CN1146301C - Thin film heating element - Google Patents
Thin film heating element Download PDFInfo
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- CN1146301C CN1146301C CNB998107727A CN99810772A CN1146301C CN 1146301 C CN1146301 C CN 1146301C CN B998107727 A CNB998107727 A CN B998107727A CN 99810772 A CN99810772 A CN 99810772A CN 1146301 C CN1146301 C CN 1146301C
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- heating element
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- thin film
- rare earth
- metal oxide
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 41
- 239000010409 thin film Substances 0.000 title claims abstract description 22
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 13
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 13
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims abstract description 13
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 7
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000000197 pyrolysis Methods 0.000 claims abstract description 7
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 7
- 239000011701 zinc Substances 0.000 claims abstract description 7
- YMLFYGFCXGNERH-UHFFFAOYSA-K butyltin trichloride Chemical compound CCCC[Sn](Cl)(Cl)Cl YMLFYGFCXGNERH-UHFFFAOYSA-K 0.000 claims abstract description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910001887 tin oxide Inorganic materials 0.000 claims abstract description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 19
- 150000004706 metal oxides Chemical class 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910052731 fluorine Inorganic materials 0.000 claims description 6
- 239000011737 fluorine Substances 0.000 claims description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 5
- 239000007921 spray Substances 0.000 claims description 5
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 claims description 4
- FAPDDOBMIUGHIN-UHFFFAOYSA-K antimony trichloride Chemical group Cl[Sb](Cl)Cl FAPDDOBMIUGHIN-UHFFFAOYSA-K 0.000 claims description 2
- 235000005074 zinc chloride Nutrition 0.000 claims description 2
- 239000011592 zinc chloride Substances 0.000 claims description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims 4
- 238000000137 annealing Methods 0.000 claims 1
- NPAIMXWXWPJRES-UHFFFAOYSA-N butyltin(3+) Chemical compound CCCC[Sn+3] NPAIMXWXWPJRES-UHFFFAOYSA-N 0.000 claims 1
- 125000001153 fluoro group Chemical group F* 0.000 claims 1
- 239000010408 film Substances 0.000 description 23
- 239000002019 doping agent Substances 0.000 description 5
- 150000002910 rare earth metals Chemical class 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000002241 glass-ceramic Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000976 ink Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000009183 running Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 238000004378 air conditioning Methods 0.000 description 1
- 229940037003 alum Drugs 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000004087 circulation Effects 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 230000001447 compensatory effect Effects 0.000 description 1
- 238000010411 cooking Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000010458 rotten stone Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000010257 thawing Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Resistance Heating (AREA)
- Surface Heating Bodies (AREA)
Abstract
A thin film heating element capable of withstanding power densities of 10 to 20 watts cm<-2> and/or temperatures up to 650 DEG C is disclosed. The preferred form of the heating element includes a layer of tin oxide doped with relatively large quantities of cerium and lanthanum deposited on an insulating substrate by pyrolysis of a solution of monobutyl tin trichloride containing the above rare earth elements. The solution and subsequent oxide layer further include donor and acceptor elements such as antimony and zinc to enhance the conductivity of the heating element.
Description
Technical field
The present invention relates to comprise the heating element of a conductive metal oxide film one class on the electrical insulating substrate.
Background technology
This device is known, and can be such as being made up of a tin oxide film that is deposited on the substrate of glass by means of the pyrolytic deposition effect.
If this thin film heating element will be used in such as among the such electrical equipment of cooking table (cooktops), wish that then they can operate under up to 650 ℃ high temperature.Under the very little such application scenario such as insulating pot of heating element, element must be able to be dealt with the high power density of 10-20 watt centimetre-2 magnitudes.It is gratifying that device in the prior art never proves under these conditions.The applicant finds, each tin oxide layer since oxide change state trend and along with increase in temperature is tending towards becoming non-stable.Also find, be used as the place of a kind of electron donor or conduction carrier at fluorine, because fluorine trends towards leaving film being higher than under 400 ℃ the temperature, the various character of film irreversibly change along with increase in temperature significantly.
We also find, are used for the various tin chloride solution of prior art, such as in the spray pyrolytic process, be unsettled owing to its hygroscopic nature under high humidity, and this can cause lacking uniformity in the sull of being produced.
