CN114639765A - Micro LED display panel, manufacturing method thereof and display device - Google Patents
Micro LED display panel, manufacturing method thereof and display device Download PDFInfo
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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Abstract
The embodiment of the invention discloses a micro LED display panel, a manufacturing method thereof and a display device. In one embodiment, a micro LED display panel includes: the light-emitting device layer is arranged on the substrate and comprises a plurality of micro LED display units arranged in an array; the color conversion layer is arranged on the light emitting side of the light emitting device layer and comprises a plurality of color conversion parts which correspond to the micro LED display units one by one; and an adhesive layer disposed between the light emitting device layer and the color conversion layer; wherein the orthographic projection of the color conversion member on the substrate covers the orthographic projection of the adhesive layer on the substrate. According to the embodiment, the orthographic projection of the color conversion component on the substrate is arranged to cover the orthographic projection of the bonding layer on the substrate, so that the light-emitting device layer is not affected by the material of the bonding agent when being bonded with the color conversion layer for cutting, the cutting gap between the color conversion components corresponding to the adjacent light-emitting units is reduced, the chip utilization rate of the light-emitting device is improved, and the method has a wide application prospect.
Description
Technical Field
The invention relates to the technical field of display. And more particularly, to a micro LED display panel, a method of fabricating the same, and a display device.
Background
With the rapid development of display technology and the eager pursuit of thin, high-resolution, wide-viewing-angle and fast-response display panels, micro-Light-Emitting Diode (LED) display panels appear on the market. The most important structures of the micro LED display panel, which are distinguished from other display panels, are a light emitting device layer and a color conversion layer, and color light emission is mainly achieved by combining a light emitting device emitting light of one kind of ground wavelength with the color conversion layer together.
At present, two methods are mainly used for combining a color conversion layer with a light-emitting device, wherein the first method is to directly manufacture the color conversion layer on the light-emitting device layer, the second method is to respectively manufacture the light-emitting device layer and the color conversion layer, and then the light-emitting device layer and the color conversion layer are bonded together through an adhesive, and the latter method has high yield and is beneficial to application. However, in any method, the combination of the light emitting device and the color conversion layer needs to be cut into separate parts, and then the parts are bonded to the driving transistor of the display panel. At present, the second method is used for filling a glue material between adjacent parts, and the cutting width is large, so that the utilization rate of a chip for manufacturing a light-emitting device is low, and the product cost is high.
Disclosure of Invention
In order to achieve the purpose, the invention adopts the following technical scheme:
a first aspect of the present invention provides a micro LED display panel, comprising:
the light-emitting device layer is arranged on the substrate and comprises a plurality of micro LED display units arranged in an array;
the color conversion layer is arranged on the light emitting side of the light emitting device layer and comprises a plurality of color conversion parts which correspond to the micro LED display units one by one; and
an adhesive layer disposed between the light emitting device layer and the color conversion layer;
wherein the orthographic projection of the color conversion member on the substrate covers the orthographic projection of the adhesive layer on the substrate.
In some alternative embodiments, each color conversion member includes a plurality of quantum dot color resists and barriers defining the quantum dot color resists,
wherein the height of the retaining wall is more than or equal to 20 μm and less than or equal to 50 μm.
In some optional embodiments, the height of the retaining wall is greater than 30 μm and less than or equal to 50 μm.
In some alternative embodiments, each color conversion section includes: a first quantum dot color resistor, a second quantum dot color resistor, a third quantum dot color resistor, and a retaining wall for limiting the quantum dot color resistor, wherein an opening is arranged in the retaining wall,
the orthographic projection of the color conversion components on the substrate is rectangular, each color conversion component comprises a first quantum dot color resistor and a third quantum dot color resistor which are arranged along a first diagonal line of the rectangle, and a second quantum dot color resistor and an opening which are arranged along a second diagonal line of the rectangle, and the second quantum dot color resistors and the openings are located on two sides of the first diagonal line.
In some optional embodiments, the opening depth is greater than or equal to 2 μm and less than or equal to 30 μm, and the aperture of the opening is greater than or equal to 15 μm and less than or equal to 30 μm.
In some alternative embodiments, each color conversion component comprises: a first quantum dot color resistance, a second quantum dot color resistance, a third quantum dot color resistance, and a retaining wall for limiting the quantum dot color resistance,
wherein the orthographic projection of the color conversion components on the substrate is rectangular, each color conversion component comprises a first quantum dot color resistor and a third quantum dot color resistor which are arranged along a first diagonal of the rectangle, and a second quantum dot color resistor arranged on a second diagonal, the position on the second diagonal opposite to the second quantum dot color resistor is a solid retaining wall,
at least part of the color conversion parts in the micro LED display panel comprise supporting columns, and the orthographic projection of the supporting columns on the substrate falls into the orthographic projection of the solid retaining wall on the substrate and is not overlapped with the orthographic projection of the bonding layer on the substrate.
