CN114633387A - Device and method for preventing wire hanging in large-size silicon wafer material lifting process - Google Patents
Device and method for preventing wire hanging in large-size silicon wafer material lifting process Download PDFInfo
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- CN114633387A CN114633387A CN202210359793.0A CN202210359793A CN114633387A CN 114633387 A CN114633387 A CN 114633387A CN 202210359793 A CN202210359793 A CN 202210359793A CN 114633387 A CN114633387 A CN 114633387A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 102
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 100
- 239000010703 silicon Substances 0.000 title claims abstract description 100
- 238000000034 method Methods 0.000 title claims abstract description 57
- 239000000463 material Substances 0.000 title claims abstract description 22
- 238000005520 cutting process Methods 0.000 claims abstract description 146
- 230000007246 mechanism Effects 0.000 claims abstract description 114
- 239000011347 resin Substances 0.000 claims abstract description 97
- 229920005989 resin Polymers 0.000 claims abstract description 97
- 235000012431 wafers Nutrition 0.000 claims abstract description 97
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 64
- 239000010432 diamond Substances 0.000 claims abstract description 64
- 238000002347 injection Methods 0.000 claims abstract description 60
- 239000007924 injection Substances 0.000 claims abstract description 60
- 239000013078 crystal Substances 0.000 claims abstract description 58
- 239000004576 sand Substances 0.000 claims abstract description 50
- 239000002002 slurry Substances 0.000 claims abstract description 50
- 238000005507 spraying Methods 0.000 claims abstract description 17
- 239000000314 lubricant Substances 0.000 claims abstract description 13
- 239000004570 mortar (masonry) Substances 0.000 claims description 136
- 239000000243 solution Substances 0.000 claims description 34
- 238000000926 separation method Methods 0.000 claims description 21
- 239000007788 liquid Substances 0.000 claims description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 230000001050 lubricating effect Effects 0.000 claims description 9
- 239000002202 Polyethylene glycol Substances 0.000 claims description 6
- 229920001223 polyethylene glycol Polymers 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 5
- 239000011259 mixed solution Substances 0.000 claims description 3
- 238000001816 cooling Methods 0.000 abstract description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000004804 winding Methods 0.000 description 7
- 230000017525 heat dissipation Effects 0.000 description 5
- 238000006748 scratching Methods 0.000 description 5
- 230000002393 scratching effect Effects 0.000 description 5
- 230000002159 abnormal effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 239000000110 cooling liquid Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0076—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for removing dust, e.g. by spraying liquids; for lubricating, cooling or cleaning tool or work
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
The invention discloses a device and a method for preventing wire hanging in the process of lifting materials of a large-size silicon wafer, which belong to the technical field of cutting of the large-size silicon wafer, solve the problems of uneven cooling of the cutting position of the silicon wafer in the cutting process of the silicon wafer and uneven spraying of a lubricant among a diamond wire, the silicon wafer and a resin plate in the material lifting stage, reduce the problem that the temperature of the cutting position is not easy to radiate in the cutting process, the device comprises a push-pull mechanism, a resin plate, a crystal bar, a first sand slurry injection mechanism, a second sand slurry injection mechanism and a cutting mechanism, wherein the upper end of the crystal bar is provided with the resin plate, the crystal bar and the resin plate are positioned between the cutting mechanism and the push-pull mechanism, the push-pull mechanism pushes the crystal bar and the resin plate to vertically move along the cutting mechanism, the crystal bar is cut into a plurality of silicon wafers along the cutting mechanism, and the left side and the right side of the crystal bar are respectively provided with a first sand slurry injection mechanism and a second sand slurry injection mechanism.
Description
Technical Field
The invention relates to the technical field of large-size silicon wafer cutting, in particular to a device and a method for preventing wire hanging in a large-size silicon wafer material lifting process.
Background
In the production process of the semiconductor equipment, a silicon wafer is used as a raw material of a chip, more than 4000 ten thousand transistors can be integrated on the silicon wafer, and a crystal bar needs to be cut in a linear cutting mode in the production process of the silicon wafer, so that the silicon wafer is obtained. Patent No. cn202110891837.x discloses a crystal bar wire cutting device, comprising: the cutting structure comprises two wire guide wheels which are oppositely arranged, and a plurality of cutting lines wound between the two wire guide wheels, wherein the orthographic projection of the cutting lines on the crystal bar is a cutting position; the crystal bar fixing structure comprises a plurality of fixing parts arranged at intervals along a first direction, the orthographic projection of the fixing parts on the crystal bar is positioned between two adjacent cutting positions, and the first direction is the extending direction of the crystal bar; the first moving structure is used for controlling the cutting structure and/or the crystal bar fixing structure to move so that the cutting structure and the crystal bar fixing structure move oppositely to cut the crystal bar to form a plurality of silicon wafers; and the second moving structure is used for controlling the fixed parts to move along the first direction so as to enable the distance between two adjacent silicon chips to be larger than a preset value. The invention also relates to a crystal bar wire cutting method.
