CN114628620B - Patterning method for film layer with poor drug solution tolerance - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000000059 patterning Methods 0.000 title claims abstract description 27
- 239000003814 drug Substances 0.000 title claims abstract description 13
- 229940079593 drug Drugs 0.000 title claims abstract description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 55
- 238000004806 packaging method and process Methods 0.000 claims abstract description 44
- 238000004380 ashing Methods 0.000 claims abstract description 34
- 238000005530 etching Methods 0.000 claims abstract description 27
- 238000009832 plasma treatment Methods 0.000 claims abstract description 16
- 238000002360 preparation method Methods 0.000 claims abstract description 14
- 238000004026 adhesive bonding Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 74
- 239000010408 film Substances 0.000 claims description 68
- 239000007789 gas Substances 0.000 claims description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- 238000010894 electron beam technology Methods 0.000 claims description 16
- 239000010409 thin film Substances 0.000 claims description 7
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 229910052731 fluorine Inorganic materials 0.000 claims description 6
- 239000011737 fluorine Substances 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 6
- 230000007797 corrosion Effects 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims description 3
- 238000011010 flushing procedure Methods 0.000 claims description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 3
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 3
- 238000011161 development Methods 0.000 abstract description 9
- 210000002381 plasma Anatomy 0.000 description 13
- 239000007788 liquid Substances 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 238000003384 imaging method Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920006280 packaging film Polymers 0.000 description 1
- 239000012785 packaging film Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
Abstract
The invention discloses a patterning method for a film layer with poor drug solution tolerance, which comprises the steps of film packaging layer preparation, film packaging layer film forming, gluing and pre-baking, plasma treatment, exposure, ashing, etching and photoresist removal. The patterning can be completed without wet development, and the preparation of the film packaging layer is carried out, so that the yield damage of the film packaging layer caused by the drug solution tolerance is avoided.
Description
Technical Field
The invention belongs to the technical field of silicon-based display, and particularly relates to a patterning method for a film layer with poor liquid medicine tolerance.
Background
In the conventional imaging process of silicon-based micro display, the general flow is that photoresist is coated, pre-baking (soft baking), exposure, post-baking (PEB), development, main curing (hard baking), and etching is carried out after the imaging is completed, so that the transfer printing of the graph is completed, and the imaging purpose is achieved. However, part of the film layers, such as the film packaging layer, are poor in chemical solution tolerance due to the influence of the property of the film layers, and in the development process, the wet development is usually adopted, and the chemical solution is TMAH and KOH, so that the chemical solution can generate certain damage to the film packaging film layer, cause subsequent packaging failure, generate dead points and dark point abnormality, and influence the yield.
One of the most main reasons for restricting the rapid development of silicon-based micro-display at present is that the preparation yield is too low, which causes the overlarge production cost. In the yield loss, the defects of black spots, dark spots and the like of the display screen caused by water oxygen corrosion occupy a large part because of the failure of the packaging layer, so that the improvement of the thin film packaging layer preparation process is urgent.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a patterning method for a film layer with poor liquid medicine tolerance, which can complete patterning without wet development, prepare a film packaging layer and avoid yield damage of the film packaging layer caused by the liquid medicine tolerance.
In order to achieve the above purpose, the technical scheme of the invention is as follows: the patterning method for the film layer with poor liquid medicine tolerance comprises the steps of film forming of the film packaging layer, gluing and pre-baking, plasma treatment, exposure, ashing, etching and photoresist removal.
Further, the patterning method based on the preparation of the film packaging layer comprises the following steps:
step a, carrying out film packaging layer film forming operation on the substrate with the anode, the pixel definition layer and the evaporation process to obtain a first substrate;
step b, gluing and pre-baking the first substrate to obtain a second substrate;
Step c, carrying out plasma treatment on the second substrate to obtain a third substrate;
Step d, exposing the third substrate to obtain a fourth substrate;
Step e, ashing and etching the fourth substrate to obtain a fifth substrate;
f, photoresist removing operation is carried out on the fifth substrate, and a sixth substrate is obtained; thus finishing the preparation of the film packaging layer.
Further, the specific operation of the step a is as follows: and (3) forming a film packaging layer on the substrate with the anode, the pixel definition layer and the evaporation process, wherein the film is formed by adopting a PECVD+ALD mode, the film is of a SiN/Al 2O3 laminated structure, the thickness of the SiN layer is 400-500 nm, and the thickness of the Al 2O3 layer is 30-40 nm.
