CN114636677A - Method, device, system, equipment and medium for characterizing semiconductor defects - Google Patents
Method, device, system, equipment and medium for characterizing semiconductor defects Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 63
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
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- G01N21/39—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using tunable lasers
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- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/39—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using tunable lasers
- G01N2021/392—Measuring reradiation, e.g. fluorescence, backscatter
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Abstract
The invention discloses a method, a device, a system, equipment and a medium for characterizing semiconductor defects, which comprise the following steps: obtaining the material type of a sample to be detected, wherein the sample to be detected is a semiconductor material; adjusting the temperature of the sample to be detected based on the type of the sample material to be detected; and characterizing the sample to be detected after the temperature is adjusted based on a second harmonic characterization method.
Description
Technical Field
The present invention relates to the field of semiconductors, and in particular, to a method, an apparatus, a system, a device, and a medium for characterizing defects of a semiconductor.
Background
Second Harmonic Generation (SHG), a novel optical characterization method, has achieved a great deal of success in the field of semiconductor defect characterization due to its advantages of being fast, lossless, and simple. For Si materials, information of Si interfaces and bulk materials can be obtained by analyzing the change of SHG strength along with azimuth angles under different polarization conditions, and the damage condition of the Si surfaces can be obtained by scanning; for GaN and SiC and other wide bandgap materials, analyzing the variation of SHG strength along with the azimuth angle under different polarization conditions to obtain the non-uniform strain information in the material, and scanning to obtain the defects of different crystal forms on the surface of the material; for dielectrics on semiconductor materials, information on the interface state density Dit and the fixed oxide charge Qox can be obtained by time-dependent second harmonic generation (TD-SHG).
However, when TD-SHG is used to characterize semiconductor materials, it takes a certain time from the time when the laser incident sample receives the saturated SHG signal to the detector, and the scan characterization requires a large number of data points to be tested, which increases the characterization time and is not conducive to the integration of SHG characterization techniques into the process line.
Disclosure of Invention
The embodiment of the application provides a method, a device, a system, equipment and a medium for characterizing semiconductor defects, solves the technical problem that a second harmonic characterization system with a complex structure and high cost is required to improve the characterization speed in the prior art, and achieves the effect of improving the second harmonic characterization speed with low cost and simplicity.
In a first aspect, the present application provides the following technical solutions through an embodiment of the present application:
a method of semiconductor defect characterization, comprising:
obtaining the material type of a sample to be detected, wherein the sample to be detected is a semiconductor material;
adjusting the temperature of the sample to be detected based on the type of the sample material to be detected;
and characterizing the sample to be tested after the temperature is adjusted based on a second harmonic characterization method.
In one embodiment, the adjusting the temperature of the sample to be tested based on the type of the sample material to be tested includes:
and determining the temperature to which the sample to be detected needs to be adjusted based on the saturation time of the second harmonic signal corresponding to the sample to be detected under different temperature conditions.
In one embodiment, the adjusting the temperature of the sample to be tested includes:
determining an adjustment time for adjusting the temperature of the sample to be measured based on the following formula:
T＝T1+T2
wherein T is the adjustment time; t is1The heating time is the time for adjusting the temperature of the sample to be measured to the temperature required to be adjusted; t is a unit of2And maintaining the sample to be detected at the temperature to be adjusted for the maintaining time.
In one embodiment, T2Is T1Twice as much.
In one embodiment, the adjusting the temperature of the sample to be tested includes:
and adjusting the temperature of the sample to be detected by using a temperature controller, wherein the temperature controller is continuously adjustable within the range of 25-500 ℃.
In one embodiment, the method includes, based on the type of sample material to be tested:
and adjusting the temperature of the sample to be detected based on the material type of the sample substrate to be detected.
In a second aspect, the present application provides the following technical solutions according to an embodiment of the present application:
an apparatus for semiconductor defect characterization, comprising:
the device comprises an acquisition unit, a processing unit and a processing unit, wherein the acquisition unit is used for acquiring the material type of a sample to be detected, and the sample to be detected is a semiconductor material;
the temperature control unit is used for adjusting the temperature of the sample to be detected based on the type of the sample material to be detected;
and the characterization unit is used for characterizing the sample to be tested after the temperature is adjusted based on a second harmonic characterization method.
