the air bridge 80 and the thickness of the temperature compensation layer 70 can be adjusted by adjusting the thickness of the removed second sacrificial layer and the thickness of the third groove 22, so that the thicknesses of the air bridge 80 and the temperature compensation layer 70 can be adjusted.
Illustratively, when the second sacrificial layers are all removed, the thickness of the air bridge 80 is equal to the depth of the opening 21 and equal to the thickness of the first lower electrode 20, the thickness of the temperature compensation layer 70 is equal to the depth of the third groove 22, and the thickness of the air bridge 80 and the thickness of the temperature compensation layer 70 can be adjusted by adjusting the thickness of the first lower electrode 20 and the depth of the third groove 22, so that the thicknesses of the air bridge 80 and the temperature compensation layer 70 can be adjusted, the implementation method is simple, the process is simple, and the process cost is reduced.
Optionally, the depth of the third groove 22 is less than or equal to the depth of the opening 21.
Specifically, the depth of the third groove 22 may be set according to the thickness of the temperature compensation layer 70, and the embodiment is not particularly limited.
Alternatively, the depth of the third recess 22 is equal to the depth of the opening 21, i.e., the depth of the third recess 22 is equal to the thickness of the first lower electrode 20, and the thickness of the air bridge 80 is equal to the thickness of the temperature compensation layer 70. In this embodiment, the thicknesses of the air bridge 80 and the temperature compensation layer 70 can be adjusted simultaneously by adjusting the thickness of the first lower electrode 20, and the depths of the third groove 22 and the opening 21 are the same, so that the third groove 22 and the opening 21 can be formed simultaneously by using a photolithography process, thereby reducing the process difficulty.
Optionally, the first sacrificial layer and/or the second sacrificial layer are shrink material layers; processing the first sacrificial layer and the second sacrificial layer includes: and annealing the first sacrificial layer and/or the second sacrificial layer.
Specifically, the shrinkable material refers to a material having a property of shrinking under a specific condition. The shrink material may be a porous bulk material such as amorphous silicon or low temperature SiN (i.e., SiN grown at a temperature of 300 c to 500 c), etc. In addition, the shrinking material can also be a material containing volatile substances, such as SiO2 containing moisture (which can be achieved by adjusting the hydrogen content during the growth of SiO 2), and the like.
The treatment of the first sacrificial layer and the second sacrificial layer may be a high temperature treatment, preferably an annealing operation, wherein the annealing operation may be a pipe annealing (spike annealing), a spike annealing (laser annealing), a laser annealing (laser annealing), or a flash annealing (flash annealing). If the high temperature anneal is a tube anneal, the anneal temperature ranges from 300 ℃ to 1100 ℃, and the anneal time typically does not exceed 10 hours, e.g., 3 hours, 5 hours, 8 hours, etc. If the high temperature treatment is spike annealing, the annealing temperature ranges from 650 ℃ to 1300 ℃ and the annealing time is usually not more than 20 seconds, e.g., 5 seconds, 10 seconds, 15 seconds, etc. If the high temperature process is a laser anneal or a flash lamp anneal, the anneal temperature ranges from 700 ℃ to 1500 ℃, and the anneal duration is typically no more than 20 milliseconds, such as 5 milliseconds, 10 milliseconds, 15 milliseconds, and the like. Particularly, when the shrinkage material layer is treated by the second-order or even millisecond-order annealing process, the formation time of the air gap can be greatly shortened, thereby greatly improving the production efficiency. It will be appreciated by those skilled in the art that the annealing operation is only a preferred embodiment and that in other embodiments other high temperature processes that can cause the layer of shrink material to shrink in volume are also suitable for use in the present invention.
Optionally, the second sacrificial layer and the temperature compensation layer are made of the same material, and processing the first sacrificial layer and the second sacrificial layer includes: and removing the first sacrificial layer and/or the second sacrificial layer by using etching liquid.
Specifically, the first sacrificial layer and the second sacrificial layer may be removed using a solution such as hydrogen fluoride. The thickness of the air bridge 80 formed after the second sacrificial layer is removed is equal to the depth of the opening 21, namely equal to the thickness of the first lower electrode 20, the thickness of the air bridge 80 and the thickness of the temperature compensation layer 70 can be adjusted by adjusting the thickness of the first lower electrode 20, the implementation mode is simple, the process is simple, and the process cost is reduced.