Patent No. CN202110119045.0 discloses a wire cutting device for cut the crystal bar, including two wire wheels that set up relatively, around locating many cutting lines between the wire wheel for the crystal bar work piece of fixed crystal bar, and elevation structure, elevation structure is used for controlling the descending of crystal bar work piece so that crystal bar and cutting line contact, or controls the rising of crystal bar work piece so that crystal bar and cutting line break away from the contact, the crystal bar work piece is including being used for the contact plate in advance of being connected with the cutting initial surface of crystal bar. The invention also relates to a linear cutting method. Through the setting of contact plate in advance, when the crystal bar cuts for contact plate in advance and the line of cut contact earlier, avoid the initial face of cutting of crystal bar and the line of cut contact to produce the heat set, and then prevent that the silicon chip from producing the thermal energy because the heat set.
However, the cooling method in the existing cutting process is easy to cause that heat generated in the middle of the silicon wafer is not easy to be brought out in the cutting process of the large-size silicon wafer, so that the heat of the silicon wafer is not uniformly released, and when the resin plate is cut, the resin plate is easy to deform due to the hot melt of the resin plate, so that the cutting path of the diamond wire in the resin plate is abnormally changed and the cutting path is distorted;
when the diamond wire is separated from the resin plate and the silicon wafer after cutting, the diamond wire separation path performs separation movement according to the cutting path, and under the influence of the large size of the silicon wafer, mortar solutions sprayed from two sides cannot reach the middle position of the resin plate and the silicon wafer, so that the friction force between the middle of the resin plate and the silicon wafer is greater than that between the two sides, and the phenomena of wire breakage and scratching of the surface of the silicon wafer are caused.
Disclosure of Invention
The invention aims to provide a device and a method for preventing wire hanging in the material lifting process of a large-size silicon wafer, which reduce the friction force among the silicon wafer, a resin plate and a diamond wire by an internal cooling resin plate and accurately spraying a cooling solution to the side surface of the silicon wafer after material lifting, thereby achieving the effects of reducing wire breakage of the diamond wire in the separation process and reducing surface scratches of the silicon wafer, and solving the problems in the background technology.
In order to achieve the purpose, the invention provides the following technical scheme: the device comprises a push-pull mechanism, a resin plate, a crystal bar, a first sand slurry injection mechanism, a second sand slurry injection mechanism and a cutting mechanism, wherein the resin plate is arranged at the upper end of the crystal bar, the crystal bar and the resin plate are both positioned between the cutting mechanism and the push-pull mechanism, the push-pull mechanism pushes the crystal bar and the resin plate to vertically move along the cutting mechanism, the crystal bar is cut into a plurality of silicon wafers along the cutting mechanism, and the first sand slurry injection mechanism and the second sand slurry injection mechanism are respectively arranged on the left side and the right side of the crystal bar.
Further, the push-pull mechanism comprises a supporting plate, a push-pull assembly and a U-shaped frame plate, the push-pull assembly is installed on the supporting plate, the lower end of the push-pull assembly is fixedly connected with the U-shaped frame plate, the push-pull assembly adjusts the distance between the supporting plate and the U-shaped frame plate, and the push-pull assembly is an air cylinder, a hydraulic cylinder or an electric telescopic rod.
Furthermore, a plurality of through holes with two transparent ends are formed in the middle of the resin plate, the adjacent through holes are parallel to each other, a third sand slurry injection mechanism is arranged between the first sand slurry injection mechanism and the second sand slurry injection mechanism, the third sand slurry injection mechanism is located on one side of the resin plate and is used for injecting mortar solution into the through holes, and the mortar solution is used for reducing the temperature of the resin plate.
Further, the cross section of the through hole is any one of a rectangle, a circle and a diamond.