In some optional embodiments, the height of the support posts is greater than or equal to 1 μm and less than or equal to 10 μm.
A second aspect of the invention provides a display device comprising a micro LED display panel as described above.
A third aspect of the present invention provides a method of fabricating the micro LED display panel described above, comprising:
forming a light emitting device layer, wherein the light emitting device layer comprises a plurality of micro LED display units arranged in an array;
forming a color conversion layer including a plurality of color conversion members in one-to-one correspondence with the micro LED display units;
and forming an adhesive layer on the light-emitting side of the color conversion layer or the light-emitting device layer, and adhering the light-emitting device layer and the color conversion layer together by using the adhesive layer to form the micro LED display panel.
In some optional embodiments, forming the color conversion layer further comprises:
forming a retaining wall on the glass cover plate, wherein the height of the retaining wall is more than or equal to 20 mu m and less than or equal to 50 mu m;
forming quantum dot color resists in the areas defined by the retaining walls,
or
Forming a retaining wall on the glass cover plate;
forming quantum dot color resists in the areas defined by the retaining walls;
forming an opening in the retaining wall;
wherein the orthographic projection of the color conversion components on the substrate is rectangular, each color conversion component comprises a first quantum dot color resistance and a third quantum dot color resistance which are arranged along a first diagonal of the rectangle, and a second quantum dot color resistance and an opening which are arranged along a second diagonal of the rectangle, the second quantum dot color resistance and the opening are positioned at two sides of the first diagonal,
or
Forming a retaining wall on the glass cover plate;
forming quantum dot color resists in the areas defined by the retaining walls;
forming a supporting column on the retaining wall;
the orthographic projection of the color conversion components on the substrate is rectangular, each color conversion component comprises a first quantum dot color resistor and a third quantum dot color resistor which are arranged along a first diagonal of the rectangle, and a second quantum dot color resistor arranged on a second diagonal, and the position, opposite to the second quantum dot color resistor, on the second diagonal is a solid retaining wall;
the orthographic projection of the supporting column on the substrate falls into the orthographic projection of the solid retaining wall on the substrate and does not overlap with the orthographic projection of the bonding layer on the substrate.
The invention has the following beneficial effects:
the invention provides a micro LED display panel, a manufacturing method thereof and a display device aiming at the existing problems, and provides a light emitting device layer and a color conversion layer which are bonded by using a bonding layer, wherein the color conversion layer comprises a plurality of color conversion parts which are in one-to-one correspondence with light emitting units included in the light emitting device layer, and the orthographic projection of the bonding layer on a substrate is covered by the orthographic projection of the color conversion parts on the substrate, so that when the color conversion parts bonded with the light emitting units are cut into discrete parts, no bonding agent exists in the cutting positions between the adjacent color conversion parts, the cutting width is reduced, the distance between the adjacent units can be reduced when the light emitting units are manufactured, the chip utilization rate of the manufactured light emitting units is further improved, the product cost is reduced, and the micro LED display panel has a wide application prospect.
Drawings
The following describes embodiments of the present invention in further detail with reference to the accompanying drawings.
Fig. 1 is a schematic cross-sectional view illustrating a color conversion member and a light emitting unit bonded in a manufacturing process of a related art micro LED display panel;
FIG. 2 shows a schematic cross-sectional view of a micro LED display panel according to an embodiment of the present invention;
FIG. 3 is a schematic top view of a micro LED display panel according to an embodiment of the present invention after bonding a color conversion member and a light emitting unit during fabrication thereof;
fig. 4 shows a schematic cross-sectional view of the color conversion member and the light emitting unit after being bonded, taken along AA' in fig. 3;
FIG. 5 is a schematic top view of a micro LED display panel according to an embodiment of the present invention after bonding a color conversion member and a light emitting unit during the fabrication process;
fig. 6 shows a schematic cross-sectional view of the color conversion member and the light emitting unit after bonding, taken along BB' in fig. 3;
FIG. 7 is a schematic top view of a micro LED display panel after bonding a color conversion member and a light emitting unit during fabrication thereof according to an embodiment of the present invention;
fig. 8 shows a schematic cross-sectional view of the color conversion member and the light emitting cell after bonding, taken along CC' in fig. 3;
fig. 9 to 12 show schematic process flow diagrams of a method of fabricating a micro LED display panel according to an embodiment of the present invention.
Detailed Description
In order to more clearly illustrate the present invention, the present invention will be further described with reference to the following examples and the accompanying drawings. Like parts in the drawings are denoted by the same or similar reference numerals. It is to be understood by persons skilled in the art that the following detailed description is illustrative and not restrictive, and is not to be taken as limiting the scope of the invention.