People's such as Auding United States Patent (USP) has illustrated that purpose is used for the thin-film component of temperature more than 600 ℃ for the 4th, 889, No. 974, adopts many sulls that compensatory foreign matter atom height is mixed up.Metal-oxide film mixes up the foreign matter the atom how one-tenth of maximum 10 gram molecule % compensates one another over the ground, and described being subjected to mainly constitutes element and described alms giver and constitute element and differ 10% at most.The patent description of Auding use indium, boron, aluminium or zinc mainly constitute dopant as being subjected to, and antimony or fluorine constitute dopant as the alms giver.
But, adopt these films of tin chloride to be found in and be difficult to deposit in the moist atmosphere, concurrent now for being unsettled under required 20 watts every square centimeter the power density haply in fast rise time application scenario.
Known to the applicant, illustrated film is not seen commercial the application always in the Auding patent, and just learns from file.
Summary of the invention
The applicant finds, two kinds of rare earth elements preferably by mixing up at least a, the metal oxide layer that can obtain to have gratifying stability under the high power density application scenario.And find, by depositing this layer, can further improve stability with being different from previous used starting soln (starting solution).The rare earth doped thing is cerium and lanthanum preferably.Preferably these two kinds of rare earth elements exist with the identical concentration of cardinal principle.The applicant finds, has each rare earth doped thing in thin layer, has the effect of the stable metal state of oxidation.
We also find, alms giver by further mixing up equivalent and recipient element and by avoiding fluorine can obtaining stability at high temperature as dopant.Best donor for this purpose and recipient element are respectively antimony and zinc.
On the one hand, the invention reside in a kind of thin-film electro heating element, be included in the conductive metal oxide layer on the electrical insulating substrate, described metal oxide layer mixes up at least a rare earth element, and is deposited in the described substrate by a kind of organic metal original solution.
Preferably, metal oxide is deposited in the substrate by the organic metal original solution (organometallic base solution) that pyrolysis one contains at least a rare earth element.
In a kind of best formation, metal oxide layer is tin-oxide and two kinds of rare earth metals that contain such as cerium and lanthanum.
Of the present invention this provides a kind of thin film heating element on the one hand, can bear up to the power density of 10-20 watt centimetres-2 and/or surpasses 600 ℃ temperature.
On the other hand, the invention reside in a kind of method that is used to make a kind of thin film heating element, the step that comprises is that an organic metal original solution that contains at least a rare earth metal by pyrolysis is deposited on the electrical insulating substrate metal oxide layer.
Preferably, described original solution contains cerium and the lanthanum up to the concentration of 5 gram molecule %.
We find, if film then can obtain excellent results by being prepared into by the pyrolysis of a kind of monobutyl-tin-trichloride solution spraying.The stability of this material in high humility by reducing the premature oxidation effect, can experience the atmospheric conditions that changing and obtains consistent result.
Description of drawings
Fig. 1 is a figure line, shows the power dissipation and the time relationship of a kind of thin film heating element of making according to the present invention.
Fig. 2 shows the 5 kinds of elements relation between temperature and the power under stable state with power rating between 500 and 1330 watts.
Embodiment
Though can obtain certain benefit because the concentration of rare earth doped thing is quite low, but concentration is that the situation of 0.01 gram molecule % will be seen minimum effect in pyrolysis solution, and cerium and lanthanum optium concentration separately is at 1.25 gram molecule % haply and haply between the 3.75 gram molecule %.Some preliminary tests show that when two kinds of rare earth elements that adopt substantially the same concentration, during such as cerium and lanthanum, it is maximum that the stability of metal oxide layer reaches.In general, the concentration of these rare earth elements will be chosen as under the power density that film is intended for and help thin film stability.Be intended for the optimum of film 20 watts of centimetres of-2 times runnings and adopted haply that the same concentrations of 2.5 gram molecule % is obtained.
Film preferably mixes up the alms giver and the recipient element of equivalent basically, and best dopant is antimony and zinc.The two concentration of antimony and zinc all can be subjected to the influence of required resistivity.We find that near the original solution concentration of these materials 2.8 gram molecule % is suitable for the heating element application scenario.