Optionally, the second lower electrode is deposited to form the first portion and the second portion simultaneously.
Specifically, the entire layer of the second lower electrode with uniform thickness can be deposited on the surface of the first lower electrode, and the uniformity requirement of the second lower electrode is less than 1%.
Fig. 12 is a schematic diagram of a forming process of a temperature compensation material layer according to an embodiment of the present invention, and fig. 13 is a schematic diagram of a temperature compensation material layer according to an embodiment of the present invention, and referring to fig. 12 and 13, optionally, the forming of the temperature compensation layer on the side of the second lower electrode 30 away from the substrate 10 includes: forming a filling layer 41 on the side of the second lower electrode 30 away from the substrate 10, wherein the filling layer 41 covers the second lower electrode 30; the filling layer 41 is thinned to form a temperature compensation layer.
The thickness of the filling layer 41 can be 2000A-20000A, and the uniformity requirement is less than 5%, so that when the filling layer 41 is thinned, longer thinning time is not needed, the process time is shortened, and the temperature compensation layer formed after thinning has higher surface flatness.
In addition, when the second sacrificial layer and the temperature compensation layer are made of the same material, the second sacrificial layer and the temperature compensation layer can be manufactured together, and the specific process is that a filling layer can be arranged to cover the whole surface of the second lower electrode 30 away from the substrate 10, the filling layer 41 covered by the first portion 31 is reserved when the filling layer 41 is thinned, and after the piezoelectric layer and the upper electrode are formed, the filling layer 41 covering the first portion 31 is removed. At this time, the filling layer 41 requires that the etching rate of the 10% hydrogen fluoride solution is greater than 10000A/min, so as to ensure that the filling layer 41 on the surface of the first portion 31 has a faster removal rate when being subsequently removed, and improve the manufacturing efficiency of the resonator.
Fig. 14 is a schematic diagram of another first lower electrode according to an embodiment of the present invention, and optionally, a first lower electrode 20 is formed on the first surface of the substrate 10, and includes:
forming a seed layer 210;
forming a first electrode material layer;
the first electrode material layer and the seed layer 210 are sequentially patterned to form the first lower electrode 20 having the opening 21, or the first electrode material layer is patterned to form the first lower electrode 20 having the opening 21.
Specifically, the material of the seed layer 210 may be aluminum nitride or the like, and the material of the first electrode material layer may be Mo or W, and may be Mo as an example. After the seed layer 210 and the first electrode material layer are formed, a photoresist layer may be formed on the surface of the first electrode material layer, and the photoresist layer is patterned by using a photolithography process, and then the first electrode material layer and the seed layer 210 are sequentially etched. The first electrode material layer and the seed layer 210 may be etched using wet etching or dry etching.
It should be noted that when the seed layer 210 is also etched through, i.e. the opening 21 penetrates through the seed layer 210, the thickness of the air bridge is equal to the sum of the thickness of the first lower electrode 20 and the thickness of the seed layer 210.
Optionally, the filling layer is thinned by a chemical mechanical polishing process.
Specifically, due to the fact that the process controllability of the chemical mechanical polishing CMP process is high, the polishing precision is high, the chemical mechanical polishing process is adopted to thin the filling layer, the height difference between the surface of the formed temperature compensation layer, which is far away from the substrate, and the surface of the second lower electrode, which is far away from the substrate, except for the first part and the second part, is small, the surface of the temperature compensation layer and the surface of the second lower electrode, which is far away from the substrate, are flush, and the piezoelectric layer formed subsequently has high thickness uniformity. And the chemical mechanical polishing process has less damage to the surface of the second lower electrode, for example, when the second lower electrode is made of Mo material, the damage to Mo may be less than 20A.
Optionally, the material used for the first lower electrode is different from the material used for the second lower electrode;
the thickness range of the first lower electrode comprises 500-3000A, and the thickness range of the second lower electrode comprises 1000-3000A.