Furthermore, a first mortar pipe, a mortar nozzle and a grouting hose of the third mortar injection mechanism are arranged on one side, facing the resin plate, of the first mortar pipe, a plurality of mortar nozzles which are consistent with the cross section of the through hole in shape are arranged on one side of the first mortar pipe, the middle of the upper end of the first mortar pipe is communicated with the grouting hose, and the first mortar pipe is fixedly connected between the first mortar injection mechanism and the second mortar injection mechanism.
Furthermore, the structure of the first mortar liquid injection mechanism is consistent with that of the second mortar liquid injection mechanism, the first mortar liquid injection mechanism comprises a second mortar pipe, a mortar liquid inlet pipe orifice, a mortar pipe moving Z shaft, a mortar pipe moving X shaft and a mortar liquid injection orifice, two ends of the second mortar pipe horizontally move along the mortar pipe moving X shaft, the two mortar pipes vertically move along the mortar pipe moving Z shaft, the mortar liquid injection orifice is formed in one side wall of the second mortar pipe, the middle of the second mortar pipe is provided with the mortar liquid inlet pipe orifice with an upward opening, and the mortar liquid inlet pipe orifice and the mortar liquid injection orifice are connected with the inner cavity of the second mortar pipe.
Furthermore, a sliding block is arranged at the joint of the moving X axis of the mortar pipe and the second mortar pipe, the sliding block slides along the moving X axis of the mortar pipe, one end of the second mortar pipe is rotatably connected with the sliding block through a bearing, and the other end of the second mortar pipe is connected with the sliding block through a rotating motor.
Further, the cutting mechanism comprises a lower cutting main roller, a lower cutting wire winding side main roller and a cutting wire mesh, the upper side of the right side of the lower cutting main roller is provided with the lower cutting wire winding side main roller, the upper side of the left side of the lower cutting main roller is provided with the lower cutting wire winding side main roller, the lower cutting wire winding side main roller and the lower cutting wire winding side main roller are wound with the cutting wire mesh, the cutting wire mesh is composed of a plurality of mutually parallel diamond wires, the distance between every two adjacent diamond wires is equal, and the cutting wire mesh between the lower cutting wire winding side main roller and the lower cutting wire winding side main roller is positioned between the crystal bar and the lower bottom plate of the push-pull mechanism.
Furthermore, the mortar inlet pipe orifice and the grouting hose are both communicated with a water pump, and the water pump pumps the mortar solution, the lubricating water solution containing 3% of polyethylene glycol or the mixed solution of the mortar solution and the lubricating water solution through a pipeline.
According to another aspect of the invention, a method for preventing wire hanging in a large-size silicon wafer lifting process is provided, which comprises the following steps:
s101: the cutting is not started, the resin plate is perforated, and mortar solution with fixed flow is sprayed into the resin plate;
s102: in the cutting process, the pushing and pulling mechanism pushes and presses the resin plate and the crystal bar downwards, the diamond wire bends downwards to cut the crystal bar and the resin plate, and meanwhile, the first sand slurry spraying mechanism and the second sand slurry spraying mechanism spray a solution containing mortar and lubricant on the side surface of the contact position of the diamond wire and the silicon wafer and the resin plate;
s103: and after cutting, the push-pull mechanism lifts materials upwards, the diamond wire bends upwards, and meanwhile, the first sand slurry injection mechanism and the second sand slurry injection mechanism inject a solution containing mortar and a lubricant at the separation positions of the diamond wire, the resin plate and the silicon wafer.
Compared with the prior art, the invention has the beneficial effects that:
1. the invention provides a device and a method for preventing wire hanging in the process of lifting materials of a large-size silicon wafer, wherein a resin plate with a special shape and a heat dissipation structure is used, a mortar solution with a fixed flow rate is sprayed into the resin plate in the process of cutting the silicon wafer, and a solution containing mortar and a lubricant is sprayed at the side surface of the contact position of a diamond wire with the silicon wafer and the resin plate, so that the heat in the cutting process is reduced, the cutting path of the diamond wire in the cutting process is stabilized, and wire hanging breakage and silicon wafer scratching caused by unstable separation paths in the separation process of the diamond wire, the silicon wafer and the resin plate are reduced;
2. according to the device and the method for preventing the wire hanging in the large-size silicon wafer material lifting process, after cutting is finished, lubricating aqueous solution containing 3% of polyethylene glycol is sprayed to the separation position of the diamond wire, the resin plate and the silicon wafer by utilizing the heat dissipation structure of the resin plate and the sand slurry spraying mechanisms on two sides of the crystal bar, so that the lubricant distribution on the surface of the silicon wafer is improved, the friction force is reduced, and wire hanging breakage and silicon wafer scratching are reduced;
3. according to the device and the method for preventing the wire hanging in the large-size silicon wafer lifting process, static friction of the resin plate on the diamond wire and the resin plate which starts to separate from the diamond wire is approximately the same as dynamic friction of the resin plate on the diamond wire and the resin plate which starts to separate from the diamond wire, sudden change of friction force is reduced, and the wire hanging and wire breaking at the position of the resin plate are avoided.