In one embodiment, the temperature control unit is further configured to:
and determining the temperature to which the sample to be detected needs to be adjusted based on the saturation time of the second harmonic signal corresponding to the sample to be detected under different temperature conditions.
In one embodiment, the temperature control unit is further configured to:
determining an adjustment time for adjusting the temperature of the sample to be measured based on the following formula:
T＝T1+T2
wherein T is the adjustment time; t is a unit of1Heating time is the time for adjusting the temperature of the sample to be measured to the temperature required to be adjusted; t is2And maintaining the sample to be detected at the temperature to be adjusted for the maintaining time.
In one embodiment, the temperature control unit is further configured to:
T2is T1Twice as much.
In one embodiment, the temperature control unit is further configured to:
and adjusting the temperature of the sample to be detected by using a temperature controller, wherein the temperature controller is continuously adjustable within the range of 25-500 ℃.
In one embodiment, the temperature control unit is further configured to:
and adjusting the temperature of the sample to be detected based on the material type of the sample substrate to be detected.
In a third aspect, the present application provides the following technical solutions according to an embodiment of the present application:
a system for semiconductor defect characterization, comprising:
the temperature control device is used for adjusting the temperature of the sample to be detected, and the characterization device is used for characterizing the sample to be detected after the temperature is adjusted;
wherein the temperature control device includes: a sample stage and a temperature controller; the characterization apparatus includes: the device comprises a laser, a polarizer, a first objective lens, a second objective lens, an analyzer, an optical filter and a detector; laser emitted by the laser emitter sequentially passes through the polarizer and the first objective lens to enter the sample to be detected after temperature adjustment, and second harmonic reflected by the sample to be detected sequentially passes through the second objective lens, the analyzer and the optical filter to enter the detector; so that the detector analyzes the second harmonic to obtain the characterization data of the sample to be detected.
In a fourth aspect, the present application provides the following technical solutions according to an embodiment of the present application:
an electronic device comprising a memory, a processor and a computer program stored on the memory and executable on the processor, wherein the steps of the first aspect are implemented when the computer program is executed by the processor.
In a fifth aspect, the present invention provides the following technical solutions through an embodiment of the present invention:
a computer-readable storage medium, on which a computer program is stored, which, when being executed by a processor, carries out the steps of the first aspect.
One or more technical solutions provided in the embodiments of the present application have at least the following technical effects or advantages:
the embodiment of the invention discloses a method, a device, a system, equipment and a medium for characterizing semiconductor defects. Therefore, the technical problem that a long time is needed when the second harmonic representation is carried out on the semiconductor in the prior art is effectively solved. An excitation light source is not required to be additionally introduced to excite electrons and holes, and the effect of rapidly improving the second harmonic representation speed with low cost and simplicity is further realized.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on the drawings without creative efforts.
FIG. 1 is a flow chart of a method for semiconductor defect characterization in an embodiment of the present invention;
FIG. 2 is a schematic diagram of the generation principle of time-dependent second harmonic TD-SHG according to an embodiment of the present invention;
FIG. 3 shows 5nm SiO on Si substrate in an embodiment of the present invention2Time-dependent second harmonic TD-SHG signal diagram of (a);
FIG. 4 shows 15nm Al on Si substrate in an embodiment of the present invention2O3Time-dependent second harmonic TD-SHG signal diagram of (a);
FIG. 5 is a schematic diagram of the generation of time dependent second harmonic TD-SHG with temperature controller according to an embodiment of the present invention;
FIG. 6 is a block diagram of an apparatus for semiconductor defect characterization according to an embodiment of the present invention;
FIG. 7 is a block diagram of a system for semiconductor defect characterization in accordance with an embodiment of the present invention;
FIG. 8 is a block diagram of an electronic device according to an embodiment of the invention;
fig. 9 is a block diagram of a computer-readable storage medium according to an embodiment of the present invention.