A kind of useful feature of this film when it is used as heating element comes from the positive temperature coefficient resistor of film.This makes may produce the element of self-control, and promptly they will operate under a higher wattage at first, and along with increase in temperature, can be stabilized in lower design wattage place.
Base material will be selected certainly to adapt to the application scenario.Suitable substrate comprises glass ceramics, silicon nitride and other ceramic bases and is coated with metallic substrates high-temperature stable, electrical insulating material.
Be used to apply at the bottom of the best base of original solution of band dopant from 500 to 750 ℃ of temperature ranges.Preferably, for applying under 500 ℃, carry out haply 600 ℃ down at least one hour after-baking to assist stabilizing films.
Film utilization spray pyrolytic process according to the invention is made from a kind of solution.For this purpose, monobutyl-tin-trichloride is used as a kind of original solution, has the antimony chloride of 2.8 gram molecule %, the zinc chloride of 2.8 gram molecule %, the cerium of 2.5 gram molecule % and the lanthanum of 2.5 gram molecule %.
These films were once made to such an extent that have the effective resistance of 26 ohm, 30 ohm and 45 ohm so that may use the heater that is respectively 2.2 kilowatts, 1.8 kilowatts and 1.2 kilowatts by 240V supply voltage power supply.This film once left selectively to use various high temperature mask inks to give deposit, and ink is fallen by brush after thin film deposition.The film of institute's deposit has very high transparency.The electrical resistance property of heating element remains unchanged afterwards in 650 ℃ of following 3500 circulations (connecting in 40 minutes and disconnection in 20 minutes).
As noted before, the positive temperature coefficient of these component resistances makes and may obtain a kind of self-control feature, has initial very high power dissipation and can help realizing comparatively promptly rising to operational temperature.Fig. 1 shows the typical proterties of these elements, and wherein power dissipation drew with respect to the running time.Just like it will be appreciated that like that, the dissipating of element starts from a higher energy level place and along with component resistance reduces with increase in temperature, till reaching a kind of limit at design power consumption figures place.One when such as by having colder object to be heated to contact with one during temporary transient cooling element, and power dissipation will temporarily increase, and helps to reach rapid heating.
Fig. 2 shows 5 elements with power rating between 500 and 1330 watts relation between temperature and the power under stable state.
Life test shows, film in power density above 15.5 watts/centimetre
2Situation under under up to 650 ℃ temperature, in the inert substrate as the silicon dioxide of 96% quartz, be stable especially.All is stable up to 500 ℃ having film on the glass ceramics alkaline impurities such such as lithium and sodium, low grade under very high power density.
By changing the spray pass, made the plate resistance that changes to more than 400 ohm from about 60 ohm.Film thickness can change between about 14000 dusts at 2000 dusts by changing the spray pass.Film is to be deposited on to comprise the multiple suprabasil of glass ceramics, alum clay, tripoli glass and silicon nitride.
According to film of the present invention, together with its adaptability, also can be used in cryogenic applications, such as hot-water heating heating, freezing defrosting and general heating for high temperature and/or high rise time application scenario.Use the tubular heating element that above technology makes and to be used among the various heat exchangers of liquid stream application scenario, air-conditioning reheater, hairdressing hair-dryer, laundry and dryer, and also can be used as heat-delivery surface.
Though every specific embodiment of the present invention explains, be apparent that for skilled person in the art the present invention can be embodied in and do not depart from its essential characteristic in other various particular forms.Therefore each embodiment and each example should regard illustrative and nonrestrictive as in all respects, category of the present invention is then shown by the explanation of appended every claim rather than front, and therefore all changes that are equal within meaning and the scope that are in every claim all are defined as being included within every claim.
Claims (29)
1. a thin-film electro heating element is included in the conductive metal oxide layer on the electrical insulating substrate, and described metal oxide layer mixes up at least a rare earth element, and is deposited in the described substrate by a kind of organic metal original solution.
2. according to the described a kind of thin film heating element of claim 1, wherein said metal oxide layer comprises at least two kinds of rare earth elements.
3. according to the described a kind of thin film heating element of claim 2, wherein said two kinds of rare earth elements appear among the described metal oxide layer with identical concentration.
4. according to claim 2 or 3 described heating elements, wherein said at least two kinds of rare earth elements comprise cerium and lanthanum the two.