Further, the specific operation of the step b is as follows: photoresist gluing operation is carried out on the first substrate after film forming of the film packaging layer is completed, positive photoresist is selected as photoresist, the model is RE300.18.15PMMA photoresist, and the thickness of the photoresist is 2.2 um-2.4 um; and pre-baking the glued substrate at 90+/-5 ℃ for 60+/-10 seconds.
Further, the specific operation of the step c is as follows: and (3) performing fluorine-based and oxygen-based plasma treatment on the second substrate after photoresist coating and pre-baking, wherein the flow of the adopted plasma gas is CF 4、O2,CF4 -22 sccm, the flow of O 2 is 3-5 sccm, the control pressure is 10 mTorr-12mTorr,Source Power, 150-160W, bias power is 30-40W, and the etching time is 5 s+/-10 s.
Further, the specific operation of the step d is as follows: exposing the third substrate subjected to plasma treatment by using a deep ultraviolet light beam or an electron beam, wherein the deep ultraviolet light beam exposure adopts 248nm deep ultraviolet light, and the exposure amount is selected to be 350mJ/cm 2; the electron beam exposure was performed using an e-beam, and the electron beam power was selected to be 50kev.
Further, the ashing rate of the oxygen plasma to the deep ultraviolet beam exposure or electron beam exposure area is 3 to 4 times of the ashing rate of the unexposed area.
Further, the specific operation of the step e is as follows: ashing and dry etching the exposed fourth substrate, and ashing by adopting an oxygen plasma method; the ashing adopts gas O 2,O2 flow to control the flow to be 30 sccm-40 sccm, the Source Power is controlled to be 40W-50W during ashing, the bias Power is controlled to be 0W, the pressure is controlled to be 5 mTorr-7 mTorr, and the ashing time is controlled to be 30-32 s; after ashing is completed, the photoresist in the exposed area is completely removed, and the photoresist in the unexposed area is left for 1.4um to 1.6um, so that patterning is completed.
Further, after the ashing of the fourth substrate is completed, dry etching is performed on the thin film encapsulation layer, and an ICP etching mode is adopted, wherein etching gas is BCl 3、Cl2、Ar、CF4、O2, the flow rate of BCl 3 is 40 sccm-50 sccm, the flow rate of Cl 2 is 10 sccm-15 sccm, the flow rate of Ar is 15 sccm-20 sccm, the flow rate of CF 4 is 30 sccm-40 sccm, the flow rate of O 2 is 5 sccm-7 sccm, the pressure during etching is controlled to be 5 mTorr-8mTorr,Source Power, the pressure during etching is controlled to be 350W-380W, and the bias power is controlled to be 130W-150W, and the etching time is 190s±5s.
Further, the step f specifically comprises the following steps: carrying out wet photoresist stripping on the ashed and etched fifth substrate, and adopting NMP to remove glue solution in a soaking and flushing mode; and removing the photoresist from the fifth substrate to obtain a sixth substrate, namely finishing the thin film packaging layer process.
The technical scheme of the invention has the advantages that:
After the positive photoresist is coated with glue and baked before, fluorine-based and oxygen-based plasmas are adopted to treat the substrate, deep ultraviolet light beams or electron beam exposure is adopted after the treatment is finished, and finally oxygen ashing treatment is utilized to achieve the imaging effect; the patterning mode avoids wet development by adopting liquid medicines such as TMAH, KOH and the like, avoids damage to the film packaging layer and improves the yield of the film packaging layer.
Drawings
The invention is described in further detail below with reference to the attached drawings and detailed description:
FIG. 1 is a schematic illustration of film formation of a thin film encapsulation layer according to the present invention;
FIG. 2 is a schematic diagram of the glue application and pre-bake treatment of the present invention;
FIG. 3 is a schematic view of a plasma process of the present invention;
FIG. 4 is a schematic view of an exposure process according to the present invention;
FIG. 5 is a schematic view of an ashing process according to the present invention;
FIG. 6 is a schematic diagram of an etching process according to the present invention;
FIG. 7 is a schematic diagram of the photoresist stripping process according to the present invention.
The labels in the above figures are respectively: 1. a first substrate; 2. a second substrate; 3. a third substrate; 4. a fourth substrate; 5.a fifth substrate; 6. and a sixth substrate.