Detailed Description
The embodiment of the application provides a method, a device, a system, equipment and a medium for characterizing semiconductor defects, solves the technical problem that a second harmonic characterization system with a complex structure and high cost is required to improve the characterization speed in the prior art, and achieves the effect of improving the second harmonic characterization speed with low cost and simplicity.
In order to solve the technical problems, the general idea of the embodiment of the application is as follows:
a method of semiconductor defect characterization, comprising:
obtaining the material type of a sample to be detected, wherein the sample to be detected is a semiconductor material;
adjusting the temperature of the sample to be detected based on the type of the sample material to be detected;
and characterizing the sample to be tested after the temperature is adjusted based on a second harmonic characterization method.
In order to better understand the technical scheme, the technical scheme is described in detail in the following with reference to the attached drawings of the specification and specific embodiments.
First, it is stated that the term "and/or" appearing herein is merely one type of associative relationship that describes an associated object, meaning that three types of relationships may exist, e.g., a and/or B may mean: a exists alone, A and B exist simultaneously, and B exists alone. In addition, the character "/" herein generally indicates that the former and latter related objects are in an "or" relationship.
Example one
Specifically, as shown in fig. 1, an embodiment of the present application provides a method for semiconductor defect characterization, including:
step S101, obtaining the material type of a sample to be detected, wherein the sample to be detected is a semiconductor material.
In a specific implementation, the semiconductor material shown in fig. 2 includes: a dielectric layer 2 and a substrate layer 3, wherein the substrate layer 3 can absorb energy of the laser 1 to generate a large amount of electrons 5 and holes 4; under the action of the initial interfacial electric field Edc6 introduced by the manufacturing process, the electron-hole will dissociate 7; the electrons get the laser 1 energy and cross the interface potential barrier to be captured by the defects 8 in the dielectric layer, the interface electric field Edc6 is changed accordingly, and the interface electric field Edc6 is gradually saturated as the defects 8 in the dielectric layer are gradually filled with the electrons; the intensity of the second harmonic SHG changes along with the change of the interface electric field Edc6 in the process, and the time-dependent second harmonic TD-SHG curve can be obtained by detecting and recording the second harmonic SHG signal, so as to obtain the information of the interface state density Dit and the fixed oxide charge Qox.
And S102, adjusting the temperature of the sample to be detected based on the material type of the sample to be detected.
In the implementation process, the material types of the substrate layer and the dielectric layer of different semiconductors are different, and the temperature for generating electrons and holes by intrinsic excitation of different substrate materials is also different. Generally, valence electrons in semiconductors are not as strong as those in insulators, and if certain energy (such as light, temperature rise, electromagnetic field excitation, etc.) can be obtained from the outside, some valence electrons may break free of covalent bonds and become approximately free electrons (simultaneously, a hole is generated), which is intrinsic excitation. This is a thermal eigen-excitation, and the average energy required is the forbidden bandwidth.
Therefore, the wider the forbidden bandwidth of the substrate material is, the higher the temperature of the sample to be measured can be adjusted, but the adjusted temperature cannot exceed the melting point temperature of the constituent materials of the sample to be measured, such as silicon Si, gallium nitride GaN and silicon carbide SiC, and the melting points of the three materials are respectively: 1685K, 2791K, 3103K.
And S103, characterizing the sample to be tested after the temperature is adjusted based on a second harmonic characterization method.
In the specific implementation process, the second harmonic SHG is a novel optical characterization method, and has achieved a great deal of achievements in the field of semiconductor defect characterization due to its advantages of rapidness, no damage and simplicity. For Si materials, the information of a silicon Si interface and bulk materials can be obtained by analyzing the variation of second harmonic SHG intensity along with the azimuth angle under different polarization conditions, and the damage condition of the Si surface can be obtained by scanning Mapping; for wide bandgap materials such as gallium nitride GaN and silicon carbide SiC, non-uniform strain information in the material can be obtained by analyzing the variation of second harmonic SHG intensity along with the azimuth angle under different polarization conditions, and defects of different crystal forms on the surface of the material can be obtained by scanning Mapping; for the dielectric on the semiconductor material, the information of the interface state density Dit and the fixed oxide charge Qox can be obtained through time-dependent second harmonic TD-SHG, and the defect information in the dielectric on the wafer level semiconductor material can be obtained through scanning Mapping.