Drawings
FIG. 1 is an overall structure diagram of a device for preventing wire hanging during the large-size silicon wafer lifting process according to the present invention;
FIG. 2 is a structural diagram of the device for preventing wire hanging during the large-size silicon wafer lifting process of the present invention without installing a push-pull mechanism;
FIG. 3 is a side view of a cutting mechanism of the device for preventing wire hanging in the large-size silicon wafer lifting process;
FIG. 4 is a structural diagram of a push-pull mechanism of the device for preventing the wire hanging in the large-size silicon wafer lifting process;
FIG. 5 is a resin board structure diagram of the device for preventing wire hanging during the large-size silicon wafer lifting process according to the present invention;
FIG. 6 is a three-structure diagram of a sand slurry injection mechanism of the device for preventing wire hanging in the large-size silicon wafer lifting process;
FIG. 7 is a structural diagram of a sand slurry spraying mechanism of the device for preventing the wire hanging in the large-size silicon wafer lifting process;
FIG. 8 is a flow chart of the method for preventing wire hanging during the process of lifting large-size silicon wafers according to the present invention;
FIG. 9 is a process diagram of the method for preventing wire hanging during the material lifting process of large-sized silicon wafers according to the present invention;
FIG. 10 is a process diagram of cutting a resin plate in the method for preventing wire hanging during the process of lifting large-size silicon wafers.
In the figure: 1. a push-pull mechanism; 11. a support plate; 12. a push-pull assembly; 13. a U-shaped frame plate; 2. a resin plate; 3. crystal bar; 4. a first sand slurry injection mechanism; 41. a second mortar pipe; 42. the mortar liquid enters the mortar pipe opening; 43. moving the Z axis by the mortar pipe; 44. moving the mortar pipe along the X axis; 45. a sand slurry injection port; 46. a slider; 47. a rotating electric machine; 5. a second sand slurry injection mechanism; 6. a cutting mechanism; 61. cutting the lower main roller; 62. cutting the main roller at the take-up side; 63. cutting the incoming line side main roller; 64. cutting the mesh wire; 7. a third sand slurry injection mechanism; 71. a first mortar pipe; 72. a mortar nozzle; 73. and (4) grouting a hose.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1 to 3, a device for preventing wire hanging in a large-size silicon wafer lifting process comprises a push-pull mechanism 1, a resin plate 2, a crystal bar 3, a first sand slurry injection mechanism 4, a second sand slurry injection mechanism 5 and a cutting mechanism 6, wherein the upper end of the crystal bar 3 is provided with the resin plate 2, the crystal bar 3 and the resin plate 2 are both positioned between the cutting mechanism 6 and the push-pull mechanism 1, the push-pull mechanism 1 pushes the crystal bar 3 and the resin plate 2 to vertically move along the cutting mechanism 6, the crystal bar 3 is cut into a plurality of silicon wafers along the cutting mechanism 6, the first sand slurry injection mechanism 4 and the second sand slurry injection mechanism 5 are respectively arranged on the left side and the right side of the crystal bar 3, the problems of uneven cooling of a silicon wafer cutting position in the silicon wafer cutting process and uneven spraying of a lubricant between a diamond wire and the silicon wafer and the resin plate 2 in the lifting stage are solved, and the problem that the temperature of the cutting position is not easily diffused in the slicing process is reduced, and the problem of insufficient lubrication in the material lifting process is solved, the product yield is improved, and the occurrence of abnormal wire breakage and the output of abnormal silicon wafers are reduced.