It should be noted that, when the description "has", "includes", "including", etc. in the present invention are all open-ended, that is, when the description module "has", "includes" or "includes" the first element, the second element and/or the third element, it means that the module includes other elements in addition to the first element, the second element and/or the third element. In addition, the ordinal numbers such as "first", "second", and "third" in the present invention are not intended to limit the specific sequences, but only to distinguish the respective parts.
The terms "on … …", "on … …" and "disposed on … …" as used herein mean that one layer is formed or disposed directly on another layer, or that one layer is formed or disposed indirectly on another layer, i.e., that another layer is present between the two layers.
In addition, in the present invention, the term "disposed on the same layer" is used to mean that two layers, components, members, elements or portions may be formed by the same manufacturing process (e.g., patterning process, etc.), and the two layers, components, members, elements or portions are generally formed of the same material. For example, two or more functional layers are arranged in the same layer, which means that the functional layers arranged in the same layer can be formed by using the same material layer and using the same manufacturing process, so that the manufacturing process of the display substrate can be simplified.
In the prior art, when a micro LED display panel is manufactured, a light emitting device layer and a color conversion layer are manufactured separately and then are attached together through an adhesive. However, since the micro LED display panel needs to cut the light emitting device layer and the color conversion layer manufactured together into separate components, each of which includes a light emitting unit and a color conversion component, in the subsequent process, the separate components are bound as pixels on the driving circuit substrate of the micro LED display panel.
As a result of the research by the inventors, it was found that when the color conversion layer and the light emitting device layer are bonded together, it is necessary to apply an adhesive to either one of them to form an adhesive layer, and to apply an appropriate pressing force to the color conversion member in the color conversion layer and the light emitting element in the light emitting device layer, and then to cure the adhesive layer, as shown in fig. 1, the adhesive flowing under the pressure flows into the gap between the color conversion members, which is a reserved cutting gap. The light emitting unit is usually a discrete light emitting unit fabricated on a support plate, a color conversion member is fabricated on a glass cover plate, and after the light emitting device layer and the color conversion layer are bonded, the support plate is removed and cut at a cutting gap from above the glass cover plate. In the breaking process, both the laser cutting and the cutter wheel cutting have cutting width, the laser spot is smaller than the cutter wheel cutting, and the cutting width of the laser cutting can be reduced to 5 μm if only glass is cut. However, if the organic rubber material is cut, a cutting width of several tens of micrometers is required. Because the light-emitting units correspond to the color conversion components one to one, the larger cutting width defines the light-emitting units with larger gaps, that is, the larger the cutting width, the lower the utilization rate of the whole chip substrate when the light-emitting units are manufactured, so that the manufacturing cost of the light-emitting units is increased, and the cost of the display panel of the micro LED is increased.
In order to solve the above technical problem, referring to fig. 2, an embodiment of the present application provides a micro LED display panel, including:
a light emitting device layer disposed on the substrate 10, including a plurality of micro LED display units 20 arranged in an array;
a color conversion layer disposed on a light emitting side of the light emitting device layer, including a plurality of color conversion members 30 in one-to-one correspondence with the micro LED display units; and
an adhesive layer 40 disposed between the light emitting device layer and the color conversion layer;
here, the orthographic projection of the color conversion member 30 on the substrate 10 covers the orthographic projection of the adhesive layer 40 on the substrate 10.
In this embodiment, by providing the light emitting device layer and the color conversion layer bonded by the bonding layer, the color conversion layer includes a plurality of color conversion members corresponding to the light emitting units included in the light emitting device layer one to one, and the orthographic projection of the bonding layer on the substrate is covered by the orthographic projection of the color conversion member on the substrate, so that when the color conversion member bonded with the light emitting units is cut into discrete members, no adhesive exists at the cutting position between adjacent color conversion members, the cutting width is reduced, so that the distance between adjacent units can be reduced when the light emitting units are manufactured, the chip utilization rate for manufacturing the light emitting units is further improved, the product cost is reduced, and the light emitting device has a wide application prospect.
The structure of the micro LED display panel according to the embodiment of the present application will be described in detail with reference to specific examples.
It should be noted that the structural improvement of the micro LED display panel will directly affect the change of the adhesive layer, and the change of the adhesive layer directly affects the cutting gap reserved when the micro LED display panel is manufactured. In order to embody the structural advantages of the embodiments of the present application, the following embodiments will be described with reference to an intermediate structure in forming a micro LED display panel, that is, an intermediate structure obtained after a light emitting device layer formed on a glass cover plate and a color conversion layer formed on a support plate are adhered together via an adhesive layer and the support plate is removed.
However, it will be understood by those skilled in the art that the actual micro LED display panel is shown in fig. 2, and the pads of the light emitting units in the cut discrete components are correspondingly bonded with the pads in the driving circuit layer on the substrate 10. That is, the micro LED display panel includes a light emitting device layer formed on a substrate, the light emitting device layer including a plurality of light emitting cells 20, and a color conversion layer formed on a light emitting side of the light emitting device layer, the color conversion layer including a plurality of color conversion members 30, which are bonded together by an adhesive layer 40. Hereinafter, the intermediate structure in forming the micro LED display panel will be described with emphasis, and the overall structure will not be described again.