As an alternative embodiment, step S102 further includes:
and determining the temperature to which the sample to be detected needs to be adjusted based on the saturation time of the second harmonic signal corresponding to the sample to be detected under different temperature conditions.
In the implementation process, due to different doping concentrations and different substrate/dielectric combinations, different optimal temperature values of the dielectric thickness on the substrate can be different, and a specific optimal temperature value cannot be given. As shown in fig. 3 and 4: 5nm SiO was seen on the Si substrate2Signal saturation within 10s, 15nm Al on Si substrate2O3The signal saturates within 50 s.
However, the time-dependent second harmonic TD-SHG signal can be measured for different samples at room temperature, and then the temperature can be changed to measure the time-dependent second harmonic TD-SHG signal at different temperatures, for example, the time-dependent second harmonic TD-SHG signal is always saturated at a certain temperature or is saturated in a short time (0.1s, 1ms), and the temperature is the optimal temperature for the test sample.
As an alternative embodiment, step S102 further includes:
determining an adjustment time for adjusting the temperature of the sample to be measured based on the following formula:
T＝T1+T2
wherein T is the adjustment time; t is1The heating time is the time for adjusting the temperature of the sample to be measured to the temperature required to be adjusted; t is2And maintaining the sample to be detected at the temperature to be adjusted for the maintaining time.
In the specific implementation, T2Is T1Twice as much, and thus, the substrate of the semiconductor can be made to generate sufficient electrons and holes in the fastest time. T of it2Or may be any time, and this embodiment is not particularly limited.
Specifically, after the optimal temperature of a certain type of sample is obtained, the type of sample is directly heated to the temperature, and the heating time is not long, for example, the PW-800 heater is used to heat the sample from room temperature to 300 ℃, only 15 minutes are needed, of which 15 minutes are used for heating to 299 ℃, and the remaining 10 minutes are used for stabilizing the temperature, that is, the temperature jump within the remaining 10 minutes may be 299-.
As an alternative embodiment, step S102 further includes:
and adjusting the temperature of the sample to be detected by using a temperature controller, wherein the temperature controller is continuously adjustable within the range of 25-500 ℃.
In a specific implementation, as shown in fig. 5, the substrate layer 3 absorbs the heat 21 provided by the temperature controller 20 to generate a large number of electrons 5 and holes 4 and excite them into the defects 8 in the dielectric layer 2, whereas the laser 1 only needs to be responsible for exciting a small number of electrons to the defect level in the dielectric layer 2. Compared with the system without the temperature controller 20 in fig. 2, the substrate layer 3 absorbs the heat 21 of the temperature controller 20, promotes the excitation of electron-hole pairs, and excites a large number of electrons into the dielectric layer 2 defects, thereby improving the characterization speed.
As an alternative embodiment, step S102 further includes:
and adjusting the temperature of the sample to be detected based on the material type of the sample substrate to be detected.
In the specific implementation process, electrons and holes generated by the semiconductor absorbing heat mainly originate from the semiconductor substrate, so that the temperature of the sample to be detected can be adjusted based on the material type of the sample substrate to be detected, and the second harmonic characterization speed is further improved.
The technical scheme in the embodiment of the application at least has the following technical effects or advantages:
the embodiment of the invention discloses a method for characterizing semiconductor defects. Therefore, the technical problem that a long time is needed when the second harmonic representation is carried out on the semiconductor in the prior art is effectively solved. An excitation light source is not required to be additionally introduced to excite electrons and holes, and the effect of rapidly improving the second harmonic representation speed with low cost and simplicity is further realized.