The cutting mechanism 6 comprises a lower cutting main roller 61, a lower cutting and wire-rewinding side main roller 62, a lower cutting and wire-rewinding side main roller 63 and a cutting and wire-rewinding side main roller 64, wherein the upper right side of the lower cutting main roller 61 is provided with the lower cutting and wire-rewinding side main roller 63, the upper left side of the lower cutting main roller 61 is provided with the lower cutting and wire-rewinding side main roller 63, the lower cutting main roller 61, the lower cutting and wire-rewinding side main roller 62 and the lower cutting and wire-rewinding side main roller 63 are wound with the cutting and wire-rewinding side main roller 64, the cutting and wire-rewinding side main roller 64 is composed of a plurality of mutually parallel diamond wires, the distance between the adjacent diamond wires is equal, the cutting and wire-rewinding side main roller 62 and the lower cutting and wire-rewinding side main roller 63 are positioned between the crystal bar 3 and the lower bottom plate of the push-pull mechanism 1, the lower bottom plate of the push-pull mechanism 1 refers to the plate positioned at the lowest on the U-shaped frame plate 13, the end of any one of the lower cutting main roller 61, the lower cutting and wire-rewinding side main roller 62 and the lower cutting and wire-rewinding side main roller 63 is provided with a driving motor, the motor shaft of driving motor cuts down main roll 61 through shaft coupling fixedly connected with, cut receipts line side main roll 62 or cutting inlet wire side main roll 63, driving motor is used for the drive to cut net twine 64 and rotates, improve the cutting dynamics, reduce the formation of burr, main roll 61 under the cutting in this embodiment, also can arbitrary two tip installation driving motor in cutting receipts line side main roll 62 and the cutting inlet wire side main roll 63 for improve the pivoted speed of cutting net twine 64, also can cut down main roll 61, cut receipts line side main roll 62 and cutting inlet wire side main roll 63 three all install driving motor, further improve the cutting dynamics of diamond wire to silicon chip.
Referring to fig. 4, the push-pull mechanism 1 includes a supporting plate 11, a push-pull assembly 12 and a U-shaped frame plate 13, the supporting plate 11 is provided with the push-pull assembly 12, the lower end of the push-pull assembly 12 is fixedly connected with the U-shaped frame plate 13, the push-pull assembly 12 adjusts the distance between the supporting plate 11 and the U-shaped frame plate 13, wherein the push-pull assembly 12 is an air cylinder, a hydraulic cylinder or an electric telescopic rod, the push-pull assembly 12 in this embodiment is an air cylinder, the air cylinder is fixedly connected to the supporting plate 11 through a bolt, the middle of the air cylinder is movably connected with an air rod, and the lower end of the air rod is fixedly connected to the U-shaped frame plate 13.
Referring to fig. 5, a plurality of through holes with two through ends are formed in the middle of a resin plate 2, adjacent through holes are parallel to each other, the resin plate 2 with a special shape of an internal heat dissipation structure is used, and special solution is sprayed to the two sides and the inside of a silicon wafer to enable the lubricating and cooling effects of the two sides and the inside of the silicon wafer to be the same, so that the problems of excessive friction force, temperature and friction force and temperature difference between the middle position and the two sides caused by excessive size of the large-size silicon wafer and the resin plate 2 during and after cutting are solved, the wire breakage caused by the distortion of a cutting path caused by abnormal temperature of a diamond wire in the cutting process, the wire breakage and the surface scratch of the silicon wafer caused by uneven friction force in the separation process of the diamond wire, the silicon wafer, a sand slurry spraying mechanism three 7 is arranged between the sand slurry spraying mechanism one 4 and the sand slurry spraying mechanism two 5, the sand slurry spraying mechanism three 7 is positioned on one side of the resin plate 2, the third sand slurry spraying mechanism 7 is used for spraying a mortar solution into the through hole, the mortar solution is used for reducing the temperature of the resin plate 2, the cross section of the through hole is any one of rectangular, circular and rhombic, the static friction of the resin plate 2 between the diamond wire and the resin plate 2, which starts to separate from the diamond wire, is approximately the same as the dynamic friction of the resin plate 2 between the diamond wire and the resin plate which starts to separate from the diamond wire, the sudden change of the friction force is reduced, and the phenomenon that the position of the resin plate 2 is broken due to hanging wires is avoided.
Referring to fig. 6, a first mortar pipe 71, a first mortar nozzle 72 and a second mortar nozzle 73 of a third mortar injecting mechanism 7 are provided, the first mortar pipe 71 is provided with a plurality of first mortar nozzles 72 having a cross-sectional shape corresponding to the cross-sectional shape of the through-hole on a side of the resin plate 2, the middle of the upper end of the first mortar pipe 71 is communicated with the second mortar nozzle 73, and the first mortar pipe 71 is fixedly connected between the first mortar injecting mechanism 4 and the second mortar injecting mechanism 5, which are movable along the X-axis 44.
