CN114613724B - 导电结构及其制造方法 - Google Patents
导电结构及其制造方法 Download PDFInfo
- Publication number
- CN114613724B CN114613724B CN202210202880.5A CN202210202880A CN114613724B CN 114613724 B CN114613724 B CN 114613724B CN 202210202880 A CN202210202880 A CN 202210202880A CN 114613724 B CN114613724 B CN 114613724B
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- substrate
- conductive material
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- thickening layer
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 105
- 238000000034 method Methods 0.000 claims abstract description 92
- 230000008719 thickening Effects 0.000 claims abstract description 61
- 239000004020 conductor Substances 0.000 claims abstract description 57
- 238000009713 electroplating Methods 0.000 claims abstract description 26
- 238000004140 cleaning Methods 0.000 claims abstract description 11
- 238000005553 drilling Methods 0.000 claims abstract description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 85
- 229910052799 carbon Inorganic materials 0.000 claims description 85
- 238000007650 screen-printing Methods 0.000 claims description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 238000007747 plating Methods 0.000 claims description 8
- 238000007639 printing Methods 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 239000007921 spray Substances 0.000 claims description 4
- 238000007772 electroless plating Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 239000002184 metal Substances 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 20
- 239000000126 substance Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 2
- 239000002033 PVDF binder Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
Claims (7)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210202880.5A CN114613724B (zh) | 2022-03-02 | 2022-03-02 | 导电结构及其制造方法 |
TW111108558A TWI804231B (zh) | 2022-03-02 | 2022-03-09 | 導電結構及其製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210202880.5A CN114613724B (zh) | 2022-03-02 | 2022-03-02 | 导电结构及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN114613724A CN114613724A (zh) | 2022-06-10 |
CN114613724B true CN114613724B (zh) | 2023-06-02 |
Family
ID=81861155
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202210202880.5A Active CN114613724B (zh) | 2022-03-02 | 2022-03-02 | 导电结构及其制造方法 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN114613724B (zh) |
TW (1) | TWI804231B (zh) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103429003A (zh) * | 2012-05-25 | 2013-12-04 | 大毅科技股份有限公司 | 陶瓷金属化散热板的制造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100867038B1 (ko) * | 2005-03-02 | 2008-11-04 | 삼성전기주식회사 | 커패시터 내장형 인쇄회로기판 및 그 제조방법 |
DE102006049562A1 (de) * | 2006-10-20 | 2008-04-24 | Qimonda Ag | Substrat mit Durchführung und Verfahren zur Herstellung desselben |
JP5236379B2 (ja) * | 2007-08-24 | 2013-07-17 | 日本特殊陶業株式会社 | Ic検査装置用基板及びその製造方法 |
JP5311104B2 (ja) * | 2008-06-27 | 2013-10-09 | Jsr株式会社 | 絶縁性被膜を有する構造体及びその製造方法、樹脂組成物並びに電子部品 |
US20130313687A1 (en) * | 2012-01-13 | 2013-11-28 | Zycube Co., Ltd. | Through via/the buried via elrctrolde material and the said via structure and the said via manufacturing method |
JP6539992B2 (ja) * | 2014-11-14 | 2019-07-10 | 凸版印刷株式会社 | 配線回路基板、半導体装置、配線回路基板の製造方法、半導体装置の製造方法 |
CN106304662B (zh) * | 2015-05-27 | 2019-06-11 | 鹏鼎控股(深圳)股份有限公司 | 电路板及其制作方法 |
KR101629285B1 (ko) * | 2015-07-08 | 2016-06-22 | 두두테크 주식회사 | 자동차용 브레이크 페달 코일 인쇄 회로 기판의 제조 방법 |
JP7172211B2 (ja) * | 2017-07-28 | 2022-11-16 | Tdk株式会社 | 導電性基板、電子装置及び表示装置 |
-
2022
- 2022-03-02 CN CN202210202880.5A patent/CN114613724B/zh active Active
- 2022-03-09 TW TW111108558A patent/TWI804231B/zh active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103429003A (zh) * | 2012-05-25 | 2013-12-04 | 大毅科技股份有限公司 | 陶瓷金属化散热板的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI804231B (zh) | 2023-06-01 |
CN114613724A (zh) | 2022-06-10 |
TW202337279A (zh) | 2023-09-16 |
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Effective date of registration: 20240112 Address after: 518109, Building E4, 101, Foxconn Industrial Park, No. 2 East Ring 2nd Road, Fukang Community, Longhua Street, Longhua District, Shenzhen City, Guangdong Province (formerly Building 1, 1st Floor, G2 District), H3, H1, and H7 factories in K2 District, North Shenchao Optoelectronic Technology Park, Minqing Road, Guangdong Province Patentee after: INTERFACE OPTOELECTRONICS (SHENZHEN) Co.,Ltd. Patentee after: Interface Technology (Chengdu) Co., Ltd. Patentee after: GENERAL INTERFACE SOLUTION Ltd. Address before: No.689 Hezuo Road, West District, high tech Zone, Chengdu City, Sichuan Province Patentee before: Interface Technology (Chengdu) Co., Ltd. Patentee before: INTERFACE OPTOELECTRONICS (SHENZHEN) Co.,Ltd. Patentee before: Yicheng Photoelectric (Wuxi) Co.,Ltd. Patentee before: GENERAL INTERFACE SOLUTION Ltd. |