In a specific example, as shown with reference to fig. 3 and 4, each of the color conversion members 30 bonded to correspond to one of the light emitting units 20 includes a plurality of quantum dot color resists 31 for color-converting a single color light emitted from the light emitting unit 20 and a dam wall 32 defining the quantum dot color resists 31. In a currently common product, one color conversion component 30 includes a first quantum dot color resistor 31-1, a second quantum dot color resistor 31-2, and a third quantum dot color resistor 31-3, and the three quantum dot color resistors respectively convert light emitted by the light emitting unit 20 into red light, green light, and blue light for emission. If the color of the light generated by the light emitting unit 20 is blue, for example, the light emitting material in the light emitting unit is made of GaN material, the quantum dot color resistance that will emit blue light does not perform color conversion on the blue light. However, it should be understood by those skilled in the art that the present application is not intended to limit the number of individual quantum dot color resistances, and that the number of quantum dot color resistances may be greater if more luminescent dots are required for some products; the colors are not limited to red, green and blue, and the luminescent materials in the luminescent unit are not limited to GaN materials; in addition, the light emitting unit can also emit purple light or emit other color light when conditions allow, and the description is omitted here.
In the present example, with continued reference to fig. 4, each light emitting cell 20 includes a buffer layer 21, an N-type gallium nitride (GaN) layer 22, an N-type electrode 23, a P-type gallium nitride (GaN) layer 24, and a P-type electrode 25. A quantum well is further included between the P-type gallium nitride (GaN) layer 24 and the N-type gallium nitride (GaN) layer 22, and the buffer layer 21 may be an aluminum oxide substrate or a substrate made of other materials such as gallium nitride. When appropriate voltages are applied to the N-type electrode 23 and the P-type electrode 25, the light emitting unit 20 emits light when it is close to the light emitting side of the color conversion layer 30.
As shown with continued reference to fig. 4, each color conversion member 30 includes a quantum dot color resist 31 and a dam 32 for defining the quantum dot color resist 31. The color conversion component 30 further includes a color filter layer 33, where the color filter layer 33 includes a black matrix corresponding to the bank and a color filter corresponding to the quantum dot color resistance, and the color of the color filter corresponds to the color of the emergent light converted by the quantum dot color resistance to filter out stray light. The color filter layer 33 further includes a glass cover plate 50 thereon, and the glass cover plate 50 may serve as a protective plate for the color conversion member.
Of course, it will be understood by those skilled in the art that since the color conversion member 30 is spaced apart, in the actual manufacturing process, the layers will be formed from the near to the far side by using the glass cover plate 50 as the substrate, and after the retaining wall 32 and the quantum dot color resistor 31 are formed, the encapsulation layer 34 covering the retaining wall 32 and the quantum dot color resistor 31 will be formed.
In particular, in the embodiment, the height of the retaining wall 32 is increased, so that the height of the retaining wall 32 is much higher than the height of the quantum dot color resistor, and thus, after the encapsulating layer 34 is formed, a recessed space is still formed in the region corresponding to the quantum dot color resistor 31.
Preferably, the height of the retaining wall 32 is 20 μm or more and 50 μm or less. More preferably, the height of the retaining wall 32 is greater than 30 μm and less than or equal to 50 μm, and it should be understood that the more preferable example can ensure that the sufficient recessed space is provided in the region corresponding to the quantum dot color resistor 31 after the encapsulation layer 34 is formed.
With this arrangement, when the light emitting cells 20 in the light emitting cell layer are bonded to the color conversion members 30 in the color conversion layer in a one-to-one correspondence, the adhesive applied to the surface of the light emitting cells 20 or the color conversion members 30 will tend to flow into the recessed space formed by the raised dam walls 32 under the pressing force, thereby avoiding the formation of the adhesive layer 40 in the reserved cutting gaps between the adjacent color conversion members 30, and thus achieving an orthographic projection of the color conversion members on the substrate 10 in the micro LED display panel covering the orthographic projection of the adhesive layer 40 on the substrate 10. Further, with this arrangement, there is no influence of the adhesive when cutting is performed from the side of the glass cover plate 50 away from the color conversion member 30, and the cutting gap W can be reduced to 5 μm, which correspondingly will greatly improve the utilization rate of the chip substrate for manufacturing the light emitting unit, reduce the cost, and have a wide application prospect.
In another example, as shown with reference to fig. 5 and 6, each color conversion section 20 includes: a first quantum dot color resistor 31-1, a second quantum dot color resistor 31-2, a third quantum dot color resistor 31-3 and a retaining wall 32 for limiting the quantum dot color resistor.