Detailed Description
In the present invention, it is to be understood that the term "length"; "width"; "go up"; "Down"; "front"; "rear"; "left"; "right"; "vertical"; "horizontal"; "roof"; "bottom", "inner"; "outside"; "clockwise"; "counterclockwise"; "axial"; "planar orientation"; the orientation or positional relationship indicated by "circumferential" or the like is based on the orientation or positional relationship shown in the drawings, and is merely for convenience of description and simplification of description, and is not indicative or implying that the apparatus or element to be referred to must have a specific orientation; constructed and operated in a particular orientation and therefore should not be construed as limiting the invention.
PECVD is enhanced plasma chemical vapor deposition, ALD is atomic deposition, source Power is Power, bias Power is Bias Power, e-beam is electron beam, PMMA is acrylic or organic glass.
As shown in fig. 1 to 7, a patterning method for a film layer with poor drug solution tolerance comprises the steps of film packaging layer preparation, wherein the film packaging layer preparation process comprises film forming, gluing, pre-baking, plasma treatment, exposure, ashing, etching and photoresist removal. The patterning can be completed without wet development, and the preparation of the film packaging layer is carried out, so that the yield damage of the film packaging layer caused by the drug solution tolerance is avoided.
The patterning method based on the preparation of the film packaging layer comprises the following steps:
Step a, carrying out film packaging layer film forming operation on the substrate with the anode, the pixel definition layer and the evaporation process to obtain a first substrate 1; the specific operation is as follows: and (3) forming a film packaging layer on the substrate with the anode, the pixel definition layer and the evaporation process, wherein the film is formed by adopting a PECVD+ALD mode, the film is of a SiN/Al 2O3 laminated structure, the thickness of the SiN layer is 400-500 nm, and the thickness of the Al 2O3 layer is 30-40 nm. The thickness of the film layer is slightly smaller than that of a conventional packaging layer, so that the film layer is treated in a non-wet developing mode, namely in a plasma mode, the damage to the film layer is small, the thickness of the packaging layer can be reduced to a certain extent, the thickness of the film packaging layer is reduced, the productivity is improved to a certain extent, and the production cost is reduced.
Step b, gluing and pre-baking the first substrate 1 to obtain a second substrate 2; the specific operation is as follows: photoresist gluing operation is carried out on the first substrate 1 after film forming of the film packaging layer is completed, positive photoresist is selected as photoresist, the model is RE300.18.15PMMA photoresist, and the thickness of the photoresist is 2.2 um-2.4 um; and pre-baking the glued substrate at 90+/-5 ℃ for 60+/-10 seconds. The pre-baking temperature and time are strictly controlled, and the time and the temperature provided by the invention are selected to be favorable for enhancing the adhesiveness of the photoresist and stabilizing the exposure characteristic of the photoresist, so that the residual film rate is reduced. It should be noted that in this step, the photoresist must be a positive photoresist to match the process implementation method of the present invention, and the resolution of the RE300.18.15PMMA photoresist can meet the requirements.
Step c, performing plasma treatment on the second substrate 2 to obtain a third substrate 3; the specific operation is as follows: the second substrate 2 after photoresist gumming and pre-baking is subjected to fluorine-based and oxygen-based plasma treatment, the adopted plasma gas is CF 4、O2, and after the treatment of CF 4 and O 2, the corrosion resistance of the photoresist is improved; the flow rate of CF 4 is 20 sccm-22 sccm, the flow rate of O 2 is 3 sccm-5 sccm, the pressure of the processing chamber is controlled to be 10 mTorr-12mTorr,Source Power to be 150W-160W, the bias power is 30W-40W, and the etching time is 5 s+/-10 s during plasma treatment; after the fluorine-based and oxygen-based plasmas are treated by the step, the corrosiveness of the photoresist to the oxygen plasmas can be enhanced. The selection of parameters in the step is not single, and the parameters are matched, so that the aim of improving the corrosion resistance of the photoresist can be achieved only by matching the parameters.
Step d, exposing the third substrate 3 to obtain a fourth substrate 4; the specific operation is as follows: exposing the third substrate 3 subjected to plasma treatment by using a deep ultraviolet beam or an electron beam, wherein the deep ultraviolet beam exposure adopts 248nm deep ultraviolet, and the exposure amount is selected to be 350mJ/cm 2; e-beam is adopted for electron beam exposure, and 50kev is adopted for electron beam capacity; the ashing rate of oxygen plasma to the deep ultraviolet beam exposure or electron beam exposure area is 3-4 times of the ashing rate of the unexposed area. Since the photoresist in the earlier stage is subjected to plasma treatment, the conventional exposure mode cannot be used for exposure, and only the electron beam with shorter wavelength or larger energy, such as the deep ultraviolet beam, is selected for exposure, so that the photoresist after the plasma treatment can be exposed.
