CN114622173A - 一种偏钒酸盐荧光纳米薄膜 - Google Patents
一种偏钒酸盐荧光纳米薄膜 Download PDFInfo
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Abstract
本发明涉及一种偏钒酸盐纳米荧光薄膜，是指采用磁控溅射、脉冲激光沉积等物理沉积的方法制备的具有AVO3(A＝K,Rb,Cs)化学通式的纳米薄膜厚度10～300nm。所述薄膜具有明显的白光荧光特性，可在近紫外光照射激发下，产生400‑800nm可见光波段的全光谱发光，发光颜色十分接近白色。本发明所述薄膜为白光荧光膜，量子效率高，发光带宽，白光组分稳定，适用于白光二极管等发光元器件。
Description
技术领域
本发明属于新型光功能材料领域，具体涉及一种可用作白光LED的荧光薄膜的制备方法。
背景技术
发光二极管LED的研发领域中，实现稳定可控、高显色指数的的白光发光一直是研究者们在不断攻克的课题。一般而言，实现白光LED有两种方式：一种是利用光的混色原理将多种单色LED发光或多种荧光体的发光按一定比例混合而成的合成白色光，另一种仅利用一种荧光体就可在较宽波长范围内发出的纯净白色光。用于照明时，前者由于物体对不同光的选择性吸收反射等影响实际物体色彩的显色性，从而使物体呈现出与肉眼在自然光条件下观察时不同的颜色效果，而后者则可在任何条件下反映出与肉眼和自然光条件下一致的颜色，具有最真实的显色效果，特别适用于艺术展览以及医疗等要求高显色性的领域，是LED产业的重要发展方向。
研究发现，在众多荧光材料中，能够被近紫外光源激发的偏钒酸盐AVO3(A＝K,Rb,Cs)荧光材料由于可以实现单一基质的宽带白光输出，并且具有发光效率高，制备温度低的特点而独具优势。目前，关于偏钒酸盐荧光材料的研究，基本都集中在粉体、陶瓷的理化性能探究和制备工艺探索上，对于荧光材料最常用的应用形式——薄膜，则多为通过涂膜、共混等方式分散于聚合物体系中而获得，目前尚无直接成膜的工艺，尤其是物理沉积工艺。
例如中国专利《一种偏钒酸盐纳米晶/聚合物复合荧光膜的制备方法》(CN102276158B)；中国专利《一种偏钒酸盐粉体》(CN105110370B)；中国专利《一种多形貌偏钒酸盐粉体及其制备方法》(CN105110371B)等等。相对于这些首先制备粉体，再与塑料等共混成膜的方法，物理沉积的工艺膜层纳米化程度高，薄膜可控，而且
发明内容
本发明利用物理沉积工艺直接在衬底上制备偏钒酸盐荧光纳米薄膜，填补偏钒酸盐物理镀膜领域的空白。
本发明一种偏钒酸盐荧光纳米薄膜，其特征在于，所述薄膜生长于衬底上，化学组成为单组分偏钒酸盐AVO3(A＝Cs,Rb,K)或一种以上偏钒酸盐混合物或以偏钒酸盐为主的混合物，其中AVO3组分所占的质量分数大于80％。薄膜厚度10～300nm。
本发明所述薄膜具备明显的荧光特性，在300～380nm的近紫外光激发下，可在380～780nm的整个可见光波段产生荧光发光，荧光颜色为白色或黄绿色，显色指数>50，荧光量子效率30％～90％。
所述的一种偏钒酸盐荧光纳米薄膜的制备方法，采用物理沉积镀膜工艺，具体包括磁控溅射法、脉冲激光沉积法、原子层沉积法中的一种。
物理沉积工艺中，靶材使用具有AVO3(A＝Cs,Rb,K)化学组成的单组分陶瓷靶材，或以AVO3(A＝Cs,Rb,K)为主要成分的混合物陶瓷靶材。使用衬底为透明衬底或不透明衬底，具体包括玻璃、蓝宝石、单晶硅、单晶锗、二氧化钛、陶瓷、塑料、金属单质衬底中的一种。
本发明所述偏钒酸盐荧光薄膜的用途，包括作为白光LED的器件的发光体或其他用途。