Example two
Based on the same inventive concept, as shown in fig. 6, the present embodiment provides an apparatus 600 for semiconductor defect characterization, which includes:
an obtaining unit 610, configured to obtain a material type of a sample to be tested, where the sample to be tested is a semiconductor material;
the temperature control unit 620 is configured to adjust the temperature of the sample to be detected based on the type of the sample material to be detected;
and the characterization unit 630 is used for characterizing the sample to be tested after the temperature is adjusted based on a second harmonic characterization method.
Since the apparatus for semiconductor defect characterization described in this embodiment is an apparatus used for implementing the method for semiconductor defect characterization in this embodiment of the present invention, based on the method for semiconductor defect characterization described in this embodiment of the present invention, a person skilled in the art can understand a specific implementation manner of the apparatus for semiconductor defect characterization in this embodiment and various variations thereof, and therefore, a detailed description of how the apparatus for semiconductor defect characterization implements the method in this embodiment of the present invention is not provided here. The apparatus used by those skilled in the art to implement the method for characterizing semiconductor defects in the embodiments of the present invention is within the scope of the present invention.
The technical scheme in the embodiment of the application at least has the following technical effects or advantages:
the embodiment of the invention discloses a device for characterizing semiconductor defects, wherein before second harmonic characterization is carried out on a sample to be tested, the temperature of the sample to be tested is adjusted based on the material type of the sample to be tested, and the sample to be tested absorbs heat to generate a large number of electrons and holes, so that the second harmonic characterization speed is increased. Therefore, the technical problem that a long time is needed when the second harmonic representation is carried out on the semiconductor in the prior art is effectively solved. An excitation light source is not required to be additionally introduced to excite electrons and holes, and the effect of rapidly improving the second harmonic representation speed with low cost and simplicity is further realized.
EXAMPLE III
Based on the same inventive concept, as shown in fig. 7, the present embodiment provides a system for semiconductor defect characterization, which includes:
the temperature control device is used for adjusting the temperature of the sample to be detected, and the characterization device is used for characterizing the sample to be detected after the temperature is adjusted;
wherein the temperature control device includes: a sample stage 19 and a temperature controller 20; the characterization apparatus includes: the device comprises a laser 9, a polarizer 10, a first objective lens 11, a second objective lens 13, an analyzer 14, an optical filter 15 and a detector 17; the laser 12 emitted by the laser emitter sequentially passes through the polarizer 10 and the first objective lens 11 to enter the sample 18 to be detected after the temperature is adjusted, and the second harmonic reflected by the sample 18 to be detected passes through the second objective lens 13, the analyzer 14 and the optical filter 15 to enter the detector 17 for 16 times, so that the detector 17 analyzes the second harmonic to obtain the characterization data of the sample 18 to be detected.
Since the system for semiconductor defect characterization described in this embodiment is a system used for implementing the method for semiconductor defect characterization in this embodiment of the present invention, based on the method for semiconductor defect characterization described in this embodiment of the present invention, a person skilled in the art can understand the specific implementation manner of the system for semiconductor defect characterization of this embodiment and various variations thereof, so that a detailed description of how to implement the method in this embodiment of the present invention by the system for semiconductor defect characterization is not described here. The system adopted by the person skilled in the art to implement the method for semiconductor defect characterization in the embodiments of the present invention is within the intended scope of the present invention.
Example four
Based on the same inventive concept, as shown in fig. 8, the present embodiment provides an electronic device, which includes a memory 810, a processor 820, and a computer program 811 stored in the memory 810 and capable of running on the processor 820, wherein the processor 820 implements the following steps when executing the computer program 811:
obtaining the material type of a sample to be detected, wherein the sample to be detected is a semiconductor material; adjusting the temperature of the sample to be detected based on the type of the sample material to be detected; and characterizing the sample to be tested after the temperature is adjusted based on a second harmonic characterization method.