The three quantum dot color resistances convert the light emitted from the light emitting unit 20 into red light, green light, and blue light, respectively, and emit them. If the color of the light generated by the light emitting unit 20 is blue, for example, the light emitting material in the light emitting unit is made of GaN material, the quantum dot color resistance to emit blue light does not perform color conversion on the blue light.
However, it should be understood by those skilled in the art that the present application is not intended to limit the emission colors of the respective quantum dot color resistances to red, green and blue, and the light emitting material in the light emitting unit is not limited to GaN material; in addition, the light emitting unit can also emit purple light or emit other color light under the condition that the condition allows, and the description is omitted.
In addition, it should be noted that the structures of the light emitting unit 20, the color filter layer 33 in the color conversion member, the glass cover plate 50, and the like in this example are similar to those in the above example, and are not described in detail here.
In particular, in this example, an opening KK is provided in the retaining wall 32. Optionally, the opening depth is greater than or equal to 2 μm and less than or equal to 30 μm, and the aperture of the opening is greater than or equal to 15 μm and less than or equal to 30 μm.
The orthographic projection of the color conversion component 30 on the substrate 10 of the micro LED display panel is rectangular, each color conversion component 30 comprises a first quantum dot color resistor 31-1 and a third quantum dot color resistor 31-3 which are arranged along a first diagonal of the rectangle, and a second quantum dot color resistor 31-2 and an opening KK which are arranged along a second diagonal of the rectangle, and the second quantum dot color resistor 31-2 and the opening KK are positioned on two sides of the first diagonal.
With this arrangement, when the light emitting units 20 in the light emitting unit layer are bonded to the color conversion members 30 in the color conversion layer in a one-to-one correspondence, the adhesive applied to the surface of the light emitting units 20 or the color conversion members 30 tends to flow into the openings KK in a close vicinity under the pressing force, so that the adhesive layer 40 is prevented from being formed in the reserved cutting gaps between the adjacent color conversion members 30, thereby realizing the effect that the orthographic projection of the color conversion members on the substrate 10 in the micro LED display panel covers the orthographic projection of the adhesive layer 40 on the substrate 10. Further, with this arrangement, there is no influence of the adhesive when cutting is performed from the side of the glass cover plate 50 away from the color conversion member 30, and the cutting gap W can be reduced to 5 μm, which correspondingly will greatly improve the utilization rate of the chip substrate for manufacturing the light emitting unit, reduce the cost, and have a wide application prospect.
In addition, it is worth mentioning that, compared with the examples of fig. 3 and 4, the example does not need to increase the thickness of the device, and is more beneficial to the thinning of the display panel.
In another example, as shown with reference to fig. 7 and 8, each color conversion section 20 includes: a first quantum dot color resistor 31-1, a second quantum dot color resistor 31-2, a third quantum dot color resistor 31-3 and a retaining wall 32 for limiting the quantum dot color resistor.
The three quantum dot color resistances respectively convert the light emitted by the light emitting unit 20 into red light, green light and blue light for emission. If the color of the light generated by the light emitting unit 20 is blue, for example, the light emitting material in the light emitting unit is made of GaN material, the quantum dot color resistance that will emit blue light does not perform color conversion on the blue light.
However, it should be understood by those skilled in the art that the present application is not intended to limit the emission colors of the respective quantum dot color resistances to red, green and blue, and the light emitting material in the light emitting unit is not limited to GaN material; in addition, the light emitting unit may also emit purple light or emit other color light if conditions allow, which is not described herein again.
In addition, it should be noted that the structures of the light emitting unit 20, the color filter layer 33 in the color conversion member, and the glass cover plate 50 in this example are similar to those in the above example, and are not repeated herein.
In particular, in the present example, the orthographic projection of the color conversion members 30 on the substrate 10 of the micro LED display panel is rectangular, each color conversion member 30 includes a first quantum dot color resist 31-1 and a third quantum dot color resist 31-3 arranged along a first diagonal of the rectangle, and a second quantum dot color resist 31-2 disposed on a second diagonal, and a position opposite to the second quantum dot color resist on the second diagonal is a solid wall.
In addition, in this example, at least part of the color conversion member 30 in the micro LED display panel includes the supporting pillars 60, and the orthographic projection of the supporting pillars 60 on the substrate 10 falls into the orthographic projection of the solid wall on the substrate 10 and does not overlap with the orthographic projection of the adhesive layer 40 on the substrate.
Alternatively, when the height of the support columns is 1 μm or more and 10 μm or less, a better supporting effect can be provided.