Specifically, the second lower electrode and the second lower electrode are made of different materials, so that the influence of the formation process of the second lower electrode on the formation process of the first lower electrode is small, and the influence on the structure of the first lower electrode when the second lower electrode is formed is avoided. In addition, the thickness range of the first lower electrode comprises 500-3000A, so that the formed air bridge and the temperature compensation layer have better compensation effect. In addition, the thickness of the second lower electrode may be set as required, and may be 1500A, 1700A, 1800A, or the like for example, and the embodiment is not particularly limited.
Optionally, the material of the temperature compensation layer comprises phosphosilicate glass or silicon dioxide.
Specifically, the temperature compensation layer formed by the material can better compensate the temperature of the resonator on one hand, and the manufacturing process of the material is easy to control and remove on the other hand, so that the temperature compensation material layer on the surface of the first part can be removed quickly, and the second lower electrode and the piezoelectric layer cannot be affected.
Fig. 15 is a schematic diagram of another resonator provided in an embodiment of the present invention, fig. 16 is a schematic diagram of another resonator provided in an embodiment of the present invention, and alternatively, referring to fig. 15 and fig. 16, a piezoelectric layer 50 and an upper electrode layer 60 are sequentially formed on a side of the second sacrificial layer away from the substrate, and the method includes:
a microstructure 61 for reducing propagation of mechanical waves in a horizontal direction is provided on the upper electrode layer 60;
Specifically, the microstructure 61 may include any one or more of a bridge structure shown in fig. 16, an airfoil structure, a convex structure and a concave structure shown in fig. 15, and the embodiment is not particularly limited.
The present embodiment also provides a resonator, and referring to fig. 6, the resonator includes:
a substrate 10, a first surface of the substrate 10 being provided with a first groove 11;
a first lower electrode 20 disposed on a first surface of the substrate 10; wherein, the first lower electrode 20 includes an opening 21, and a depth of the opening 21 in a thickness direction of the first lower electrode 20 is equal to a thickness of the first lower electrode 20; the vertical projection of the opening 21 on the substrate 10 does not overlap the first groove 11;
a second lower electrode 30 disposed on a side of the first lower electrode 20 away from the substrate 10, wherein the second lower electrode 30 includes a first portion 31, and a vertical projection of the first portion 31 on the substrate 10 coincides with a vertical projection of the opening 21 on the substrate 10;
and a piezoelectric layer 50 and an upper electrode layer 60 disposed on a side of the second lower electrode 30 away from the substrate 10; wherein, the upper electrode layer 60 is disposed on a side of the piezoelectric layer 50 away from the substrate 10, an air bridge 80 is included between the first portion 31 and the piezoelectric layer 50, and a thickness of the air bridge 80 is equal to a depth of the first lower electrode 20 along a thickness direction of the first lower electrode 20.
Alternatively, referring to fig. 8, the second lower electrode 30 includes a second groove 32, and a vertical projection of the second groove 32 on the substrate 10 is located in the first groove 11;
the resonator further comprises a temperature compensation layer 70 disposed on a side of the second lower electrode 30 away from the substrate 10, the temperature compensation layer 70 is disposed in the second recess 32, and a thickness of the temperature compensation layer 70 is equal to a depth of the second recess 32.
Alternatively, referring to fig. 11, the first lower electrode 20 includes a third recess 22, and a vertical projection of the third recess 22 on the substrate 10 is located in the first recess 11;
the second lower electrode 30 includes a second portion 33, the second portion 33 being located in the third groove 22; (ii) a
The resonator further comprises a temperature compensation layer 70 arranged on the side of the second lower electrode 30 remote from the substrate 10, the temperature compensation layer 70 only covers the second portion 33, and the thickness of the temperature compensation layer 70 is equal to the depth of the third recess 22.
Optionally, the depth of the third groove 22 is less than or equal to the depth of the opening 21.
Alternatively, referring to fig. 14, the resonator further includes: a seed layer 210, the seed layer 210 being positioned between the first lower electrode 20 and the substrate 10.
Optionally, the material used for the first lower electrode is different from the material used for the second lower electrode;
the thickness range of the first lower electrode comprises 500-3000A, and the thickness range of the second lower electrode comprises 1000-3000A.
Optionally, the material of the temperature compensation layer comprises phosphosilicate glass or silicon dioxide.