Referring to fig. 7, the first mortar injection mechanism 4 and the second mortar injection mechanism 5 have the same structure, the first mortar injection mechanism 4 includes a second mortar pipe 41, a mortar inlet pipe 42, a mortar pipe moving Z-axis 43, a mortar pipe moving X-axis 44, and a mortar injection port 45, both ends of the second mortar pipe 41 horizontally move along the mortar pipe moving X-axis 44, both mortar pipe moving X-axes 44 vertically move along the mortar pipe moving Z-axis 43, a mortar injection port 45 is disposed on a side wall of the second mortar pipe 41, a mortar inlet pipe 42 with an upward opening is disposed in the middle of the second mortar pipe 41, the mortar inlet pipe 42 and the mortar injection port 45 are connected to the inner cavity of the second mortar pipe 41, the mortar inlet pipe 42 and the grouting hose 73 are both connected to a water pump, the water pump pumps the mortar solution, the lubricating aqueous solution containing 3% polyethylene glycol or the mixed solution through the pipes, spraying and cooling the side surface of the silicon wafer in the cutting process of the silicon wafer in the photovoltaic industry by using a mortar solution containing silicon powder and lubricant components, and spraying a lubricating water solution containing 3% of polyethylene glycol to the separation position of the silicon wafer and the diamond wire in the separation process of the silicon wafer, the resin plate 2 and the diamond wire after the cutting is finished; a sliding block 46 is arranged at the joint of the mortar pipe moving X-axis 44 and the mortar pipe II 41, the sliding block 46 slides along the mortar pipe moving X-axis 44, one end of the mortar pipe II 41 is rotatably connected with the sliding block 46 through a bearing, the other end of the mortar pipe II 41 is connected with the sliding block 46 through a rotating motor 47, the rotating motor 47 is fixedly installed on the sliding block 46 through bolts, and the output end of the rotating motor 47 is fixedly connected with the mortar pipe II 41 through a motor shaft.
Referring to fig. 8 to 10, in order to better show the flow of preventing the wire hanging during the large-size silicon wafer lifting process, the present embodiment provides a method for preventing the wire hanging during the large-size silicon wafer lifting process, which includes the following steps:
s101: the resin plate 2 is perforated without cutting, and a mortar solution with a fixed flow is sprayed into the resin plate 2;
s102: in the cutting process, the push-pull mechanism 1 pushes and presses the resin plate 2 and the crystal bar 3 downwards, the diamond wire bends downwards, the crystal bar 3 and the resin plate 2 are cut, meanwhile, the first sand slurry injection mechanism 4 and the second sand slurry injection mechanism 5 inject a solution containing mortar and lubricant on the side face of the contact position of the diamond wire and the silicon wafer and the resin plate 2, the heat in the cutting process is reduced, the cutting path of the diamond wire in the cutting process is stabilized, the wire hanging and breaking and the silicon wafer scratching caused by the instability of the separation path in the separation process of the diamond wire, the silicon wafer and the resin plate 2 are reduced, the diamond wire is bent downwards in the resin plate 2 in the cutting process, and the hot melting of the resin plate 2 is reduced by injecting cooling liquid into the diamond hole in the cutting process;
s103: after cutting, the push-pull mechanism 1 lifts materials upwards, namely the resin plate 2 and the crystal bar 3 are lifted upwards, the diamond wire is bent upwards, meanwhile, the first sand slurry injection mechanism 4 and the second sand slurry injection mechanism 5 inject a solution containing mortar and lubricant at the separation position of the diamond wire and the resin plate 2 and the silicon wafer, the large-size photovoltaic silicon wafer cutting process and the separation material lifting process of the silicon wafer and the resin plate 2 and the diamond wire after cutting are applied, the friction force among the silicon wafer, the resin plate 2 and the diamond wire is reduced by accurately injecting a special component aqueous solution to the side surface of the silicon wafer through the inner cooling resin plate 2 and the special diamond shape of the cooling hole and the lifted material, so that the effects of reducing wire breakage of the diamond wire in the separation process and reducing surface scratches of the silicon wafer are achieved, the diamond wire is in the resin plate 2 after cutting, the dynamic friction force at the starting moment is reduced by the diamond structure, and the diamond structure has reliable support, the wire is formed in a downwardly bent arch shape in the resin plate 2 during the retracting process, which is superior to the rectangular and circular shapes, and the diamond wire is only sufficiently cooled by injecting the cooling liquid inside.