Step e, ashing and etching the fourth substrate 4 to obtain a fifth substrate 5; the specific operation is as follows: ashing and dry etching the exposed fourth substrate 4, and ashing by using an oxygen plasma method; the ashing adopts gas O 2,O2 flow to control the flow to be 30 sccm-40 sccm, the Source Power of the process chamber is controlled to be 40W-50W, the bias Power is controlled to be 0W, the pressure is controlled to be 5 mTorr-7 mTorr, and the ashing time is controlled to be 30-32 s; after ashing is completed, the photoresist in the exposed area is completely removed, and the photoresist in the unexposed area is left for 1.4um to 1.6um, so that patterning is completed. In the step, the photoresist in the exposed area can be precisely removed by gas selection and parameter control, so that the residual quantity of the photoresist in the unexposed area can be precisely controlled.
After the fourth substrate 4 is ashed, dry etching is performed on the film encapsulation layer, an ICP etching mode is adopted, etching gas adopts BCl 3、Cl2、Ar、CF4、O2, the flow rate of gas BCl 3 is 40-50 sccm, the flow rate of gas Cl 2 is 10-15 sccm, the flow rate of gas Ar is 15-20 sccm, the flow rate of gas CF 4 is 30-40 sccm, the flow rate of gas O 2 is 5-7 sccm, the pressure of a process chamber is controlled to be 5 mTorr-8mTorr,Source Power and 350-380W, and bias power is controlled to be 130-150W, and the etching time is 190s + -5 s. In the step, gas selection and parameter control can obtain an expected etching result, and the appearance of the film packaging layer is achieved.
Step f, photoresist removing operation is carried out on the fifth substrate 5 to obtain a sixth substrate 6; the specific operation is as follows: carrying out wet photoresist stripping on the ashed and etched fifth substrate 5, and adopting NMP to remove glue solution in a soaking and flushing mode; and (3) removing the photoresist from the fifth substrate 5 to obtain a sixth substrate 6, and completing the thin film packaging layer process, namely completing the preparation of the thin film packaging layer.
After the positive photoresist is coated with glue and baked before, fluorine-based and oxygen-based plasmas are adopted to treat the substrate, deep ultraviolet light beams or electron beam exposure is adopted after the treatment is finished, and finally oxygen ashing treatment is utilized to achieve the imaging effect; the patterning mode avoids wet development by adopting liquid medicines such as TMAH, KOH and the like, avoids damage to the film packaging layer and improves the yield of the film packaging layer.
While the invention has been described above with reference to the accompanying drawings, it will be apparent that the invention is not limited to the above embodiments, but is capable of being modified in various ways, or of being applied to other applications without modification, without departing from the scope of the invention.
Claims (9)
1. A patterning method for a film layer with poor drug solution tolerance is characterized by comprising the following steps: the preparation method comprises the steps of preparing a film packaging layer, wherein the film packaging layer is formed, gluing, pre-baking, plasma treatment, exposure, ashing, etching and photoresist removal; the patterning method based on the preparation of the film packaging layer comprises the following steps:
step a, carrying out film packaging layer film forming operation on the substrate with the anode, the pixel definition layer and the evaporation process to obtain a first substrate (1);
Step b, gluing and pre-baking the first substrate (1) to obtain a second substrate (2); the specific operation of the step b is as follows: photoresist gumming operation is carried out on the first substrate (1) with the film formed by the film packaging layer, and PMMA positive photoresist is selected as the photoresist;
C, performing plasma treatment on the second substrate (2) to obtain a third substrate (3); the specific operation of the step c is as follows: performing fluorine-based and oxygen-based plasma treatment on the second substrate (2) after photoresist gluing and pre-baking, wherein the flow of the adopted plasma gas is CF 4、O2, CF4, the flow of O 2 is 3-5 sccm, and the corrosion resistance of the photoresist to oxygen plasma is enhanced;
Step d, exposing the third substrate (3) to obtain a fourth substrate (4); the specific operation of the step d is as follows: exposing the third substrate (3) subjected to plasma treatment by using a deep ultraviolet beam or an electron beam;
Step e, ashing and etching the fourth substrate (4) to obtain a fifth substrate (5); the specific operation of the step e is as follows: ashing and dry etching the exposed fourth substrate (4), and ashing by using an oxygen plasma method; the ashing adopts gas O 2;
F, performing photoresist removing operation on the fifth substrate (5) to obtain a sixth substrate (6); thus finishing the preparation of the film packaging layer.