Referring to fig. 14 and 15, optionally, a microstructure 61 for reducing mechanical wave propagation in the horizontal direction is provided on the upper electrode layer 60;
The resonator provided by the embodiment and the manufacturing method of the resonator provided by any embodiment of the invention belong to the same inventive concept, have corresponding beneficial effects, and the detailed technical details in the embodiment are not shown in the manufacturing method of the resonator provided by any embodiment of the invention.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious modifications, rearrangements, combinations and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (20)
1. A method of making a resonator, comprising:
providing a substrate, wherein a first groove is formed in the first surface of the substrate, and a first sacrificial layer is filled in the first groove;
forming a first lower electrode on a first surface of the substrate; wherein the first lower electrode comprises an opening, the depth of the opening along the thickness direction of the first lower electrode is equal to the thickness of the first lower electrode, and the vertical projection of the opening on the substrate is not overlapped with the first groove;
forming a second lower electrode on one side of the first lower electrode far away from the substrate, wherein the second lower electrode comprises a first part, and the vertical projection of the first part on the substrate is coincident with the vertical projection of the opening on the substrate;
forming a second sacrificial layer on one side of the second lower electrode far away from the substrate, wherein the second sacrificial layer only covers the first part, and the thickness of the second sacrificial layer is equal to the depth of the opening;
sequentially forming a piezoelectric layer and an upper electrode layer on one side, far away from the substrate, of the second sacrificial layer, wherein the piezoelectric layer covers the second lower electrode and the second sacrificial layer;
the first sacrificial layer and the second sacrificial layer are processed to form an air bridge between the first portion and the piezoelectric layer and a cavity between the substrate and the first lower electrode.
2. The method of claim 1, wherein:
forming a second lower electrode on a side of the first lower electrode away from the substrate further comprises:
forming a second groove on the second lower electrode, wherein the vertical projection of the second groove on the substrate is positioned in the first groove;
before the piezoelectric layer and the upper electrode layer are sequentially formed on the side of the second sacrificial layer away from the substrate, the method further comprises the following steps:
and forming a temperature compensation layer on one side of the second lower electrode, which is far away from the substrate, wherein the temperature compensation layer is positioned in the second groove, and the thickness of the temperature compensation layer is equal to the depth of the second groove.
3. The method of claim 1, wherein:
forming a first lower electrode on the first surface of the substrate further comprises:
forming a third groove on the first lower electrode, wherein the vertical projection of the third groove on the substrate is positioned in the first groove;
the second lower electrode further comprises a second portion, the second portion being located within the third recess;
before the piezoelectric layer and the upper electrode layer are sequentially formed on the side of the second sacrificial layer away from the substrate, the method further comprises the following steps:
and forming a temperature compensation layer on one side of the second lower electrode, which is far away from the substrate, wherein the temperature compensation layer only covers the second part, and the thickness of the temperature compensation layer is equal to the depth of the third groove.
4. The method of claim 3, wherein:
the depth of the third groove is less than or equal to the depth of the opening.
5. A method according to claim 2 or 3, characterized in that:
the first sacrificial layer and/or the second sacrificial layer are/is a shrink material layer; processing the first sacrificial layer and the second sacrificial layer includes: annealing the first sacrificial layer and/or the second sacrificial layer;
or, the second sacrificial layer and the temperature compensation layer are made of the same material, and processing the first sacrificial layer and the second sacrificial layer includes: and removing the first sacrificial layer and/or the second sacrificial layer by using etching liquid.
6. The method of claim 3, wherein: the second lower electrode is deposited to simultaneously form the first portion and the second portion.
7. The method of claim 1, wherein forming a first lower electrode on the first surface of the substrate comprises:
forming a seed layer;
forming a first electrode material layer;
and patterning the first electrode material layer and the seed layer in sequence to form the first lower electrode with an opening, or patterning the first electrode material layer to form the first lower electrode with an opening.
8. The method of claim 2 or 3, wherein forming a temperature compensation layer on a side of the second lower electrode away from the substrate comprises:
forming a filling layer on one side of the second lower electrode, which is far away from the substrate, wherein the filling layer covers the second lower electrode;
and thinning the filling layer to form the temperature compensation layer.