With this arrangement, when the light emitting units 20 in the light emitting unit layer are bonded to the color conversion members 30 in the color conversion layer in a one-to-one correspondence manner, the space between each light emitting unit 20 and the color conversion member 30 in the light emitting unit layer and the color conversion layer is supported by the support pillars 60, so that the adhesive coated on the surface of the light emitting unit 20 or the color conversion member 30 is prevented from overflowing under pressure, the adhesive layer 40 is prevented from being formed in the reserved cutting gap between the adjacent color conversion members 30, and the orthographic projection of the color conversion member on the substrate 10 in the micro LED display panel is realized to cover the orthographic projection of the adhesive layer 40 on the substrate 10. Further, with this arrangement, when cutting is performed from the side of the glass cover plate 50 away from the color conversion member 30, there is no influence of the adhesive, and the cutting gap W can be reduced to 5 μm, which correspondingly will greatly improve the utilization rate of the chip substrate for manufacturing the light emitting unit, reduce the cost, and have a wide application prospect.
In addition, it is worth mentioning that, compared with the examples of fig. 3 and 4, the example does not need to increase the thickness of the device, and is more beneficial to the thinning of the display panel.
It should be noted that, although fig. 7 and 8 show a case where the solid wall in each color conversion member 30 includes one supporting pillar 60, the present application is not limited thereto, and it is essentially only necessary that at least some color conversion members include supporting pillars, as long as support can be formed between some color conversion members and the corresponding light emitting units, and the above-mentioned purpose of avoiding formation of an adhesive layer in the reserved cutting gaps between adjacent color conversion members 30 can be achieved.
Corresponding to the micro LED display panel, the embodiments of the present application further provide a method of manufacturing the micro LED display panel described in the above embodiments, including:
forming a light emitting device layer, wherein the light emitting device layer comprises a plurality of micro LED display units arranged in an array;
forming a color conversion layer, wherein the color conversion layer comprises a plurality of color conversion parts which correspond to the micro LED display units one by one;
and forming an adhesive layer on the light-emitting side of the color conversion layer or the light-emitting device layer, and adhering the light-emitting device layer and the color conversion layer together by using the adhesive layer to form the micro LED display panel.
To further illustrate the specific fabrication method, the fabrication flow for fabricating the example involving fig. 3 and 4 is described in detail below with reference to the flowcharts shown in fig. 9 to 12.
In the method section, since the structures in the color conversion layer are formed in order on the glass cover plate as a support, the following flowchart shows a direction away from the glass cover plate 50 from the bottom to the top, contrary to the above embodiment.
In step S101, the dam 32 is formed on the glass cover 50, and the height of the dam 32 is 20 μm or more and 50 μm or less.
Specifically, referring to fig. 9, the color filter layer 33 is formed on the glass cover plate 50, and the color filter layer 33 includes a black matrix and a color filter, wherein neither the black matrix nor the color filter is formed in a region where a cutting gap between the color transfer members is to be formed.
Referring to fig. 10, a bank 32 for defining the quantum dot color resistor 31 is formed on the color filter layer 33, and the height of the bank 32 is 20 μm or more and 50 μm or less. Preferably, the height of the retaining wall 32 is greater than 30 μm and equal to or less than 50 μm.
In step S102, referring to fig. 11, the quantum dot color resists 31 are formed in the regions defined by the retaining walls 32.
It should be understood by those skilled in the art that when the quantum dot color resists 31 are quantum dot color resists converted into different colors, quantum dot color resists of different colors are formed in batches in steps, which is not described herein.
In step S103, referring to fig. 12, an encapsulation layer covering the dam wall 32 and the quantum dot color resists 31 is formed, and it is understood that the encapsulation layer also covers the cutting gaps between the color conversion members 30 at the same time for simplifying the process flow.
Thus, the step of manufacturing the color conversion member on the glass cover plate is completed. Then, an adhesive is coated on the color conversion layer or on the light-emitting side surface of the micro LED light-emitting units, and the color conversion members and the micro LED light-emitting units are bonded together in a one-to-one correspondence manner, so as to form an intermediate structure shown in fig. 4.
Then, cutting along the reserved cutting gap by adopting a laser cutting or knife wheel cutting method from the side, far away from the color conversion layer, of the glass cover plate so as to cut the color conversion component manufactured on one glass cover plate and the bonding body of the micro LED light-emitting unit into discrete components; and binding the discrete components with corresponding bonding pads on the substrate comprising the driving circuit layer, and performing necessary packaging to form the micro LED display panel.
With this arrangement, when the light emitting cells 20 in the light emitting cell layer are bonded to the color conversion members 30 in the color conversion layer in a one-to-one correspondence, the adhesive applied to the surface of the light emitting cells 20 or the color conversion members 30 will tend to flow into the recessed space formed by the raised dam walls 32 under the pressing force, thereby avoiding the formation of the adhesive layer 40 in the reserved cutting gaps between the adjacent color conversion members 30, and thus achieving an orthographic projection of the color conversion members on the substrate 10 in the micro LED display panel covering the orthographic projection of the adhesive layer 40 on the substrate 10. Further, with this arrangement, when cutting from the side of the glass cover plate 50 away from the color conversion member 30, since there is no influence of the adhesive, the cutting gap W can be reduced to 5 μm, and accordingly, the utilization rate of the chip substrate for manufacturing the light emitting unit is greatly improved, the cost is reduced, and the method has a wide application prospect.