2. A method for patterning a poorly tolerated film layer as claimed in claim 1, characterized in that: the specific operation of the step a is as follows: and (3) forming a film packaging layer on the substrate with the anode, the pixel definition layer and the evaporation process, wherein the film is formed by adopting a PECVD+ALD mode, the film is of a SiN/Al 2O3 laminated structure, the thickness of the SiN layer is 400-500 nm, and the thickness of the Al 2O3 layer is 30-40 nm.
3. A method for patterning a poorly tolerated film layer as claimed in claim 2, characterized in that: the model of the photoresist in the step b is RE300.18.15 PMMA photoresist, and the thickness of the photoresist is 2.2 um-2.4 um; and pre-baking the glued substrate at 90+/-5 ℃ for 60+/-10 seconds.
4. A method for patterning a poorly tolerated film layer as claimed in claim 3, characterized in that: in the step c, the control pressure is 10 mTorr-12mTorr,Source Power, 150W~160W,Bias power is 30-40W, and the etching time is 5s +/-10 s.
5. A method of patterning a poorly resistant film layer as claimed in claim 4, wherein: in the step d, 248nm deep ultraviolet is adopted for exposure of the deep ultraviolet light beam, and the exposure amount is selected to be 350mJ/cm 2; the electron beam exposure was performed using an e-beam, and the electron beam power was selected to be 50kev.
6. A method of patterning a poorly resistant film layer as claimed in claim 5, wherein: the ashing rate of the oxygen plasma to the deep ultraviolet beam exposure or electron beam exposure area is 3-4 times of the ashing rate of the unexposed area.
7. A method of patterning a poorly tolerated film layer as set forth in claim 6, characterized in that: in the step e, the flow rate of O 2 is controlled to be 30-40 sccm, the Source Power is controlled to be 40W~50W,Bias Power W, the pressure is controlled to be 5-7 mTorr, and the ashing time is controlled to be 30-32 s; after ashing is completed, the photoresist in the exposed area is completely removed, and the photoresist in the unexposed area is left for 1.4-1.6 um, so that patterning is completed.
8. A method of patterning a poorly tolerated film layer as set forth in claim 7, characterized in that: after ashing of the fourth substrate (4), dry etching is performed on the film packaging layer, an ICP etching mode is adopted, etching gas adopts BCl 3、Cl2、Ar 、CF4、O2, the flow rate of gas BCl 3 is 40 sccm-50 sccm, the flow rate of gas Cl 2 is 10 sccm-15 sccm, the flow rate of gas Ar is 15 sccm-20 sccm, the flow rate of gas CF 4 is 30 sccm-40 sccm, the flow rate of gas O 2 is 5 sccm-7 sccm, the pressure during etching is controlled to be 5 mTorr-8mTorr,Source Power, the pressure during etching is controlled to be 350W~380W,Bias power, the pressure during etching is controlled to be 130W-150W, and the etching time is 190 s+/-5 s.
9. A method for patterning a poorly tolerated film layer as claimed in claim 8, characterized in that: the specific operation of the step f is as follows: carrying out wet photoresist stripping on the ashed and etched fifth substrate (5), and adopting NMP to remove glue solution in a soaking and flushing mode; and (3) removing the photoresist from the fifth substrate (5) to obtain a sixth substrate (6), namely finishing the thin film packaging layer process.
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| CN113376960A (en) * | 2020-05-22 | 2021-09-10 | 台湾积体电路制造股份有限公司 | Method of manufacturing semiconductor device and pattern forming method |
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| US20220005687A1 (en) * | 2020-07-02 | 2022-01-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing a semiconductor device and pattern formation method |
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| CN113227909A (en) * | 2018-12-20 | 2021-08-06 | 朗姆研究公司 | Dry development of resists |
| CN113376960A (en) * | 2020-05-22 | 2021-09-10 | 台湾积体电路制造股份有限公司 | Method of manufacturing semiconductor device and pattern forming method |
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