9. The method of claim 8, wherein the filler layer is thinned using a chemical mechanical polishing process.
10. The method of claim 1, wherein:
the material adopted by the first lower electrode is different from the material adopted by the second lower electrode;
the thickness range of the first lower electrode comprises 500-3000A, and the thickness range of the second lower electrode comprises 1000-3000A.
11. A method according to claim 2 or 3, characterized in that:
the material of the temperature compensation layer comprises phosphorosilicate glass or silicon dioxide.
12. The method of claim 1, wherein sequentially forming a piezoelectric layer and an upper electrode layer on a side of the second sacrificial layer away from the substrate comprises:
a microstructure for reducing propagation of mechanical waves in a horizontal direction is provided on the upper electrode layer;
the microstructures include at least one of bridge structures, wing structures, raised structures, and recessed structures.
13. A resonator, comprising:
the device comprises a substrate, wherein a first groove is formed in a first surface of the substrate;
a first lower electrode disposed on the first surface of the substrate; wherein the first lower electrode includes an opening having a depth equal to a thickness of the first lower electrode in a thickness direction of the first lower electrode; the vertical projection of the opening on the substrate is not overlapped with the first groove;
the second lower electrode is arranged on one side, away from the substrate, of the first lower electrode and comprises a first part, and the vertical projection of the first part on the substrate is coincident with the vertical projection of the opening on the substrate;
and a piezoelectric layer and an upper electrode layer disposed on a side of the second lower electrode remote from the substrate; the upper electrode layer is arranged on one side of the piezoelectric layer far away from the substrate, an air bridge is arranged between the first part and the piezoelectric layer, and the thickness of the air bridge is equal to the depth of the first lower electrode along the thickness direction of the first lower electrode.
14. The resonator of claim 13, wherein:
the second lower electrode comprises a second groove, and the vertical projection of the second groove on the substrate is positioned in the first groove;
the resonator further comprises a temperature compensation layer arranged on one side, far away from the substrate, of the second lower electrode, the temperature compensation layer is located in the second groove, and the thickness of the temperature compensation layer is equal to the depth of the second groove.
15. The resonator of claim 13, wherein:
the first lower electrode comprises a third groove, and the vertical projection of the third groove on the substrate is positioned in the first groove;
the second lower electrode comprises a second portion, and the second portion is located in the third groove;
the resonator further comprises a temperature compensation layer arranged on one side, far away from the substrate, of the second lower electrode, wherein the temperature compensation layer only covers the second part, and the thickness of the temperature compensation layer is equal to the depth of the third groove.
16. The resonator of claim 15, wherein:
the depth of the third groove is less than or equal to the depth of the opening.
17. The resonator of claim 13, further comprising: a seed layer between the first lower electrode and the substrate.
18. The resonator of claim 13, wherein:
the material adopted by the first lower electrode is different from the material adopted by the second lower electrode;
the thickness range of the first lower electrode comprises 500-3000A, and the thickness range of the second lower electrode comprises 1000-3000A.
19. The resonator according to claim 14 or 15, characterized in that:
the material of the temperature compensation layer comprises phosphorosilicate glass or silicon dioxide.
20. The resonator of claim 13, wherein:
the upper electrode layer is provided with a microstructure for reducing the propagation of mechanical waves in the horizontal direction;
the microstructures include at least one of bridge structures, wing structures, raised structures, and recessed structures.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117691967A (en) * | 2024-02-04 | 2024-03-12 | 深圳新声半导体有限公司 | D-BAW air bridge structure and forming method thereof |
| CN117879535A (en) * | 2024-03-11 | 2024-04-12 | 深圳新声半导体有限公司 | BAW filter and manufacturing method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117691967A (en) * | 2024-02-04 | 2024-03-12 | 深圳新声半导体有限公司 | D-BAW air bridge structure and forming method thereof |
| CN117691967B (en) * | 2024-02-04 | 2024-06-25 | 深圳新声半导体有限公司 | D-BAW air bridge structure and forming method thereof |
| CN117879535A (en) * | 2024-03-11 | 2024-04-12 | 深圳新声半导体有限公司 | BAW filter and manufacturing method thereof |
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