5. according to the described a kind of heating element of claim 1, wherein said metal oxide is a tin-oxide.
6. according to the described a kind of heating element of claim 2, wherein said metal oxide layer also comprises the alms giver and the recipient element of equal number.
7. according to the described a kind of heating element of claim 6, wherein said alms giver and recipient element are respectively antimony and zinc.
8. according to the described a kind of heating element of claim 6, wherein said metal oxide layer is not fluorine-containing.
9. according to the described a kind of heating element of claim 1, wherein said heating element is at 20 watts centimetres
-2Power density under be stable.
10. according to the described a kind of heating element of claim 1, wherein said heating element is stable under 650 ℃ of temperature.
11. according to the described a kind of thin film heating element of claim 1, wherein should or each rare earth element among concentration appears at described original solution under up to 5 gram molecule %.
12. according to the described a kind of thin film heating element of claim 11, wherein said at least a rare earth element comprise cerium and lanthanum the two.
13., wherein appear among the described original solution in the scope of each comfortable 1.25 gram molecule % to 3.75 gram molecule % of cerium and lanthanum according to the described a kind of thin film heating element of claim 12.
14. according to the described a kind of thin film heating element of claim 13, wherein the concentration among each comfortable described solution of cerium and lanthanum is 2.5 gram molecule %.
15. according to the described a kind of thin film heating element of claim 1, wherein said original solution also comprises the alms giver and the recipient element of equal number.
16. according to the described a kind of thin film heating element of claim 15, wherein said alms giver and recipient element are respectively to appear among the described solution under the concentration of antimony and zinc and each comfortable 2.8 gram molecule % separately.
17. according to claim 1 or 12 described a kind of thin film heating elements, wherein said original solution is monobutyl-tin-trichloride (monobutyl tin trichlaride).
18. according to the described a kind of thin film heating element of claim 1, wherein said metal oxide layer utilizes a kind of spray pyrolytic process to be deposited in the described substrate by a kind of organic metal original solution.
19. a method that is used to make a kind of thin film heating element, the step that comprises is: contain the organic metal original solution of at least a rare earth element and a metal oxide layer is deposited on the electrical insulating substrate by pyrolysis one.
20. according to the described a kind of method of claim 19, wherein said solution contains at least two kinds of rare earth elements.
21. according to the described a kind of method of claim 20, wherein said two kinds of rare earth elements appear among the described solution with identical concentration.
22. according to the described a kind of method of claim 19, wherein said at least a rare earth element appears among the described solution in the scope of 1.25 gram molecule % to 3.75 gram molecule %.
23. according to the described a kind of method of claim 20, wherein said at least two kinds of rare earth elements comprise cerium and lanthanum the two.
24. according to the described a kind of method of claim 23, wherein said cerium and lanthanum appear among the described solution with identical concentration separately.
25. according to the described a kind of method of claim 19, wherein said original solution is a monobutyl-tin-trichloride.
26. according to the described a kind of method of claim 19, wherein said solution also comprises the chloride of at least a alms giver and at least a recipient element, described alms giver's chloride with appeared among the described solution with identical concentration by main chloride.
27. according to the described a kind of method of claim 26, wherein said alms giver's chloride is antimony chloride and the described muriatic zinc chloride of master that is subjected to.
28. according to the described a kind of method of claim 19, wherein said solution is not fluorine-containing.