In summary, the following steps: according to the device and the method for preventing the wire hanging in the material lifting process of the large-size silicon wafer, the resin plate 2 with a special shape and a heat dissipation structure is used, a mortar solution with a fixed flow rate is sprayed into the resin plate 2 in the cutting process of the silicon wafer, a solution containing mortar and a lubricant is sprayed at the side surface position of the contact position of the diamond wire with the silicon wafer and the resin plate 2, the heat in the cutting process is reduced, the cutting path of the diamond wire in the cutting process is stabilized, and the wire hanging breakage and the silicon wafer scratch caused by the instability of the separation path in the separation process of the diamond wire with the silicon wafer and the resin plate 2 are reduced; after cutting, a lubricating water solution containing 3% of polyethylene glycol is sprayed to the separation position of the diamond wire, the resin plate 2 and the silicon wafer by using a heat dissipation structure of the resin plate 2 and a sand slurry spraying mechanism on two sides of the crystal bar 3, so that the distribution of a lubricant on the surface of the silicon wafer is improved, the friction force is reduced, and wire hanging and wire breakage and silicon wafer scratching are reduced; the static friction of the resin plate 2 at the position of the diamond wire and the separation of the diamond wire are approximately the same as the dynamic friction of the resin plate 2 at the position of the diamond wire and the separation of the diamond wire, so that the sudden change of the friction force is reduced, and the phenomenon that the wire is hung and broken at the position of the resin plate 2 is avoided.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be able to cover the technical solutions and the inventive concepts of the present invention within the technical scope of the present invention.
Claims (10)
1. The device for preventing the wire hanging in the material lifting process of the large-size silicon wafers is characterized by comprising a push-pull mechanism (1), a resin plate (2), a crystal bar (3), a first sand slurry injection mechanism (4), a second sand slurry injection mechanism (5) and a cutting mechanism (6), wherein the resin plate (2) is arranged at the upper end of the crystal bar (3), the crystal bar (3) and the resin plate (2) are located between the cutting mechanism (6) and the push-pull mechanism (1), the push-pull mechanism (1) pushes the crystal bar (3) and the resin plate (2) to vertically move along the cutting mechanism (6), the crystal bar (3) is cut into a plurality of silicon wafers along the cutting mechanism (6), and the first sand slurry injection mechanism (4) and the second sand slurry injection mechanism (5) are respectively arranged on the left side and the right side of the crystal bar (3).
2. The device for preventing the wire hanging in the large-size silicon wafer lifting process according to claim 1, wherein the push-pull mechanism (1) comprises a support plate (11), a push-pull assembly (12) and a U-shaped frame plate (13), the push-pull assembly (12) is mounted on the support plate (11), the U-shaped frame plate (13) is fixedly connected to the lower end of the push-pull assembly (12), the push-pull assembly (12) adjusts the distance between the support plate (11) and the U-shaped frame plate (13), and the push-pull assembly (12) is an air cylinder, a hydraulic cylinder or an electric telescopic rod.
3. The device for preventing the wire hanging in the material lifting process of the large-size silicon wafer as claimed in claim 1, wherein a plurality of through holes with two through ends are formed in the middle of the resin plate (2), adjacent through holes are parallel to each other, a sand slurry injection mechanism III (7) is arranged between the sand slurry injection mechanism I (4) and the sand slurry injection mechanism II (5), the sand slurry injection mechanism III (7) is located on one side of the resin plate (2), the sand slurry injection mechanism III (7) is used for injecting mortar solution into the through holes, and the mortar solution is used for reducing the temperature of the resin plate (2).
4. The device for preventing the wire hanging in the material lifting process of the large-size silicon wafers as claimed in claim 3, wherein the cross section of the through hole is any one of a rectangle, a circle and a diamond.
5. The device for preventing the wire hanging in the process of lifting the large-size silicon wafers as claimed in claim 3, wherein the mortar pipe I (71), the mortar nozzles (72) and the grouting hose (73) of the mortar spraying mechanism III (7), a plurality of mortar nozzles (72) which are consistent with the cross section shape of the through hole are installed on one side of the mortar pipe I (71) facing the resin plate (2), and the middle part of the upper end of the mortar pipe I (71) is communicated with the grouting hose (73).