For the examples shown in fig. 5 and 6, the layering step of forming the color conversion layer is similar to the above example, except that, after forming the quantum dot color resists in the regions defined by the banks, openings are formed in the banks,
the orthographic projection of the color conversion components on the substrate is rectangular, each color conversion component comprises a first quantum dot color resistor and a third quantum dot color resistor which are arranged along a first diagonal of the rectangle, and a second quantum dot color resistor and an opening which are arranged along a second diagonal of the rectangle, and the second quantum dot color resistors and the openings are located on two sides of the first diagonal.
With this arrangement, when the light emitting cells in the light emitting cell layer are bonded to the color conversion members in the color conversion layer in a one-to-one correspondence, the adhesive applied to the surfaces of the light emitting cells or the color conversion members will tend to flow into the openings nearby under the pressing force, thereby avoiding the formation of an adhesive layer in the reserved cutting gaps between the adjacent color conversion members 30. Furthermore, through the arrangement, the cutting gap W can be reduced to 5 μm, and correspondingly, the utilization rate of the chip substrate for manufacturing the light-emitting unit is greatly improved, the cost is reduced, and the method has a wide application prospect.
For the examples of fig. 7 and 8, the layering step of forming the color conversion layer is similar to the above example, except that the support pillars are formed on the barriers after the quantum dot color resists are formed in the regions defined by the barriers;
the orthographic projection of the color conversion components on the substrate is rectangular, each color conversion component comprises a first quantum dot color resistor and a third quantum dot color resistor which are arranged along a first diagonal of the rectangle, and a second quantum dot color resistor arranged on a second diagonal, and the position, opposite to the second quantum dot color resistor, on the second diagonal is a solid retaining wall;
the orthographic projection of the supporting column on the substrate falls into the orthographic projection of the solid retaining wall on the substrate and does not overlap with the orthographic projection of the bonding layer on the substrate.
Through this setting, when the luminescence unit in the luminescence unit layer bonds with the colour conversion part one-to-one in the colour conversion layer, because the supporting role of support column, the coating can not receive too much pressure at the binder of luminescence unit or colour conversion part surface to do not produce the excessive, and then avoid forming the adhesive linkage in the reservation cutting clearance between adjacent colour conversion part 30. Furthermore, through the arrangement, the cutting gap W can be reduced to 5 μm, correspondingly, the utilization rate of the chip substrate for manufacturing the light-emitting unit is greatly improved, the cost is reduced, and the light-emitting unit has a wide application prospect.
Based on the same inventive concept, embodiments of the present invention also provide a display device, including the micro LED display panel as described above.
Since the micro LED display panel included in the display device provided in the embodiment of the present application corresponds to the micro LED display panels provided in the above several embodiments, the foregoing embodiments are also applicable to this embodiment, and detailed description is omitted in this embodiment.
In this embodiment, the display device may be any product or component having a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a vehicle-mounted display, a digital photo frame, or a navigator, and by loading the above micro LED display panel, the display device may have a lower cost, a higher competitiveness, and a wide application prospect.
The invention provides a micro LED display panel, a manufacturing method thereof and a display device aiming at the existing problems, and provides a light emitting device layer and a color conversion layer which are bonded by using a bonding layer, wherein the color conversion layer comprises a plurality of color conversion parts which are in one-to-one correspondence with light emitting units included in the light emitting device layer, and the orthographic projection of the bonding layer on a substrate is covered by the orthographic projection of the color conversion parts on the substrate, so that when the color conversion parts bonded with the light emitting units are cut into discrete parts, no bonding agent exists in the cutting positions between the adjacent color conversion parts, the cutting width is reduced, the distance between the adjacent units can be reduced when the light emitting units are manufactured, the chip utilization rate of the manufactured light emitting units is further improved, the product cost is reduced, and the micro LED display panel has a wide application prospect.
It should be understood that the above-mentioned embodiments of the present invention are only examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention, and it will be obvious to those skilled in the art that other variations and modifications can be made on the basis of the above description, and all embodiments cannot be exhaustive, and all obvious variations and modifications belonging to the technical scheme of the present invention are within the protection scope of the present invention.
Claims (10)
1. A micro LED display panel, comprising:
the light-emitting device layer is arranged on the substrate and comprises a plurality of micro LED display units arranged in an array;
the color conversion layer is arranged on the light emitting side of the light emitting device layer and comprises a plurality of color conversion parts which correspond to the micro LED display units one by one; and
an adhesive layer disposed between the light emitting device layer and the color conversion layer;
wherein an orthogonal projection of the color conversion member on the substrate covers an orthogonal projection of the adhesive layer on the substrate.