29. it is, further comprising the steps of: as during temperature is higher than described pyrolysis, to make described suprabasil described metal oxide layer annealing at least one hour under the situation of used base reservoir temperature according to the described a kind of method of claim 19.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AUPP5995 | 1998-09-18 | ||
| AUPP5995A AUPP599598A0 (en) | 1998-09-18 | 1998-09-18 | Self-regulating nanoscale heating element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1317223A CN1317223A (en) | 2001-10-10 |
| CN1146301C true CN1146301C (en) | 2004-04-14 |
Family
ID=3810212
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB998107727A Expired - Fee Related CN1146301C (en) | 1998-09-18 | 1999-09-17 | Thin film heating element |
Country Status (10)
| Country | Link |
|---|---|
| EP (1) | EP1120014A4 (en) |
| JP (1) | JP2002525829A (en) |
| KR (1) | KR20010079859A (en) |
| CN (1) | CN1146301C (en) |
| AU (1) | AUPP599598A0 (en) |
| BR (1) | BR9913812A (en) |
| CA (1) | CA2344486A1 (en) |
| ID (1) | ID29148A (en) |
| NZ (1) | NZ510655A (en) |
| WO (1) | WO2000018189A1 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10110792B4 (en) * | 2001-03-06 | 2004-09-23 | Schott Glas | Ceramic cooking system with glass ceramic plate, insulation layer and heating elements |
| DE10110789C1 (en) * | 2001-03-06 | 2002-07-04 | Schott Glas | Electrical cooking appliance with non-planar three-dimensional cooking surface of glass or glass ceramic material directly contacted on its outside by resistance heating device |
| JP2007512665A (en) | 2003-11-20 | 2007-05-17 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Thin film heating element |
| CN100466865C (en) * | 2005-03-21 | 2009-03-04 | 冷同桂 | Composite metal electrothermic film sol and preparing process thereof |
| US8193475B2 (en) * | 2007-02-13 | 2012-06-05 | Advanced Materials Enterprises Company Limited | Heating apparatus and method for making the same |
| US7926209B2 (en) | 2007-02-13 | 2011-04-19 | Advanced Materials Enterprises Company Limited | Electric iron |
| WO2009105945A1 (en) * | 2008-02-28 | 2009-09-03 | Advanced Materials Enterprises Co., Ltd. | Electric iron |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU886328A1 (en) * | 1980-03-28 | 1981-11-30 | Институт Электроники Ан Белсср | Current conducting material for film electric heaters |
| DE3324647A1 (en) * | 1983-07-08 | 1985-01-17 | Schott Glaswerke, 6500 Mainz | DIVING METHOD FOR THE PRODUCTION OF TRANSPARENT, ELECTRICALLY CONDUCTIVE, DOPED INDIUMOXIDE LAYERS |
| DE3705639A1 (en) * | 1987-02-21 | 1988-09-01 | Philips Patentverwaltung | THICK LAYER HEATING ELEMENT |
| JPH07105282B2 (en) * | 1988-05-13 | 1995-11-13 | 富士ゼロックス株式会社 | Resistor and method of manufacturing resistor |
| CN1036432C (en) * | 1992-07-09 | 1997-11-12 | 连铁军 | Thermostable transparent electric heating film and its producing method |
| US5616266A (en) * | 1994-07-29 | 1997-04-01 | Thermal Dynamics U.S.A. Ltd. Co. | Resistance heating element with large area, thin film and method |
-
1998
- 1998-09-18 AU AUPP5995A patent/AUPP599598A0/en not_active Abandoned
-
1999
- 1999-09-17 JP JP2000571716A patent/JP2002525829A/en active Pending
- 1999-09-17 CN CNB998107727A patent/CN1146301C/en not_active Expired - Fee Related
- 1999-09-17 CA CA002344486A patent/CA2344486A1/en not_active Abandoned
- 1999-09-17 NZ NZ510655A patent/NZ510655A/en unknown
- 1999-09-17 WO PCT/AU1999/000791 patent/WO2000018189A1/en not_active Application Discontinuation
- 1999-09-17 EP EP99947118A patent/EP1120014A4/en not_active Withdrawn
- 1999-09-17 ID IDW20010871A patent/ID29148A/en unknown
- 1999-09-17 KR KR1020017003505A patent/KR20010079859A/en not_active Application Discontinuation
- 1999-09-17 BR BR9913812-3A patent/BR9913812A/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP1120014A4 (en) | 2004-06-16 |
| NZ510655A (en) | 2003-05-30 |
| JP2002525829A (en) | 2002-08-13 |
| KR20010079859A (en) | 2001-08-22 |
| WO2000018189A1 (en) | 2000-03-30 |
| CN1317223A (en) | 2001-10-10 |
| ID29148A (en) | 2001-08-02 |
| EP1120014A1 (en) | 2001-08-01 |
| AUPP599598A0 (en) | 1998-10-08 |
| BR9913812A (en) | 2001-08-14 |
| CA2344486A1 (en) | 2000-03-30 |
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