6. The device for preventing the wire hanging in the process of extracting the large-size silicon wafers as claimed in claim 5, wherein the first mortar liquid injection mechanism (4) and the second mortar liquid injection mechanism (5) have the same structure, the first mortar liquid injection mechanism (4) comprises a second mortar pipe (41), a mortar liquid inlet pipe orifice (42), a mortar pipe moving Z-axis (43), a mortar pipe moving X-axis (44) and a mortar liquid injection orifice (45), both ends of the second mortar pipe (41) horizontally move along the mortar pipe moving X-axis (44), the two mortar pipe moving X-axes (44) vertically move along the mortar pipe moving Z-axis (43), the mortar liquid injection orifice (45) is formed in the side wall of the second mortar pipe (41), the mortar liquid inlet pipe orifice (42) with an upward opening is formed in the middle of the second mortar pipe (41), and the mortar liquid inlet pipe orifice (42), The mortar liquid jet ports (45) are connected with the inner cavity of the second mortar pipe (41).
7. The device for preventing the wire hanging in the material lifting process of the large-size silicon wafers as claimed in claim 6, wherein a sliding block (46) is arranged at the joint of the mortar pipe moving X axis (44) and the mortar pipe II (41), the sliding block (46) slides along the mortar pipe moving X axis (44), one end of the mortar pipe II (41) is rotatably connected with the sliding block (46) through a bearing, and the other end of the mortar pipe II (41) is connected with the sliding block (46) through a rotating motor (47).
8. The device for preventing the wire hanging in the material lifting process of the large-size silicon wafers as claimed in claim 1, the cutting mechanism (6) comprises a lower cutting main roller (61), a side cutting and wire receiving main roller (62), a side cutting and wire inlet main roller (63) and a cutting mesh wire (64), a cutting wire inlet side main roller (63) is arranged above the right side of the cutting lower main roller (61), a cutting wire inlet side main roller (63) is arranged above the left side of the cutting lower main roller (61), cutting mesh wires (64) are wound on the cutting lower main roller (61), the cutting wire-receiving side main roller (62) and the cutting wire-inlet side main roller (63), the cutting mesh wires (64) are composed of a plurality of mutually parallel diamond wires, the distance between every two adjacent diamond wires is equal, and a cutting mesh wire (64) between the cutting wire-receiving side main roller (62) and the cutting wire-inlet side main roller (63) is positioned between the crystal bar (3) and a lower bottom plate of the push-pull mechanism (1).
9. The device for preventing the wire hanging in the process of extracting the large-size silicon wafers as claimed in claim 7, wherein the mortar inlet pipe (42) and the grouting hose (73) are both communicated with a water pump, and the water pump pumps the mortar solution, the lubricating aqueous solution containing 3% of polyethylene glycol or the mixed solution of the mortar solution and the lubricating aqueous solution through a pipeline.
10. A wire hanging method of the device for preventing the wire hanging in the large-size silicon wafer lifting process according to any one of claims 1 to 9, comprising the steps of:
s101: the resin plate (2) is perforated without cutting, and a mortar solution with a fixed flow is sprayed into the resin plate;
s102: in the cutting process, the push-pull mechanism (1) pushes the resin plate (2) and the crystal bar (3) downwards, the diamond wire is bent downwards, the crystal bar (3) and the resin plate (2) are cut, and meanwhile, the sand slurry injection mechanism I (4) and the sand slurry injection mechanism II (5) inject a solution containing mortar and lubricant on the side face of the contact position of the diamond wire and the silicon wafer and the resin plate (2);
s103: and after cutting, the push-pull mechanism (1) lifts materials upwards, the diamond wire bends upwards, and meanwhile, the sand slurry injection mechanism I (4) and the sand slurry injection mechanism II (5) inject a solution containing mortar and a lubricant at the separation position of the diamond wire, the resin plate (2) and the silicon wafer.
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| CN202210359793.0A CN114633387A (en) | 2022-04-06 | 2022-04-06 | Device and method for preventing wire hanging in large-size silicon wafer material lifting process |
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| CN202210359793.0A CN114633387A (en) | 2022-04-06 | 2022-04-06 | Device and method for preventing wire hanging in large-size silicon wafer material lifting process |
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Address after: 519000 unit B25, 2nd floor, building 4, No. 153, Rongao Road, Hengqin New District, Zhuhai City, Guangdong Province Applicant after: Gaojing Solar Co.,Ltd. Applicant after: Guangdong Jinwan Gaojing Solar Energy Technology Co.,Ltd. Address before: 519000 unit B25, 2nd floor, building 4, No. 153, Rongao Road, Hengqin New District, Zhuhai City, Guangdong Province Applicant before: Guangdong Gaojing Solar Energy Technology Co.,Ltd. Applicant before: Guangdong Jinwan Gaojing Solar Energy Technology Co.,Ltd. |