Since the electronic device described in this embodiment is an electronic device used for implementing the method for characterizing a semiconductor defect in this embodiment, a person skilled in the art can understand the specific implementation manner of the electronic device of this embodiment and various variations thereof based on the method for characterizing a semiconductor defect described in this embodiment, and therefore, how to implement the method in this embodiment of this application by the electronic device is not described in detail herein. Electronic devices used by those skilled in the art to implement the method for semiconductor defect characterization in the embodiments of the present application are all within the scope of the present application.
EXAMPLE five
Based on the same inventive concept, as shown in fig. 9, the present embodiment provides a computer-readable storage medium 900, on which a computer program 910 is stored, and the computer program 910, when executed by a processor, implements the following steps:
obtaining the material type of a sample to be detected, wherein the sample to be detected is a semiconductor material; adjusting the temperature of the sample to be detected based on the type of the sample material to be detected; and characterizing the sample to be tested after the temperature is adjusted based on a second harmonic characterization method.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
1. A method of semiconductor defect characterization, comprising:
obtaining the material type of a sample to be detected, wherein the sample to be detected is a semiconductor material;
adjusting the temperature of the sample to be detected based on the type of the sample material to be detected;
and characterizing the sample to be tested after the temperature is adjusted based on a second harmonic characterization method.
2. The method of claim 1, wherein said adjusting the temperature of the test sample based on the type of test sample material comprises:
and determining the temperature to which the sample to be detected needs to be adjusted based on the saturation time of the second harmonic signal corresponding to the sample to be detected under different temperature conditions.
3. The method of claim 1, wherein said adjusting the temperature of said sample to be tested comprises:
determining an adjustment time for adjusting the temperature of the sample to be measured based on the following formula:
T＝T1+T2
wherein T is the adjustment time; t is1Heating time is the time for adjusting the temperature of the sample to be measured to the temperature required to be adjusted; t is2And maintaining the sample to be detected at the temperature to be adjusted for the maintaining time.
4. The method of claim 3, wherein T is2Is T1Twice as much.
5. The method of claim 1, wherein said adjusting the temperature of said sample to be tested comprises:
and adjusting the temperature of the sample to be detected by using a temperature controller, wherein the temperature controller is continuously adjustable within the range of 25-500 ℃.
6. The method of claim 1, wherein adjusting the temperature of the test sample based on the test sample material type comprises:
and adjusting the temperature of the sample to be detected based on the material type of the sample substrate to be detected.
7. An apparatus for semiconductor defect characterization, comprising:
the device comprises an acquisition unit, a processing unit and a processing unit, wherein the acquisition unit is used for acquiring the material type of a sample to be detected, and the sample to be detected is a semiconductor material;
the temperature control unit is used for adjusting the temperature of the sample to be detected based on the type of the sample material to be detected;
and the characterization unit is used for characterizing the sample to be tested after the temperature is adjusted based on a second harmonic characterization method.
8. A system for semiconductor defect characterization, comprising:
the temperature control device is used for adjusting the temperature of the sample to be detected, and the characterization device is used for characterizing the sample to be detected after the temperature is adjusted;
wherein the temperature control device includes: a sample stage and a temperature controller; the characterization device includes: the device comprises a laser, a polarizer, a first objective lens, a second objective lens, an analyzer, an optical filter and a detector; laser emitted by the laser emitter sequentially passes through the polarizer and the first objective lens to enter the sample to be detected after temperature adjustment, and second harmonic reflected by the sample to be detected sequentially passes through the second objective lens, the analyzer and the optical filter to enter the detector, so that the detector analyzes the second harmonic to obtain characterization data of the sample to be detected.
9. An electronic device comprising a memory, a processor and a computer program stored on the memory and executable on the processor, characterized in that the steps of any of claims 1-5 are implemented when the processor executes the computer program.
10. A computer-readable storage medium, on which a computer program is stored which, when being executed by a processor, carries out the method steps of any one of claims 1 to 5.
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| CN202011476570.XA Pending CN114636677A (en) | 2020-12-15 | 2020-12-15 | Method, device, system, equipment and medium for characterizing semiconductor defects |
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