2. The micro LED display panel of claim 1, wherein each color conversion member comprises a plurality of quantum dot color resists and barriers defining the quantum dot color resists,
wherein the height of the retaining wall is more than or equal to 20 μm and less than or equal to 50 μm.
3. The micro LED display panel of claim 2, wherein the height of the dam is greater than 30 μ ι η and less than or equal to 50 μ ι η.
4. The micro LED display panel of claim 1, wherein each color conversion member comprises: a first quantum dot color resistor, a second quantum dot color resistor, a third quantum dot color resistor, and a retaining wall for limiting the quantum dot color resistor, wherein an opening is arranged in the retaining wall,
wherein an orthographic projection of the color conversion member on the substrate is rectangular, each color conversion member includes the first quantum dot color resistance and the third quantum dot color resistance arranged along a first diagonal of the rectangle, and the second quantum dot color resistance and the opening arranged along a second diagonal of the rectangle, and the second quantum dot color resistance and the opening are located on both sides of the first diagonal.
5. The micro LED display panel of claim 4, wherein the opening has a depth of 2 μm or more and 30 μm or less, and an aperture of 15 μm or more and 30 μm or less.
6. The micro LED display panel of claim 1, wherein each color conversion member comprises: a first quantum dot color resistance, a second quantum dot color resistance, a third quantum dot color resistance, and a retaining wall defining the quantum dot color resistance,
wherein the orthographic projection of the color conversion components on the substrate is rectangular, each color conversion component comprises a first quantum dot color resistor and a third quantum dot color resistor which are arranged along a first diagonal of the rectangle, and a second quantum dot color resistor arranged on a second diagonal, and the position on the second diagonal opposite to the second quantum dot color resistor is a solid retaining wall,
at least part of the color conversion parts in the micro LED display panel comprise supporting columns, and the orthographic projections of the supporting columns on the substrate fall into the orthographic projections of the solid retaining walls on the substrate and do not overlap with the orthographic projections of the bonding layers on the substrate.
7. The micro LED display panel of claim 1, wherein the support posts have a height of 1 μ ι η or more and 10 μ ι η or less.
8. A display device comprising the micro LED display panel according to any one of claims 1-7.
9. A method of making the micro LED display panel of any one of claims 1-7, comprising:
forming a light emitting device layer including a plurality of micro LED display units arranged in an array;
forming a color conversion layer including a plurality of color conversion members in one-to-one correspondence with the micro LED display units;
and forming an adhesive layer on the light-emitting side of the color conversion layer or the light-emitting device layer, and adhering the light-emitting device layer and the color conversion layer together by using the adhesive layer to form the micro LED display panel.
10. The method of manufacturing according to claim 9, wherein the forming the color conversion layer further comprises:
forming a retaining wall on the glass cover plate, wherein the height of the retaining wall is more than or equal to 20 mu m and less than or equal to 50 mu m;
forming quantum dot color resists in the areas defined by the retaining walls,
or
Forming a retaining wall on the glass cover plate;
forming quantum dot color resists in the regions defined by the retaining walls;
forming an opening in the retaining wall;
wherein the orthographic projection of the color conversion components on the substrate is rectangular, each color conversion component comprises a first quantum dot color resistance and a third quantum dot color resistance arranged along a first diagonal of the rectangle, and a second quantum dot color resistance and the opening arranged along a second diagonal of the rectangle, the second quantum dot color resistance and the opening are positioned at two sides of the first diagonal,
or
Forming a retaining wall on the glass cover plate;
forming quantum dot color resists in the regions defined by the retaining walls;
forming a supporting column on the retaining wall;
the orthographic projection of the color conversion components on the substrate is rectangular, each color conversion component comprises a first quantum dot color resistor and a third quantum dot color resistor which are arranged along a first diagonal of the rectangle, and a second quantum dot color resistor arranged on a second diagonal, and the position, opposite to the second quantum dot color resistor, on the second diagonal is a solid retaining wall;
the orthographic projection of the supporting column on the substrate falls into the orthographic projection of the entity retaining wall on the substrate and is not overlapped with the orthographic projection of the bonding layer on the substrate.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114899286A (en) * | 2022-07-12 | 2022-08-12 | 诺视科技(苏州)有限公司 | Pixel-level discrete device and manufacturing method thereof |
| WO2024092548A1 (en) * | 2022-11-02 | 2024-05-10 | Boe Technology Group Co., Ltd. | Display substrate, display panel, display apparatus, and method of fabricating display substrate |
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- 2022-03-15 CN CN202210251115.2A patent/CN114639765A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114899286A (en) * | 2022-07-12 | 2022-08-12 | 诺视科技(苏州)有限公司 | Pixel-level discrete device and manufacturing method thereof |
| WO2024092548A1 (en) * | 2022-11-02 | 2024-05-10 | Boe Technology Group Co., Ltd. | Display substrate, display panel, display apparatus, and method of fabricating display substrate |
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