本发明的制备方法一步成膜，具有省时、节能、简便易行、收率高，适合大规模生产的特点。单组份偏钒酸盐白光荧光薄膜，无组分配比问题，白光稳定，适用于新型白光LED的研发中，有望解决低显色性，多体系材料的不匹配性及器件结构的简单化问题。
附图说明
图1实施例1所述偏钒酸铯(CsVO3)薄膜实物照片(左)及紫外灯照射下产品发光照片(右)
图2实施例1所述偏钒酸铯(CsVO3)荧光粉的激发光谱与发射光谱
具体实施方式
实施例1
使用2英寸单组分偏钒酸铯陶瓷靶材，利用射频磁控溅射工艺制备荧光薄膜，电源功率80W，溅射气体为氩气，沉积温度为室温，衬底选用玻璃衬底。沉积时间60min。最终获得的厚度约为100nm的多晶荧光纳米薄膜。
样品薄膜的发光照片如图1所示，薄膜的发光光谱如图2所示。薄膜在364nm附近的近紫外光辐照下，产生400-800nm的可见光全谱荧光。经计算，荧光色坐标(0.337,0.447)呈现黄绿色白光，显色指数69.5。
实施例2
使用2英寸的含10％掺铝氧化锌(AZO)的偏钒酸铷陶瓷靶材，利用直流磁控溅射工艺制备荧光薄膜，电源功率60W，溅射气体为氩气，沉积温度100℃，衬底选用蓝宝石衬底。沉积时间30min。最终获得的厚度约为80nm的多晶荧光纳米薄膜。
实施例1
使用2英寸单组分偏钒酸钾陶瓷靶材，利用射频磁控溅射工艺制备荧光薄膜，电源功率100W，溅射气体为氩气，沉积温度100℃，衬底选用聚酰亚胺薄膜薄片。沉积时间90min。最终获得的厚度约为200nm的多晶荧光纳米薄膜。
以上对本发明进行了详细的介绍，文中应用了具体的实例对本发明进行阐述，这是为了便于该技术领域的普通技术人员能理解和应用本发明。熟悉本领域的人员可以容易地对这些实施例做出各种修改，并把在本发明的思想应用到其他实施例中而不必经过创造性的劳动。因此，本发明不限于这里的实施例，本领域技术人员根据本发明的揭示，对于本发明做出的改进和修改都应该在本发明的保护范围之内。
Claims (6)
1.一种偏钒酸盐荧光纳米薄膜，其特征在于，所述薄膜采用物理沉积工艺生长于衬底上，化学组成为单组分偏钒酸盐AVO3(A＝Cs,Rb,K)或一种以上偏钒酸盐混合物或以偏钒酸盐为主的混合物，其中AVO3组分所占的质量分数大于80％。薄膜厚度10～300nm。
2.如权利要求1所述的一种偏钒酸盐荧光纳米薄膜，其特征在于，所述薄膜具备明显的荧光特性，在300～380nm的近紫外光激发下，可在380～780nm的整个可见光波段产生荧光发光，荧光颜色为白色或黄绿色，显色指数>50，荧光量子效率30％～90％。
3.如权利要求1所述的一种偏钒酸盐荧光纳米薄膜，其特征在于，所述衬底为透明衬底或不透明衬底，具体包括玻璃、蓝宝石、单晶硅、单晶锗、二氧化钛、陶瓷、塑料、金属单质衬底中的一种。
4.如权利要求1所述的一种偏钒酸盐荧光纳米薄膜的制备方法，所述物理沉积镀膜工艺具体包括磁控溅射法、脉冲激光沉积法、原子层沉积法中的一种。
5.如权利要求4所述的一种偏钒酸盐荧光纳米薄膜的制备方法，所述物理沉积镀膜工艺汇总，使用的靶材为具有AVO3(A＝Cs,Rb,K)化学组成的单组分陶瓷靶材，或以AVO3(A＝Cs,Rb,K)为主要成分的混合物陶瓷靶材。
6.如权利要求1-4中任意一项所述偏钒酸盐荧光薄膜的用途，包括作为白光LED的器件的发光体。
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08254718A (ja) * | 1995-03-15 | 1996-10-01 | Matsushita Electric Ind Co Ltd | 表示素子およびその製造方法 |
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